JP2011222869A - Semiconductor device - Google Patents

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JP2011222869A
JP2011222869A JP2010092412A JP2010092412A JP2011222869A JP 2011222869 A JP2011222869 A JP 2011222869A JP 2010092412 A JP2010092412 A JP 2010092412A JP 2010092412 A JP2010092412 A JP 2010092412A JP 2011222869 A JP2011222869 A JP 2011222869A
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covering portion
silicon
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semiconductor device
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Toru Izumi
徹 泉
Katsunori Asano
勝則 浅野
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Kansai Electric Power Co Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of attaining high heat resistance and high voltage resistance and improving adhesion between a coating part of a semiconductor element and a support body of the semiconductor element to allow a use at a high-temperature.SOLUTION: An annular end part 23 of a second coating part 16 that coats a surface 15A of a first coating part 15 which coats a surface of an SiC GTO thyristor element 1 placed on an upper surface 3A of a copper support body 3, engages with an annular engagement groove 21 of the support body 3. Since the annular end part 23 of the second coating part 16 which is engaged with the engagement groove 21 of the support body 3 plays a role as an anchor to the support body 3, the second coating part 16, having much difference in linear expansion coefficient from the support body 3, can be suppressed from peeling from the support body 3 at a high temperature (for example, 200°C or higher).

Description

この発明は、半導体装置に関し、例えば耐熱性が高い高耐電圧パワー半導体装置に関する。   The present invention relates to a semiconductor device, for example, a high withstand voltage power semiconductor device having high heat resistance.

一般的な半導体モジュールでは、半導体素子の表面の絶縁を確保するために素子被覆用レジンとしてのシリコーンゲルで半導体素子を覆い、さらにモールド用樹脂としてのエポキシ樹脂で上記シリコーンゲルを覆って封止している。   In a general semiconductor module, in order to ensure insulation of the surface of the semiconductor element, the semiconductor element is covered with a silicone gel as an element coating resin, and further, the silicone gel is covered with an epoxy resin as a molding resin and sealed. ing.

しかし、エポキシ樹脂は高温での柔軟性が乏しく、例えばＳｉＣ素子の高温の動作温度領域で２００℃以上になるとガラス化して硬くなってしまう。このため、半導体素子の温度が通電時の高温状態からオフ時の室温状態に戻ると、エポキシ樹脂の内部に多数のクラックが発生し、高電界には耐えることができず、耐電圧性はよくない。   However, the epoxy resin is poor in flexibility at high temperatures. For example, when the temperature becomes 200 ° C. or higher in the high temperature operating temperature region of the SiC element, it becomes vitrified and hardened. For this reason, when the temperature of the semiconductor element returns from the high temperature state at the time of energization to the room temperature state at the time of off, a large number of cracks are generated inside the epoxy resin, it cannot withstand a high electric field, and the withstand voltage is good. Absent.

そこで、特許文献１(特開２００９−２１２３４２号公報)では、図７に示すようなＧＴＯサイリスタ装置が記載されている。このＧＴＯサイリスタ装置は、ＧＴＯサイリスタ素子２０１を覆う被覆部２１５が、シロキサン(Ｓｉ−Ｏ−Ｓｉ結合体)による橋かけ構造を一箇所以上有する珪素含有重合体を含有し、かつ硬化反応触媒である白金系触媒、および鉄族含有錆体を含有する珪素含有硬化性組成物で形成されている。また、このＧＴＯサイリスタ装置は、上記被覆部２１５および支持体２１１上のアノード端子２０５,ゲート端子２０８を覆う被覆部２１６を有する。この被覆部２１６は、上記被覆部２１５を形成する上記珪素含有硬化性組成物に絶縁性セラミックスとして粒径２０μｍのアルミナ微粒子を５０％の体積充填率で配合した珪素含有硬化性組成物で形成されている。なお、図７において、２０２,２０６,２１０はアノード電極,ゲート電極,カソード電極、２０３,２０７はリード線、２１２,２１３は絶縁材である。   Therefore, in Patent Document 1 (Japanese Patent Laid-Open No. 2009-212342), a GTO thyristor device as shown in FIG. 7 is described. In this GTO thyristor device, the covering portion 215 covering the GTO thyristor element 201 contains a silicon-containing polymer having one or more cross-linked structures of siloxane (Si—O—Si conjugate), and is a curing reaction catalyst. It is formed with a silicon-containing curable composition containing a platinum-based catalyst and an iron group-containing rust. Further, this GTO thyristor device has a covering portion 216 that covers the covering portion 215 and the anode terminal 205 and the gate terminal 208 on the support 211. The covering portion 216 is formed of a silicon-containing curable composition in which alumina fine particles having a particle diameter of 20 μm are blended as insulating ceramics with the silicon-containing curable composition forming the covering portion 215 at a volume filling rate of 50%. ing. In FIG. 7, 202, 206 and 210 are anode electrodes, gate electrodes and cathode electrodes, 203 and 207 are lead wires, and 212 and 213 are insulating materials.

上記ＧＴＯサイリスタ装置によれば、高い耐熱性と高い耐電圧性を有すると共に高い柔軟性を有する被覆部２１５でもって、ＧＴＯサイリスタ素子２０１を絶縁できる。また、上記被覆部２１６は、高温(例えば２００℃以上)で使用してもクラック等が発生せず、高絶縁耐力を達成できる。また、上記被覆部２１６は上記セラミックスが配合されたことで線膨張係数が小さくなり、例えば銅等の金属で作製されてＧＴＯサイリスタ素子２０１を支持する支持体２１１との線膨張係数の差を低減させることで、被覆部２１６と支持体２１１との密着性の向上を図っている。   According to the GTO thyristor device, the GTO thyristor element 201 can be insulated by the covering portion 215 having high heat resistance, high voltage resistance and high flexibility. Further, the covering portion 216 does not generate cracks even when used at a high temperature (for example, 200 ° C. or higher), and can achieve high dielectric strength. In addition, the coating portion 216 has a smaller linear expansion coefficient due to the blending of the ceramics, and reduces the difference in linear expansion coefficient from the support 211 made of a metal such as copper and supporting the GTO thyristor element 201. By doing so, the adhesion between the covering portion 216 and the support 211 is improved.

しかし、上記ＧＴＯサイリスタ装置でも、被覆部２１６の線膨張係数１５０ｐｐｍと、銅製とした支持体２１１の線膨張係数１７ｐｐｍとの差はかなりあるので、高温(２００℃以上)で繰り返し熱ストレスがかかる環境で使用すると、支持体２１１と被覆部２１６との間に応力が発生して被覆部２１６が支持体２１１から徐々に剥離して封止機能が損なわれる可能性がある。この場合、半導体素子の耐電圧性の低下等が発生し、ＧＴＯサイリスタ装置の信頼性が低下するという問題がある。   However, even in the GTO thyristor device, since there is a considerable difference between the linear expansion coefficient of 150 ppm of the covering portion 216 and the linear expansion coefficient of 17 ppm of the support 211 made of copper, an environment in which repeated thermal stress is applied at a high temperature (200 ° C. or higher). If used, stress may be generated between the support 211 and the covering portion 216, and the covering portion 216 may gradually peel from the support 211 and the sealing function may be impaired. In this case, there is a problem that the withstand voltage of the semiconductor element is lowered and the reliability of the GTO thyristor device is lowered.

特開２００９−２１２３４２号公報JP 2009-212342 A

そこで、この発明の課題は、高耐熱性と高耐電圧性を達成できると共に半導体素子の被覆部と半導体素子の支持体との密着性を向上でき、高温での使用を可能にできる半導体装置を提供することにある。   Accordingly, an object of the present invention is to provide a semiconductor device that can achieve high heat resistance and high voltage resistance, improve adhesion between the covering portion of the semiconductor element and the support of the semiconductor element, and can be used at a high temperature. It is to provide.

上記課題を解決するため、この発明の半導体装置は、半導体素子と、
上記半導体素子が載置される支持体と、
上記半導体素子を外部機器に電気的に接続するための電気接続部と、
上記半導体素子および上記半導体素子が載置される上記支持体の上面を被覆すると共に上記電気接続部の少なくとも一部を被覆する第１の樹脂で作製された第１の被覆部と、
上記第１の被覆部の表面を被覆すると共に上記支持体に接する第２の樹脂で作製された第２の被覆部とを備え、
上記第２の樹脂の硬度は、上記第１の樹脂の硬度よりも大きく、
上記支持体は、
上記第２の被覆部の一部が密に嵌合されている嵌合部を有することを特徴としている。 In order to solve the above problems, a semiconductor device of the present invention includes a semiconductor element,
A support on which the semiconductor element is mounted;
An electrical connection for electrically connecting the semiconductor element to an external device;
A first covering portion made of a first resin that covers the upper surface of the semiconductor element and the support on which the semiconductor element is placed and covers at least a part of the electrical connection portion;
A second covering portion made of a second resin that covers the surface of the first covering portion and is in contact with the support;
The hardness of the second resin is greater than the hardness of the first resin,
The support is
It has a fitting part in which a part of the second covering part is closely fitted.

この発明の半導体装置では、上記支持体の上面に載置された半導体素子の表面を被覆する第１の被覆部の表面を被覆する第２の被覆部の一部が、上記支持体の嵌合部に密に嵌合している。この支持体の嵌合部に密に嵌合した第２の被覆部の一部が支持体に対するアンカーとしての役割を果たすので、一般に支持体との線膨張係数の差がかなりある第２の被覆部が高温時(例えば２００℃以上)に支持体から剥離するのを抑制できる。   In the semiconductor device of the present invention, a part of the second covering portion that covers the surface of the first covering portion that covers the surface of the semiconductor element placed on the upper surface of the supporting member is fitted to the support. The part is closely fitted. Since a part of the second covering portion closely fitted to the fitting portion of the support serves as an anchor for the support, the second covering generally has a considerable difference in linear expansion coefficient from the support. It can suppress that a part peels from a support body at the time of high temperature (for example, 200 degreeC or more).

ところで、上記第２の樹脂よりなる第２の被覆部の剥離はヒートサイクルによる膨張,収縮により外周部にできた僅かの隙間から空気が侵入し、周囲の高温環境と相まって樹脂の酸化,硬化が起こり、樹脂の接着力が低下することにより起こる。この樹脂の接着力の低下は、その後の樹脂の膨張,収縮により酸化が内部へと進展する。   By the way, peeling of the second covering portion made of the second resin described above causes air to enter through a slight gap formed in the outer peripheral portion due to expansion and contraction due to heat cycle, and the oxidation and hardening of the resin coupled with the surrounding high temperature environment. Occurs when the adhesive strength of the resin is reduced. This decrease in the adhesive strength of the resin causes oxidation to progress to the inside due to subsequent expansion and contraction of the resin.

これに対し、本発明では、上記第２の被覆部の膨張時には上記第２の被覆部が外周側に向けて上記支持体の嵌合部に押しつけられ、上記第２の被覆部の収縮時には上記第２の被覆部が内周側に向けて上記支持体の嵌合部に押しつけられる。これにより、上記第２の被覆部の膨張と収縮により第２の被覆部と支持体との間に隙間が発生することを抑制できて、上記嵌合部から内部への空気の侵入を抑制できる。   On the other hand, in the present invention, when the second covering portion is expanded, the second covering portion is pressed against the fitting portion of the support body toward the outer peripheral side, and when the second covering portion is contracted, the second covering portion is compressed. A 2nd coating | coated part is pressed on the fitting part of the said support body toward the inner peripheral side. Thereby, it can suppress that a clearance gap produces between a 2nd coating | coated part and a support body by expansion | swelling and shrinkage | contraction of the said 2nd coating | coated part, and can suppress the penetration | invasion of the air from the said fitting part to an inside. .

また、一実施形態の半導体装置では、上記支持体の上記嵌合部は、上記第１の被覆部の周囲を囲む形状であり、
上記第２の被覆部の上記一部は、上記支持体の上記嵌合部に密に嵌合されている端部である。 Moreover, in the semiconductor device of one embodiment, the fitting portion of the support body has a shape surrounding the periphery of the first covering portion,
The part of the second covering portion is an end portion that is closely fitted to the fitting portion of the support.

この実施形態の半導体装置によれば、上記支持体の嵌合部と上記第２の被覆部の端部とが上記第１の被覆部の周囲を囲んで密に嵌合しているので、第２の被覆部の支持体に対するアンカー作用が確実になり、上記支持体と第２の被覆部との接着力も向上して、第２の被覆部が支持体から剥離するのをより確実に防ぐことができる。   According to the semiconductor device of this embodiment, the fitting portion of the support body and the end portion of the second covering portion are closely fitted around the first covering portion. The anchoring action of the covering portion of 2 on the support is ensured, the adhesive force between the support and the second covering portion is improved, and the second covering portion is more reliably prevented from peeling off from the support. Can do.

また、一実施形態の半導体装置では、上記第１の樹脂および上記第２の樹脂は、線膨張係数が５００ｐｐｍ以下であると共にＪＩＳ規格の規格番号ＪＩＳ Ｃ ４００３による耐熱性クラスがＦ以上である。   In one embodiment of the semiconductor device, the first resin and the second resin have a linear expansion coefficient of 500 ppm or less and a heat resistance class according to JIS standard number JIS C 4003 of F or more.

この実施形態の半導体装置によれば、１５５℃以上の高温で使用しても、第１,第２の樹脂で作製された第１,第２の被覆部のクラック,剥離等が発生することを回避できる。なお、このような第１,第２の樹脂の一例としてはセラミック粒子を含有した有機珪素化合物が挙げられ、この場合、上記第２の樹脂のセラミック粒子の含有重量％を上記第１の樹脂のセラミック粒子の含有重量％よりも高くすることで、上記第２の樹脂の硬度を上記第１の樹脂の硬度よりも大きくすることができる。   According to the semiconductor device of this embodiment, even if it is used at a high temperature of 155 ° C. or higher, the first and second coating parts made of the first and second resins are cracked, peeled off, etc. Can be avoided. An example of such first and second resins is an organosilicon compound containing ceramic particles. In this case, the content percentage by weight of the ceramic particles of the second resin is the same as that of the first resin. By making it higher than the content% by weight of the ceramic particles, the hardness of the second resin can be made larger than the hardness of the first resin.

なお、上記第１,第２の樹脂の線膨張係数係数の下限値は、一例として、５ｐｐｍであるが５ｐｐｍ以下、例えば３ｐｐｍでも良い。   The lower limit value of the linear expansion coefficient coefficient of the first and second resins is 5 ppm as an example, but may be 5 ppm or less, for example, 3 ppm.

また、一実施形態の半導体装置では、
上記第１の被覆部を作製する第１の樹脂は、
下記の(Ａ)成分、(Ｂ)成分および(Ｄ)成分を含有する珪素含有硬化性組成物であり、
上記第２の被覆部を作製する第２の樹脂は、
下記の(Ａ)成分、(Ｂ)成分、(Ｄ)成分および (Ｆ)成分を含有する珪素含有硬化性組成物であり、
上記第２の被覆部は、上記珪素含有硬化性組成物を熱硬化させた硬化物であり、上記硬化物の線膨張係数が５０〜２００ｐｐｍ/℃であることを特徴としている。 In one embodiment of the semiconductor device,
The first resin for producing the first covering portion is
A silicon-containing curable composition containing the following component (A), component (B) and component (D):
The second resin for producing the second covering portion is:
A silicon-containing curable composition containing the following component (A), component (B), component (D) and component (F):
The said 2nd coating | coated part is the hardened | cured material which heat-cured the said silicon-containing curable composition, The linear expansion coefficient of the said hardened | cured material is 50-200 ppm / degreeC, It is characterized by the above-mentioned.

(Ａ)成分：下記一般式（１）で表される珪素含有化合物。

Figure 2011222869
（上式(１)中、Ｒ１〜Ｒ７は、同一でも異なっていてもよく、炭素原子数１〜１２の飽和脂肪族炭化水素基、又は、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基であり（但し、Ｒ５及びＲ６は同時に炭素原子数１〜１２の飽和脂肪族炭化水素基となることはない）、Ｒ８は炭素原子数２〜４のアルキレン基であり、Ｚは炭素原子数２〜４のアルケニル基若しくはアルキニル基であり、ａは２〜７の数であり、ｂは１〜７の数であり、ｂを繰り返し数とする重合部分と、ａ−ｂを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。ｅは０〜３の数である。ｃ及びｄは、ｄ：ｃ＝１：１〜１：１００且つ全てのｃと全てのｄとの合計が１５以上となる数であって、且つ一般式（１）で表される珪素含有化合物の質量平均分子量を３０００〜１００万とする数である。また、ｃを繰り返し数とする重合部分と、ｄを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。）
(Ｂ)成分：下記一般式（２）で表される珪素含有化合物。
Figure 2011222869
 （上式(２)中、Ｒ９〜Ｒ１５は、同一でも異なっていてもよく、炭素原子数１〜１２の飽和脂肪族炭化水素基、又は、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基であり（但し、Ｒ１３及びＲ１４は同時に炭素原子数１〜１２の飽和脂肪族炭化水素基となることはない）、Ｒ１６は炭素原子数２〜４のアルキレン基であり、Ｈは炭素原子数２〜４のアルケニル基若しくはアルキニル基であり、ｆは２〜７の数であり、ｇは１〜７の数であり、ｇを繰り返し数とする重合部分と、ｆ−ｇを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。ｊは０〜３の数である。ｈ及びｉは、ｉ：ｈ＝１：１〜１：１００且つ全てのｈと全てのｉとの合計が１５以上となる数であって、且つ一般式（２）で表される珪素含有化合物の質量平均分子量を３０００〜１００万とする数である。また、ｈを繰り返し数とする重合部分と、ｉを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。）
(Ｄ)成分：白金系触媒である硬化反応触媒
(Ｆ)成分：セラミックス粒子
この実施形態の半導体装置によれば、上記半導体素子および上記半導体素子が載置される上記支持体の上面を被覆すると共に電気接続部の少なくとも一部を被覆する第１の被覆部を、珪素含有硬化性組成物で作製した。そして、この珪素含有硬化性組成物は、上記の（Ａ）成分および（Ｂ）成分を含有し、かつ硬化反応触媒である白金系触媒を配合している。したがって、この高い耐熱性と高い耐電圧性を有すると共に高い柔軟性を有する第１の被覆部でもって、半導体素子を絶縁できる。 Component (A): A silicon-containing compound represented by the following general formula (1).
Figure 2011222869
 (In the above formula (1), R 1 to R 7 may be the same or different and are substituted with a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms or a saturated aliphatic hydrocarbon group. Or an aromatic hydrocarbon group having 6 to 12 carbon atoms (provided that R 5 and R 6 do not simultaneously become a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms), and R 8 is carbon. An alkylene group having 2 to 4 atoms, Z is an alkenyl group or alkynyl group having 2 to 4 carbon atoms, a is a number from 2 to 7, b is a number from 1 to 7, and b is The polymer moiety having the repeating number and the polymer moiety having the repeating number ab may be block-like or random, e is a number from 0 to 3. c and d are d: c = 1: 1 to 1: 100, and the sum of all c and all d is 15 or more, and The number average molecular weight of the silicon-containing compound represented by the general formula (1) is a number between 3000 and 1,000,000, and the polymerization portion where c is the number of repetitions and the polymerization portion where d is the number of repetitions are: It may be block or random.)
Component (B): A silicon-containing compound represented by the following general formula (2).
Figure 2011222869
 (In the above formula (2), R 9 to R 15 may be the same or different and are substituted with a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms or a saturated aliphatic hydrocarbon group. Or an aromatic hydrocarbon group having 6 to 12 carbon atoms (provided that R 13 and R 14 do not simultaneously become a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms), and R 16 is carbon. An alkylene group having 2 to 4 atoms, H is an alkenyl group or alkynyl group having 2 to 4 carbon atoms, f is a number from 2 to 7, g is a number from 1 to 7, and g is The polymerization part having the number of repetitions and the polymerization part having the number of repetitions of f-g may be in the form of blocks or random, j is a number from 0 to 3. h and i are i: h = 1: 1 to 1: 100 and the sum of all h and all i is 15 or more In addition, the silicon-containing compound represented by the general formula (2) has a mass average molecular weight of 3000 to 1,000,000, a polymer part having h as a repeat number, and a polymer part having i as a repeat number. And may be block or random.)
Component (D): a curing reaction catalyst that is a platinum catalyst
Component (F): Ceramic Particles According to the semiconductor device of this embodiment, the semiconductor device and the first surface that covers the upper surface of the support on which the semiconductor element is placed and at least a part of the electrical connection portion are covered. The coating part was made of a silicon-containing curable composition. And this silicon-containing curable composition contains the platinum-type catalyst which contains said (A) component and (B) component, and is a hardening reaction catalyst. Therefore, it is possible to insulate the semiconductor element with the first covering portion having high heat resistance and high voltage resistance and high flexibility.

また、上記第２の被覆部は、上記第１の被覆部の表面を被覆すると共に上記支持体に接しない珪素含有硬化性組成物で作製されている。この第２の被覆部を作製する珪素含有硬化性組成物は、上記の（Ａ）成分および（Ｂ）成分を含有し、かつ硬化反応触媒である白金系触媒を含有する珪素含有硬化性組成物に充填剤としてセラミックス粒子を配合している。上記第２の被覆部は高温(例えば２００℃以上)で使用してもクラック等が発生せず、高絶縁耐力を達成できる。   The second covering portion is made of a silicon-containing curable composition that covers the surface of the first covering portion and does not contact the support. The silicon-containing curable composition for producing the second covering portion contains the above-described component (A) and component (B) and a platinum-based catalyst that is a curing reaction catalyst. Ceramic particles as a filler. Even if the second covering portion is used at a high temperature (for example, 200 ° C. or higher), cracks and the like are not generated, and a high dielectric strength can be achieved.

また、第１の被覆部が支持体と第２の被覆部との間で緩衝材として働き、高温時の応力を低減できる。なお、上記第２の被覆部は、上記第１の被覆部の表面全体を被覆することが望ましい。   Moreover, the 1st coating | coated part works as a buffer material between a support body and a 2nd coating | coated part, and can reduce the stress at the time of high temperature. The second covering portion desirably covers the entire surface of the first covering portion.

また、上記セラミックス粒子の粒径は１〜５０μｍが好ましく、５〜２５μｍがより好ましい。また、上記第２の被覆部をなす上記珪素含有硬化性組成物に占めるセラミックスの体積充填率は４０〜７０％であるのが好ましく、５０〜６０％がより好ましい。これにより、上記珪素含有硬化性組成物を硬化させてなる硬化物の線膨張係数を５０〜２００ｐｐｍ/℃、より好ましくは１００〜１５０ｐｐｍ/℃にすることができる。なお、上記第２の被覆部をなす珪素含有硬化性組成物を硬化させてなる硬化物の線膨張係数を５０ｐｐｍ/℃より小さくすると、第１の被覆部との密着性が低下し、絶縁性が不足する。一方、上記第２の被覆部をなす珪素含有硬化性組成物を硬化させてなる硬化物の線膨張係数を２００ｐｐｍ/℃より大きくすると、硬度が低くなり半導体装置の保護能力が不足する。   The ceramic particles preferably have a particle size of 1 to 50 μm, more preferably 5 to 25 μm. Moreover, it is preferable that the volume filling rate of the ceramics which occupies for the said silicon-containing curable composition which comprises the said 2nd coating part is 40 to 70%, and 50 to 60% is more preferable. Thereby, the linear expansion coefficient of the hardened | cured material formed by hardening | curing the said silicon-containing curable composition can be 50-200 ppm / degreeC, More preferably, it can be 100-150 ppm / degreeC. If the linear expansion coefficient of the cured product obtained by curing the silicon-containing curable composition forming the second covering portion is less than 50 ppm / ° C., the adhesion with the first covering portion is lowered and the insulating property is reduced. Is lacking. On the other hand, when the linear expansion coefficient of a cured product obtained by curing the silicon-containing curable composition forming the second covering portion is greater than 200 ppm / ° C., the hardness is lowered and the protection capability of the semiconductor device is insufficient.

なお、上記(Ｄ)成分の白金系触媒は、白金、パラジウム及びロジウムの一種以上の金属を含有し、ヒドロシリル化反応を促進する触媒であり、公知のものを用いることができる。ヒドロシリル化反応用の触媒として用いられる該白金系触媒としては、白金−カルボニルビニルメチル錯体、白金−ジビニルテトラメチルジシロキサン錯体、白金−シクロビニルメチルシロキサン錯体、白金−オクチルアルデヒド錯体等が挙げられるほか、これらの触媒における白金を、同じく白金系金属であるパラジウムまたはロジウムに代えた化合物が挙げられ、これらは一種で用いてもよく又は二種以上を併用してもよい。硬化性の点から、白金を含有するものが好ましく、具体的には、白金−カルボニルビニルメチル錯体が特に好ましい。また、クロロトリストリフェニルホスフィンロジウム(I)等の、上記白金系金属を含有するいわゆるＷｉｌｋｉｎｓｏｎ触媒も、(Ｄ)成分の白金系触媒に含まれる。   The platinum catalyst of the component (D) is a catalyst that contains one or more metals of platinum, palladium, and rhodium and promotes the hydrosilylation reaction, and known ones can be used. Examples of the platinum-based catalyst used as a catalyst for hydrosilylation include platinum-carbonylvinylmethyl complex, platinum-divinyltetramethyldisiloxane complex, platinum-cyclovinylmethylsiloxane complex, platinum-octylaldehyde complex, etc. The compounds in which platinum in these catalysts is replaced with palladium or rhodium, which are also platinum-based metals, may be used, and these may be used alone or in combination of two or more. From the viewpoint of curability, those containing platinum are preferred, and specifically, platinum-carbonylvinylmethyl complexes are particularly preferred. In addition, so-called Wilkinson catalysts containing the above platinum-based metals, such as chlorotristriphenylphosphine rhodium (I), are also included in the platinum catalyst of component (D).

また、上記(Ｆ)成分のセラミックス粒子の例としては、コロイダルシリカ、シリカフィラー、シリカゲル、マイカやモンモリロナイト等の鉱物、酸化アルミニウムや酸化亜鉛、二酸化珪素等の金属酸化物、窒化珪素、窒化アルミニウム、窒化ホウ素、炭化珪素等のセラミックス等が挙げられる。耐熱性の点から、酸化アルミニウムが好ましい。   Examples of the ceramic particles of the component (F) include colloidal silica, silica filler, silica gel, minerals such as mica and montmorillonite, metal oxides such as aluminum oxide, zinc oxide, and silicon dioxide, silicon nitride, aluminum nitride, Examples thereof include ceramics such as boron nitride and silicon carbide. Aluminum oxide is preferable from the viewpoint of heat resistance.

また、この実施形態によれば、上記第２の被覆部をなす硬化物の線膨張係数が５０ｐｐｍ/℃以上なので、第１の被覆部との密着性が良く、かつ、上記硬化物の線膨張係数が２００ｐｐｍ/℃以下なので、半導体装置を保護できる程度の硬度が得られる。   Moreover, according to this embodiment, since the linear expansion coefficient of the cured product forming the second covering portion is 50 ppm / ° C. or more, the adhesiveness with the first covering portion is good, and the linear expansion of the cured product is performed. Since the coefficient is 200 ppm / ° C. or less, a hardness that can protect the semiconductor device can be obtained.

また、一実施形態の半導体装置では、上記第１の被覆部は、上記(Ｆ)成分を含有し、
さらに、上記第１の被覆部に表面が被覆されていると共に上記半導体素子を直接被覆する第３の被覆部と、
上記第２の被覆部に表面が被覆されていると共に上記第１の被覆部を直接被覆する第４の被覆部とを備え、
上記第３の被覆部および第４の被覆部を作製する珪素含有硬化性組成物は、
上記の(Ａ)成分、(Ｂ)成分、(Ｄ)成分および(Ｆ)成分を含有する珪素含有硬化性組成物であり、
上記第３および第４の被覆部を作製する珪素含有硬化性組成物の成分の内の上記(Ｆ)成分の含有重量％が上記第１および第２の被覆部を作製する珪素含有硬化性組成物の成分の内の上記(Ｆ)成分の含有重量％よりも低い。 In the semiconductor device of one embodiment, the first covering portion contains the component (F),
Further, a third covering portion whose surface is coated on the first covering portion and directly covering the semiconductor element;
A surface of the second covering portion is coated and a fourth covering portion that directly covers the first covering portion;
The silicon-containing curable composition for producing the third covering portion and the fourth covering portion is:
A silicon-containing curable composition containing the above component (A), component (B), component (D) and component (F),
Of the components of the silicon-containing curable composition for producing the third and fourth coating parts, the content weight percentage of the component (F) is the silicon-containing curable composition for producing the first and second coating parts. It is lower than the content weight% of the component (F) among the components of the product.

この実施形態の半導体装置によれば、上記半導体素子を直接被覆する第３の被覆部および上記第１の被覆部を直接被覆する第４の被覆部の成分の内の上記(Ｆ)成分の含有重量％を第１,第２の被覆部の成分の内の上記(Ｆ)成分の含有重量％よりも低くした。これにより、上記第３,第４の被覆部の粘度と接着力を、上記第１,第２の被覆部の粘度と接着力に比べて高くすることができる。なお、上記第３,第４の被覆部の(Ｆ)成分の含有重量％を、５％以下にすることが望ましい。また、上記第３,第４の被覆部の(Ｆ)成分の含有重量％を略零％とすることがより好ましい。   According to the semiconductor device of this embodiment, inclusion of the component (F) among the components of the third covering portion that directly covers the semiconductor element and the fourth covering portion that directly covers the first covering portion. % By weight was lower than the content% by weight of the component (F) in the components of the first and second coating parts. Thereby, the viscosity and adhesive force of the said 3rd, 4th coating | coated part can be made high compared with the viscosity and adhesive force of the said 1st, 2nd coating | coated part. In addition, it is desirable that the content weight% of the component (F) in the third and fourth covering portions is 5% or less. Further, it is more preferable that the content% by weight of the component (F) in the third and fourth covering portions is substantially zero%.

また、一実施形態の半導体装置では、上記半導体素子と上記支持体との間に配置されたセラミック絶縁基板を備える。   In one embodiment, the semiconductor device includes a ceramic insulating substrate disposed between the semiconductor element and the support.

この実施形態の半導体装置によれば、上記半導体素子を上記セラミック絶縁基板で上記支持体から絶縁できる。なお、上記セラミック絶縁基板は、一例として酸化アルミニウム,窒化アルミニウム,窒化ケイ素等で作製される。   According to the semiconductor device of this embodiment, the semiconductor element can be insulated from the support by the ceramic insulating substrate. The ceramic insulating substrate is made of aluminum oxide, aluminum nitride, silicon nitride or the like as an example.

また、一実施形態の半導体装置では、上記支持体は、銅,アルミニウムのような金属、または、Ａｌ‐ＳｉＣのような金属と半導体の複合材料、または、銅とモリブデン等の異種金属の積層構造材料で作製されている。   In one embodiment of the semiconductor device, the support is made of a metal such as copper or aluminum, a composite material of a metal and a semiconductor such as Al-SiC, or a stacked structure of different metals such as copper and molybdenum. Made of material.

また、一実施形態の半導体装置では、上記支持体の表面が金、ニッケル、錫、亜鉛、クロム等でメッキされている。   In one embodiment, the surface of the support is plated with gold, nickel, tin, zinc, chromium, or the like.

また、一実施形態の半導体装置では、上記半導体素子が、ワイドギヤップ半導体で作製されたワイドギヤップ半導体素子である。   In one embodiment, the semiconductor element is a wide gear semiconductor element made of a wide gear semiconductor.

この実施形態の半導体装置によれば、高い耐熱性と高い耐電圧性を有すると共に高い柔軟性を有する第１の被覆部でもって、ＳｉＣもしくはＧａＮあるいはその他のワイドギャップ半導体で作製されたワイドギヤップ半導体素子を絶縁でき、上記第１の被覆部の表面全体を被覆するが上記支持体に接しない上記第２の被覆部は高温(例えば２００℃以上)で使用してもクラック等が発生せず、高絶縁耐力を達成できる。   According to the semiconductor device of this embodiment, a wide gap semiconductor made of SiC, GaN, or other wide gap semiconductor with a first covering portion having high heat resistance and high voltage resistance and high flexibility. The element can be insulated, and the second covering portion that covers the entire surface of the first covering portion but is not in contact with the support does not generate cracks even when used at a high temperature (eg, 200 ° C. or higher). High dielectric strength can be achieved.

この発明の半導体装置によれば、支持体の上面に載置された半導体素子の表面を被覆する第１の被覆部の表面を被覆する第２の被覆部の一部が、上記支持体の嵌合部に密に嵌合する。この支持体の嵌合部に密に嵌合した第２の被覆部の一部が支持体に対するアンカーとしての役割を果たすと共に上記嵌合部から内部への空気の侵入を抑制するので、一般に支持体との線膨張係数の差がかなりある第２の被覆部が高温時(例えば２００℃以上)に支持体から剥離するのを抑制できる。   According to the semiconductor device of the present invention, a part of the second covering portion that covers the surface of the first covering portion that covers the surface of the semiconductor element placed on the upper surface of the supporting member is fitted on the support member. Fits closely to the joint. Since a part of the second covering portion closely fitted to the fitting portion of the support body serves as an anchor for the support body and suppresses intrusion of air from the fitting portion to the inside, it is generally supported. It can suppress that the 2nd coating | coated part with the difference of a linear expansion coefficient with a body is peeling from a support body at the time of high temperature (for example, 200 degreeC or more).

この発明の半導体装置の第１実施形態であるＳｉＣ ＧＴＯサイリスタを備えた半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device provided with the SiC GTO thyristor which is 1st Embodiment of the semiconductor device of this invention. この発明の半導体装置の第２実施形態であるＳｉＣ ＧＴＯサイリスタを備えた半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device provided with the SiC GTO thyristor which is 2nd Embodiment of the semiconductor device of this invention. この発明の半導体装置の第３実施形態であるＳｉＣ ＧＴＯサイリスタを備えた半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device provided with the SiC GTO thyristor which is 3rd Embodiment of the semiconductor device of this invention. この発明の半導体装置の第４実施形態であるＳｉＣ ＧＴＯサイリスタを備えた半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device provided with the SiC GTO thyristor which is 4th Embodiment of the semiconductor device of this invention. この発明の半導体装置の第５実施形態であるＳｉＣ ＧＴＯサイリスタを備えた半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device provided with the SiC GTO thyristor which is 5th Embodiment of the semiconductor device of this invention. この発明の半導体装置の第４実施形態の変形例の半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device of the modification of 4th Embodiment of the semiconductor device of this invention. 従来の半導体装置を示す断面図である。It is sectional drawing which shows the conventional semiconductor device.

以下、この発明を図示の実施の形態により詳細に説明する。なお、この発明はこれらの実施形態により限定されるものではない。   Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments. Note that the present invention is not limited to these embodiments.

(第１の実施の形態)
図１は、この発明の半導体装置の第１実施形態の断面図である。この第１実施形態の半導体装置は、耐圧５ｋＶのＳｉＣ ＧＴＯサイリスタ素子１を有し、このＳｉＣ サイリスタ素子１を銅製の支持体３の上面３Ａに載置している。 (First embodiment)
FIG. 1 is a sectional view of a semiconductor device according to a first embodiment of the present invention. The semiconductor device according to the first embodiment includes a SiC GTO thyristor element 1 having a withstand voltage of 5 kV, and this SiC thyristor element 1 is mounted on an upper surface 3A of a support 3 made of copper.

このＳｉＣ ＧＴＯサイリスタ素子１のアノード電極２はアルミニウム,金,銅等で作製されるリード線７によりアノード端子１０の上端に接続されている。また、ＧＴＯサイリスタ素子１のゲート電極６は、アルミニウム,金,銅等で作製されるリード線８によりゲート端子１１の上端に接続されている。このリード線７,８と、アノード端子１０およびゲート端子１１は電気接続部である。   The anode electrode 2 of the SiC GTO thyristor element 1 is connected to the upper end of the anode terminal 10 by a lead wire 7 made of aluminum, gold, copper or the like. The gate electrode 6 of the GTO thyristor element 1 is connected to the upper end of the gate terminal 11 by a lead wire 8 made of aluminum, gold, copper or the like. The lead wires 7, 8 and the anode terminal 10 and the gate terminal 11 are electrical connection portions.

また、上記ＳｉＣ ＧＴＯサイリスタ素子１のカソード電極４はカソード端子であるパッケージの銅製の支持体３に金シリコン,金スズ,金ゲルマニウムのような金系半田やその他の高温用半田を用いて電気的接続を保って取り付けられている。アノード端子１０およびゲート端子１１はそれぞれセラミック等の絶縁材１４,１９で支持体３との間の絶縁を保ちつつ支持体３を貫通して固定されている。なお、上記支持体３は、アルミニウム、または、Ａｌ‐ＳｉＣのような金属と半導体の複合材料、または、銅とモリブデン等の異種金属の積層構造材料で作製されていてもよい。   Further, the cathode electrode 4 of the SiC GTO thyristor element 1 is electrically connected to the copper support 3 of the package as a cathode terminal by using a gold-based solder such as gold silicon, gold tin, gold germanium or other high-temperature solder. It is attached to keep the connection. The anode terminal 10 and the gate terminal 11 are fixed through the support body 3 while maintaining insulation between the anode terminal 10 and the gate terminal 11 with insulating materials 14 and 19 such as ceramics. The support 3 may be made of aluminum or a metal / semiconductor composite material such as Al—SiC, or a laminated structure material of dissimilar metals such as copper and molybdenum.

上記ＳｉＣ ＧＴＯサイリスタ素子１の全表面、およびリード線７,８とＳｉＣ ＧＴＯサイリスタ素子１との接続部近傍、および支持体３の上面３Ａの大部分と、支持体３の上面３Ａから突出したアノード端子１０,ゲート端子１１を覆うように、第１の被覆部である被覆部１５となる第１の珪素含有硬化性組成物が塗布されている。   The entire surface of the SiC GTO thyristor element 1, the vicinity of the connecting portion between the lead wires 7 and 8 and the SiC GTO thyristor element 1, most of the upper surface 3 A of the support 3, and the anode protruding from the upper surface 3 A of the support 3 A first silicon-containing curable composition is applied so as to cover the terminal 10 and the gate terminal 11 and serve as the covering portion 15 as the first covering portion.

この第１の被覆部１５として使用される第１の珪素含有硬化性組成物は、次に説明する合成工程１から合成工程５によって合成した。なお、この合成工程１〜５において「部」とは重量部を表す。上記第１の珪素含有硬化性組成物を２５０℃にて３時間硬化反応させることにより第１の被覆部１５が得られる。   The first silicon-containing curable composition used as the first covering portion 15 was synthesized by the synthesis step 1 to the synthesis step 5 described below. In the synthesis steps 1 to 5, “part” represents part by weight. The 1st coating | coated part 15 is obtained by carrying out hardening reaction of the said 1st silicon containing curable composition at 250 degreeC for 3 hours.

さらに、この実施形態では、上記支持体３に嵌合部をなす嵌合溝２１が形成されている。この嵌合溝２１は、第１の被覆部１５の周囲を囲むように延在している。なお、一例として、上記嵌合溝２１は、第１の被覆部１５の周縁形状に対応して四角形,楕円,円等の形状に第１の被覆部１５の周囲を囲むように延在していればよい。また、上記嵌合溝２１は必ずしも連続的に第１の被覆部の周囲を囲んでいなくてもよく、第１の被覆部の周囲を断続的あるいは部分的に囲んでいてもよい。   Further, in this embodiment, a fitting groove 21 that forms a fitting portion is formed in the support 3. The fitting groove 21 extends so as to surround the first covering portion 15. As an example, the fitting groove 21 extends in a shape such as a quadrangle, an ellipse, or a circle so as to surround the first cover 15 corresponding to the peripheral shape of the first cover 15. Just do it. Further, the fitting groove 21 does not necessarily continuously surround the first covering portion, and may intermittently or partially surround the first covering portion.

また、上記嵌合溝２１に隣接し嵌合溝２１を囲むように支持体３の突起２２が延在している。上記支持体３の嵌合溝２１には、上記第２の被覆部１６の端部２３が密に嵌合している。なお、一例として、上記端部２３は、第１の被覆部１５,嵌合溝２１の周縁形状に対応して四角形,楕円形,円形,多角形等の形状に第１の被覆部１５の周囲を囲むように延在していればよい。また、上記嵌合溝２１は必ずしも連続的に第１の被覆部の周囲を囲んでいなくてもよく、第１の被覆部の周囲を断続的あるいは部分的に囲んでいてもよい。   Further, a protrusion 22 of the support 3 extends so as to be adjacent to the fitting groove 21 and surround the fitting groove 21. The end 23 of the second covering portion 16 is closely fitted in the fitting groove 21 of the support 3. In addition, as an example, the end portion 23 has a shape such as a quadrangular shape, an elliptical shape, a circular shape, or a polygon shape corresponding to the peripheral shape of the first covering portion 15 and the fitting groove 21. It only has to extend so as to surround. Further, the fitting groove 21 does not necessarily continuously surround the first covering portion, and may intermittently or partially surround the first covering portion.

また、上記第２の被覆部１６の環状の段差部２５が上記支持体３の環状の突起２２に嵌合している。なお、上記支持体３の環状の突起２２はなくてもよい。   Further, the annular step portion 25 of the second covering portion 16 is fitted to the annular protrusion 22 of the support 3. The annular protrusion 22 of the support 3 may not be provided.

この第２の被覆部１６として使用される第２の珪素含有硬化性組成物は上記第１の珪素含有硬化性組成物に絶縁性セラミックスとして粒径２０μｍのアルミナ微粒子を５０％の体積充填率で配合している。この第２の珪素含有硬化性組成物を２００℃にて６時間硬化反応させることにより第１の被覆部１６が得られる。また、上記硬化後の第２の珪素含有硬化性組成物の線膨張係数は１５０ｐｐｍ/℃である。   The second silicon-containing curable composition used as the second covering portion 16 is composed of alumina fine particles having a particle diameter of 20 μm as insulating ceramics in the first silicon-containing curable composition at a volume filling rate of 50%. It is blended. The 1st coating | coated part 16 is obtained by making this 2nd silicon-containing curable composition make hardening reaction at 200 degreeC for 6 hours. The linear expansion coefficient of the second silicon-containing curable composition after curing is 150 ppm / ° C.

〔合成工程１〕 ジクロロジメチルシラン９０部とジクロロジフェニルシラン９部とを混合し、１００部のイオン交換水、５０部のトルエン及び４５０部の４８％水酸化ナトリウム水溶液の混合物中に滴下し、１０５℃で５時間重合させた。得られた反応溶液を５００部のイオン交換水で水洗した後、このトルエン溶液を脱水し、ピリジンを２０部加え、これにさらにジメチルクロロシラン２０部を加えて７０℃で３０分間攪拌した。その後、１００部のイオン交換水で水洗した後、１５０℃で溶媒を減圧留去した。次に１００部のアセトニトリルで洗浄し、その後、７０℃で溶媒を減圧留去し、鎖状ポリシロキサン化合物（ＨＳｉ−１）を得た。鎖状ポリシロキサン化合物（ＨＳｉ−１）のＧＰＣによる分子量はＭｗ＝２０，０００であった。   [Synthesis step 1] 90 parts of dichlorodimethylsilane and 9 parts of dichlorodiphenylsilane were mixed and dropped into a mixture of 100 parts of ion-exchanged water, 50 parts of toluene and 450 parts of 48% aqueous sodium hydroxide, Polymerization was carried out at 5 ° C. for 5 hours. The obtained reaction solution was washed with 500 parts of ion exchange water, and then this toluene solution was dehydrated, 20 parts of pyridine was added, 20 parts of dimethylchlorosilane was further added thereto, and the mixture was stirred at 70 ° C. for 30 minutes. Then, after washing with 100 parts of ion exchange water, the solvent was distilled off under reduced pressure at 150 ° C. Next, it was washed with 100 parts of acetonitrile, and then the solvent was distilled off under reduced pressure at 70 ° C. to obtain a chain polysiloxane compound (HSi-1). The molecular weight by GPC of the chain polysiloxane compound (HSi-1) was Mw = 20,000.

〔合成工程２〕上記合成工程１で得られた非環状ポリシロキサン化合物（ＨＳｉ−１）１００部をトルエン２００部に溶かし、白金系触媒として白金−カルボニルビニルメチル錯体０．００３部、及び不飽和結合を有する環状ポリシロキサン化合物である１，３，５，７−テトラメチル−１，３，５，７−テトラビニルシクロテトラシロキサン１０部を加え、１０５℃で２時間反応させた。７０℃で溶媒を減圧留去した後にアセトニトリル１００部で洗浄した。その後、７０℃で溶媒を減圧留去し、珪素含有化合物（ＶＳｉ−１）を得た。珪素含有化合物（ＶＳｉ−１）は、前記一般式（１）に該当する化合物であり、ＧＰＣによる分析の結果、Ｍｗ＝２２，０００であった。   [Synthesis Step 2] 100 parts of the acyclic polysiloxane compound (HSi-1) obtained in Synthesis Step 1 above is dissolved in 200 parts of toluene, 0.003 part of platinum-carbonylvinylmethyl complex as a platinum-based catalyst, and unsaturated 10 parts of 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, which is a cyclic polysiloxane compound having a bond, was added and reacted at 105 ° C. for 2 hours. The solvent was distilled off under reduced pressure at 70 ° C. and then washed with 100 parts of acetonitrile. Thereafter, the solvent was distilled off under reduced pressure at 70 ° C. to obtain a silicon-containing compound (VSi-1). The silicon-containing compound (VSi-1) is a compound corresponding to the general formula (1), and as a result of analysis by GPC, Mw = 22,000.

〔合成工程３〕 ジクロロジメチルシラン９０部とジクロロジフェニルシラン９部とを混合し、１００部のイオン交換水、５０部のトルエン及び４５０部の４８％水酸化ナトリウム水溶液の混合物中に滴下し、１０５℃で５時間重合させた。得られた反応溶液を５００部のイオン交換水で水洗した後に、このトルエン溶液を脱水し、ピリジンを２０部加え、これにさらにジメチルビニルクロロシラン２０部を加えて７０℃で３０分間攪拌した。その後、１００部のイオン交換水で水洗した後、１５０℃で溶媒を減圧留去した。次に１００部のアセトニトリルで洗浄し、その後、７０℃で溶媒を減圧留去し、不飽和結合を有する鎖状ポリシロキサン化合物（ＶＳｉ−２）を得た。不飽和結合を有する鎖状ポリシロキサン化合物（ＶＳｉ−２）のＧＰＣによる分子量はＭｗ＝２０，０００であった。   [Synthesis Step 3] 90 parts of dichlorodimethylsilane and 9 parts of dichlorodiphenylsilane were mixed and dropped into a mixture of 100 parts of ion exchange water, 50 parts of toluene and 450 parts of 48% aqueous sodium hydroxide, Polymerization was carried out at 5 ° C. for 5 hours. The obtained reaction solution was washed with 500 parts of ion exchange water, and then this toluene solution was dehydrated, 20 parts of pyridine was added, 20 parts of dimethylvinylchlorosilane was further added, and the mixture was stirred at 70 ° C. for 30 minutes. Then, after washing with 100 parts of ion exchange water, the solvent was distilled off under reduced pressure at 150 ° C. Next, it was washed with 100 parts of acetonitrile, and then the solvent was distilled off under reduced pressure at 70 ° C. to obtain a chain polysiloxane compound (VSi-2) having an unsaturated bond. The molecular weight by GPC of the chain polysiloxane compound (VSi-2) having an unsaturated bond was Mw = 20,000.

〔合成工程４〕上記合成工程１で得られた不飽和結合を有する非環状ポリシロキサン化合物（ＶＳｉ−２）１００部をトルエン２００部に溶かし、白金系触媒として白金−カルボニルビニルメチル錯体０．００３部、及び環状ポリシロキサン化合物である１，３，５，７−テトラメチルシクロテトラシロキサン１０部を加え、１０５℃で２時間反応させた。７０℃で溶媒を減圧留去した後にアセトニトリル１００部で洗浄した。その後、７０℃で溶媒を減圧留去し、珪素含有化合物（ＨＳｉ−２）を得た。珪素含有化合物（ＨＳｉ−２）は、前記一般式（２）に相当する化合物であり、ＧＰＣによる分子量は、Ｍｗ＝２２，０００であった。   [Synthesis Step 4] 100 parts of an acyclic polysiloxane compound (VSi-2) having an unsaturated bond obtained in Synthesis Step 1 above is dissolved in 200 parts of toluene, and a platinum-carbonylvinylmethyl complex 0.003 as a platinum catalyst. And 10 parts of 1,3,5,7-tetramethylcyclotetrasiloxane, which is a cyclic polysiloxane compound, were added and reacted at 105 ° C. for 2 hours. The solvent was distilled off under reduced pressure at 70 ° C. and then washed with 100 parts of acetonitrile. Thereafter, the solvent was distilled off under reduced pressure at 70 ° C. to obtain a silicon-containing compound (HSi-2). The silicon-containing compound (HSi-2) is a compound corresponding to the general formula (2), and the molecular weight by GPC was Mw = 22,000.

〔合成工程５〕（Ａ）成分として上記合成工程２で得られた珪素含有化合物（ＶＳｉ−１）５０部と（Ｂ）成分として上記合成工程４で得られた珪素含有化合物（ＨＳｉ−２）５０部とを混合したものに、（Ｄ）成分として白金系触媒である白金−カルボニルビニルメチル錯体０．００５部を混合して、上記第１の珪素含有硬化性組成物を得た。   [Synthesis step 5] 50 parts of the silicon-containing compound (VSi-1) obtained in the synthesis step 2 as the component (A) and the silicon-containing compound (HSi-2) obtained in the synthesis step 4 as the component (B) To the mixture of 50 parts, 0.005 part of a platinum-carbonylvinylmethyl complex, which is a platinum catalyst, was mixed as component (D) to obtain the first silicon-containing curable composition.

この実施形態によれば、上記支持体３の上面３Ａに載置されたＧＴＯサイリスタ素子１の表面を被覆する第１の被覆部１５の表面１５Ａを被覆する第２の被覆部１６の環状の端部２３が、上記支持体３の環状の嵌合溝２１に密に嵌合している。この支持体３の嵌合溝２１に上記第２の樹脂としての第２の珪素含有硬化性組成物が流し込まれることで密に嵌合した第２の被覆部１６の環状の端部２３が支持体３に対するアンカーとしての機能を果たす。これにより、支持体３との線膨張係数の差がかなりある第２の被覆部１６が高温時(例えば２００℃以上)に支持体３から剥離するのを抑制できる。また、上記第２の被覆部１６の環状の段差部２５が上記支持体３の環状の突起２２に外周側から嵌合しているので、第２の被覆部１６の環状の端部２３を支持体３の環状の嵌合溝２１から外れにくくでき、上記アンカーの機能を強化できる。   According to this embodiment, the annular end of the second covering portion 16 that covers the surface 15A of the first covering portion 15 that covers the surface of the GTO thyristor element 1 placed on the upper surface 3A of the support 3 is provided. The portion 23 is closely fitted in the annular fitting groove 21 of the support 3. The annular end 23 of the second covering portion 16 that is closely fitted by the second silicon-containing curable composition as the second resin being poured into the fitting groove 21 of the support 3 is supported. It functions as an anchor for the body 3. Thereby, it can suppress that the 2nd coating | coated part 16 with a considerable difference of a linear expansion coefficient with the support body 3 peels from the support body 3 at the time of high temperature (for example, 200 degreeC or more). Further, since the annular step portion 25 of the second covering portion 16 is fitted to the annular protrusion 22 of the support 3 from the outer peripheral side, the annular end portion 23 of the second covering portion 16 is supported. It can be hard to come off from the annular fitting groove 21 of the body 3, and the function of the anchor can be strengthened.

また、上記第２の被覆部１６の膨張時には上記第２の被覆部１６の端部２３が外周側に向けて上記支持体３の嵌合溝２１の外周面に押しつけられ、上記第２の被覆部１６の収縮時には上記第２の被覆部１６の端部２３が内周側に向けて上記嵌合溝２１の内周面に押しつけられる。よって、第２の被覆部１６の膨張と収縮により第２の被覆部１６と支持体３との間に隙間が発生することを抑制できて、上記嵌合溝２１から内部への空気の侵入を抑制できる。   Further, when the second covering portion 16 is expanded, the end portion 23 of the second covering portion 16 is pressed against the outer peripheral surface of the fitting groove 21 of the support body 3 toward the outer peripheral side, and the second covering portion 16 is pressed. When the portion 16 contracts, the end portion 23 of the second covering portion 16 is pressed against the inner peripheral surface of the fitting groove 21 toward the inner peripheral side. Therefore, it can suppress that a clearance gap generate | occur | produces between the 2nd coating | coated part 16 and the support body 3 by expansion and contraction of the 2nd coating | coated part 16, and the penetration | invasion of the air from the said fitting groove | channel 21 to the inside is possible. Can be suppressed.

また、この実施形態によれば、第２の被覆部１６となる第２の珪素含有硬化性組成物は上記第１の珪素含有硬化性組成物にセラミックスとしての粒径２０μｍのアルミナ微粒子を５０％の体積充填率で配合している。そして、この第２の珪素含有硬化性組成物を２００℃にて６時間硬化反応させることにより第２の被覆部１６とした。上記硬化後の第２の珪素含有硬化性組成物の線膨張係数は１５０ｐｐｍ/℃である。この実施形態によれば、上記第２の被覆部１６は高温(例えば２００℃以上)で使用してもクラック等が発生せず、高絶縁耐力を達成できる。また、第１の被覆部１５が支持体３と第２の被覆部１６との間で緩衝材として働き、高温時の応力を低減できる。   Further, according to this embodiment, the second silicon-containing curable composition to be the second covering portion 16 is 50% alumina fine particles having a particle diameter of 20 μm as ceramics in the first silicon-containing curable composition. It is blended at a volume filling rate of. The second silicon-containing curable composition was subjected to a curing reaction at 200 ° C. for 6 hours to obtain the second covering portion 16. The linear expansion coefficient of the second silicon-containing curable composition after curing is 150 ppm / ° C. According to this embodiment, even if the second covering portion 16 is used at a high temperature (for example, 200 ° C. or higher), cracks and the like do not occur, and a high dielectric strength can be achieved. Moreover, the 1st coating | coated part 15 works as a buffer material between the support body 3 and the 2nd coating | coated part 16, and can reduce the stress at the time of high temperature.

なお、上記第１,第２の珪素含有硬化性組成物が含有する上記珪素含有重合体(Ａ),(Ｂ)としては、次に示す組成のものを採用できることが、実験により確認された。   It has been experimentally confirmed that the silicon-containing polymers (A) and (B) contained in the first and second silicon-containing curable compositions can employ the following compositions.

珪素含有重合体(Ａ)成分：下記（Ａ）成分：下記一般式（１）で表される珪素含有化合物。

Figure 2011222869
（式中、Ｒ１〜Ｒ７は、同一でも異なっていてもよく、炭素原子数１〜１２の飽和脂肪族炭化水素基、又は、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基であり（但し、Ｒ５及びＲ６は同時に炭素原子数１〜１２の飽和脂肪族炭化水素基となることはない）、Ｒ８は炭素原子数２〜４のアルキレン基であり、Ｚは炭素原子数２〜４のアルケニル基若しくはアルキニル基であり、ａは２〜７の数であり、ｂは１〜７の数であり、ｂを繰り返し数とする重合部分と、ａ−ｂを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。ｅは０〜３の数である。ｃ及びｄは、ｄ：ｃ＝１：１〜１：１００且つ全てのｃと全てのｄとの合計が１５以上となる数であって、且つ一般式（１）で表される珪素含有化合物の質量平均分子量を３０００〜１００万とする数である。また、ｃを繰り返し数とする重合部分と、ｄを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。）
珪素含有重合体(Ｂ)成分：下記一般式（２）で表される珪素含有化合物。
Figure 2011222869
 （式中、Ｒ９〜Ｒ１５は、同一でも異なっていてもよく、炭素原子数１〜１２の飽和脂肪族炭化水素基、又は、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基であり（但し、Ｒ１３及びＲ１４は同時に炭素原子数１〜１２の飽和脂肪族炭化水素基となることはない）、Ｒ１６は炭素原子数２〜４のアルキレン基であり、ｆは２〜７の数であり、ｇは１〜７の数であり、ｇを繰り返し数とする重合部分と、ｆ−ｇを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。ｊは０〜３の数である。ｈ及びｉは、ｉ：ｈ＝１：１〜１：１００且つ全てのｈと全てのｉとの合計が１５以上となる数であって、且つ一般式（２）で表される珪素含有化合物の質量平均分子量を３０００〜１００万とする数である。また、ｈを繰り返し数とする重合部分と、ｉを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。）
また、上記第２の被覆部１６をなす第２の珪素含有硬化性組成物が含有するセラミックス粒子の粒径は１〜５０μｍが好ましく、５〜２５μｍがより好ましい。また、上記第２の珪素含有硬化性組成物に占めるセラミックス粒子の体積充填率は４０〜７０％であるのが好ましく、５０〜６０％がより好ましい。これにより、上記第２の珪素含有硬化性組成物を硬化させてなる硬化物の線膨張係数を５０〜２００ｐｐｍ/℃、より好ましくは１００〜１５０ｐｐｍ/℃にすることができる。なお、上記第２の被覆部１６をなす第２の珪素含有硬化性組成物を硬化させてなる硬化物の線膨張係数を５０ｐｐｍ/℃より小さくすると、第１の被覆部１５との密着性が悪くなり、絶縁材として作用しなくなる。一方、上記第２の被覆部１６をなす第２の珪素含有硬化性組成物を硬化させてなる硬化物の線膨張係数を２００ｐｐｍ/℃より大きくすると、半導体装置を保護できる程度の硬度が得られない。 Silicon-containing polymer (A) component: The following (A) component: A silicon-containing compound represented by the following general formula (1).
Figure 2011222869
 (In the formula, R 1 to R 7 may be the same or different and may be substituted with a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms or a saturated aliphatic hydrocarbon group. An aromatic hydrocarbon group of 6 to 12 (provided that R 5 and R 6 cannot simultaneously become a saturated aliphatic hydrocarbon group of 1 to 12 carbon atoms), and R 8 has 2 to 2 carbon atoms. 4 is an alkylene group, Z is an alkenyl group or alkynyl group having 2 to 4 carbon atoms, a is a number from 2 to 7, b is a number from 1 to 7, and b is a repeating number. The polymerization portion and the polymerization portion having ab as the number of repetitions may be in the form of blocks or random, e is a number from 0 to 3. c and d are d: c = 1: 1 to 1: 100 and the sum of all c and all d is 15 or more, and in general The silicon-containing compound represented by (1) is a number having a mass average molecular weight of 3000 to 1,000,000, and a polymerization part having c as the number of repetitions and a polymerization part having d as the number of repetitions are block-like. Or random.)
Silicon-containing polymer (B) component: A silicon-containing compound represented by the following general formula (2).
Figure 2011222869
 (In formula, R < 9 > -R < 15 > may be same or different, The carbon atom which may be substituted by the C1-C12 saturated aliphatic hydrocarbon group or a saturated aliphatic hydrocarbon group. An aromatic hydrocarbon group having a number of 6 to 12 (provided that R 13 and R 14 do not simultaneously become a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms), and R 16 has 2 to 2 carbon atoms. 4 is an alkylene group, f is a number from 2 to 7, g is a number from 1 to 7, and a polymer moiety having g as a repeat number and a polymer moiety having f-g as a repeat number are: It may be block or random, j is a number from 0 to 3. h and i are i: h = 1: 1 to 1: 100 and all h and all i. The number average molecular weight of the silicon-containing compound represented by the general formula (2) is 30 and the total is 15 or more. It is a number 0 to 100 to 250,000. Also, the overlapping portion of the number of repeated h, and the overlapping portion of the number of repeated i, be a block form or a random form.)
Moreover, 1-50 micrometers is preferable and, as for the particle size of the ceramic particle which the 2nd silicon-containing curable composition which comprises the said 2nd coating part 16 contains, 5-25 micrometers is more preferable. Moreover, it is preferable that the volume filling rate of the ceramic particle which occupies for said 2nd silicon containing curable composition is 40 to 70%, and 50 to 60% is more preferable. Thereby, the linear expansion coefficient of the hardened | cured material formed by hardening | curing the said 2nd silicon containing curable composition can be 50-200 ppm / degreeC, More preferably, it can be 100-150 ppm / degreeC. In addition, when the linear expansion coefficient of the hardened | cured material which hardens the 2nd silicon-containing curable composition which comprises the said 2nd coating part 16 is made smaller than 50 ppm / degrees C, the adhesiveness with the 1st coating part 15 will be sufficient. It becomes worse and does not act as an insulating material. On the other hand, when the linear expansion coefficient of the cured product obtained by curing the second silicon-containing curable composition forming the second covering portion 16 is greater than 200 ppm / ° C., a hardness that can protect the semiconductor device is obtained. Absent.

また、上記第２の被覆部１６をなす第２の珪素含有硬化性組成物は絶縁性セラミックス微粒子を含有することで、上記第２の珪素含有硬化性組成物のガスバリア性が向上する。すなわち、上記第２の珪素含有硬化性組成物は酸化劣化しにくくなる。   In addition, the second silicon-containing curable composition forming the second covering portion 16 contains insulating ceramic fine particles, whereby the gas barrier property of the second silicon-containing curable composition is improved. That is, the second silicon-containing curable composition is less susceptible to oxidative degradation.

また、上記一般式(１),(２)に置いて、Ｒ１〜Ｒ７,Ｒ９〜Ｒ１５で表される炭素原子数１〜１２の飽和脂肪族炭化水素基の一例としては、メチル、エチル、プロピル、イソプロピル、ブチル、第２ブチル、第３ブチル、イソブチル、アミル、イソアミル、第３アミル、ヘキシル、２−ヘキシル、３−ヘキシル、シクロヘキシル、１−メチルシクロヘキシル、ヘプチル、２−ヘプチル、３−ヘプチル、イソヘプチル、第３ヘプチル、ｎ−オクチル、イソオクチル、第３オクチル、２−エチルヘキシル、ノニル、イソノニル、デシル、ドデシル等が挙げられる。 Moreover, as an example of a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms represented by R 1 to R 7 and R 9 to R 15 in the general formulas (1) and (2), methyl , Ethyl, propyl, isopropyl, butyl, sec-butyl, tert-butyl, isobutyl, amyl, isoamyl, tert-amyl, hexyl, 2-hexyl, 3-hexyl, cyclohexyl, 1-methylcyclohexyl, heptyl, 2-heptyl, Examples include 3-heptyl, isoheptyl, tertiary heptyl, n-octyl, isooctyl, tertiary octyl, 2-ethylhexyl, nonyl, isononyl, decyl, dodecyl and the like.

また、上記一般式(１),(２)に置いて、Ｒ５,Ｒ１３で表される飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基は、置換基である飽和脂肪族炭化水素基も含めた全体で炭素原子数が６〜１２である。置換基である飽和脂肪族炭化水素基としては、例えば、上に例示した飽和脂肪族炭化水素基のうち、上記炭素原子数を満たすことができるものを採用することができ、一例として、フェニル、ナフチル、２−メチルフェニル、３−メチルフェニル、４−メチルフェニル、３−イソプロピルフェニル、４−イソプロピルフェニル、４−ブチルフェニル、４−イソブチルフェニル、４−第３ブチルフェニル、４−ヘキシルフェニル、４−シクロヘキシルフェニル、２，３−ジメチルフェニル、２，４−ジメチルフェニル、２，５−ジメチルフェニル、２，６−ジメチルフェニル、３，４−ジメチルフェニル、３，５−ジメチルフェニル、シクロヘキシルフェニル、ビフェニル、２，４，５−トリメチルフェニル等が挙げられる。 In addition, in the general formulas (1) and (2), an aromatic hydrocarbon group having 6 to 12 carbon atoms which may be substituted with a saturated aliphatic hydrocarbon group represented by R 5 or R 13 Has 6 to 12 carbon atoms as a whole, including a saturated aliphatic hydrocarbon group as a substituent. As the saturated aliphatic hydrocarbon group which is a substituent, for example, among the saturated aliphatic hydrocarbon groups exemplified above, those capable of satisfying the above-mentioned number of carbon atoms can be adopted. As an example, phenyl, Naphthyl, 2-methylphenyl, 3-methylphenyl, 4-methylphenyl, 3-isopropylphenyl, 4-isopropylphenyl, 4-butylphenyl, 4-isobutylphenyl, 4-tert-butylphenyl, 4-hexylphenyl, 4 -Cyclohexylphenyl, 2,3-dimethylphenyl, 2,4-dimethylphenyl, 2,5-dimethylphenyl, 2,6-dimethylphenyl, 3,4-dimethylphenyl, 3,5-dimethylphenyl, cyclohexylphenyl, biphenyl 2,4,5-trimethylphenyl and the like.

また、上記一般式(１),(２)に置いて、Ｒ８,Ｒ１６で表される炭素原子数２〜４のアルキレン基としては、一例として、−ＣＨ２ＣＨ２−、−ＣＨ２ＣＨ２ＣＨ２−、−ＣＨ２ＣＨ２ＣＨ２ＣＨ２−、−ＣＨ（ＣＨ３）ＣＨ２−、−ＣＨ２ＣＨ（ＣＨ３）−等が挙げられる。 Moreover, as an alkylene group having 2 to 4 carbon atoms represented by R 8 and R 16 in the above general formulas (1) and (2), for example, —CH 2 CH 2 —, —CH 2 CH 2 CH 2 —, —CH 2 CH 2 CH 2 CH 2 —, —CH (CH 3 ) CH 2 —, —CH 2 CH (CH 3 ) — and the like can be mentioned.

また、上記一般式(１),(２)に置いて、Ｚ,Ｈで表される炭素原子数２〜４のアルケニル基としては、一例として、ＣＨ２＝ＣＨ−、ＣＨ２＝ＣＨ−ＣＨ２−、ＣＨ２＝ＣＨ−ＣＨ２−ＣＨ２−、ＣＨ２＝Ｃ（ＣＨ３）−、ＣＨ２＝Ｃ（ＣＨ３）−ＣＨ２−、ＣＨ２＝ＣＨ−ＣＨ（ＣＨ３）−等が挙げられる。 In addition, as an example of the alkenyl group having 2 to 4 carbon atoms represented by Z and H in the general formulas (1) and (2), CH 2 = CH-, CH 2 = CH-CH 2 -, CH 2 = CH- CH 2 -CH 2 -, CH 2 = C (CH 3) -, CH 2 = C (CH 3) -CH 2 -, CH 2 = CH-CH (CH 3) - , etc. Is mentioned.

また、上記一般式(１),(２)に置いて、Ｚ,Ｈで表される炭素原子数２〜４のアルキニル基としては、一例として、下記の基が挙げられる。

Figure 2011222869
上記一般式(１)，(２)中のＲ１〜Ｒ７，Ｒ９〜Ｒ１５において、炭素原子数１〜１２の飽和脂肪族炭化水素基の割合を大きくすると、得られる硬化物の可撓性が向上し、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基の割合を大きくすると、得られる硬化物の耐熱性及び硬度が向上する。該飽和脂肪族炭化水素基と該芳香族炭化水素の割合は、硬化物に求められる物性により任意に設定することができる。好ましい割合（数）は、該飽和脂肪族炭化水素基：該芳香族炭化水素が１００：１〜１：２であり、２０：１〜１：１がより好ましい。また、炭素原子数１〜１２の飽和脂肪族炭化水素基としては、耐熱性が良好であるのでメチル基が好ましく、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基としては、耐熱性が良好であるのでフェニル基が好ましい。 Examples of the alkynyl group having 2 to 4 carbon atoms represented by Z and H in the general formulas (1) and (2) include the following groups.
Figure 2011222869
 In R 1 to R 7 and R 9 to R 15 in the general formulas (1) and (2), when the ratio of the saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms is increased, the resulting cured product can be obtained. Flexibility is improved, and when the proportion of the aromatic hydrocarbon group having 6 to 12 carbon atoms which may be substituted with a saturated aliphatic hydrocarbon group is increased, the heat resistance and hardness of the obtained cured product are improved. The ratio of the saturated aliphatic hydrocarbon group and the aromatic hydrocarbon can be arbitrarily set depending on the physical properties required for the cured product. A preferable ratio (number) of the saturated aliphatic hydrocarbon group: the aromatic hydrocarbon is 100: 1 to 1: 2, and 20: 1 to 1: 1 is more preferable. The saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms is preferably a methyl group because of good heat resistance, and has 6 to 12 carbon atoms which may be substituted with a saturated aliphatic hydrocarbon group. As the aromatic hydrocarbon group, a phenyl group is preferred because of good heat resistance.

上記一般式(１),(２)に置いて、Ｒ３,Ｒ１１及びＲ４,Ｒ１２が、炭素原子数１〜１２の飽和脂肪族炭化水素基、特にメチル基であり、Ｒ５,Ｒ１３及びＲ６,Ｒ１４の少なくとも一方が、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数１〜１２の芳香族炭化水素基、特にフェニル基であるものが好ましい。 In the general formulas (1) and (2), R 3 , R 11 and R 4 , R 12 are a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms, particularly a methyl group, and R 5 , It is preferable that at least one of R 13 and R 6 , R 14 is an aromatic hydrocarbon group having 1 to 12 carbon atoms which may be substituted with a saturated aliphatic hydrocarbon group, particularly a phenyl group.

本発明のケイ素含有化合物の質量平均分子量は、３０００〜１００万である。３０００より小さいと得られる硬化物の耐熱性が不充分となり、１００万より大きいと粘度が大きくなりハンドリングに支障をきたす。質量平均分子量は、５０００〜５０万が好ましく、１万〜１０万がより好ましい。   The mass average molecular weight of the silicon-containing compound of the present invention is 3,000 to 1,000,000. If it is less than 3000, the resulting cured product has insufficient heat resistance, and if it is greater than 1 million, the viscosity increases and hinders handling. The mass average molecular weight is preferably 5,000 to 500,000, and more preferably 10,000 to 100,000.

本発明のケイ素含有化合物は、その製造方法により、特に制限されることはなく、周知の反応を応用して製造することができる。
尚、上記第１の被覆部１５を作製する第１の樹脂および上記第２の被覆部１６を作製する樹脂としては、線膨張係数が５００ｐｐｍ以下であると共にＪＩＳ規格の規格番号ＪＩＳ Ｃ ４００３による耐熱性クラスがＦ以上であるものを採用してもよい。なお、上記線膨張係数係数の下限値は、一例として、５ｐｐｍであるが５ｐｐｍ以下、例えば３ｐｐｍでも良い。例えば、このような第１,第２の樹脂の一例としてはセラミック粒子を含有した有機珪素化合物が挙げられ、この場合、上記第２の樹脂のセラミック粒子の含有重量％を上記第１の樹脂のセラミック粒子の含有重量％よりも高くすることで、上記第２の樹脂の硬度を上記第１の樹脂の硬度よりも大きくすることができる。 The silicon-containing compound of the present invention is not particularly limited by the production method, and can be produced by applying a known reaction.
The first resin for forming the first covering portion 15 and the resin for forming the second covering portion 16 have a linear expansion coefficient of 500 ppm or less and heat resistance according to JIS standard number JIS C 4003. You may employ | adopt the thing whose sex class is F or more. The lower limit value of the linear expansion coefficient coefficient is 5 ppm as an example, but may be 5 ppm or less, for example, 3 ppm. For example, an example of such first and second resins is an organosilicon compound containing ceramic particles. In this case, the content percentage by weight of the ceramic particles of the second resin is the same as that of the first resin. By making it higher than the content% by weight of the ceramic particles, the hardness of the second resin can be made larger than the hardness of the first resin.

（第２の実施の形態）
次に、この発明の半導体装置の第２実施形態を説明する。この第２実施形態は、前述の第１実施形態における第１の被覆部１５および第２の被覆部１６を形成する珪素含有硬化性組成物の組成が、前述の第１実施形態と異なる。よって、この第２実施形態では、前述の第１実施形態と異なる点を説明する。 (Second Embodiment)
Next, a second embodiment of the semiconductor device of the present invention will be described. This 2nd Embodiment differs in the composition of the silicon-containing curable composition which forms the 1st coating | coated part 15 and the 2nd coating | coated part 16 in above-mentioned 1st Embodiment from the above-mentioned 1st Embodiment. Therefore, in the second embodiment, points different from the first embodiment will be described.

この第２実施形態では、第１の被覆部１５を前述の第１の珪素含有硬化性組成物に替えて第３の珪素含有硬化性組成物で形成した。この第３の有硬化性祖成物は次に説明する合成工程６によって合成した。なお、この合成工程６において「部」とは重量部を表す。上記第３の珪素含有硬化性組成物を２５０℃にて３時間硬化反応させることにより第１の被覆部１５が得られる。   In the second embodiment, the first covering portion 15 is formed of the third silicon-containing curable composition instead of the first silicon-containing curable composition. This third curable genus was synthesized by the synthesis step 6 described below. In this synthesis step 6, “parts” represents parts by weight. The 1st coating | coated part 15 is obtained by making the said 3rd silicon-containing curable composition carry out hardening reaction at 250 degreeC for 3 hours.

さらに、この第２実施形態では、第１の被覆部１５の全表面１５Ａを覆うと共に支持体３の嵌合溝２１に端部２３が密に嵌合する第２の被覆部１６が第４の珪素含有硬化性組成物で作製されている。この第２の被覆部１６として使用される第４の珪素含有硬化性組成物は上記第３の珪素含有硬化性組成物にセラミックス粒子として粒径２０μｍのアルミナ微粒子を４０％の体積充填率で配合している。この第４の珪素含有硬化性組成物を２００℃にて６時間硬化反応させることにより第２の被覆部１６が得られる。また、上記第４の珪素含有硬化性組成物の線膨張係数は１８０ｐｐｍ/℃である。   Further, in the second embodiment, the second covering portion 16 that covers the entire surface 15A of the first covering portion 15 and whose end portion 23 closely fits in the fitting groove 21 of the support 3 is the fourth covering portion. It is made of a silicon-containing curable composition. The fourth silicon-containing curable composition used as the second covering portion 16 is compounded with the third silicon-containing curable composition with alumina fine particles having a particle diameter of 20 μm as ceramic particles at a volume filling rate of 40%. is doing. The second covering portion 16 is obtained by allowing the fourth silicon-containing curable composition to undergo a curing reaction at 200 ° C. for 6 hours. The linear expansion coefficient of the fourth silicon-containing curable composition is 180 ppm / ° C.

〔合成工程６〕 （Ａ）成分として上記合成工程２で得られた珪素含有化合物（ＶＳｉ−１）５０部と（Ｂ）成分として上記合成工程４で得られた珪素含有化合物（ＨＳｉ−２）５０部とを混合したものに、（Ｄ）成分として白金系触媒である白金−カルボニルビニルメチル錯体０．０１部、および鉄（ＩＩＩ）アセチルアセトネート０．０１部を混合して、上記第３の珪素含有硬化性組成物を得た。   [Synthesis Step 6] 50 parts of silicon-containing compound (VSi-1) obtained in Synthesis Step 2 as component (A) and silicon-containing compound (HSi-2) obtained in Synthesis Step 4 as component (B) 50 parts is mixed with 0.01 parts of platinum-carbonylvinylmethyl complex which is a platinum-based catalyst as component (D) and 0.01 parts of iron (III) acetylacetonate. A silicon-containing curable composition was obtained.

この第２実施形態によれば、第２の被覆部１６となる第２の樹脂としての第４の珪素含有硬化性組成物は第１の樹脂としての上記第３の珪素含有硬化性組成物にセラミックスとしての粒径２０μｍのアルミナ微粒子を４０％の体積充填率で配合している。そして、この第４の珪素含有硬化性組成物を２００℃にて６時間硬化反応させることにより第２の被覆部１６とした。上記硬化後の第４の珪素含有硬化性組成物の線膨張係数は１８０ｐｐｍ/℃である。この第２実施形態によれば、上記第２の被覆部１６は高温(例えば２００℃以上)で使用してもクラック等が発生せず、高絶縁耐力を達成できる。   According to this 2nd Embodiment, the 4th silicon-containing curable composition as 2nd resin used as the 2nd coating | coated part 16 is changed into the said 3rd silicon-containing curable composition as 1st resin. Alumina fine particles having a particle diameter of 20 μm as ceramics are blended at a volume filling rate of 40%. Then, the fourth silicon-containing curable composition was subjected to a curing reaction at 200 ° C. for 6 hours to obtain the second covering portion 16. The fourth silicon-containing curable composition after curing has a linear expansion coefficient of 180 ppm / ° C. According to the second embodiment, the second covering portion 16 does not generate cracks even when used at a high temperature (for example, 200 ° C. or higher), and can achieve high dielectric strength.

また、上記第２の被覆部１６の端部２３が、上記支持体３の嵌合溝２１に密に嵌合している。上記支持体３の嵌合溝２１に上記第２の樹脂としての第２の珪素含有硬化性が流し込まれることで密に嵌合した第２の被覆部１６の環状の端部２３が支持体３に対するアンカーとしての機能を果たす。これにより、支持体３との線膨張係数の差がかなりある第２の被覆部１６が高温時(例えば２００℃以上)に支持体３から剥離するのを抑制できる。また、上記第２の被覆部１６の段差部２５が上記支持体３の環状の突起２２に外周側から嵌合しているので、第２の被覆部１６の端部２３を支持体３の環状の嵌合溝２１から外れにくくでき、上記アンカーの機能を強化できる。   Further, the end 23 of the second covering portion 16 is closely fitted in the fitting groove 21 of the support 3. The annular end portion 23 of the second covering portion 16 closely fitted by the second silicon-containing curability as the second resin being poured into the fitting groove 21 of the support 3 is the support 3. Acts as an anchor for Thereby, it can suppress that the 2nd coating | coated part 16 with a considerable difference of a linear expansion coefficient with the support body 3 peels from the support body 3 at the time of high temperature (for example, 200 degreeC or more). Further, since the step portion 25 of the second covering portion 16 is fitted to the annular protrusion 22 of the support body 3 from the outer peripheral side, the end portion 23 of the second covering portion 16 is connected to the annular shape of the support body 3. It is difficult to come off from the fitting groove 21 and the function of the anchor can be enhanced.

また、上記第２の被覆部１６の膨張時には上記第２の被覆部１６の端部２３が外周側に向けて上記支持体３の嵌合溝２１の外周面に押しつけられ、上記第２の被覆部１６の収縮時には上記第２の被覆部１６の端部２３が内周側に向けて上記嵌合溝２１の内周面に押しつけられる。よって、第２の被覆部１６の膨張と収縮により、第２の被覆部１６と支持体３との間に隙間が発生することを抑制できて、上記嵌合溝２１から内部への空気の侵入を抑制できる。   Further, when the second covering portion 16 is expanded, the end portion 23 of the second covering portion 16 is pressed against the outer peripheral surface of the fitting groove 21 of the support body 3 toward the outer peripheral side, and the second covering portion 16 is pressed. When the portion 16 contracts, the end portion 23 of the second covering portion 16 is pressed against the inner peripheral surface of the fitting groove 21 toward the inner peripheral side. Therefore, it is possible to suppress the occurrence of a gap between the second covering portion 16 and the support 3 due to the expansion and contraction of the second covering portion 16, and the intrusion of air from the fitting groove 21 to the inside. Can be suppressed.

また、第１の被覆部１５が支持体３と第２の被覆部１６との間で緩衝材として働き、高温時の応力を低減できる。   Moreover, the 1st coating | coated part 15 works as a buffer material between the support body 3 and the 2nd coating | coated part 16, and can reduce the stress at the time of high temperature.

尚、上記第１,第２実施形態において、上記第１の被覆部１５に表面が被覆されていると共に上記ＧＴＯサイリスタ素子１を直接被覆する下塗り部となる第３の被覆部(図示せず)と、上記第２の被覆部１６に表面が被覆されていると共に上記第１の被覆部１５を直接被覆する下塗り部となる第４の被覆部(図示せず)とを備えてもよい。ここで、上記第３の被覆部(図示せず)および第４の被覆部(図示せず)を作製する珪素含有硬化性組成物は、上記の（Ａ）成分、（Ｂ）成分、（Ｄ）成分および（Ｆ）成分を含有する珪素含有硬化性組成物である。そして、上記第３および第４の被覆部を作製する珪素含有硬化性組成物の成分の内の上記(Ｆ)成分の含有重量％が上記第１および第２の被覆部１５,１６を作製する珪素含有硬化性組成物の成分の内の上記(Ｆ)成分の含有重量％よりも低い。つまり、上記第３,第４の被覆部を作製する珪素含有硬化性組成物の成分は、上記(Ｆ)成分以外は、上記第１の被覆部１５を作製する珪素含有硬化性組成物の成分と同様である。これにより、下塗り部となる上記第３,第４の被覆部(図示せず)の粘度と接着力を、上記第１,第２の被覆部１５,１６の粘度と接着力に比べて高くすることができる。なお、上記第３,第４の被覆部の(Ｆ)成分の含有重量％を、５％以下にすることが望ましい。また、上記第３,第４の被覆部の(Ｆ)成分の含有重量％を略零％とすることがより好ましい。   In the first and second embodiments, a third covering portion (not shown) which is the surface of the first covering portion 15 and serves as an undercoat portion which directly covers the GTO thyristor element 1. And a fourth covering portion (not shown) serving as an undercoat portion that covers the surface of the second covering portion 16 and directly covers the first covering portion 15. Here, the silicon-containing curable composition for producing the third covering portion (not shown) and the fourth covering portion (not shown) is composed of the components (A), (B), (D ) Component and (F) component containing a silicon-containing curable composition. And the content weight% of the said (F) component of the components of the silicon containing curable composition which produces the said 3rd and 4th coating part produces the said 1st and 2nd coating parts 15 and 16. It is lower than the content by weight of the component (F) in the components of the silicon-containing curable composition. That is, the components of the silicon-containing curable composition for producing the third and fourth coating portions are the components of the silicon-containing curable composition for producing the first coating portion 15 except for the component (F). It is the same. As a result, the viscosity and adhesive strength of the third and fourth covering portions (not shown), which are the undercoat portions, are made higher than the viscosity and adhesive strength of the first and second covering portions 15 and 16. be able to. In addition, it is desirable that the content weight% of the component (F) in the third and fourth covering portions is 5% or less. Further, it is more preferable that the content% by weight of the component (F) in the third and fourth covering portions is substantially zero%.

また、上記第１の被覆部１５の厚さを０.１ｍｍ以上かつ１０ｍｍ以下とし、上記第２の被覆部１６の厚さを５ｍｍ以上かつ３０ｍｍ以下とし、上記第３および第４の被覆部の厚さを０.０１ｍｍ以上かつ５ｍｍ以下とすることが好ましい。また、上記実施形態では、支持体３を銅製としたが、銅の他にアルミニウムのような金属、または、Ａｌ‐ＳｉＣのような金属と半導体の複合材料、または、銅とモリブデン等の異種金属の積層構造材料で作製してもよい。また、上記支持体の表面を金またはニッケル、錫、亜鉛、クロム等でメッキしてもよい。   Further, the thickness of the first covering portion 15 is set to 0.1 mm or more and 10 mm or less, the thickness of the second covering portion 16 is set to 5 mm or more and 30 mm or less, and the third and fourth covering portions are formed. The thickness is preferably 0.01 mm or more and 5 mm or less. In the above embodiment, the support 3 is made of copper. However, in addition to copper, a metal such as aluminum, a metal-semiconductor composite material such as Al-SiC, or a dissimilar metal such as copper and molybdenum. You may produce with the laminated structure material of. Further, the surface of the support may be plated with gold, nickel, tin, zinc, chromium, or the like.

(第３の実施の形態)
次に、図２に、この発明の半導体装置の第３実施形態を示す。この第３実施形態は、図１のＳｉＣ ＧＴＯサイリスタ素子１に替えてＳｉＣ ＧＴＯサイリスタ素子２１を有する点と、支持体３に替えて、銅,アルミニウムのような金属材料もしくはＡｌ‐ＳｉＣのような複合材料もしくは銅とモリブデン等の異種金属の積層構造材料で作製された支持体３３および上記支持体３３の上面３３Ａ上に設置されてＳｉＣ ＧＴＯサイリスタ素子３１が載置されたセラミック絶縁基板３５を有する点が、前述の第１実施形態と異なる。よって、この第３実施形態では、前述の第１実施形態と異なる部分を主に説明する。 (Third embodiment)
Next, FIG. 2 shows a third embodiment of the semiconductor device of the present invention. This third embodiment has a SiC GTO thyristor element 21 instead of the SiC GTO thyristor element 1 of FIG. 1, and a metal material such as copper or aluminum or Al-SiC instead of the support 3. A support 33 made of a composite material or a laminated structure material of dissimilar metals such as copper and molybdenum, and a ceramic insulating substrate 35 placed on the upper surface 33A of the support 33 and on which the SiC GTO thyristor element 31 is placed. This is different from the first embodiment described above. Therefore, in the third embodiment, parts different from the first embodiment will be mainly described.

この第３実施形態が有するＧＴＯサイリスタ素子３１は、アノード電極３２がアルミニウム,金,銅等で作製されるリード線７によりアノード端子１０の上端に接続され、カソード電極３７がセラミック絶縁基板３５上に配置されている。また、ＧＴＯサイリスタ素子３１のゲート電極３６は、アルミニウム,金,銅等で作製されるリード線８によりゲート端子１１の上端に接続されている。すなわち、この第３実施形態は、ＧＴＯサイリスタ素子３１がカソード電極３７を有し、支持体３に替えてセラミック絶縁基板３５と支持体３３を備え、ＳｉＣ ＧＴＯサイリスタ素子３１の下にセラミック絶縁基板３５を敷いてＧＴＯサイリスタ素子３１のカソード電極３７を支持体３３と絶縁した構造とした点が、先述の第１実施形態と異なっている。   In the GTO thyristor element 31 of the third embodiment, the anode electrode 32 is connected to the upper end of the anode terminal 10 by a lead wire 7 made of aluminum, gold, copper or the like, and the cathode electrode 37 is placed on the ceramic insulating substrate 35. Has been placed. The gate electrode 36 of the GTO thyristor element 31 is connected to the upper end of the gate terminal 11 by a lead wire 8 made of aluminum, gold, copper or the like. That is, in this third embodiment, the GTO thyristor element 31 has a cathode electrode 37, and is provided with a ceramic insulating substrate 35 and a supporting body 33 instead of the supporting body 3, and the ceramic insulating substrate 35 is provided under the SiC GTO thyristor element 31. Is different from the first embodiment described above in that the cathode electrode 37 of the GTO thyristor element 31 is insulated from the support 33.

尚、この第３実施形態において、図３に示すように、上記第１の被覆部１５に表面４１Ａが被覆されていると共に上記ＧＴＯサイリスタ素子３１を直接被覆する第３の被覆部４１と、上記第２の被覆部１６に表面４２Ａが被覆されていると共に上記第１の被覆部１５を直接被覆する第４の被覆部４２とを備えてもよい。上記第３の被覆部４１は、素子被覆部(第１の被覆部１５)の下塗りとなり、上記第４の被覆部４２は、モールド部(第２の被覆部１６)の下塗りとなる。なお、図３に示す一例では、第３の被覆部４１はＧＴＯサイリスタ素子３１だけでなく支持体３３上に突出したアノード端子１０,ゲート端子１１も覆っている。   In the third embodiment, as shown in FIG. 3, the first covering portion 15 is covered with a surface 41A and directly covers the GTO thyristor element 31. The second covering portion 16 may be provided with a surface 42A and a fourth covering portion 42 that directly covers the first covering portion 15. The third covering portion 41 is an undercoat of the element covering portion (first covering portion 15), and the fourth covering portion 42 is an undercoat of the mold portion (second covering portion 16). In the example shown in FIG. 3, the third covering portion 41 covers not only the GTO thyristor element 31 but also the anode terminal 10 and the gate terminal 11 protruding on the support 33.

ここで、上記第３の被覆部４１および第４の被覆部４２を作製する珪素含有硬化性組成物は、上記の（Ａ）成分、（Ｂ）成分、（Ｄ）成分および（Ｆ）成分を含有する珪素含有硬化性組成物である。そして、上記第３および第４の被覆部４１,４２を作製する珪素含有硬化性組成物の成分の内の上記(Ｆ)成分の含有重量％が上記第１および第２の被覆部１５,１６を作製する珪素含有硬化性組成物の成分の内の上記(Ｆ)成分の含有重量％よりも低い。つまり、上記第３,第４の被覆部４１,４２を作製する珪素含有硬化性組成物の成分は、上記(Ｆ)成分以外は、上記第１の被覆部１５を作製する珪素含有硬化性組成物の成分と同様である。これにより、上記第３,第４の被覆部４１,４２の粘度と接着力を、上記第１,第２の被覆部１５,１６の粘度と接着力に比べて高くすることができる。また、上記第３,第４の被覆部４１,４２の(Ｆ)成分の含有重量％を、５％以下にすることが望ましい。また、上記第３,第４の被覆部４１,４２の(Ｆ)成分の含有重量％を約０％とすることがより好ましい。   Here, the silicon-containing curable composition for producing the third covering portion 41 and the fourth covering portion 42 includes the above components (A), (B), (D) and (F). It is a silicon-containing curable composition to contain. Of the components of the silicon-containing curable composition for producing the third and fourth covering portions 41 and 42, the content weight percentage of the component (F) is the first and second covering portions 15 and 16. The content is lower than the content% by weight of the component (F) among the components of the silicon-containing curable composition. That is, the components of the silicon-containing curable composition for producing the third and fourth coating portions 41 and 42 are the silicon-containing curable composition for producing the first coating portion 15 except for the component (F). It is the same as the component of a thing. Thereby, the viscosity and adhesive force of the third and fourth covering portions 41 and 42 can be made higher than the viscosity and adhesive force of the first and second covering portions 15 and 16. Moreover, it is desirable that the content weight percentage of the component (F) in the third and fourth covering portions 41 and 42 is 5% or less. Further, it is more preferable that the content weight% of the component (F) in the third and fourth covering portions 41 and 42 is about 0%.

また、上記第１の被覆部１５の厚さを０.１ｍｍ以上かつ１０ｍｍ以下とし、上記第２の被覆部１６の厚さを５ｍｍ以上かつ３０ｍｍ以下とし、上記第３,第４の被覆部４１,４２の厚さを０.０１ｍｍ以上かつ５ｍｍ以下とすることが好ましい。また、図３では、第３の被覆部４１は、ＧＴＯサイリスタ素子３１だけでなく支持体３３上に突出したアノード端子１０,ゲート端子１１も覆っているがＧＴＯサイリスタ素子３１とその周辺部だけを覆ってもよいし、第３の被覆部４１を支持体２３の縁に向かって広く塗って第１の被覆部１５の端まで延在させてもよい。なお、上記セラミック絶縁基板３５は、一例として酸化アルミニウム,窒化アルミニウム,窒化ケイ素等で作製される。また、支持体３３の表面に金またはニッケル、錫、亜鉛、クロム等によるメッキを施してもよい。   Further, the thickness of the first covering portion 15 is set to 0.1 mm to 10 mm, the thickness of the second covering portion 16 is set to 5 mm to 30 mm, and the third and fourth covering portions 41 are arranged. , 42 is preferably 0.01 mm or more and 5 mm or less. In FIG. 3, the third covering portion 41 covers not only the GTO thyristor element 31 but also the anode terminal 10 and the gate terminal 11 protruding on the support 33, but only the GTO thyristor element 31 and its peripheral portion. The third covering portion 41 may be applied widely toward the edge of the support 23 and may extend to the end of the first covering portion 15. The ceramic insulating substrate 35 is made of aluminum oxide, aluminum nitride, silicon nitride or the like as an example. Further, the surface of the support 33 may be plated with gold, nickel, tin, zinc, chromium or the like.

（第４の実施の形態）
次に、図４に、この発明の半導体装置の第４実施形態を説明する。この第４実施形態は、耐圧５ｋＶのＳｉＣ ＧＴＯサイリスタ素子５１を有し、このＳｉＣ サイリスタ素子５１は、カソード電極５９がセラミック絶縁基板５２の上面５２Ａに配置されるように載置されている。このセラミック絶縁基板５２は支持体５３上に配置されている。このセラミック絶縁基板５２は、一例として酸化アルミニウム,窒化アルミニウム,窒化ケイ素等で作製される。また、上記支持体５３は、銅,アルミニウムのような金属材料もしくはＡｌ‐ＳｉＣのような複合材料もしくは銅とモリブデン等の異種金属の積層構造材料で作製されている。また、支持体５３の表面に金またはニッケル、錫、亜鉛、クロム等によるメッキを施してもよい。 (Fourth embodiment)
Next, FIG. 4 illustrates a semiconductor device according to a fourth embodiment of the present invention. The fourth embodiment includes a SiC GTO thyristor element 51 having a withstand voltage of 5 kV, and the SiC thyristor element 51 is mounted such that the cathode electrode 59 is disposed on the upper surface 52A of the ceramic insulating substrate 52. This ceramic insulating substrate 52 is disposed on a support 53. As an example, the ceramic insulating substrate 52 is made of aluminum oxide, aluminum nitride, silicon nitride, or the like. The support 53 is made of a metal material such as copper or aluminum, a composite material such as Al-SiC, or a laminated structure material of different metals such as copper and molybdenum. Further, the surface of the support 53 may be plated with gold, nickel, tin, zinc, chromium or the like.

このＳｉＣ ＧＴＯサイリスタ素子５１のアノード電極５５はアルミニウム,金,銅等で作製されるリード線５６により電極５７に接続されている。また、ＧＴＯサイリスタ素子５１のゲート電極５４は、アルミニウム,金,銅等で作製されるリード線５８により電極６０に接続されている。また、上記電極６０には電極６０上に延在するゲート端子６１が接続され、上記電極５７には電極５７上に延在するアノード端子６２が接続されている。   The anode electrode 55 of the SiC GTO thyristor element 51 is connected to the electrode 57 by a lead wire 56 made of aluminum, gold, copper or the like. The gate electrode 54 of the GTO thyristor element 51 is connected to the electrode 60 by a lead wire 58 made of aluminum, gold, copper or the like. A gate terminal 61 extending on the electrode 60 is connected to the electrode 60, and an anode terminal 62 extending on the electrode 57 is connected to the electrode 57.

そして、上記ＳｉＣ ＧＴＯサイリスタ素子５１の全表面、およびリード線５６,５８と電極５７,６０、および電極５７,６０上の端子６１,６２の一部分を覆うように、第１の被覆部である被覆部６３となる第１の樹脂(一例として、上記第１の珪素含有硬化性組成物)が塗布されている。ここで、この第１の被覆部６３として使用される第１の樹脂(一例として、上記第１の珪素含有硬化性組成物)は、先述の第１実施形態の第１の被覆部１５として使用される第１の樹脂と同様であるので、詳細な説明を省略する。   Then, a covering which is a first covering portion is formed so as to cover the entire surface of the SiC GTO thyristor element 51 and the lead wires 56 and 58 and the electrodes 57 and 60 and a part of the terminals 61 and 62 on the electrodes 57 and 60. A first resin (for example, the first silicon-containing curable composition) serving as the portion 63 is applied. Here, the first resin (as an example, the first silicon-containing curable composition) used as the first covering portion 63 is used as the first covering portion 15 of the first embodiment described above. The detailed description is omitted because it is the same as the first resin.

また、この実施形態では、上記第１の被覆部６３の全表面６３Ａを覆う第２の被覆部６４となる第２の樹脂(一例として上記第２の珪素含有硬化性組成物)が塗布されている。この第２の被覆部６４として使用される第２の樹脂(一例として上記第２の珪素含有硬化性組成物)は、先述の第１実施形態の第２の被覆部１６として使用される第２の樹脂と同様であるので、詳細な説明を省略する。   Further, in this embodiment, a second resin (as an example, the second silicon-containing curable composition) to be the second covering portion 64 that covers the entire surface 63A of the first covering portion 63 is applied. Yes. The second resin used as the second covering portion 64 (as an example, the second silicon-containing curable composition) is a second resin used as the second covering portion 16 of the above-described first embodiment. The detailed description is omitted because it is the same as the resin.

さらに、この実施形態では、上記支持体５３に嵌合部をなす嵌合溝６９が形成されている。この嵌合溝６９は、第１の被覆部６３の周囲を囲むように延在している。なお、一例として、上記嵌合溝６９は、第１の被覆部６３の周縁形状に対応して四角形,楕円,円等の形状に第１の被覆部６３の周囲を囲むように延在していればよい。また、上記嵌合溝６９は必ずしも連続的に第１の被覆部の周囲を囲んでいなくてもよく、第１の被覆部の周囲を断続的に囲んでいてもよい。   Further, in this embodiment, a fitting groove 69 that forms a fitting portion is formed in the support 53. The fitting groove 69 extends so as to surround the first covering portion 63. As an example, the fitting groove 69 extends in a shape such as a quadrangle, an ellipse, or a circle so as to surround the first covering portion 63 corresponding to the peripheral shape of the first covering portion 63. Just do it. Further, the fitting groove 69 does not necessarily have to continuously surround the first covering portion, and may intermittently surround the first covering portion.

上記支持体５３の嵌合溝６９には、上記第２の被覆部６４の端部６７が密に嵌合している。なお、一例として、上記端部６７は、第１の被覆部６３,嵌合溝６９の周縁形状に対応して四角形,楕円形,円形,多角形等の形状に第１の被覆部６３の周囲を囲むように延在していればよい。また、上記嵌合溝６９は必ずしも連続的に第１の被覆部の周囲を囲んでいなくてもよく、第１の被覆部の周囲を断続的に囲んでいてもよい。   The end portion 67 of the second covering portion 64 is closely fitted in the fitting groove 69 of the support body 53. In addition, as an example, the end portion 67 has a rectangular shape, an elliptical shape, a circular shape, a polygonal shape, or the like corresponding to the peripheral shape of the first covering portion 63 and the fitting groove 69. It only has to extend so as to surround. Further, the fitting groove 69 does not necessarily have to continuously surround the first covering portion, and may intermittently surround the first covering portion.

この実施形態によれば、高い耐熱性と高い耐電圧性を有すると共に高い柔軟性を有する第１の被覆部６３でもって、ＧＴＯサイリスタ素子５１を絶縁できる。また、上記支持体５３上のセラミック絶縁基板５２の上面５２Ａに載置されたＧＴＯサイリスタ素子５１の表面を被覆する第１の被覆部６３の表面６３Ａを被覆する第２の被覆部６４の端部６７が、上記支持体５３の嵌合溝６９に密に嵌合している。この支持体５３の嵌合溝６９に上記第２の樹脂(一例として、上記第２の珪素含有硬化性組成物)が流し込まれることで密に嵌合した第２の被覆部６４の環状の端部６７が支持体５３に対するアンカーとしての機能を果たす。これにより、支持体５３との線膨張係数の差がかなりある第２の被覆部６４が高温時(例えば２００℃以上)に支持体５３から剥離するのを抑制できる。   According to this embodiment, the GTO thyristor element 51 can be insulated by the first covering portion 63 having high heat resistance, high voltage resistance and high flexibility. Further, the end portion of the second covering portion 64 that covers the surface 63A of the first covering portion 63 that covers the surface of the GTO thyristor element 51 mounted on the upper surface 52A of the ceramic insulating substrate 52 on the support 53. 67 is closely fitted in the fitting groove 69 of the support 53. An annular end of the second covering portion 64 closely fitted by pouring the second resin (for example, the second silicon-containing curable composition) into the fitting groove 69 of the support 53. The part 67 functions as an anchor for the support 53. Thereby, it can suppress that the 2nd coating | coated part 64 with a considerable difference in linear expansion coefficient with the support body 53 peels from the support body 53 at the time of high temperature (for example, 200 degreeC or more).

また、上記第２の被覆部６４の膨張時には上記第２の被覆部６４の端部６７が外周側に向けて上記支持体５３の嵌合溝６９の外周面に押しつけられ、上記第２の被覆部６４の収縮時には上記第２の被覆部６４の端部６７が内周側に向けて上記支持体５３の嵌合溝６９の内周面に押しつけられる。よって、第２の被覆部６４の膨張と収縮により支持体５３と第２の被覆部６４との間に隙間が発生することを抑制できて、上記嵌合溝６９から内部への空気の侵入を抑制できる。   Further, when the second covering portion 64 is expanded, the end portion 67 of the second covering portion 64 is pressed toward the outer peripheral surface of the fitting groove 69 of the support body 53 toward the outer peripheral side, and the second covering portion 64 is pressed. When the portion 64 contracts, the end portion 67 of the second covering portion 64 is pressed against the inner peripheral surface of the fitting groove 69 of the support 53 toward the inner peripheral side. Therefore, it can suppress that a clearance gap generate | occur | produces between the support body 53 and the 2nd coating | coated part 64 by expansion | swelling and shrinkage | contraction of the 2nd coating | coated part 64, and the penetration | invasion of the air from the said fitting groove | channel 69 to the inside can be suppressed. Can be suppressed.

また、第１の被覆部６３がセラミック製の絶縁基板５２と第２の被覆部６４との間で緩衝材として働き、高温時の応力を低減できる。これにより、この実施形態によれば、高耐熱性と高耐電圧性を達成できると共にＧＴＯサイリスタ素子５１の被覆部６３とＧＴＯサイリスタ素子５１の支持体をなすセラミック製の絶縁基板５２との密着性を向上でき、高温での使用を可能にできる。   Moreover, the 1st coating | coated part 63 works as a buffer material between the insulating board | substrate 52 made from a ceramic, and the 2nd coating | coated part 64, and can reduce the stress at the time of high temperature. As a result, according to this embodiment, high heat resistance and high voltage resistance can be achieved, and adhesion between the covering portion 63 of the GTO thyristor element 51 and the ceramic insulating substrate 52 serving as a support for the GTO thyristor element 51 is achieved. And can be used at high temperatures.

尚、上記第４実施形態の変形例を、図６に示す。この図６に示す変形例は、上記支持体５３に替えて支持体１０３を有し、上記第２の被覆部６４に替えて第２の被覆部１１４を有する点だけが、上述の第４実施形態と異なる。そして、この変形例の支持体１０３は、図４の嵌合溝６９に替えて、嵌合部として嵌合凸部１１９を有する点が図４の支持体５３と異なる。また、この変形例の第２の被覆部１１４は、図４の端部６７に替えて、嵌合溝１１７を有する点が図４の第２の被覆部６４と異なる。   A modification of the fourth embodiment is shown in FIG. The modified example shown in FIG. 6 has the support body 103 instead of the support body 53, and has the second covering portion 114 instead of the second covering portion 64. Different from form. And the support body 103 of this modification differs from the support body 53 of FIG. 4 in the point which has the fitting convex part 119 as a fitting part instead of the fitting groove 69 of FIG. Further, the second covering portion 114 of this modification is different from the second covering portion 64 of FIG. 4 in that it has a fitting groove 117 instead of the end portion 67 of FIG.

この第４実施形態の変形例では、上記支持体１０３上のセラミック絶縁基板５２の上面５２Ａに載置されたＧＴＯサイリスタ素子５１の表面を被覆する第１の被覆部６３の表面６３Ａを被覆する第２の被覆部１１４の嵌合溝１１７が、上記支持体１０３の嵌合凸部１１９に密に嵌合している。この支持体１０３の嵌合凸部１１９上から上記第２の樹脂(一例として、上記第２の珪素含有硬化性組成物)が流し込まれることで上記支持体１０３の嵌合凸部１１９と密に嵌合した第２の被覆部１１４の環状の嵌合溝１１７が支持体１０３に対するアンカーとしての機能を果たす。これにより、支持体１０３との線膨張係数の差がかなりある第２の被覆部１１４が高温時(例えば２００℃以上)に支持体１０３から剥離するのを抑制できる。   In the modification of the fourth embodiment, the first surface 63A of the first covering portion 63 that covers the surface of the GTO thyristor element 51 placed on the upper surface 52A of the ceramic insulating substrate 52 on the support 103 is covered. The fitting groove 117 of the second covering portion 114 is closely fitted to the fitting convex portion 119 of the support 103. The second resin (as an example, the second silicon-containing curable composition) is poured from above the fitting convex portion 119 of the support 103 so that the fitting convex portion 119 of the support 103 is closely packed. The annular fitting groove 117 of the fitted second covering portion 114 functions as an anchor for the support 103. Thereby, it can suppress that the 2nd coating | coated part 114 with a considerable difference in a linear expansion coefficient with the support body 103 peels from the support body 103 at the time of high temperature (for example, 200 degreeC or more).

また、この変形例では、上記第２の被覆部１１４の膨張時には上記第２の被覆部１１４の嵌合溝１１７が外周側に向けて上記支持体１０３の嵌合凸部１１９に押しつけられ、上記第２の被覆部１１４の収縮時には上記第２の被覆部１１４の嵌合溝１１７が内周側に向けて上記嵌合凸部１１９に押しつけられる。これによって、上記第２の被覆部１１４の膨張と収縮により支持体１０３と第２の被覆部１１４との間に隙間が発生することを抑制できて、上記嵌合凸部１１９から内部への空気の侵入を抑制できる。   Further, in this modified example, when the second covering portion 114 is expanded, the fitting groove 117 of the second covering portion 114 is pressed against the fitting convex portion 119 of the support body 103 toward the outer peripheral side, When the second covering portion 114 contracts, the fitting groove 117 of the second covering portion 114 is pressed against the fitting convex portion 119 toward the inner peripheral side. As a result, it is possible to suppress the generation of a gap between the support body 103 and the second covering portion 114 due to the expansion and contraction of the second covering portion 114, and air from the fitting convex portion 119 to the inside. Can be prevented.

なお、この変形例においても、上記嵌合凸部１１９は、第１の被覆部６３,嵌合溝１１７の周縁形状に対応して四角形,楕円形,円形,多角形等の形状に第１の被覆部６３の周囲を囲むように延在していればよい。また、上記嵌合凸部１１９は必ずしも連続的に第１の被覆部の周囲を囲んでいなくてもよく、第１の被覆部６３の周囲を断続的に囲んでいてもよい。   Also in this modified example, the fitting convex portion 119 has a first shape such as a quadrangular shape, an elliptical shape, a circular shape, or a polygon shape corresponding to the peripheral shape of the first covering portion 63 and the fitting groove 117. What is necessary is just to extend so that the circumference | surroundings of the coating | coated part 63 may be enclosed. Further, the fitting convex portion 119 does not necessarily need to continuously surround the first covering portion, and may intermittently surround the first covering portion 63.

(第５の実施の形態)
次に、図５に、この発明の半導体装置の第５実施形態を示す。この第５実施形態は、耐圧５ｋＶのＳｉＣ ＧＴＯサイリスタ素子７１を有し、このＳｉＣ サイリスタ素子７１は、カソード電極７９がセラミック絶縁基板７２の上面７２Ａに配置されるように載置されている。このセラミック絶縁基板７２の裏面には裏面電極７３が形成されている。上記セラミック絶縁基板７２は、一例として酸化アルミニウム,窒化アルミニウム,窒化ケイ素等で作製される。 (Fifth embodiment)
Next, FIG. 5 shows a fifth embodiment of the semiconductor device of the present invention. The fifth embodiment has a SiC GTO thyristor element 71 having a withstand voltage of 5 kV, and this SiC thyristor element 71 is mounted such that the cathode electrode 79 is disposed on the upper surface 72 A of the ceramic insulating substrate 72. A back electrode 73 is formed on the back surface of the ceramic insulating substrate 72. For example, the ceramic insulating substrate 72 is made of aluminum oxide, aluminum nitride, silicon nitride, or the like.

上記ＳｉＣ ＧＴＯサイリスタ素子７１のアノード電極７５はアルミニウム,金,銅等で作製されるリード線７６により電極７７に接続されている。また、ＧＴＯサイリスタ素子７１のゲート電極７４は、アルミニウム,金,銅等で作製されるリード線７８により電極８０に接続されている。また、上記電極８０には電極８０上に延在するゲート端子８１が接続され、上記電極７７には電極７７上に延在するアノード端子８２が接続されている。   The anode electrode 75 of the SiC GTO thyristor element 71 is connected to the electrode 77 by a lead wire 76 made of aluminum, gold, copper or the like. The gate electrode 74 of the GTO thyristor element 71 is connected to the electrode 80 by a lead wire 78 made of aluminum, gold, copper or the like. The electrode 80 is connected to a gate terminal 81 extending on the electrode 80, and the electrode 77 is connected to an anode terminal 82 extending on the electrode 77.

そして、上記ＳｉＣ ＧＴＯサイリスタ素子７１の全表面、およびリード線７６,７８と電極７７,８０、および電極７７,８０上の端子８１,８２の一部分を覆うように、第１の被覆部である被覆部８３となる第１の樹脂(例えば、上記第１の珪素含有硬化性組成物)が塗布されている。ここで、この第１の被覆部８３として使用される第１の樹脂は、先述の第１実施形態の第１の被覆部１５として使用される第１の樹脂と同様であるので、詳細な説明を省略する。   Then, a covering which is a first covering portion is provided so as to cover the entire surface of the SiC GTO thyristor element 71, the lead wires 76 and 78, the electrodes 77 and 80, and a part of the terminals 81 and 82 on the electrodes 77 and 80. A first resin (for example, the first silicon-containing curable composition) to be the portion 83 is applied. Here, the first resin used as the first covering portion 83 is the same as the first resin used as the first covering portion 15 of the first embodiment described above. Is omitted.

また、上記電極７７,８０およびカソード電極７９と裏面電極７３は銅製であり、この電極７７,８０およびカソード電極７９と裏面電極７３およびセラミック絶縁基板７２が支持体としてのＤＢＣ(ダブル・ボンディング・カッパー)基板９１を構成している。そして、このＤＢＣ基板９１は、セラミック絶縁基板７２上に銅製の溝形成用パターン部９０が上記第１の被覆部８３の周囲を囲むように形成されている。この溝形成用パターン部９０は、上記電極７７,８０との間に嵌合溝８９を形成している。この嵌合溝８９は、上記第１の被覆部８３の周囲を囲むように形成される。   The electrodes 77 and 80, the cathode electrode 79, and the back electrode 73 are made of copper, and the electrodes 77, 80, the cathode electrode 79, the back electrode 73, and the ceramic insulating substrate 72 serve as a DBC (double bonding copper) as a support. ) A substrate 91 is formed. The DBC substrate 91 is formed on a ceramic insulating substrate 72 so that a copper groove forming pattern portion 90 surrounds the first covering portion 83. The groove forming pattern portion 90 forms a fitting groove 89 between the electrodes 77 and 80. The fitting groove 89 is formed so as to surround the first covering portion 83.

また、この実施形態では、上記第１の被覆部８３の全表面８３Ａを覆う第２の被覆部８４となる第２の珪素含有硬化性組成物が塗布されている。この第２の被覆部８４として使用される第２の樹脂は、先述の第１実施形態の第２の被覆部１６として使用される第２の樹脂と同様であるので、詳細な説明を省略する。   Moreover, in this embodiment, the 2nd silicon-containing curable composition used as the 2nd coating | coated part 84 which covers the whole surface 83A of the said 1st coating | coated part 83 is apply | coated. The second resin used as the second covering portion 84 is the same as the second resin used as the second covering portion 16 of the first embodiment described above, and detailed description thereof is omitted. .

この実施形態によれば、高い耐熱性と高い耐電圧性を有すると共に高い柔軟性を有する第１の被覆部８３でもって、ＧＴＯサイリスタ素子７１を絶縁できる。また、上記第２の被覆部８４は、環状の端部８７が上記ＤＢＣ基板９１の環状の嵌合溝８９に密に嵌合している。すなわち、このＤＢＣ基板９１の環状の嵌合溝８９に第２の樹脂(例えば、上記第２の珪素含有硬化性組成物)が流し込まれることで密に嵌合した第２の被覆部８４の環状の端部８７がＤＢＣ基板９１に対するアンカーとしての機能を果たす。これにより、ＤＢＣ基板９１との線膨張係数の差がかなりある第２の被覆部８４が高温時(例えば２００℃以上)にＤＢＣ基板９１から剥離するのを抑制できる。また、この実施形態では、上記第２の被覆部８４の環状の端部８７と外周端部８８とで上記ＤＢＣ基板９１の溝形成用パターン部９０の内周側と外周側の両側から挟んでいるので、上記第２の被覆部８４をＤＢＣ基板９１から剥がれにくくすることができる。   According to this embodiment, the GTO thyristor element 71 can be insulated by the first covering portion 83 having high heat resistance, high voltage resistance and high flexibility. The second covering portion 84 has an annular end portion 87 closely fitted in an annular fitting groove 89 of the DBC substrate 91. That is, the annular shape of the second covering portion 84 closely fitted by pouring the second resin (for example, the second silicon-containing curable composition) into the annular fitting groove 89 of the DBC substrate 91. These end portions 87 function as anchors for the DBC substrate 91. Thereby, it can suppress that the 2nd coating | coated part 84 in which the difference of a linear expansion coefficient with the DBC board | substrate 91 is considerable peels from the DBC board | substrate 91 at the time of high temperature (for example, 200 degreeC or more). Further, in this embodiment, the annular end portion 87 and the outer peripheral end portion 88 of the second covering portion 84 are sandwiched from both the inner peripheral side and the outer peripheral side of the groove forming pattern portion 90 of the DBC substrate 91. Therefore, the second covering portion 84 can be made difficult to peel off from the DBC substrate 91.

また、上記第２の被覆部８４の膨張時には上記第２の被覆部８４の端部８７が外周側に向けて上記嵌合溝８９の外周面に押しつけられ、上記第２の被覆部８４の収縮時には上記第２の被覆部８４の端部８７が内周側に向けて上記嵌合溝８９の内周面に押しつけられる。よって、第２の被覆部８４の膨張と収縮によりセラミック絶縁基板７２と第２の被覆部８４との間に隙間が発生することを抑制できて、上記嵌合溝８９から内部への空気の侵入を抑制できる。   Further, when the second covering portion 84 is expanded, the end portion 87 of the second covering portion 84 is pressed toward the outer peripheral surface of the fitting groove 89 toward the outer peripheral side, and the second covering portion 84 contracts. Sometimes, the end portion 87 of the second covering portion 84 is pressed against the inner peripheral surface of the fitting groove 89 toward the inner peripheral side. Therefore, it is possible to suppress the occurrence of a gap between the ceramic insulating substrate 72 and the second covering portion 84 due to the expansion and contraction of the second covering portion 84, and the intrusion of air from the fitting groove 89 to the inside. Can be suppressed.

また、第１の被覆部８３がＤＢＣ基板９１と第２の被覆部８４との間で緩衝材として働き、高温時の応力を低減できる。これにより、この実施形態によれば、高耐熱性と高耐電圧性を達成できると共にＧＴＯサイリスタ素子７１の被覆部８３とＧＴＯサイリスタ素子７１の支持体をなすＤＢＣ基板９１との密着性を向上でき、高温での使用を可能にできる。   Moreover, the 1st coating | coated part 83 works as a buffer material between the DBC board | substrate 91 and the 2nd coating | coated part 84, and can reduce the stress at the time of high temperature. As a result, according to this embodiment, high heat resistance and high voltage resistance can be achieved, and adhesion between the covering portion 83 of the GTO thyristor element 71 and the DBC substrate 91 that forms the support of the GTO thyristor element 71 can be improved. Can be used at high temperatures.

なお、上記ＤＢＣ基板９１の嵌合溝８９は、必ずしも環状である必要はなく、第１の被覆部８３の周縁形状に対応して四角形,楕円,円等の形状に第１の被覆部８３の周囲を囲むように延在していればよい。また、上記嵌合溝８９は必ずしも連続的に第１の被覆部８３の周囲を囲んでいなくてもよく、第１の被覆部の周囲を断続的あるいは部分的に囲んでいてもよい。また、上記嵌合溝８９に嵌合される端部８７の形状も嵌合溝８９の形状と同様、必ずしも環状である必要はなく、第１の被覆部８３の周縁形状に対応して四角形,楕円,円等の形状に第１の被覆部８３の周囲を囲むように延在していればよい。また、端部８７は必ずしも連続的に第１の被覆部８３の周囲を囲んでいなくてもよく、第１の被覆部の周囲を断続的あるいは部分的に囲んでいてもよい。   The fitting groove 89 of the DBC substrate 91 is not necessarily annular, and the first covering portion 83 has a shape such as a quadrangle, an ellipse, or a circle corresponding to the peripheral shape of the first covering portion 83. It only needs to extend so as to surround the periphery. In addition, the fitting groove 89 does not necessarily continuously surround the first covering portion 83, and may intermittently or partially surround the first covering portion. Similarly to the shape of the fitting groove 89, the shape of the end portion 87 fitted into the fitting groove 89 is not necessarily an annular shape, and has a rectangular shape corresponding to the peripheral shape of the first covering portion 83. What is necessary is just to extend so that the circumference | surroundings of the 1st coating | coated part 83 may be enclosed in shapes, such as an ellipse and a circle | round | yen. Further, the end portion 87 may not necessarily continuously surround the first covering portion 83 and may intermittently or partially surround the first covering portion.

尚、上記第１〜第５実施形態では、半導体素子としてＳｉＣによるＧＴＯサイリスタを備えたが、ｐｎダイオード素子等、ＳｉＣで作製された他の半導体素子を備えてもよく、ＧａＮもしくは他のワイドギャップ半導体で作製された半導体素子を備えてもよく、ワイドギャップ半導体以外の半導体で作製された半導体素子を備えてもよい。また、上記第１〜第５実施形態では、支持体３,３３,５３,ＤＢＣ基板９１に１つの半導体素子を載置したが、２つの半導体素子もしくは３つ以上の半導体素子を載置してもよい。また、上記第１〜第４実施形態では、支持体３,３３,５３を銅製としたが、アルミニウム等の他の金属製としてもよく、Ａl‐ＳｉＣのような複合放熱材料としてもよい。   In the first to fifth embodiments, the GTO thyristor made of SiC is provided as the semiconductor element. However, other semiconductor elements made of SiC such as a pn diode element may be provided, and GaN or other wide gaps may be provided. A semiconductor element made of a semiconductor may be provided, or a semiconductor element made of a semiconductor other than a wide gap semiconductor may be provided. In the first to fifth embodiments, one semiconductor element is placed on the supports 3, 33, 53, and the DBC substrate 91. However, two semiconductor elements or three or more semiconductor elements are placed. Also good. Moreover, in the said 1st-4th embodiment, although the support bodies 3,33,53 were made from copper, they may be made from other metals, such as aluminum, and are good also as composite heat dissipation material like Al-SiC.

この発明は、一例として高耐電圧かつ高耐熱のワイドギャップ半導体装置に利用可能であり、耐熱性が高い高耐電圧パワー半導体装置として有用である。   As an example, the present invention can be used for a wide-gap semiconductor device having high withstand voltage and high heat resistance, and is useful as a high withstand voltage power semiconductor device having high heat resistance.

１,３１,５１,７１ ＧＴＯサイリスタ素子
２,３２,５５,７５ アノード電極
３,３３,５３,１０３ 支持体
３Ａ,３３Ａ,５２Ａ 上面
４,３７,５９,７９ カソード電極
６,３６,５４,７４ ゲート電極
７,８,５６,５８,７６,７８ リード線
１０,６２,８２ アノード端子
１１,６１,８１ ゲート端子
１４,１９ 絶縁材
１５,６３,８３ 第１の被覆部
１６,６４,８４,１１４ 第２の被覆部
２１,６９,８９,１１７ 嵌合溝
２２,６７ 突起
２３ 環状の端部
２５ 環状の段差部
３５,５２,７２ セラミック絶縁基板
４１ 第３の被覆部
４２ 第４の被覆部
７３ 裏面電極
９０ 溝形成用パターン部
９１ ＤＢＣ基板
１１９ 嵌合凸部 1,31,51,71 GTO thyristor element 2,32,55,75 Anode electrode 3,33,53,103 Support body 3A, 33A, 52A Upper surface 4,37,59,79 Cathode electrode 6,36,54,74 Gate electrode 7, 8, 56, 58, 76, 78 Lead wire 10, 62, 82 Anode terminal 11, 61, 81 Gate terminal 14, 19 Insulation material 15, 63, 83 First covering portion 16, 64, 84, 114 Second covering portion 21, 69, 89, 117 Fitting groove 22, 67 Protrusion 23 Ring-shaped end portion 25 Ring-shaped stepped portion 35, 52, 72 Ceramic insulating substrate 41 Third covering portion 42 Fourth covering portion 73 Back electrode 90 Groove forming pattern part 91 DBC substrate 119 Fitting convex part

Claims (9)

半導体素子と、
上記半導体素子が載置される支持体と、
上記半導体素子を外部機器に電気的に接続するための電気接続部と、
上記半導体素子および上記半導体素子が載置される上記支持体の上面を被覆すると共に上記電気接続部の少なくとも一部を被覆する第１の樹脂で作製された第１の被覆部と、
上記第１の被覆部の表面を被覆すると共に上記支持体に接する第２の樹脂で作製された第２の被覆部とを備え、
上記第２の樹脂の硬度は、上記第１の樹脂の硬度よりも大きく、
上記支持体は、
上記第２の被覆部の一部が密に嵌合されている嵌合部を有することを特徴とする半導体装置。 A semiconductor element;
A support on which the semiconductor element is mounted;
An electrical connection for electrically connecting the semiconductor element to an external device;
A first covering portion made of a first resin that covers the upper surface of the semiconductor element and the support on which the semiconductor element is placed and covers at least a part of the electrical connection portion;
A second covering portion made of a second resin that covers the surface of the first covering portion and is in contact with the support;
The hardness of the second resin is greater than the hardness of the first resin,
The support is
A semiconductor device having a fitting portion in which a part of the second covering portion is closely fitted. 請求項１に記載の半導体装置において、
上記支持体の上記嵌合部は、上記第１の被覆部の周囲を囲む形状であり、
上記第２の被覆部の上記一部は、上記支持体の上記嵌合部に密に嵌合されている端部であることを特徴とする半導体装置。 The semiconductor device according to claim 1,
The fitting portion of the support body has a shape surrounding the periphery of the first covering portion,
The part of the second covering part is an end part closely fitted to the fitting part of the support. 請求項１または２に記載の半導体装置において、
上記第１の樹脂および上記第２の樹脂は、線膨張係数が５００ｐｐｍ以下であると共にＪＩＳ規格の規格番号ＪＩＳ Ｃ ４００３による耐熱性クラスがＦ以上であることを特徴とする半導体装置。 The semiconductor device according to claim 1 or 2,
The semiconductor device, wherein the first resin and the second resin have a linear expansion coefficient of 500 ppm or less and a heat resistance class according to JIS standard number JIS C 4003 of F or more. 請求項１から３のいずれか１つに記載の半導体装置において、
上記第１の被覆部を作製する第１の樹脂は、
下記の(Ａ)成分、(Ｂ)成分および(Ｄ)成分を含有する珪素含有硬化性組成物であり、
上記第２の被覆部を作製する第２の樹脂は、
下記の(Ａ)成分、(Ｂ)成分、(Ｄ)成分および (Ｆ)成分を含有する珪素含有硬化性組成物であり、
上記第２の被覆部は、上記珪素含有硬化性組成物を熱硬化させた硬化物であり、上記硬化物の線膨張係数が５０〜２００ｐｐｍ/℃であることを特徴としている。
(Ａ)成分：下記一般式（１）で表される珪素含有化合物。
Figure 2011222869
 （上式(１)中、Ｒ１〜Ｒ７は、同一でも異なっていてもよく、炭素原子数１〜１２の飽和脂肪族炭化水素基、又は、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基であり（但し、Ｒ５及びＲ６は同時に炭素原子数１〜１２の飽和脂肪族炭化水素基となることはない）、Ｒ８は炭素原子数２〜４のアルキレン基であり、Ｚは炭素原子数２〜４のアルケニル基若しくはアルキニル基であり、ａは２〜７の数であり、ｂは１〜７の数であり、ｂを繰り返し数とする重合部分と、ａ−ｂを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。ｅは０〜３の数である。ｃ及びｄは、ｄ：ｃ＝１：１〜１：１００且つ全てのｃと全てのｄとの合計が１５以上となる数であって、且つ一般式（１）で表される珪素含有化合物の質量平均分子量を３０００〜１００万とする数である。また、ｃを繰り返し数とする重合部分と、ｄを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。）
(Ｂ)成分：下記一般式（２）で表される珪素含有化合物。
Figure 2011222869
 （上式(２)中、Ｒ９〜Ｒ１５は、同一でも異なっていてもよく、炭素原子数１〜１２の飽和脂肪族炭化水素基、又は、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基であり（但し、Ｒ１３及びＲ１４は同時に炭素原子数１〜１２の飽和脂肪族炭化水素基となることはない）、Ｒ１６は炭素原子数２〜４のアルキレン基であり、Ｈは炭素原子数２〜４のアルケニル基若しくはアルキニル基であり、ｆは２〜７の数であり、ｇは１〜７の数であり、ｇを繰り返し数とする重合部分と、ｆ−ｇを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。ｊは０〜３の数である。ｈ及びｉは、ｉ：ｈ＝１：１〜１：１００且つ全てのｈと全てのｉとの合計が１５以上となる数であって、且つ一般式（２）で表される珪素含有化合物の質量平均分子量を３０００〜１００万とする数である。また、ｈを繰り返し数とする重合部分と、ｉを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。）
(Ｄ)成分：白金系触媒である硬化反応触媒
(Ｆ)成分：セラミックス粒子 The semiconductor device according to any one of claims 1 to 3,
The first resin for producing the first covering portion is
A silicon-containing curable composition containing the following component (A), component (B) and component (D):
The second resin for producing the second covering portion is:
A silicon-containing curable composition containing the following component (A), component (B), component (D) and component (F):
The said 2nd coating | coated part is the hardened | cured material which heat-cured the said silicon-containing curable composition, The linear expansion coefficient of the said hardened | cured material is 50-200 ppm / degreeC, It is characterized by the above-mentioned.
Component (A): A silicon-containing compound represented by the following general formula (1).
Figure 2011222869
 (In the above formula (1), R 1 to R 7 may be the same or different and are substituted with a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms or a saturated aliphatic hydrocarbon group. Or an aromatic hydrocarbon group having 6 to 12 carbon atoms (provided that R 5 and R 6 do not simultaneously become a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms), and R 8 is carbon. An alkylene group having 2 to 4 atoms, Z is an alkenyl group or alkynyl group having 2 to 4 carbon atoms, a is a number from 2 to 7, b is a number from 1 to 7, and b is The polymer moiety having the repeating number and the polymer moiety having the repeating number ab may be block-like or random, e is a number from 0 to 3. c and d are d: c = 1: 1 to 1: 100, and the sum of all c and all d is 15 or more, and The number average molecular weight of the silicon-containing compound represented by the general formula (1) is a number between 3000 and 1,000,000, and the polymerization portion where c is the number of repetitions and the polymerization portion where d is the number of repetitions are: It may be block or random.)
Component (B): A silicon-containing compound represented by the following general formula (2).
Figure 2011222869
 (In the above formula (2), R 9 to R 15 may be the same or different and are substituted with a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms or a saturated aliphatic hydrocarbon group. Or an aromatic hydrocarbon group having 6 to 12 carbon atoms (provided that R 13 and R 14 do not simultaneously become a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms), and R 16 is carbon. An alkylene group having 2 to 4 atoms, H is an alkenyl group or alkynyl group having 2 to 4 carbon atoms, f is a number from 2 to 7, g is a number from 1 to 7, and g is The polymerization part having the number of repetitions and the polymerization part having the number of repetitions of f-g may be in the form of blocks or random, j is a number from 0 to 3. h and i are i: h = 1: 1 to 1: 100 and the sum of all h and all i is 15 or more In addition, the silicon-containing compound represented by the general formula (2) has a mass average molecular weight of 3000 to 1,000,000, a polymer part having h as a repeat number, and a polymer part having i as a repeat number. And may be block or random.)
Component (D): a curing reaction catalyst that is a platinum catalyst
Component (F): Ceramic particles 請求項４に記載の半導体装置において、
上記第１の被覆部は、上記(Ｆ)成分を含有し、
さらに、上記第１の被覆部に表面が被覆されていると共に上記半導体素子を直接被覆する第３の被覆部と、
上記第２の被覆部に表面が被覆されていると共に上記第１の被覆部を直接被覆する第４の被覆部とを備え、
上記第３の被覆部および第４の被覆部を作製する珪素含有硬化性組成物は、
上記の(Ａ)成分、(Ｂ)成分、(Ｄ)成分および(Ｆ)成分を含有する珪素含有硬化性組成物であり、
上記第３および第４の被覆部を作製する珪素含有硬化性組成物の成分の内の上記(Ｆ)成分の含有重量％が上記第１および第２の被覆部を作製する珪素含有硬化性組成物の成分の内の上記(Ｆ)成分の含有重量％よりも低いことを特徴とする半導体装置。 The semiconductor device according to claim 4,
The first covering portion contains the component (F),
Further, a third covering portion whose surface is coated on the first covering portion and directly covering the semiconductor element;
A surface of the second covering portion is coated and a fourth covering portion that directly covers the first covering portion;
The silicon-containing curable composition for producing the third covering portion and the fourth covering portion is:
A silicon-containing curable composition containing the above component (A), component (B), component (D) and component (F),
Of the components of the silicon-containing curable composition for producing the third and fourth coating parts, the content weight percentage of the component (F) is the silicon-containing curable composition for producing the first and second coating parts. A semiconductor device characterized in that the content is lower than the content weight% of the component (F) in the components of the product. 請求項１から５のいずれか１つに記載の半導体装置において、
上記半導体素子と上記支持体との間に配置されたセラミック絶縁基板を備えることを特徴とする半導体装置。 The semiconductor device according to any one of claims 1 to 5,
A semiconductor device comprising a ceramic insulating substrate disposed between the semiconductor element and the support. 請求項１から６のいずれか１つに記載の半導体装置において、
上記支持体は、金属、または、金属と半導体の複合材料、または、異種金属の積層構造材料で作製されていることを特徴とする半導体装置。 The semiconductor device according to any one of claims 1 to 6,
The semiconductor device is characterized in that the support is made of a metal, a composite material of a metal and a semiconductor, or a stacked structure material of different metals. 請求項７に記載の半導体装置において、
上記支持体の表面がメッキされていることを特徴とする半導体装置。 The semiconductor device according to claim 7,
A semiconductor device, wherein the surface of the support is plated. 請求項１から８のいずれか１つに記載の半導体装置において、
上記半導体素子が、ワイドギヤップ半導体で作製されたワイドギヤップ半導体素子であることを特徴とする半導体装置。 The semiconductor device according to any one of claims 1 to 8,
A semiconductor device, wherein the semiconductor element is a wide gear semiconductor element made of a wide gear semiconductor.
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JP7446125B2 (en) 2020-02-21 2024-03-08 エイブリック株式会社 Semiconductor device and its manufacturing method

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