JP2011505072A - チップアセンブリ、接続アセンブリ、led、およびチップアセンブリの製造方法 - Google Patents
チップアセンブリ、接続アセンブリ、led、およびチップアセンブリの製造方法 Download PDFInfo
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
【選択図】図1
Description
− 第1のリードフレームを形成し、第1のリードフレームを接続リードフレームとして具体化するステップと、
− 第2のリードフレームを形成し、第2のリードフレームを放熱リードフレームとして具体化するステップと、
− これらのリードフレームを射出成型法によって封止するステップと、
− 少なくとも一方のリードフレームの中に空洞を形成するステップと、
− 空洞の中に半導体チップを配置するステップと、
− 半導体チップをリードフレームに電気的に接続するステップと、
− 空洞の中で半導体チップをポッティングするステップと、
を含んでいる、方法、を提供する。
Claims (15)
- 電磁放射を放出する少なくとも1つの半導体チップ(1)を備えており、かつ接続アセンブリ(2)を備えている、オプトエレクトロニクス部品のチップアセンブリであって、
− 前記接続アセンブリ(2)が、互いに電気的に絶縁されている面(3,4)を有し、
− 少なくとも2つの電気的に絶縁されている導体(9,10)が、少なくとも2つの面(3,4)に配置されており、
− 少なくとも1つの面(3,4)が空洞(6)を有し、
− 前記半導体チップ(1)が、前記空洞(6)の中に配置されており、少なくとも2つの接続位置(7,8)を有し、
− 前記接続位置(7,8)のそれぞれが、それぞれの1つの前記導体(9,10)に導電接続されており、
− 少なくとも一方の前記面(4)が放熱面である、
チップアセンブリ。 - − 少なくとも1つの第2の半導体チップ(1)が前記空洞(6)の中に設けられており、
− 前記第2の半導体チップ(1)が、同様に少なくとも2つの接続位置(7,8)を有し、
− 電気的に絶縁されている少なくとも1つの第3の導体(16)が、前記2つの面(3,4)の一方に配置されており、
− 前記第2の半導体チップの前記接続位置(7,8)のそれぞれが、それぞれの1つの前記導体(16,10)に導電接続されている、
請求項1に記載のチップアセンブリ。 - − 少なくとも1つの第2の半導体チップ(1)が前記空洞(6)の中に設けられており、
− 前記第2の半導体チップ(1)が、同様に少なくとも2つの接続位置(7,8)を有し、
− 電気的に絶縁されている少なくとも2つのさらなる導体が、少なくとも2つの面(3,4)に配置されており、
− 前記第2の半導体チップの前記接続位置(7,8)のそれぞれが、それぞれの1つの前記さらなる導体に導電接続されている、
請求項1に記載のチップアセンブリ。 - 前記放熱面が分割されており、半導体チップ(1)のそれぞれにおいて個別に熱を最適に放散させ得るように、複数の部分が空間的に互いに隔てられている、請求項2または請求項3に記載のチップアセンブリ。
- 前記半導体チップ(1)を、前記チップアセンブリの中で、直列もしくは並列、またはその両方において相互接続することができる、請求項2または請求項3に記載のチップアセンブリ。
- 前記面(3,4)の少なくとも一方が電気的に絶縁された状態に構成されている、請求項3から請求項5のいずれかに記載のチップアセンブリ。
- 前記チップアセンブリが光学素子(14)を有する、請求項1から請求項6のいずれかに記載のチップアセンブリ。
- 前記接続アセンブリが第3の面(5)を有し、前記第3の面(5)が前記光学素子(14)の保持面として具体化されている、請求項1から請求項7のいずれかに記載のチップアセンブリ。
- 前記導体(9,10)が、プラグコンタクト、はんだ付けピン、圧接接続のうちの少なくとも1つの形における電気接続部(12)に導電接続されている、請求項1から請求項8のいずれかに記載のチップアセンブリ。
- 前記半導体チップ(1)が電気絶縁性の白金基板(17b)を有する、請求項1から請求項9のいずれかに記載のチップアセンブリ。
- 前記放熱面(4)が、ヒートシンクであり、導電性の冷却体に直接的に熱結合することができる、請求項1から請求項10のいずれかに記載のチップアセンブリ。
- オプトエレクトロニクス部品の接続アセンブリであって、
− 前記接続アセンブリが、互いに電気的に絶縁されている複数の面から構築されており、
− 電気的に絶縁されている少なくとも2つの導体が少なくとも2つの面に配置されており、
− 個々の前記面がプラスチックによって封止されており、
− 前記接続アセンブリの第1の面が接続面であり、
− 前記接続アセンブリの第2の面が放熱面である、
接続アセンブリ。 - ハウジングと、カバーと、電気接続部と、請求項12に記載の接続アセンブリと、を備えているLEDであって、
前記電気接続部が前記導体に導電接続されており、少なくとも1つの半導体チップが前記空洞の中に収容されている、
LED。 - チップアセンブリを製造する方法であって、
− 第1のリードフレームを形成し、前記第1のリードフレームを接続リードフレームとして具体化するステップと、
− 第2のリードフレームを形成し、前記第2のリードフレームを放熱リードフレームとして具体化するステップと、
− 前記リードフレームを射出成型法によって封止するステップと、
− 少なくとも一方のリードフレームの中に空洞を形成するステップと、
− 前記空洞の中に半導体チップを収容するステップと、
− 前記半導体チップを前記リードフレームに電気的に接続するステップと、
− 前記空洞の中で前記半導体チップをポッティングするステップと、
を含んでいる、方法。 - 前記熱伝導リードフレームが空間的に分割されており、これによって、半導体チップのそれぞれにおいて熱が最適に放散される、請求項14に記載の方法。
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DE102007057242 | 2007-11-28 | ||
DE102008021618A DE102008021618A1 (de) | 2007-11-28 | 2008-04-30 | Chipanordnung, Anschlussanordnung, LED sowie Verfahren zur Herstellung einer Chipanordnung |
PCT/DE2008/001931 WO2009067996A2 (de) | 2007-11-28 | 2008-11-21 | Chipanordnung, anschlussanordnung, led sowie verfahren zur herstellung einer chipanordnung |
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DE102012201616A1 (de) * | 2012-02-03 | 2013-08-08 | Tridonic Jennersdorf Gmbh | Kunststoffträger für LED-Chips zur Verwendung in LED-Modulen und LED-Ketten |
EP2642538A1 (en) | 2012-03-22 | 2013-09-25 | Koninklijke Philips N.V. | 3D LED structures |
KR101957884B1 (ko) * | 2012-05-14 | 2019-03-13 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 조명 장치 |
KR101886157B1 (ko) * | 2012-08-23 | 2018-08-08 | 엘지이노텍 주식회사 | 발광 소자 및 조명시스템 |
US9576935B2 (en) * | 2014-04-16 | 2017-02-21 | Infineon Technologies Ag | Method for fabricating a semiconductor package and semiconductor package |
US9865528B2 (en) * | 2015-12-11 | 2018-01-09 | Ubotic Company Limited | High power and high frequency plastic pre-molded cavity package |
KR20200112369A (ko) | 2019-03-22 | 2020-10-05 | 삼성전자주식회사 | 발광 소자 패키지 |
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- 2008-11-21 US US12/742,470 patent/US20100314635A1/en not_active Abandoned
- 2008-11-21 KR KR1020107014177A patent/KR20100105632A/ko not_active Application Discontinuation
- 2008-11-21 EP EP08854876.3A patent/EP2225785B1/de not_active Not-in-force
- 2008-11-21 WO PCT/DE2008/001931 patent/WO2009067996A2/de active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
EP2225785B1 (de) | 2017-03-15 |
WO2009067996A2 (de) | 2009-06-04 |
US20100314635A1 (en) | 2010-12-16 |
TWI484656B (zh) | 2015-05-11 |
WO2009067996A3 (de) | 2009-10-08 |
DE102008021618A1 (de) | 2009-06-04 |
CN101878544A (zh) | 2010-11-03 |
EP2225785A2 (de) | 2010-09-08 |
KR20100105632A (ko) | 2010-09-29 |
TW200929627A (en) | 2009-07-01 |
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