JP2011502354A - 電流によって誘起されるスピン運動量移動に基づいた、高速かつ低電力な磁気デバイス - Google Patents
電流によって誘起されるスピン運動量移動に基づいた、高速かつ低電力な磁気デバイス Download PDFInfo
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Abstract
【選択図】 図12
Description
(1)S. Yuasa et al, Applied Physics Letters 89, 042505 (2006)
(2)J-M. L. Beaujour, W. Chen, K. Krycka, C-C. Kao, J. Z. Sun and A. D. Kent, "Ferromagnetic resonance study of sputtered Co | Ni multilayers," The European Physical Journal B, DOI: 10.1140 (2007)
(3)J-M. L. Beaujour, A. D. Kent and J. Z. Sun, "Ferromagnetic resonance study of polycrystalline Fe_{1-x}V_x alloy thin films" arXiv:0710.2826 (October 2007)
Claims (19)
- 磁化方向が固定された磁化ベクトルを含むピン止め磁化層と、
磁化方向が可変である少なくとも1つの磁化ベクトルを含む自由磁化層と、
前記自由磁化層と前記ピン止め磁化層とを空間的に分離する第1の非磁性層と、
磁化方向が固定された磁化ベクトルを含む読出磁化層と、
前記自由磁化層と前記読出磁化層とを空間的に分離する第2の非磁性層と、
を含んで構成され、
前記第2の非磁性層は、絶縁体を含む磁気デバイス。 - 前記第2の非磁性層は、電子が量子力学的トンネル効果によって通過可能なように十分に薄い絶縁体を含む請求項1に記載の磁気デバイス。
- 前記第2の非磁性層は、MgO、AlO、SiO、マグネシウム原子と酸素原子との原子数比が1:1以外のマグネシウム酸化物、アルミニウム原子と酸素原子との原子数比が1:1以外のアルミニウム酸化物、及び、ケイ素原子と酸素原子との原子数比が1:1以外のケイ素酸化物、のうち少なくとも1つを含む絶縁体を含む請求項1に記載の磁気デバイス。
- 前記第2の非磁性層は、酸化マグネシウムMgOを含む絶縁体を含み、前記酸化マグネシウムMgOは、前記読出磁化層及び前記自由磁化層のうち少なくとも1つを含むエピタキシャル格子配列を有する請求項1に記載の磁気デバイス。
- 磁化方向が固定された磁化ベクトルを含むピン止め磁化層と、
磁化方向が可変である少なくとも1つの磁化ベクトルを含む自由磁化層と、
前記自由磁化層と前記ピン止め磁化層とを空間的に分離する第1の非磁性層と、
を含んで構成され、
前記第1の非磁性層は、絶縁体を含む磁気デバイス。 - 前記第1の非磁性層は、電子が量子力学的トンネル効果によって通過可能なように十分に薄い絶縁体を含む請求項5に記載の磁気デバイス。
- 前記第1の非磁性層は、MgO、AlO、SiO、マグネシウム原子と酸素原子との原子数比が1:1以外のマグネシウム酸化物、アルミニウム原子と酸素原子との原子数比が1:1以外のアルミニウム酸化物、及び、ケイ素原子と酸素原子との原子数比が1:1以外のケイ素酸化物、のうち少なくとも1つを含む絶縁体を含む請求項5に記載の磁気デバイス。
- 前記第1の非磁性層は、酸化マグネシウムMgOを含む絶縁体を含み、前記酸化マグネシウムMgOは、前記ピン止め磁化層及び前記自由磁化層のうち少なくとも1つを含むエピタキシャル格子配列を有する請求項5に記載の磁気デバイス。
- 磁化方向が固定された磁化ベクトルを含むピン止め磁化層と、
磁化方向が可変である少なくとも1つの磁化ベクトルを含む自由磁化層と、
前記自由磁化層と前記ピン止め磁化層とを空間的に分離する第1の非磁性層と、
を含んで構成され、
前記ピン止め磁化層は、垂直磁気異方性成分を有する磁気デバイス。 - 前記ピン止め磁化層は、垂直磁気異方性成分を有し、この成分は、磁化を、前記ピン止め磁化層に対して垂直に配向させるために十分な大きさである請求項9に記載の磁気デバイス。
- 前記ピン止め磁化層は、垂直磁気異方性成分を有し、かつ、FeとPtとの合金、FeとPdとの合金、CoとPtとの合金、CoとPdとの合金、CoとNiとの合金、及び、CoとAuとの合金、のうち少なくとも1つを含む請求項9に記載の磁気デバイス。
- 前記ピン止め磁化層は、異種の材料間の接合部によって実現される垂直磁気異方性成分を有する請求項9に記載の磁気デバイス。
- 前記接合部は、Co、Ni、Fe、又は、これらの元素の合金、を含んで構成される請求項12に記載の磁気デバイス。
- 前記接合部は、磁性材料と非磁性材料との間に配置され、前記磁性材料は、Co、Ni、Fe、CoとNiとの合金、CoとFeとの合金、NiとFeとの合金、のうち少なくとも1つを含み、かつ、前記非磁性材料は、Cu、Pt、Pd、及び、Au、のうち少なくとも1つを含む請求項13に記載の磁気デバイス。
- 磁化方向が固定された磁化ベクトルを含むピン止め磁化層と、
磁化方向が可変である1つ以上の磁化ベクトルを含む自由磁化層と、
前記自由磁化層と前記ピン止め磁化層とを空間的に分離する第1の非磁性層と、
を含んで構成され、
前記自由磁化層は、Co、Ni、Fe、及び、これらの元素の合金、のうち少なくとも1つを含んで構成され、かつ、前記少なくとも1つは、非磁性元素と更に合金化される磁気デバイス。 - 磁化方向が固定された磁化ベクトルを含むピン止め磁化層と、
磁化方向が可変である少なくとも1つの磁化ベクトルを含む自由磁化層と、
前記自由磁化層と前記ピン止め磁化層とを空間的に分離する第1の非磁性層と、
を含んで構成され、
前記自由磁化層は、Co、Ni、及び、Fe、のうち少なくとも1つを含んで構成され、かつ、Ti、V、Cr、Mn、又は、Cu、と合金化される磁気デバイス。 - 磁化方向が固定された磁化ベクトルを含むピン止め磁化層と、
磁化方向が可変である1つ以上の磁化ベクトルを含む自由磁化層と、
前記自由磁化層と前記ピン止め磁化層とを空間的に分離する第1の非磁性層と、
を含んで構成され、
前記自由磁化層は、Co、Ni、Fe、及び、これらの元素の合金、のうち少なくとも1つを含んで構成され、かつ、前記少なくとも1つは、磁気減衰を促進させる元素と更に合金化される磁気デバイス。 - 磁化方向が固定された磁化ベクトルを含むピン止め磁化層と、
磁化方向が可変である少なくとも1つの磁化ベクトルを含む自由磁化層と、
前記自由磁化層と前記ピン止め磁化層とを空間的に分離する第1の非磁性層と、
を含んで構成され、
前記自由磁化層には、Pd及びPtのうち少なくとも1つがドープされる磁気デバイス。 - 磁化方向が固定された磁化ベクトルを含むピン止め磁化層と、
磁化方向が可変である少なくとも1つの磁化ベクトルを含む自由磁化層と、
前記自由磁化層と前記ピン止め磁化層とを空間的に分離する第1の非磁性層と、
を含んで構成され、
前記自由磁化層には、希土類原子がドープされる磁気デバイス。
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US11/932,745 US7573737B2 (en) | 2003-08-19 | 2007-10-31 | High speed low power magnetic devices based on current induced spin-momentum transfer |
US11/932,745 | 2007-10-31 | ||
PCT/US2008/081893 WO2009059071A2 (en) | 2007-10-31 | 2008-10-30 | High speed low power magnetic devices based on current induced spin-momentum transfer |
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CN (1) | CN101896976B (ja) |
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WO2009059071A2 (en) | 2009-05-07 |
US20080259508A2 (en) | 2008-10-23 |
JP5414681B2 (ja) | 2014-02-12 |
CN101896976B (zh) | 2014-10-15 |
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EP2220651A4 (en) | 2010-12-08 |
US7573737B2 (en) | 2009-08-11 |
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CA2703696A1 (en) | 2009-05-07 |
WO2009059071A3 (en) | 2009-10-22 |
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US20080112094A1 (en) | 2008-05-15 |
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