JP2011222866A - High-frequency package and manufacturing method thereof - Google Patents

High-frequency package and manufacturing method thereof Download PDF

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JP2011222866A
JP2011222866A JP2010092356A JP2010092356A JP2011222866A JP 2011222866 A JP2011222866 A JP 2011222866A JP 2010092356 A JP2010092356 A JP 2010092356A JP 2010092356 A JP2010092356 A JP 2010092356A JP 2011222866 A JP2011222866 A JP 2011222866A
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circuit board
conductor layer
frequency
package
solder
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Tomoyuki Umino
友幸 海野
Kazuyoshi Inami
和喜 稲見
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a high-frequency package which prevents high-frequency signals from leaking from inside the package to the outside and a method for manufacturing the same.SOLUTION: The high-frequency package comprises a multilayer board 1; a MMIC4 mounted on the multilayer board 1; a conductor pattern 2 which is nearly loop-shaped encircling an area on the multilayer board 1 in which area the MMIC4 is mounted and includes at least one notch in pattern 3 for forming a ventilation hole where the surface of the multilayer board 1 is exposed; a metal cover 5, of a rectangular shape as viewed from above, which is shaped so as to form a cavity between itself and the multilayer board 1 and whose joining face with the conductor pattern 2 is loop-shaped; and a solder bonding layer which bonds the conductor pattern 2 and the metal cover 5 and has a ventilation hole in an discontinuous part of the conductor pattern 2 which is formed by absence of solder between itself and the joining face of the metal cover 5, wherein the ventilation hole is formed at a position whose distance from an edge of the metal cover 5 is an integral multiple of the half wavelength of electromagnetic waves, leakage of which from the cavity is to be prevented.

Description

本発明は、高周波パッケージ及びその製造方法に関する。   The present invention relates to a high frequency package and a manufacturing method thereof.

高周波デバイスで用いられる半導体素子は一般に湿気に弱く、高温高湿下で高周波デバイスを使用すると水分の浸入によって素子が侵されて特性が劣化する。このことから、高周波デバイスを収容する高周波パッケージには、通常は気密構造とすることによって水分の浸入を防ぐ措置が取られる。   A semiconductor element used in a high-frequency device is generally vulnerable to moisture, and when a high-frequency device is used under high temperature and high humidity, the element is affected by the ingress of moisture and the characteristics are deteriorated. For this reason, a high-frequency package that accommodates a high-frequency device is usually provided with an airtight structure to prevent moisture from entering.

しかし、高周波パッケージの気密性を確保することは、部品コスト・製造コストの高騰や品質管理の負担増加などに繋がることから、低コスト化の妨げとなる。   However, securing the airtightness of the high-frequency package leads to an increase in parts cost and manufacturing cost and an increase in the burden of quality control, which hinders cost reduction.

近年では、高周波半導体素子の表面に保護膜（窒化膜など）を形成して、耐湿性を向上させる方法が用いられている。保護膜を形成することによってパッケージの気密構造を不要にできるものの、保護膜を追加することで高周波特性が劣化するため、保護膜の厚さは半導体素子の特性への影響を許容できる範囲に止める必要がある。したがって、結露などによる水分付着に耐えるほどのバリア効果は期待できず、パッケージには結露防止用の通気穴が必要となる。   In recent years, a method for improving moisture resistance by forming a protective film (such as a nitride film) on the surface of a high-frequency semiconductor element has been used. Although the airtight structure of the package can be made unnecessary by forming the protective film, the high-frequency characteristics are deteriorated by adding the protective film. Therefore, the thickness of the protective film is limited to an allowable range that affects the characteristics of the semiconductor element. There is a need. Therefore, a barrier effect that can withstand moisture adhesion due to condensation cannot be expected, and a ventilation hole for preventing condensation is necessary for the package.

また、高周波デバイス用の電子部品パッケージの役割として、外部への電磁波の漏洩及び外部からの電磁波の干渉を遮断するという目的があるため、パッケージは金属又は導電性表面を有した電磁シールド構造であることが必要である。したがって、パッケージに設ける通気穴は、電磁波が通過しないサイズに抑える必要がある。   Also, the role of the electronic component package for high-frequency devices is to block leakage of electromagnetic waves to the outside and interference of electromagnetic waves from the outside, so the package is an electromagnetic shield structure having a metal or conductive surface. It is necessary. Therefore, it is necessary to suppress the vent hole provided in the package to a size that does not allow electromagnetic waves to pass through.

通気穴の形成方法として、安価な接合材料であるはんだを使用して回路基板とシールド部品とを接合し、はんだ接合層に通気穴を形成する方法がある。すなわち、特許文献１に開示される発明のように、基板上の導電パターンを少なくとも１ヶ所が途切れた環状とすることで、基板上にはんだが載らない部分を作り、通気穴を形成する方法である。   As a method for forming a vent hole, there is a method in which a circuit board and a shield component are joined using solder, which is an inexpensive joining material, and a vent hole is formed in a solder joint layer. That is, as in the invention disclosed in Patent Document 1, by making the conductive pattern on the substrate into an annular shape where at least one point is interrupted, a portion where solder is not placed on the substrate is created, and a ventilation hole is formed. is there.

特開２００９−３０２２４８号公報JP 2009-302248 A

しかし、特許文献１に記載の発明のように、基板上にはんだが載らない部分を作り、通気穴を形成する方法では、はんだ量のばらつきによってはんだフィレットの形成状態に差が生じ、通気穴の幅にばらつきが生じてしまう。通気穴の幅が大きいと、パッケージ内部の高周波信号が外部に漏れ、ＥＭＩ（Electromagnetic interference）特性が劣化してしまう。   However, as in the invention described in Patent Document 1, in the method in which a portion on which a solder is not placed is formed on a substrate and a vent hole is formed, a difference occurs in the formation state of the solder fillet due to variations in the amount of solder, Variation in width will occur. If the width of the vent hole is large, a high-frequency signal inside the package leaks to the outside, and EMI (Electromagnetic interference) characteristics deteriorate.

本発明は、上記に鑑みてなされたものであって、パッケージ内から外部への高周波信号の漏洩を防止した高周波パッケージ及びその製造方法を得ることを目的とする。   The present invention has been made in view of the above, and an object of the present invention is to obtain a high-frequency package and a manufacturing method thereof that prevent leakage of a high-frequency signal from the inside of the package to the outside.

上述した課題を解決し、目的を達成するために、本発明は、回路基板と、回路基板上に実装された高周波デバイスと、高周波デバイスが実装された領域を回路基板上において囲う略環状であり、回路基板の表面が露出した不連続部を少なくとも一つ備えた導体層と、回路基板との間にキャビティが形成されるような形状を有し、導体層との接合面が環状であり、上面視略矩形状である金属蓋と、導体層と金属蓋とを接合し、金属蓋の接合面との間にはんだが存在しないことによって形成された通気穴を導体層の不連続部の上に備えたはんだ接合層とを有し、通気穴は、金属蓋の端部からの距離が、キャビティからの漏洩防止の対象とする電磁波の半波長の整数倍の位置に形成されていることを特徴とする。   In order to solve the above-mentioned problems and achieve the object, the present invention is a circuit board, a high-frequency device mounted on the circuit board, and a substantially annular shape surrounding a region where the high-frequency device is mounted on the circuit board. , Having a shape such that a cavity is formed between the circuit board and the conductor layer having at least one discontinuous portion where the surface of the circuit board is exposed, and the joint surface with the conductor layer is annular, A metal lid, which is substantially rectangular when viewed from above, is joined to the conductor layer and the metal lid, and a vent hole formed by the absence of solder between the joint surface of the metal lid is located above the discontinuous portion of the conductor layer. The vent hole is formed at a position where the distance from the end of the metal lid is an integral multiple of half the wavelength of the electromagnetic wave to be prevented from leaking from the cavity. Features.

本発明によれば、はんだ量のばらつきによってはんだフィレットの形成状態に差が生じたとしても、パッケージ内から外部への高周波信号の漏洩を防止できるという効果を奏する。   According to the present invention, there is an effect that leakage of a high-frequency signal from the inside of the package to the outside can be prevented even if a difference occurs in the formation state of the solder fillet due to variations in the amount of solder.

図１は、本発明の実施の形態にかかる高周波パッケージの構成を示す平面図である。FIG. 1 is a plan view showing a configuration of a high-frequency package according to an embodiment of the present invention. 図２は、本発明の実施の形態にかかる高周波パッケージの側面図である。FIG. 2 is a side view of the high-frequency package according to the embodiment of the present invention. 図３は、パッケージからの漏洩を防止したい周波数の電磁波の半波長の整数倍とはならない位置に通気穴形成用パターンを形成した高周波パッケージの構成を示す平面図である。FIG. 3 is a plan view showing a configuration of a high-frequency package in which a vent hole forming pattern is formed at a position that is not an integral multiple of a half wavelength of an electromagnetic wave having a frequency that is desired to prevent leakage from the package.

以下に、本発明にかかる高周波パッケージ及びその製造方法の実施の形態を図面に基づいて詳細に説明する。なお、この実施の形態によりこの発明が限定されるものではない。   Embodiments of a high-frequency package and a method for manufacturing the same according to the present invention will be described below in detail with reference to the drawings. Note that the present invention is not limited to the embodiments.

実施の形態．
図１は、本発明の実施の形態にかかる高周波パッケージの構成を示す平面図である。図２は、本発明の実施の形態にかかる高周波パッケージの側面図である。本実施の形態にかかる高周波パッケージは、多層基板１とＭＭＩＣ（Monolithic Microwave Integrated Circuits）４、及び金属蓋５を有する。多層基板１は、ＭＭＩＣ４の実装面に、ＭＭＩＣ４の実装領域を取り囲むように略環状に形成された導体パターン２を備えている。導体パターン２の途切れた部分は、通気穴形成用パターン切り欠き３となっている。ＭＭＩＣ４は、能動素子（トランジスタやダイオードなど）・受動素子（伝送線路、抵抗、容量、インダクタンスなど）を集積して作った回路を半導体基板の上に集積・構成した高周波デバイスであり、増幅器、周波数変換回路、発振器、受信モジュール、送信モジュール、局部発振モジュールなどとして機能する。多層基板１にＭＭＩＣ４を実装することにより、高周波パッケージに所望の機能を容易に付与することが可能である。 Embodiment.
FIG. 1 is a plan view showing a configuration of a high-frequency package according to an embodiment of the present invention. FIG. 2 is a side view of the high-frequency package according to the embodiment of the present invention. The high-frequency package according to the present embodiment includes a multilayer substrate 1, an MMIC (Monolithic Microwave Integrated Circuits) 4, and a metal lid 5. The multilayer substrate 1 includes a conductor pattern 2 formed in a substantially annular shape so as to surround a mounting area of the MMIC 4 on a mounting surface of the MMIC 4. The interrupted portion of the conductor pattern 2 is a vent hole forming pattern cutout 3. The MMIC 4 is a high-frequency device in which a circuit formed by integrating active elements (transistors, diodes, etc.) and passive elements (transmission lines, resistors, capacitors, inductances, etc.) is integrated and configured on a semiconductor substrate. It functions as a conversion circuit, an oscillator, a reception module, a transmission module, a local oscillation module, and the like. By mounting the MMIC 4 on the multilayer substrate 1, it is possible to easily impart a desired function to the high-frequency package.

金属蓋５は、上面視略矩形状であり導体パターン２上にはんだで接合されている。通気穴形成用パターン切り欠き３の部分は、はんだ濡れ性の低い多層基板１の表面が露出しているため、金属蓋５をはんだ接合した際には、多層基板１と金属蓋５との間にはんだ７が入り込まずに隙間が生じ、これが通気穴６となる。   The metal lid 5 is substantially rectangular when viewed from above, and is joined to the conductor pattern 2 by solder. Since the surface of the multilayer substrate 1 having low solder wettability is exposed at the portion of the pattern notch 3 for forming the vent hole, when the metal lid 5 is soldered, the space between the multilayer substrate 1 and the metal lid 5 is exposed. The solder 7 does not enter the gap and a gap is formed, which becomes the vent hole 6.

通気穴形成用パターン切り欠き３は、金属蓋５の端部からの距離が、パッケージからの漏洩を防止したい周波数の電磁波の半波長の整数倍となる位置に形成されている。この位置は、パッケージからの漏洩を防止したい周波数において定常波の節となる位置であるため、パッケージ内に生じる定常波の電界強度はゼロとなる。これにより、はんだ７の供給量が少なくなって通気穴の幅が広がったとしてもパッケージ内からの電磁波の漏洩が軽減される。通気穴の幅のばらつきが許容されることにより、製造工程において高周波パッケージの歩留まりが向上する。金属蓋５の長手方向の端部からの距離がＭＭＩＣ４において処理されるマイクロ波の半波長の整数倍となる位置に通気穴形成用パターン切り欠き３を設けることにより、ＭＭＩＣ４から発せられるマイクロ波がパッケージ外へ漏洩することを防止できる。なお、金属蓋５の端部からの距離がＭＭＩＣ４において処理されるマイクロ波の倍数波の半波長の整数倍となる位置に通気穴形成用パターン３を設けても良い。   The vent hole forming pattern cutout 3 is formed at a position where the distance from the end of the metal lid 5 is an integral multiple of the half wavelength of the electromagnetic wave having a frequency desired to prevent leakage from the package. Since this position is a position that becomes a node of a standing wave at a frequency at which leakage from the package is desired to be prevented, the electric field strength of the standing wave generated in the package becomes zero. Thereby, even if the supply amount of the solder 7 is reduced and the width of the vent hole is widened, leakage of electromagnetic waves from the inside of the package is reduced. By allowing the variation in the width of the vent hole, the yield of the high-frequency package is improved in the manufacturing process. By providing the vent hole pattern notch 3 at a position where the distance from the end in the longitudinal direction of the metal lid 5 is an integral multiple of the half wavelength of the microwave processed in the MMIC 4, the microwave emitted from the MMIC 4 is generated. Leakage outside the package can be prevented. The vent hole forming pattern 3 may be provided at a position where the distance from the end of the metal lid 5 is an integral multiple of a half wavelength of a multiple wave of the microwave processed by the MMIC 4.

なお、金属蓋５の短手方向の長さが、パッケージからの漏洩を防止したい周波数の電磁波の１波長以上となる場合には、短手方向の端部から半波長の整数倍となる位置に通気穴形成用パターンを設けても同様の効果を得ることができる。   When the length of the metal lid 5 in the short direction is one wavelength or more of the electromagnetic wave having a frequency at which leakage from the package is desired to be prevented, the metal lid 5 is positioned at an integer multiple of a half wavelength from the end in the short direction. Even if the vent hole forming pattern is provided, the same effect can be obtained.

比較のために、パッケージからの漏洩を防止したい周波数の電磁波の波長を考慮せずに通気穴形成用パターンを形成した高周波パッケージについて説明する。図３は、パッケージからの漏洩を防止したい周波数の電磁波の半波長の整数倍とはならない位置に通気穴形成用パターンを形成した高周波パッケージの構成を示す平面図である。導体パターン１２に通気穴形成用パターン切り欠き１３を設けることで、基板１１上にはんだが載らない部分を作って通気穴を形成する点に関しては、本実施の形態にかかる高周波パッケージと同様である。この構成では、はんだ量のばらつきにより、はんだフィレットの形成状態に差異が生じ、通気穴の幅がばらつく。   For comparison, a high frequency package in which a vent hole forming pattern is formed without considering the wavelength of an electromagnetic wave having a frequency that is desired to prevent leakage from the package will be described. FIG. 3 is a plan view showing a configuration of a high-frequency package in which a vent hole forming pattern is formed at a position that is not an integral multiple of a half wavelength of an electromagnetic wave having a frequency that is desired to prevent leakage from the package. By providing a vent hole forming pattern notch 13 in the conductor pattern 12 to form a vent hole by forming a portion on which the solder is not placed on the substrate 11, it is the same as the high frequency package according to the present embodiment. . In this configuration, due to variations in the amount of solder, a difference occurs in the formation state of the solder fillet, and the width of the vent hole varies.

図３に示す構成では、通気穴形成用パターン切り欠き１３は、金属蓋１５の端部からの距離が、パッケージからの漏洩を防止したい周波数（ＭＭＩＣ１４が処理するマイクロ波の周波数）の電磁波の半波長の整数倍ではない。このため、通気穴の幅が大きいと、パッケージ内部の高周波信号が外部に漏れてＥＭＩ特性が劣化する可能性がある。したがって、通気穴の幅を律するはんだ量を厳密に管理しなければならなくなる。また、通気穴の幅のばらつきの許容幅が小さくなるため、歩留まりの低下を招く一因となる。   In the configuration shown in FIG. 3, the pattern notch 13 for forming a vent hole has a distance from the end of the metal lid 15 that is a half of the electromagnetic wave having a frequency (the frequency of the microwave processed by the MMIC 14) that is desired to prevent leakage from the package. It is not an integral multiple of the wavelength. For this reason, if the width of the vent hole is large, a high-frequency signal inside the package may leak to the outside and the EMI characteristics may deteriorate. Therefore, the amount of solder that regulates the width of the vent hole must be strictly controlled. In addition, since the allowable width of the variation in the width of the vent hole is reduced, it is a cause of a decrease in yield.

このように、本実施の形態にかかる高周波パッケージ及びその製造方法は、パッケージ内から外部への高周波信号の漏洩を防止できる。しかも、通気穴の幅の誤差が許容されるため、はんだ塗布時に厳密な工程管理が不要である。   As described above, the high frequency package and the manufacturing method thereof according to the present embodiment can prevent leakage of a high frequency signal from the inside of the package to the outside. In addition, since an error in the width of the vent hole is allowed, strict process control is not required during solder application.

上記実施の形態においては、金属蓋６が上面視略矩形状である場合を例としたが、これと異なる形状である場合でも、パッケージ内に発生する定常波の節となる位置に通気穴を配置すれば、パッケージ内からの電磁波の漏洩を防止する効果が得られる。   In the above-described embodiment, the case where the metal lid 6 has a substantially rectangular shape when viewed from above is taken as an example. However, even when the metal lid 6 has a different shape, a vent hole is arranged at a position that becomes a node of a standing wave generated in the package. If it does so, the effect which prevents the leakage of the electromagnetic waves from the inside of a package will be acquired.

以上のように、本発明にかかる高周波パッケージは、パッケージ内からの電磁波の漏洩を防止した通気穴を備えるため、高温・高湿の環境下での使用に適している。   As described above, the high-frequency package according to the present invention includes a vent hole that prevents leakage of electromagnetic waves from the inside of the package, and thus is suitable for use in a high-temperature and high-humidity environment.

１ 多層基板
２ 導体パターン
３ 通気穴形成用パターン切り欠き
４ ＭＭＩＣ
５ 金属蓋
６ 通気穴
７ はんだ DESCRIPTION OF SYMBOLS 1 Multilayer substrate 2 Conductor pattern 3 Vent hole formation pattern notch 4 MMIC
5 Metal lid 6 Vent hole 7 Solder

Claims (5)

回路基板と、
前記回路基板上に実装された高周波デバイスと、
前記高周波デバイスが実装された領域を前記回路基板上において囲う略環状であり、前記回路基板の表面が露出した不連続部を少なくとも一つ備えた導体層と、
前記回路基板との間にキャビティが形成されるような形状を有し、前記導体層との接合面が環状であり、上面視略矩形状である金属蓋と、
前記導体層と前記金属蓋とを接合し、前記金属蓋の接合面との間にはんだが存在しないことによって形成された通気穴を前記導体層の不連続部の上に備えたはんだ接合層とを有し、
前記通気穴は、前記金属蓋の端部からの距離が、前記キャビティからの漏洩防止の対象とする電磁波の半波長の整数倍の位置に形成されていることを特徴とする高周波パッケージ。 A circuit board;
A high-frequency device mounted on the circuit board;
A conductor layer having at least one discontinuous portion in which the surface of the circuit board is exposed, and is substantially annular surrounding the area where the high-frequency device is mounted on the circuit board;
A metal lid that has a shape such that a cavity is formed between the circuit board, a joint surface with the conductor layer is annular, and is substantially rectangular in top view;
A solder joint layer having a vent hole formed on the discontinuous portion of the conductor layer formed by joining the conductor layer and the metal lid and having no solder between the joint surface of the metal lid; Have
The high-frequency package according to claim 1, wherein the vent hole is formed at a position that is an integer multiple of a half wavelength of an electromagnetic wave to be prevented from leaking from the cavity. 前記高周波デバイスは、モノリシックマイクロ波集積回路であることを特徴とする請求項１記載の高周波パッケージ。   The high-frequency package according to claim 1, wherein the high-frequency device is a monolithic microwave integrated circuit. 前記キャビティからの漏洩防止の対象とする電磁波は、前記モノリシックマイクロ波集積回路において処理されるマイクロ波であることを特徴とする請求項２記載の高周波パッケージ。   3. The high frequency package according to claim 2, wherein the electromagnetic wave to be prevented from leaking from the cavity is a microwave processed in the monolithic microwave integrated circuit. 回路基板上に実装された高周波デバイスを納めるキャビティを有する高周波パッケージの製造方法であって、
前記回路基板上に、前記回路基板の表面が露出した不連続部を備えた略環状の導体層を形成する導体層形成工程と、
前記回路基板上に、前記高周波デバイスを実装する工程と、
前記導体層上にはんだを配置する工程と、
前記回路基板との間に前記キャビティが形成されるような形状を有し、前記導体層との接合面が環状であり、上面視略矩形状である金属蓋を、前記はんだを介して前記導体層に接合する接合工程とを有し、
前記導体層形成工程においては、前記接合工程において接合する前記金属蓋の端部との距離が、前記キャビティからの漏洩防止の対象とする電磁波の半波長の整数倍となるように、前記導体層に前記不連続部を設けることを特徴とする高周波パッケージの製造方法。 A method of manufacturing a high frequency package having a cavity for storing a high frequency device mounted on a circuit board,
On the circuit board, a conductor layer forming step of forming a substantially annular conductor layer having a discontinuous portion where the surface of the circuit board is exposed;
Mounting the high-frequency device on the circuit board;
Placing solder on the conductor layer;
A metal lid having a shape such that the cavity is formed between the circuit board, a bonding surface with the conductor layer being annular, and a substantially rectangular shape when viewed from above is connected to the conductor via the solder. A bonding step for bonding to the layer,
In the conductor layer forming step, the conductor layer is formed such that a distance from an end of the metal lid to be joined in the joining step is an integral multiple of a half wavelength of an electromagnetic wave to be prevented from leaking from the cavity. A method for manufacturing a high-frequency package, wherein the discontinuous portion is provided on the substrate. 前記高周波デバイスは、モノリシックマイクロ波集積回路であることを特徴とする請求項４記載の高周波パッケージの製造方法。   5. The method of manufacturing a high frequency package according to claim 4, wherein the high frequency device is a monolithic microwave integrated circuit.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017092395A (en) * 2015-11-16 2017-05-25 住友電工デバイス・イノベーション株式会社 Semiconductor device
JP2017092797A (en) * 2015-11-13 2017-05-25 セイコーエプソン株式会社 Atomic oscillator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017092797A (en) * 2015-11-13 2017-05-25 セイコーエプソン株式会社 Atomic oscillator
JP2017092395A (en) * 2015-11-16 2017-05-25 住友電工デバイス・イノベーション株式会社 Semiconductor device

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