JP2011501149A - CdTe/CdZnTe放射線イメージング検出器及び高/バイアス電圧手段 - Google Patents
CdTe/CdZnTe放射線イメージング検出器及び高/バイアス電圧手段 Download PDFInfo
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- 238000003384 imaging method Methods 0.000 title claims abstract description 21
- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 12
- 229910004611 CdZnTe Inorganic materials 0.000 title claims abstract description 10
- 239000004020 conductor Substances 0.000 claims abstract description 37
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000005684 electric field Effects 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 12
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- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000005060 rubber Substances 0.000 claims description 4
- UCHOFYCGAZVYGZ-UHFFFAOYSA-N gold lead Chemical compound [Au].[Pb] UCHOFYCGAZVYGZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004397 blinking Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
【選択図】 図1
Description
2 半導体イメージング検出器
3 基板
4 低電圧又は接地側
5 高電圧/バイアス電圧面
6 アルミニウム細線
7 超音波接合部
8 超音波接合部
Claims (20)
- 入射放射線に応答して生成された電子信号を読み出すための第1の主要な面、及び高電圧を印加するための第2の主要な面の、二つの主要な面を有する放射線イメージング/放射線検出・直接変換・化合物半導体検出器と、
前記検出器の内部で電界を発生させるために高電圧バイアスを提供する前記第2の主要な面上の高電圧バイアス手段接続部と、
を備え、
前記バイアス手段接続部は、二以上の個々の導体のうち、アルミニウムよりも低い酸化率を有する導体、700μm2よりも大きい当該導体の接触面を有する導体、直径が30μmよりも大きい導線、銅製導体、金製導体、銀製導体、白金製導体、導電性エポキシ樹脂接続部、導電性プラスチック接続部、及び導電性ゴム接続部からなる一群のうちの一つを備える
ことを特徴とする放射線イメージング/放射線検出・直接変換・化合物半導体検出器アセンブリ。 - 前記バイアス手段接続部は、直径が30μmよりも大きく、前記検出器の内部で電界を発生させるために前記高電圧バイアスを伝える導線を備えることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、700μm2よりも大きい当該導体の接触面を有し、前記検出器の内部で電界を発生させるために前記高電圧バイアスを伝える導体を備えることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、二以上の個々の導体を備え、各導体は前記検出器の内部で電界を発生させるために前記高電圧バイアスを伝えることを特徴とする請求項1に記載のアセンブリ。
- 入射放射線に応答して生成された電子信号を読み出すための第1の主要な面、及び第2の主要な面の、二つの主要な面を有する複数の前記放射線イメージング/放射線検出・直接変換・化合物半導体検出器を備え、
前記複数の検出器のうちの第1検出器は、前記検出器の内部で電界を発生させるために高電圧バイアスを提供する前記第2の主要な面上の前記高電圧バイアス手段接続部を有し、
前記複数の検出器のうちの他の検出器の各々は、複数の導体を用いて前記第2の主要な面が一の面から他の面にデイジーチェーン連結されるように、前記複数の検出器のうちの他の検出器にデイジーチェーン方式で一の導体を用いて接続された高電圧バイアス手段接続部を有する
ことを特徴とする請求項1に記載のアセンブリ。 - 前記検出器は、CdTe系検出器であることを特徴とする請求項1に記載のアセンブリ。
- 前記検出器は、CdZnTe系検出器であることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、銅線導体、金線導体、銀線導体、及び白金線導体からなる一群のうちの一の導線を備えることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、前記検出器の内部で電界を発生させるために前記高電圧バイアスを伝える銅製導線を備えることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、前記検出器の内部で電界を発生させるために前記高電圧バイアスを伝える金製導線を備えることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、前記検出器の内部で電界を発生させるために前記高電圧バイアスを伝える銀製導線を備えることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、前記検出器の内部で電界を発生させるために前記高電圧バイアスを伝える白金製導線を備えることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、導電性エポキシ樹脂接続部、導電性プラスチック接続部、及び導電性ゴム接続部からなる一群のうちの一つを備えることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、前記検出器の内部で電界を発生させるために前記高電圧バイアスを伝える導体に接続された導電性エポキシ樹脂接続部を備えることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、前記検出器の内部で電界を発生させるために前記高電圧バイアスを伝える導体に接続された導電性プラスチック接続部を備えることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、前記検出器の内部で電界を発生させるために前記高電圧バイアスを伝える導体に接続された導電性ゴム接続部を備えることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、アルミニウムよりも低い酸化率を有し、前記検出器の内部で電界を発生させるために前記高電圧バイアスを伝える導体を備えることを特徴とする請求項1に記載のアセンブリ。
- 前記バイアス手段接続部は、前記第2の主要な面に立て掛けた金属マイクロスプリング接続部を備えることを特徴とする請求項2に記載のアセンブリ。
- 前記バイアス手段接続部は、前記第2の主要な面に立て掛けた金属マイクロスプリング接続部を備えることを特徴とする請求項3に記載のアセンブリ。
- 前記バイアス手段接続部は、前記第2の主要な面に立て掛けた金属マイクロスプリング接続部を備えることを特徴とする請求項8に記載のアセンブリ。
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US11/933,497 US7741610B2 (en) | 2007-11-01 | 2007-11-01 | CdTe/CdZnTe radiation imaging detector and high/biasing voltage means |
PCT/IB2008/002925 WO2009056967A2 (en) | 2007-11-01 | 2008-10-31 | Cdtd/cdznte radiation imaging detector and high/biasing voltage means |
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US (1) | US7741610B2 (ja) |
EP (1) | EP2205993B1 (ja) |
JP (1) | JP2011501149A (ja) |
KR (1) | KR101091720B1 (ja) |
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US8742522B2 (en) | 2012-04-10 | 2014-06-03 | Ev Products, Inc. | Method of making a semiconductor radiation detector |
KR101635980B1 (ko) * | 2013-12-30 | 2016-07-05 | 삼성전자주식회사 | 방사선 디텍터 및 그에 따른 컴퓨터 단층 촬영 장치 |
CN104111470A (zh) | 2014-07-15 | 2014-10-22 | 清华大学 | 半导体探测器的信号处理方法及装置 |
EP3839575A1 (en) | 2019-12-17 | 2021-06-23 | Koninklijke Philips N.V. | Photon counting detector |
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Also Published As
Publication number | Publication date |
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US7741610B2 (en) | 2010-06-22 |
WO2009056967A3 (en) | 2010-03-18 |
EP2205993B1 (en) | 2016-10-19 |
WO2009056967A2 (en) | 2009-05-07 |
US20090114831A1 (en) | 2009-05-07 |
KR20100054863A (ko) | 2010-05-25 |
EP2205993A2 (en) | 2010-07-14 |
BRPI0819234B8 (pt) | 2020-12-01 |
KR101091720B1 (ko) | 2011-12-08 |
BRPI0819234A2 (pt) | 2017-05-02 |
BRPI0819234B1 (pt) | 2019-07-09 |
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