JP2011207629A - 低融点ガラス組成物及びそれを用いた導電性ペースト材料 - Google Patents
低融点ガラス組成物及びそれを用いた導電性ペースト材料 Download PDFInfo
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- JP2011207629A JP2011207629A JP2010073963A JP2010073963A JP2011207629A JP 2011207629 A JP2011207629 A JP 2011207629A JP 2010073963 A JP2010073963 A JP 2010073963A JP 2010073963 A JP2010073963 A JP 2010073963A JP 2011207629 A JP2011207629 A JP 2011207629A
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- 239000011521 glass Substances 0.000 title claims abstract description 56
- 239000000203 mixture Substances 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 4
- 239000012776 electronic material Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 19
- 229910052782 aluminium Inorganic materials 0.000 description 16
- 230000000694 effects Effects 0.000 description 8
- 239000000843 powder Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 238000007496 glass forming Methods 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Sustainable Energy (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
結晶Si太陽電池用の導電性ペーストにおいて、高い集電効率を得られるような無鉛導電性ペースト材料用の低融点ガラス組成物が望まれている。
【解決手段】質量%でSiO2を1〜15、B2O3を18〜30、Al2O3を0〜10、ZnOを25〜43、RO(MgO+CaO+SrO+BaO)を8〜30、R2O(Li2O+Na2O+K2O)を6〜17含むSiO2−B2O3−ZnO−RO−R2O系無鉛低融点ガラスを含むことを特徴とする低融点ガラス組成物及びそれを用いた導電性ペースト材料である。
【選択図】 図1
Description
この他にも、一般的な酸化物で表すCuO、TiO2、In2O3、Bi2O3、SnO2、TeO2などを加えてもよい。
前記低融点ガラスの30℃〜300℃における熱膨張係数が(80〜130)×10−7/℃、軟化点が400℃以上550℃以下であることを特徴とする導電性ペースト材料である。熱膨張係数が(80〜130)×10−7/℃を外れると電極形成時に剥離、基板の反り等の問題が発生する。好ましくは、(85〜125)×10−7/℃の範囲である。
まず、ガラス粉末は、実施例に記載した所定組成となるように各種無機原料を秤量、混合して原料バッチを作製する。この原料バッチを白金ルツボに投入し、電気加熱炉内で1000〜1300℃、1〜2時間で加熱溶融して表1の実施例1〜5、表2の比較例1〜4に示す組成のガラスを得た。ガラスの一部は型に流し込み、ブロック状にして熱物性(熱膨張係数、軟化点)測定用に供した。残余のガラスは急冷双ロール成形機にてフレーク状とし、粉砕装置で平均粒径1〜4μm、最大粒径10μm未満の粉末状に整粒した。
無鉛低融点ガラス組成および、各種試験結果を表に示す。
2 n型半導体シリコン層
3 反射防止膜
4 表面電極
5 アルミニウム電極層
6 BSF層
7 P+層
Claims (5)
- シリコン半導体基板を用いる太陽電池用の導電性ペーストに含まれる低融点ガラスにおいて、その組成が、実質的に鉛成分を含まず、質量%で、
SiO2 1〜15、
B2O3 18〜30、
Al2O3 0〜10、
ZnO 25〜43、
RO(MgO、CaO、SrO、BaOより選択される1種以上の合計) 8〜30、
及び、
R2O(Li2O、Na2O、K2Oより選択される1種以上の合計) 6〜17、を含むことを特徴とするSiO2−B2O3−ZnO−RO−R2O系無鉛低融点ガラス。 - 30℃〜300℃における熱膨張係数が(80〜130)×10−7/℃、軟化点が400℃以上550℃以下であることを特徴とする請求項1に記載の無鉛低融点ガラス。
- 請求項1または請求項2のいずれかの無鉛低融点ガラスを使用していることを特徴とする導電性ペースト。
- 請求項1または請求項2のいずれかの無鉛低融点ガラスを使用していることを特徴とする太陽電池素子。
- 請求項1または請求項2のいずれかの無鉛低融点ガラスを使用していることを特徴とする電子材料用基板。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010073963A JP5569094B2 (ja) | 2010-03-28 | 2010-03-28 | 低融点ガラス組成物及びそれを用いた導電性ペースト材料 |
PCT/JP2011/056526 WO2011122369A1 (ja) | 2010-03-28 | 2011-03-18 | 低融点ガラス組成物及びそれを用いた導電性ペースト材料 |
CN201180009596.6A CN102762509B (zh) | 2010-03-28 | 2011-03-18 | 低熔点玻璃组合物及使用其的导电性糊剂材料 |
TW100110466A TWI469944B (zh) | 2010-03-28 | 2011-03-25 | A low melting point glass composition and a conductive paste material using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010073963A JP5569094B2 (ja) | 2010-03-28 | 2010-03-28 | 低融点ガラス組成物及びそれを用いた導電性ペースト材料 |
Publications (2)
Publication Number | Publication Date |
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JP2011207629A true JP2011207629A (ja) | 2011-10-20 |
JP5569094B2 JP5569094B2 (ja) | 2014-08-13 |
Family
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Family Applications (1)
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JP2010073963A Expired - Fee Related JP5569094B2 (ja) | 2010-03-28 | 2010-03-28 | 低融点ガラス組成物及びそれを用いた導電性ペースト材料 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5569094B2 (ja) |
CN (1) | CN102762509B (ja) |
TW (1) | TWI469944B (ja) |
WO (1) | WO2011122369A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012108290A1 (ja) * | 2011-02-10 | 2012-08-16 | セントラル硝子株式会社 | 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 |
CN104402234A (zh) * | 2014-11-13 | 2015-03-11 | 无锡中洁能源技术有限公司 | 晶体硅太阳能电池正面银浆用玻璃粉及其制备方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103915127B (zh) * | 2013-01-03 | 2017-05-24 | 上海匡宇科技股份有限公司 | 用于表面高方阻硅基太阳能电池正面银浆及其制备方法 |
JP6398351B2 (ja) | 2013-07-25 | 2018-10-03 | セントラル硝子株式会社 | 蛍光体分散ガラス |
EP3134903B1 (de) * | 2014-04-25 | 2019-06-12 | CeramTec GmbH | Aluminiumpaste für dickfilmhybride |
CN110550864B (zh) * | 2019-09-29 | 2022-09-02 | 长沙新材料产业研究院有限公司 | 一种低膨胀系数绝缘介质浆料及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5637246A (en) * | 1979-08-29 | 1981-04-10 | Hitachi Ltd | Ferrite binding glass composition |
JP2002025337A (ja) * | 2000-07-10 | 2002-01-25 | Tdk Corp | 導電ペーストおよび外部電極とその製造方法 |
JP2007070196A (ja) * | 2005-09-09 | 2007-03-22 | Central Glass Co Ltd | 無鉛低融点ガラス |
WO2009052364A1 (en) * | 2007-10-18 | 2009-04-23 | E.I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices: multiple busbars |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1361199B1 (en) * | 2002-04-24 | 2008-01-09 | Central Glass Company, Limited | Lead-free low-melting glass |
EP1993144A4 (en) * | 2006-03-07 | 2011-05-11 | Murata Manufacturing Co | CONDUCTIVE PASTE AND SOLAR CELL |
CN101483207B (zh) * | 2009-01-07 | 2013-02-13 | 范琳 | 一种环保型硅太阳能电池正面栅线电极银导体浆料 |
-
2010
- 2010-03-28 JP JP2010073963A patent/JP5569094B2/ja not_active Expired - Fee Related
-
2011
- 2011-03-18 WO PCT/JP2011/056526 patent/WO2011122369A1/ja active Application Filing
- 2011-03-18 CN CN201180009596.6A patent/CN102762509B/zh not_active Expired - Fee Related
- 2011-03-25 TW TW100110466A patent/TWI469944B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5637246A (en) * | 1979-08-29 | 1981-04-10 | Hitachi Ltd | Ferrite binding glass composition |
JP2002025337A (ja) * | 2000-07-10 | 2002-01-25 | Tdk Corp | 導電ペーストおよび外部電極とその製造方法 |
JP2007070196A (ja) * | 2005-09-09 | 2007-03-22 | Central Glass Co Ltd | 無鉛低融点ガラス |
WO2009052364A1 (en) * | 2007-10-18 | 2009-04-23 | E.I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices: multiple busbars |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012108290A1 (ja) * | 2011-02-10 | 2012-08-16 | セントラル硝子株式会社 | 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 |
CN104402234A (zh) * | 2014-11-13 | 2015-03-11 | 无锡中洁能源技术有限公司 | 晶体硅太阳能电池正面银浆用玻璃粉及其制备方法 |
CN104402234B (zh) * | 2014-11-13 | 2016-09-21 | 海安建海新能源有限公司 | 晶体硅太阳能电池正面银浆用玻璃粉及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2011122369A1 (ja) | 2011-10-06 |
CN102762509A (zh) | 2012-10-31 |
CN102762509B (zh) | 2015-11-25 |
JP5569094B2 (ja) | 2014-08-13 |
TWI469944B (zh) | 2015-01-21 |
TW201141809A (en) | 2011-12-01 |
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