JP2011040783A - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- JP2011040783A JP2011040783A JP2010235362A JP2010235362A JP2011040783A JP 2011040783 A JP2011040783 A JP 2011040783A JP 2010235362 A JP2010235362 A JP 2010235362A JP 2010235362 A JP2010235362 A JP 2010235362A JP 2011040783 A JP2011040783 A JP 2011040783A
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- nitride semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 55
- 239000012535 impurity Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 78
- 230000000694 effects Effects 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910019080 Mg-H Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】基板100と、前記基板上に形成されたn型窒化物半導体層120と、前記n型窒化物半導体層上の一部分に形成された活性層130と、前記活性層上に形成されたp型窒化物半導体層140と、前記p型窒化物半導体層上に形成され、p型不純物が1×1020/cm3以上ドーピングされているp型コンタクト層150と、前記p型コンタクト層上に形成された透明酸化電極160と、前記透明酸化電極上に形成されたp型電極170と、前記活性層が形成されない前記n型窒化物半導体層上に形成されたn型電極180とで、窒化物半導体発光素子を構成する。
【選択図】図1
Description
110 バッファ層
120 n型窒化物半導体層
130 活性層
140 p型窒化物半導体層
150 p型コンタクト層
160 透明酸化電極
170 p型電極
180 n型電極
Claims (4)
- 基板と、
前記基板上に形成されたn型窒化物半導体層と、
前記n型窒化物半導体層上の一部分に形成された活性層と、
前記活性層上に形成されたp型窒化物半導体層と、
前記p型窒化物半導体層上に形成され、p型不純物でドーピングされ、前記p型不純物のドーピング濃度より低いドーピング濃度でn型不純物がドーピングされているp型コンタクト層と、
前記p型コンタクト層上に形成された透明酸化電極と、
前記透明酸化電極上に形成されたp型電極と、
前記活性層が形成されない前記n型窒化物半導体層上に形成されたn型電極と、を含む窒化物半導体発光素子。 - 前記透明酸化電極は、n型特性を有するITO、ZnO、AZO、CuInO2、Zn1-xAlxO、Zn1-xMgxO、SnO2、RuO2、PdO、Bi2Ru2O7及びBi2Ir2O7で構成された群から選択される何れか一つからなることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記透明酸化電極は、少なくとも1層以上に構成されたことを特徴とする請求項1または2に記載の窒化物半導体発光素子。
- 前記透明酸化電極は、n型又はp型導電性不純物がドーピングされたことを特徴とする請求項1〜3のいずれか1項に記載の窒化物半導体発光素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060105772A KR100853851B1 (ko) | 2006-10-30 | 2006-10-30 | 질화물 반도체 발광소자 |
Related Parent Applications (1)
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JP2007255480A Division JP2008112983A (ja) | 2006-10-30 | 2007-09-28 | 窒化物半導体発光素子 |
Publications (1)
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JP2011040783A true JP2011040783A (ja) | 2011-02-24 |
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JP2007255480A Pending JP2008112983A (ja) | 2006-10-30 | 2007-09-28 | 窒化物半導体発光素子 |
JP2010235362A Pending JP2011040783A (ja) | 2006-10-30 | 2010-10-20 | 窒化物半導体発光素子 |
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JP2007255480A Pending JP2008112983A (ja) | 2006-10-30 | 2007-09-28 | 窒化物半導体発光素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8203170B2 (ja) |
JP (2) | JP2008112983A (ja) |
KR (1) | KR100853851B1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110081771A1 (en) * | 2009-10-07 | 2011-04-07 | Applied Materials, Inc. | Multichamber split processes for led manufacturing |
KR101222479B1 (ko) * | 2011-04-04 | 2013-01-15 | 일진엘이디(주) | 불순물을 이용하여 발광 특성이 우수한 질화물계 발광소자 |
TWI581453B (zh) * | 2014-12-23 | 2017-05-01 | 錼創科技股份有限公司 | 半導體發光元件 |
CN105633236B (zh) * | 2016-01-06 | 2019-04-05 | 厦门市三安光电科技有限公司 | 发光二极管及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09293936A (ja) * | 1996-02-26 | 1997-11-11 | Toshiba Corp | 半導体装置 |
JP2002353144A (ja) * | 2001-05-23 | 2002-12-06 | Ricoh Co Ltd | p型III族窒化物半導体およびその作製方法および半導体装置 |
JP2006287189A (ja) * | 2005-03-30 | 2006-10-19 | Samsung Electro Mech Co Ltd | 3族窒化物発光素子 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6657300B2 (en) * | 1998-06-05 | 2003-12-02 | Lumileds Lighting U.S., Llc | Formation of ohmic contacts in III-nitride light emitting devices |
TW515116B (en) * | 2001-12-27 | 2002-12-21 | South Epitaxy Corp | Light emitting diode structure |
JP4259268B2 (ja) * | 2003-10-20 | 2009-04-30 | 豊田合成株式会社 | 半導体発光素子 |
US7417264B2 (en) * | 2003-12-22 | 2008-08-26 | Samsung Electronics Co., Ltd. | Top-emitting nitride-based light emitting device and method of manufacturing the same |
JP4977957B2 (ja) * | 2004-03-29 | 2012-07-18 | 日亜化学工業株式会社 | 半導体発光素子 |
US7615798B2 (en) * | 2004-03-29 | 2009-11-10 | Nichia Corporation | Semiconductor light emitting device having an electrode made of a conductive oxide |
US20050236636A1 (en) * | 2004-04-23 | 2005-10-27 | Supernova Optoelectronics Corp. | GaN-based light-emitting diode structure |
KR100616592B1 (ko) | 2004-06-29 | 2006-08-28 | 삼성전기주식회사 | In 첨가 p형 질화물 반도체층을 갖는 질화물 반도체발광소자 |
KR100611639B1 (ko) * | 2004-07-23 | 2006-08-11 | 광주과학기술원 | 탑에미트형 질화물계 발광소자 및 그 제조방법 |
JP2006261358A (ja) * | 2005-03-17 | 2006-09-28 | Fujitsu Ltd | 半導体発光素子 |
KR100638813B1 (ko) * | 2005-04-15 | 2006-10-27 | 삼성전기주식회사 | 플립칩형 질화물 반도체 발광소자 |
-
2006
- 2006-10-30 KR KR1020060105772A patent/KR100853851B1/ko active IP Right Grant
-
2007
- 2007-09-28 JP JP2007255480A patent/JP2008112983A/ja active Pending
- 2007-10-01 US US11/905,434 patent/US8203170B2/en active Active
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2010
- 2010-10-20 JP JP2010235362A patent/JP2011040783A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09293936A (ja) * | 1996-02-26 | 1997-11-11 | Toshiba Corp | 半導体装置 |
JP2002353144A (ja) * | 2001-05-23 | 2002-12-06 | Ricoh Co Ltd | p型III族窒化物半導体およびその作製方法および半導体装置 |
JP2006287189A (ja) * | 2005-03-30 | 2006-10-19 | Samsung Electro Mech Co Ltd | 3族窒化物発光素子 |
Also Published As
Publication number | Publication date |
---|---|
KR100853851B1 (ko) | 2008-08-22 |
KR20080038628A (ko) | 2008-05-07 |
JP2008112983A (ja) | 2008-05-15 |
US20080099782A1 (en) | 2008-05-01 |
US8203170B2 (en) | 2012-06-19 |
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