JP2011086758A - Light-emitting device and method of manufacturing the same - Google Patents

Light-emitting device and method of manufacturing the same Download PDF

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JP2011086758A
JP2011086758A JP2009238224A JP2009238224A JP2011086758A JP 2011086758 A JP2011086758 A JP 2011086758A JP 2009238224 A JP2009238224 A JP 2009238224A JP 2009238224 A JP2009238224 A JP 2009238224A JP 2011086758 A JP2011086758 A JP 2011086758A
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light emitting
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JP4996660B2 (en
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Akihide Shibata
晃秀 柴田
Satoru Negishi
哲 根岸
Satoshi Morishita
敏 森下
Kenji Komiya
健治 小宮
Hiroshi Iwata
浩 岩田
Akira Takahashi
明 高橋
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Sharp Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device capable of normally emitting a light, even if the direction of the light-emitting element is interchanged with respect to relevant electrodes capable of suppressing the manufacturing cost, and to provide a method for manufacturing the device. <P>SOLUTION: In a filament-shaped light-emitting element 5 of the light-emitting device, a P-type first region 6 and a P-type third region 8 are respectively arranged on both sides of an N-type second region 7. Accordingly, even if respective connections of the first and third regions 6, 8 of the filament-shaped light-emitting element 5 to a first and third electrodes 1, 3 are interchanged, since respective diode polarities with respect to the first and third electrodes 1, 3 are not interchanged, normal light emission becomes possible. Hence, the manufacturing process is allowed to have respective connections of the first and third regions 6, 8 to the first and third electrodes 1, 3 exchanged; and even if the connections become opposite, neither the mark nor the shape for identifying the direction of the filament-shaped light-emitting element 5 becomes necessary, and the manufacturing process can be simplified and the manufacturing cost is suppressed. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

この発明は、製造コストを抑制可能な発光装置およびその製造方法に関する。   The present invention relates to a light emitting device capable of suppressing manufacturing costs and a method for manufacturing the same.

従来、図７に示すように、半導体ナノワイヤー１１４を利用した発光ダイオード装置１００が提案されている(特許文献１(特開２００８−２８３１９１号公報)参照)。この発光ダイオード装置１００は、半導体基板１１１、この半導体基板１１１の上面で互いに対向して配置された第１および第２半導体突出部１１２,１１３、上記第１半導体突出部１１２と第２半導体突出部１１３との間に懸架された半導体ナノワイヤー１１４を備えている。また、この発光ダイオード装置１００は、上記第１,第２半導体突出部１１２,１１３の上面に形成された第１,第２電極１１５,１１６を備えている。また、上記第１半導体突出部１１２とこの第１半導体突出部１１２から延びた半導体ナノワイヤー１１４の一部１１４ａとはＰ型にドーピングされており、第２半導体突出部１１３と第２半導体突出部１１３から延びた半導体ナノワイヤー１１４の残りの一部１１４ｂとは、Ｎ型にドーピングされている。   Conventionally, as shown in FIG. 7, a light-emitting diode device 100 using a semiconductor nanowire 114 has been proposed (see Patent Document 1 (Japanese Patent Laid-Open No. 2008-283191)). The light emitting diode device 100 includes a semiconductor substrate 111, first and second semiconductor protrusions 112 and 113 that are arranged to face each other on the upper surface of the semiconductor substrate 111, the first semiconductor protrusion 112, and the second semiconductor protrusion. The semiconductor nanowire 114 is suspended between the semiconductor 113 and the semiconductor nanowire 114. The light emitting diode device 100 further includes first and second electrodes 115 and 116 formed on the upper surfaces of the first and second semiconductor protrusions 112 and 113. The first semiconductor protrusion 112 and the part 114a of the semiconductor nanowire 114 extending from the first semiconductor protrusion 112 are doped in a P-type, and the second semiconductor protrusion 113 and the second semiconductor protrusion The remaining part 114 b of the semiconductor nanowire 114 extending from 113 is doped N-type.

ところで、上記従来の発光ダイオード装置１００では、第１電極１１５と第２電極１１６に対して、半導体ナノワイヤー１１４のＰ型ドーピングされた一部１１４ａとＮ型ドーピングされた一部１１４ｂの接続が入れ替わると正常に発光しなくなる。よって、上記発光ダイオード装置１００では、製造工程において、上記第１,第２電極１１５,１１６に対するＰ型,Ｎ型ドーピングされた一部１１４ａ,１１４ｂの接続が逆にならないように極性を合わせる必要があるので、特に発光ダイオードのサイズが小さい場合に製造工程を簡略化し難くて製造コストの上昇を招く。   By the way, in the conventional light emitting diode device 100, the connection of the P-type doped part 114 a and the N-type doped part 114 b of the semiconductor nanowire 114 is switched with respect to the first electrode 115 and the second electrode 116. When it does not emit light normally. Therefore, in the light emitting diode device 100, it is necessary to adjust the polarity so that the connection of the P-type and N-type doped portions 114a and 114b to the first and second electrodes 115 and 116 is not reversed in the manufacturing process. Therefore, it is difficult to simplify the manufacturing process especially when the size of the light-emitting diode is small, leading to an increase in manufacturing cost.

特開２００８−２８３１９１号公報JP 2008-283191 A

そこで、この発明の課題は、電極に対する発光素子の向きが入れ替わっても正常に発光可能であり、製造コストを抑制可能な発光装置およびその製造方法を提供することにある。   Therefore, an object of the present invention is to provide a light emitting device that can normally emit light even when the direction of the light emitting element with respect to the electrode is switched, and can reduce the manufacturing cost, and a method for manufacturing the light emitting device.

上記課題を解決するため、この発明の発光装置は、
基板上に形成された第１の電極と、
上記基板上に形成された第２の電極と、
上記基板上に形成された第３の電極と、
第１導電型の第１の領域と第２導電型の第２の領域と第１導電型の第３の領域とを有すると共に上記第１,第２,第３の領域が上記第１,第２,第３の領域の順に並んだ棒状発光素子と
を備え、
上記第１の領域が上記第１の電極または第３の電極の一方に接続され、上記第２の領域が上記第２の電極に接続され、上記第３の領域が上記第１の電極または第３の電極の他方に接続され、
さらに、上記第１の電極または第３の電極の一方から上記第１の領域と第２の領域を順に経由して上記第２の電極に電流が流れる第１の通電方向と、上記第２の電極から上記第２の領域と第１の領域を順に経由して上記第１の電極または第３の電極の一方に電流が流れる第２の通電方向とのうちのいずれか一方の通電方向に通電されるか、もしくは、上記第１の電極または第３の電極の他方から上記第３の領域と第２の領域を順に経由して上記第２の電極に電流が流れる第３の通電方向と、上記第２の電極から上記第２の領域と第３の領域を順に経由して上記第１の電極または第３の電極の他方に電流が流れる第４の通電方向とのうちのいずれか一方の通電方向に通電されることを特徴としている。 In order to solve the above problems, a light-emitting device of the present invention includes:
A first electrode formed on a substrate;
A second electrode formed on the substrate;
A third electrode formed on the substrate;
A first conductivity type first region, a second conductivity type second region, and a first conductivity type third region, and the first, second, and third regions are the first and second regions; A rod-shaped light emitting element arranged in the order of 2, 3rd region,
The first region is connected to one of the first electrode or the third electrode, the second region is connected to the second electrode, and the third region is connected to the first electrode or the second electrode. Connected to the other of the three electrodes,
Furthermore, a first energization direction in which a current flows from one of the first electrode or the third electrode to the second electrode through the first region and the second region in order, and the second electrode Energization in one energization direction of the second energization direction in which current flows from the electrode to one of the first electrode or the third electrode through the second region and the first region in order. Or a third energization direction in which a current flows from the other of the first electrode or the third electrode to the second electrode through the third region and the second region in order, One of a fourth energization direction in which a current flows from the second electrode to the other of the first electrode and the third electrode through the second region and the third region in order. It is characterized by being energized in the energizing direction.

この発明の発光装置によれば、上記棒状発光素子の第２導電型の第２の領域の両側に第１導電型の第１の領域と第１導電型の第３の領域とが配置されている。よって、上記第１,第３の電極に対する棒状発光素子の第１,第３の領域の接続が入れ替わっても第１,第３の電極に対するダイオード極性が入れ替わらないから、正常に発光可能になる。したがって、製造工程で第１,第３の電極に対する第１,第３の領域の接続が反対になってもよく、棒状発光素子の方向性を識別するためのマークや形状も不必要となり、製造工程を簡略化でき製造コストを抑えることができる。   According to the light emitting device of the present invention, the first conductivity type first region and the first conductivity type third region are arranged on both sides of the second conductivity type second region of the rod-like light emitting element. Yes. Therefore, even if the connection of the first and third regions of the rod-like light emitting element with respect to the first and third electrodes is switched, the diode polarity with respect to the first and third electrodes is not switched, so that normal light emission is possible. . Therefore, the connection of the first and third regions to the first and third electrodes may be reversed in the manufacturing process, and the mark and shape for identifying the directionality of the rod-like light emitting element are unnecessary, and the manufacturing process is performed. The process can be simplified and the manufacturing cost can be reduced.

また、一実施形態の発光装置は、基板上に形成された第１の電極と、
上記基板上に形成された第２の電極と、
上記基板上に形成された第３の電極と、
第１導電型の第１の領域と第２導電型の第２の領域と第１導電型の第３の領域とを有すると共に上記第１,第２,第３の領域が上記第１,第２,第３の領域の順に並んだ棒状発光素子とを備え、
上記第１の領域が上記第１の電極または第３の電極の一方に接続され、上記第２の領域が上記第２の電極に接続され、上記第３の領域が上記第１の電極または第３の電極の他方に接続され、
さらに、上記第１の電極または第３の電極の一方から上記第１の領域と第２の領域を順に経由して上記第２の電極に電流が流れると共に上記第１の電極または第３の電極の他方から上記第３の領域と第２の領域を順に経由して上記第２の電極に電流が流れる第１の通電方向と、上記第２の電極から上記第２の領域と第１の領域を順に経由して上記第１の電極または第３の電極の一方に電流が流れると共に上記第２の電極から上記第２の領域と第３の領域を順に経由して上記１の電極または第３の電極の他方に電流が流れる第２の通電方向とのうちのいずれか一方の通電方向に通電されることを特徴としている。 In one embodiment, a light emitting device includes a first electrode formed on a substrate,
A second electrode formed on the substrate;
A third electrode formed on the substrate;
A first conductivity type first region, a second conductivity type second region, and a first conductivity type third region, and the first, second, and third regions are the first and second regions; A rod-shaped light emitting element arranged in the order of 2, 3rd region,
The first region is connected to one of the first electrode or the third electrode, the second region is connected to the second electrode, and the third region is connected to the first electrode or the second electrode. Connected to the other of the three electrodes,
In addition, a current flows from one of the first electrode or the third electrode to the second electrode through the first region and the second region in order, and the first electrode or the third electrode. A first energization direction in which a current flows from the other electrode to the second electrode through the third region and the second region in order, and the second region and the first region from the second electrode. Current flows to one of the first electrode or the third electrode through the first electrode and the first electrode or the third electrode from the second electrode through the second region and the third region in order. It is characterized in that it is energized in one of the energization directions of the second energization direction in which current flows in the other electrode.

この実施形態の発光装置によれば、上記棒状発光素子の第２導電型の第２の領域の両側に第１導電型の第１の領域と第１導電型の第３の領域とが配置されている。よって、上記第１,第３の電極に対する棒状発光素子の第１,第３の領域の接続が入れ替わっても第１,第３の電極に対するダイオード極性が入れ替わらないから、正常に発光可能になる。したがって、製造工程で第１,第３の電極に対する第１,第３の領域の接続が反対になってもよく、棒状発光素子の方向性を識別するためのマークや形状も不必要となり、製造工程を簡略化でき製造コストを抑えることができる。   According to the light emitting device of this embodiment, the first conductivity type first region and the first conductivity type third region are arranged on both sides of the second conductivity type second region of the rod-like light emitting element. ing. Therefore, even if the connection of the first and third regions of the rod-like light emitting element with respect to the first and third electrodes is switched, the diode polarity with respect to the first and third electrodes is not switched, so that normal light emission is possible. . Therefore, the connection of the first and third regions to the first and third electrodes may be reversed in the manufacturing process, and the mark and shape for identifying the directionality of the rod-like light emitting element are unnecessary, and the manufacturing process is performed. The process can be simplified and the manufacturing cost can be reduced.

また、一実施形態の発光装置では、上記第１の領域の一端部と上記第２の領域の他端部とが接合されていると共に上記第２の領域の一端部と上記第３の領域の他端部とが接合されており、
上記第１の領域の他端部が上記第１の電極または第３の電極の一方に接続されていると共に上記第３の領域の一端部が上記第１の電極または第３の電極の他方に接続されている。 In one embodiment, the one end of the first region and the other end of the second region are joined, and the one end of the second region and the third region are connected. The other end is joined,
The other end of the first region is connected to one of the first electrode or the third electrode, and one end of the third region is connected to the other of the first electrode or the third electrode. It is connected.

この実施形態の発光装置によれば、上記棒状発光素子を、第１,第２,第３の領域が順に接合された棒状として、棒状発光素子の構造を簡略化できる。   According to the light emitting device of this embodiment, the structure of the bar light emitting element can be simplified by using the bar light emitting element as a bar shape in which the first, second, and third regions are joined in order.

また、一実施形態の発光装置では、上記棒状発光素子は、
上記第１の領域と上記第３の領域とが棒状に連なって構成されていると共に上記第２の領域を貫通しているコア部と、
上記第２の領域から構成されていると共に上記コア部の外周面を被覆するシェル部とを備え、
上記シェル部の両端から上記コア部の上記第１の領域と第３の領域が露出している。 In one embodiment, the rod-like light emitting element is
A core part configured such that the first region and the third region are connected in a rod shape and penetrating the second region;
A shell portion configured from the second region and covering an outer peripheral surface of the core portion;
The first region and the third region of the core portion are exposed from both ends of the shell portion.

この実施形態の発光装置によれば、上記棒状発光素子は、第１導電型の第１,第３の領域によるコア部の外周面と第２導電型の第２の領域によるシェル部の内周面との接合面(ＰＮ接合面)が発光面になるので、発光面積を大きく取ることができ、大きな発光強度を得ることができる。   According to the light emitting device of this embodiment, the rod-shaped light emitting element includes the outer peripheral surface of the core portion by the first and third regions of the first conductivity type and the inner periphery of the shell portion by the second region of the second conductivity type. Since the bonding surface (PN bonding surface) with the surface becomes the light emitting surface, a large light emitting area can be obtained and a large light emission intensity can be obtained.

また、一実施形態の発光装置では、上記棒状発光素子の最大寸法が１００μｍ以下である。   Moreover, in the light-emitting device of one Embodiment, the maximum dimension of the said rod-shaped light emitting element is 100 micrometers or less.

この実施形態の発光装置によれば、上記棒状発光素子の最大寸法が１００μｍ以下である。このような微細サイズの物体である棒状発光素子を向きも考慮して配置するには、この微細サイズの棒状発光素子を予め向きを揃えて準備しておくことが必要になる。もしくは、上記微細なサイズの棒状発光素子を掴んでから向きを揃える作業が必要になる。よって、この実施形態のように、棒状発光素子の最大寸法が１００μｍ以下の微細な場合は、棒状発光素子の向きを揃える必要のない本発明に好適となる。また、棒状発光素子のサイズが１００μｍ以下の小さいサイズであることで、熱が発光領域に篭らず、熱による出力低下や寿命低下を防ぐことができる。   According to the light emitting device of this embodiment, the maximum dimension of the bar light emitting element is 100 μm or less. In order to arrange the rod-like light emitting elements, which are such fine-sized objects, in consideration of the orientation, it is necessary to prepare the fine-sized rod-like light emitting elements with their orientations aligned in advance. Alternatively, an operation of aligning the orientation after grasping the fine-sized rod-like light emitting element is required. Therefore, as in this embodiment, when the maximum dimension of the rod-like light emitting element is as fine as 100 μm or less, it is suitable for the present invention that does not require the orientation of the rod-like light emitting element. Moreover, since the size of the rod-like light emitting element is a small size of 100 μm or less, heat does not reach the light emitting region, and output reduction and life reduction due to heat can be prevented.

また、一実施形態の発光装置の製造方法では、第１の電極と第２の電極および第３の電極を有する基板を用意する工程と、
上記基板に、第１導電型の第１の領域と第２導電型の第２の領域と第１導電型の第３の領域とを有すると共に上記第１,第２,第３の領域が上記第１,第２,第３の領域の順に並んでいて最大寸法が１００μｍ以下の複数の棒状発光素子を含んだ溶液を塗布する工程と、
上記第１の電極と第３の電極に電圧を印加して上記複数の棒状発光素子を上記第１,第２,第３の電極によって規定される位置に配列させる工程とを備える。 In one embodiment of the method for manufacturing a light emitting device, a step of preparing a substrate having a first electrode, a second electrode, and a third electrode;
The substrate has a first conductivity type first region, a second conductivity type second region, and a first conductivity type third region, and the first, second, and third regions are Applying a solution containing a plurality of rod-like light emitting elements arranged in the order of the first, second and third regions and having a maximum dimension of 100 μm or less;
Applying a voltage to the first electrode and the third electrode to arrange the plurality of rod-like light emitting elements at positions defined by the first, second and third electrodes.

この実施形態の発光装置の製造方法によれば、いわゆる誘電泳動を用いて、上記第１,第２,第３の電極によって規定される位置に最大寸法が１００μｍ以下の微細な上記棒状発光素子を配置できる。この製造方法では、上記棒状発光素子の向きを一方に決めることが困難なので、上記棒状発光素子の向きを一方に定める必要がない本発明の発光装置の製造方法として好適である。   According to the method of manufacturing the light emitting device of this embodiment, the fine rod-shaped light emitting element having a maximum dimension of 100 μm or less is formed at a position defined by the first, second, and third electrodes by using so-called dielectrophoresis. Can be placed. In this manufacturing method, since it is difficult to determine the direction of the rod-like light emitting element to one, it is suitable as a method for manufacturing the light emitting device of the present invention that does not require the orientation of the rod-like light emitting element to be one.

また、一実施形態のディスプレイ用バックライトでは、上記発光装置を有するので、製造が容易であり製造コストが抑えられる。   In addition, since the display backlight according to one embodiment includes the light emitting device, the display backlight is easy to manufacture and the manufacturing cost can be reduced.

また、一実施形態の照明装置は、上記発光装置を有するので、製造が容易であり製造コストが抑えられる。   Moreover, since the illuminating device of one Embodiment has the said light-emitting device, manufacture is easy and manufacturing cost is held down.

また、一実施形態のＬＥＤディスプレイは、上記発光装置を有するので、製造が容易であり製造コストが抑えられる。   Moreover, since the LED display of one Embodiment has the said light-emitting device, manufacture is easy and manufacturing cost is held down.

この発明の発光装置によれば、棒状発光素子の第２導電型の第２の領域の両側に第１導電型の第１の領域と第１導電型の第３の領域とが配置されている。よって、第１,第３の電極に対する棒状発光素子の第１,第３の領域の向きが入れ替わっても極性が入れ替わらないから、正常に発光可能になる。したがって、製造工程で第１,第３の電極に対する第１,第３の領域の接続が反対になってもよく、製造工程を簡略化でき製造コストを抑えることができる。   According to the light emitting device of the present invention, the first conductivity type first region and the first conductivity type third region are arranged on both sides of the second conductivity type second region of the rod-like light emitting element. . Therefore, even if the orientations of the first and third regions of the rod-like light emitting element with respect to the first and third electrodes are changed, the polarity does not change, so that normal light emission is possible. Therefore, the connection of the first and third regions to the first and third electrodes may be reversed in the manufacturing process, and the manufacturing process can be simplified and the manufacturing cost can be reduced.

この発明の発光装置の第１実施形態を示す平面図である。It is a top view which shows 1st Embodiment of the light-emitting device of this invention. この発明の発光装置の第２実施形態を示す平面図である。It is a top view which shows 2nd Embodiment of the light-emitting device of this invention. 上記第２実施形態が備える棒状発光素子の側面図である。It is a side view of the rod-shaped light emitting element with which the said 2nd Embodiment is provided. 上記棒状発光素子の断面図である。It is sectional drawing of the said rod-shaped light emitting element. この発明の発光装置の第３実施形態を示す平面図である。It is a top view which shows 3rd Embodiment of the light-emitting device of this invention. 棒状構造の発光ダイオードの製造方法の工程図である。It is process drawing of the manufacturing method of the light emitting diode of a rod-shaped structure. 図５Ａに続く棒状構造発光素子の製造方法の工程図である。It is process drawing of the manufacturing method of the rod-shaped structure light emitting element following FIG. 5A. 図５Ｂに続く棒状構造発光素子の製造方法の工程図である。It is process drawing of the manufacturing method of the rod-shaped structure light emitting element following FIG. 5B. 図５Ｃに続く棒状構造発光素子の製造方法の工程図である。It is process drawing of the manufacturing method of the rod-shaped structure light emitting element following FIG. 5C. 図５Ｄに続く棒状構造発光素子の製造方法の工程図である。It is process drawing of the manufacturing method of the rod-shaped structure light emitting element following FIG. 5D. この発明の第５実施形態としてのＬＥＤディスプレイの１画素の回路を示す図である。It is a figure which shows the circuit of 1 pixel of the LED display as 5th Embodiment of this invention. 従来の発光装置を示す斜視図である。It is a perspective view which shows the conventional light-emitting device.

以下、この発明を図示の実施の形態により詳細に説明する。   Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments.

(第１の実施の形態)
図１を参照して、この発明の発光装置の第１実施形態を説明する。図１は、この第１実施形態を示す模式的な平面図である。 (First embodiment)
With reference to FIG. 1, a first embodiment of the light-emitting device of the present invention will be described. FIG. 1 is a schematic plan view showing the first embodiment.

この第１実施形態の発光装置は、第１の電極１と第２の電極２と第３の電極３および棒状発光素子５を備え、上記第１〜第３の電極１〜３は基板４上に形成されている。上記第１〜第３の電極１〜３は、上記基板４上に順に配列されており、第１の電極１は、上記配列の方向と直交する方向に延びている基部１Ａとこの基部１Ａの略中央から上記第２の電極２に向かって突出している突出部１Ｂとを有する。また、上記第３の電極３は、上記配列の方向と直交する方向に延びている基部３Ａとこの基部３Ａの略中央から上記第２の電極２に向かって突出している突出部３Ｂとを有する。そして、上記第２の電極２は、上記第１の電極１と第３の電極３との間で上記配列の方向と直交する方向に延びている。   The light emitting device according to the first embodiment includes a first electrode 1, a second electrode 2, a third electrode 3, and a rod-like light emitting element 5, and the first to third electrodes 1 to 3 are on a substrate 4. Is formed. The first to third electrodes 1 to 3 are arranged in order on the substrate 4, and the first electrode 1 includes a base 1A extending in a direction orthogonal to the direction of the arrangement and the base 1A. And a projecting portion 1B projecting from substantially the center toward the second electrode 2. The third electrode 3 has a base portion 3A extending in a direction orthogonal to the direction of the arrangement, and a protruding portion 3B protruding toward the second electrode 2 from the approximate center of the base portion 3A. . The second electrode 2 extends between the first electrode 1 and the third electrode 3 in a direction perpendicular to the arrangement direction.

また、上記棒状発光素子５は、第１導電型の第１の領域としてのＰ型の第１領域６と、第２導電型の第２の領域としてのＮ型の第２領域７と、第３導電型の第３の領域としてのＰ型の第３領域８とを有する。上記Ｐ型の第１領域６とＮ型の第２領域７とＰ型の第３領域８とは第１の電極１から第３の電極３に向かって順に並んでいる。上記Ｐ型の第１領域６は上記第１の電極１の突出部１Ｂに接続され、上記Ｎ型の第２領域７は上記第２の電極２に接続され、上記Ｐ型の第３領域８は第３の電極３の突出部３Ｂに接続されている。   The rod-like light emitting element 5 includes a P-type first region 6 as a first conductivity type first region, an N-type second region 7 as a second conductivity type second region, And a P-type third region 8 as a third region of the three conductivity type. The P-type first region 6, the N-type second region 7, and the P-type third region 8 are arranged in order from the first electrode 1 to the third electrode 3. The P-type first region 6 is connected to the protruding portion 1B of the first electrode 1, the N-type second region 7 is connected to the second electrode 2, and the P-type third region 8 is connected. Is connected to the protruding portion 3B of the third electrode 3.

また、上記第１の電極１とグランドとの間に直流電源１０が接続され、上記第３の電極３とグランドとの間に直流電源１１が接続される。また、第２の電極２はグランドに接続される。上記直流電源１０の正極が第１の電極１に接続され、上記直流電源１０の負極がグランドに接続される。また、上記直流電源１１の正極が第３の電極３に接続され、上記直流電源１１の負極がグランドに接続される。   A DC power supply 10 is connected between the first electrode 1 and the ground, and a DC power supply 11 is connected between the third electrode 3 and the ground. The second electrode 2 is connected to the ground. The positive electrode of the DC power supply 10 is connected to the first electrode 1 and the negative electrode of the DC power supply 10 is connected to the ground. Further, the positive electrode of the DC power supply 11 is connected to the third electrode 3, and the negative electrode of the DC power supply 11 is connected to the ground.

したがって、上記Ｐ型の第１領域６からＮ型の第２領域７に向かって電流が流れて上記Ｐ型の第１領域６とＮ型の第２領域７とのＰＮ接合面Ｓ１で発光する。また、上記Ｐ型の第３領域８からＮ型の第２領域７に向かって電流が流れて上記Ｐ型の第３領域８とＮ型の第２領域７との接合面Ｓ２で発光する。   Therefore, a current flows from the P-type first region 6 toward the N-type second region 7, and light is emitted from the PN junction surface S 1 between the P-type first region 6 and the N-type second region 7. . Further, current flows from the P-type third region 8 toward the N-type second region 7, and light is emitted from the junction surface S <b> 2 between the P-type third region 8 and the N-type second region 7.

この実施形態の発光装置によれば、上記棒状発光素子５のＮ型の第２領域７の両側にＰ型の第１領域６とＰ型の第３領域８とが配置されている。よって、棒状発光素子５の向きが図１に示す向きとは逆になり、第１,第３の電極１,３に対する棒状発光素子５の第１,第３領域６,８の接続が逆になって、第１の電極１に対してＰ型の第３領域８が接続されて第３の電極３に対してＰ型の第１領域６が接続されても、ダイオード極性が入れ替わらないから、正常に発光することが可能になる。したがって、この実施形態の発光装置によれば、製造工程において、第１,第３の電極１,３に対する第１,第３の領域６,８の接続が反対になってもよく、棒状発光素子５の方向性を識別するためのマークや形状が不必要となり、製造工程を簡略化できて製造コストを抑えることができる。特に、棒状発光素子５の最大寸法が、１００μｍ以下の小さなサイズの場合には、微細サイズの部品となり棒状発光素子５の向きを予め揃える作業が困難であるので、棒状発光素子５の向きを揃えることが不必要な本実施形態により、製造工程を格段に簡略化できる。また、棒状発光素子５のサイズが１００μｍ以下の小さいサイズであることで、熱が発光領域に篭らず、熱による出力低下や寿命低下を防ぐことができる。   According to the light emitting device of this embodiment, the P-type first region 6 and the P-type third region 8 are arranged on both sides of the N-type second region 7 of the rod-like light-emitting element 5. Therefore, the direction of the rod-shaped light emitting element 5 is opposite to the direction shown in FIG. 1, and the connection of the first and third regions 6 and 8 of the rod-shaped light emitting element 5 to the first and third electrodes 1 and 3 is reversed. Thus, even if the P-type third region 8 is connected to the first electrode 1 and the P-type first region 6 is connected to the third electrode 3, the diode polarity does not change. It becomes possible to emit light normally. Therefore, according to the light emitting device of this embodiment, in the manufacturing process, the connection of the first and third regions 6 and 8 to the first and third electrodes 1 and 3 may be reversed, and the rod-like light emitting element The mark and the shape for identifying the directionality of 5 are unnecessary, the manufacturing process can be simplified, and the manufacturing cost can be suppressed. In particular, when the maximum dimension of the rod-like light emitting element 5 is a small size of 100 μm or less, it becomes a micro-sized component, and it is difficult to align the orientation of the rod-like light emitting element 5 in advance. In this embodiment, which is unnecessary, the manufacturing process can be greatly simplified. Moreover, since the size of the rod-like light emitting element 5 is a small size of 100 μm or less, heat does not reach the light emitting region, and it is possible to prevent a decrease in output or a life due to heat.

尚、上記実施形態では、棒状発光素子５の第１,第３領域６,８をＰ型とし、第２領域７をＮ型としたが、第１,第３領域６,８をＮ型とし、第２領域７をＰ型としてもよい。この場合、直流電源１０の正極をグランドに接続し、直流電源１０の負極を第１の電極１に接続すると共に、直流電源１１の正極をグランドに接続し、直流電源１１の負極を第３の電極３に接続する。   In the above embodiment, the first and third regions 6 and 8 of the rod-like light emitting element 5 are P-type and the second region 7 is N-type, but the first and third regions 6 and 8 are N-type. The second region 7 may be P-type. In this case, the positive electrode of the DC power supply 10 is connected to the ground, the negative electrode of the DC power supply 10 is connected to the first electrode 1, the positive electrode of the DC power supply 11 is connected to the ground, and the negative electrode of the DC power supply 11 is connected to the third electrode. Connect to electrode 3.

また、直流電源１０、１１は、必ずしも２つ備えられている必要はなく、どちらか１つでもよい。この場合は、２つの接合面Ｓ１、Ｓ２のうち１つの接合面のみで発光することになるが、棒状発光素子５の向きが逆になっても、ダイオード極性が入れ替わらないから、やはり正常に発光することが可能になる。例えば、直流電源１０のみを備える場合は、上記Ｐ型の第１領域６からＮ型の第２領域７に向かって電流が流れて上記Ｐ型の第１領域６とＮ型の第２領域７とのＰＮ接合面Ｓ１で発光する。   Moreover, the DC power supplies 10 and 11 do not necessarily need to be provided, and any one of them may be provided. In this case, light is emitted from only one of the two joint surfaces S1 and S2. However, even if the direction of the rod-like light emitting element 5 is reversed, the diode polarity does not change. It becomes possible to emit light. For example, when only the DC power supply 10 is provided, a current flows from the P-type first region 6 toward the N-type second region 7, so that the P-type first region 6 and the N-type second region 7. The PN junction surface S1 emits light.

(第２の実施の形態)
次に、図２および図３Ａ,図３Ｂを参照して、この発明の発光装置の第２実施形態を説明する。図２は、この第２実施形態を示す模式的な平面図であり、図３Ａは、この第２実施形態が備える棒状発光素子２１の側面図であり、図３Ｂは、上記棒状発光素子２１の断面図である。この第２実施形態は、前述の第１実施形態の棒状発光素子５に替えて、図３Ａ,図３Ｂに示す棒状発光素子２１を備えた点だけが、前述の第１実施形態と異なる。よって、この第２実施形態では、前述の第１実施形態と同様の部分には同様の符号を付して、前述の第１実施形態と異なる点を主に説明する。 (Second embodiment)
Next, a second embodiment of the light-emitting device of the present invention will be described with reference to FIG. 2, FIG. 3A, and FIG. 3B. FIG. 2 is a schematic plan view showing the second embodiment, FIG. 3A is a side view of the rod-like light emitting element 21 provided in the second embodiment, and FIG. It is sectional drawing. The second embodiment is different from the first embodiment only in that a rod-like light emitting element 21 shown in FIGS. 3A and 3B is provided in place of the rod-like light emitting element 5 of the first embodiment. Therefore, in the second embodiment, the same parts as those in the first embodiment described above are denoted by the same reference numerals, and different points from the first embodiment will be mainly described.

上記棒状発光素子２１は、Ｐ型の円柱状のコア部２２とＮ型の円筒状のシェル部２３とを有する。上記円筒状のシェル部２３は、上記円柱状のコア部２２の外周面２２Ａを被覆している。上記円柱状のコア部２２の両端部２２Ｂ,２２Ｃは上記円筒状のシェル部２３の両端から突出し露出している。上記Ｎ型の円筒状のシェル部２３が第２の領域をなし、上記Ｐ型の円柱状のコア部２２は第１および第３の領域をなす。この棒状発光素子２１のＰ型の円柱状のコア部２２の端部２２Ｂが基板４上の第１の電極１の突出部１Ｂに接続され、上記コア部２２の端部２２Ｃが第３の電極３の突出部３Ｂに接続されている。また、上記円筒状のシェル部２３は第２の電極２に接続されている。   The rod-like light emitting element 21 has a P-type columnar core portion 22 and an N-type cylindrical shell portion 23. The cylindrical shell portion 23 covers the outer peripheral surface 22 </ b> A of the columnar core portion 22. Both end portions 22B and 22C of the cylindrical core portion 22 protrude from both ends of the cylindrical shell portion 23 and are exposed. The N-type cylindrical shell portion 23 forms a second region, and the P-type columnar core portion 22 forms first and third regions. The end 22B of the P-shaped cylindrical core portion 22 of the rod-like light emitting element 21 is connected to the protruding portion 1B of the first electrode 1 on the substrate 4, and the end 22C of the core portion 22 is the third electrode. 3 protrusions 3B. The cylindrical shell portion 23 is connected to the second electrode 2.

この第２実施形態の発光装置は、第１の電極１とグランドとの間に接続された直流電源１０によって、Ｐ型のコア部２２の端部２２ＢからＮ型のシェル部２３に向かって電流が流れてＰ型のコア部２２とＮ型のシェル部２３とのＰＮ接合面Ｓ２１で発光する。また、第３の電極３とグランドとの間に接続された直流電源１１によって、Ｐ型のコア部２２の端部２２ＣからＮ型のシェル部２３に向かって電流が流れてＰ型のコア部２２とＮ型のシェル部２３とのＰＮ接合面Ｓ２１で発光する。この第２実施形態の棒状発光素子２１によれば、前述の第１実施形態の棒状発光素子５のＰＮ接合面Ｓ１に比べて上記円柱状のコア部２２と円筒状のシェル部２３とのＰＮ接合面Ｓ２１を大きくできるので、大きな発光強度を得ることができる。   In the light emitting device according to the second embodiment, a direct current power source 10 connected between the first electrode 1 and the ground causes a current to flow from the end 22B of the P-type core portion 22 toward the N-type shell portion 23. Flows and emits light at the PN junction surface S21 between the P-type core portion 22 and the N-type shell portion 23. Further, the DC power source 11 connected between the third electrode 3 and the ground causes a current to flow from the end portion 22C of the P-type core portion 22 toward the N-type shell portion 23, and the P-type core portion. Light is emitted from the PN junction surface S21 between the N-type shell portion 23 and the N-type shell portion 23. According to the rod-like light emitting element 21 of the second embodiment, the PN between the columnar core portion 22 and the cylindrical shell portion 23 as compared with the PN junction surface S1 of the rod-like light emitting element 5 of the first embodiment described above. Since the joining surface S21 can be increased, a large emission intensity can be obtained.

また、この第２実施形態においても、Ｎ型の円筒状のシェル部２３の両側にＰ型のコア部２２の端部２２Ｂと端部２２Ｃが配置されている。よって、棒状発光素子２１の向きが図２に示す向きとは逆になり、第１,第３の電極１,３に対する棒状発光素子２１のコア部２２の端部２２Ｂ,２２Ｃの接続が逆になっても、ダイオード極性が入れ替わらないので、正常に発光することが可能になる。したがって、この実施形態の発光装置によれば、製造工程において、第１,第３の電極１,３に対するコア部の端部２２Ｂ,２２Ｃの接続が反対になってもよく、棒状発光素子２１の方向性を識別するためのマークや形状が不必要となり、製造工程を簡略化できて製造コストを抑えることができる。特に、棒状発光素子２１の最大寸法が、１００μｍ以下の小さなサイズの場合には、微細サイズの部品となり棒状発光素子２１の向きを予め揃える作業が困難になるので、本実施形態により、製造工程を格段に簡略化できる。また、棒状発光素子２１のサイズが１００μｍ以下の小さいサイズであることで、熱が発光領域に篭らず、熱による出力低下や寿命低下を防ぐことができる。   Also in the second embodiment, the end portions 22B and 22C of the P-type core portion 22 are arranged on both sides of the N-type cylindrical shell portion 23. Therefore, the direction of the rod-shaped light emitting element 21 is opposite to the direction shown in FIG. 2, and the connection of the end portions 22B and 22C of the core portion 22 of the rod-shaped light emitting element 21 to the first and third electrodes 1 and 3 is reversed. Even if it becomes, since the diode polarity is not changed, it becomes possible to emit light normally. Therefore, according to the light emitting device of this embodiment, in the manufacturing process, the connection of the end portions 22B and 22C of the core portion to the first and third electrodes 1 and 3 may be reversed. A mark or a shape for identifying the directionality is unnecessary, and the manufacturing process can be simplified and the manufacturing cost can be suppressed. In particular, when the maximum dimension of the rod-like light emitting element 21 is a small size of 100 μm or less, it becomes a fine-sized component, and it becomes difficult to align the orientation of the rod-like light emitting element 21 in advance. It can be greatly simplified. Moreover, since the size of the rod-like light emitting element 21 is a small size of 100 μm or less, heat does not reach the light emitting region, and output reduction and life reduction due to heat can be prevented.

尚、上記実施形態では、棒状発光素子２１の円柱状のコア部２２をＰ型とし、円筒状のシェル部２３をＮ型としたが、コア部２２をＮ型とし、シェル部２３をＰ型としてもよい。この場合、直流電源１０の正極をグランドに接続し、直流電源１０の負極を第１の電極１に接続すると共に、直流電源１１の正極をグランドに接続し、直流電源１１の負極を第３の電極３に接続する。また、上記実施形態では、コア部２２を円柱状としシェル部２３を円筒状としたが、コア部２２を多角柱状としシェル部２３を多角筒状としてもよい。例えば、コア部２２を三角柱状,四角柱状,五角柱状あるいは六角柱状とし、シェル部２３を三角筒状,四角筒状,五角筒状あるいは六角筒状としてもよい。さらに、コア部２２を楕円柱状としシェル部２３を楕円筒状としてもよい。   In the above embodiment, the cylindrical core portion 22 of the rod-like light emitting element 21 is P-type and the cylindrical shell portion 23 is N-type. However, the core portion 22 is N-type and the shell portion 23 is P-type. It is good. In this case, the positive electrode of the DC power supply 10 is connected to the ground, the negative electrode of the DC power supply 10 is connected to the first electrode 1, the positive electrode of the DC power supply 11 is connected to the ground, and the negative electrode of the DC power supply 11 is connected to the third electrode. Connect to electrode 3. Moreover, in the said embodiment, although the core part 22 was made into column shape and the shell part 23 was made into cylindrical shape, the core part 22 may be made into polygonal column shape and the shell part 23 may be made into polygonal cylinder shape. For example, the core portion 22 may be triangular, quadrangular, pentagonal or hexagonal, and the shell 23 may be triangular, quadrangular, pentagonal or hexagonal. Furthermore, the core part 22 may be an elliptical columnar shape, and the shell part 23 may be an elliptical cylindrical shape.

また、直流電源１０、１１は、必ずしも２つ備えられている必要はなく、どちらか１つでもよい。この場合でも、棒状発光素子２１の向きが逆になっても、ダイオード極性が入れ替わらないから、やはり正常に発光することが可能になる。例えば、直流電源１０のみを備える場合は、上記Ｐ型コア部２２の端部２２ＢからＮ型のシェル部２３に向かって電流が流れてＰ型のコア部２２とＮ型のシェル部２３とのＰＮ接合面Ｓ２１で発光する。   Moreover, the DC power supplies 10 and 11 do not necessarily need to be provided, and any one of them may be provided. Even in this case, even if the direction of the rod-like light emitting element 21 is reversed, the diode polarity does not change, so that it is possible to emit light normally. For example, when only the DC power supply 10 is provided, a current flows from the end 22B of the P-type core part 22 toward the N-type shell part 23, and the P-type core part 22 and the N-type shell part 23 are connected. Light is emitted from the PN junction surface S21.

次に、図５Ａ〜図５Ｅを参照して、上記第２実施形態で説明した様な棒状構造の発光素子の製造方法の一例を説明する。まず、図５Ａに示すように、ｎ型ＧａＮからなる基板７１上に、成長穴７２ａを有するマスク７２を形成する。次に、図５Ｂに示すように、半導体コア形成工程において、マスク７２の成長穴７２ａにより露出した基板７１上に、ＭＯＣＶＤ(Metal Organic Chemical Vapor Deposition：有機金属気相成長)装置を用いて、ｎ型ＧaＮを結晶成長させて棒状の半導体コア７３を形成する。ここで、ｎ型ＧaＮは、六方晶系の結晶成長となり、基板７１表面に対して垂直方向をｃ軸方向にして成長させることにより、六角柱形状の半導体コアが得られる。   Next, with reference to FIGS. 5A to 5E, an example of a method for manufacturing a light emitting element having a rod-like structure as described in the second embodiment will be described. First, as shown in FIG. 5A, a mask 72 having a growth hole 72a is formed on a substrate 71 made of n-type GaN. Next, as shown in FIG. 5B, in the semiconductor core formation process, an MOCVD (Metal Organic Chemical Vapor Deposition) apparatus is used to form n on the substrate 71 exposed by the growth hole 72a of the mask 72. A rod-shaped semiconductor core 73 is formed by crystal growth of the type GaN. Here, the n-type GaN has hexagonal crystal growth, and a hexagonal columnar semiconductor core is obtained by growing the n-type GaN in a c-axis direction perpendicular to the surface of the substrate 71.

次に、図５Ｃに示すように、半導体層形成工程において、棒状の半導体コア７３を覆うように基板７１全面にｐ型ＧaＮからなる半導体層７４を形成する。次に、図５Ｄに示すように、露出工程において、リフトオフにより半導体コア７３を覆う半導体層７４ａの部分を除く領域とマスク７２を除去して、棒状の半導体コア７３の基板７１側に基板側の外周面を露出させて露出部分７３aを形成する。この状態で、上記半導体コア７３の基板７１と反対の側の端面は、半導体層７４ａにより覆われている。この実施形態の露出工程では、リフトオフを用いたがエッチングにより半導体コアの一部を露出させてもよい。次に、エッチングにより半導体コア７３の基板７１と反対側の外周面を露出させてもう一方の露出部分７３ｂを形成する。   Next, as shown in FIG. 5C, in the semiconductor layer forming step, a semiconductor layer 74 made of p-type GaN is formed on the entire surface of the substrate 71 so as to cover the rod-shaped semiconductor core 73. Next, as shown in FIG. 5D, in the exposure step, the region excluding the portion of the semiconductor layer 74a covering the semiconductor core 73 and the mask 72 are removed by lift-off, and the substrate side of the rod-shaped semiconductor core 73 is moved to the substrate 71 side. The outer peripheral surface is exposed to form an exposed portion 73a. In this state, the end surface of the semiconductor core 73 opposite to the substrate 71 is covered with the semiconductor layer 74a. In the exposure process of this embodiment, lift-off is used, but a part of the semiconductor core may be exposed by etching. Next, the outer peripheral surface opposite to the substrate 71 of the semiconductor core 73 is exposed by etching to form another exposed portion 73b.

次に、切り離し工程において、超音波(例えば数１０ＫＨz)を用いて基板７１を基板平面に沿って振動させることにより、基板７１上に立設する半導体コア７３の基板７１側に近い根元を折り曲げるように、半導体層７４ａに覆われた半導体コア７３に対して応力が働いて、図５Ｅに示すように、半導体層７４ａに覆われた半導体コア７３が基板７１から切り離される。こうして、基板７１から切り離なされた微細な棒状構造発光素子７０を製造することができる。この棒状構造の発光素子の製造方法では、棒状構造発光素子７０の直径を１μｍ、長さを１０μｍとしている。   Next, in the separation step, the base 71 close to the substrate 71 side of the semiconductor core 73 standing on the substrate 71 is bent by vibrating the substrate 71 along the substrate plane using ultrasonic waves (for example, several tens of kHz). Furthermore, stress acts on the semiconductor core 73 covered with the semiconductor layer 74a, and the semiconductor core 73 covered with the semiconductor layer 74a is separated from the substrate 71 as shown in FIG. 5E. In this way, the fine rod-shaped structure light emitting element 70 separated from the substrate 71 can be manufactured. In this method for manufacturing a light emitting element with a rod-like structure, the diameter of the rod-like structured light emitting element 70 is 1 μm and the length is 10 μm.

上記発光素子の製造方法では、基板７１と半導体コア７３と半導体層７４aに、ＧaＮを母材とする半導体を用いたが、ＧaＡs,ＡlＧaＡs,ＧaＡsＰ,ＩnＧaＮ,ＡlＧaＮ,ＧaＰ,ＺnＳe,ＡlＧaＩnＰなどを母材とする半導体を用いてもよい。また、基板と半導体コアをｎ型とし、半導体層をｐ型としたが、導電型が逆の棒状構造発光ダイオードとしてもよい。また、断面が六角柱の半導体コアを有する棒状構造発光ダイオードの製造方法について説明したが、これに限らず、断面が円形または楕円の棒状であってもよいし、断面が三角形などの他の多角形状の棒状の半導体コアを有する棒状構造発光素子も上述と同様の製造方法で作製できる。また、上記発光素子の製造方法では、棒状構造発光素子の直径を１μｍとし長さを１０μｍのマイクロオーダーサイズとしたが、直径または長さのうちの少なくとも直径が１μｍ未満のナノオーダーサイズの素子としてよい。上記棒状構造発光素子の半導体コアの直径は５００ｎｍ以上かつ１００μｍ以下が好ましく、数１０ｎｍ〜数１００ｎｍの棒状構造発光素子に比べて半導体コアの直径のばらつきを抑えることができ、発光面積すなわち発光特性のばらつきを低減でき、歩留まりを向上できる。   In the method for manufacturing a light emitting element, a semiconductor using GaN as a base material is used for the substrate 71, the semiconductor core 73, and the semiconductor layer 74a. A semiconductor material may be used. Further, although the substrate and the semiconductor core are n-type and the semiconductor layer is p-type, a rod-shaped structure light emitting diode having a reverse conductivity type may be used. In addition, the method for manufacturing a rod-shaped structure light emitting diode having a semiconductor core with a hexagonal column in the cross section has been described. However, the present invention is not limited to this, and the cross section may be a circular or elliptical rod shape, or the cross section may be another polygon such as a triangle. A rod-shaped structure light-emitting element having a rod-shaped semiconductor core can also be manufactured by the same manufacturing method as described above. Further, in the above light emitting device manufacturing method, the rod-shaped structure light emitting device has a micro-order size of 1 μm in diameter and 10 μm in length, but as a nano-order size device having a diameter or length of less than 1 μm. Good. The diameter of the semiconductor core of the rod-shaped structure light emitting element is preferably 500 nm or more and 100 μm or less, and variation in the diameter of the semiconductor core can be suppressed as compared with the rod-shaped structure light emitting element of several tens nm to several hundred nm, and the light emission area, that is, the light emission characteristics. Variation can be reduced and yield can be improved.

また、上記発光素子の製造方法では、ＭＯＣＶＤ装置を用いて半導体コア７３を結晶成長させたが、ＭＢＥ(分子線エピタキシャル)装置などの他の結晶成長装置を用いて半導体コアを形成してもよい。また、成長穴を有するマスクを用いて半導体コアを基板上に結晶成長させたが、基板上に金属種を配置して、金属種から半導体コアを結晶成長させてもよい。また、上記発光素子の製造方法では、半導体層７４ａに覆われた半導体コア７３を、超音波を用いて基板７１から切り離したが、これに限らず、切断工具を用いて半導体コアを基板から機械的に切り離してもよい。この場合、簡単な方法で基板上に設けられた微細な複数の棒状構造発光素子を短時間で切り離すことができる。   In the method for manufacturing a light emitting element, the semiconductor core 73 is crystal-grown using an MOCVD apparatus. However, the semiconductor core may be formed using another crystal growth apparatus such as an MBE (molecular beam epitaxial) apparatus. . Further, although the semiconductor core is crystal-grown on the substrate using a mask having a growth hole, the semiconductor core may be crystal-grown from the metal seed by arranging a metal species on the substrate. In the method for manufacturing a light emitting element, the semiconductor core 73 covered with the semiconductor layer 74a is separated from the substrate 71 using ultrasonic waves. However, the present invention is not limited thereto, and the semiconductor core is mechanically removed from the substrate using a cutting tool. May be separated. In this case, a plurality of fine rod-shaped light emitting elements provided on the substrate can be separated in a short time by a simple method.

(第３の実施の形態)
次に、図４を参照して、この発明の発光装置の第３実施形態を説明する。図４は、この第３実施形態を示す模式的な平面図である。 (Third embodiment)
Next, a third embodiment of the light-emitting device of the present invention will be described with reference to FIG. FIG. 4 is a schematic plan view showing the third embodiment.

この第３実施形態は、第１の電極３１と第２の電極３２と第３の電極３３および、前述の第１実施形態の棒状発光素子５と同様の構成の２本の棒状発光素子３５,３６を備え、上記第１〜第３の電極３１〜３３は前述の第１実施形態の基板４と同様の基板３４上に形成されている。上記第１〜第３の電極３１〜３３は、上記基板３４上に順に配列されており、第１の電極３１は、上記配列の方向と直交する方向に延びている基部３１Ａとこの基部３１Ａから上記第２の電極３２に向かって突出している２つの突出部３１Ｂ,３１Ｃを有する。また、上記第３の電極３３は、上記配列の方向と直交する方向に延びている基部３３Ａとこの基部３３Ａから上記第２の電極３２に向かって突出している２つの突出部３３Ｂ,３３Ｃとを有する。そして、上記第２の電極３２は、上記第１の電極３１と第３の電極３３との間で上記配列の方向と直交する方向に延びている。   In the third embodiment, the first electrode 31, the second electrode 32, the third electrode 33, and the two rod-like light emitting elements 35 having the same configuration as the rod-like light emitting element 5 of the first embodiment described above, 36, and the first to third electrodes 31 to 33 are formed on a substrate 34 similar to the substrate 4 of the first embodiment. The first to third electrodes 31 to 33 are arranged in order on the substrate 34, and the first electrode 31 includes a base 31A extending in a direction orthogonal to the direction of the arrangement and the base 31A. Two projecting portions 31B and 31C projecting toward the second electrode 32 are provided. The third electrode 33 includes a base portion 33A extending in a direction perpendicular to the arrangement direction and two protrusion portions 33B and 33C protruding from the base portion 33A toward the second electrode 32. Have. The second electrode 32 extends between the first electrode 31 and the third electrode 33 in a direction orthogonal to the arrangement direction.

上記棒状発光素子３５は、Ｐ型の第１領域３５ＡとＮ型の第２領域３５ＢとＰ型の第３領域３５Ｃとを有する。上記Ｐ型の第１領域３５Ａは第１の電極３１の突出部３１Ｂに接続され、上記Ｎ型の第２領域３５Ｂは第２の電極３２に接続され、上記Ｐ型の第３領域３５Ｃは第３の電極３３の突出部３３Ｂに接続されている。また、上記棒状発光素子３６は、Ｐ型の第１領域３６ＡとＮ型の第２領域３６ＢとＰ型の第３領域３６Ｃとを有する。上記Ｐ型の第１領域３６Ａは第１の電極３１の突出部３１Ｃに接続され、Ｎ型の第２領域３６Ｂは第２の電極３２に接続され、Ｐ型の第３領域３６Ｃは第３の電極３３に接続されている。   The rod-like light emitting element 35 has a P-type first region 35A, an N-type second region 35B, and a P-type third region 35C. The P-type first region 35A is connected to the protrusion 31B of the first electrode 31, the N-type second region 35B is connected to the second electrode 32, and the P-type third region 35C is 3 is connected to the protrusion 33B of the third electrode 33. The rod-like light emitting element 36 has a P-type first region 36A, an N-type second region 36B, and a P-type third region 36C. The P-type first region 36A is connected to the protruding portion 31C of the first electrode 31, the N-type second region 36B is connected to the second electrode 32, and the P-type third region 36C is the third region. It is connected to the electrode 33.

また、上記第１の電極３１とグランドとの間に直流電源４０が接続され、上記第３の電極３３とグランドとの間に直流電源４１が接続される。また、第２の電極３２はグランドに接続される。上記直流電源４０の正極が第１の電極３１に接続され、上記直流電源４０の負極がグランドに接続される。また、上記直流電源４１の正極が第３の電極３３に接続され、上記直流電源４１の負極がグランドに接続される。   A DC power supply 40 is connected between the first electrode 31 and the ground, and a DC power supply 41 is connected between the third electrode 33 and the ground. The second electrode 32 is connected to the ground. The positive electrode of the DC power supply 40 is connected to the first electrode 31, and the negative electrode of the DC power supply 40 is connected to the ground. Further, the positive electrode of the DC power supply 41 is connected to the third electrode 33, and the negative electrode of the DC power supply 41 is connected to the ground.

したがって、上記棒状発光素子３５のＰ型の第１領域３５ＡからＮ型の第２領域３５Ｂに向かって電流が流れて上記Ｐ型の第１領域３５ＡとＮ型の第２領域３５ＢとのＰＮ接合面Ｓ３１で発光する。また、上記Ｐ型の第３領域３５ＣからＮ型の第２領域３５Ｂに向かって電流が流れて上記Ｐ型の第３領域３５ＣとＮ型の第２領域３５Ｂとの接合面Ｓ３２で発光する。また、上記棒状発光素子３６のＰ型の第１領域３６ＡからＮ型の第２領域３６Ｂに向かって電流が流れて上記Ｐ型の第１領域３６ＡとＮ型の第２領域３６ＢとのＰＮ接合面Ｓ３３で発光する。また、上記Ｐ型の第３領域３６ＣからＮ型の第２領域３６Ｂに向かって電流が流れて上記Ｐ型の第３領域３６ＣとＮ型の第２領域３６Ｂとの接合面Ｓ３４で発光する。   Therefore, a current flows from the P-type first region 35A of the rod-shaped light emitting element 35 toward the N-type second region 35B, and the PN junction between the P-type first region 35A and the N-type second region 35B is performed. Light is emitted from the surface S31. In addition, current flows from the P-type third region 35C toward the N-type second region 35B, and light is emitted from the joint surface S32 between the P-type third region 35C and the N-type second region 35B. In addition, a current flows from the P-type first region 36A of the rod-shaped light emitting element 36 toward the N-type second region 36B, and the PN junction between the P-type first region 36A and the N-type second region 36B. Light is emitted from the surface S33. Further, current flows from the P-type third region 36C toward the N-type second region 36B, and light is emitted from the joint surface S34 between the P-type third region 36C and the N-type second region 36B.

この第３実施形態の発光装置によれば、上記棒状発光素子３５のＮ型の第２領域３５Ｂの両側にＰ型の第１領域３５ＡとＰ型の第３領域３５Ｃとが配置され、上記棒状発光素子３６のＮ型の第２領域３６Ｂの両側にＰ型の第１領域３６ＡとＰ型の第３領域３６Ｃとが配置されている。したがって、上記棒状発光素子３５の向きが図４に示す向きとは逆になって、第１,第３の電極３１,３３に対する棒状発光素子３５の第１,第３領域３５Ａ,３５Ｃの接続が逆になっても、ダイオード極性が入れ替わらないから、正常に発光することが可能になる。これは、もう１つの棒状発光素子３６についても同様である。   According to the light emitting device of the third embodiment, the P-type first region 35A and the P-type third region 35C are arranged on both sides of the N-type second region 35B of the rod-shaped light emitting element 35, and the rod-shaped A P-type first region 36A and a P-type third region 36C are arranged on both sides of the N-type second region 36B of the light emitting element 36. Therefore, the orientation of the rod-like light emitting element 35 is opposite to the orientation shown in FIG. 4, and the connection of the first and third regions 35A, 35C of the rod-like light emitting element 35 to the first and third electrodes 31, 33 is performed. Even if it is reversed, the diode polarity does not change, so that it is possible to emit light normally. The same applies to the other rod-like light emitting element 36.

したがって、この実施形態の発光装置によれば、製造工程において、第１,第３の電極３１,３３に対する第１,第３の領域３５Ａ,３５Ｃの接続が反対になってもよく、第１,第３の電極３１,３３に対する第１,第３の領域３６Ａ,３６Ｃの接続が反対になってもよい。よって、棒状発光素子３５,３６の向きを揃えることが不必要なので、製造工程を簡略化でき、棒状発光素子３５,３６の方向性を識別するためのマークや形状も不必要となり、製造コストを抑えることができる。特に、棒状発光素子３５,３６の最大寸法が、１００μｍ以下の小さなサイズの場合には、微細サイズの部品となり棒状発光素子３５,３６の向きを予め揃える作業が困難になるので、棒状発光素子３５,３６の向きを揃えることが不必要な本実施形態により、製造工程を格段に簡略化できる。また、棒状発光素子３５,３６のサイズが１００μｍ以下の小さいサイズであることで、熱が発光領域に篭らず、熱による出力低下や寿命低下を防ぐことができる。   Therefore, according to the light emitting device of this embodiment, in the manufacturing process, the connection of the first and third regions 35A and 35C to the first and third electrodes 31 and 33 may be reversed. The connection of the first and third regions 36A and 36C to the third electrodes 31 and 33 may be reversed. Therefore, since it is not necessary to align the directions of the rod-like light emitting elements 35 and 36, the manufacturing process can be simplified, and the mark and shape for identifying the directionality of the rod-like light emitting elements 35 and 36 are unnecessary, thereby reducing the production cost. Can be suppressed. In particular, when the maximum size of the rod-like light emitting elements 35 and 36 is a small size of 100 μm or less, it becomes a micro-sized component, and it becomes difficult to align the directions of the rod-like light emitting elements 35 and 36 in advance. , 36 is unnecessary, and the manufacturing process can be greatly simplified. Moreover, since the size of the rod-like light emitting elements 35 and 36 is a small size of 100 μm or less, heat does not reach the light emitting region, and output reduction and life reduction due to heat can be prevented.

尚、上記実施形態では、棒状発光素子３５,３６の第１,第３領域３５Ａ,３５Ｃ,３６Ａ,３６ＣをＰ型とし、第２領域３５Ｂ,３６ＢをＮ型としたが、第１,第３領域３５Ａ,３５Ｃ,３６Ａ,３６ＣをＮ型とし、第２領域３５Ｂ,３６ＢをＰ型としてもよい。この場合、直流電源４０の正極をグランドに接続し、直流電源４０の負極を第１の電極３１に接続すると共に、直流電源４１の正極をグランドに接続し、直流電源４１の負極を第３の電極３３に接続する。   In the above embodiment, the first and third regions 35A, 35C, 36A, and 36C of the rod-like light emitting elements 35 and 36 are P-type, and the second regions 35B and 36B are N-type. The regions 35A, 35C, 36A, and 36C may be N-type, and the second regions 35B and 36B may be P-type. In this case, the positive electrode of the DC power supply 40 is connected to the ground, the negative electrode of the DC power supply 40 is connected to the first electrode 31, the positive electrode of the DC power supply 41 is connected to the ground, and the negative electrode of the DC power supply 41 is connected to the third electrode. Connect to electrode 33.

また、直流電源４０、４１は、必ずしも２つ備えられている必要はなく、どちらか１つでもよい。この場合は、４つの接合面Ｓ３１〜Ｓ３４のうち２つ接合面のみで発光することになるが、棒状発光素子３５、３６の一方、又は両方の向きが逆になっても、ダイオード極性が入れ替わらないから、やはり正常に発光することが可能になる。例えば、直流電源１０のみを備える場合は、上記Ｐ型の第１領域３５ＡからＮ型の第２領域３５Ｂに向かって、上記Ｐ型の第１領域３６ＡからＮ型の第２領域３６Ｂに向かって、それぞれ電流が流れて、ＰＮ接合面Ｓ３１及びＳ３３で発光する。   Further, the DC power supplies 40 and 41 are not necessarily provided, and either one may be provided. In this case, light is emitted from only two of the four bonding surfaces S31 to S34. However, even if one or both of the rod-like light emitting elements 35 and 36 are reversed, the diode polarity is inserted. Since it does not change, it is possible to emit light normally. For example, when only the DC power supply 10 is provided, the P-type first region 35A is directed toward the N-type second region 35B, and the P-type first region 36A is directed toward the N-type second region 36B. Each current flows and light is emitted from the PN junction surfaces S31 and S33.

また、上記実施形態では、第１,第３の電極３１,３３がそれぞれ２つの突出部３１Ｂ,３１Ｃ,３３Ｂ,３３Ｃを有したが、第１,第３の電極３１,３３がそれぞれ３つ以上の突出部を有し、第１の電極の３つ以上の突出部と第３の突出部の３つ以上の突出部との間に上記棒状発光素子３５,３６と同様の構成の３つ以上の棒状発光素子を接続してもよい。一例として、上記第１の電極の１００個以上の突出部と第３の突出部の１００個以上の突出部との間に上記棒状発光素子３５,３６と同様の構成の１００個以上の棒状発光素子を接続してもよい。   In the above embodiment, each of the first and third electrodes 31 and 33 has the two protruding portions 31B, 31C, 33B, and 33C. However, the first and third electrodes 31 and 33 each have three or more. 3 or more having the same structure as the rod-shaped light emitting elements 35 and 36 between the three or more projecting portions of the first electrode and the three or more projecting portions of the third projecting portion. These rod-shaped light emitting elements may be connected. As an example, 100 or more rod-shaped light emitting elements having the same configuration as the rod-shaped light emitting elements 35 and 36 between 100 or more projecting portions of the first electrode and 100 or more projecting portions of the third projecting portion. Elements may be connected.

(第４の実施の形態)
次に、この発明の第４実施形態としての発光装置の製造方法を説明する。この第４実施形態では、図４を参照して前述の第３実施形態で説明されたような発光装置を製造する方法を説明する。 (Fourth embodiment)
Next explained is a manufacturing method of the light emitting device as the fourth embodiment of the invention. In the fourth embodiment, a method of manufacturing a light emitting device as described in the third embodiment will be described with reference to FIG.

この第４実施形態では、まず、表面３４Ａに第１の電極３１と第２の電極３２と第３の電極３３が形成された基板３４を用意する。この基板３４は絶縁基板とし、第１,第２,第３の電極３１,３２,３３は金属電極とする。一例として、印刷技術を利用して絶縁基板３４の表面３４Ａに所望の電極形状の金属電極３１,３２,３３を形成することができる。また、絶縁基板３４の表面３４Ａに金属膜及び感光体膜を一様に積層し、この感光体膜を所望の電極パターンに露光・現像し、パターニングされた感光体膜をマスクとして金属膜をエッチングして第１〜第３の電極３１〜３３を形成することができる。なお、上記金属電極３１〜３３を作製する金属の材料としては、金、銀、銅、鉄、タングステン、タングステンナイトライド、アルミニウム、タンタルやそれらの合金などを用いることができる。また、絶縁基板３４はガラス、セラミック、アルミナ、樹脂のような絶縁体、またはシリコンのような半導体表面にシリコン酸化膜を形成し、表面が絶縁性を有するような基板である。ガラス基板を用いる場合は、表面にシリコン酸化膜、シリコン窒化膜のような下地絶縁膜を形成するのが望ましい。   In the fourth embodiment, first, a substrate 34 having a first electrode 31, a second electrode 32, and a third electrode 33 formed on the surface 34A is prepared. The substrate 34 is an insulating substrate, and the first, second, and third electrodes 31, 32, and 33 are metal electrodes. As an example, the metal electrodes 31, 32, and 33 having desired electrode shapes can be formed on the surface 34A of the insulating substrate 34 by using a printing technique. In addition, a metal film and a photoreceptor film are uniformly laminated on the surface 34A of the insulating substrate 34, this photoreceptor film is exposed and developed into a desired electrode pattern, and the metal film is etched using the patterned photoreceptor film as a mask. Thus, the first to third electrodes 31 to 33 can be formed. In addition, as a metal material for producing the metal electrodes 31 to 33, gold, silver, copper, iron, tungsten, tungsten nitride, aluminum, tantalum, or an alloy thereof can be used. The insulating substrate 34 is an insulating material such as glass, ceramic, alumina, or resin, or a substrate in which a silicon oxide film is formed on a semiconductor surface such as silicon and the surface is insulative. When a glass substrate is used, it is desirable to form a base insulating film such as a silicon oxide film or a silicon nitride film on the surface.

また、上記第１の電極３１の突出部３１Ｂ,３１Ｃと第３の電極３３の突出部３３Ｂ,３３Ｃとの間の距離は、棒状発光素子３５,３６の長さよりもやや短いことが好ましい。一例として、上記距離は、棒状発光素子３５,３６の長さが１０μｍである場合は、６〜９μｍとすることが望ましい。すなわち、上記距離は、棒状発光素子３５,３６の長さの６０〜９０％程度、より好ましくは上記長さの８０〜９０％とすることが望ましい。   The distance between the protruding portions 31B and 31C of the first electrode 31 and the protruding portions 33B and 33C of the third electrode 33 is preferably slightly shorter than the length of the rod-like light emitting elements 35 and 36. As an example, the distance is desirably 6 to 9 μm when the lengths of the rod-like light emitting elements 35 and 36 are 10 μm. That is, the distance is desirably about 60 to 90% of the length of the rod-like light emitting elements 35 and 36, more preferably 80 to 90% of the length.

次に、上記絶縁基板３４上に棒状発光素子３５,３６を配列する手順を説明する。まず、上記絶縁基板３４上に発光ダイオード３５,３６を含んだ溶液としてのイソプロピルアルコール(ＩＰＡ)を薄く塗布する。なお、上記溶液としては、ＩＰＡのほかに、エチレングリコール、プロピレングリコール、メタノール、エタノール、アセトン、またはそれらの混合物でもよく、他の有機物からなる液体、水などを用いることができる。ただし、液体を通じて金属電極３１,３２,３３間に大きな電流が流れてしまうと、金属電極３１,３２,３３間に所望の電圧差を印加できなくなってしまう。そのような場合には、金属電極３１,３２,３３を覆うように、絶縁基板３４表面全体に、１０ｎｍ〜３０ｎｍ程度の絶縁膜をコーティングすればよい。   Next, a procedure for arranging the rod-like light emitting elements 35 and 36 on the insulating substrate 34 will be described. First, isopropyl alcohol (IPA) as a solution containing the light emitting diodes 35 and 36 is thinly applied on the insulating substrate 34. In addition to IPA, the solution may be ethylene glycol, propylene glycol, methanol, ethanol, acetone, or a mixture thereof, and liquids such as other organic substances, water, and the like can be used. However, if a large current flows between the metal electrodes 31, 32, 33 through the liquid, a desired voltage difference cannot be applied between the metal electrodes 31, 32, 33. In such a case, an insulating film of about 10 nm to 30 nm may be coated on the entire surface of the insulating substrate 34 so as to cover the metal electrodes 31, 32, 33.

上記棒状発光素子３５,３６を含むＩＰＡを塗布する厚さは、次に棒状発光素子３５,３６を配列する工程で、棒状発光素子３５,３６が配列できるよう、液体中で棒状発光素子３５,３６が移動できる厚さである。したがって、棒状発光素子３５,３６の太さ以上であり、例えば、数μｍ〜数ｍｍである。塗布する厚さは薄すぎると、棒状発光素子３５,３６が移動し難くなり、厚すぎると、液体を乾燥する時間が長くなる。好ましくは、１００μｍ〜５００μｍである。また、ＩＰＡの量に対して、棒状発光素子の個数は、 １×１０４個／ｃｍ３ 〜 １×１０７個／ｃｍ３ が好ましい。 The thickness of applying the IPA including the rod-like light emitting elements 35, 36 is set so that the rod-like light emitting elements 35, 36 can be arranged in the next step of arranging the rod-like light emitting elements 35, 36. The thickness 36 is movable. Therefore, it is more than the thickness of the rod-shaped light emitting elements 35 and 36, for example, several micrometers-several mm. If the applied thickness is too thin, the rod-like light emitting elements 35 and 36 are difficult to move. If it is too thick, the time for drying the liquid becomes long. Preferably, it is 100 micrometers-500 micrometers. Further, the number of rod-like light emitting elements is preferably 1 × 10 4 / cm 3 to 1 × 10 7 / cm 3 with respect to the amount of IPA.

上記棒状発光素子３５,３６を含むＩＰＡを絶縁基板３４に塗布するために、棒状発光素子３５,３６を配列させる金属電極３１〜３３の外周囲に枠(図示せず)を形成し、その枠内に上記棒状発光素子３５,３６を含むＩＰＡを所望の厚さになるよう充填するとよい。しかし、上記棒状発光素子３５,３６を含むＩＰＡが粘性を有する場合は、枠を必要とせずに、所望の厚さに塗布することが可能である。上記ＩＰＡやエチレングリコール、プロピレングリコール、メタノール、エタノール、アセトン、またはそれらの混合物、或いは、他の有機物からなる液体、または水などの液体は、上記棒状発光素子３５,３６の配列工程のためには粘性が低いほど望ましく、また加熱により蒸発しやすい方が望ましい。   In order to apply IPA including the rod-like light emitting elements 35, 36 to the insulating substrate 34, a frame (not shown) is formed around the outer periphery of the metal electrodes 31 to 33 on which the rod-like light emitting elements 35, 36 are arranged. The IPA including the rod-like light emitting elements 35 and 36 may be filled into the desired thickness. However, when the IPA including the rod-like light emitting elements 35 and 36 has viscosity, it can be applied to a desired thickness without requiring a frame. The IPA, ethylene glycol, propylene glycol, methanol, ethanol, acetone, a mixture thereof, a liquid made of other organic substances, or a liquid such as water is used for the arrangement process of the rod-like light emitting elements 35 and 36. The lower the viscosity, the better, and the easier it is to evaporate by heating.

次に、金属電極３１,３３間に電位差を与える。また、金属電極３２には、一例として上記金属電極３１の電位と上記金属電極３３の電位の中間の電位を与える。また、上記金属電極３１と３３との間の電位差は、例えば、０．５Ｖもしくは１Ｖの電位差とする。なお、この金属電極３１と３３の電位差は、０．１〜１０Ｖを印加することができるが、０．１Ｖ以下では棒状発光素子３５,３６の配列姿勢が乱れ始め、１０Ｖ以上では金属電極間の絶縁が問題になり始める。したがって、上記電位差は０．５Ｖ〜５Ｖが好ましく、さらには、０．５Ｖ程度とするのが好ましい。金属電極３１に電位ＶＬを与え、金属電極３３に上記電位ＶＬよりも高い電位ＶＨ（ＶＬ＜ＶＨ)を与えると、金属電極３１には負電荷が誘起され、金属電極３３には正電荷が誘起される。この金属電極３１,３３に上記棒状発光素子３５,３６が接近すると、棒状発光素子３５,３６のうち金属電極３１に近い側に正電荷が誘起され、金属電極３３に近い側に負電荷が誘起される。上記棒状発光素子３５,３６に電荷が誘起されるのは静電誘導による。よって、上記棒状発光素子３５,３６は、金属電極３１,３２,３３間に生じる電気力線に沿った姿勢になると共に、各棒状発光素子３５,３６に誘起された電荷がほぼ等しいので、電荷による反発力により、ほぼ等間隔に一定方向に規則正しく配列する。このとき、金属電極３１、３２、３３の表面に絶縁膜がコーティングされており、かつ、金属電極３１、３３間に与える電位差が一定（ＤＣ）であると、金属電極３１、３３上にコーティングされた絶縁膜表面に、金属電極３１、３３の電位と反対極性のイオンが誘起されて溶液中の電界が非常に弱くなってしまう。そのような場合は、金属電極３１,３３間に交流電圧を印加することが好ましい。一例として、電極３２には基準電位(接地電位)を与え、電極３１と３３には互いに位相が１８０度異なる交流電源を印加する。これにより、金属電極３１、３３の電位と反対極性のイオンが誘起されるのを防ぎ、棒状発光素子３５、３６を正常に配列することができる。なお、金属電極３１,３３間に印加する交流電圧の周波数は、１０Ｈｚ〜１ＭＨｚとするのが好ましいが、交流電圧の周波数が１０Ｈｚ未満のときは、棒状発光素子３５、３６が激しく振動し、配列が乱される可能性がある。一方、金属電極３１,３３間に印加する交流電圧の周波数が１ＭＨｚを超える場合は、棒状発光素子３５、３６が金属電極３１,３３に吸着される力が弱くなり、外部の擾乱により配列が乱されることがある。このため、棒状発光素子３５、３６の配列の安定のためには、上記交流電圧の周波数を５０Ｈｚ〜１ｋＨｚとすることがより好ましい。さらに、上記交流電圧の波形は、正弦波に限らず、矩形波、三角波、ノコギリ波など、周期的に変動するものであればよい。なお、上記交流電圧の振幅は一例として０．５Ｖ程度とすることが好ましい。   Next, a potential difference is applied between the metal electrodes 31 and 33. Further, as an example, a potential intermediate between the potential of the metal electrode 31 and the potential of the metal electrode 33 is applied to the metal electrode 32. The potential difference between the metal electrodes 31 and 33 is, for example, a potential difference of 0.5V or 1V. The potential difference between the metal electrodes 31 and 33 can be 0.1 to 10 V, but the arrangement posture of the rod-like light emitting elements 35 and 36 begins to be disturbed at 0.1 V or less, and between the metal electrodes at 10 V or more. Insulation begins to become a problem. Therefore, the potential difference is preferably 0.5 V to 5 V, and more preferably about 0.5 V. When a potential VL is applied to the metal electrode 31 and a potential VH (VL <VH) higher than the potential VL is applied to the metal electrode 33, a negative charge is induced in the metal electrode 31 and a positive charge is induced in the metal electrode 33. Is done. When the rod-shaped light-emitting elements 35 and 36 approach the metal electrodes 31 and 33, positive charges are induced on the side close to the metal electrode 31 of the rod-shaped light-emitting elements 35 and 36, and negative charges are induced on the side close to the metal electrode 33. Is done. Electric charges are induced in the rod-like light emitting elements 35 and 36 by electrostatic induction. Therefore, the rod-like light emitting elements 35, 36 are in a posture along the electric lines of force generated between the metal electrodes 31, 32, 33, and the charges induced in the rod-like light emitting elements 35, 36 are substantially equal. Due to the repulsive force of, they are regularly arranged in a fixed direction at almost equal intervals. At this time, if the surface of the metal electrodes 31, 32, 33 is coated with an insulating film and the potential difference applied between the metal electrodes 31, 33 is constant (DC), the metal electrodes 31, 33 are coated. On the surface of the insulating film, ions having the opposite polarity to the potentials of the metal electrodes 31 and 33 are induced, and the electric field in the solution becomes very weak. In such a case, it is preferable to apply an AC voltage between the metal electrodes 31 and 33. As an example, a reference potential (ground potential) is applied to the electrode 32, and AC power supplies having phases different from each other by 180 degrees are applied to the electrodes 31 and 33. Thereby, it is possible to prevent the ions having the opposite polarity to the potentials of the metal electrodes 31 and 33 from being induced, and to arrange the rod-like light emitting elements 35 and 36 normally. The frequency of the alternating voltage applied between the metal electrodes 31 and 33 is preferably 10 Hz to 1 MHz. However, when the frequency of the alternating voltage is less than 10 Hz, the rod-like light emitting elements 35 and 36 vibrate vigorously and are arranged. May be disturbed. On the other hand, when the frequency of the alternating voltage applied between the metal electrodes 31 and 33 exceeds 1 MHz, the force with which the rod-like light emitting elements 35 and 36 are attracted to the metal electrodes 31 and 33 becomes weak, and the arrangement is disturbed by external disturbance. May be. For this reason, in order to stabilize the arrangement of the rod-like light emitting elements 35 and 36, it is more preferable that the frequency of the AC voltage is 50 Hz to 1 kHz. Furthermore, the waveform of the AC voltage is not limited to a sine wave, but may be any waveform that varies periodically, such as a rectangular wave, a triangular wave, and a sawtooth wave. For example, the amplitude of the AC voltage is preferably about 0.5V.

このように、本実施形態では、金属電極３１,３２,３３間に発生した外部電場により、各棒状発光素子３５,３６に電荷を発生させ、電荷の引力により金属電極３１,３２,３３に棒状発光素子３５,３６を吸着させるので、棒状発光素子３５,３６の大きさは、液体中で移動可能な大きさであることが必要である。したがって、棒状発光素子３５,３６の大きさ(最大寸法)の許容値は、液体の塗布量(塗布厚さ)により変化する。上記液体の塗布量が少ない場合は、各棒状発光素子３５,３６の大きさ(最大寸法)はナノスケールでなければならないが、液体の塗布量が多い場合は、各棒状発光素子３５,３６の大きさがミクロンオーダーであってもかまわない。   As described above, in this embodiment, the external electric field generated between the metal electrodes 31, 32, 33 generates charges in the respective rod-shaped light emitting elements 35, 36, and the metal electrodes 31, 32, 33 are formed in a rod shape by the attractive force of the charges. Since the light emitting elements 35 and 36 are adsorbed, the size of the rod-like light emitting elements 35 and 36 needs to be a size that can move in the liquid. Therefore, the allowable value of the size (maximum dimension) of the rod-like light emitting elements 35 and 36 varies depending on the liquid application amount (application thickness). When the application amount of the liquid is small, the size (maximum dimension) of each of the rod-like light emitting elements 35 and 36 must be nanoscale, but when the application amount of the liquid is large, each of the rod-like light emitting elements 35 and 36 The size may be in the micron order.

また、各棒状発光素子３５,３６が電気的に中性ではなく、正味として正または負に帯電している場合は、金属電極３１,３３間に静的な電位差(ＤＣ)を与えるだけでは、各棒状発光素子３５,３６を安定して配列することができない。例えば、棒状発光素子３５が正味として正に帯電した場合は、正電荷が誘起されている電極３３との引力が相対的に弱くなるために、棒状発光素子３５の金属電極３１,３３に対する配列が非対称になってしまう。そのような場合は、金属電極３１,３３に交流電圧を印加することが好ましい。一例として、電極３２には基準電位(接地電位)を与え、電極３１と３３には互いに位相が１８０度異なる交流電源を印加する。これにより、棒状発光素子３５が正味として帯電している場合でも、配列を対象に保つことができる。なお、金属電極３１,３３に印加する交流電圧の周波数は、１０Ｈｚ〜１ＭＨｚとするのが好ましいが、交流電圧の周波数が１０Ｈｚ未満のときは、棒状発光素子が激しく振動し、配列が乱される可能性がある。一方、金属電極３１,３３に印加する交流電圧の周波数が１ＭＨｚを超える場合は、棒状発光素子３５,３６が金属電極３１,３３に吸着される力が弱くなり、外部の擾乱により配列が乱されることがある。このため、棒状発光素子３５,３６の配列の安定のためには、上記交流電圧の周波数を５０Ｈｚ〜１ｋＨｚとすることがより好ましい。さらに、上記交流電圧の波形は、正弦波に限らず、矩形波、三角波、ノコギリ波など、周期的に変動するものであればよい。なお、上記交流電圧の振幅は一例として０．５Ｖ程度とすることが好ましい。   Further, when each rod-like light emitting element 35, 36 is not electrically neutral and is charged positively or negatively as a net, it is only necessary to give a static potential difference (DC) between the metal electrodes 31, 33. The rod-like light emitting elements 35 and 36 cannot be stably arranged. For example, when the rod-like light emitting element 35 is positively charged as a net, the attractive force with the electrode 33 in which the positive charge is induced becomes relatively weak, so that the arrangement of the rod-like light emitting element 35 with respect to the metal electrodes 31 and 33 is arranged. It becomes asymmetric. In such a case, it is preferable to apply an AC voltage to the metal electrodes 31 and 33. As an example, a reference potential (ground potential) is applied to the electrode 32, and AC power supplies having phases different from each other by 180 degrees are applied to the electrodes 31 and 33. Thereby, even when the rod-shaped light emitting element 35 is charged as a net, the arrangement can be kept as a target. The frequency of the alternating voltage applied to the metal electrodes 31 and 33 is preferably 10 Hz to 1 MHz. However, when the frequency of the alternating voltage is less than 10 Hz, the rod-like light emitting element vibrates vigorously and the arrangement is disturbed. there is a possibility. On the other hand, when the frequency of the AC voltage applied to the metal electrodes 31 and 33 exceeds 1 MHz, the force with which the rod-like light emitting elements 35 and 36 are attracted to the metal electrodes 31 and 33 becomes weak, and the arrangement is disturbed by external disturbance. Sometimes. For this reason, in order to stabilize the arrangement of the rod-like light emitting elements 35 and 36, it is more preferable that the frequency of the AC voltage is 50 Hz to 1 kHz. Furthermore, the waveform of the AC voltage is not limited to a sine wave, but may be any waveform that varies periodically, such as a rectangular wave, a triangular wave, and a sawtooth wave. For example, the amplitude of the AC voltage is preferably about 0.5V.

上記棒状発光素子３５,３６が配列を始めてしばらくすると、図４に模式的に示すように、第１電極３１の突出部３１Ｂ,３１Ｃと第３電極３３の突出部３３Ｂ,３３Ｃとの間に棒状発光素子３５,３６が配列する。各棒状発光素子３５,３６は、第１,第２,第３電極３１,３２,３３が延在している方向とは垂直な姿勢に整列して上記延在の方向にほぼ等間隔で配列した。上記突出部３１Ｂ,３１Ｃと突出部３３Ｂ,３３Ｃとの間に電界が集中すると共に棒状発光素子３５,３６に誘起された電荷により棒状発光素子３５,３６間に反発力が働いて、棒状発光素子３５,３６がほぼ等間隔に並ぶ。   When the rod-like light emitting elements 35 and 36 have been arranged for a while, a rod-like shape is formed between the projections 31B and 31C of the first electrode 31 and the projections 33B and 33C of the third electrode 33, as schematically shown in FIG. The light emitting elements 35 and 36 are arranged. The rod-like light emitting elements 35, 36 are aligned in a posture perpendicular to the direction in which the first, second, and third electrodes 31, 32, 33 extend and are arranged at substantially equal intervals in the extending direction. did. The electric field concentrates between the protrusions 31B and 31C and the protrusions 33B and 33C, and a repulsive force acts between the rod-like light-emitting elements 35 and 36 due to the charges induced in the rod-like light-emitting elements 35 and 36. 35 and 36 are arranged at almost equal intervals.

なお、図４に仮想線で示すように、上記溶液に含まれるが上記棒状発光素子３５,３６以外の棒状発光素子Ｚが、第１電極３１の基部３１Ａや第３電極３３の基部３３Ａに吸着する場合もある。この場合には、上記第１,第３電極３１,３３に交流電圧を印加しつつ、上記第１,第３電極３１,３３の基部３１Ａ,３３Ａの周囲にＩＰＡ等の溶液を流すことによって、上記第１電極３１や第３電極３３に吸着した棒状発光素子Ｚを除去できる。これにより、歩留まりの向上を図れる。   As shown by phantom lines in FIG. 4, the rod-shaped light emitting elements Z contained in the solution but other than the rod-shaped light emitting elements 35 and 36 are adsorbed on the base 31 </ b> A of the first electrode 31 and the base 33 </ b> A of the third electrode 33. There is also a case. In this case, by applying an AC voltage to the first and third electrodes 31 and 33 and flowing a solution such as IPA around the base portions 31A and 33A of the first and third electrodes 31 and 33, The rod-like light emitting element Z adsorbed on the first electrode 31 and the third electrode 33 can be removed. Thereby, the yield can be improved.

こうして、第１電極３１の突出部３１Ｂ,３１Ｃと第３電極３３の突出部３３Ｂ,３３Ｃとの間に、棒状発光素子３５,３６を配列させた後、基板３４を加熱または一定時間放置することにより、上記溶液の液体を蒸発させて乾燥させ、棒状発光素子３５,３６を金属電極２２と２３との間の電気力線に沿って、等間隔に配列させ固着させる。   Thus, after arranging the rod-like light emitting elements 35 and 36 between the protrusions 31B and 31C of the first electrode 31 and the protrusions 33B and 33C of the third electrode 33, the substrate 34 is heated or left for a certain period of time. Thus, the liquid of the solution is evaporated and dried, and the rod-like light emitting elements 35 and 36 are arranged and fixed at equal intervals along the lines of electric force between the metal electrodes 22 and 23.

以上のように、本実施形態の発光装置の製造方法によれば、いわゆる誘電泳動を用いて、上記第１,第２,第３の電極３１,３２,３３によって規定される位置に最大寸法が１００μｍ以下の微細な棒状発光素子３５,３６を配置できる。この製造方法では、棒状発光素子３５,３６の向きを一方に決めることが困難なので、第１,第３の電極３１,３３に対する棒状発光素子３５,３６の第１,第３の領域３５Ａ,３５Ｃの接続が入れ替わることがあるが、この場合でも、前述の第３実施形態は正常に発光するので、第３実施形態の発光装置の製造方法として好適である。   As described above, according to the method for manufacturing the light emitting device of this embodiment, the maximum dimension is set at a position defined by the first, second, and third electrodes 31, 32, 33 using so-called dielectrophoresis. Fine rod-like light emitting elements 35 and 36 of 100 μm or less can be arranged. In this manufacturing method, since it is difficult to determine the direction of the rod-like light emitting elements 35, 36 to one side, the first and third regions 35A, 35C of the rod-like light emitting elements 35, 36 with respect to the first and third electrodes 31, 33 are used. However, even in this case, the third embodiment described above emits light normally, which is suitable as a method for manufacturing the light emitting device of the third embodiment.

また、本実施形態の製造方法では、一例として２個の棒状発光素子を配列する場合を説明したが、本発明の発光装置の製造方法は、多数の微細な棒状発光素子を一度に第１,第２,第３電極間に配列,接続可能になるので、棒状発光ダイオードのサイズが小さく(一例として１００μｍ以下)であり、第１の電極３１と第３の電極３３との間に接続する棒状発光素子の個数が多数個(例えば１００個以上)である場合に特に有利である。   In the manufacturing method of the present embodiment, the case where two rod-like light emitting elements are arranged as an example has been described. However, the manufacturing method of the light emitting device of the present invention includes a number of fine rod-like light emitting elements that are first and Since the arrangement and connection can be made between the second and third electrodes, the size of the rod-shaped light emitting diode is small (for example, 100 μm or less), and the rod-shaped connection is made between the first electrode 31 and the third electrode 33. This is particularly advantageous when the number of light emitting elements is a large number (for example, 100 or more).

(第５の実施の形態)
次に、図６に、本発明の第５実施形態としてのＬＥＤディスプレイの１画素の回路を示す。この第５実施形態は、前述の第１〜第３実施形態で説明した発光装置のうちの１つを備え、図５に示すように、上記発光装置が有する棒状発光素子の１つを１画素の画素ＬＥＤ５１,５２として備える。図５において、符号Ｗ１,Ｗ３で示す箇所が第１,第３の電極に対応し、符号Ｗ２で示す箇所が第２の電極に対応している。 (Fifth embodiment)
Next, FIG. 6 shows a circuit of one pixel of the LED display as the fifth embodiment of the present invention. This fifth embodiment includes one of the light emitting devices described in the first to third embodiments, and as shown in FIG. 5, one of the rod-like light emitting elements of the light emitting device is one pixel. The pixel LEDs 51 and 52 are provided. In FIG. 5, locations indicated by reference characters W1 and W3 correspond to the first and third electrodes, and locations indicated by reference symbol W2 correspond to the second electrodes.

この第５実施形態のＬＥＤディスプレイは、アクティブマトリックスアドレス方式であり、選択電圧パルスが行アドレス線Ｘ１に供給され、データ信号が列アドレス線Ｙ１に送られる。上記選択電圧パルスがトランジスタＴ１のゲートに入力されて、トランジスタＴ１がオンすると、上記データ信号は、トランジスタＴ１のソースからドレインに伝達され、データ信号はキャパシタＣに電圧として記憶される。トランジスタＴ２は画素ＬＥＤ５１,５２の駆動用である。上記トランジスタＴ１からのデータ信号でトランジスタＴ２がオンすることにより、画素ＬＥＤ５１,５２は、上記直流電源Ｖｓによって駆動される。   The LED display of the fifth embodiment is an active matrix address system, and a selection voltage pulse is supplied to the row address line X1 and a data signal is sent to the column address line Y1. When the selection voltage pulse is input to the gate of the transistor T1 and the transistor T1 is turned on, the data signal is transmitted from the source to the drain of the transistor T1, and the data signal is stored as a voltage in the capacitor C. The transistor T2 is for driving the pixel LEDs 51 and 52. When the transistor T2 is turned on by the data signal from the transistor T1, the pixel LEDs 51 and 52 are driven by the DC power source Vs.

この実施形態のＬＥＤディスプレイは、図６に示す１画素がマトリックス状に配列されている。このマトリックス状に配列された各画素の画素ＬＥＤ５１,５２とトランジスタＴ１,Ｔ２が基板上に形成されている。この基板上において、各画素の画素ＬＥＤ５１,５２は、前述の第４実施形態で説明した製造方法でもって第１〜第３の電極に対して配列でき、上記画素ＬＥＤ５１,５２をなす棒状発光素子が各画素に複数配列された発光装置を製造できる。よって、本実施形態のＬＥＤディスプレイを容易に製造できて製造コストを抑えることができる。   In the LED display of this embodiment, one pixel shown in FIG. 6 is arranged in a matrix. Pixel LEDs 51 and 52 and transistors T1 and T2 of each pixel arranged in a matrix are formed on the substrate. On this substrate, the pixel LEDs 51 and 52 of each pixel can be arranged with respect to the first to third electrodes by the manufacturing method described in the above-described fourth embodiment, and the rod-like light emitting elements forming the pixel LEDs 51 and 52 Can be manufactured. Therefore, the LED display of this embodiment can be manufactured easily and manufacturing cost can be suppressed.

なお、ディスプレイ用バックライトや照明装置に用いる発光装置を、上述の第１,第２,第３実施形態で説明した発光装置のうちの１つとすることによって、製造を容易にでき製造コストを抑えることができる。また、上記各実施形態で説明した各棒状発光素子を作製する半導体としては、例えば、ＧａＮ、ＧａＡｓ、ＧａＰ、ＡｌＧａＡｓ、ＧａＡｓＰ、ＩｎＧａＮ、ＡｌＧａＮ、ＺｎＳｅ、ＡｌＧａＩｎＰ等の半導体を採用できる。また、上記各棒状発光素子を量子井戸構造を有するものとして発光効率を向上させてもよい。   Note that the light-emitting device used for the display backlight and the illumination device is one of the light-emitting devices described in the first, second, and third embodiments, thereby facilitating the manufacturing and reducing the manufacturing cost. be able to. Moreover, as a semiconductor which manufactures each rod-shaped light emitting element demonstrated by said each embodiment, semiconductors, such as GaN, GaAs, GaP, AlGaAs, GaAsP, InGaN, AlGaN, ZnSe, AlGaInP, are employable, for example. Moreover, you may improve luminous efficiency by making each said rod-shaped light emitting element have a quantum well structure.

１,３１ 第１の電極
１Ａ,３１Ａ 基部
１Ｂ,３１Ｂ,３１Ｃ 突出部
２,３２ 第２の電極
３,３３ 第３の電極
３Ａ,３３Ａ 基部
３Ｂ,３３Ｂ,３３Ｃ 突出部
４,３４ 基板
５,２１,３５,３６ 棒状発光素子
６,３５Ａ,３６Ａ Ｐ型の第１領域
７,３５Ｂ,３６Ｂ Ｎ型の第２領域
８,３５Ｃ,３６Ｃ Ｐ型の第３領域
１０,１１,４０,４１ 直流電源
Ｓ１,Ｓ２,Ｓ２１,Ｓ３１,Ｓ３２,Ｓ３３,Ｓ３４ ＰＮ接合面
２２ Ｐ型の円柱状のコア部
２２Ａ 外周面
２２Ｂ,２２Ｃ 端部
２３ Ｎ型の円筒状のシェル部
５１,５２ 画素ＬＥＤ DESCRIPTION OF SYMBOLS 1,31 1st electrode 1A, 31A Base 1B, 31B, 31C Protrusion 2,32 2nd electrode 3,33 3rd electrode 3A, 33A Base 3B, 33B, 33C Protrusion 4,34 Substrate 5,21 , 35, 36 Bar-shaped light emitting element 6, 35A, 36A P-type first region 7, 35B, 36B N-type second region 8, 35C, 36C P-type third region 10, 11, 40, 41 DC power supply S1 , S2, S21, S31, S32, S33, S34 PN junction surface 22 P-type cylindrical core portion 22A Outer peripheral surface 22B, 22C End portion 23 N-type cylindrical shell portion 51, 52 Pixel LED

Claims (9)

基板上に形成された第１の電極と、
上記基板上に形成された第２の電極と、
上記基板上に形成された第３の電極と、
第１導電型の第１の領域と第２導電型の第２の領域と第１導電型の第３の領域とを有すると共に上記第１,第２,第３の領域が上記第１,第２,第３の領域の順に並んだ棒状発光素子と
を備え、
上記第１の領域が上記第１の電極または第３の電極の一方に接続され、上記第２の領域が上記第２の電極に接続され、上記第３の領域が上記第１の電極または第３の電極の他方に接続され、
さらに、上記第１の電極または第３の電極の一方から上記第１の領域と第２の領域を順に経由して上記第２の電極に電流が流れる第１の通電方向と、上記第２の電極から上記第２の領域と第１の領域を順に経由して上記第１の電極または第３の電極の一方に電流が流れる第２の通電方向とのうちのいずれか一方の通電方向に通電されるか、もしくは、上記第１の電極または第３の電極の他方から上記第３の領域と第２の領域を順に経由して上記第２の電極に電流が流れる第３の通電方向と、上記第２の電極から上記第２の領域と第３の領域を順に経由して上記第１の電極または第３の電極の他方に電流が流れる第４の通電方向とのうちのいずれか一方の通電方向に通電されることを特徴とする発光装置。 A first electrode formed on a substrate;
A second electrode formed on the substrate;
A third electrode formed on the substrate;
A first conductivity type first region, a second conductivity type second region, and a first conductivity type third region, and the first, second, and third regions are the first and second regions; A rod-shaped light emitting element arranged in the order of 2, 3rd region,
The first region is connected to one of the first electrode or the third electrode, the second region is connected to the second electrode, and the third region is connected to the first electrode or the second electrode. Connected to the other of the three electrodes,
Further, a first energization direction in which a current flows from one of the first electrode or the third electrode to the second electrode through the first region and the second region in order, and the second electrode Energization in one energization direction of the second energization direction in which current flows from the electrode to one of the first electrode or the third electrode through the second region and the first region in order. Or a third energization direction in which a current flows from the other of the first electrode or the third electrode to the second electrode through the third region and the second region in order, One of a fourth energization direction in which current flows from the second electrode to the other of the first electrode or the third electrode through the second region and the third region in order. A light-emitting device that is energized in an energization direction. 基板上に形成された第１の電極と、
上記基板上に形成された第２の電極と、
上記基板上に形成された第３の電極と、
第１導電型の第１の領域と第２導電型の第２の領域と第１導電型の第３の領域とを有すると共に上記第１,第２,第３の領域が上記第１,第２,第３の領域の順に並んだ棒状発光素子と
を備え、
上記第１の領域が上記第１の電極または第３の電極の一方に接続され、上記第２の領域が上記第２の電極に接続され、上記第３の領域が上記第１の電極または第３の電極の他方に接続され、
さらに、上記第１の電極または第３の電極の一方から上記第１の領域と第２の領域を順に経由して上記第２の電極に電流が流れると共に上記第１の電極または第３の電極の他方から上記第３の領域と第２の領域を順に経由して上記第２の電極に電流が流れる第１の通電方向と、上記第２の電極から上記第２の領域と第１の領域を順に経由して上記第１の電極または第３の電極の一方に電流が流れると共に上記第２の電極から上記第２の領域と第３の領域を順に経由して上記１の電極または第３の電極の他方に電流が流れる第２の通電方向とのうちのいずれか一方の通電方向に通電されることを特徴とする発光装置。 A first electrode formed on a substrate;
A second electrode formed on the substrate;
A third electrode formed on the substrate;
A first conductivity type first region, a second conductivity type second region, and a first conductivity type third region, and the first, second, and third regions are the first and second regions; A rod-shaped light emitting element arranged in the order of 2, 3rd region,
The first region is connected to one of the first electrode or the third electrode, the second region is connected to the second electrode, and the third region is connected to the first electrode or the second electrode. Connected to the other of the three electrodes,
In addition, a current flows from one of the first electrode or the third electrode to the second electrode through the first region and the second region in order, and the first electrode or the third electrode. A first energization direction in which a current flows from the other electrode to the second electrode through the third region and the second region in order, and the second region and the first region from the second electrode. Current flows to one of the first electrode or the third electrode through the first electrode and the first electrode or the third electrode from the second electrode through the second region and the third region in order. A light emitting device characterized by being energized in one of the energization directions of the second energization direction in which current flows in the other of the electrodes. 請求項１または２に記載の発光装置において、
上記第１の領域の一端部と上記第２の領域の他端部とが接合されていると共に上記第２の領域の一端部と上記第３の領域の他端部とが接合されており、
上記第１の領域の他端部が上記第１の電極または第３の電極の一方に接続されていると共に上記第３の領域の一端部が上記第１の電極または第３の電極の他方に接続されていることを特徴とする発光装置。 The light emitting device according to claim 1 or 2,
One end of the first region and the other end of the second region are joined, and one end of the second region and the other end of the third region are joined,
The other end of the first region is connected to one of the first electrode or the third electrode, and one end of the third region is connected to the other of the first electrode or the third electrode. A light-emitting device that is connected. 請求項１または２に記載の発光装置において、
上記棒状発光素子は、
上記第１の領域と上記第３の領域とが棒状に連なって構成されていると共に上記第２の領域を貫通しているコア部と、
上記第２の領域から構成されていると共に上記コア部の外周面を被覆するシェル部とを備え、
上記シェル部の両端から上記コア部の上記第１の領域と第３の領域が露出していることを特徴とする発光装置。 The light emitting device according to claim 1 or 2,
The rod-like light emitting element is
A core part configured such that the first region and the third region are connected in a rod shape and penetrating the second region;
A shell portion configured from the second region and covering an outer peripheral surface of the core portion;
The light emitting device, wherein the first region and the third region of the core portion are exposed from both ends of the shell portion. 請求項１から４のいずれか１つに記載の発光装置において、
上記棒状発光素子の最大寸法が１００μｍ以下であることを特徴とする発光装置。 The light emitting device according to any one of claims 1 to 4,
The light emitting device characterized in that the maximum dimension of the rod-like light emitting element is 100 μm or less. 第１の電極と第２の電極および第３の電極を有する基板を用意する工程と、
上記基板に、第１導電型の第１の領域と第２導電型の第２の領域と第１導電型の第３の領域とを有すると共に上記第１,第２,第３の領域が上記第１,第２,第３の領域の順に並んでいて最大寸法が１００μｍ以下の複数の棒状発光素子を含んだ溶液を塗布する工程と、
上記第１の電極と第３の電極に電圧を印加して上記複数の棒状発光素子を上記第１,第２,第３の電極によって規定される位置に配列させる工程とを備えることを特徴とする発光装置の製造方法。 Providing a substrate having a first electrode, a second electrode, and a third electrode;
The substrate has a first conductivity type first region, a second conductivity type second region, and a first conductivity type third region, and the first, second, and third regions are Applying a solution containing a plurality of rod-like light emitting elements arranged in the order of the first, second and third regions and having a maximum dimension of 100 μm or less;
Applying a voltage to the first electrode and the third electrode to arrange the plurality of rod-like light emitting elements at positions defined by the first, second, and third electrodes, A method for manufacturing a light emitting device. 請求項１から５のいずれか１つに記載の発光装置を有するディスプレイ用バックライト。   A display backlight comprising the light-emitting device according to claim 1. 請求項１から５のいずれか１つに記載の発光装置を有する照明装置。   An illuminating device comprising the light emitting device according to claim 1. 請求項１から５のいずれか１つに記載の発光装置を有するＬＥＤディスプレイ。   The LED display which has a light-emitting device as described in any one of Claim 1 to 5.
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