JP2011063504A5 - - Google Patents

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JP2011063504A5
JP2011063504A5 JP2010182306A JP2010182306A JP2011063504A5 JP 2011063504 A5 JP2011063504 A5 JP 2011063504A5 JP 2010182306 A JP2010182306 A JP 2010182306A JP 2010182306 A JP2010182306 A JP 2010182306A JP 2011063504 A5 JP2011063504 A5 JP 2011063504A5
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nitride semiconductor
manufacturing
nitride
plane
substrate
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JP2010182306A
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JP2011063504A (en
JP5447289B2 (en
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同一材料からなる複数のシード基板上に単一の窒化物半導体層を成長させて窒化物半導体結晶を得る工程と、前記窒化物半導体結晶をスライスして基板とする工程と、を有する窒化物半導体基板の製造方法において、
前記基板のオフ角分布が前記複数のシード基板のオフ角分布よりも少なくなるように、前記複数のシード基板を徐々にオフ角を変化させて配置して、前記単一の半導体層を成長させる
ことを特徴とする窒化物半導体基板の製造方法。 A nitride semiconductor comprising: a step of growing a single nitride semiconductor layer on a plurality of seed substrates made of the same material to obtain a nitride semiconductor crystal; and a step of slicing the nitride semiconductor crystal into a substrate In the method for manufacturing a substrate ,
The plurality of seed substrates are arranged by gradually changing the off angle so that the off-angle distribution of the substrate is smaller than the off-angle distribution of the plurality of seed substrates, and the single semiconductor layer is grown. A method for manufacturing a nitride semiconductor substrate . 前記複数のシード基板は六方晶系半導体からなることを特徴とする、請求項１に記載の製造方法。The manufacturing method according to claim 1, wherein the plurality of seed substrates are made of a hexagonal semiconductor. 前記複数のシード基板の成長面は略｛１０−１０｝面、略｛１１−２０｝面、略（０００１）面および略（０００−１）面から選ばれるいずれか１であることを特徴とする請求項２に記載の製造方法。The growth surface of the plurality of seed substrates is any one selected from a substantially {10-10} plane, a substantially {11-20} plane, a substantially (0001) plane, and a substantially (000-1) plane. The manufacturing method according to claim 2. 前記単一の窒化物半導体層は窒化ガリウム、窒化アルミニウムおよび窒化インジウム並びにこれらの混晶から選ばれる少なくとも１であることを特徴とする請求項１〜３のいずれか１項に記載の製造方法。 Wherein the single nitride semiconductor layer is gallium nitride, manufacturing process according to any one of claims 1-3, characterized in that at least one selected from indium aluminum nitride and nitride and mixed crystal thereof .
JP2010182306A 2009-08-19 2010-08-17 Nitride semiconductor crystal and manufacturing method thereof Active JP5447289B2 (en)

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JP2009190070 2009-08-19
JP2009190070 2009-08-19
JP2010182306A JP5447289B2 (en) 2009-08-19 2010-08-17 Nitride semiconductor crystal and manufacturing method thereof

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JP2011063504A JP2011063504A (en) 2011-03-31
JP2011063504A5 true JP2011063504A5 (en) 2013-08-08
JP5447289B2 JP5447289B2 (en) 2014-03-19

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Publication number Priority date Publication date Assignee Title
JP5757068B2 (en) * 2010-08-02 2015-07-29 住友電気工業株式会社 GaN crystal growth method
JP2013001624A (en) * 2011-06-21 2013-01-07 Sumitomo Electric Ind Ltd Group iii nitride composite substrate, and evaluation method thereof
WO2013058350A1 (en) 2011-10-21 2013-04-25 三菱化学株式会社 Method for producing nitride semiconductor crystal of group 13 metal of periodic table, and nitride semiconductor crystal of group 13 metal of periodic table produced by said production method
JP6036155B2 (en) * 2011-10-21 2016-11-30 三菱化学株式会社 GaN crystal
JP5743928B2 (en) * 2012-03-05 2015-07-01 日立金属株式会社 Gallium nitride semiconductor epitaxial wafer and method for manufacturing the same
EP3031958B1 (en) 2013-08-08 2017-11-01 Mitsubishi Chemical Corporation Self-standing gan substrate and method for producing semiconductor device
CN105917035B (en) * 2014-01-17 2019-06-18 三菱化学株式会社 GaN substrate, the manufacturing method of GaN substrate, the manufacturing method of the manufacturing method of GaN crystallization and semiconductor devices
JP6129784B2 (en) * 2014-05-26 2017-05-17 住友化学株式会社 Method for manufacturing group III nitride substrate
JP6405889B2 (en) * 2014-10-29 2018-10-17 三菱ケミカル株式会社 GaN substrate manufacturing method
US10364510B2 (en) 2015-11-25 2019-07-30 Sciocs Company Limited Substrate for crystal growth having a plurality of group III nitride seed crystals arranged in a disc shape
JP6735647B2 (en) 2016-09-29 2020-08-05 株式会社サイオクス Method for manufacturing nitride crystal substrate
JP6512334B2 (en) * 2018-04-12 2019-05-15 三菱ケミカル株式会社 Method of manufacturing GaN substrate
JP7006751B2 (en) * 2020-10-07 2022-01-24 三菱ケミカル株式会社 GaN single crystal and GaN single crystal manufacturing method
JP7327532B2 (en) * 2020-10-07 2023-08-16 三菱ケミカル株式会社 GaN Single Crystal and GaN Single Crystal Manufacturing Method
WO2023190969A1 (en) * 2022-03-31 2023-10-05 三菱ケミカル株式会社 GaN CRYSTAL AND GaN WAFER
CN115287767B (en) * 2022-08-29 2023-04-25 松山湖材料实验室 Annealing device, aluminum nitride product, preparation method of aluminum nitride product and photoelectric device

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US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
JP4915128B2 (en) * 2005-04-11 2012-04-11 日亜化学工業株式会社 Nitride semiconductor wafer and method for manufacturing the same
JP5332168B2 (en) * 2006-11-17 2013-11-06 住友電気工業株式会社 Method for producing group III nitride crystal
JP4952616B2 (en) * 2008-03-04 2012-06-13 日立電線株式会社 Manufacturing method of nitride semiconductor substrate
JP5120285B2 (en) * 2009-02-05 2013-01-16 日立電線株式会社 III-V nitride semiconductor free-standing substrate manufacturing method

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