JP2011027643A - Infrared sensor - Google Patents

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JP2011027643A
JP2011027643A JP2009175859A JP2009175859A JP2011027643A JP 2011027643 A JP2011027643 A JP 2011027643A JP 2009175859 A JP2009175859 A JP 2009175859A JP 2009175859 A JP2009175859 A JP 2009175859A JP 2011027643 A JP2011027643 A JP 2011027643A
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infrared
package
transmitting member
infrared transmitting
detection element
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Takeshi Yoshida
岳司 吉田
Takuya Mino
卓哉 美濃
Hiroshi Yamanaka
山中　　浩
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Panasonic Electric Works Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an infrared sensor having high sensitivity, low cost and a small environmental load, capable of suppressing peeling of an infrared reflection prevention film or an infrared optical filter film. <P>SOLUTION: In the infrared sensor that includes a package 2 for storing an infrared detection element 1, and a first infrared transmitting member 41 and a second infrared transmitting member 42 for blocking an opening part 2a of the package 2, a space enclosed by the package 2 and the first infrared transmitting member 41 has a vacuum atmosphere. The first infrared transmitting member 41 is formed of ZnS, and fixed to the package 2 by a bonding part 51 including a lead-free glass frit so as to block the opening part 2a from the inside of the package 2, and the second infrared transmitting member 42, wherein the infrared optical filter film 43 and the infrared reflection preventing film 44 are laminated together is formed of Si, and fixed to the package 2 with a bonding part 52 comprising a lead-free conductive adhesive usable at a low temperature, in comparison with the glass frit. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

本発明は、赤外線センサに関するものである。   The present invention relates to an infrared sensor.

従来から、図８に示すように、赤外線を検出する熱型の赤外線検出素子１’と、当該赤外線検出素子１’を収納するパッケージ２’と、赤外線透過材料であるＺｎＳにより形成されパッケージ２’の開口部２ａ’の前方に配置された第１のレンズ３１と、赤外線透過材料であるＳｉにより形成されパッケージ２’の開口部２ａ’を閉塞する形でパッケージ２’に固着された第２のレンズ３２とを備え、第１のレンズ３１と第２のレンズ３２とで赤外線検出素子１’に赤外線を集光する光学系を構成してなる赤外線センサが提案されている（特許文献１参照）。なお、この赤外線センサでは、光学系を第１のレンズ３１と第２のレンズ３２とで構成してあるので、光学系の収差を小さくすることができる。   Conventionally, as shown in FIG. 8, a thermal infrared detecting element 1 ′ for detecting infrared rays, a package 2 ′ for housing the infrared detecting element 1 ′, and a package 2 ′ formed of ZnS which is an infrared transmitting material. The first lens 31 disposed in front of the opening 2a ′ and the second lens 31 made of Si, which is an infrared transmitting material, is fixed to the package 2 ′ so as to close the opening 2a ′ of the package 2 ′. There has been proposed an infrared sensor that includes a lens 32 and includes an optical system that condenses infrared rays on the infrared detection element 1 ′ with the first lens 31 and the second lens 32 (see Patent Document 1). . In this infrared sensor, since the optical system is composed of the first lens 31 and the second lens 32, the aberration of the optical system can be reduced.

ここにおいて、図８に示した構成の赤外線センサでは、第１のレンズ３１の前面および後面それぞれに赤外線反射防止膜が積層され、第２のレンズ３２の前面に赤外線反射防止膜が積層されるとともに、第２のレンズ３２の後面に波長が８μｍ未満の赤外線を遮断する赤外線光学フィルタ膜（波長選択性フィルタ膜）が積層されている。   Here, in the infrared sensor having the configuration shown in FIG. 8, an infrared antireflection film is laminated on each of the front and rear surfaces of the first lens 31, and an infrared antireflection film is laminated on the front surface of the second lens 32. An infrared optical filter film (wavelength selective filter film) that blocks infrared rays having a wavelength of less than 8 μm is laminated on the rear surface of the second lens 32.

なお、上記特許文献１に開示された赤外線センサでは、第２のレンズ３２の赤外線透過材料としてＳｉを採用することで、ＺｎＳｅやＧａＡｓなどを採用する場合に比べて、環境負荷を少なくすることができるとともに低コスト化が可能となり、Ｇｅを採用する場合に比べて低コスト化が可能となる。   In the infrared sensor disclosed in Patent Document 1, the environmental load can be reduced by adopting Si as the infrared transmitting material of the second lens 32 as compared with the case where ZnSe or GaAs is adopted. In addition, the cost can be reduced and the cost can be reduced as compared with the case where Ge is employed.

特開２００６−４７３４３号公報JP 2006-47343 A

ところで、上記特許文献１には、図８に示した構成の赤外線センサの高感度化を図る一手段として、パッケージ２’と第２のレンズ３２とで囲まれる空間を真空雰囲気とすることが記載されている。ここにおいて、図８に示した構成の赤外線センサでは、気密性および所望の真空度を確保するために、第２のレンズ３２をパッケージ２’に対して低融点ガラスにより固着する必要があるが、第２のレンズ３２をパッケージ２’に対して固着する際に、４００〜６００℃程度の高温になり、第２のレンズ３２に形成されている赤外線反射防止膜および赤外線光学フィルタ膜の剥れが発生してしまうことがあった。また、図８に示した構成の赤外線センサでは、低融点ガラスが鉛を含んでいるものと考えられ、環境負荷の点から好ましくなかった。   By the way, the above Patent Document 1 describes that a space surrounded by the package 2 ′ and the second lens 32 is a vacuum atmosphere as one means for increasing the sensitivity of the infrared sensor having the configuration shown in FIG. 8. Has been. Here, in the infrared sensor having the configuration shown in FIG. 8, the second lens 32 needs to be fixed to the package 2 ′ with a low melting point glass in order to ensure airtightness and a desired degree of vacuum. When the second lens 32 is fixed to the package 2 ′, the temperature is increased to about 400 to 600 ° C., and the infrared antireflection film and the infrared optical filter film formed on the second lens 32 are peeled off. It sometimes occurred. Moreover, in the infrared sensor of the structure shown in FIG. 8, it is thought that low melting glass contains lead, and it was not preferable from the point of environmental load.

本発明は上記事由に鑑みて為されたものであり、その目的は、環境負荷が少なく、且つ、赤外線反射防止膜や赤外線光学フィルタ膜の剥れを抑制できるとともに高感度化および低コスト化が可能な赤外線センサを提供することにある。   The present invention has been made in view of the above-mentioned reasons, and its purpose is to reduce environmental impact and to suppress the peeling of the infrared antireflection film and the infrared optical filter film and to increase the sensitivity and the cost. It is to provide a possible infrared sensor.

請求項１の発明は、熱型の赤外線受光素子と、無機材料により形成され赤外線検出素子を収納するパッケージであり赤外線検出素子の前方に開口部が形成されたパッケージと、第１の赤外線透過材料により形成されパッケージの内側から開口部を閉塞する形でパッケージに固着された第１の赤外線透過部材と、第２の赤外線透過材料により形成されパッケージの外側から開口部を閉塞する形でパッケージに固着された第２の赤外線透過部材とを備え、パッケージと第１の赤外線透過部材とで囲まれた空間を真空雰囲気としてある赤外線センサであって、パッケージが、赤外線検出素子が実装される実装部材と、前記開口部を有し実装部材との間に赤外線検出素子を囲む形で実装部材に接合されるカバー部材とで構成されてなり、第１の赤外線透過材料がＺｎＳであり、第１の赤外線透過部材が、鉛フリーのガラスフリットによりカバー部材に固着されてなり、第２の赤外線透過材料がＳｉであり、第２の赤外線透過部材に、赤外線光学フィルタ膜と赤外線反射防止膜との少なくとも一方が積層されてなり、当該第２の赤外線透過部材が、鉛フリーの導電性接着剤もしくは樹脂系接着剤によりカバー部材に固着されてなることを特徴とする。   The invention of claim 1 is a heat-type infrared light receiving element, a package made of an inorganic material and containing an infrared detection element, having an opening formed in front of the infrared detection element, and a first infrared transmission material The first infrared transmitting member formed by the first infrared transmitting member fixed to the package so as to close the opening from the inside of the package and the second infrared transmitting material formed to close the opening from the outside of the package. An infrared sensor having a vacuum atmosphere in a space surrounded by the package and the first infrared transmitting member, wherein the package includes a mounting member on which the infrared detection element is mounted; And a cover member joined to the mounting member so as to surround the infrared detecting element between the opening member and the mounting member. The overmaterial is ZnS, the first infrared transmission member is fixed to the cover member with a lead-free glass frit, the second infrared transmission material is Si, and the second infrared transmission member is an infrared optical device. It is characterized in that at least one of a filter film and an infrared antireflection film is laminated, and the second infrared transmission member is fixed to the cover member with a lead-free conductive adhesive or a resin adhesive. To do.

この発明によれば、ＺｎＳにより形成された第１の赤外線透過部材が、パッケージに対して、パッケージの内側から開口部を閉塞する形で鉛フリーのガラスフリットにより固着され、パッケージと第１の赤外線透過部材とで囲まれた空間が、真空雰囲気となっており、Ｓｉにより形成され赤外線光学フィルタ膜と赤外線反射防止膜との少なくとも一方が積層された第２の赤外線透過部材が、ガラスフリットに比べて低温での使用が可能な鉛フリーの導電性接着剤もしくは樹脂系接着剤により、パッケージに対して固着されているので、環境負荷が少なく、且つ、赤外線反射防止膜や赤外線光学フィルタ膜の剥れを抑制できるとともに高感度化および低コスト化が可能になる。   According to the present invention, the first infrared transmitting member formed of ZnS is fixed to the package with the lead-free glass frit so as to close the opening from the inside of the package, and the package and the first infrared transmitting member are fixed. The space surrounded by the transmissive member is a vacuum atmosphere, and the second infrared transmissive member formed of Si and laminated with at least one of the infrared optical filter film and the infrared antireflection film is compared with the glass frit. Since it is fixed to the package with a lead-free conductive adhesive or resin adhesive that can be used at low temperatures, it has a low environmental impact, and the infrared antireflection film and infrared optical filter film can be peeled off. This can be suppressed, and high sensitivity and low cost can be achieved.

請求項２の発明は、請求項１の発明において、前記第１の赤外線透過部材と前記第２の赤外線透過部材との少なくとも一方が、前記赤外線検出素子へ赤外線を集光するレンズ形状に形成されてなることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, at least one of the first infrared transmitting member and the second infrared transmitting member is formed in a lens shape for condensing infrared rays on the infrared detecting element. It is characterized by.

この発明によれば、前記第１の赤外線透過部材と前記第２の赤外線透過部材との少なくとも一方が、前記赤外線検出素子へ赤外線を集光するレンズ形状に形成されていることにより、前記第１の赤外線透過部材と前記第２の赤外線透過部材との両方が平板状に形成されている場合に比べて、高感度化を図れる。   According to the present invention, at least one of the first infrared transmitting member and the second infrared transmitting member is formed in a lens shape that collects infrared rays on the infrared detection element, whereby the first As compared with the case where both the infrared transmissive member and the second infrared transmissive member are formed in a flat plate shape, higher sensitivity can be achieved.

請求項３の発明は、請求項１の発明において、前記第２の赤外線透過部材は、シリコン基板を用いて前記赤外線検出素子へ赤外線を集光するレンズ形状に形成されたものであり、前記レンズ形状に応じてシリコン基板との接触パターンを設計した陽極をシリコン基板の一表面側にシリコン基板との接触がオーミック接触となるように形成した後にシリコン基板の構成元素の酸化物をエッチング除去する溶液からなる電解液中でシリコン基板の他表面側を陽極酸化することで除去部位となる多孔質部を形成してから当該多孔質部を除去することにより形成されてなることを特徴とする。   According to a third aspect of the present invention, in the first aspect of the invention, the second infrared transmitting member is formed in a lens shape that collects infrared rays to the infrared detecting element using a silicon substrate, and the lens A solution that etches and removes oxides of constituent elements of a silicon substrate after an anode having a contact pattern with a silicon substrate designed according to the shape is formed on one surface side of the silicon substrate so that the contact with the silicon substrate is ohmic contact It is characterized by being formed by removing the porous portion after forming a porous portion to be a removal site by anodizing the other surface side of the silicon substrate in the electrolyte solution.

この発明によれば、前記第２の赤外線透過部材を、前記赤外線検出素子へ赤外線を集光するレンズ形状に形成することで高感度化を図れ、当該レンズ形状の前記第２の赤外線透過部材が、前記レンズ形状に応じてシリコン基板との接触パターンを設計した陽極をシリコン基板の一表面側にシリコン基板との接触がオーミック接触となるように形成した後にシリコン基板の構成元素の酸化物をエッチング除去する溶液からなる電解液中でシリコン基板の他表面側を陽極酸化することで除去部位となる多孔質部を形成してから当該多孔質部を除去することにより形成されているので、精密研磨装置を用いて形成されている場合に比べて、前記第２の赤外線透過部材の低コスト化を図れる。   According to this invention, high sensitivity can be achieved by forming the second infrared transmitting member in a lens shape for condensing infrared rays on the infrared detecting element, and the second infrared transmitting member having the lens shape is provided. Etching the oxide of the constituent elements of the silicon substrate after forming an anode with a contact pattern designed with the silicon substrate according to the lens shape so that the contact with the silicon substrate is ohmic contact on one surface side of the silicon substrate Precise polishing because it is formed by removing the porous part after forming the porous part as the removal site by anodizing the other surface side of the silicon substrate in the electrolytic solution consisting of the solution to be removed The cost of the second infrared transmitting member can be reduced as compared with the case where it is formed using an apparatus.

請求項１の発明は、環境負荷が少なく、且つ、赤外線反射防止膜や赤外線光学フィルタ膜の剥れを抑制できるとともに高感度化および低コスト化が可能になるという効果がある。   The invention of claim 1 has an effect that the environmental load is small, peeling of the infrared antireflection film and the infrared optical filter film can be suppressed, and high sensitivity and cost can be reduced.

実施形態１の赤外線センサの概略断面図である。It is a schematic sectional drawing of the infrared sensor of Embodiment 1. 同上の赤外線センサの製造方法の説明図である。It is explanatory drawing of the manufacturing method of an infrared sensor same as the above. 実施形態２の赤外線センサの概略断面図である。It is a schematic sectional drawing of the infrared sensor of Embodiment 2. 同上の赤外線センサにおける第２の赤外線透過部材の製造方法を説明するための主要工程断面図である。It is principal process sectional drawing for demonstrating the manufacturing method of the 2nd infrared rays transmissive member in an infrared sensor same as the above. 同上の赤外線センサにおける第２の赤外線透過部材の製造方法の説明図である。It is explanatory drawing of the manufacturing method of the 2nd infrared transmission member in an infrared sensor same as the above. 実施形態３の赤外線センサの概略断面図である。It is a schematic sectional drawing of the infrared sensor of Embodiment 3. 実施形態４の赤外線センサの概略断面図である。It is a schematic sectional drawing of the infrared sensor of Embodiment 4. 従来例の赤外線センサの概略断面図である。It is a schematic sectional drawing of the infrared sensor of a prior art example.

（実施形態１）
本実施形態の赤外線センサは、熱型の赤外線受光素子１と、無機材料により形成され赤外線検出素子１を収納するパッケージ２であり赤外線検出素子１の受光面の前方に開口部２ａが形成されたパッケージ２と、第１の赤外線透過材料により形成されパッケージ２の内側から開口部２ａを閉塞する形でパッケージ２に固着された第１の赤外線透過部材４１と、第２の赤外線透過材料により形成されパッケージ２の外側から開口部２ａを閉塞する形でパッケージ２に固着された第２の赤外線透過部材４２とを備え、パッケージ２と第１の赤外線透過部材４１とで囲まれた空間を真空雰囲気としてある。 (Embodiment 1)
The infrared sensor of the present embodiment is a thermal infrared receiver 1 and a package 2 made of an inorganic material and containing the infrared detector 1, and an opening 2 a is formed in front of the light receiving surface of the infrared detector 1. The package 2, the first infrared transmitting member 41 formed of the first infrared transmitting material and fixed to the package 2 so as to close the opening 2 a from the inside of the package 2, and the second infrared transmitting material. A second infrared transmitting member 42 fixed to the package 2 so as to close the opening 2a from the outside of the package 2, and a space surrounded by the package 2 and the first infrared transmitting member 41 is a vacuum atmosphere. is there.

また、本実施形態の赤外線センサでは、上述のパッケージ２に、赤外線検出素子１だけでなく、当該赤外線検出素子１の出力信号である出力電圧を信号処理する信号処理ＩＣチップ５を収納してある。ここにおいて、赤外線検出素子１と信号処理ＩＣチップ５とは横並びに並設されており、赤外線検出素子１と信号処理ＩＣチップ５との互いに対応するパッド（図示せず）同士がボンディングワイヤ（図示せず）を介して各別に電気的に接続されている。   In the infrared sensor of the present embodiment, not only the infrared detection element 1 but also a signal processing IC chip 5 that performs signal processing on an output voltage that is an output signal of the infrared detection element 1 is housed in the package 2 described above. . Here, the infrared detection element 1 and the signal processing IC chip 5 are arranged side by side, and pads (not shown) corresponding to each other of the infrared detection element 1 and the signal processing IC chip 5 are bonded wires (see FIG. (Not shown) are electrically connected to each other.

上述のパッケージ２は、一面が開口した矩形箱状に形成され内底面側に赤外線検出素子１および信号処理ＩＣチップ５が実装された多層セラミック基板（セラミックパッケージ）からなるパッケージ本体２１と、上述の開口部２ａを有しパッケージ本体２１の上記一面側に覆着されたメタルリッドよりなるパッケージ蓋２２とで構成されており、パッケージ蓋２２に上述の各赤外線透過部材４１，４２が固着されている。ここで、パッケージ蓋２２の周部は、パッケージ本体２１の上記一面上に形成された矩形枠状の金属パターン（図示せず）にシーム溶接により接合されている。なお、本実施形態では、パッケージ本体２１が、赤外線検出素子１が実装される実装部材を構成し、パッケージ蓋２２が、開口部２ａを有し実装部材との間に赤外線検出素子１を囲む形で実装部材に接合されるカバー部材を構成している。   The above-described package 2 is formed in a rectangular box shape having an opening on one side, and a package body 21 made of a multilayer ceramic substrate (ceramic package) on which the infrared detection element 1 and the signal processing IC chip 5 are mounted on the inner bottom surface side, and the above-described package 2. The package lid 22 is made of a metal lid that has an opening 2 a and is covered on the one surface side of the package body 21, and the infrared transmission members 41 and 42 are fixed to the package lid 22. . Here, the peripheral part of the package lid 22 is joined to a rectangular frame-shaped metal pattern (not shown) formed on the one surface of the package body 21 by seam welding. In the present embodiment, the package body 21 constitutes a mounting member on which the infrared detection element 1 is mounted, and the package lid 22 has an opening 2a and surrounds the infrared detection element 1 between the mounting member. The cover member joined to the mounting member is configured.

また、赤外線検出素子１としては、サーモパイル型のセンシングエレメントを赤外線検出部として備えた赤外線検出素子を用いているが、これに限らず、ボロメータ型のセンシングエレメントを赤外線検出部として備えた赤外線検出素子や、焦電型のセンシングエレメントを赤外線検出部として備えた赤外線検出素子を用いてもよい。また、赤外線検出素子１としては、赤外線検出部を１つだけ備えたものを用いてもよいし、複数の赤外線検出部を備え当該複数の赤外線検出部が２次元アレイ状に配列されたものを用いてもよい。   Further, as the infrared detection element 1, an infrared detection element including a thermopile type sensing element as an infrared detection unit is used. However, the infrared detection element is not limited thereto, and an infrared detection element including a bolometer type sensing element as an infrared detection unit. Alternatively, an infrared detection element including a pyroelectric sensing element as an infrared detection unit may be used. In addition, as the infrared detection element 1, an element having only one infrared detection unit may be used, or an element having a plurality of infrared detection units arranged in a two-dimensional array. It may be used.

赤外線検出素子１および信号処理ＩＣチップ５とパッケージ本体２１との接合方法は、鉛フリー半田や銀ペーストなどの導電性接着剤を用いた接合法に限らず、例えば、常温接合法や、例えば、Ａｕ−Ｓｎ共晶もしくはＡｕ−Ｓｉ共晶を利用した接合法などを採用してもよい。ただし、常温接合法などの直接接合が可能な接合法の方が、導電性接着剤を用いた接合法に比べて、赤外線検出素子１と第１の赤外線透過部材４１との距離精度を向上させる上では有利である。   The bonding method of the infrared detection element 1 and the signal processing IC chip 5 and the package body 21 is not limited to a bonding method using a conductive adhesive such as lead-free solder or silver paste. A bonding method using Au—Sn eutectic or Au—Si eutectic may be employed. However, the bonding method capable of direct bonding such as the room temperature bonding method improves the distance accuracy between the infrared detecting element 1 and the first infrared transmitting member 41 as compared with the bonding method using the conductive adhesive. Above is advantageous.

ここにおいて、パッケージ本体２１は、上記内底面側に、赤外線検出素子１および信号処理ＩＣチップ５が電気的に接続される金属材料（例えば、Ｃｕなど）からなる導体パターン（図示せず）が形成されており、当該各導体パターンそれぞれに電気的に接続された金属材料（例えば、Ｃｕなど）からなる複数の外部接続用電極（図示せず）が、外底面と外側面とに跨って形成されている。なお、本実施形態では、パッケージ本体２１に赤外線検出素子１と信号処理ＩＣチップ５とが収納されているので、赤外線検出素子１が、上記ボンディングワイヤや信号処理ＩＣチップ５などを介して上記導体パターンと電気的に接続されているが、パッケージ本体２１に信号処理ＩＣチップ５を収納しない場合には、赤外線検出素子１がボンディングワイヤを介して適宜の導体パターンと電気的に接続されるようにすればよい。   Here, the package body 21 has a conductor pattern (not shown) made of a metal material (for example, Cu) electrically connected to the infrared detection element 1 and the signal processing IC chip 5 on the inner bottom surface side. A plurality of external connection electrodes (not shown) made of a metal material (for example, Cu) electrically connected to each of the conductor patterns are formed across the outer bottom surface and the outer surface. ing. In this embodiment, since the infrared detection element 1 and the signal processing IC chip 5 are accommodated in the package body 21, the infrared detection element 1 is connected to the conductor via the bonding wire, the signal processing IC chip 5, or the like. When the signal processing IC chip 5 is not housed in the package body 21, the infrared detection element 1 is electrically connected to an appropriate conductor pattern via a bonding wire. do it.

また、パッケージ本体２１は、金属材料（例えば、Ｃｕなど）からなるシールド用導体パターン２３が形成されており、赤外線検出素子１および信号処理ＩＣチップ５は、パッケージ本体２１のシールド用導体パターン２３に適宜接続されている。ここにおいて、本実施形態の赤外線センサは、パッケージ本体２１に、シールド用導体パターン２３に電気的に接続された金属材料（例えば、Ｃｕなど）からなるグランド用の外部接続用電極（図示せず）もパッケージ本体２１の外底面と外側面とに跨って設けられており、当該グランド用の外部接続用電極を、赤外線センサを２次実装する回路基板などのグランドパターンと電気的に接続することで、赤外線検出素子１および信号処理ＩＣチップ５への外来の電磁ノイズの影響を低減でき、外来の電磁ノイズに起因したＳ／Ｎ比の低下を防止することができる。なお、上述の説明から分かるように、パッケージ本体２１は、無機材料（セラミックおよび上記各金属材料）により形成されている。   The package body 21 is formed with a shield conductor pattern 23 made of a metal material (for example, Cu). The infrared detection element 1 and the signal processing IC chip 5 are formed on the shield conductor pattern 23 of the package body 21. Connected appropriately. Here, the infrared sensor of the present embodiment has a ground external connection electrode (not shown) made of a metal material (for example, Cu or the like) electrically connected to the shield conductor pattern 23 on the package body 21. Is provided across the outer bottom surface and the outer surface of the package body 21, and the external connection electrode for the ground is electrically connected to a ground pattern such as a circuit board on which the infrared sensor is secondarily mounted. Further, it is possible to reduce the influence of external electromagnetic noise on the infrared detection element 1 and the signal processing IC chip 5 and to prevent the S / N ratio from being lowered due to the external electromagnetic noise. As can be seen from the above description, the package body 21 is formed of an inorganic material (ceramic and each of the above metal materials).

また、パッケージ蓋２２は、コバールなどの金属材料により形成されており、真空封止するためにＮｉめっきが施されている。なお、パッケージ蓋２２の金属材料は、コバールに限定するものではない。   The package lid 22 is made of a metal material such as Kovar, and Ni plating is applied for vacuum sealing. Note that the metal material of the package lid 22 is not limited to Kovar.

また、第１の赤外線透過部材４１は、赤外線検出素子１へ赤外線を集光する集光用の赤外線レンズであり、平凸型の非球面レンズのレンズ形状に形成されており、凸曲面が赤外線検出素子１側となる形でパッケージ蓋２２に固着されている。ここにおいて、第１の赤外線透過部材４１は、パッケージ２内を真空雰囲気とするための窓材を兼ねており、パッケージ蓋２２に対して、鉛フリーのガラスフリットからなる接合部５１により固着（封着）してある。さらに説明すれば、第１の赤外線透過部材４１は、当該第１の赤外線透過部材４１の周部をパッケージ蓋２２の一表面（図１では下面）における開口部２ａの周部に対して、接合部５１により固着してある。ここにおいて、鉛フリーのガラスフリットとしては、例えば、４００℃〜６００℃程度で溶けるものを用いればよい。   The first infrared transmitting member 41 is a condensing infrared lens that condenses infrared rays onto the infrared detecting element 1 and is formed in a lens shape of a plano-convex aspheric lens. It is fixed to the package lid 22 so as to be on the detection element 1 side. Here, the first infrared transmitting member 41 also serves as a window material for making the inside of the package 2 a vacuum atmosphere, and is fixed (sealed) to the package lid 22 by a joint portion 51 made of lead-free glass frit. Wearing). More specifically, the first infrared transmitting member 41 joins the peripheral portion of the first infrared transmitting member 41 to the peripheral portion of the opening 2 a on one surface (the lower surface in FIG. 1) of the package lid 22. It is fixed by the part 51. Here, as the lead-free glass frit, for example, a material that melts at about 400 ° C. to 600 ° C. may be used.

また、第２の赤外線透過部材４２は、パッケージ蓋２２の開口部２ａを閉塞するようにパッケージ蓋２２の他表面（図１では上面）における開口部２ａの周部に鉛フリーの導電性接着剤（例えば、鉛フリー半田、銀ペーストなど）からなる接合部５２により固着されている。ここにおいて、接合部５２の材料は鉛フリーの導電性接着剤に限らず、例えば、エポキシ系樹脂やアクリル系樹脂などの樹脂系接着剤でもよいが、いずれにしても上述のガラスフリットよりも低温での接合が可能なものを用いる。ただし、上述のように、接合部５２の材料として導電性接着剤を採用することにより、第２の赤外線透過部材４２が、接合部５２およびパッケージ蓋２２を介してパッケージ本体２１のシールド用導体パターン２３に電気的に接続されるので、電磁ノイズに対するシールド性を高めることができ、外来の電磁ノイズに起因したＳ／Ｎ比の低下を防止することができる。   The second infrared transmitting member 42 is a lead-free conductive adhesive on the periphery of the opening 2a on the other surface (upper surface in FIG. 1) of the package lid 22 so as to close the opening 2a of the package lid 22. It is fixed by a joint portion 52 made of (for example, lead-free solder, silver paste, etc.). Here, the material of the joint portion 52 is not limited to a lead-free conductive adhesive, and may be, for example, a resin adhesive such as an epoxy resin or an acrylic resin, but in any case, the temperature is lower than that of the glass frit described above. Use one that can be joined with However, as described above, by using a conductive adhesive as the material of the joint portion 52, the second infrared transmitting member 42 is connected to the shield conductor pattern of the package body 21 via the joint portion 52 and the package lid 22. Therefore, the shield against electromagnetic noise can be improved, and the S / N ratio can be prevented from decreasing due to external electromagnetic noise.

ところで、本実施形態の赤外線センサは、検出対象の赤外線として人体から放射される１０μｍ付近の波長帯（８μｍ〜１３μｍ）の赤外線を想定しており、上述の各赤外線透過材料としては、下記表１のような物性定数を有するＺｎＳ、ＺｎＳｅ、Ｓｉ、Ｇｅ、ＧａＡｓなどが考えられるが、本実施形態では、第１の赤外線透過部材４１の第１の赤外線透過材料として、波長１０μｍでの透過率が最も高いＺｎＳを採用し、第２の赤外線透過部材４２の第２の赤外線透過材料として、環境負荷が少なく且つ当該第２の赤外線透過部材４２の低コスト化が可能であり、しかも、ＺｎＳに比べて波長分散が小さなＳｉを採用している。   By the way, the infrared sensor of this embodiment assumes the infrared rays of the wavelength range (8 micrometers-13 micrometers) of 10 micrometer vicinity radiated | emitted from a human body as infrared rays of a detection target, As the above-mentioned each infrared transmissive material, following Table 1 ZnS, ZnSe, Si, Ge, GaAs, and the like having physical property constants as described above are conceivable. In the present embodiment, the first infrared transmitting material of the first infrared transmitting member 41 has a transmittance at a wavelength of 10 μm. Employing the highest ZnS, as the second infrared transmitting material of the second infrared transmitting member 42, the environmental load is small, the cost of the second infrared transmitting member 42 can be reduced, and compared with ZnS. Si having a small wavelength dispersion is employed.

Figure 2011027643
Figure 2011027643

上述の表１から分かるように、ＺｎＳは、波長１０μｍの赤外線に対する透過率が８０％近い値であり、Ｓｉ、Ｇｅ、ＧａＡｓなどに比べて高いので、第１の赤外線透過部材４１の赤外線透過材料としてＺｎＳを採用することにより、第１の赤外線透過部材４１に赤外線反射防止膜を設けなくてもよいという利点がある。その一方で、ＺｎＳｅはＺｎＳに近い透過率を有する赤外線透過材料であるが、Ｓｅを含んでいるので、環境負荷の点から好ましくない。   As can be seen from Table 1 above, ZnS has a transmittance of about 80% for infrared rays having a wavelength of 10 μm, and is higher than Si, Ge, GaAs, etc., so that the infrared ray transmitting material of the first infrared ray transmitting member 41 is high. By adopting ZnS, there is an advantage that it is not necessary to provide an infrared antireflection film on the first infrared transmitting member 41. On the other hand, ZnSe is an infrared transmitting material having a transmittance close to that of ZnS. However, since it contains Se, it is not preferable from the viewpoint of environmental load.

また、Ｓｉは、低コストの赤外線透過材料であるが、波長１０μｍの赤外線に対する透過率が４３％程度なので、本実施形態の赤外線センサのように、第２の赤外線透過部材４２の赤外線透過材料としてＳｉを採用する場合、第２の赤外線透過部材４２の赤外線入射面側に赤外線反射防止膜４４を積層するとともに、第２の赤外線透過部材４２の赤外線出射面側に赤外線光学フィルタ膜４３を積層することが好ましい。赤外線光学フィルタ膜４３としては、８μｍ未満の赤外線を遮断するように光学設計してあるが、赤外線センサの用途（例えば、人体検知の用途、ガス検知の用途など）に応じた検出対象の赤外線の波長や波長域に応じて適宜の光学設計を行えばよい。ここで、赤外線反射防止膜４４および赤外線光学フィルタ膜４３は、例えば、屈折率の異なる複数種類の薄膜を交互に積層することにより形成すればよい。なお、本実施形態では、第２の赤外線透過部材４２に赤外線反射防止膜４４および赤外線光学フィルタ膜４３を積層してあるが、赤外線反射防止膜４４と赤外線光学フィルタ膜４３との少なくも一方を積層してあればよい。また、上述の第２の赤外線透過部材４２は、シリコンウェハを用いて形成すればよく、多数の第２の赤外線透過部材４２の基礎となるシリコンウェハの一表面側に赤外線光学フィルタ膜４３を形成するとともに他表面側に赤外線反射防止膜４４を形成した後、個々の第２の赤外線透過部材４２にダイシングすればよい。   Si is a low-cost infrared transmissive material, but has a transmittance of about 43% for infrared rays having a wavelength of 10 μm. Therefore, like the infrared sensor of this embodiment, Si is an infrared transmissive material for the second infrared transmissive member 42. When Si is employed, the infrared reflection preventing film 44 is laminated on the infrared incident surface side of the second infrared transmitting member 42 and the infrared optical filter film 43 is laminated on the infrared emitting surface side of the second infrared transmitting member 42. It is preferable. The infrared optical filter film 43 is optically designed so as to block infrared rays of less than 8 μm. However, the infrared optical filter film 43 is not suitable for the detection target infrared ray depending on the use of the infrared sensor (for example, human body detection, gas detection). Appropriate optical design may be performed according to the wavelength or wavelength range. Here, the infrared reflection preventing film 44 and the infrared optical filter film 43 may be formed by alternately laminating a plurality of types of thin films having different refractive indexes, for example. In the present embodiment, the infrared reflection preventing film 44 and the infrared optical filter film 43 are laminated on the second infrared transmitting member 42. However, at least one of the infrared reflection preventing film 44 and the infrared optical filter film 43 is used. What is necessary is just to laminate. The second infrared transmitting member 42 described above may be formed using a silicon wafer, and the infrared optical filter film 43 is formed on the one surface side of the silicon wafer that is the basis of the many second infrared transmitting members 42. In addition, after forming the infrared antireflection film 44 on the other surface side, it may be diced into the individual second infrared transmitting members 42.

以下、本実施形態の赤外線センサの製造方法について図２を参照しながら説明するが、図２では、図１の赤外線センサにおけるシールド用導体パターン２３の図示を省略してある。   Hereinafter, the manufacturing method of the infrared sensor of the present embodiment will be described with reference to FIG. 2, but in FIG. 2, the shielding conductor pattern 23 in the infrared sensor of FIG. 1 is omitted.

まず、各別に形成された赤外線検出素子１および信号処理ＩＣチップ５をパッケージ本体２１の内底面側に実装する実装工程を行った後、第１の赤外線透過部材４１が上述の鉛フリーのガラスフリットからなる接合部５１により上記一表面側に固着されたパッケージ蓋２２を真空中においてパッケージ本体２１の上記一面側に重ねて、シーム溶接によりパッケージ蓋２２の周部をパッケージ本体２１に封着する。その後、パッケージ蓋２２の上記他表面側に、第２の赤外線透過部材４２を上述の鉛フリーの導電性接着剤（例えば、溶融温度が４００℃未満の鉛フリー半田、銀ペーストなど）からなる接合部５２により固着することによって、図１に示す構成の赤外線センサを得る。   First, after performing the mounting process of mounting the infrared detecting element 1 and the signal processing IC chip 5 formed separately on the inner bottom surface side of the package body 21, the first infrared transmitting member 41 is the above lead-free glass frit. The package lid 22 fixed to the one surface side by the joint portion 51 is overlapped on the one surface side of the package body 21 in a vacuum, and the peripheral portion of the package lid 22 is sealed to the package body 21 by seam welding. Thereafter, the second infrared transmitting member 42 is joined to the other surface side of the package lid 22 by the lead-free conductive adhesive (for example, lead-free solder having a melting temperature of less than 400 ° C., silver paste, etc.). By fixing by the portion 52, an infrared sensor having the configuration shown in FIG. 1 is obtained.

以上説明した本実施形態の赤外線センサによれば、ＺｎＳにより形成された第１の赤外線透過部材４１が、パッケージ２に対して、パッケージ２の内側から開口部２ａを閉塞する形で鉛フリーのガラスフリットにより固着され、パッケージ２と第１の赤外線透過部材４１とで囲まれた空間が、真空雰囲気となっており、Ｓｉにより形成され赤外線光学フィルタ膜４３と赤外線反射防止膜４４との少なくとも一方が積層された第２の赤外線透過部材４２が、ガラスフリットに比べて低温での使用が可能な鉛フリーの導電性接着剤もしくは樹脂系接着剤により、パッケージ２に対して固着されているので、環境負荷が少なく、且つ、赤外線反射防止膜４４や赤外線光学フィルタ膜４３の剥れを抑制できるとともに高感度化および低コスト化が可能になる。   According to the infrared sensor of the present embodiment described above, the lead-free glass in which the first infrared transmitting member 41 formed of ZnS closes the opening 2a from the inside of the package 2 with respect to the package 2. The space fixed by the frit and surrounded by the package 2 and the first infrared transmitting member 41 is a vacuum atmosphere, and at least one of the infrared optical filter film 43 and the infrared antireflection film 44 is formed of Si. Since the laminated second infrared transmitting member 42 is fixed to the package 2 with a lead-free conductive adhesive or resin adhesive that can be used at a lower temperature than the glass frit, The load is small, and it is possible to suppress the peeling of the infrared antireflection film 44 and the infrared optical filter film 43 and to increase the sensitivity and cost. It made.

また、本実施形態の赤外線センサでは、第１の赤外線透過部材４１が、赤外線検出素子１の受光面へ赤外線を集光するレンズ形状に形成されているので、第１の赤外線透過部材４１と第２の赤外線透過部材４２との両方が平板状に形成されている場合に比べて、高感度化を図れる。   Moreover, in the infrared sensor of this embodiment, since the 1st infrared transmission member 41 is formed in the lens shape which condenses infrared rays to the light-receiving surface of the infrared detection element 1, the 1st infrared transmission member 41 and the 1st As compared with the case where both the two infrared transmission members 42 are formed in a flat plate shape, higher sensitivity can be achieved.

（実施形態２）
本実施形態の赤外線センサの基本構成は実施形態１と略同じであって、図３に示すように、ＺｎＳにより形成された第１の赤外線透過部材４１の形状が平板状であり、Ｓｉにより形成された第２の赤外線透過部材４２の形状が平凸型の非球面レンズのレンズ形状である点が相違する。ここで、第２の赤外線透過部材４２は、平面がパッケージ蓋２２側となり、凸曲面がパッケージ蓋２２側とは反対側となる形でパッケージ蓋２２に固着されている。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 2)
The basic configuration of the infrared sensor of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 3, the first infrared transmitting member 41 made of ZnS has a flat plate shape and is made of Si. The difference is that the shape of the second infrared transmitting member 42 is a lens shape of a plano-convex aspherical lens. Here, the second infrared transmitting member 42 is fixed to the package lid 22 such that the plane is the package lid 22 side and the convex curved surface is the opposite side of the package lid 22 side. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

上述のレンズ形状の第２の赤外線透過部材４２は、陽極酸化技術を応用した半導体レンズの製造方法（例えば、特許第３８９７０５５号公報、特許第３８９７０５６号公報など）などを利用して形成している。   The above-described lens-shaped second infrared transmitting member 42 is formed using a semiconductor lens manufacturing method (for example, Japanese Patent No. 3897055, Japanese Patent No. 3897056, etc.) using an anodizing technique. .

以下、第２の赤外線透過部材４２の製造方法について図４および図５を参照しながら説明するが、具体的には、導電形がｐ形のシリコンウェハからなる半導体ウェハ４０の一部を陽極酸化工程において多孔質化することにより形成した多孔質シリコンからなる多孔質部４８（図４（ｄ）参照）を除去してシリコンレンズからなる半導体レンズを第２の赤外線透過部材４２として製造する製造方法を説明する。なお、本実施形態では、半導体ウェハ４０の抵抗率を８０Ωｃｍに設定してあるが、この数値は特に限定するものではない。ただし、半導体ウェハ４０の抵抗率は、好ましくは０．１〜１０００Ωｃｍ、より好ましくは数Ωｃｍ〜数１００Ωｃｍである。   Hereinafter, a method for manufacturing the second infrared transmitting member 42 will be described with reference to FIGS. 4 and 5. Specifically, a part of the semiconductor wafer 40 made of a silicon wafer having a p-type conductivity is anodized. A manufacturing method for manufacturing a semiconductor lens made of a silicon lens as the second infrared transmitting member 42 by removing the porous portion 48 made of porous silicon (see FIG. 4D) formed by making it porous in the process. Will be explained. In this embodiment, the resistivity of the semiconductor wafer 40 is set to 80 Ωcm, but this value is not particularly limited. However, the resistivity of the semiconductor wafer 40 is preferably 0.1 to 1000 Ωcm, more preferably several Ωcm to several hundred Ωcm.

まず、図４（ａ）に示すシリコンウェハからなる半導体ウェハ４０を洗浄する洗浄工程、半導体ウェハ４０の一表面（図４（ａ）における下面）にマークを設けるマーキング工程を行ってから、半導体ウェハ４０の上記一表面側に陽極酸化工程で利用する陽極４６（図４（ｃ）参照）の基礎となる所定膜厚（例えば、１μｍ）の導電性膜（例えば、Ａｌ膜、Ａｌ−Ｓｉ膜など）からなる導電性層４５を形成する導電性層形成工程を行うことによって、図４（ｂ）に示す構造を得る。ここにおいて、導電性層形成工程では、例えばスパッタ法によって半導体ウェハ４０の上記一表面上に導電性層４５を成膜した後、Ｎ２ガスおよびＨ２ガス雰囲気中で導電性層４５のシンタ（熱処理）を行うことで、導電性層４５と半導体ウェハ４０とのオーミック接触を得ている。なお、導電性層４５の成膜方法はスパッタ法に限らず、例えば蒸着法などの他の周知の薄膜形成方法を採用してもよい。 First, a cleaning process for cleaning the semiconductor wafer 40 made of a silicon wafer shown in FIG. 4A, a marking process for providing a mark on one surface of the semiconductor wafer 40 (the lower surface in FIG. 4A), and then the semiconductor wafer. A conductive film (for example, an Al film, an Al—Si film, etc.) having a predetermined film thickness (for example, 1 μm) serving as a basis of the anode 46 (see FIG. 4C) used in the anodizing step on the one surface side of 40 The structure shown in FIG. 4B is obtained by performing a conductive layer forming step for forming a conductive layer 45 made of Here, in the conductive layer forming step, after the conductive layer 45 is formed on the one surface of the semiconductor wafer 40 by, for example, sputtering, the conductive layer 45 is sintered in an N 2 gas and H 2 gas atmosphere ( By performing heat treatment, ohmic contact between the conductive layer 45 and the semiconductor wafer 40 is obtained. The method for forming the conductive layer 45 is not limited to the sputtering method, and other known thin film forming methods such as a vapor deposition method may be employed.

導電性層形成工程の後、導電性層４５に円形状の開孔部４７を設けるように導電性層４５をパターニングするパターニング工程を行うことによって、図４（ｃ）に示す構造を得る。ここにおいて、パターニング工程では、フォトリソグラフィ技術を利用して半導体ウェハ４０の上記一表面側に開孔部４７に対応する部位が開孔されたレジスト層（図示せず）を形成した後、レジスト層をマスクとして導電性層４５の不要部分を例えばウェットエッチング技術あるいはドライエッチング技術によってエッチング除去して開孔部４７を設けることにより導電性層４５の残りの部分からなる陽極４６を形成し、その後、上記レジスト層を除去する。なお、導電性層４５がＡｌ膜やＡｌ−Ｓｉ膜であれば、導電性層４５の不要部分をウェットエッチング技術によりエッチング除去する場合には、例えば燐酸系エッチャントを用いればよく、導電性層４５の不要部分をドライエッチング技術によりエッチング除去する場合には、例えば反応性イオンエッチング装置などを用いればよい。また、本実施形態では、上述の導電性層形成工程とパターニング工程とで、所望のレンズ形状に応じて半導体ウェハ４０との接触パターンを設計した陽極４６を半導体ウェハ４０の上記一表面側に形成する陽極形成工程を構成している。   After the conductive layer forming step, a patterning step for patterning the conductive layer 45 so as to provide a circular opening 47 in the conductive layer 45 is performed, thereby obtaining the structure shown in FIG. Here, in the patterning step, a resist layer (not shown) having a portion corresponding to the opening 47 is formed on the one surface side of the semiconductor wafer 40 by using a photolithography technique, and then the resist layer The unnecessary portion of the conductive layer 45 is removed by etching using, for example, a wet etching technique or a dry etching technique to form an opening 47 to form an anode 46 composed of the remaining portion of the conductive layer 45, and then The resist layer is removed. If the conductive layer 45 is an Al film or an Al—Si film, when unnecessary portions of the conductive layer 45 are etched away by a wet etching technique, for example, a phosphoric acid-based etchant may be used. For example, a reactive ion etching apparatus or the like may be used when the unnecessary portion is removed by dry etching. Further, in the present embodiment, the anode 46 in which the contact pattern with the semiconductor wafer 40 is designed according to the desired lens shape is formed on the one surface side of the semiconductor wafer 40 in the conductive layer forming process and the patterning process. The anode forming step is configured.

上述のパターニング工程の後、陽極酸化用の電解液Ｂ（図５参照）中で半導体ウェハ４０の他表面側（図４（ａ）の上面側）に対向配置される陰極１２５（図５参照）と陽極４６との間に通電して半導体ウェハ４０の上記他表面側に除去部位となる多孔質シリコンからなる多孔質部４８を形成する陽極酸化工程（陽極酸化処理）を行うことによって、図４（ｄ）に示す構造を得る。なお、本実施形態では、半導体ウェハ４０として、導電形がｐ形のものを用いているので、陽極酸化工程において半導体ウェハ４０の上記他表面側に光を照射する必要はないが、半導体ウェハ４０として導電形がｎ形のものを用いる場合には光を照射する必要がある。また、電解液Ｂとしては、５５ｗｔ％のフッ化水素水溶液とエタノールとを１：１で混合した混合溶液を用いているが、フッ化水素水溶液の濃度やフッ化水素水溶液とエタノールとの混合比は特に限定するものではない。また、フッ化水素水溶液と混合する液体もエタノールに限らず、メタノール、プロパノール、イソプロパノール（ＩＰＡ）などのアルコールなど、陽極酸化反応で発生した気泡を除去できる液体であれば、特に限定するものではない。   After the patterning process described above, the cathode 125 (see FIG. 5) disposed opposite to the other surface side (the upper surface side of FIG. 4A) of the semiconductor wafer 40 in the electrolytic solution B for anodization (see FIG. 5). 4 is performed by conducting an anodic oxidation process (anodic oxidation process) in which a porous portion 48 made of porous silicon serving as a removal site is formed on the other surface side of the semiconductor wafer 40 by energizing between the anode 46 and the anode 46. The structure shown in (d) is obtained. In the present embodiment, since the semiconductor wafer 40 having a p-type conductivity is used, it is not necessary to irradiate the other surface side of the semiconductor wafer 40 with light in the anodic oxidation process. When using an n-type conductivity type, it is necessary to irradiate light. Further, as the electrolytic solution B, a mixed solution in which a 55 wt% hydrogen fluoride aqueous solution and ethanol are mixed at a ratio of 1: 1 is used. The concentration of the hydrogen fluoride aqueous solution and the mixing ratio of the hydrogen fluoride aqueous solution and ethanol are used. Is not particularly limited. Also, the liquid mixed with the aqueous hydrogen fluoride solution is not limited to ethanol, and is not particularly limited as long as it is a liquid that can remove bubbles generated by an anodizing reaction, such as alcohol such as methanol, propanol, and isopropanol (IPA). .

ところで、ｐ形のシリコンウェハからなる半導体ウェハ４０の一部を陽極酸化工程において多孔質化する際には、ホールをｈ＋、電子をｅ−とすると、以下の反応が起こっていると考えられる。
Ｓｉ＋２ＨＦ＋（２−ｎ）ｈ＋→ＳｉＦ２＋２Ｈ＋＋ｎｅ−
ＳｉＦ２＋２ＨＦ→ＳｉＦ４＋Ｈ２
ＳｉＦ４＋２ＨＦ→ＳｉＨ２Ｆ６
すなわち、シリコンウェハからなる半導体ウェハ４０の陽極酸化では、Ｆイオンの供給量とホールｈ＋の供給量との兼ね合いで多孔質化あるいは電解研磨が起こることが知られており、Ｆイオンの供給量の方がホールの供給量よりも多い場合には多孔質化が起こり、ホールｈ＋の供給量がＦイオンの供給量よりも多い場合には電解研磨が起こる。したがって、本実施形態のように半導体ウェハ４０としてｐ形のシリコンウェハを用いている場合には、陽極酸化による多孔質化の速度はホールｈ＋の供給量で決まるから、半導体ウェハ４０中を流れる電流の電流密度で多孔質化の速度が決まり、多孔質部４８の厚みが決まることになる。本実施形態では、半導体ウェハ４０中を図５の矢印で示すような経路で電流が流れるので、半導体ウェハ４０の上記他表面側では、陽極４６の厚み方向に沿った開孔部４７の中心線から離れるほど電流密度が徐々に大きくなるような電流密度の面内分布を有することとなり、半導体ウェハ４０の上記他表面側に形成される多孔質部４８は、陽極４６の開孔部４７の上記中心線に近くなるほど徐々に薄くなっている。なお、上述の電流密度の面内分布は、陽極４６と陰極１２５との間に通電しているときに陽極４７と半導体ウェハ４０との接触パターンなどにより決まる半導体ウェハ４０内の電界強度の分布に応じて発生し、電界強度が強いほど電流密度が大きくなり、電界強度が弱いほど電流密度が小さくなる。 By the way, when a part of the semiconductor wafer 40 made of a p-type silicon wafer is made porous in the anodic oxidation step, it is considered that the following reaction occurs when the hole is h + and the electron is e −. .
Si + 2HF + (2-n) h + → SiF 2 + 2H + + ne −
SiF 2 + 2HF → SiF 4 + H 2
SiF 4 + 2HF → SiH 2 F 6
That is, in the anodic oxidation of the semiconductor wafer 40 made of a silicon wafer, it is known that porosity or electropolishing occurs due to the balance between the supply amount of F ions and the supply amount of holes h + , and the supply amount of F ions. When the number of holes is larger than the supply amount of holes, porous formation occurs, and when the supply amount of holes h + is larger than the supply amount of F ions, electrolytic polishing occurs. Therefore, when a p-type silicon wafer is used as the semiconductor wafer 40 as in the present embodiment, the rate of pore formation by anodic oxidation is determined by the supply amount of holes h + , and therefore flows in the semiconductor wafer 40. The speed of porous formation is determined by the current density of the current, and the thickness of the porous portion 48 is determined. In the present embodiment, a current flows through the semiconductor wafer 40 along a path indicated by an arrow in FIG. 5, so that the center line of the opening 47 along the thickness direction of the anode 46 is formed on the other surface side of the semiconductor wafer 40. The in-plane distribution of the current density is such that the current density gradually increases as the distance from the surface of the semiconductor wafer 40 increases. The porous portion 48 formed on the other surface side of the semiconductor wafer 40 has the above-described opening 47 of the anode 46. The closer it is to the center line, the thinner it becomes. The in-plane distribution of the current density described above is a distribution of the electric field strength in the semiconductor wafer 40 determined by the contact pattern between the anode 47 and the semiconductor wafer 40 when the anode 46 and the cathode 125 are energized. The current density increases as the electric field strength increases, and the current density decreases as the electric field strength decreases.

上述の陽極酸化工程の終了後、多孔質部４８を除去する多孔質部除去工程を行うことによって、図４（ｅ）に示す構造の第２の赤外線透過部材４１を得る。ここにおいて、多孔質シリコンからなる多孔質部４８を除去するエッチング液としてアルカリ系溶液（例えば、ＫＯＨ、ＮａＯＨ、ＴＭＡＨなどの水溶液）やＨＦ系溶液を用いれば、多孔質部４８を除去する多孔質部除去工程において、Ａｌ膜やＡｌ−Ｓｉ膜により形成されている陽極４６もエッチング除去することができる。   After the above-described anodic oxidation step is completed, the porous portion removing step for removing the porous portion 48 is performed to obtain the second infrared transmitting member 41 having the structure shown in FIG. Here, if an alkaline solution (for example, an aqueous solution of KOH, NaOH, TMAH, or the like) or an HF solution is used as an etching solution for removing the porous portion 48 made of porous silicon, the porous portion 48 is removed. In the part removing step, the anode 46 formed of an Al film or an Al—Si film can also be removed by etching.

多孔質部除去工程の後は、半導体ウェハ４０の上記一表面側に赤外線光学フィルタ膜４３を積層するフィルタ膜形成工程を行うとともに半導体ウェハ４０の上記他表面側に赤外線反射防止膜４４を積層する反射防止膜形成工程を行ってから、個々の第２の赤外線透過部材４２に分離するダイシング工程を行えばよい。   After the porous portion removing step, a filter film forming step of laminating the infrared optical filter film 43 on the one surface side of the semiconductor wafer 40 is performed and an infrared antireflection film 44 is laminated on the other surface side of the semiconductor wafer 40. After performing the antireflection film forming step, a dicing step for separating the individual second infrared transmitting members 42 may be performed.

上述の第２の赤外線透過部材４２の製造方法によれば、陽極形成工程にて形成する陽極４６と半導体ウェハ４０との接触パターンにより陽極酸化工程において半導体ウェハ４０に流れる電流の電流密度の面内分布が決まるので、陽極酸化工程にて形成する多孔質部４８の厚みの面内分布を制御することができて厚みが連続的に変化した多孔質部４８を形成することが可能であり、当該多孔質部４８を多孔質部除去工程にて除去することで所望のレンズ形状の第２の赤外線透過部材４２が形成されるから、高価な精密研磨装置を用いることなく所望のレンズ形状（任意形状）の第２の赤外線透過部材４２を低コストで製造することが可能となる。また、上述の第２の赤外線透過部材４２の製造方法では、レンズ径が数ｍｍ程度のレンズ形状でも１回の陽極酸化工程と１回の多孔質部除去工程とで形成することができるという利点もある。   According to the method of manufacturing the second infrared transmitting member 42 described above, the current density of the current flowing in the semiconductor wafer 40 in the anodizing process is determined by the contact pattern between the anode 46 formed in the anode forming process and the semiconductor wafer 40. Since the distribution is determined, it is possible to control the in-plane distribution of the thickness of the porous portion 48 formed in the anodic oxidation step, and it is possible to form the porous portion 48 having a continuously changing thickness. Since the second infrared transmitting member 42 having a desired lens shape is formed by removing the porous portion 48 in the porous portion removing step, the desired lens shape (arbitrary shape) is used without using an expensive precision polishing apparatus. ) Of the second infrared transmitting member 42 can be manufactured at low cost. Moreover, in the manufacturing method of the above-mentioned 2nd infrared rays transmissive member 42, even if the lens diameter is about several mm, it can be formed by one anodic oxidation process and one porous part removal process. There is also.

以上説明した本実施形態の赤外線センサによれば、実施形態１と同様、環境負荷が少なく、且つ、赤外線反射防止膜４４や赤外線光学フィルタ膜４３の剥れを抑制できるとともに高感度化および低コスト化が可能になる。また、本実施形態の赤外線センサでは、第２の赤外線透過部材４２を、赤外線検出素子１の受光面へ赤外線を集光するレンズ形状に形成してあるので、高感度化を図れ、しかも、当該レンズ形状の第２の赤外線透過部材４２が、レンズ形状に応じてシリコン基板である半導体ウェハ４０との接触パターンを設計した陽極４６を半導体ウェハ４０の上記一表面側に半導体ウェハ４０との接触がオーミック接触となるように形成した後に半導体ウェハ４０の構成元素の酸化物をエッチング除去する溶液からなる電解液Ｂ中で半導体ウェハ４０の上記他表面側を陽極酸化することで除去部位となる多孔質部４８を形成してから当該多孔質部４８を除去することにより形成されているので、高価な精密研磨装置を用いて形成されている場合に比べて、第２の赤外線透過部材４２の低コスト化を図れる。   According to the infrared sensor of the present embodiment described above, as in the first embodiment, the environmental load is small, the peeling of the infrared antireflection film 44 and the infrared optical filter film 43 can be suppressed, and high sensitivity and low cost can be achieved. Can be realized. Moreover, in the infrared sensor of this embodiment, since the 2nd infrared transmissive member 42 is formed in the lens shape which condenses infrared rays to the light-receiving surface of the infrared detection element 1, high sensitivity can be achieved, and the said The second infrared transmitting member 42 in the shape of a lens has an anode 46 designed with a contact pattern with the semiconductor wafer 40 that is a silicon substrate in accordance with the lens shape. The contact with the semiconductor wafer 40 is made on the one surface side of the semiconductor wafer 40. Porous that becomes a removal site by anodizing the other surface side of the semiconductor wafer 40 in the electrolytic solution B made of a solution for etching and removing oxides of constituent elements of the semiconductor wafer 40 after forming the ohmic contact. Since it is formed by removing the porous portion 48 after forming the portion 48, compared to the case where it is formed using an expensive precision polishing apparatus, It attained the cost of the second infrared transmitting member 42.

また、本実施形態の赤外線センサでは、ＺｎＳにより形成された第１の赤外線透過部材４１の形状が平板状であり、Ｓｉにより形成された第２の赤外線透過部材４２の形状が平凸型の非球面レンズのレンズ形状であるので、ＺｎＳに比べて屈折率の大きいＳｉにより形成される第２の赤外線透過部材４２をレンズ形状とすることで、第２の赤外線透過部材４２を実施形態１の第１の赤外線透過部材４１に比べて短焦点のレンズとして用いることが可能となり、結果的に、第２の赤外線透過部材４２を実施形態１の赤外線透過部材４１に比べて薄型化することができ、第２の赤外線透過部材４２と第１の赤外線透過部材４１とを合わせた厚みを実施形態１に比べて薄くできるので、実施形態１に比べて赤外線センサ全体の低背化を図れる。   In the infrared sensor of the present embodiment, the shape of the first infrared transmitting member 41 formed of ZnS is a flat plate shape, and the shape of the second infrared transmitting member 42 formed of Si is a plano-convex non-type. Since the lens shape is a spherical lens, the second infrared transmitting member 42 of the first embodiment is formed by forming the second infrared transmitting member 42 made of Si having a refractive index larger than that of ZnS into a lens shape. As a result, the second infrared transmitting member 42 can be made thinner than the infrared transmitting member 41 of the first embodiment. Since the total thickness of the second infrared transmitting member 42 and the first infrared transmitting member 41 can be made thinner than that in the first embodiment, the overall height of the infrared sensor can be reduced as compared with the first embodiment.

（実施形態３）
本実施形態の赤外線センサの基本構成は実施形態１と略同じであって、図６に示すように、第２の赤外線透過部材４２として、実施形態２と同様にレンズ形状に形成されたものを用いている点が相違する。なお、実施形態１，２と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 3)
The basic configuration of the infrared sensor of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 6, the second infrared transmitting member 42 is formed in a lens shape as in the second embodiment. The point of using is different. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, 2, and description is abbreviate | omitted.

しかして、本実施形態の赤外線センサによれば、実施形態１と同様、環境負荷が少なく、且つ、赤外線反射防止膜４４や赤外線光学フィルタ膜４３の剥れを抑制できるとともに高感度化および低コスト化が可能になる。また、本実施形態の赤外線センサでは、第１の赤外線透過部材４１と第２の赤外線透過部材４２とがそれぞれレンズ形状に形成されているので、第１の赤外線透過部材４１と第２の赤外線透過部材４２とで構成される光学系により、高解像度の光学系を実現することが可能となるとともに、より一層の高感度化を図れる。   Therefore, according to the infrared sensor of the present embodiment, as in the first embodiment, the environmental load is small, the peeling of the infrared antireflection film 44 and the infrared optical filter film 43 can be suppressed, and high sensitivity and low cost can be achieved. Can be realized. Moreover, in the infrared sensor of this embodiment, since the 1st infrared transmission member 41 and the 2nd infrared transmission member 42 are each formed in the lens shape, the 1st infrared transmission member 41 and the 2nd infrared transmission are carried out. The optical system constituted by the member 42 can realize a high-resolution optical system and can achieve higher sensitivity.

（実施形態４）
本実施形態の赤外線センサの基本構成は実施形態１と略同じであって、図７に示すように、パッケージ２がキャンパッケージにより構成されている点が相違する。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 4)
The basic configuration of the infrared sensor of the present embodiment is substantially the same as that of the first embodiment, and is different in that the package 2 is configured by a can package as shown in FIG. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

本実施形態におけるパッケージ２は、赤外線検出素子１および信号処理ＩＣチップ５が実装される円盤状の金属ベース（ステム）２４と、後面が開放された有底円筒状に形成され赤外線検出素子１および信号処理ＩＣチップ５を覆うように金属ベース２４に封着される金属製のキャップ２５とで構成されており、キャップ２５において赤外線検出素子１の前方（図７の上方）に位置する前壁に開口部２ａが形成されている。また、本実施形態では、実施形態１と同様に、パッケージ２と第１の赤外線透過部材４１とで囲まれた空間を真空雰囲気としてある。なお、本実施形態では、金属ベース２４が、赤外線検出素子１が実装される実装部材を構成し、キャップ２５が、開口部２ａを有し実装部材との間に赤外線検出素子１を囲む形で実装部材に接合されるカバー部材を構成している。   The package 2 in the present embodiment is formed in a disk-shaped metal base (stem) 24 on which the infrared detection element 1 and the signal processing IC chip 5 are mounted, and a bottomed cylindrical shape with an open rear surface. It is comprised with the metal cap 25 sealed by the metal base 24 so that the signal processing IC chip 5 may be covered, and in the front wall located in front of the infrared detection element 1 (upper part of FIG. 7) in the cap 25 An opening 2a is formed. In the present embodiment, as in the first embodiment, the space surrounded by the package 2 and the first infrared transmitting member 41 is a vacuum atmosphere. In the present embodiment, the metal base 24 constitutes a mounting member on which the infrared detection element 1 is mounted, and the cap 25 has an opening 2a and surrounds the infrared detection element 1 between the mounting member. The cover member joined to the mounting member is configured.

ここにおいて、キャップ２５および金属ベース２４は、コバールなどの金属材料により形成されており、キャップ２５の表面にはＮｉのめっきが施され、金属ベース２４におけるキャップ２５との接合部位にはＮｉのめっきを施した後にＡｕのめっきが施されている。   Here, the cap 25 and the metal base 24 are made of a metal material such as Kovar, the surface of the cap 25 is plated with Ni, and the portion of the metal base 24 that is joined to the cap 25 is plated with Ni. After applying, Au plating is applied.

金属ベース２４は、信号処理ＩＣチップ５のパッド（図示せず）とボンディングワイヤ（図示せず）を介して電気的に接続される複数本の端子ピン２６が挿通される複数の端子用孔（図示せず）が厚み方向に貫設されており、端子ピン２６が上記端子用孔に挿通された形で封止部（図示せず）により封着されている。端子ピン２６の材料としては、封着合金の一種であるコバールを採用しているが、他の封着合金や封着金属などを採用してもよい。なお、複数本の端子ピン２６は、信号出力用の端子ピン２５、給電用の端子ピン２６、グランド用の端子ピン２６などがあり。信号出力用の端子ピン２５、給電用の端子ピン２６を封着する封止部は、絶縁性を有する鉛フリーのガラスフリットにより形成されており、グランド用の端子ピン２６を封着する封止部は、金属材料により形成されている。要するに、信号出力用の端子ピン２６および給電用の端子ピン２６は金属ベース２４と電気的に絶縁されているのに対し、グランド用の端子ピン２６は金属ベース２４と同電位となっている。しかして、本実施形態の赤外線センサも、実施形態１と同様に、外来の電磁ノイズに対するシールド効果を高めることができ、Ｓ／Ｎ比の向上による高感度化を図れる。   The metal base 24 has a plurality of terminal holes (through which a plurality of terminal pins 26 electrically connected via pads (not shown) of the signal processing IC chip 5 and bonding wires (not shown) are inserted. The terminal pin 26 is sealed by a sealing portion (not shown) in a form inserted through the terminal hole. As a material for the terminal pin 26, Kovar, which is a kind of sealing alloy, is used, but other sealing alloys, sealing metals, and the like may be used. The plurality of terminal pins 26 include a signal output terminal pin 25, a power supply terminal pin 26, a ground terminal pin 26, and the like. The sealing portion that seals the signal output terminal pin 25 and the power supply terminal pin 26 is formed of an insulating lead-free glass frit and seals the ground terminal pin 26. The part is formed of a metal material. In short, the signal output terminal pin 26 and the power supply terminal pin 26 are electrically insulated from the metal base 24, whereas the ground terminal pin 26 has the same potential as the metal base 24. Thus, the infrared sensor of the present embodiment can also enhance the shielding effect against external electromagnetic noise as in the first embodiment, and can achieve high sensitivity by improving the S / N ratio.

本実施形態の赤外線センサの製造にあたっては、第１の赤外線透過部材４１をキャップ２５に対して、鉛フリーのガラスフリットからなる接合部５１により固着した後で、真空中において、金属ベース２４の周部に対して、キャップ２５の後端縁から外方に延設された外鍔部２５ｃを、抵抗溶接により接合することでキャップ２５を封着し、その後、キャップ２５に第２の赤外線透過部材４２をキャップ２５に対して、実施形態１と同様の鉛フリーの導電性接着剤や樹脂系接着剤からなる接合部５２により固着するようにしている。   In manufacturing the infrared sensor of the present embodiment, the first infrared transmitting member 41 is fixed to the cap 25 by the joint portion 51 made of lead-free glass frit, and then the metal base 24 is surrounded in vacuum. The cap 25 is sealed by joining an outer flange portion 25c extending outward from the rear end edge of the cap 25 to the portion by resistance welding, and then the second infrared transmitting member is attached to the cap 25. 42 is fixed to the cap 25 by a joint portion 52 made of a lead-free conductive adhesive or resin adhesive similar to that of the first embodiment.

しかして、本実施形態の赤外線センサによれば、実施形態１と同様、環境負荷が少なく、且つ、赤外線反射防止膜４４や赤外線光学フィルタ膜４３の剥れを抑制できるとともに高感度化および低コスト化が可能になる。なお、第１の赤外線透過部材４１と第２の赤外線透過部材４２との組み合わせは、実施形態１の組み合わせに限らず、実施形態２や実施形態３の組み合わせでもよい。   Therefore, according to the infrared sensor of the present embodiment, as in the first embodiment, the environmental load is small, the peeling of the infrared antireflection film 44 and the infrared optical filter film 43 can be suppressed, and high sensitivity and low cost can be achieved. Can be realized. The combination of the first infrared transmitting member 41 and the second infrared transmitting member 42 is not limited to the combination of the first embodiment, and may be a combination of the second embodiment or the third embodiment.

１ 赤外線検出素子
２ パッケージ
２ａ 開口部
２１ パッケージ本体（実装部材）
２２ パッケージ蓋（カバー部材）
２４ 金属ベース（実装部材）
２５ キャップ（カバー部材）
４１ 第１の赤外線透過部材
４２ 第２の赤外線透過部材
４３ 赤外線光学フィルタ膜
４４ 赤外線反射防止膜
５１ 接合部
５２ 接合部 1 Infrared detector 2 Package 2a Opening 21 Package body (mounting member)
22 Package lid (cover member)
24 Metal base (mounting member)
25 Cap (cover member)
41 First Infrared Transmitting Member 42 Second Infrared Transmitting Member 43 Infrared Optical Filter Film 44 Infrared Antireflective Film 51 Bonding Portion 52 Bonding Portion

Claims (3)

熱型の赤外線受光素子と、無機材料により形成され赤外線検出素子を収納するパッケージであり赤外線検出素子の前方に開口部が形成されたパッケージと、第１の赤外線透過材料により形成されパッケージの内側から開口部を閉塞する形でパッケージに固着された第１の赤外線透過部材と、第２の赤外線透過材料により形成されパッケージの外側から開口部を閉塞する形でパッケージに固着された第２の赤外線透過部材とを備え、パッケージと第１の赤外線透過部材とで囲まれた空間を真空雰囲気としてある赤外線センサであって、パッケージが、赤外線検出素子が実装される実装部材と、前記開口部を有し実装部材との間に赤外線検出素子を囲む形で実装部材に接合されるカバー部材とで構成されてなり、第１の赤外線透過材料がＺｎＳであり、第１の赤外線透過部材が、鉛フリーのガラスフリットによりカバー部材に固着されてなり、第２の赤外線透過材料がＳｉであり、第２の赤外線透過部材に、赤外線光学フィルタ膜と赤外線反射防止膜との少なくとも一方が積層されてなり、当該第２の赤外線透過部材が、鉛フリーの導電性接着剤もしくは樹脂系接着剤によりカバー部材に固着されてなることを特徴とする赤外線センサ。   A thermal infrared receiving element, a package made of an inorganic material and containing an infrared detecting element and having an opening formed in front of the infrared detecting element, and a first infrared transmitting material formed from the inside of the package A first infrared transmission member fixed to the package so as to close the opening, and a second infrared transmission made of the second infrared transmission material and fixed to the package so as to close the opening from the outside of the package An infrared sensor having a space surrounded by the package and the first infrared transmitting member as a vacuum atmosphere, the package having a mounting member on which an infrared detection element is mounted and the opening And a cover member joined to the mounting member so as to surround the infrared detection element between the mounting member and the first infrared transmitting material is made of ZnS. The first infrared transmitting member is fixed to the cover member with a lead-free glass frit, the second infrared transmitting material is Si, and the second infrared transmitting member is provided with an infrared optical filter film and an infrared reflecting material. An infrared sensor characterized in that at least one of the protective film is laminated and the second infrared transmitting member is fixed to the cover member with a lead-free conductive adhesive or a resin adhesive. 前記第１の赤外線透過部材と前記第２の赤外線透過部材との少なくとも一方が、前記赤外線検出素子へ赤外線を集光するレンズ形状に形成されてなることを特徴とする請求項１記載の赤外線センサ。   2. The infrared sensor according to claim 1, wherein at least one of the first infrared transmitting member and the second infrared transmitting member is formed in a lens shape for condensing infrared rays on the infrared detection element. . 前記第２の赤外線透過部材は、シリコン基板を用いて前記赤外線検出素子へ赤外線を集光するレンズ形状に形成されたものであり、前記レンズ形状に応じてシリコン基板との接触パターンを設計した陽極をシリコン基板の一表面側にシリコン基板との接触がオーミック接触となるように形成した後にシリコン基板の構成元素の酸化物をエッチング除去する溶液からなる電解液中でシリコン基板の他表面側を陽極酸化することで除去部位となる多孔質部を形成してから当該多孔質部を除去することにより形成されてなることを特徴とする請求項１記載の赤外線センサ。   The second infrared transmitting member is formed in a lens shape for condensing infrared rays to the infrared detection element using a silicon substrate, and an anode in which a contact pattern with the silicon substrate is designed according to the lens shape Is formed on the one surface side of the silicon substrate so that the contact with the silicon substrate becomes ohmic contact, and then the other surface side of the silicon substrate is anoded in an electrolytic solution composed of a solution for etching away oxides of constituent elements of the silicon substrate. The infrared sensor according to claim 1, wherein the infrared sensor is formed by forming a porous part to be a removal site by oxidation and then removing the porous part.
JP2009175859A 2009-07-28 2009-07-28 Infrared sensor Ceased JP2011027643A (en)

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WO2014077485A1 (en) * 2012-11-16 2014-05-22 레이트론(주) Optical sensor package using transparent housing
JP2020513562A (en) * 2016-12-13 2020-05-14 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Microbolometer focal plane array with integrated multi-spectral mosaic bandpass filter / focus lens array for simultaneous real-time anesthesia and respiratory gas concentration detection and measurement signal processing
JP7048610B2 (en) 2016-12-13 2022-04-05 コーニンクレッカ フィリップス エヌ ヴェ Microbolometer focal plane array with integrated multispectral mosaic bandpass filter / focal lens array for simultaneous real-time anesthesia and respiratory gas concentration detection as well as measurement signal processing
JP7048610B6 (en) 2016-12-13 2022-06-01 コーニンクレッカ フィリップス エヌ ヴェ Microbolometer focal plane array with integrated multispectral mosaic bandpass filter / focal lens array for simultaneous real-time anesthesia and respiratory gas concentration detection as well as measurement signal processing

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