JP2011507198A - オプトエレクトロニクス部品およびその製造方法 - Google Patents
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Abstract
【選択図】図1A
Description
− キャリア要素を形成するステップと、
− 電磁放射を発生させる少なくとも1つの光学活性領域をそれぞれが有する少なくとも2つの要素を、キャリア要素の第1の側に、隣り合うように配置するステップと、
− 第1の側とは反対側に位置している、少なくとも2つの隣接する要素の面に、電気絶縁性の保護層を形成するステップであって、保護層が、少なくとも2つの隣接する要素の間に配置されている少なくとも1つの第1の領域において、光学活性領域によって発生させることのできる電磁放射が透過することを、少なくともほぼ防止する、ステップ。
− キャリア要素2は、半導体積層体を上にエピタキシャル成長させた成長基板ではなく、半導体積層体に後から固定された個別のキャリア要素2である。
− 半導体積層体の厚さは、20μm以下の範囲、特に10μm以下の範囲である。
− 半導体積層体が成長基板を備えていない。この場合、「成長基板を備えていない」とは、成長を目的として使用された(該当時)成長基板が、半導体積層体から除去されている、または少なくとも大幅に薄くされていることを意味する。具体的には、成長基板は、単独では、またはエピタキシャル積層体のみとの組合せでは自身を支持できない程度まで薄くされている。特に、大幅に薄くされた成長基板の残りの残留部自体は、成長基板として機能するには適さない。
− 半導体積層体は、混合構造(intermixing structure)を有する少なくとも1つの領域を有する少なくとも1つの半導体層を含んでおり、この混合構造によって、理想的には半導体積層体における近似的に光のエルゴード分布につながり、すなわち、この混合構造は、実質的にエルゴード的確率過程である散乱挙動を示す。
Claims (15)
- オプトエレクトロニクス部品(1,12,14,17)であって、
キャリア要素(2)と、
前記キャリア要素(2)の第1の側に、隣接するように配置されており、電磁放射(10)を発生させるための少なくとも1つの光学活性領域(4)をそれぞれが有する少なくとも2つの要素(3)と、
前記第1の側とは反対側に位置している、前記少なくとも2つの隣接する要素(3)の面、の上に少なくとも一部分が配置されている電気絶縁性の保護層(5)と、
を備えており、
前記保護層(5)が、前記少なくとも2つの隣接する要素(3)の間に配置されている少なくとも第1の領域(5a)において、前記光学活性領域(4)によって発生させることのできる前記電磁放射(10)が透過することを、少なくともほぼ防止する、
オプトエレクトロニクス部品(1,12,14,17)。 - 前記電気絶縁性の保護層(5)が、前記第1の領域(5a)に中断部が形成されている、請求項1に記載のオプトエレクトロニクス部品(14,17)。
- 前記電気絶縁性の保護層(5)が前記第1の領域(5a)において前記電磁放射(10)を吸収する、請求項1に記載のオプトエレクトロニクス部品(1,12)。
- 前記少なくとも2つの隣接する要素(3)の間に凹部(11)が配置されている、請求項1から請求項3のいずれかに記載のオプトエレクトロニクス部品(1,12,14,17)。
- 前記凹部(11)が前記少なくとも2つの要素(3)の高さ全体にわたり延在している、請求項4に記載のオプトエレクトロニクス部品(1,14,17)。
- 前記第1の領域(5a)に反射要素(16,18a)が配置されており、前記反射要素が少なくとも部分的に前記凹部(11)の中に延在している、請求項5に記載のオプトエレクトロニクス部品(14,17)。
- 前記電気絶縁性の保護層(5)が少なくとも部分的に、前記キャリア要素(2)に向かう方向に前記凹部(11)の中に入り込んでいる、請求項4または請求項5に記載のオプトエレクトロニクス部品(1,12,14)。
- 前記少なくとも2つの光学活性領域(4)を電気的に接続する導電性接続層(6)が、前記保護層(5)の少なくとも1つの第2の領域(5b)の上に配置されている、請求項1から請求項7のいずれかに記載のオプトエレクトロニクス部品(1,12,14,17)。
- 前記保護層(5)が、前記第2の領域(5b)において、前記光学活性領域(4)によって発生する前記電磁放射(10)に対して少なくともほぼ不透明である、請求項8に記載のオプトエレクトロニクス部品(1,12)。
- 前記保護層(5)の少なくとも1つの第3の領域(5c)にフォトルミネセンス変換要素(13)が配置されており、前記変換要素が、第1の波長を有する電磁放射(10)を吸収し、第2の波長を有する電磁放射を放出する、請求項8または請求項9に記載のオプトエレクトロニクス部品(12)。
- 少なくとも1つの光学活性領域(4)をそれぞれが有する複数の要素(3)が、前記キャリア要素(2)の前記第1の側に配置されており、前記複数の要素(3)がマトリクス構造を形成している、請求項1から請求項10のいずれかに記載のオプトエレクトロニクス部品(1,12,14,17)。
- 前記保護層(5)の少なくとも一部分が、着色された箔、特に黒い箔として具体化されている、請求項1から請求項11のいずれかに記載のオプトエレクトロニクス部品(1)。
- オプトエレクトロニクス部品(1,12,14,17)の製造方法(30)であって、
− キャリア要素(2)を形成するステップと、
− 電磁放射(10)を発生させる少なくとも1つの光学活性領域(4)をそれぞれが有する少なくとも2つの要素(3)を、前記キャリア要素(2)の第1の側に、隣り合うように配置するステップと、
− 前記第1の側とは反対側に位置している、前記少なくとも2つの隣接する要素(3)の面、の上に電気絶縁性の保護層(5)を形成するステップであって、前記保護層が、前記少なくとも2つの隣接する要素(3)の間に配置されている少なくとも1つの第1の領域(5a)において、前記光学活性領域(4)によって発生させることのできる前記電磁放射(10)が透過することを、少なくともほぼ防止する、前記ステップと、
を含んでいる、製造方法(30)。 - − 前記保護層(5)に少なくとも1つのカットアウト(9)を形成するステップと、
− 前記保護層(5)の上に導電性接続層(6)を形成するステップと、
− 前記少なくとも1つのカットアウト(9)の領域において、前記接続層(6)と前記少なくとも2つの隣接する要素(3)との間の第2の電気的接触を形成するステップと、
をさらに含んでいる、請求項13に記載の製造方法(30)。 - 前記少なくとも2つの隣接する要素(3)の間に凹部(11)を形成する、請求項13または請求項14に記載の製造方法(30)。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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DE102007062045 | 2007-12-21 | ||
DE102007062045.6 | 2007-12-21 | ||
DE102008019902A DE102008019902A1 (de) | 2007-12-21 | 2008-04-21 | Optoelektronisches Bauelement und Herstellungsverfahren für ein optoelektronisches Bauelement |
DE102008019902.8 | 2008-04-21 | ||
PCT/DE2008/002067 WO2009079985A2 (de) | 2007-12-21 | 2008-12-11 | Optoelektronisches bauelement und herstellungsverfahren für ein optoelektronisches bauelement |
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JP2011507198A true JP2011507198A (ja) | 2011-03-03 |
JP2011507198A5 JP2011507198A5 (ja) | 2012-01-19 |
JP5372009B2 JP5372009B2 (ja) | 2013-12-18 |
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US (1) | US8513682B2 (ja) |
EP (1) | EP2223337B1 (ja) |
JP (1) | JP5372009B2 (ja) |
KR (1) | KR101523408B1 (ja) |
CN (1) | CN101904005B (ja) |
DE (1) | DE102008019902A1 (ja) |
TW (1) | TW200937611A (ja) |
WO (1) | WO2009079985A2 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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DE102008025923B4 (de) * | 2008-05-30 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
DE102008045653B4 (de) * | 2008-09-03 | 2020-03-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
DE102009009483A1 (de) * | 2009-02-19 | 2010-08-26 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Beleuchtungseinrichtung und Beleuchtungseinrichtung |
DE102009042205A1 (de) * | 2009-09-18 | 2011-03-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul |
DE102009058796A1 (de) | 2009-12-18 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102010026344A1 (de) * | 2010-07-07 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
DE102010046790A1 (de) * | 2010-09-28 | 2012-03-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE102010055265A1 (de) * | 2010-12-20 | 2012-06-21 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
DE102012101160A1 (de) * | 2012-02-14 | 2013-08-14 | Osram Opto Semiconductors Gmbh | Lichtquellenmodul |
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AT14563U1 (de) * | 2014-03-31 | 2016-01-15 | At&S Austria Technologie & Systemtechnik Ag | Verfahren zur Herstellung einer Leiterplatte mit zumindest einer optoelektronischen Komponente |
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KR102213717B1 (ko) * | 2017-02-21 | 2021-02-09 | 루미리즈 홀딩 비.브이. | 다수의 vcsel들을 포함하는 광원들의 어레이 |
DE112018007215T5 (de) * | 2018-03-05 | 2020-11-19 | Osram Opto Semiconductors Gmbh | Lichtemittierende Vorrichtung und Verfahren zur Herstellung einer Vielzahl von lichtemittierenden Vorrichtungen |
JP6846017B2 (ja) * | 2018-06-08 | 2021-03-24 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
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- 2008-04-21 DE DE102008019902A patent/DE102008019902A1/de not_active Withdrawn
- 2008-12-11 WO PCT/DE2008/002067 patent/WO2009079985A2/de active Application Filing
- 2008-12-11 KR KR1020107016288A patent/KR101523408B1/ko active IP Right Grant
- 2008-12-11 US US12/808,953 patent/US8513682B2/en active Active
- 2008-12-11 CN CN2008801225414A patent/CN101904005B/zh not_active Expired - Fee Related
- 2008-12-11 JP JP2010538328A patent/JP5372009B2/ja not_active Expired - Fee Related
- 2008-12-11 EP EP08865108.8A patent/EP2223337B1/de not_active Not-in-force
- 2008-12-18 TW TW097149361A patent/TW200937611A/zh unknown
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Also Published As
Publication number | Publication date |
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WO2009079985A3 (de) | 2009-10-15 |
US8513682B2 (en) | 2013-08-20 |
KR101523408B1 (ko) | 2015-05-27 |
WO2009079985A2 (de) | 2009-07-02 |
CN101904005A (zh) | 2010-12-01 |
DE102008019902A1 (de) | 2009-06-25 |
EP2223337A2 (de) | 2010-09-01 |
CN101904005B (zh) | 2013-11-27 |
KR20100114042A (ko) | 2010-10-22 |
JP5372009B2 (ja) | 2013-12-18 |
TW200937611A (en) | 2009-09-01 |
US20100301355A1 (en) | 2010-12-02 |
EP2223337B1 (de) | 2018-08-29 |
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