JP2011157267A - 溶融した顆粒を用いてシリコンから成る単結晶を製造する方法 - Google Patents
溶融した顆粒を用いてシリコンから成る単結晶を製造する方法 Download PDFInfo
- Publication number
- JP2011157267A JP2011157267A JP2011021066A JP2011021066A JP2011157267A JP 2011157267 A JP2011157267 A JP 2011157267A JP 2011021066 A JP2011021066 A JP 2011021066A JP 2011021066 A JP2011021066 A JP 2011021066A JP 2011157267 A JP2011157267 A JP 2011157267A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- volume
- single crystal
- molten silicon
- molten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 75
- 239000010703 silicon Substances 0.000 title claims abstract description 75
- 239000013078 crystal Substances 0.000 title claims abstract description 50
- 239000008187 granular material Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 230000006698 induction Effects 0.000 claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims abstract description 40
- 238000002844 melting Methods 0.000 claims abstract description 8
- 230000008018 melting Effects 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 26
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 62
- 239000007788 liquid Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/26—Stirring of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/32—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
【解決手段】第1の誘導加熱コイル2によって、成長する単結晶と、シリコンから成る円錐状の管部分1の下端部との間に、溶融したシリコンの第1の体積9を形成し、プレート3の上方に配置された第2の誘導加熱コイル7によって、溶融したシリコンの第2の体積10を形成し、溶融したシリコンの第2の体積10のための通過開口が形成される程度まで管部分1の下端部を溶融させ、通過開口が、溶融したシリコンの第2の体積10がまだ存在しないか又は溶融したシリコンの第1の体積9の2倍よりも少ない時点で形成され、第1及び第2の体積9,10から溶融したシリコンを消費することによって、成長する単結晶にモノクリスタルシリコンを結晶させる。
【選択図】図1
Description
溶融したシリコンの第2の体積のための通過開口が形成されるような程度に、管部分の下端部を溶融させ、
第1及び第2の体積からの溶融したシリコンの消費により、成長する単結晶にモノクリスタルシリコンを結晶させることを含む。
Claims (4)
- 溶融した顆粒を用いてシリコンから成る単結晶を形成する方法において、
第1の誘導加熱コイルによって、成長する単結晶と、シリコンから成る円錐状の管部分の下端部との間に、溶融したシリコンの第1の体積を形成し、前記管部分が、下端部において閉鎖されており、かつシリコンから成る回転するプレートの中央開口を包囲しており、前記プレートの下方に前記管部分が延びており、前記第1の誘導加熱コイルが前記プレートの下方に配置されており、
プレートの上方に配置された第2の誘導加熱コイルによって、溶融したシリコンの第2の体積を形成し、
溶融したシリコンの第2の体積のための通過開口が形成される程度まで前記管部分の下端部を溶融させ、前記通過開口が、溶融したシリコンの第2の体積がまだ存在しないか又は溶融したシリコンの第1の体積の2倍よりも少ない時点で形成され、
第1及び第2の体積から溶融したシリコンを消費することによって、成長する単結晶にモノクリスタルシリコンを結晶させることを特徴とする、溶融した顆粒を用いてシリコンから成る単結晶を形成する方法。 - 前記管部分に入り込んだ第2の誘導加熱コイルの部分を下降させることによって、通過開口の形成を補助する、請求項1記載の方法。
- 前記プレートの上側と、前記管部分の内壁とからシリコンを溶融させることによって、溶融したシリコンの第2の体積の一部を形成する、請求項1又は2記載の方法。
- 単結晶の円錐形に延びた部分を結晶させる間又はその後に、プレートへ搬送された顆粒の溶融を開始する、請求項1から3までのいずれか1項記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010006724.5 | 2010-02-03 | ||
DE102010006724A DE102010006724B4 (de) | 2010-02-03 | 2010-02-03 | Verfahren zur Herstellung eines Einkristalls aus Silizium unter Verwendung von geschmolzenem Granulat |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011157267A true JP2011157267A (ja) | 2011-08-18 |
JP5216879B2 JP5216879B2 (ja) | 2013-06-19 |
Family
ID=43798190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011021066A Expired - Fee Related JP5216879B2 (ja) | 2010-02-03 | 2011-02-02 | 溶融した顆粒を用いてシリコンから成る単結晶を製造する方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US8454746B2 (ja) |
EP (1) | EP2354278B1 (ja) |
JP (1) | JP5216879B2 (ja) |
KR (1) | KR101323901B1 (ja) |
CN (1) | CN102140674B (ja) |
DE (1) | DE102010006724B4 (ja) |
DK (1) | DK2354278T3 (ja) |
SG (1) | SG173302A1 (ja) |
TW (1) | TWI449770B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180041723A (ko) * | 2015-08-20 | 2018-04-24 | 실트로닉 아게 | 실리콘으로 구성되는 입자형 재료의 열처리를 위한 방법, 실리콘으로 구성되는 입자형 재료, 및 실리콘으로 구성되는 단결정을 제조하는 방법 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012207505A1 (de) | 2012-05-07 | 2013-11-07 | Wacker Chemie Ag | Polykristallines Siliciumgranulat und seine Herstellung |
US9664448B2 (en) | 2012-07-30 | 2017-05-30 | Solar World Industries America Inc. | Melting apparatus |
DE102012213506A1 (de) * | 2012-07-31 | 2014-02-06 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium |
DE102012215677B3 (de) * | 2012-09-04 | 2013-10-10 | Siltronic Ag | Verfahren zum Herstellen eines Einkristalls aus Silizium |
DE102014207149A1 (de) | 2014-04-14 | 2015-10-29 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium |
DE102014210936B3 (de) * | 2014-06-06 | 2015-10-22 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial |
JP2022024897A (ja) | 2020-07-28 | 2022-02-09 | 株式会社ノベルクリスタルテクノロジー | 単結晶製造装置及び単結晶の製造方法 |
CN116288650B (zh) * | 2023-05-24 | 2023-08-29 | 苏州晨晖智能设备有限公司 | 以颗粒硅为原料的硅单晶生长装置和生长方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003226595A (ja) * | 2002-02-01 | 2003-08-12 | Wacker Siltronic Ag | 半導体材料から単結晶を製造する方法および装置、およびこの種の単結晶 |
JP2009215159A (ja) * | 2008-03-10 | 2009-09-24 | Siltronic Ag | 誘導加熱コイル及び半導体材料から成る細粒を溶融するための方法 |
JP2011093793A (ja) * | 2009-10-28 | 2011-05-12 | Siltronic Ag | 顆粒を再溶融させることによってシリコンから成る単結晶を製造するための装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4045278A (en) * | 1973-11-22 | 1977-08-30 | Siemens Aktiengesellschaft | Method and apparatus for floating melt zone of semiconductor crystal rods |
DE19538020A1 (de) * | 1995-10-12 | 1997-04-17 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium |
JP3644227B2 (ja) * | 1997-12-22 | 2005-04-27 | 信越半導体株式会社 | シリコン単結晶の製造方法及び製造装置 |
-
2010
- 2010-02-03 DE DE102010006724A patent/DE102010006724B4/de not_active Withdrawn - After Issue
-
2011
- 2011-01-12 EP EP11150764A patent/EP2354278B1/de not_active Not-in-force
- 2011-01-12 DK DK11150764.6T patent/DK2354278T3/da active
- 2011-01-18 US US13/008,053 patent/US8454746B2/en not_active Expired - Fee Related
- 2011-01-20 TW TW100102101A patent/TWI449770B/zh not_active IP Right Cessation
- 2011-01-27 CN CN201110032661.9A patent/CN102140674B/zh not_active Expired - Fee Related
- 2011-01-28 KR KR1020110008926A patent/KR101323901B1/ko active IP Right Grant
- 2011-02-01 SG SG2011007549A patent/SG173302A1/en unknown
- 2011-02-02 JP JP2011021066A patent/JP5216879B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003226595A (ja) * | 2002-02-01 | 2003-08-12 | Wacker Siltronic Ag | 半導体材料から単結晶を製造する方法および装置、およびこの種の単結晶 |
JP2009215159A (ja) * | 2008-03-10 | 2009-09-24 | Siltronic Ag | 誘導加熱コイル及び半導体材料から成る細粒を溶融するための方法 |
JP2011093793A (ja) * | 2009-10-28 | 2011-05-12 | Siltronic Ag | 顆粒を再溶融させることによってシリコンから成る単結晶を製造するための装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180041723A (ko) * | 2015-08-20 | 2018-04-24 | 실트로닉 아게 | 실리콘으로 구성되는 입자형 재료의 열처리를 위한 방법, 실리콘으로 구성되는 입자형 재료, 및 실리콘으로 구성되는 단결정을 제조하는 방법 |
JP2018523625A (ja) * | 2015-08-20 | 2018-08-23 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | 粒状シリコンの熱処理プロセス、粒状シリコン、およびシリコン単結晶の製造プロセス |
KR102069984B1 (ko) * | 2015-08-20 | 2020-01-23 | 실트로닉 아게 | 실리콘으로 구성되는 입자형 재료의 열처리를 위한 방법, 실리콘으로 구성되는 입자형 재료, 및 실리콘으로 구성되는 단결정을 제조하는 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR101323901B1 (ko) | 2013-10-30 |
DE102010006724A1 (de) | 2011-08-04 |
TW201127937A (de) | 2011-08-16 |
EP2354278A1 (de) | 2011-08-10 |
EP2354278B1 (de) | 2012-07-04 |
CN102140674B (zh) | 2014-01-01 |
US20110185963A1 (en) | 2011-08-04 |
CN102140674A (zh) | 2011-08-03 |
SG173302A1 (en) | 2011-08-29 |
DK2354278T3 (da) | 2012-09-24 |
TWI449770B (zh) | 2014-08-21 |
DE102010006724B4 (de) | 2012-05-16 |
JP5216879B2 (ja) | 2013-06-19 |
KR20110090794A (ko) | 2011-08-10 |
US8454746B2 (en) | 2013-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5216879B2 (ja) | 溶融した顆粒を用いてシリコンから成る単結晶を製造する方法 | |
JP4582149B2 (ja) | 単結晶製造装置 | |
JP6101368B2 (ja) | 冷却速度制御装置及びこれを含むインゴット成長装置 | |
JP6528178B2 (ja) | シリコン単結晶の製造方法 | |
US20030145781A1 (en) | Process and apparatus for producing a single crystal of semiconductor material | |
KR101294453B1 (ko) | 그래뉼을 재용융시킴으로써 실리콘으로 이루어진 단결정을 제조하는 방법 | |
US10006145B2 (en) | Liquid doping systems and methods for controlled doping of single crystal semiconductor material | |
KR20110099481A (ko) | 단결정 냉각장치 및 단결정 냉각장치를 포함하는 단결정 성장장치 | |
CN104024491B (zh) | 制造单晶硅的方法 | |
JP4432458B2 (ja) | 単結晶の製造方法 | |
JP2013133243A (ja) | 単結晶シリコンの製造方法 | |
JP5375636B2 (ja) | シリコン単結晶の製造方法 | |
DK2703525T3 (en) | A process for preparing a single crystal of silicon | |
CN110291230B (zh) | 通过fz法提拉单晶的方法和设备 | |
CN106591944B (zh) | 单晶硅锭及晶圆的形成方法 | |
JP2007031235A (ja) | 単結晶製造装置 | |
JP2019514836A (ja) | 単結晶シリコンの半導体ウェハを製造するための方法、単結晶シリコンの半導体ウェハを製造するための装置および単結晶シリコンの半導体ウェハ | |
JP5951132B2 (ja) | 溶融領域における単結晶の結晶化により単結晶を製造するための装置 | |
JP2009007228A (ja) | 球状結晶の製造方法及び製造装置 | |
JP2013184842A (ja) | シリコン単結晶の製造装置およびシリコン単結晶の製造方法 | |
JP2004010469A (ja) | 化合物半導体単結晶の成長方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110404 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20111024 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20111116 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20111116 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130205 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130304 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5216879 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160308 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees | ||
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |