JP2011103425A - Photoelectric converter - Google Patents

Photoelectric converter Download PDF

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JP2011103425A
JP2011103425A JP2009258711A JP2009258711A JP2011103425A JP 2011103425 A JP2011103425 A JP 2011103425A JP 2009258711 A JP2009258711 A JP 2009258711A JP 2009258711 A JP2009258711 A JP 2009258711A JP 2011103425 A JP2011103425 A JP 2011103425A
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photoelectric conversion
groove
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electrode
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JP5274432B2 (en
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Toshifumi Sugawara
利文 菅原
Tasuke Nishimura
太佑 西村
Ken Nishiura
憲 西浦
Norihiko Matsushima
徳彦 松島
Yosuke Inomata
洋介 猪股
Hisao Arimune
久雄 有宗
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Kyocera Corp
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectric converter with high photoelectric conversion efficiency. <P>SOLUTION: A photoelectric converter 21 includes: a substrate 1; a plurality of lower electrodes 2 provided on the substrate 1 and divided by a first groove P1; a photoelectric conversion layer 5 provided on the plurality of lower electrodes 2 and in the groove P1 and having a second groove P2 penetrating on the lower electrodes 2; an upper electrode 6 provided on the photoelectric conversion layer 5; a connecting conductor 7 provided in the second groove P2 and electrically connecting the upper electrode 6 and each lower electrode 2; and a light shielding layer 8 provided on the upper electrode 6 so as to cover the first groove P1 in a planar view of the upper electrode 6. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、複数の光電変換セルが集積された光電変換装置に関する。   The present invention relates to a photoelectric conversion device in which a plurality of photoelectric conversion cells are integrated.

太陽光発電等に使用される光電変換装置は、様々な種類のものがあるが、ＣＩＳ系（銅インジウムセレナイド系）に代表されるカルコパイライト系光電変換装置は比較的低コストで太陽電池モジュールの大面積化が容易なことから、研究開発が進められている。   There are various types of photoelectric conversion devices used for photovoltaic power generation and the like, but chalcopyrite photoelectric conversion devices represented by CIS (copper indium selenide) are relatively low cost solar cell modules. R & D is being promoted because it is easy to increase the area.

このカルコパイライト系光電変換装置は、光吸収層として二セレン化銅インジウムガリウム（ＣＩＧＳ）等のカルコゲン化合物半導体層（カルコパイライト系化合物半導体層）を備え、バッファ層として硫化カドミウム等の混晶化合物半導体を備えている。   This chalcopyrite photoelectric conversion device includes a chalcogen compound semiconductor layer (chalcopyrite compound semiconductor layer) such as copper indium gallium selenide (CIGS) as a light absorption layer, and a mixed crystal compound semiconductor such as cadmium sulfide as a buffer layer. It has.

カルコパイライト系光電変換装置の代表的なＣＩＧＳセルの従来の集積化素子製造方法は、まず青板ガラス上にモリブデンなどの金属をスパッタ成膜し下部電極を形成する。次にこの下部電極を短冊状に分離するようにレーザースクライブ加工等で溝を形成する。そして、この上に光吸収層とバッファ層を形成した後、上記下部電極の溝のすぐ横の位置でバッファ層と光吸収層を分離する溝を形成する。さらにこの上に上部電極を作製してから、上部電極とバッファ層と光吸収層を分離することによって光電変換装置となる。   In a conventional integrated element manufacturing method of a typical CIGS cell of a chalcopyrite photoelectric conversion device, a lower electrode is first formed by sputtering a metal such as molybdenum on a blue plate glass. Next, grooves are formed by laser scribing or the like so that the lower electrode is separated into strips. Then, after forming a light absorption layer and a buffer layer thereon, a groove for separating the buffer layer and the light absorption layer is formed at a position immediately next to the groove of the lower electrode. Further, after an upper electrode is formed thereon, a photoelectric conversion device is obtained by separating the upper electrode, the buffer layer, and the light absorption layer.

特開２０００−１２４４８８号公報JP 2000-124488 A

上記光電変換装置では、下部電極の溝部において、受光時の電荷発生にともなって光吸収層の抵抗率が低下し、下部電極間においてリーク電流が生じやすくなる。その結果、光電変換装置の光電変換効率が低下する傾向がある。一方、このようなリーク電流を抑制するために、溝の幅を大きくしようとすると、発電に寄与しない領域の面積が増加し、この場合も光電変換効率を高めることが困難となる。   In the photoelectric conversion device, in the groove portion of the lower electrode, the resistivity of the light absorption layer is reduced due to the generation of charges during light reception, and a leak current is likely to occur between the lower electrodes. As a result, the photoelectric conversion efficiency of the photoelectric conversion device tends to decrease. On the other hand, if an attempt is made to increase the width of the groove in order to suppress such a leakage current, the area of a region that does not contribute to power generation increases, and in this case as well, it is difficult to increase the photoelectric conversion efficiency.

本発明はこのような問題に鑑みなされたものであり、その目的は光電変換効率の高い光電変換装置を提供することにある。   This invention is made | formed in view of such a problem, The objective is to provide a photoelectric conversion apparatus with high photoelectric conversion efficiency.

本発明の光電変換装置に係る一実施形態は、基板と、前記基板上に設けられ、第１の溝によって分割された複数の下部電極と、前記複数の下部電極上および前記第１の溝内に設けられ、前記下部電極上で貫通した第２の溝を有する光電変換層と、前記光電変換層上に設けられた上部電極と、前記第２の溝内に設けられ、前記上部電極と前記下部電極とを電気的に接続する接続導体と、前記上部電極を平面視して前記第１の溝を覆うように前記上部電極上に設けられた遮光層と、を具備することを特徴とする。   One embodiment of the photoelectric conversion device of the present invention includes a substrate, a plurality of lower electrodes provided on the substrate and divided by a first groove, the plurality of lower electrodes, and in the first groove. A photoelectric conversion layer having a second groove penetrating on the lower electrode, an upper electrode provided on the photoelectric conversion layer, provided in the second groove, and the upper electrode and the A connection conductor that electrically connects the lower electrode; and a light shielding layer provided on the upper electrode so as to cover the first groove when the upper electrode is viewed in plan. .

このような構成により、第１の溝付近に設けられた光電変換層の受光による抵抗率の低下を抑制することができる。よって、第１の溝の幅、すなわち下部電極間の間隔を小さくしてもリーク電流を抑制しながら光電変換に寄与する領域を大きくすることができ、光電変換効率の高い光電変換装置とすることができる。   With such a configuration, it is possible to suppress a decrease in resistivity due to light reception of the photoelectric conversion layer provided in the vicinity of the first groove. Therefore, even if the width of the first groove, that is, the interval between the lower electrodes is reduced, a region contributing to photoelectric conversion can be increased while suppressing leakage current, and a photoelectric conversion device having high photoelectric conversion efficiency can be obtained. Can do.

上記光電変換装置において好ましくは、前記遮光層は導電性であり前記接続導体に電気的に接続されている。このような構成により、遮光層が光電変換層で生じた電荷を接続導体へ良好に電荷移動させることができ、光電変換効率をより高めることができる。   In the photoelectric conversion device, preferably, the light shielding layer is conductive and electrically connected to the connection conductor. With such a configuration, the charge generated in the photoelectric conversion layer by the light shielding layer can be favorably transferred to the connection conductor, and the photoelectric conversion efficiency can be further increased.

上記光電変換装置において好ましくは、前記上部電極上に集電電極が設けられており、該集電電極が前記遮光層に電気的に接続されている。このような構成により、光電変換層で生じた電荷の接続導体への電荷移動をより良好にすることができる。   In the photoelectric conversion device, preferably, a collecting electrode is provided on the upper electrode, and the collecting electrode is electrically connected to the light shielding layer. With such a configuration, it is possible to improve charge transfer of charges generated in the photoelectric conversion layer to the connection conductor.

上記光電変換装置において好ましくは、前記集電電極、前記遮光層および前記接続導体が導電ペーストで一体的に形成されている。このような構成により、集電電極、遮光層および接続導体を容易に形成できるとともに電気的接続信頼性を高めることができる。   In the photoelectric conversion device, preferably, the current collecting electrode, the light shielding layer, and the connection conductor are integrally formed of a conductive paste. With such a configuration, the current collecting electrode, the light shielding layer, and the connection conductor can be easily formed and the electrical connection reliability can be increased.

本発明によれば、リーク電流を抑制して光電変換効率の高い光電変換装置とすることができる。   ADVANTAGE OF THE INVENTION According to this invention, it can be set as a photoelectric conversion apparatus with a high photoelectric conversion efficiency by suppressing leak current.

本発明の光電変換装置の実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the photoelectric conversion apparatus of this invention. 図１の光電変換装置の平面図である。It is a top view of the photoelectric conversion apparatus of FIG. 図１、図２の光電変換装置の切断面線Ａ−Ａで切断した断面図である。It is sectional drawing cut | disconnected by the cutting surface line AA of the photoelectric conversion apparatus of FIG. 1, FIG. 図１、図２の光電変換装置の切断面線Ｂ−Ｂで切断した断面図である。It is sectional drawing cut | disconnected by the cut surface line BB of the photoelectric conversion apparatus of FIG. 1, FIG. 図１の光電変換装置の製造方法の一例を示す工程ごとの断面図である。It is sectional drawing for every process which shows an example of the manufacturing method of the photoelectric conversion apparatus of FIG.

図１は本発明に係る光電変換装置の構造の一例を示す斜視図であり、図２はその平面図である。また、図３は、図１、図２の光電変換装置の切断面線Ａ−Ａで切断した断面図であり、図４は、切断面線Ｂ−Ｂで切断した断面図である。   FIG. 1 is a perspective view showing an example of the structure of a photoelectric conversion device according to the present invention, and FIG. 2 is a plan view thereof. 3 is a cross-sectional view taken along the cutting plane line AA of the photoelectric conversion device of FIGS. 1 and 2, and FIG. 4 is a cross-sectional view cut along the cutting plane line BB.

光電変換装置２１は、基板１と、下部電極２と、光電変換層５と、上部電極６と、接続導体７と、遮光層８とを含んで構成される。本実施形態において光電変換層５は、カルコパイライト系化合物半導体を用いた光電変換体として公知の構造である、光吸収層３とこれにヘテロ接合されたバッファ層４とを具備する例を示しているが、これに限定されない。光電変換層５は、下部電極２側からバッファ層４および光吸収層３を積層したものであってもよく、異なる導電型の半導体層がホモ接合されたものであってもよい。また、上部電極６は半導体層から成るものも含み、いわゆる窓層と呼ばれるものも含む。   The photoelectric conversion device 21 includes a substrate 1, a lower electrode 2, a photoelectric conversion layer 5, an upper electrode 6, a connection conductor 7, and a light shielding layer 8. In the present embodiment, an example in which the photoelectric conversion layer 5 includes a light absorption layer 3 and a buffer layer 4 heterojunction to the light absorption layer 3, which is a known structure as a photoelectric conversion body using a chalcopyrite compound semiconductor, is shown. However, it is not limited to this. The photoelectric conversion layer 5 may be a laminate of the buffer layer 4 and the light absorption layer 3 from the lower electrode 2 side, or may be a homojunction of semiconductor layers of different conductivity types. Further, the upper electrode 6 includes a semiconductor layer and includes what is called a window layer.

図１〜４において、光電変換セル２０が複数並べて形成され、光電変換装置２１を構成している。そして、光電変換セル２０は、光吸収層３およびバッファ層４をまたがるように設けられた接続導体７によって、上部電極６と、隣接する光電変換セル２０の下部電極２が延出された部位とが電気的に接続されている。この構成により、隣接する光電変換セル２０同士が直列接続されている。なお、一つの光電変換セル２０内において、接続導体７は光吸収層３およびバッファ層４をまたがるように設けられており、上部電極６と下部電極２とで挟まれた光吸収層３とバッファ層４とで光電変換が行なわれる。   1 to 4, a plurality of photoelectric conversion cells 20 are formed side by side to constitute a photoelectric conversion device 21. The photoelectric conversion cell 20 includes an upper electrode 6 and a portion where the lower electrode 2 of the adjacent photoelectric conversion cell 20 is extended by the connection conductor 7 provided so as to straddle the light absorption layer 3 and the buffer layer 4. Are electrically connected. With this configuration, adjacent photoelectric conversion cells 20 are connected in series. In one photoelectric conversion cell 20, the connection conductor 7 is provided so as to straddle the light absorption layer 3 and the buffer layer 4, and the light absorption layer 3 and the buffer sandwiched between the upper electrode 6 and the lower electrode 2. Photoelectric conversion is performed with the layer 4.

基板１は、光吸収層３を支持するためのものである。基板１に用いられる材料としては、ガラス、セラミックス、樹脂および金属等が挙げられる。基板１としては、例えば、厚さ１〜３ｍｍ程度の青板ガラス（ソーダライムガラス）を用いることができる。   The substrate 1 is for supporting the light absorption layer 3. Examples of the material used for the substrate 1 include glass, ceramics, resin, and metal. As the substrate 1, for example, blue plate glass (soda lime glass) having a thickness of about 1 to 3 mm can be used.

下部電極２は、モリブデン（Ｍｏ）、アルミニウム（Ａｌ）、チタン（Ｔｉ）、タンタル（Ｔａ）または金（Ａｕ）等の金属またはこれらの金属積層構造体が用いられる。下部電極２は、基板１上にスパッタリング法または蒸着法等で厚さ０．２〜１μｍ程度に形成される。下部電極２は第１の溝Ｐ１を介して複数のものが並んで設けられている。   The lower electrode 2 is made of a metal such as molybdenum (Mo), aluminum (Al), titanium (Ti), tantalum (Ta), or gold (Au), or a laminated structure of these metals. The lower electrode 2 is formed on the substrate 1 to a thickness of about 0.2 to 1 μm by sputtering or vapor deposition. A plurality of lower electrodes 2 are provided side by side through the first groove P1.

光吸収層３は、例えば、Ｉ-III-VI化合物半導体やII-VI化合物半導体がある。I-III-VI化合物半導体とは、Ｉ-Ｂ族元素（１１族元素ともいう）とIII-Ｂ族元素（１３族元素ともいう）とVI-Ｂ族元素（１６族元素ともいう）との化合物半導体であり、カルコパイライト構造を有し、カルコパイライト系化合物半導体と呼ばれる（ＣＩＳ系化合物半導体ともいう）。II-VI化合物半導体とは、II-Ｂ族（１２族元素ともいう）とVI-Ｂ族元素との化合物半導体である。光電変換効率を高めるという観点からは、カルコパイライト系化合物半導体であるＩ-III-VI化合物半導体を用いることが好ましい。   Examples of the light absorption layer 3 include an I-III-VI compound semiconductor and an II-VI compound semiconductor. An I-III-VI compound semiconductor is composed of a group IB element (also referred to as a group 11 element), a group III-B element (also referred to as a group 13 element), and a group VI-B element (also referred to as a group 16 element). It is a compound semiconductor, has a chalcopyrite structure, and is called a chalcopyrite compound semiconductor (also called a CIS compound semiconductor). The II-VI compound semiconductor is a compound semiconductor of a group II-B (also referred to as a group 12 element) and a group VI-B element. From the viewpoint of increasing the photoelectric conversion efficiency, it is preferable to use an I-III-VI compound semiconductor that is a chalcopyrite compound semiconductor.

I-III-VI化合物半導体としては、例えば、二セレン化銅インジウム（ＣｕＩｎＳｅ２）、二セレン化銅インジウム・ガリウム（Ｃｕ（Ｉｎ，Ｇａ）Ｓｅ２）、二セレン・イオウ化銅インジウム・ガリウム（Ｃｕ（Ｉｎ，Ｇａ）（Ｓｅ，Ｓ）２）、二イオウ化銅インジウム・ガリウム（Ｃｕ（Ｉｎ，Ｇａ）Ｓ２）又は薄膜の二セレン・イオウ化銅インジウム・ガリウム層を表面層として有する二セレン化銅インジウム・ガリウム等の多元化合物半導体薄膜がある。 As the I-III-VI compound semiconductor, for example, copper indium diselenide (CuInSe 2 ), copper indium diselenide / gallium (Cu (In, Ga) Se 2 ), diselen selenide / copper indium / gallium (gallium ( Cu (In, Ga) (Se, S) 2 ), copper indium gallium disulfide (Cu (In, Ga) S 2 ), or a thin film of selenium disulfide, copper indium gallium indium gallium as a surface layer. There are multi-element compound semiconductor thin films such as copper indium selenide and gallium.

光吸収層３は、ｐ形の導電形を有する厚さ１〜３μｍ程度の薄膜で、光吸収層３がI-III-VI化合物半導体から成る場合、その表面にヘテロ接合を形成するためのバッファ層４を有することが好ましい。バッファ層４としては、硫化カドミウム（ＣｄＳ）、硫化インジウム（ＩｎＳ）、硫化亜鉛（ＺｎＳ）等の化合物半導体がある。   The light absorption layer 3 is a thin film having a p-type conductivity and a thickness of about 1 to 3 μm. When the light absorption layer 3 is made of an I-III-VI compound semiconductor, a buffer for forming a heterojunction on the surface thereof. It is preferable to have the layer 4. Examples of the buffer layer 4 include compound semiconductors such as cadmium sulfide (CdS), indium sulfide (InS), and zinc sulfide (ZnS).

上部電極６は、いわゆる窓層と呼ばれるものを含み、ｎ形の導電形を有する禁制帯幅が広く且つ透明で低抵抗の厚さ１〜２μｍ程度の酸化亜鉛（ＺｎＯ）やアルミニウムやボロン、ガリウム、インジウム、フッ素などを含んだ酸化亜鉛との化合物、錫を含んだ酸化インジウム（ＩＴＯ）や酸化錫（ＳｎＯ２）などからなる金属酸化物半導体薄膜である。窓層は光電変換装置２１を構成する一方の電極として見なすことができるため、本実施形態では上部電極６とみなしている。このような窓層に加えてさらに透明導電膜を形成してもよく、窓層と透明導電膜を合わせて上部電極６と見なしてもよい。 The upper electrode 6 includes what is called a window layer, which has an n-type conductivity type, wide forbidden band width, transparent, low resistance, and about 1 to 2 μm thick zinc oxide (ZnO), aluminum, boron, gallium. A metal oxide semiconductor thin film made of a compound with zinc oxide containing indium, fluorine, etc., indium oxide containing tin (ITO), tin oxide (SnO 2 ), or the like. Since the window layer can be regarded as one electrode constituting the photoelectric conversion device 21, it is regarded as the upper electrode 6 in the present embodiment. In addition to such a window layer, a transparent conductive film may be further formed, and the window layer and the transparent conductive film may be combined and regarded as the upper electrode 6.

接続導体７は、光吸収層３およびバッファ層４を貫通して、上部電極６と下部電極２とを電気的に接続する導体である。接続導体７は、光吸収層３およびバッファ層４を貫通する第２の溝Ｐ２内に形成された導体であり、例えば、蒸着やスパッタ等で形成した金属膜や導電ペーストを固化したもの等から成る。なお、固化というのは、導電ペーストに用いるバインダーが熱可塑性樹脂である場合の熔融後の固化状態を含み、バインダーが熱硬化性樹脂や光硬化性樹脂等の硬化性樹脂である場合の硬化後の状態をも含む。接続信頼性を高めるという観点からは、Ａｇ等の金属粉を樹脂バインダー等に分散させた導電ペーストを用いることが好ましい。   The connection conductor 7 is a conductor that penetrates the light absorption layer 3 and the buffer layer 4 and electrically connects the upper electrode 6 and the lower electrode 2. The connection conductor 7 is a conductor formed in the second groove P2 penetrating the light absorption layer 3 and the buffer layer 4, and is formed from, for example, a solidified metal film or conductive paste formed by vapor deposition or sputtering. Become. Solidification includes the solidified state after melting when the binder used in the conductive paste is a thermoplastic resin, and after curing when the binder is a curable resin such as a thermosetting resin or a photocurable resin. The state of is also included. From the viewpoint of improving connection reliability, it is preferable to use a conductive paste in which a metal powder such as Ag is dispersed in a resin binder or the like.

上部電極６上には遮光層８が形成されている。遮光層８は上部電極６を平面視したときに上記第１の溝Ｐ１を覆うように設けられている。これにより、第１の溝Ｐ１付近に設けられた光電変換層５に光が照射されるのを抑制し、第１の溝Ｐ１付近に設けられた光吸収層３の受光による抵抗率の低下を抑制することができる。よって、第１の溝Ｐ１の幅、すなわち下部電極２間の間隔を小さくしてもリーク電流を抑制しながら光電変換に寄与する領域を大きくすることができ、光電変換効率の高い光電変換装置２１とすることができる。   A light shielding layer 8 is formed on the upper electrode 6. The light shielding layer 8 is provided so as to cover the first groove P1 when the upper electrode 6 is viewed in plan. As a result, the photoelectric conversion layer 5 provided in the vicinity of the first groove P1 is suppressed from being irradiated with light, and the resistivity is reduced due to light reception by the light absorption layer 3 provided in the vicinity of the first groove P1. Can be suppressed. Therefore, even if the width of the first groove P1, that is, the interval between the lower electrodes 2 is reduced, the region contributing to photoelectric conversion can be increased while suppressing the leakage current, and the photoelectric conversion device 21 with high photoelectric conversion efficiency can be obtained. It can be.

遮光層８は、第１の溝Ｐ１付近に設けられた光電変換層５の受光による抵抗率の低下を良好に抑制するという観点からは、上部電極６を平面視したときに第１の溝Ｐ１の幅の５０％以上を覆うように設けられていることが好ましい。より好ましくは８０％以上覆うのがよい。   From the viewpoint of satisfactorily suppressing a decrease in resistivity due to light reception of the photoelectric conversion layer 5 provided in the vicinity of the first groove P1, the light shielding layer 8 has the first groove P1 when the upper electrode 6 is viewed in plan view. It is preferable to be provided so as to cover 50% or more of the width. More preferably, it is good to cover 80% or more.

遮光層８は、光電変換層５の光電変換を行なうことのできる波長領域の光を遮光するものであればどのような材料でもよい。なお、上記遮光とは、光を完全に遮るものでなくとも一部の光を遮るものであればよい。好ましくは、光電変換層５の光電変換を行なうことのできる波長領域の光を照射したときに、透過率が５０％以下、より好ましくは３０％以下であるのがよい。   The light shielding layer 8 may be any material as long as it shields light in a wavelength region where the photoelectric conversion of the photoelectric conversion layer 5 can be performed. In addition, the said light-shielding should just block a part of light even if it does not block light completely. Preferably, the transmittance is 50% or less, more preferably 30% or less when irradiated with light in a wavelength region where photoelectric conversion of the photoelectric conversion layer 5 can be performed.

遮光層８の材料は特に限定されず、有機材料、無機材料およびこれらの複合体のいずれでもよく、例えば、黒色のエポキシ樹脂や、金属粉等を含む導電ペースト等が挙げられる。好ましくは、遮光層８は導電性であり、接続導体７に電気的に接続されているのがよい。このような構成により、遮光層８が光電変換層５で生じた電荷を接続導体７へ良好に電荷移動させることができ、光電変換効率をより高めることができる。このような遮光層８および接続導体７は、例えば、金属粉等の導体をバインダーに分散させた導電ペーストを用いて同時に塗布形成することにより形成される。このように導電ペーストで同時に塗布形成することにより、工程を簡略化できる。   The material of the light shielding layer 8 is not particularly limited, and may be any of an organic material, an inorganic material, and a composite thereof. Examples thereof include a black epoxy resin and a conductive paste containing a metal powder. Preferably, the light shielding layer 8 is electrically conductive and is electrically connected to the connection conductor 7. With such a configuration, the light generated by the light shielding layer 8 in the photoelectric conversion layer 5 can be favorably transferred to the connection conductor 7, and the photoelectric conversion efficiency can be further increased. Such a light shielding layer 8 and the connection conductor 7 are formed, for example, by simultaneously applying and forming using a conductive paste in which a conductor such as metal powder is dispersed in a binder. By simultaneously applying and forming the conductive paste in this way, the process can be simplified.

また、遮光層８は、第１の溝Ｐ１の直上だけに限らず、光電変換装置２１の受光面に対する斜めからの光入射を考慮し、第１の溝Ｐ１よりも外側に延在されていてもよい。   Further, the light shielding layer 8 is not limited to the position directly above the first groove P1, and is extended outward from the first groove P1 in consideration of oblique light incidence on the light receiving surface of the photoelectric conversion device 21. Also good.

上部電極６上には、集電電極９を設けてもよい。集電電極９は、例えば、図１、図２に示すように、光電変換セル２０の一端から接続導体７にかけて線状に形成されている。これにより、光電変換層５の光電変換により生じた電荷を、上部電極６を介して集電電極９に集電し、これを接続導体７を介して隣接する光電変換セル２０に良好に導電することができる。よって、集電電極９が設けられていることにより、上部電極６を薄くしても光電変換層５で発生した電荷を効率よく取り出すことができる。その結果、発電効率を高めることができる。   A collecting electrode 9 may be provided on the upper electrode 6. For example, as shown in FIGS. 1 and 2, the collector electrode 9 is formed in a linear shape from one end of the photoelectric conversion cell 20 to the connection conductor 7. Thereby, the electric charge generated by the photoelectric conversion of the photoelectric conversion layer 5 is collected to the current collecting electrode 9 through the upper electrode 6, and is electrically conducted to the adjacent photoelectric conversion cell 20 through the connection conductor 7. be able to. Therefore, by providing the current collecting electrode 9, even if the upper electrode 6 is thinned, the charge generated in the photoelectric conversion layer 5 can be taken out efficiently. As a result, power generation efficiency can be increased.

集電電極９は光吸収層３への光を遮るのを抑制するとともに良好な導電性を有するという観点からは、５０〜４００μｍの幅を有するのが好ましい。また、集電電極９は、枝分かれした複数の分岐部を有していてもよい。   The collector electrode 9 preferably has a width of 50 to 400 μm from the viewpoint of suppressing light from being blocked to the light absorption layer 3 and having good conductivity. The current collecting electrode 9 may have a plurality of branched portions.

集電電極９は、例えば、Ａｇ等の金属粉を樹脂バインダー等に分散させた導電ペーストをパターン状に印刷し、これを乾燥し、固化することによって形成することができる。   The current collecting electrode 9 can be formed by, for example, printing a conductive paste in which a metal powder such as Ag is dispersed in a resin binder or the like in a pattern, drying it, and solidifying it.

好ましくは、遮光層８は導電性であり、遮光層８が接続導体７および集電電極９に電気的に接続されているのがよい。このような構成により、光電変換層５で生じた電荷の接続導体７への電荷移動をより良好にすることができる。このような集電電極９、遮光層８および接続導体７は、導電ペーストで一体的に形成されているのがよい。このような構成により、集電電極９、遮光層８および接続導体７を容易に形成できるとともに電気的接続信頼性を高めることができる。   Preferably, the light shielding layer 8 is conductive, and the light shielding layer 8 is electrically connected to the connection conductor 7 and the current collecting electrode 9. With such a configuration, it is possible to improve charge transfer of charges generated in the photoelectric conversion layer 5 to the connection conductor 7. The current collecting electrode 9, the light shielding layer 8, and the connection conductor 7 are preferably formed integrally with a conductive paste. With such a configuration, the current collecting electrode 9, the light shielding layer 8, and the connection conductor 7 can be easily formed and the electrical connection reliability can be increased.

また、遮光層８は、光電変換層５の光電変換を行なうことのできる波長領域の光を反射するものが好ましい。このような構成により、光電変換装置２１の受光面（遮光層８が形成されている側の主面）に、エチレンビニルアセテート樹脂等の封止材を介してガラス基板等の保護部材を設けてモジュール化した際、遮光層８の表面で反射した光を、光電変換装置２１と封止材との界面、あるいは封止材とガラス基板との界面で再度反射させ、光電変換層５上に入射させることにより、光入射量を増加させ、光電変換効率をより高めることが可能となる。このような遮光層８は、例えば、アルミニウムなどの光反射率の高い金属を蒸着法などにより、遮光層８の表面に形成することにより形成できる。   Moreover, the light shielding layer 8 preferably reflects light in a wavelength region where the photoelectric conversion of the photoelectric conversion layer 5 can be performed. With such a configuration, a protective member such as a glass substrate is provided on the light receiving surface of the photoelectric conversion device 21 (the main surface on the side where the light shielding layer 8 is formed) via a sealing material such as ethylene vinyl acetate resin. When modularized, the light reflected by the surface of the light shielding layer 8 is reflected again at the interface between the photoelectric conversion device 21 and the sealing material, or the interface between the sealing material and the glass substrate, and is incident on the photoelectric conversion layer 5. As a result, the amount of incident light can be increased, and the photoelectric conversion efficiency can be further increased. Such a light shielding layer 8 can be formed, for example, by forming a metal having high light reflectance such as aluminum on the surface of the light shielding layer 8 by vapor deposition or the like.

光電変換装置２１の作製について、図５に工程ごとの断面図で示す。まず、図５（ａ）に示すように、洗浄した基板１の略全面に下部電極２をスパッタ法などを用いて成膜し、成膜したこの下部電極２をＹＡＧレーザーなどを用いて第１の溝Ｐ１を形成して下部電極２をパターニングする。   Production of the photoelectric conversion device 21 is shown in cross-sectional views for each step in FIG. First, as shown in FIG. 5A, a lower electrode 2 is formed on substantially the entire surface of the cleaned substrate 1 using a sputtering method or the like, and the formed lower electrode 2 is first processed using a YAG laser or the like. The lower electrode 2 is patterned by forming the groove P1.

その後、図５（ｂ）に示すように、このパターンを形成した下部電極２上に光吸収層３をスパッタ法や蒸着法、印刷法などを用いて成膜する。その後、図５（ｃ）に示すように、光吸収層３上にバッファ層４を溶液成長法（ＣＢＤ法）などを用いて成膜する。さらに、バッファ層４上に上部電極６を、スパッタ法や有機金属気相成長法（ＭＯＣＶＤ法）などを用いて成膜する。   Thereafter, as shown in FIG. 5B, the light absorption layer 3 is formed on the lower electrode 2 on which this pattern is formed by using a sputtering method, a vapor deposition method, a printing method, or the like. Thereafter, as shown in FIG. 5C, the buffer layer 4 is formed on the light absorption layer 3 by using a solution growth method (CBD method) or the like. Further, the upper electrode 6 is formed on the buffer layer 4 by sputtering, metal organic chemical vapor deposition (MOCVD), or the like.

その後、図５（ｄ）に示すように、光吸収層３とバッファ層４と上部電極６とを、メカニカルスクライビングして第２の溝Ｐ２および第３の溝Ｐ３を形成することによりパターニングする。第２の溝Ｐ２は、例えば、下部電極２に設けられた第１の溝Ｐ１より０．１〜１．０ｍｍ程度離間して設けられる。また、第３の溝Ｐ３は、第２の溝Ｐ２から０．１〜１．０ｍｍ程度離間して設けられる。このように光吸収層３の形成後、バッファ層４および上部電極６を続けて形成し、その後、第２の溝Ｐ２を形成すると、バッファ層４が良好な状態で上部電極６が形成されることとなり、バッファ層４と上部電極６との電気的な接続を良好にすることができる。その結果、光電変換効率を高めることができる。すなわち、バッファ層４を形成後、第２の溝Ｐ２の形成を行い、その後、上部電極６を形成すると、第２の溝Ｐ２の形成時に、メカニカルスクライビングで発生する削りカスなどでバッファ層４の表面の汚染などが生じ、バッファ層４表面が劣化しやすくなるが、上記のようにバッファ層４の形成に続けて上部電極６を形成することにより、劣化を抑制できる。   Then, as shown in FIG.5 (d), the light absorption layer 3, the buffer layer 4, and the upper electrode 6 are mechanically scribed and patterned by forming the 2nd groove | channel P2 and the 3rd groove | channel P3. The second groove P2 is provided, for example, at a distance of about 0.1 to 1.0 mm from the first groove P1 provided in the lower electrode 2. Further, the third groove P3 is provided to be separated from the second groove P2 by about 0.1 to 1.0 mm. After forming the light absorption layer 3 in this way, the buffer layer 4 and the upper electrode 6 are formed continuously, and then the second groove P2 is formed. Thus, the upper electrode 6 is formed with the buffer layer 4 in a good state. Thus, the electrical connection between the buffer layer 4 and the upper electrode 6 can be improved. As a result, the photoelectric conversion efficiency can be increased. That is, after forming the buffer layer 4, the second groove P <b> 2 is formed, and then the upper electrode 6 is formed. Contamination of the surface or the like occurs, and the surface of the buffer layer 4 is likely to deteriorate. However, the deterioration can be suppressed by forming the upper electrode 6 following the formation of the buffer layer 4 as described above.

この第２の溝Ｐ２および第３の溝Ｐ３の幅は、例えば、４０〜１０００μｍ程度である。このような幅の第２の溝Ｐ２および第３の溝Ｐ３は、４０〜５０μｍ程度のスクライブ幅のスクライブ針を用いてピッチをずらしながら連続して数回にわたりスクライブすることにより、あるいは、スクライブ針の先端形状を所定の幅に広げスクライブすることにより、あるいは、２本以上のスクライブ針を当接又は近接した状態で固定し、１回〜数回のスクライブを行うことにより形成可能である。   The width of the second groove P2 and the third groove P3 is, for example, about 40 to 1000 μm. The second groove P2 and the third groove P3 having such a width are scribed by continuously scribing several times while shifting the pitch using a scribe needle having a scribe width of about 40 to 50 μm, or a scribe needle It can be formed by expanding the tip shape to a predetermined width or by scribing once or several times with two or more scribing needles fixed in contact or close to each other.

その後、図５（ｅ）に示すように、上部電極６上および第２の溝Ｐ２内に、銀ペーストなどの導電ペーストを印刷することにより集電電極９、遮光層８（図示せず）および接続導体７を形成する。   After that, as shown in FIG. 5 (e), a conductive paste such as a silver paste is printed on the upper electrode 6 and in the second groove P2, thereby collecting the collecting electrode 9, the light shielding layer 8 (not shown), and A connection conductor 7 is formed.

このようにして、裏面側から基板１、下部電極２、光吸収層３、バッファ層４、上部電極６、遮光層８の順に積層した構造の単位セルである光電変換セル２０が構成される。そして、光電変換装置２１は、この光電変換セル２０が複数、電気的に接続され集積化された構造を有している。   Thus, the photoelectric conversion cell 20 which is a unit cell having a structure in which the substrate 1, the lower electrode 2, the light absorption layer 3, the buffer layer 4, the upper electrode 6, and the light shielding layer 8 are laminated in this order from the back side is configured. The photoelectric conversion device 21 has a structure in which a plurality of the photoelectric conversion cells 20 are electrically connected and integrated.

なお、本発明は上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内で種々の変更を施すことは何等差し支えない。   It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention.

１；基板
２；下部電極
３；光吸収層
４；バッファ層
５；光電変換層
６；上部電極
７；接続導体
８；遮光層
９；集電電極
２１；光電変換装置
Ｐ１；第１の溝
Ｐ２；第２の溝
Ｐ３；第３の溝 DESCRIPTION OF SYMBOLS 1; Substrate 2; Lower electrode 3; Light absorption layer 4; Buffer layer 5; Photoelectric conversion layer 6; Upper electrode 7; Connection conductor 8; Second groove P3; third groove

Claims (4)

基板と、
前記基板上に設けられ、第１の溝によって分割された複数の下部電極と、
前記複数の下部電極上および前記第１の溝内に設けられ、前記下部電極上で貫通した第２の溝を有する光電変換層と、
前記光電変換層上に設けられた上部電極と、
前記第２の溝内に設けられ、前記上部電極と前記下部電極とを電気的に接続する接続導体と、
前記上部電極を平面視して前記第１の溝を覆うように前記上部電極上に設けられた遮光層と、
を具備することを特徴とする光電変換装置。 A substrate,
A plurality of lower electrodes provided on the substrate and divided by a first groove;
A photoelectric conversion layer provided on the plurality of lower electrodes and in the first groove, and having a second groove penetrating on the lower electrode;
An upper electrode provided on the photoelectric conversion layer;
A connection conductor provided in the second groove and electrically connecting the upper electrode and the lower electrode;
A light shielding layer provided on the upper electrode so as to cover the first groove in plan view of the upper electrode;
A photoelectric conversion device comprising: 前記遮光層は導電性であり前記接続導体に電気的に接続されていることを特徴とする請求項１記載の光電変換装置。   The photoelectric conversion device according to claim 1, wherein the light shielding layer is electrically conductive and is electrically connected to the connection conductor. 前記上部電極上に集電電極が設けられており、該集電電極が前記遮光層に電気的に接続されていることを特徴とする請求項２記載の光電変換装置。   The photoelectric conversion device according to claim 2, wherein a current collecting electrode is provided on the upper electrode, and the current collecting electrode is electrically connected to the light shielding layer. 前記集電電極、前記遮光層および前記接続導体が導電ペーストで一体的に形成されていることを特徴とする請求項３記載の光電変換装置。   4. The photoelectric conversion device according to claim 3, wherein the current collecting electrode, the light shielding layer, and the connection conductor are integrally formed of a conductive paste.
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JP2014523226A (en) * 2011-06-28 2014-09-08 サン−ゴバン グラス フランス Method for quickly stabilizing the rated output of thin-film solar modules
US11588061B2 (en) 2017-09-15 2023-02-21 Idemitsu Kosan Co., Ltd. Photoelectric conversion module and method for manufacturing photoelectric conversion module

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JP2014523226A (en) * 2011-06-28 2014-09-08 サン−ゴバン グラス フランス Method for quickly stabilizing the rated output of thin-film solar modules
JP2013012565A (en) * 2011-06-29 2013-01-17 Kyocera Corp Photoelectric conversion module
JP2013026339A (en) * 2011-07-19 2013-02-04 Fujifilm Corp Thin-film solar cell and manufacturing method thereof
US11588061B2 (en) 2017-09-15 2023-02-21 Idemitsu Kosan Co., Ltd. Photoelectric conversion module and method for manufacturing photoelectric conversion module

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