JP2011211196A - 発光素子及びこれを備えたライトユニット - Google Patents
発光素子及びこれを備えたライトユニット Download PDFInfo
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- 239000000463 material Substances 0.000 claims description 19
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
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- 229920006375 polyphtalamide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
【解決手段】本発明による発光素子は、胴体と、第1カラー帯域の波長範囲内で第1メインピークを発光する第1発光ダイオードと、第1カラー帯域の波長範囲内で第2メインピークを発光する第2発光ダイオードと、上記胴体の上に上記第1発光ダイオード及び第2発光ダイオードのうち、少なくとも1つと電気的に連結された複数のリード電極と、を含み、上記第1発光ダイオードの第1メインピークと上記第2発光ダイオードの第2メインピークの間の中心ピークの差は上記第1カラー帯域の波長範囲を基準にして少なくとも75%の波長差を含む。
【選択図】図1
Description
本発明は、発光素子及びこれを備えたライトユニットに関するものである。
Claims (14)
- 胴体と、
第1カラー帯域の波長範囲内で第1メインピークを発光する第1発光ダイオードと、
第1カラー帯域の波長範囲内で第2メインピークを発光する第2発光ダイオードと、
前記胴体の上に前記第1発光ダイオード及び第2発光ダイオードのうち、少なくとも1つと電気的に連結された複数のリード電極と、を含み、
前記第1発光ダイオードの第1メインピークと前記第2発光ダイオードの第2メインピークとの間の中心ピークの差は前記第1カラー帯域の波長範囲を基準にして少なくとも75%の波長差を含むことを特徴とする、発光素子。 - 前記第1発光ダイオードの第1メインピークと前記第2発光ダイオードの第2メインピークの中心ピークの差は、前記第1カラー帯域の波長範囲内で少なくとも15nmの波長差を有することを特徴とする、請求項1に記載の発光素子。
- 前記第1発光ダイオードの第1メインピークは、前記第1カラー帯域の中心波長から短波長方向に7.5nm以上離隔されることを特徴とする、請求項1に記載の発光素子。
- 前記第2発光ダイオードの第2メインピークは、前記第1カラー帯域の中心波長から長波長方向に7.5nm以上離隔されることを特徴とする、請求項3に記載の発光素子。
- 前記胴体の上部にキャビティを含み、前記キャビティには前記第1及び第2発光ダイオード、及び前記複数のリード電極が配置されることを特徴とする、
前記キャビティに樹脂物を含むことを特徴とする、請求項1乃至4のうち何れか1項に記載の発光素子。 - 前記樹脂物には、緑色蛍光体、黄色蛍光体、及び赤色蛍光体のうち、少なくとも1つを含むことを特徴とする、請求項5に記載の発光素子。
- 前記発光素子は、前記第1及び第2発光ダイオードの間に配置された第3発光ダイオードを含むことを特徴とする、請求項1乃至4のうち何れか1項に記載の発光素子。
- 前記第3発光ダイオードから放出された第3メインピークの中心ピークは、前記第1及び第2メインピークの中心ピークの合計を平均した値と2.5nm以内の差を有することを特徴とする、請求項7に記載の発光素子。
- 前記第1発光ダイオード及び前記第2発光ダイオードは青色光を発光することを特徴とする、請求項1に記載の発光素子。
- 前記第1及び第2発光ダイオードは440〜460nmの波長範囲にある光を発光することを特徴とする、請求項9に記載の発光素子。
- 前記短波長は440nm以下であり、前記長波長は460nm以上の波長であることを特徴とする、請求項4に記載の発光素子。
- 前記第1発光ダイオードの第1メインピークの中心ピークは前記第1カラー帯域の中心波長より短波長にさらに近く離隔され、前記第2発光ダイオードの第2メインピークの中心ピークは前記第1カラー帯域の中心波長より長波長にさらに近く離隔されることを特徴とする、請求項9に記載の発光素子。
- 前記第1発光ダイオードの第1メインピークと前記第2発光ダイオードの第2メインピークとの間の中心ピークの差は15nm以上の差を含むことを特徴とする、請求項12に記載の発光素子。
- 基板と、
前記基板の上に配列された複数の発光素子と、を含み、
前記複数の発光素子のうち、少なくとも1つは請求項1の発光素子であって、
前記第1発光ダイオードの第1メインピークと前記第2発光ダイオードの第2メインピークの中心ピークの差は少なくとも15nmの差を含むことを特徴とする、ライトユニット。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100027405A KR100999809B1 (ko) | 2010-03-26 | 2010-03-26 | 발광 소자 및 이를 구비한 라이트 유닛 |
KR10-2010-0027405 | 2010-03-26 |
Publications (2)
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JP2011211196A true JP2011211196A (ja) | 2011-10-20 |
JP2011211196A5 JP2011211196A5 (ja) | 2012-03-15 |
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JP2011065438A Pending JP2011211196A (ja) | 2010-03-26 | 2011-03-24 | 発光素子及びこれを備えたライトユニット |
Country Status (6)
Country | Link |
---|---|
US (1) | US8132934B2 (ja) |
EP (1) | EP2369623A2 (ja) |
JP (1) | JP2011211196A (ja) |
KR (1) | KR100999809B1 (ja) |
CN (1) | CN102201504A (ja) |
TW (1) | TW201203504A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013135083A (ja) * | 2011-12-26 | 2013-07-08 | Toyoda Gosei Co Ltd | 発光装置 |
JP2014007355A (ja) * | 2012-06-27 | 2014-01-16 | Rohm Co Ltd | 半導体発光装置および照明装置 |
JP2014096505A (ja) * | 2012-11-09 | 2014-05-22 | Sharp Corp | バックライトおよびその製造方法 |
JP2017108184A (ja) * | 2012-01-31 | 2017-06-15 | シャープ株式会社 | バックライトおよび液晶表示装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130014256A (ko) * | 2011-07-29 | 2013-02-07 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 이용한 조명 시스템 |
US9395051B2 (en) * | 2012-04-13 | 2016-07-19 | Cree, Inc. | Gas cooled LED lamp |
US8757839B2 (en) | 2012-04-13 | 2014-06-24 | Cree, Inc. | Gas cooled LED lamp |
US9410687B2 (en) | 2012-04-13 | 2016-08-09 | Cree, Inc. | LED lamp with filament style LED assembly |
CN103545300B (zh) * | 2012-07-09 | 2016-07-06 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
TWI523277B (zh) * | 2013-07-12 | 2016-02-21 | White light emitting diode module with ultraviolet light | |
JP2015046445A (ja) * | 2013-08-27 | 2015-03-12 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
CN106322225B (zh) * | 2015-06-16 | 2019-05-10 | 群创光电股份有限公司 | 显示装置的背光源 |
US9825206B2 (en) * | 2016-02-25 | 2017-11-21 | Toyoda Gosei, Co., Ltd. | Light-emitting device |
TWI646651B (zh) * | 2017-01-26 | 2019-01-01 | 宏碁股份有限公司 | 發光二極體顯示器及其製造方法 |
TWI741799B (zh) * | 2020-09-18 | 2021-10-01 | 葳天科技股份有限公司 | 發光裝置 |
Citations (3)
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JP2002170999A (ja) * | 2000-12-04 | 2002-06-14 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
JP2006128456A (ja) * | 2004-10-29 | 2006-05-18 | Toyoda Gosei Co Ltd | 発光装置 |
JP2008034188A (ja) * | 2006-07-27 | 2008-02-14 | Asahi Rubber:Kk | 照明装置 |
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JP3840940B2 (ja) * | 2001-09-28 | 2006-11-01 | 株式会社日立製作所 | 画像表示装置 |
US7066623B2 (en) * | 2003-12-19 | 2006-06-27 | Soo Ghee Lee | Method and apparatus for producing untainted white light using off-white light emitting diodes |
KR100655894B1 (ko) * | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | 색온도 및 연색성이 우수한 파장변환 발광장치 |
KR20060061867A (ko) * | 2004-12-02 | 2006-06-08 | 삼성전자주식회사 | 광 발생 장치 및 이를 갖는 표시 장치 |
JP2006352030A (ja) | 2005-06-20 | 2006-12-28 | Arumo Technos Kk | 発光ダイオード |
KR100862446B1 (ko) | 2007-01-26 | 2008-10-08 | 삼성전기주식회사 | 백색 led 광원 모듈 |
JP5346448B2 (ja) | 2007-06-07 | 2013-11-20 | シャープ株式会社 | 発光装置およびそれを搭載したカメラ付き携帯電話 |
KR100891810B1 (ko) | 2007-11-06 | 2009-04-07 | 삼성전기주식회사 | 백색 발광 소자 |
CN101482235B (zh) * | 2009-01-22 | 2012-05-30 | 深圳市聚飞光电股份有限公司 | 色温可调整的高显色led灯及其制造方法 |
-
2010
- 2010-03-26 KR KR1020100027405A patent/KR100999809B1/ko active IP Right Grant
-
2011
- 2011-03-23 TW TW100109827A patent/TW201203504A/zh unknown
- 2011-03-24 JP JP2011065438A patent/JP2011211196A/ja active Pending
- 2011-03-24 US US13/070,616 patent/US8132934B2/en not_active Expired - Fee Related
- 2011-03-24 EP EP11159496A patent/EP2369623A2/en not_active Withdrawn
- 2011-03-28 CN CN2011100788270A patent/CN102201504A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002170999A (ja) * | 2000-12-04 | 2002-06-14 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
JP2006128456A (ja) * | 2004-10-29 | 2006-05-18 | Toyoda Gosei Co Ltd | 発光装置 |
JP2008034188A (ja) * | 2006-07-27 | 2008-02-14 | Asahi Rubber:Kk | 照明装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013135083A (ja) * | 2011-12-26 | 2013-07-08 | Toyoda Gosei Co Ltd | 発光装置 |
JP2017108184A (ja) * | 2012-01-31 | 2017-06-15 | シャープ株式会社 | バックライトおよび液晶表示装置 |
JP2014007355A (ja) * | 2012-06-27 | 2014-01-16 | Rohm Co Ltd | 半導体発光装置および照明装置 |
JP2014096505A (ja) * | 2012-11-09 | 2014-05-22 | Sharp Corp | バックライトおよびその製造方法 |
Also Published As
Publication number | Publication date |
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EP2369623A2 (en) | 2011-09-28 |
US20110235363A1 (en) | 2011-09-29 |
US8132934B2 (en) | 2012-03-13 |
KR100999809B1 (ko) | 2010-12-08 |
TW201203504A (en) | 2012-01-16 |
CN102201504A (zh) | 2011-09-28 |
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