JP2011210758A - ウェハ接合半導体装置の製造方法 - Google Patents
ウェハ接合半導体装置の製造方法 Download PDFInfo
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- JP2011210758A JP2011210758A JP2010074081A JP2010074081A JP2011210758A JP 2011210758 A JP2011210758 A JP 2011210758A JP 2010074081 A JP2010074081 A JP 2010074081A JP 2010074081 A JP2010074081 A JP 2010074081A JP 2011210758 A JP2011210758 A JP 2011210758A
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Abstract
【解決手段】第1のウェハ基板1と第2のウェハ基板2を接合するウェハ接合半導体装置の製造方法において、予め第1のウェハ基板1と第2のウェハ基板2のウェハ接合面側に、加熱時に接合機能を有する接合部材3および5を形成する第1の工程と、第1の工程により形成された前記接合部材の表面に、反応性を有する少なくとも2つの粉体材料を含んだフラックスペースト4を供給する第2の工程と、第2の工程により供給された前記フラックスペースト4の反応を開始させるための励起を行う第3の工程とを含む、ウェハ接合半導体装置の製造方法。
【選択図】図2
Description
次に、図6(g)(h)で第1のウェハ基板1と第2のウェハ基板2のウェハ合わせを行った後、外部励起6により、第1のウェハ基板1と第2のウェハ基板2の間に存在する反応性粉体材料含有フラックスペースト4の反応を開始させる。この際の反応熱により、第1のウェハ基板1上に形成された蒸着はんだを溶融させ、第1のウェハ基板1と第2のウェハ基板2を接合させる。なお、本実施例でも外部励起6としてレーザ励起を用いているが、前述の図4のように第1のウェハ基板1と第2のウェハ基板2の間に電圧印加することにより外部励起を印加する方法でもかまわない。
12・・・台形凹部
2・・・第2のウェハ基板
3・・・接合部材
4・・・反応性粉体材料含有フラックスペースト
41・・・反応合成物
42・・・フラックスペースト
43・・・第1の反応性粉体材料
44・・・第2の反応性粉体材料
5・・・金属メタライズ
6・・・外部励起
7・・・機能素子
Claims (12)
- 第1のウェハ基板と第2のウェハ基板を接合するウェハ接合半導体装置の製造方法において、予め第1のウェハ基板と第2のウェハ基板のウェハ接合面側に、加熱時に接合機能を有する接合部材を形成する第1の工程と、
第1の工程により形成された前記接合部材の表面に、反応性を有する少なくとも2つの粉体材料を含んだフラックスペーストを供給する第2の工程と、
第2の工程により供給された前記フラックスペーストの反応を開始させるための励起を行う第3の工程とを含むウェハ接合半導体装置の製造方法。 - 前記フラックスペーストは自己伝播合成反応を起こすことを特徴とする請求項1に記載のウェハ接合半導体装置の製造方法。
- 前記第3の工程では、レーザ光を照射することにより励起を行う請求項1または2のいずれかに記載のウェハ接合半導体装置の製造方法。
- 第1のウェハ基板の接合部材を形成していない面と、第2のウェハ基板の接合部材を形成していない面の間に電圧印加することにより、前記フラックスペーストの反応を開始させ、前記第1のウェハ基板と前記第2のウェハ基板を接合することを特徴とする請求項1または2のいずれかに記載のウェハ接合半導体装置の製造方法。
- 第1のウェハ基板と、
前記第1のウェハ基板上に搭載される機能素子と、
第2のウエハ基板とを備え、
前記第1のウェハ基板と前記第2のウェハ基板を接合することにより、前記機能素子が封止されるウェハ接合半導体装置の製造方法において、
前記第1のウェハ基板上の前記機能素子が搭載される箇所に、加熱時に接合機能を有する接合部材を形成する第1の工程と、
前記第1の工程により形成された前記接合部材の表面に、反応性を有する少なくとも2つの粉体材料を含んだフラックスペーストを供給する第2の工程と、
前記第2の工程により供給された前記フラックスペースト上に、前記機能素子を搭載する第3の工程と、
前記第3の工程により供給された前記フラックスペーストの反応を開始させるための励起を行う第4の工程とを含むウェハ接合半導体装置の製造方法。 - 前記第4の工程後に、前記第1のウェハ基板と前記第2のウェハ基板のウェハ接合面側に、加熱時に接合機能を有する接合部材を形成する第5の工程と、
前記第5の工程により形成された前記接合部材の表面に、前記フラックスペーストを供給する第6の工程と、
前記第6の工程により供給された前記フラックスペーストの反応を開始させるための励起を行う第7の工程とを含む請求項5に記載のウェハ接合半導体装置の製造方法。 - 前記機能素子は発光素子または受光素子であり、前記第2のウエハ基板は光を透過する材料であることを特徴とする請求項5または6のいずれかに記載のウエハ接合半導体装置の製造方法。
- 前記フラックスペーストは自己伝播合成反応を起こすことを特徴とする請求項5または6のいずれかに記載のウェハ接合半導体装置の製造方法。
- 前記第4の工程または前記第7の工程では、レーザ光を照射することにより励起を行う請求項5乃至8のいずれかに記載のウェハ接合半導体装置の製造方法。
- 第1のウェハ基板の接合部材を形成していない面と、第2のウェハ基板の接合部材を形成していない面の間に電圧印加することにより、前記フラックスペーストの反応を開始させ、前記第1のウェハ基板と前記第2のウェハ基板を接合することを特徴とする請求項5乃至8のいずれかに記載のウェハ接合半導体装置の製造方法。
- 前記反応性を有する少なくとも2つの粉体材料が、
アルミニウムとニッケル、
または、アルミニウムとチタン、
または、チタンと炭素、
であることを特徴とする
請求項1乃至10のいずれかに記載のウェハ接合半導体装置の製造方法。 - 前記加熱時に接合機能を有する接合部材として、蒸着はんだを用いていることを特徴とする請求項1乃至11のいずれかに記載のウェハ接合半導体装置の製造方法。
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