JP2011082540A - 多相超低k誘電 - Google Patents
多相超低k誘電 Download PDFInfo
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- JP2011082540A JP2011082540A JP2010256739A JP2010256739A JP2011082540A JP 2011082540 A JP2011082540 A JP 2011082540A JP 2010256739 A JP2010256739 A JP 2010256739A JP 2010256739 A JP2010256739 A JP 2010256739A JP 2011082540 A JP2011082540 A JP 2011082540A
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- dielectric
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B5/00—Turning-machines or devices specially adapted for particular work; Accessories specially adapted therefor
- B23B5/18—Turning-machines or devices specially adapted for particular work; Accessories specially adapted therefor for turning crankshafts, eccentrics, or cams, e.g. crankpin lathes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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Abstract
【解決手段】弾性係数および硬度が改善した多相超低k膜38、ならびにこれを形成するための様々な方法を提供する。多相超低k誘電膜38は、Si、C、O、およびHの原子を含み、誘電率が約2.4以下であり、ナノサイズの孔または空隙を有し、弾性係数が約5以上であり、硬度が約0.7以上である。好適な多相超低k誘電膜38は、Si、C、O、およびHの原子を含み、誘電率が約2.2以下であり、ナノサイズの孔または空隙を有し、弾性係数が約3以上であり、硬度が約0.3以上である。
【選択図】図5
Description
Claims (1)
- Si、C、O、およびHの原子を含む多相超低k誘電膜であって、前記膜は、誘電率が2.4以下であり、ナノサイズの孔または空隙を有し、弾性係数が5GPa以上であり、硬度が0.7GPa以上である、多相超低k誘電膜であって、共有結合ネットワークにおけるSi、C、O、およびHから成る水素化酸化シリコン炭素材料(SiCOH)の第1の相を有し、少なくとも別の1相が主にCおよびH原子から成る、多相超低k誘電膜。
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US10/390,801 US7288292B2 (en) | 2003-03-18 | 2003-03-18 | Ultra low k (ULK) SiCOH film and method |
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JP2010256739A Pending JP2011082540A (ja) | 2003-03-18 | 2010-11-17 | 多相超低k誘電 |
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DE602004028922D1 (de) | 2010-10-14 |
US20050276930A1 (en) | 2005-12-15 |
EP1617957A2 (en) | 2006-01-25 |
JP2012109589A (ja) | 2012-06-07 |
TWI281707B (en) | 2007-05-21 |
TW200428493A (en) | 2004-12-16 |
WO2004083495A2 (en) | 2004-09-30 |
US20090297823A1 (en) | 2009-12-03 |
CN1787881B (zh) | 2012-12-26 |
EP1617957A4 (en) | 2007-03-28 |
JP2006521019A (ja) | 2006-09-14 |
CN1787881A (zh) | 2006-06-14 |
EP1617957B1 (en) | 2010-09-01 |
KR20050110649A (ko) | 2005-11-23 |
ATE479729T1 (de) | 2010-09-15 |
US7288292B2 (en) | 2007-10-30 |
JP5511781B2 (ja) | 2014-06-04 |
WO2004083495A3 (en) | 2005-02-03 |
US20080026203A1 (en) | 2008-01-31 |
KR100724508B1 (ko) | 2007-06-07 |
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