JP2011511464A - 薄膜光起電力デバイスおよび関連製造方法 - Google Patents
薄膜光起電力デバイスおよび関連製造方法 Download PDFInfo
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- JP2011511464A JP2011511464A JP2010545268A JP2010545268A JP2011511464A JP 2011511464 A JP2011511464 A JP 2011511464A JP 2010545268 A JP2010545268 A JP 2010545268A JP 2010545268 A JP2010545268 A JP 2010545268A JP 2011511464 A JP2011511464 A JP 2011511464A
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Abstract
Description
本出願は、2008年2月3日に出願された米国仮出願シリアル番号第61/025,786号の恩恵を主張する。本明細書中、同文献の開示内容全体を参考のため援用する。
本発明は、主に光起電力デバイスに関する。より詳細には、本発明は、構造化基板を用いて形成された薄膜光起電力デバイスに関する。
光起電力デバイス(太陽電池としても知られる)は、太陽放射エネルギーからのエネルギーを電気へと変換するように動作し、この電気は外部負荷へと送達されて、有用な作業に用いられる。既存の光起電力デバイスの動作中、入射太陽放射エネルギーは前記光起電力デバイスを貫通し、前記光起電力デバイス内の一組の光活性材料によって吸収される。太陽放射エネルギーが吸収されることにより、電荷キャリアが電子正孔対つまり励起子の形態で発生する。前記光活性材料間の界面における駆動力(例えば、pn接合におけるドーピング差に起因するもの)に起因して、電子が一電極を通じて前記光起電力デバイスから出て行く一方、ホールは別の電極を通じて前記光起電力デバイスから出て行く。その正味の効果とは、入射太陽放射エネルギーによって駆動された光起電力デバイスを通じて電流が流れることである。
特定の実施形態は、光起電力デバイスに関する。一実施形態において、前記光起電力デバイスは、(1)構造特徴部(functional structure)のアレイを含む構造化基板と、(2)前記構造化基板に隣接して配置され、かつ、前記構造特徴部のアレイに実質的に適合するような形状である、第1の電極層と、(3)前記第1の電極層に隣接して配置され、かつ、前記第1の電極層に実質的に適合するような形状である、活性層であって、一組の光活性材料を含む、活性層と、(4)前記活性層に隣接して配置され、かつ、前記第1の電極層および第2の電極層がインターロッキング構成を有するような形状である、第2の電極層とを含む。
概要
本発明の特定の実施形態は、構造化基板を用いて形成された薄膜光起電力デバイスに関する。構造化基板を用いることにより、製造容易性を維持しつつ、太陽光の変換効率を向上させることが可能になる。いくつかの実施形態において、薄膜光起電力デバイス層は、構造特徴部のアレイを含む構造化基板の上に形成される。得られた光起電力接合は、蒸着体積内において分散するかまたは「折り畳まれ」、これにより折り畳み接合が形成されて、電荷分離が発生する。前記構造特徴部による散乱に起因する光吸収向上と、有効光学厚さまたは表面積を増加させるような前記構造特徴部の縦方向寸法の増加とにより、効率向上を達成することができる。折り畳みジオメトリおよび電極に対する近接性に基づいて前記折り畳み接合からの電荷収集効率を向上させることにより、さらなる効率向上を達成することができる。さらに、前記構造化基板により、一組の光活性材料からなる、より薄い活性層を用いることが可能となり、電荷収集効率が向上し、材料品質に対する制約が緩和される。このようにして、前記構造化基板を用いることにより、太陽光の変換効率の増加を達成しつつ、コスト削減が可能となる。
以下の定義は、本発明のいくつかの実施形態に関して記載される要素のうちのいくつかに適用される。これらの定義は、本明細書中同様に拡大され得る。
図1は、本発明の一実施形態に従って実装された折り畳み接合型薄膜光起電力デバイス100を示す。光起電力デバイス100は、構造化基板102を含む。構造化基板102は、ベース基板104と、ベース基板104から延びる構造特徴部106のアレイとを含む。図示の実施形態において、構造特徴部106のアレイは、ベース基板104の上面から上方に延びる細長構造のアレイに対応する。構造特徴部106のアレイの位置決めおよび方向付けは、図1中に示すものと異なってよく、構造特徴部106のアレイは、均一または不均一な様態で分布させることができる点が認識されるべきである。
図10は、本発明の一実施形態による折り畳み接合型薄膜光起電力デバイスを形成するための製造方法を示す。比較目的のため、従来の製造方法も図示している。先ず、工程1000において、構造特徴部のアレイを含むように、構造化基板を形成する。工程1002において、構造特徴部を被覆し、かつ、前記構造特徴部のアレイに実質的に適合する第1の電極層を形成するように、導電性材料(例えば、金属)を塗布する。工程1004において、前記第1の電極層を被覆し、かつ、前記第1の電極層に実質的に適合する第1の光活性層を形成するように、光活性材料を塗布する。工程1006において、前記第1の光活性層を被覆し、かつ、前記第1の光活性層に実質的に適合する第2の光活性層を形成するように、同一の光活性材料または異なる光活性材料を付加する。図10中には光活性層を2つ図示しているが、他の実装においてより多数またはより少数の光活性層を設けてもよいことが企図される。また、他の実装において、より多数またはより少数の電極層を設けてもよいことが企図される。次に、工程1008において、前記第2の光活性層を被覆し、かつ、前記第2の光活性層に実質的に適合する第2の電極層を形成するように、導電性材料(例えば、透明導電性酸化物)を塗布する。
上述した本発明の実施形態はひとえに例示目的のために示したものであり、他の多様な実施形態も本発明によって包含される点が認識されるべきである。
ZnO成長法を介した構造化基板の形成
金属亜鉛箔(30mmx10mmx0.25mm)をガラス容器の底部に実質的に水平に配置し、ITOコーティングガラス基板(30mmx10mm)を実質的に垂直にかつ前記亜鉛箔の上で若干傾けて配置する。水、ホルムアミド(2.2モル)および硝酸亜鉛(0.001モル)を含む成長溶液約20mlを前記容器中に注入する。前記容器をキャップし、約89℃の炉内に配置する。約10時間後、得られた構造化基板を前記成長溶液から取り出す。前記構造化基板を脱イオン水およびメタノールで連続的に洗い流し、その後デシケーター内で乾燥させる。
ZnO成長法を介した構造化基板の形成
金属亜鉛箔(30mmx10mmx0.25mm)をガラス容器の底部に実質的に水平に配置し、ITOコーティングガラス基板(30mmx10mm)を実質的に垂直にかつ前記亜鉛箔の上で若干傾けて配置する。水、ホルムアミド(1.0モル)および硝酸亜鉛(0.0005モル)を含む成長溶液約20mlを前記容器中に注入する。前記容器をキャップし、約70℃の炉内に配置する。約10時間後、得られた構造化基板を前記成長溶液から取り出す。前記構造化基板を脱イオン水およびメタノールで連続的に洗い流し、その後デシケーター内で乾燥させる。
ZnO成長法を介した構造化基板の形成
金属亜鉛粉末(0.4g、325メッシュ)をガラス容器の底部に実質的に水平に配置し、ITOコーティングガラス基板(30mmx15mm)を実質的に垂直にかつ前記亜鉛箔の上で若干傾けて配置する。水およびホルムアミド(1.0モル)を含む成長溶液約20mlを前記容器中に注入する。前記容器をキャップし、約70℃の炉内に配置する。約20時間後、得られた構造化基板を前記成長溶液から取り出す。前記構造化基板を脱イオン水およびメタノールで連続的に洗い流し、その後デシケーター内で乾燥させる。
ZnO成長法を介した構造化基板の形成
金属亜鉛粉末(0.4g、325メッシュ)をガラス容器の底部に実質的に水平に配置し、ITOコーティングガラス基板(30mmx15mm)を実質的に垂直ににかつ前記亜鉛粉末の上で若干傾けて配置する。水および尿素(2.0モル)を含む成長溶液約20mlを前記容器中に注入する。前記容器をキャップし、約90℃の炉内に配置する。約16時間後、得られた構造化基板を前記成長溶液から取り出す。前記構造化基板を脱イオン水およびメタノールで連続的に洗い流し、その後デシケーター内で乾燥させる。
ZnO成長法を介した構造化基板の形成
金属亜鉛箔(30mmx10mmx0.25mm)およびITOコーティングガラス基板(30mmx10mm)をガラス容器内に配置し、前記亜鉛箔を前記基板に寄りかからせる。水、ホルムアミド(2.2モル)および硝酸亜鉛(0.002モル)を含む成長溶液約20mlを前記容器中に注入する。前記容器をキャップし、約80℃の炉内に配置する。約22時間後、得られた構造化基板を前記成長溶液から取り出す。前記構造化基板を脱イオン水およびメタノールで連続的に洗い流し、その後デシケーター内で乾燥させる。
ZnO成長法を介した構造化基板の形成
金属亜鉛粉末(0.4g、325メッシュ)をガラス容器の底部に配置し、ITOコーティングガラス基板(30mmx15mm)を実質的に垂直にかつ前記亜鉛粉末の上で若干傾けて配置する。水およびヘキサメチレンテトラミン(0.5モル)を含む成長溶液約20mlを前記容器中に注入する。前記容器をキャップし、約90℃の炉内に配置する。約16時間後、得られた構造化基板を前記成長溶液から取り出す。前記構造化基板を脱イオン水およびメタノールで連続的に洗い流し、その後デシケーター内で乾燥させる。
ZnO成長法を介した構造化基板の形成
金属亜鉛箔(30mmx10mmx0.25mm)およびITOコーティングガラス基板(30mmx10mm)をガラス容器内に配置し、前記亜鉛箔を前記基板に寄りかからせる。水および水酸化ナトリウム(2.0モル)を含む成長溶液約20mlを前記容器中に注入する。前記容器をキャップし、約80℃の炉内に配置する。約12時間後、得られた構造化基板を前記成長溶液から取り出す。前記構造化基板を脱イオン水およびメタノールで連続的に洗い流し、その後デシケーター内で乾燥させる。
コーティングされた構造化基板の特性評価
構造化基板を前記ZnO成長法を介して形成し、前記構造化基板のZnO層上にコーティングを塗布した。図15は、前記コーティングされた構造化基板の走査型電子顕微鏡画像を示す。前記画像から、ZnOナノロッドのアレイが形成されており、また、前記コーティングから、前記ZnOナノロッドの実質的に等角被覆が得られていることが分かる。
アモルファスシリコンコーティングされた構造化基板の特性評価
アモルファスシリコンのコーティングを構造化基板上に塗布して、厚さが約200nmであるアモルファスシリコン層を形成した。前記構造化基板は、平均断面直径が約300nmであり、平均長さが約3μmであり、平均スペーシングが約3μmであるZnOナノロッドのアレイを含んでいた。比較目的のため、同様のアモルファスシリコン層を実質的に平坦な基板上に形成した。前記コーティングされた構造化基板および前記コーティングされた平坦基板に対して光学的測定を行って、透過特性、反射特性および吸収特性を判定した。
Claims (29)
- 構造特徴部(functional structure)のアレイを含む構造化基板と、
前記構造化基板に隣接して配置され、かつ、前記構造特徴部のアレイに実質的に適合するような形状である、第1の電極層と、
前記第1の電極層に隣接して配置され、かつ、前記第1の電極層に実質的に適合するような形状である、活性層であって、一組の光活性材料を含む、活性層と、
前記活性層に隣接して配置され、かつ、前記第1の電極層および第2の電極層がインターロッキング構成を有するような形状である、第2の電極層と、
を含む、光起電力デバイス。 - 前記構造特徴部のアレイのうちの少なくとも1つの横方向寸法が、100nm〜1μmの範囲である、請求項1に記載の光起電力デバイス。
- 前記構造特徴部のアレイのうちの少なくとも1つの縦方向寸法が、1μm〜10μmの範囲である、請求項1に記載の光起電力デバイス。
- 前記構造特徴部のアレイのうちの少なくとも1つのアスペクト比が、5〜100の範囲である、請求項1に記載の光起電力デバイス。
- 前記構造特徴部のアレイのうち最近接の構造特徴部のスペーシングが、500nm〜10μmの範囲である、請求項1に記載の光起電力デバイス。
- 前記構造化基板がベース基板を含み、前記構造特徴部のアレイが、前記ベース基板から延びるナノロッドのアレイに対応する、請求項1に記載の光起電力デバイス。
- 前記ナノロッドのアレイが、金属酸化物および金属カルコゲニドのうちの少なくとも1つを含む、請求項6に記載の光起電力デバイス。
- 前記第1の電極層が、前記ナノロッドのアレイに従った形状である突起部のアレイを含み、前記第2の電極層が、前記突起部のアレイを補完する凹部のアレイを含む、請求項6に記載の光起電力デバイス。
- 前記構造特徴部のアレイが細孔のアレイに対応する、請求項1に記載の光起電力デバイス。
- 前記第1の電極層が、前記細孔のアレイに従った形状である凹部のアレイを含み、前記第2の電極層が、前記凹部のアレイを補完する突起部のアレイを含む、請求項9に記載の光起電力デバイス。
- 前記第1の電極層および前記第2の電極層のうちの少なくとも1つが、前記可視範囲において実質的に透明である、請求項1に記載の光起電力デバイス。
- 構造化基板と、
前記構造化基板に隣接して配置された第1の電極層であって、前記構造化基板に合わせた形状である一組の突起部を含む、第1の電極層と、
前記第1の電極層から間隔を空けて配置された第2の電極層であって、前記第1の電極層の前記一組の突起部を補完する一組の凹部を含む、第2の電極層と、
前記第1の電極層と前記第2の電極層との間に配置された一組の光活性層と、
を含む、光起電力デバイス。 - 前記構造化基板が、ベース基板と、前記ベース基板から延びる一組のナノロッドとを含み、前記第1の電極層の前記一組の突起部が、前記一組のナノロッドに合わせた形状である、請求項12に記載の光起電力デバイス。
- 前記第1の電極層の前記一組の突起部のそれぞれが、前記第2の電極層の前記一組の凹部のそれぞれ1つの内部に延びる、請求項12に記載の光起電力デバイス。
- 前記一組の光活性層のうちの隣接する光活性層間の界面が折り畳み接合に対応し、前記折り畳み接合が、前記第1の電極層と前記第2の電極層との間の空間に合わせた形状である、請求項12に記載の光起電力デバイス。
- 前記一組の光活性層のうちの少なくとも1つが、アモルファスシリコンを含み、かつ50nm〜250nmの範囲の厚さを有する、請求項12に記載の光起電力デバイス。
- 構造化基板と、
前記構造化基板に隣接して配置された第1の電極層であって、前記構造化基板に合わせた形状である一組の凹部を含む、第1の電極層と、
前記第1の電極層から間隔を空けて配置された第2の電極層であって、前記第1の電極層の前記一組の凹部を補完する一組の突起部を含む、第2の電極層と、
前記第1の電極層と前記第2の電極層との間に配置された一組の光活性層と、
を含む、光起電力デバイス。 - 前記構造化基板が一組の細孔を含み、前記第1の電極層の前記一組の凹部が、前記一組の細孔に合わせた形状である、請求項17に記載の光起電力デバイス。
- 前記第2の電極層の前記一組の突起部のそれぞれが、前記第1の電極層の前記一組の凹部のそれぞれ1つの内部に延びる、請求項17に記載の光起電力デバイス。
- 前記第1の電極層と前記第2の電極層との間に配置された導電層をさらに含む、請求項17に記載の光起電力デバイス。
- 前記導電層が、導電性材料を含む一組のナノ粒子を含む、請求項20に記載の光起電力デバイス。
- 導電層を含む基板を提供するステップと、
(a)金属の第1供給源と、
(b)前記金属の第2供給源および錯化剤を含む成長溶液と、
に前記基板を曝露することにより、前記基板の前記導電層に隣接するナノ構造のアレイを形成するステップと
を含み、
前記ナノ構造物のアレイが金属酸化物を含む、
構造化基板を形成する方法。 - 前記金属が亜鉛であり、前記金属酸化物が酸化亜鉛である、請求項22に記載の方法。
- 前記金属の第1供給源が、亜鉛箔、亜鉛ワイヤ、亜鉛メッシュ、亜鉛顆粒、粒状亜鉛、亜鉛ピース、亜鉛チップおよび亜鉛粉末のうちの少なくとも1つを含む、請求項23に記載の方法。
- 前記金属の第2供給源が亜鉛塩を含む、請求項23に記載の方法。
- 前記基板を前記金属の第1供給源に曝露するステップが、前記基板の前記導電層を前記金属の第1供給源と接触させるステップを含む、請求項22に記載の方法。
- 前記金属の第1供給源と接触している前記導電層内の領域を画定するステップをさらに含み、前記ナノ構造物のアレイを形成するステップが、前記画定された領域に隣接する前記ナノ構造のアレイを選択的に形成するステップを含む、請求項26に記載の方法。
- 前記基板を前記成長溶液に曝露するステップが、
前記基板を前記成長溶液中に浸漬するステップと、
前記成長溶液を20℃〜100℃の範囲の温度で維持するステップと
を含む、請求項22に記載の方法。 - 前記錯化剤が、アミド、尿素、カルバメート、ビウレット、イミド、アンモニア、第1級アミン、第2級アミン、第3級アミン、ジアミン、ポリアミン、ヒドラジン、ヘテロ環、アルコール、水酸化物イオン供給源、および無機塩のうちの少なくとも1つを含む、請求項22に記載の方法。
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Also Published As
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US20090194160A1 (en) | 2009-08-06 |
WO2009097627A3 (en) | 2009-11-05 |
EP2245673A2 (en) | 2010-11-03 |
WO2009097627A2 (en) | 2009-08-06 |
CN101990713A (zh) | 2011-03-23 |
EP2245673A4 (en) | 2016-09-21 |
CN101990713B (zh) | 2012-12-05 |
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