JP2011159783A - 裏面電極型太陽電池の製造方法、裏面電極型太陽電池および裏面電極型太陽電池モジュール - Google Patents
裏面電極型太陽電池の製造方法、裏面電極型太陽電池および裏面電極型太陽電池モジュール Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 90
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 90
- 239000010703 silicon Substances 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 238000009792 diffusion process Methods 0.000 claims abstract description 56
- 238000002161 passivation Methods 0.000 claims abstract description 53
- 239000012535 impurity Substances 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- -1 titanium alkoxide Chemical class 0.000 claims abstract description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010936 titanium Substances 0.000 claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 claims description 6
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 6
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 229920005672 polyolefin resin Polymers 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 description 14
- 239000011574 phosphorus Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000010306 acid treatment Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000002562 thickening agent Substances 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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Abstract
【解決手段】シリコン基板4の受光面に、シリコン基板4の導電型と同じ導電型になるような不純物を含む化合物、チタンアルコキシドおよびアルコールを少なくとも含む溶液を塗布し熱処理することにより受光面拡散層6と反射防止膜7とを形成する工程と、シリコン基板4の受光面に熱処理により受光面パッシベーション膜8を形成する工程とを有する裏面電極型太陽電池の製造方法。
【選択図】図3
Description
Claims (10)
- シリコン基板の受光面とは反対側の面にn型用電極とp型用電極とを有する裏面電極型太陽電池の製造方法において、
シリコン基板の受光面に、前記シリコン基板の導電型と同じ導電型になるような不純物を含む化合物、チタンアルコキシドおよびアルコールを少なくとも含む溶液を塗布し熱処理することにより受光面拡散層と反射防止膜とを形成する工程と、
前記シリコン基板の受光面に熱処理により受光面パッシベーション膜を形成する工程とを有することを特徴とする裏面電極型太陽電池の製造方法。 - 前記受光面パッシベーション膜が酸化シリコンであることを特徴とする請求項1に記載の裏面電極型太陽電池の製造方法。
- 前記受光面パッシベーション膜を形成する工程において、前記シリコン基板の裏面に裏面パッシベーション膜を同時に形成することを特徴とする請求項1または2に記載の裏面電極型太陽電池の製造方法。
- 前記受光面拡散層のシート抵抗が、30〜100Ω/□であることを特徴とする請求項1〜3のいずれかに記載の裏面電極型太陽電池の製造方法。
- 前記受光面パッシベーション膜の膜厚が、30nm〜200nmであることを特徴とする請求項1〜4のいずれかに記載の裏面電極型太陽電池の製造方法。
- シリコン基板の受光面とは反対側の面にn型用電極とp型用電極とを有する裏面電極型太陽電池において、
前記シリコン基板の受光面側に形成された、前記シリコン基板の導電型と同じ導電型で不純物濃度が前記シリコン基板よりも高い濃度である受光面拡散層と、
前記受光面拡散層の受光面上に形成された受光面パッシベーション膜と、
前記受光面パッシベーション膜の受光面上に形成された、前記シリコン基板の導電型と同じ導電型の不純物を含む酸化チタンである反射防止膜とを有する裏面電極型太陽電池。 - シリコン基板の受光面とは反対側の面にn型用電極とp型用電極とを有する裏面電極型太陽電池において、
前記シリコン基板の受光面側に形成された、前記シリコン基板の導電型と同じ導電型で不純物濃度が前記シリコン基板よりも高い濃度である受光面拡散層と、
前記受光面拡散層の受光面上に形成された受光面パッシベーション膜と、
前記受光面パッシベーション膜の受光面上の一部に形成された、前記シリコン基板の導電型と同じ導電型の不純物を含む酸化チタンである反射防止膜とを有する裏面電極型太陽電池。 - 前記反射防止膜に含まれる不純物がn型不純物であり、前記n型不純物はリン酸化物として15wt%〜35wt%含有することを特徴とする請求項6または7に記載の裏面電極型太陽電池。
- 請求項6〜8のいずれかに記載の裏面電極型太陽電池が複数配置された裏面電極型太陽電池モジュールであって、
前記裏面電極型太陽電池の受光面側に、封止樹脂、ガラスを順次有することを特徴とする裏面電極型太陽電池モジュール。 - 前記封止樹脂が、EVA(エチレンビニルアセテート)、シリコーン樹脂、ポリオレフフィン樹脂のいずれかであることを特徴とする請求項9に記載の裏面電極型太陽電池モジュール。
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JP2010020029A JP5215330B2 (ja) | 2010-02-01 | 2010-02-01 | 裏面電極型太陽電池の製造方法、裏面電極型太陽電池および裏面電極型太陽電池モジュール |
EP11737072A EP2533296A1 (en) | 2010-02-01 | 2011-01-27 | Process for production of back-electrode-type solar cell, back-electrode-type solar cell, and back-electrode-type solar cell module |
PCT/JP2011/051555 WO2011093360A1 (ja) | 2010-02-01 | 2011-01-27 | 裏面電極型太陽電池の製造方法、裏面電極型太陽電池および裏面電極型太陽電池モジュール |
US13/576,247 US20120325291A1 (en) | 2010-02-01 | 2011-01-27 | Method for producing back electrode type, solar cell, back electrode type solar cell and back electrode type solar cell module |
CN2011800079198A CN102742025A (zh) | 2010-02-01 | 2011-01-27 | 背面电极型太阳能电池的制造方法、背面电极型太阳能电池及背面电极型太阳能电池模块 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012077597A1 (ja) * | 2010-12-06 | 2012-06-14 | シャープ株式会社 | 裏面電極型太陽電池の製造方法および裏面電極型太陽電池 |
JP2013089832A (ja) * | 2011-10-20 | 2013-05-13 | Semiconductor Energy Lab Co Ltd | シリコン基板の加工方法 |
JP2013197587A (ja) * | 2012-03-19 | 2013-09-30 | Lg Electronics Inc | 太陽電池 |
JP2014239104A (ja) * | 2013-06-06 | 2014-12-18 | 信越化学工業株式会社 | 太陽電池セル、太陽電池モジュール及びその製造方法 |
JP2018093200A (ja) * | 2016-12-05 | 2018-06-14 | エルジー エレクトロニクス インコーポレイティド | 太陽電池の製造方法 |
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US10141457B2 (en) | 2012-03-19 | 2018-11-27 | Lg Electronics Inc. | Solar cell |
JP2014239104A (ja) * | 2013-06-06 | 2014-12-18 | 信越化学工業株式会社 | 太陽電池セル、太陽電池モジュール及びその製造方法 |
JP2018093200A (ja) * | 2016-12-05 | 2018-06-14 | エルジー エレクトロニクス インコーポレイティド | 太陽電池の製造方法 |
JP7182052B2 (ja) | 2016-12-05 | 2022-12-02 | エルジー エレクトロニクス インコーポレイティド | 太陽電池の製造方法 |
Also Published As
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WO2011093360A1 (ja) | 2011-08-04 |
US20120325291A1 (en) | 2012-12-27 |
CN102742025A (zh) | 2012-10-17 |
EP2533296A1 (en) | 2012-12-12 |
JP5215330B2 (ja) | 2013-06-19 |
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