JP2011082563A - 半導体およびその製造方法 - Google Patents
半導体およびその製造方法 Download PDFInfo
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- JP2011082563A JP2011082563A JP2010292773A JP2010292773A JP2011082563A JP 2011082563 A JP2011082563 A JP 2011082563A JP 2010292773 A JP2010292773 A JP 2010292773A JP 2010292773 A JP2010292773 A JP 2010292773A JP 2011082563 A JP2011082563 A JP 2011082563A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000006911 nucleation Effects 0.000 claims abstract description 9
- 238000010899 nucleation Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000956 alloy Substances 0.000 abstract description 32
- 229910045601 alloy Inorganic materials 0.000 abstract description 32
- 238000005204 segregation Methods 0.000 abstract description 10
- 230000006866 deterioration Effects 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 description 48
- 229910052738 indium Inorganic materials 0.000 description 21
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 21
- 229910002704 AlGaN Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 230000003595 spectral effect Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001199 N alloy Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000007648 laser printing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000000348 solid-phase epitaxy Methods 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- WFZFMHDDZRBTFH-CZEFNJPISA-N 2-[(e)-2-(5-carbamimidoyl-1-benzofuran-2-yl)ethenyl]-1-benzofuran-5-carboximidamide;dihydrochloride Chemical compound Cl.Cl.NC(=N)C1=CC=C2OC(/C=C/C=3OC4=CC=C(C=C4C=3)C(=N)N)=CC2=C1 WFZFMHDDZRBTFH-CZEFNJPISA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 102000005962 receptors Human genes 0.000 description 1
- 108020003175 receptors Proteins 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013535 sea water Substances 0.000 description 1
- ORFSSYGWXNGVFB-UHFFFAOYSA-N sodium 4-amino-6-[[4-[4-[(8-amino-1-hydroxy-5,7-disulfonaphthalen-2-yl)diazenyl]-3-methoxyphenyl]-2-methoxyphenyl]diazenyl]-5-hydroxynaphthalene-1,3-disulfonic acid Chemical compound COC1=C(C=CC(=C1)C2=CC(=C(C=C2)N=NC3=C(C4=C(C=C3)C(=CC(=C4N)S(=O)(=O)O)S(=O)(=O)O)O)OC)N=NC5=C(C6=C(C=C5)C(=CC(=C6N)S(=O)(=O)O)S(=O)(=O)O)O.[Na+] ORFSSYGWXNGVFB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
【解決手段】本発明にかかる半導体構造は、核形成層と、前記核形成層上に成長させた厚いInGaN層と、前記厚いInGaN層上に形成した活性層と、を備える。
【選択図】図1
Description
Claims (2)
- 基板上に直接形成され、かつ前記基板を均一に覆うアモルファス核形成層と、
前記アモルファス核形成層上に成長させた厚さ0.5μm以上100μm以下のInGaN層と、
前記InGaN層上に形成した活性層と、
を備え、
前記InGaN層は、n−電極とコンタクトする横型のnコンタクト層であることを特徴とする半導体。 - 基板上に直接形成され、かつ前記基板を均一に覆うアモルファス核形成層を形成する工程と、
前記アモルファス核形成層上に厚さ0.5μm以上100μm以下のInGaN層を形成する工程と、
n−電極とコンタクトする横型のnコンタクト層である前記InGaN層上に活性層を形成する工程と、
を含むことを特徴とする半導体の形成方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/127,038 US6233265B1 (en) | 1998-07-31 | 1998-07-31 | AlGaInN LED and laser diode structures for pure blue or green emission |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21460299A Division JP2000058920A (ja) | 1998-07-31 | 1999-07-29 | 半導体およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
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JP2011082563A true JP2011082563A (ja) | 2011-04-21 |
Family
ID=22428012
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21460299A Pending JP2000058920A (ja) | 1998-07-31 | 1999-07-29 | 半導体およびその製造方法 |
JP2010292773A Pending JP2011082563A (ja) | 1998-07-31 | 2010-12-28 | 半導体およびその製造方法 |
Family Applications Before (1)
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---|---|---|---|
JP21460299A Pending JP2000058920A (ja) | 1998-07-31 | 1999-07-29 | 半導体およびその製造方法 |
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US (3) | US6233265B1 (ja) |
EP (1) | EP0977279A3 (ja) |
JP (2) | JP2000058920A (ja) |
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US6285696B1 (en) | 2001-09-04 |
EP0977279A2 (en) | 2000-02-02 |
US6233265B1 (en) | 2001-05-15 |
JP2000058920A (ja) | 2000-02-25 |
EP0977279A3 (en) | 2001-01-03 |
US6345063B1 (en) | 2002-02-05 |
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