JP2011176229A - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
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- JP2011176229A JP2011176229A JP2010040638A JP2010040638A JP2011176229A JP 2011176229 A JP2011176229 A JP 2011176229A JP 2010040638 A JP2010040638 A JP 2010040638A JP 2010040638 A JP2010040638 A JP 2010040638A JP 2011176229 A JP2011176229 A JP 2011176229A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 151
- 239000006059 cover glass Substances 0.000 claims abstract description 104
- 125000006850 spacer group Chemical group 0.000 claims abstract description 37
- 238000005498 polishing Methods 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 238000001039 wet etching Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000000873 masking effect Effects 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 description 14
- 230000007547 defect Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】
カバーガラス基板10にサポート基板12を接合し、カバーガラス基板10のサポート基板12と反対側の表面を機械研磨し、サポート基板12の一部を除去し、カバーガラス基板10上に複数の枠状のスペーサ14を形成する。カバーガラス基板10をウェットエッチングにより所定の厚みまで薄型化し、カバーガラス基板10と固体撮像素子20が形成されたシリコンウエハ18とをスペーサ14を介して貼り合わせる。カバーガラス基板10を個片化し、シリコンウエハ18を個片化して固体撮像装置を製造する。
【選択図】 図3
Description
Claims (6)
- カバーガラス基板にサポート基板を接合する工程と、
前記カバーガラス基板の前記サポート基板と反対側の表面を機械研磨する工程と、
前記サポート基板の一部を除去し、前記カバーガラス基板上に複数の枠状のスペーサを形成する工程と、
前記カバーガラス基板をウェットエッチングにより所定の厚みまで薄型化する工程と、
前記カバーガラス基板と固体撮像素子が形成された半導体基板とをスペーサを介して貼り合わせる工程と、
前記カバーガラス基板を個片化する工程と、
前記半導体基板を個片化する工程と、
を有する固体撮像装置の製造方法。 - 請求項1記載の固体撮像装置の製造方法において、前記サポート基板がシリコン基板である固体撮像装置の製造方法。
- 請求項1又は2記載の固体撮像装置の製造方法において、前記カバーガラス基板の前記サポート基板と反対側の表面を機械研磨する工程は、前記カバーガラス基板の表面粗さRaを1nm以下とすることを含む固体撮像装置の製造方法。
- 請求項1〜3の何れか記載の固体撮像装置の製造方法において、前記カバーガラス基板上にスペーサを形成した後、前記カバーガラス基板をウェットエッチングする前に、前記スペーサの前記カバーガラス基板とは反対側にマスキングを施す工程をさらに含む固体撮像装置の製造方法。
- 請求項1〜4の何れか記載の固体撮像装置の製造方法において、前記カバーガラス基板上にスペーサを形成する工程は、前記サポート基板を機械研磨する工程を含む固体撮像装置の製造方法。
- 請求項1〜5の何れか記載の固体撮像装置の製造方法において、前記カバーガラス基板に前記サポート基板を接合する工程が、真空下で実施される固体撮像装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2010040638A JP5497476B2 (ja) | 2010-02-25 | 2010-02-25 | 固体撮像装置の製造方法 |
US12/979,205 US20110207257A1 (en) | 2010-02-25 | 2010-12-27 | Manufacturing method for a solid-state image pickup device |
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JP2010040638A JP5497476B2 (ja) | 2010-02-25 | 2010-02-25 | 固体撮像装置の製造方法 |
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JP2011176229A true JP2011176229A (ja) | 2011-09-08 |
JP5497476B2 JP5497476B2 (ja) | 2014-05-21 |
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JP2010040638A Expired - Fee Related JP5497476B2 (ja) | 2010-02-25 | 2010-02-25 | 固体撮像装置の製造方法 |
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JP (1) | JP5497476B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016012686A (ja) * | 2014-06-30 | 2016-01-21 | 凸版印刷株式会社 | 固体撮像装置の製造方法 |
JP2017187478A (ja) * | 2016-03-30 | 2017-10-12 | 株式会社ジャパンディスプレイ | 指紋センサ、指紋センサモジュール及び指紋センサの製造方法 |
US10963663B2 (en) | 2016-03-30 | 2021-03-30 | Japan Display Inc. | Fingerprint sensor |
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DE102011084949B4 (de) * | 2011-10-21 | 2016-03-31 | Osram Gmbh | Konverteranordnung, Verfahren zum Herstellen der Konverteranordnung und Beleuchtungsanordnung |
US8980676B2 (en) * | 2012-06-25 | 2015-03-17 | Raytheon Company | Fabrication of window cavity cap structures in wafer level packaging |
JP6270339B2 (ja) * | 2013-05-22 | 2018-01-31 | オリンパス株式会社 | 撮像装置、撮像装置の製造方法、及び内視鏡システム |
EP2955759B1 (en) * | 2014-06-11 | 2018-09-05 | ams AG | Semiconductor device comprising an emitter of radiation and a photosensor and appertaining production method |
CN104803340B (zh) * | 2015-04-09 | 2017-09-15 | 上海新微技术研发中心有限公司 | 基于硅‑玻璃键合的mems光学芯片的封装结构及封装方法 |
CN104909327B (zh) * | 2015-04-09 | 2017-03-08 | 上海新微技术研发中心有限公司 | 基于中间层键合的mems光学芯片的封装结构及封装方法 |
CN204760384U (zh) * | 2015-05-18 | 2015-11-11 | 华天科技(昆山)电子有限公司 | 高像素影像传感芯片的晶圆级封装结构 |
US11764117B2 (en) * | 2018-04-03 | 2023-09-19 | Corning Incorporated | Hermetically sealed optically transparent wafer-level packages and methods for making the same |
KR20220018698A (ko) * | 2020-08-07 | 2022-02-15 | 삼성전자주식회사 | 언더필이 구비된 이미지 센서 패키지 및 이를 포함하는 이미지 센서 모듈 |
CN114628612A (zh) * | 2022-03-15 | 2022-06-14 | 安徽熙泰智能科技有限公司 | 硅基oled微显示器及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09252100A (ja) * | 1996-03-18 | 1997-09-22 | Shin Etsu Handotai Co Ltd | 結合ウェーハの製造方法及びこの方法により製造される結合ウェーハ |
JP2004063772A (ja) * | 2002-07-29 | 2004-02-26 | Fuji Photo Film Co Ltd | 固体撮像装置およびその製造方法 |
JP2008047665A (ja) * | 2006-08-14 | 2008-02-28 | Fujifilm Corp | 固体撮像装置の製造方法、及び固体撮像装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6499354B1 (en) * | 1998-05-04 | 2002-12-31 | Integrated Sensing Systems (Issys), Inc. | Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices |
US7074638B2 (en) * | 2002-04-22 | 2006-07-11 | Fuji Photo Film Co., Ltd. | Solid-state imaging device and method of manufacturing said solid-state imaging device |
US7759197B2 (en) * | 2005-09-01 | 2010-07-20 | Micron Technology, Inc. | Method of forming isolated features using pitch multiplication |
JP2007087463A (ja) * | 2005-09-20 | 2007-04-05 | Toshiba Corp | 磁気記録媒体、その製造方法、及び磁気記録再生装置 |
-
2010
- 2010-02-25 JP JP2010040638A patent/JP5497476B2/ja not_active Expired - Fee Related
- 2010-12-27 US US12/979,205 patent/US20110207257A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09252100A (ja) * | 1996-03-18 | 1997-09-22 | Shin Etsu Handotai Co Ltd | 結合ウェーハの製造方法及びこの方法により製造される結合ウェーハ |
JP2004063772A (ja) * | 2002-07-29 | 2004-02-26 | Fuji Photo Film Co Ltd | 固体撮像装置およびその製造方法 |
JP2008047665A (ja) * | 2006-08-14 | 2008-02-28 | Fujifilm Corp | 固体撮像装置の製造方法、及び固体撮像装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016012686A (ja) * | 2014-06-30 | 2016-01-21 | 凸版印刷株式会社 | 固体撮像装置の製造方法 |
JP2017187478A (ja) * | 2016-03-30 | 2017-10-12 | 株式会社ジャパンディスプレイ | 指紋センサ、指紋センサモジュール及び指紋センサの製造方法 |
US10963663B2 (en) | 2016-03-30 | 2021-03-30 | Japan Display Inc. | Fingerprint sensor |
US11562595B2 (en) | 2016-03-30 | 2023-01-24 | Japan Display Inc. | Fingerprint sensor |
US11837012B2 (en) | 2016-03-30 | 2023-12-05 | Japan Display Inc. | Fingerprint sensor |
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JP5497476B2 (ja) | 2014-05-21 |
US20110207257A1 (en) | 2011-08-25 |
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