JP2011005567A - Surface coated cutting tool excellent in chipping resistance and peeling resistance of hard coating layer - Google Patents
Surface coated cutting tool excellent in chipping resistance and peeling resistance of hard coating layer Download PDFInfo
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- 238000005520 cutting process Methods 0.000 title claims abstract description 77
- 239000011247 coating layer Substances 0.000 title claims abstract description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 136
- 239000013078 crystal Substances 0.000 claims abstract description 136
- 239000010410 layer Substances 0.000 claims abstract description 103
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 68
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 20
- 238000010894 electron beam technology Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 14
- 239000000843 powder Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 238000005259 measurement Methods 0.000 description 12
- 238000007733 ion plating Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000003466 welding Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910001018 Cast iron Inorganic materials 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 229910001315 Tool steel Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010730 cutting oil Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 102200082907 rs33918131 Human genes 0.000 description 1
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Abstract
Description
この発明は、WC基超硬合金からなる切削工具基体表面に、少なくともTiN層を含む硬質被覆層が物理蒸着により形成されてなる表面被覆切削工具において、工具基体表面とTiN層間に、ヘテロエピタキシャル界面を形成することにより、溶着チッピングの生じやすい小径低速切削加工、あるいは、切刃に対して高負荷が作用する高速重切削加工において、硬質被覆層が優れた耐欠損性、耐剥離性を示す表面被覆切削工具(以下、被覆工具という)に関するものである。 The present invention relates to a surface-coated cutting tool in which a hard coating layer including at least a TiN layer is formed by physical vapor deposition on a cutting tool base surface made of a WC-based cemented carbide, and a heteroepitaxial interface between the tool base surface and the TiN layer. The surface of the hard coating layer has excellent chipping resistance and peeling resistance in small-diameter low-speed cutting processing where welding chipping is likely to occur or high-speed heavy cutting processing in which a high load acts on the cutting edge. The present invention relates to a coated cutting tool (hereinafter referred to as a coated tool).
一般に、被覆工具には、各種の鋼や鋳鉄などの被削材の旋削加工にバイトの先端部に着脱自在に取り付けて用いられるインサートや、前記インサートを着脱自在に取り付けて、面削加工や溝加工、さらに肩加工などに用いられるソリッドタイプのエンドミルと同様に切削加工を行うインサート式エンドミルや、穴あけ加工を行うドリルなどが知られている。 In general, for coated tools, inserts that are detachably attached to the tip of a cutting tool for turning of work materials such as various types of steel and cast iron, and the inserts are detachably attached to be used for chamfering and grooving. An insert-type end mill that performs cutting similarly to a solid-type end mill used for machining and shoulder processing, and a drill that performs drilling are known.
例えば、特許文献1においては、WC基超硬合金からなる切削工具基体表面に、化学蒸着(CVD)法により硬質被覆層としてのTiCN層を蒸着形成するにあたり、WC結晶粒とTiCN結晶粒との間にエピタキシャル界面(例えば、WCの(0001)面とTiCNの(111)面が平行で、かつ、WCの[11−20]方位とTiCNの[−110]方位が平行である界面)を形成することにより、工具基体と硬質被覆層間の付着性の改善を図ることが知られている。 For example, in Patent Document 1, when forming a TiCN layer as a hard coating layer by chemical vapor deposition (CVD) on the surface of a cutting tool base made of a WC-based cemented carbide, the WC crystal grains and the TiCN crystal grains An epitaxial interface (for example, an interface in which the (0001) plane of WC and the (111) plane of TiCN are parallel and the [11-20] orientation of WC and the [−110] orientation of TiCN are parallel) is formed between them. By doing so, it is known to improve the adhesion between the tool base and the hard coating layer.
また、例えば、特許文献2においては、WC基超硬合金からなる切削工具基体表面に、TiN層、TiCN層からなる中間層を有する硬質被覆層を物理蒸着(PVD)法の1種であるアークイオンプレーティング(AIP)法により蒸着形成する被覆工具(以下、従来被覆工具という)において、WCの(0001)面と中間層の(1−11)面が平行で、かつ、WCの<11−20>方位と中間層の<110>方位とが平行であるエピタキシャル界面を形成することにより、中間層(硬質被覆層)の耐欠損性、耐剥離性を高めることが知られている。 Further, for example, in Patent Document 2, an arc, which is a kind of physical vapor deposition (PVD) method, has a hard coating layer having a TiN layer and an intermediate layer made of a TiCN layer on the surface of a cutting tool base made of a WC-based cemented carbide. In a coated tool (hereinafter referred to as a conventional coated tool) formed by vapor deposition by an ion plating (AIP) method, the (0001) plane of WC and the (1-11) plane of the intermediate layer are parallel, and <11- It is known that by forming an epitaxial interface in which the 20> orientation and the <110> orientation of the intermediate layer are parallel, the chipping resistance and peeling resistance of the intermediate layer (hard coating layer) are improved.
近年の切削加工装置のFA化はめざましく、加えて切削加工に対する省力化、省エネ化、低コスト化さらに効率化の要求も強く、より一層厳しい条件下での切削加工が行われるようになってきており、これらの切削条件に適う切削性能を備えた被覆工具が求められている。
例えば、上記特許文献1に示す被覆工具においては、工具基体と硬質被覆層間に、化学蒸着(CVD)法によるエピタキシャル界面を形成することにより、硬質被覆層の付着性を改善する試みがなされているが、化学蒸着(CVD)法でエピタキシャル界面を形成しようとする場合、エピタキシャル界面の生成が実質的にWC結晶粒の(0001)面上あるいは(10−10)面上に限られていることから、より高次なWC結晶面が露出している一般的な工具基体表面上においては、エピタキシャル界面が形成される面積割合が十分とは言えず、付着力の弱い非エピタキシャル界面が広く形成され、重切削時には弱い界面が膜剥離の起点となるため、所望の耐剥離性が得られないばかりか、蒸着時に基体が高温(約1000℃)に曝されるため、基体組織にη相が形成され、残留応力が導入できず、クラックが発生しやすくなるため、付着性の改善が図られたとしても、被覆工具としての切削性能が満足できるものであるとはいえない。
また、上記特許文献2に示す従来被覆工具においては、物理蒸着(PVD)法により、WCの(0001)面とTiNの(111)面が平行で、かつ、WCの[11−20]方位とTiNの[110]方位とが平行であるエピタキシャル界面を形成することにより、通常条件での切削加工においては、硬質被覆層の耐欠損性、耐剥離性の向上が図られるものの、より厳しい切削加工条件下、例えば、高熱発生を伴い切刃に高負荷が作用する鋼や鋳鉄等の高速重切削加工、においては、硬質被覆層の耐欠損性、耐剥離性が不十分であるため、工具寿命が短命であるという問題点があった。また、該従来被覆工具の母材は、(0001)面が成長した板状晶WC粒子を多く含有するという特殊な組成が要求されることから、(0001)面が成長していない市販の超硬合金粉末で作製された一般工具基体や、小径ドリルなどの微細あるいは複雑な形状をもつ工具基体上への適用は実質的に困難であった。
In recent years, FA of cutting devices has been remarkable, and in addition, there has been a strong demand for labor saving, energy saving, cost reduction and efficiency for cutting, and cutting under more severe conditions has come to be performed. Therefore, a coated tool having a cutting performance suitable for these cutting conditions is required.
For example, in the coated tool shown in Patent Document 1, an attempt is made to improve the adhesion of the hard coating layer by forming an epitaxial interface by a chemical vapor deposition (CVD) method between the tool base and the hard coating layer. However, when an epitaxial interface is formed by a chemical vapor deposition (CVD) method, the formation of the epitaxial interface is substantially limited to the (0001) plane or the (10-10) plane of the WC crystal grain. On the surface of a general tool substrate where higher order WC crystal planes are exposed, the area ratio in which the epitaxial interface is formed is not sufficient, and a non-epitaxial interface with weak adhesion is widely formed. Since the weak interface at the time of heavy cutting is the starting point of film peeling, the desired peeling resistance cannot be obtained, and the substrate is exposed to a high temperature (about 1000 ° C.) during vapor deposition. Since the η phase is formed in the substrate structure, residual stress cannot be introduced, and cracks are likely to occur, so that even if the adhesion is improved, the cutting performance as a coated tool is satisfactory. I can't say that.
In the conventional coated tool shown in Patent Document 2, the WC (0001) plane and the TiN (111) plane are parallel and the WC [11-20] orientation is measured by physical vapor deposition (PVD). By forming an epitaxial interface parallel to the [110] orientation of TiN, it is possible to improve the chipping resistance and peeling resistance of the hard coating layer in cutting under normal conditions. Under the conditions, for example, in high-speed heavy cutting such as steel or cast iron, where high load acts on the cutting edge with high heat generation, the chipping life and tooling resistance of the hard coating layer is insufficient, so the tool life There was a problem that was short-lived. In addition, since the base material of the conventional coated tool is required to have a special composition that contains a large amount of plate-like WC particles with a (0001) plane grown, a commercially available ultrathin with no (0001) plane grown. Application to a general tool base made of a hard alloy powder or a tool base having a fine or complicated shape such as a small diameter drill has been substantially difficult.
そこで、本発明者等は、上述のような観点から、溶着チッピングの生じやすい小径低速切削加工、あるいは、切刃に対して高負荷が作用する高速重切削加工高熱発生を伴い切刃に高負荷が作用する鋼や鋳鉄等の高速重切削加工に用いた場合でも、耐欠損性、耐剥離性のすぐれた被覆工具を提供すべく、鋭意研究を行った結果、以下の知見を得た。 In view of the above, the inventors of the present invention have proposed that the cutting blade is subjected to a high load due to high-temperature heavy cutting, which is a small-diameter low-speed cutting process in which welding chipping is likely to occur, or a high load acts on the cutting edge. As a result of earnest research to provide a coated tool with excellent fracture resistance and exfoliation resistance even when used for high-speed heavy cutting of steel, cast iron, etc., the following knowledge was obtained.
工具基体表面と硬質被覆層間のエピタキシャル界面の形成を、上記特許文献1に示される被覆工具では化学蒸着(CVD)法で、また、上記特許文献2に示される被覆工具では物理蒸着(PVD)法の1種であるアークイオンプレーティング(AIP)法により行っていた。
しかし、本発明者らは、WC基超硬合金からなる工具基体(以下、WC超硬基体という)表面に隣接する硬質被覆層としてのTiN層の形成を、例えば図1に概略説明図で示される物理蒸着(PVD)装置の1種である圧力勾配型Arプラズマガンを利用したイオンプレーティング装置により形成することにより、WC超硬基体表面と硬質被覆層(TiN層)間に、特定のエピタキシャル関係を満足するヘテロエピタキシャル界面を形成し得ることを見出した。
即ち、WC超硬基体を、上記の圧力勾配型Arプラズマガンを利用したイオンプレーティング装置内に装着し、例えば、
WC超硬基体温度:200〜450 ℃、
プラズマガン放電電力:3 kW、
放電ガス流量:アルゴン(Ar)ガス 25〜40 sccm、
工具基体に印加する直流バイアス電圧: −500 V
という特定の条件で前処理を行ったのち、
WC超硬基体温度:200〜450 ℃、
蒸発源:金属Ti、
プラズマガン放電電力:12 kW、
反応ガス流量:窒素(N2)ガス 50〜150 sccm、
放電ガス流量:アルゴン(Ar)ガス 30〜60 sccm、
工具基体に印加する直流バイアス電圧: 0 V
という特定の条件で蒸着を行うと、この結果形成されたTiN層(以下、改質TiN層という)中のTiN結晶粒と、WC超硬基体中のWC結晶粒との間には、以下のエピタキシャル関係を満足するヘテロエピタキシャル界面が形成される。
つまり、WC超硬基体と改質TiN層との界面の断面について、電界放出型走査電子顕微鏡と電子線後方散乱回折装置で測定して求めた、WC結晶粒の[0001]方位とTiN結晶粒の[110]方位が平行で、かつ、WC結晶粒の[10−10]方位とTiN結晶粒の[001]方位が平行である結晶粒の占める界面長さをXAとし、
また、同じく電界放出型走査電子顕微鏡と電子線後方散乱回折装置で測定して求めた、WC結晶粒の[0001]方位とTiN結晶粒の[111]方位が平行で、かつ、WC結晶粒の[11−20]方位とTiN結晶粒の[110]方位が平行である結晶粒の、界面の全長に占める長さをXCとした場合に、
上記WC超硬基体表面とこれに隣接する改質TiN層間には、
1>(XA+XC)/X≧0.3、
を満足する(但し、Xは、界面の全長を表す)ヘテロエピタキシャル界面が形成される。
そして、WC超硬基体表面とこれに隣接する改質TiN層間に、上記のヘテロエピタキシャル界面が形成されることにより、WC超硬基体と硬質被覆層との密着強度が大幅に向上し、その結果、このような被覆工具を、溶着チッピングの生じやすい小径低速切削加工、あるいは、切刃に対して高送り、高切込みによる高負荷が作用する高速重切削加工に用いた場合でも、すぐれた耐欠損性、耐剥離性を示し、長期の使用に亘ってすぐれた切削性能を発揮することを見出したのである。
The formation of an epitaxial interface between the tool substrate surface and the hard coating layer is performed by the chemical vapor deposition (CVD) method for the coated tool shown in Patent Document 1 and by the physical vapor deposition (PVD) method for the coated tool shown in Patent Document 2. The arc ion plating (AIP) method, which is one of the above.
However, the present inventors show the formation of a TiN layer as a hard coating layer adjacent to the surface of a tool substrate (hereinafter referred to as a WC cemented carbide substrate) made of a WC-based cemented carbide in, for example, FIG. A specific epitaxial layer is formed between the surface of a WC carbide substrate and a hard coating layer (TiN layer) by using an ion plating apparatus that uses a pressure gradient type Ar plasma gun, which is a kind of physical vapor deposition (PVD) apparatus. It has been found that a heteroepitaxial interface satisfying the relationship can be formed.
That is, a WC carbide substrate is mounted in an ion plating apparatus using the pressure gradient type Ar plasma gun, for example,
WC carbide substrate temperature: 200 to 450 ° C.,
Plasma gun discharge power: 3 kW,
Discharge gas flow rate: Argon (Ar) gas 25-40 sccm,
DC bias voltage applied to the tool base: −500 V
After pre-processing under specific conditions
WC carbide substrate temperature: 200 to 450 ° C.,
Evaporation source: Metal Ti,
Plasma gun discharge power: 12 kW
Reaction gas flow rate: nitrogen (N 2) gas 50 to 150 sccm,
Discharge gas flow rate: Argon (Ar) gas 30-60 sccm,
DC bias voltage applied to the tool base: 0 V
When the vapor deposition is performed under the specific conditions of the following, between the TiN crystal grains in the TiN layer formed as a result (hereinafter referred to as a modified TiN layer) and the WC crystal grains in the WC carbide substrate, A heteroepitaxial interface that satisfies the epitaxial relationship is formed.
That is, the [0001] orientation of the WC crystal grains and the TiN crystal grains obtained by measuring the cross section of the interface between the WC cemented carbide substrate and the modified TiN layer with a field emission scanning electron microscope and an electron beam backscatter diffraction apparatus. a [110] parallel orientation, and the WC grain [10-10] orientation and TiN grain [001] orientation of the interface length occupied by the parallel grain and X a,
Similarly, the [0001] orientation of the WC crystal grain and the [111] orientation of the TiN crystal grain, which were obtained by measurement with a field emission scanning electron microscope and an electron beam backscatter diffraction apparatus, were parallel, and the WC crystal grain When the length of the crystal grains in which the [11-20] orientation and the [110] orientation of the TiN crystal grains are parallel to the total length of the interface is X C ,
Between the WC carbide substrate surface and the modified TiN layer adjacent thereto,
1> (X A + X C ) /X≧0.3,
(Where X represents the total length of the interface), a heteroepitaxial interface is formed.
And, by forming the heteroepitaxial interface between the surface of the WC carbide substrate and the modified TiN layer adjacent thereto, the adhesion strength between the WC carbide substrate and the hard coating layer is greatly improved. Even when such a coated tool is used for small-diameter low-speed cutting, where welding chipping is likely to occur, or high-speed heavy-duty cutting, where high loads are applied to the cutting edge and high cutting depth, excellent fracture resistance It has been found that it exhibits excellent cutting performance over a long period of use.
この発明は、上記の知見に基づいてなされたものであって、
「 炭化タングステン基超硬合金からなる切削工具基体の表面に、少なくともTiN層を含む硬質被覆層が物理蒸着により形成されてなる表面被覆切削工具であって、
上記切削工具基体の表面に隣接して、0.2〜2μmの層厚を有し、幅10〜100nmの柱状晶組織からなるTiN層が形成され、
さらに、上記切削工具基体とTiN層との界面の断面における炭化タングステン結晶粒とTiN結晶粒について、電界放出型走査電子顕微鏡と電子線後方散乱回折装置を用いて、それぞれの結晶面と結晶方位を求め、
(a)炭化タングステン結晶粒の[0001]方位とTiN結晶粒の[110]方位が平行で、かつ、炭化タングステン結晶粒の[10−10]方位とTiN結晶粒の[001]方位が平行である界面の占める長さをXAとし、
(b)炭化タングステン結晶粒の[0001]方位とTiN結晶粒の[111]方位が平行で、かつ、炭化タングステン結晶粒の[11−20]方位とTiN結晶粒の[110]方位が平行である界面の占める長さをXCとした場合に、
上記切削工具基体表面とこれに隣接するTiN層の界面には、
1>(XA+XC)/X≧0.3、
を満足する(但し、Xは、界面の全長を表す)ヘテロエピタキシャル界面が形成されていることを特徴とする表面被覆切削工具。」
に特徴を有するものである。
This invention has been made based on the above findings,
A surface-coated cutting tool in which a hard coating layer including at least a TiN layer is formed on a surface of a cutting tool base made of a tungsten carbide-based cemented carbide by physical vapor deposition,
Adjacent to the surface of the cutting tool base, a TiN layer having a layer thickness of 0.2 to 2 μm and a columnar crystal structure with a width of 10 to 100 nm is formed,
Further, with respect to the tungsten carbide crystal grains and TiN crystal grains in the cross section of the interface between the cutting tool base and the TiN layer, the respective crystal planes and crystal orientations are changed by using a field emission scanning electron microscope and an electron beam backscatter diffraction apparatus. Seeking
(A) The [0001] orientation of the tungsten carbide crystal grains and the [110] orientation of the TiN crystal grains are parallel, and the [10-10] orientation of the tungsten carbide crystal grains and the [001] orientation of the TiN crystal grains are parallel. the length occupied by the certain interface and X a,
(B) The [0001] orientation of the tungsten carbide crystal grains and the [111] orientation of the TiN crystal grains are parallel, and the [11-20] orientation of the tungsten carbide crystal grains and the [110] orientation of the TiN crystal grains are parallel. the length occupied by some interface when the X C,
At the interface between the cutting tool substrate surface and the TiN layer adjacent thereto,
1> (X A + X C ) /X≧0.3,
A surface-coated cutting tool characterized in that a heteroepitaxial interface is formed (where X represents the total length of the interface). "
It has the characteristics.
この発明の被覆工具の、WC超硬基体表面に隣接する硬質被覆層を構成する改質TiN層において、Ti成分は高温強度を向上させ、また、N成分には層の強度を向上させる作用があるため、改質TiN層は、高い硬さとすぐれた強度を具備し、被覆工具の耐摩耗性向上に寄与するが、この発明の被覆工具では、これに加え、さらに、改質TiN層とWC超硬基体表面にヘテロエピタキシャル界面を形成し、改質TiN層とWC超硬基体表面間での密着強度を向上させているので、硬質被覆層の耐欠損性、耐剥離性が大幅に向上し、工具の長寿命化が図られる。 In the modified TiN layer constituting the hard coating layer adjacent to the surface of the WC carbide substrate of the coated tool of the present invention, the Ti component improves the high-temperature strength, and the N component has the effect of improving the layer strength. Therefore, the modified TiN layer has high hardness and excellent strength, and contributes to the improvement of the wear resistance of the coated tool. In addition to this, the modified TiN layer and the WC Since the heteroepitaxial interface is formed on the surface of the carbide substrate and the adhesion strength between the modified TiN layer and the surface of the WC carbide substrate is improved, the chipping resistance and peeling resistance of the hard coating layer are greatly improved. The tool life is extended.
WC超硬基体上へTiN層を蒸着形成するに際し、図1に示される圧力勾配型Arプラズマガンを利用したイオンプレーティングにより、例えば、
WC超硬基体温度:200〜450 ℃、
プラズマガン放電電力:3 kW、
放電ガス流量:アルゴン(Ar)ガス 25〜40 sccm、
工具基体に印加する直流バイアス電圧: −500 V、
という特定の条件でボンバード処理を行ったのち、
WC超硬基体温度:200〜450 ℃、
蒸発源:金属Ti、
プラズマガン放電電力:12 kW、
反応ガス流量:窒素(N2)ガス 100 sccm、
放電ガス流量:アルゴン(Ar)ガス 45 sccm、
工具基体に印加する直流バイアス電圧: 0 V、
蒸着時間: 30〜150 min、
という特定の条件に調整して改質TiN層を蒸着すると、
上記WC超硬基体表面に垂直な任意の断面において、上記WC超硬基体表面とこれに隣接する改質TiN層との界面には、
(a)炭化タングステン結晶粒の[0001]方位とTiN結晶粒の[110]方位が平行で、かつ、炭化タングステン結晶粒の[10−10]方位とTiN結晶粒の[001]方位が平行である界面の占める長さをXAとし、
(b)炭化タングステン結晶粒の[0001]方位とTiN結晶粒の[111]方位が平行で、かつ、炭化タングステン結晶粒の[11−20]方位とTiN結晶粒の[110]方位が平行である界面の占める長さをXCとした場合に、
1>(XA+XC)/X≧0.3、
を満足する(但し、Xは、界面の全長を表す)ヘテロエピタキシャル関係を備えた界面が形成される。
そして、上記の改質TiN層を走査型電子顕微鏡により観察すると、幅10〜100nm、高さ0.2〜2μmの柱状晶の改質TiNの形成が観察される。
また、上記の改質TiNの柱状晶の幅及び高さは、上記蒸着条件のうちの、特に、蒸着時間によって影響を受けるが、30〜150minの蒸着によって、上記の幅、高さの柱状晶の改質TiNが形成される。
なお、改質TiN層の層厚0.2〜2μmは、ここでいう柱状晶の高さ0.2〜2μmに対応するものである。
ここで、改質TiN層の層厚(柱状晶の高さ)が0.2μm未満では、所望の密着強度を確保するのに不十分であり、一方その層厚(柱状晶の高さ)が2μmを越えると、柱状晶が粗大化し表面平滑性が失われ、耐欠損性が低下するようになることから、改質TiN層の層厚(柱状晶の高さ)を0.2〜2μmと定めた。
When depositing a TiN layer on a WC cemented carbide substrate, ion plating using a pressure gradient type Ar plasma gun shown in FIG.
WC carbide substrate temperature: 200 to 450 ° C.,
Plasma gun discharge power: 3 kW,
Discharge gas flow rate: Argon (Ar) gas 25-40 sccm,
DC bias voltage applied to the tool base: −500 V,
After performing the bombard process under the specific conditions
WC carbide substrate temperature: 200 to 450 ° C.,
Evaporation source: Metal Ti,
Plasma gun discharge power: 12 kW
Reaction gas flow rate: Nitrogen (N 2 ) gas 100 sccm,
Discharge gas flow rate: Argon (Ar) gas 45 sccm,
DC bias voltage applied to the tool base: 0 V,
Deposition time: 30-150 min,
When the modified TiN layer is deposited by adjusting to the specific condition,
In an arbitrary cross section perpendicular to the WC carbide substrate surface, the interface between the WC carbide substrate surface and the modified TiN layer adjacent thereto is
(A) The [0001] orientation of the tungsten carbide crystal grains and the [110] orientation of the TiN crystal grains are parallel, and the [10-10] orientation of the tungsten carbide crystal grains and the [001] orientation of the TiN crystal grains are parallel. the length occupied by the certain interface and X a,
(B) The [0001] orientation of the tungsten carbide crystal grains and the [111] orientation of the TiN crystal grains are parallel, and the [11-20] orientation of the tungsten carbide crystal grains and the [110] orientation of the TiN crystal grains are parallel. the length occupied by some interface when the X C,
1> (X A + X C ) /X≧0.3,
(Where X represents the total length of the interface), and an interface having a heteroepitaxial relationship is formed.
When the modified TiN layer is observed with a scanning electron microscope, formation of columnar crystal modified TiN having a width of 10 to 100 nm and a height of 0.2 to 2 μm is observed.
In addition, the width and height of the columnar crystals of the modified TiN are affected by the deposition time, in particular, the deposition time. However, the columnar crystals having the above width and height can be obtained by deposition for 30 to 150 minutes. The modified TiN is formed.
The layer thickness of 0.2 to 2 μm of the modified TiN layer corresponds to the columnar crystal height of 0.2 to 2 μm.
Here, if the layer thickness (columnar crystal height) of the modified TiN layer is less than 0.2 μm, it is insufficient to ensure the desired adhesion strength, while the layer thickness (columnar crystal height) is insufficient. If it exceeds 2 μm, the columnar crystals become coarse, the surface smoothness is lost, and the fracture resistance is lowered. Therefore, the layer thickness (columnar crystal height) of the modified TiN layer is 0.2-2 μm. Determined.
また、切削工具基体とTiN層との界面の断面におけるWC結晶粒とTiN結晶粒について、電界放出型走査電子顕微鏡と電子線後方散乱回折装置を用いて、以下の手順により、それぞれの結晶面配列、結晶方位配向、界面長さXA、界面長さXC、全界面長Xを求めた。
すなわち、切削工具基体とTiN層の断面をイオン研磨により研磨した後、研磨面表面のWC結晶粒とTiN結晶粒に電子線を照射し、個々のWC結晶粒とTiN結晶粒の領域を決定し、さらに、測定領域内の切削工具基体とTiN層の界面において隣接するWC結晶粒とTiN結晶粒の対について、
(a1)WC結晶粒の[10−10]方位とTiN結晶粒の[100]方位がなす角度、
(a2)WC結晶粒の[0001]方位とTiN結晶粒の[110]方位がなす角度、
(c1)WC結晶粒の[11−20]方位とTiN結晶粒の[110]方位がなす角度、
(c2)WC結晶粒の[0001]方位とTiN結晶粒の[111]方位がなす角度、
をそれぞれ測定した場合に、
(A)上記(a1)で求めた角度と上記(a2)で求めた角度がともに10度以下
となるWC結晶粒とTiN結晶粒の対
によって形成される特定界面領域の基体表面に沿った距離を測定し、上記(A)の条件を満たすWC結晶粒とTiN結晶粒の対すべてについて、該界面領域の長さを足した距離をXAとし、
さらに、
(C)上記(c1)で求めた角度と上記(c2)で求めた角度がともに10度以下
となるWC結晶粒とTiN結晶粒の対
によって形成される特定界面領域の基体表面に沿った距離を測定し、上記(C)の条件を満たすWC結晶粒とTiN結晶粒の対すべてについて、該界面領域の長さを足した距離をXCとし、
さらに、測定された工具基体とTiN層の界面において、工具基体表面に沿った全界面領域の長さをXとした。
上記測定で求めたXA、XC、Xの値に基づき算出すると、上記WC超硬基体表面とこれに隣接するTiN層の界面には、
1>(XA+XC)/X≧0.3、
を満足するヘテロエピタキシャル界面が形成されていることが確認される。
ここで、(XA+XC)/Xが0.3より小さいと、ヘテロエピタキシャル界面の占める割合が少なくなり、TiN層の破壊起点が増え、所望の耐欠損性が得られないことから、(XA+XC)/Xの値を1>(XA+XC)/X≧0.3と定めた。
In addition, the WC crystal grains and TiN crystal grains in the cross section of the interface between the cutting tool base and the TiN layer are arranged in the respective crystal planes by the following procedure using a field emission scanning electron microscope and an electron beam backscatter diffraction apparatus. , Crystal orientation orientation, interface length X A , interface length X C , and total interface length X were determined.
That is, after the cross section of the cutting tool base and the TiN layer is polished by ion polishing, the WC crystal grains and TiN crystal grains on the polished surface are irradiated with an electron beam to determine the regions of the individual WC crystal grains and TiN crystal grains. Furthermore, for a pair of WC grains and TiN grains adjacent to each other at the interface between the cutting tool base and the TiN layer in the measurement region,
(A1) An angle formed by the [10-10] orientation of the WC crystal grains and the [100] orientation of the TiN crystal grains,
(A2) An angle formed by the [0001] orientation of the WC crystal grain and the [110] orientation of the TiN crystal grain,
(C1) An angle formed by the [11-20] orientation of the WC crystal grain and the [110] orientation of the TiN crystal grain,
(C2) The angle formed by the [0001] orientation of the WC crystal grains and the [111] orientation of the TiN crystal grains,
When measuring each
(A) Distance along the substrate surface of a specific interface region formed by a pair of WC crystal grains and TiN crystal grains in which both the angle obtained in (a1) and the angle obtained in (a2) are 10 degrees or less , And for all pairs of WC crystal grains and TiN crystal grains satisfying the above condition (A), the distance obtained by adding the length of the interface region is X A ,
further,
(C) Distance along the substrate surface of a specific interface region formed by a pair of WC crystal grains and TiN crystal grains in which both the angle obtained in (c1) and the angle obtained in (c2) are 10 degrees or less , And for all pairs of WC crystal grains and TiN crystal grains satisfying the above condition (C), the distance obtained by adding the length of the interface region is X C ,
Furthermore, the length of the entire interface region along the tool substrate surface at the measured interface between the tool substrate and the TiN layer was X.
When calculated based on the values of X A , X C , and X determined by the above measurement, the interface between the WC carbide substrate surface and the TiN layer adjacent thereto is as follows:
1> (X A + X C ) /X≧0.3,
It is confirmed that a heteroepitaxial interface satisfying the above is formed.
Here, if (X A + X C ) / X is smaller than 0.3, the proportion of the heteroepitaxial interface decreases, the fracture starting point of the TiN layer increases, and the desired fracture resistance cannot be obtained. The value of X A + X C ) / X was determined as 1> (X A + X C ) /X≧0.3.
この発明の被覆工具は、WC超硬基体とこれに接するTiN層との界面に存在するWC結晶粒およびTiN結晶粒の結晶面および結晶方位が、特定のヘテロエピタキシャル関係を充足するようにTiN層が形成されていることにより、溶着チッピングの生じやすい小径低速切削加工、あるいは、切刃に対して高送り、高切込みによる高負荷が作用する高速重切削加工においても、すぐれた耐欠損性と耐剥離性を示し、長期の使用に亘ってすぐれた切削性能を発揮し、工具寿命の延命化に寄与するものである。 The coated tool of the present invention has a TiN layer so that the crystal planes and crystal orientations of the WC crystal grains and TiN crystal grains existing at the interface between the WC carbide substrate and the TiN layer in contact with the WC carbide substrate satisfy a specific heteroepitaxial relationship. This makes it possible to achieve excellent chipping resistance and resistance even in small-diameter, low-speed cutting processes where welding chipping is likely to occur, or in high-speed heavy cutting processes where high loads are applied to the cutting blade and high loads are applied. It exhibits releasability, exhibits excellent cutting performance over a long period of use, and contributes to prolonging the tool life.
つぎに、この発明の被覆工具を実施例により具体的に説明する。 Next, the coated tool of the present invention will be specifically described with reference to examples.
原料粉末として、いずれも1〜3μmの平均粒径を有するWC粉末、TiC粉末、VC粉末、TaC粉末、NbC粉末、Cr3 C2 粉末、およびCo粉末を用意し、これら原料粉末を、表1に示される配合組成に配合し、ボールミルで72時間湿式混合し、乾燥した後、100MPa の圧力で圧粉体にプレス成形し、この圧粉体を6Paの真空中、温度:1400℃に1時間保持の条件で焼結し、焼結後、切刃部分にR:0.03のホーニング加工を施してISO規格・CNMG120408のインサート形状をもったWC超硬基体A−1〜A−10を形成した。 As raw material powders, WC powder, TiC powder, VC powder, TaC powder, NbC powder, Cr 3 C 2 powder, and Co powder, all having an average particle diameter of 1 to 3 μm, were prepared. And then wet-mixed with a ball mill for 72 hours, dried, and press-molded into a green compact at a pressure of 100 MPa. The green compact was vacuumed at 6 Pa at a temperature of 1400 ° C. for 1 hour. Sintering is performed under the holding conditions, and after sintering, the cutting edge part is subjected to a honing process of R: 0.03 to form WC carbide substrates A-1 to A-10 having an ISO standard / CNMG120408 insert shape. did.
ついで、上記のWC超硬基体A−1〜A−10を、アセトン中で超音波洗浄し、乾燥した状態で、図1に示される圧力勾配型Arプラズマガンを利用したイオンプレーティング装置に装着し、蒸発源として、金属Tiを装着し、まず、装置内を排気して1.0×10−3Pa以下の真空に保持しながら、Arガスを導入して2.3×10−2Paとしたのち、圧力勾配型Arプラズマガンの放電電力を3kWとし、チャンバー内にプラズマビームを照射しArをイオン化させるとともに、WC超硬基体に−500Vのバイアス電圧を印加することによって、前記WC超硬基体を10分間Arボンバード処理し、ついで、装置内を一旦1×10−3Pa程度の真空にした後、圧力勾配型Arプラズマガンの放電電力を12kWとし、Arガスを45sccm,窒素ガスを100sccm流しながら、炉内の圧力を3×10−2〜6×10−2Paに保ち、蒸発源にプラズマビームを入射し金属Tiの蒸気を発生させるとともにプラズマビームでイオン化して、所定温度に保持したWC超硬基体表面に、表3に示される目標層厚の改質TiN層を硬質被覆層として蒸着形成することにより、本発明被覆工具としての本発明被覆インサート1〜10を製造した。
なお、表2に、本発明被覆インサート1〜10の改質TiN層の形成条件である圧力勾配型Arプラズマガンを利用したイオンプレーティングの各種条件を示す。
Next, the above WC carbide substrates A-1 to A-10 are ultrasonically cleaned in acetone and dried, and attached to the ion plating apparatus using the pressure gradient type Ar plasma gun shown in FIG. Then, metal Ti is attached as an evaporation source, and first, Ar gas is introduced to 2.3 × 10 −2 Pa while evacuating the apparatus and maintaining a vacuum of 1.0 × 10 −3 Pa or less. After that, the discharge power of the pressure gradient type Ar plasma gun is set to 3 kW, the plasma beam is irradiated into the chamber to ionize Ar, and a bias voltage of −500 V is applied to the WC carbide substrate to the hard substrate is Ar bombardment for 10 minutes, then, after once 1 × 10 -3 Pa vacuum of about in the apparatus, the discharge power of the pressure gradient type Ar plasma gun and 12 kW, Ar gas 45 sccm, while passing 100sccm of nitrogen gas, maintaining the pressure in the furnace to 3 × 10 -2 ~6 × 10 -2 Pa, and ionized in the plasma beam with to generate steam of the incident metal Ti plasma beam evaporation source Then, the present coated insert 1 to 10 of the present invention as a coated tool of the present invention is formed by vapor-depositing a modified TiN layer having a target layer thickness shown in Table 3 on the surface of the WC carbide substrate held at a predetermined temperature as a hard coating layer. 10 was produced.
Table 2 shows various conditions for ion plating using a pressure gradient type Ar plasma gun, which are conditions for forming the modified TiN layer of the coated inserts 1 to 10 of the present invention.
比較の目的で、上記のWC超硬基体A−1〜A−10を、アセトン中で超音波洗浄し、乾燥した状態で、通常のアークイオンプレーティング装置に装着し、カソード電極(蒸発源)として金属Tiを装着し、まず、装置内を排気して0.1Pa以下の真空に保持しながらヒーターで装置内を500℃に加熱した後、Arガスを導入して、0.7Paの雰囲気とすると共に、前記WC超硬基体に−200Vの直流バイアス電圧を印加し、前記WC超硬基体表面をArボンバード処理し、ついで装置内に反応ガスとして窒素ガスを導入して3Paの反応雰囲気とすると共に、前記WC超硬基体に−50Vの直流バイアス電圧を印加し、かつ前記金属Tiのカソード電極とアノード電極の間に120Aの電流を流してアーク放電させて、もって前記WC超硬基体の表面に、表4に示される目標層厚の従来TiN層を硬質被覆層として蒸着形成することにより、従来被覆工具としての従来被覆インサート1〜10をそれぞれ製造した。 For the purpose of comparison, the above WC carbide substrates A-1 to A-10 are ultrasonically cleaned in acetone and dried, and then mounted on a normal arc ion plating apparatus, and a cathode electrode (evaporation source) At first, the inside of the apparatus is exhausted and the inside of the apparatus is heated to 500 ° C. with a heater while maintaining a vacuum of 0.1 Pa or less, Ar gas is introduced, and an atmosphere of 0.7 Pa is obtained. At the same time, a DC bias voltage of −200 V is applied to the WC carbide substrate, the surface of the WC carbide substrate is treated with Ar bombardment, and then nitrogen gas is introduced into the apparatus as a reaction gas to obtain a reaction atmosphere of 3 Pa. In addition, a -50V DC bias voltage is applied to the WC carbide substrate, and a current of 120 A is applied between the cathode electrode and the anode electrode of the metal Ti to cause arc discharge. On the surface of the C carbide substrate by depositing form a conventional TiN layer of the target layer thicknesses shown in Table 4 as a hard layer, and the conventional coated inserts 10 as a conventional coated tools produced respectively.
参考のため、上記のWC超硬基体A−1〜A−5について、これを、アセトン中で超音波洗浄し、乾燥した後、WC超硬基体A−1〜A−5を通常の化学蒸着(CVD)装置内に装着し、
反応ガス組成:容量%で、TiCl4:4.2%、N2:30%、H2:残り、
反応雰囲気温度:900℃、
反応雰囲気圧力:30kPa、
の条件で、CVD法によるTiN層(以下、化学蒸着TiN層で示す)を表5に示される目標層厚で蒸着形成することにより、参考被覆工具としての参考被覆インサート1〜5を製造した。
For reference, the above WC carbide substrates A-1 to A-5 were ultrasonically cleaned in acetone and dried, and then the WC carbide substrates A-1 to A-5 were subjected to normal chemical vapor deposition. (CVD) installed in the device,
Reaction gas composition: volume%, TiCl 4 : 4.2%, N 2 : 30%, H 2 : remaining,
Reaction atmosphere temperature: 900 ° C.
Reaction atmosphere pressure: 30 kPa,
Under these conditions, TiN layers by CVD (hereinafter referred to as chemical vapor deposition TiN layers) were vapor-deposited with the target layer thicknesses shown in Table 5 to produce reference coating inserts 1 to 5 as reference coating tools.
上記本発明被覆インサート1〜10の改質TiN層、従来被覆インサート1〜10の従来TiN層および参考被覆ドリル1〜5の化学蒸着TiN層について、その層厚、柱状晶のサイズを走査型電子顕微鏡(Carl Zeiss社製 Ultra55)を用いて、膜の破断面を観察することにより測定した。なお、この測定は5点測定の平均値である。
表3〜5に、それぞれの測定値を示した。
Regarding the modified TiN layer of the present invention coated inserts 1 to 10, the conventional TiN layer of the conventional coated inserts 1 to 10 and the chemical vapor deposited TiN layer of the reference coated drills 1 to 5, the layer thickness and the size of the columnar crystals are determined by scanning electron. It measured by observing the torn surface of a film | membrane using the microscope (Carl Zeiss Ultra55). This measurement is an average value of five-point measurement.
Each measured value was shown to Tables 3-5.
さらに、上記本発明被覆インサート1〜10のWC超硬基体と改質TiN層との界面近傍、従来被覆インサート1〜10のWC超硬基体と従来TiN層との界面近傍、および、参考被覆インサート1〜5のWC超硬基体と化学蒸着TiN層との界面近傍における、WC結晶粒とTiN結晶粒の結晶面配列、結晶方位配向を電界放出型走査電子顕微鏡と電子線後方散乱回折装置を用いて測定した。
図2に、一例として、本発明被覆インサート1についての、超硬基体と改質TiN層との界面近傍における、WC結晶粒とTiN結晶粒の結晶面配列、結晶方位配向を表す模式図を示す。
なお、測定領域は、具体的には、界面を中心とし、界面と平行に幅30μm、高さ3μmの領域である。
また、具体的な測定手順は、次のとおりである。
すなわち、切削工具基体とTiN層の断面をイオン研磨により研磨した後、研磨面表面のWC結晶粒とTiN結晶粒に電子線を照射し、個々のWC結晶粒とTiN結晶粒の領域を決定し、さらに、測定領域内の切削工具基体とTiN層の界面において隣接するWC結晶粒とTiN結晶粒の対について、
(a1)WC結晶粒の[10−10]方位とTiN結晶粒の[100]方位がなす角度、
(a2)WC結晶粒の[0001]方位とTiN結晶粒の[110]方位がなす角度、
(c1)WC結晶粒の[11−20]方位とTiN結晶粒の[110]方位がなす角度、
(c2)WC結晶粒の[0001]方位とTiN結晶粒の[111]方位がなす角度、
をそれぞれ測定した場合に、
(A)上記(a1)で求めた角度と上記(a2)で求めた角度がともに10度以下
となるWC結晶粒とTiN結晶粒の対
によって形成される特定界面領域の基体表面に沿った距離を測定し、上記(A)の条件を満たすWC結晶粒とTiN結晶粒の対すべてについて、該界面領域の長さを足した距離をXAとし、
さらに、
(C)上記(c1)で求めた角度と上記(c2)で求めた角度がともに10度以下
となるWC結晶粒とTiN結晶粒の対
によって形成される特定界面領域の基体表面に沿った距離を測定し、上記(C)の条件を満たすWC結晶粒とTiN結晶粒の対すべてについて、該界面領域の長さを足した距離をXCとし、
さらに、測定された工具基体とTiN層の界面において、工具基体表面に沿った全界面領域の長さをXとした。
上記測定により求めた、
炭化タングステン結晶粒の[0001]方位とTiN結晶粒の[110]方位が平行で、かつ、炭化タングステン結晶粒の[10−10]方位とTiN結晶粒の[001]方位が平行である界面の占める長さXA、
炭化タングステン結晶粒の[0001]方位とTiN結晶粒の[111]方位が平行で、かつ、炭化タングステン結晶粒の[11−20]方位とTiN結晶粒の[110]方位が平行である界面の占める長さXC、
の値から、
(XA+XC)/Xの値(但し、Xは、界面の全長)
の値を算出した。
これらの値をそれぞれ表3〜表5に示す。
Further, the vicinity of the interface between the WC carbide substrate of the present invention coated inserts 1 to 10 and the modified TiN layer, the vicinity of the interface between the WC carbide substrate of the conventional coated inserts 1 to 10 and the conventional TiN layer, and the reference coated insert Using a field emission scanning electron microscope and an electron beam backscatter diffractometer, the crystal plane arrangement and crystal orientation of WC crystal grains and TiN crystal grains in the vicinity of the interface between 1 to 5 WC carbide substrate and chemical vapor deposition TiN layer Measured.
FIG. 2 shows, as an example, a schematic diagram showing the crystal plane arrangement and crystal orientation of WC crystal grains and TiN crystal grains in the vicinity of the interface between the cemented carbide substrate and the modified TiN layer for the coated insert 1 of the present invention. .
The measurement region is specifically a region having a width of 30 μm and a height of 3 μm parallel to the interface centered on the interface.
The specific measurement procedure is as follows.
That is, after the cross section of the cutting tool base and the TiN layer is polished by ion polishing, the WC crystal grains and TiN crystal grains on the polished surface are irradiated with an electron beam to determine the regions of the individual WC crystal grains and TiN crystal grains. Furthermore, for a pair of WC grains and TiN grains adjacent to each other at the interface between the cutting tool base and the TiN layer in the measurement region,
(A1) An angle formed by the [10-10] orientation of the WC crystal grains and the [100] orientation of the TiN crystal grains,
(A2) An angle formed by the [0001] orientation of the WC crystal grain and the [110] orientation of the TiN crystal grain,
(C1) An angle formed by the [11-20] orientation of the WC crystal grain and the [110] orientation of the TiN crystal grain,
(C2) The angle formed by the [0001] orientation of the WC crystal grains and the [111] orientation of the TiN crystal grains,
When measuring each
(A) Distance along the substrate surface of a specific interface region formed by a pair of WC crystal grains and TiN crystal grains in which both the angle obtained in (a1) and the angle obtained in (a2) are 10 degrees or less , And for all pairs of WC crystal grains and TiN crystal grains satisfying the above condition (A), the distance obtained by adding the length of the interface region is X A ,
further,
(C) Distance along the substrate surface of a specific interface region formed by a pair of WC crystal grains and TiN crystal grains in which both the angle obtained in (c1) and the angle obtained in (c2) are 10 degrees or less , And for all pairs of WC crystal grains and TiN crystal grains satisfying the above condition (C), the distance obtained by adding the length of the interface region is X C ,
Furthermore, the length of the entire interface region along the tool substrate surface at the measured interface between the tool substrate and the TiN layer was X.
Obtained by the above measurement,
The [0001] orientation of the tungsten carbide crystal grains and the [110] orientation of the TiN crystal grains are parallel, and the [10-10] orientation of the tungsten carbide crystal grains and the [001] orientation of the TiN crystal grains are parallel. Occupied length X A ,
The [0001] orientation of the tungsten carbide crystal grains and the [111] orientation of the TiN crystal grains are parallel, and the [11-20] orientation of the tungsten carbide crystal grains and the [110] orientation of the TiN crystal grains are parallel. Occupied length X C ,
From the value of
Value of (X A + X C ) / X (where X is the total length of the interface)
The value of was calculated.
These values are shown in Tables 3 to 5, respectively.
表3から、本発明被覆インサート1〜10の改質TiN層は、幅10〜100nm、高さ0.2〜2μmの柱状晶を有し、さらに、WC超硬基体と改質TiN層間には、
1>(XA+XC)/X≧0.3、
を満足するヘテロエピタキシャル界面が形成されていることがわかる。
これに対して、表4から、従来被覆インサート1〜10の従来TiN層は、幅100〜500nm、高さ0.2〜2.0μmの柱状晶を有するが、WC超硬基体と従来TiN層間には、
1>(XA+XC)/X≧0.3、
を満足するヘテロエピタキシャル界面は形成されておらず、付着強度が不十分であることがわかる。
また、同じく表5から、参考被覆インサート1〜4の化学蒸着TiN層にも、
1>(XA+XC)/X≧0.3、
を満足するヘテロエピタキシャル界面は形成されておらず、付着強度が不十分であることがわかる。
From Table 3, the modified TiN layers of the coated inserts 1 to 10 of the present invention have columnar crystals with a width of 10 to 100 nm and a height of 0.2 to 2 μm, and between the WC carbide substrate and the modified TiN layer. ,
1> (X A + X C ) /X≧0.3,
It can be seen that a heteroepitaxial interface satisfying the above is formed.
On the other hand, from Table 4, the conventional TiN layers of the conventional coated inserts 1 to 10 have columnar crystals with a width of 100 to 500 nm and a height of 0.2 to 2.0 μm, but the WC carbide substrate and the conventional TiN interlayer Is
1> (X A + X C ) /X≧0.3,
It can be seen that the heteroepitaxial interface satisfying the above is not formed, and the adhesion strength is insufficient.
Also from Table 5, the chemical vapor deposition TiN layers of the reference coating inserts 1 to 4
1> (X A + X C ) /X≧0.3,
It can be seen that the heteroepitaxial interface satisfying the above is not formed, and the adhesion strength is insufficient.
つぎに、上記本発明被覆インサート1〜10、従来被覆インサート1〜10および参考被覆インサート1〜5について、これを工具鋼製バイトの先端部に固定治具にてネジ止めした状態で、溶着チッピングの生じやすい小径部品加工を想定した以下の条件の旋削加工試験を行った。
被削材:JIS・S10Cの丸棒、
切削速度: 80 m/min.、
切り込み: 2 mm、
送り: 0.1 mm/rev.、
切削時間: 60 分、
の条件での炭素鋼の乾式低速連続切削加工試験(通常の切削速度および送りは、それぞれ、250m/min.および0.6mm/rev.)、
を行い、切刃の逃げ面摩耗幅を測定した。
上記切削加工試験の測定結果を表6に示した。
Next, the above-mentioned coated inserts 1 to 10, the conventional coated inserts 1 to 10 and the reference coated inserts 1 to 5 are welded and chipped in a state where they are screwed to the tip of a tool steel tool with a fixing jig. A turning test was conducted under the following conditions assuming small diameter part machining that is likely to occur.
Work material: JIS / S10C round bar,
Cutting speed: 80 m / min. ,
Incision: 2 mm,
Feed: 0.1 mm / rev. ,
Cutting time: 60 minutes,
Carbon steel dry low-speed continuous cutting test under the following conditions (normal cutting speed and feed are 250 m / min. And 0.6 mm / rev., Respectively),
The flank wear width of the cutting blade was measured.
Table 6 shows the measurement results of the cutting test.
表3〜6に示される結果から、本発明被覆インサート1〜10は、改質TiN層が幅10〜100nm、高さ0.2〜2μmの柱状晶で構成され、さらに、電界放出型走査電子顕微鏡と電子線後方散乱回折装置により、結晶面配列、結晶方位配向を測定した場合、WC超硬基体と改質TiN層との界面には、特定のヘテロエピタキシャル界面が形成されており、その結果、すぐれた密着強度を備えることから、溶着チッピングの生じやすい小径低速切削加工条件下において、優れた耐欠損性、耐剥離性を示し、長期の使用に亘って優れた切削性能を発揮するとともに、工具寿命の延命化が図られる。
これに対して、従来被覆インサート1〜10および参考被覆インサート1〜5においては、特定のヘテロエピタキシャル界面の形成が十分でないため、溶着チッピングの生じやすい小径または小型部品の低速加工条件下では欠損、剥離等により、比較的短時間で使用寿命に至ることが明らかである。
From the results shown in Tables 3 to 6, in the coated inserts 1 to 10 of the present invention, the modified TiN layer is composed of columnar crystals having a width of 10 to 100 nm and a height of 0.2 to 2 μm, and further, field emission type scanning electrons When the crystal plane alignment and crystal orientation are measured with a microscope and an electron beam backscatter diffractometer, a specific heteroepitaxial interface is formed at the interface between the WC carbide substrate and the modified TiN layer. Since it has excellent adhesion strength, it exhibits excellent chipping resistance and peeling resistance under small-diameter low-speed cutting conditions where welding chipping is likely to occur, and exhibits excellent cutting performance over a long period of use. The tool life can be extended.
On the other hand, in the conventional coated inserts 1 to 10 and the reference coated inserts 1 to 5, since the formation of a specific heteroepitaxial interface is not sufficient, a defect occurs under low-speed machining conditions of small diameter or small parts that are likely to cause welding chipping. It is clear that the service life is reached in a relatively short time due to peeling or the like.
原料粉末として、平均粒径0.2μmのWC粉末、同2.3μmのCr3C2粉末、同1.5μmのVC粉末および同1.8μmのCo粉末を用意し、これら原料粉末をそれぞれ表7に示される配合組成に配合し、さらにワックスを加えてアセトン中で24時間ボールミル混合し、減圧乾燥した後、100MPaの圧力で所定形状の各種の圧粉体にプレス成形し、これらの圧粉体を、6Paの真空雰囲気中、7℃/分の昇温速度で1370〜1470℃の範囲内の所定の温度に昇温し、この温度に1時間保持後、炉冷の条件で焼結して、工具基体形成用丸棒焼結体を形成し、この丸棒焼結体から、研削加工にて、溝形成部の直径×長さが6mm×81mmの寸法並びにねじれ角30度の2枚刃形状をもったWC超硬基体(ドリル)D−1〜D−4を製造した。 As raw material powders, WC powder having an average particle size of 0.2 μm, 2.3 μm Cr 3 C 2 powder, 1.5 μm VC powder, and 1.8 μm Co powder were prepared. 7 and added to wax, ball mill mixed in acetone for 24 hours, dried under reduced pressure, press-molded into various compacts of a predetermined shape at a pressure of 100 MPa, and these compacts The body is heated to a predetermined temperature in the range of 1370 to 1470 ° C. at a heating rate of 7 ° C./min in a vacuum atmosphere of 6 Pa, held at this temperature for 1 hour, and then sintered under furnace cooling conditions. Then, a tool bar forming round bar sintered body is formed, and from this round bar sintered body, a groove forming portion diameter × length of 6 mm × 81 mm and a twist angle of 30 degrees are obtained by grinding. WC carbide substrate (drill) D-1 to D- with blade shape It was prepared.
ついで、上記のWC超硬基体D−1〜D−4を、アセトン中で超音波洗浄し、乾燥した状態で、図1に示される圧力勾配型Arプラズマガンを利用したイオンプレーティング装置に装着し、実施例1と同様な方法で、表8に示される目標層厚の改質TiN層を硬質被覆層として蒸着形成することにより、本発明被覆工具としての本発明被覆表面被覆ドリル(以下、本発明被覆ドリルという)1〜8を製造した。 Next, the above WC carbide substrates D-1 to D-4 are ultrasonically cleaned in acetone and dried, and attached to the ion plating apparatus using the pressure gradient type Ar plasma gun shown in FIG. Then, in the same manner as in Example 1, the modified TiN layer having the target layer thickness shown in Table 8 is formed by vapor deposition as a hard coating layer. 1-8) (referred to as the present invention coated drill).
比較の目的で、上記のWC超硬基体D−1〜D−4を、アセトン中で超音波洗浄し、乾燥した状態で、通常のアークイオンプレーティング装置に装着し、実施例1と同様な方法で、表9に示される目標層厚の従来TiN層を硬質被覆層として蒸着形成することにより、従来被覆工具としての従来被覆ドリル1〜8を製造した。 For the purpose of comparison, the above WC carbide substrates D-1 to D-4 were ultrasonically cleaned in acetone and dried, and then mounted on a normal arc ion plating apparatus. Conventionally coated drills 1 to 8 as conventional coated tools were produced by vapor deposition of conventional TiN layers having target layer thicknesses shown in Table 9 as hard coating layers.
参考のため、上記のWC超硬基体D−1〜D−4を、アセトン中で超音波洗浄し、乾燥した後、WC超硬基体D−1〜D−4を通常の化学蒸着(CVD)装置内に装着し、実施例1と同様な方法で、CVD法による化学蒸着TiN層を蒸着形成することにより、表10に示される目標層厚の化学蒸着TiN層からなる硬質被覆層を備えた参考被覆工具としての参考被覆ドリル1〜4を製造した。 For reference, the WC carbide substrates D-1 to D-4 are ultrasonically cleaned in acetone and dried, and then the WC carbide substrates D-1 to D-4 are subjected to normal chemical vapor deposition (CVD). A hard coating layer comprising a chemical vapor deposition TiN layer having a target layer thickness shown in Table 10 was prepared by depositing the chemical vapor deposition TiN layer by a CVD method in the same manner as in Example 1 and mounting in the apparatus. Reference coated drills 1 to 4 as reference coated tools were manufactured.
上記本発明被覆ドリル1〜8の改質TiN層、従来被覆ドリル1〜8の従来TiN層および参考被覆ドリル1〜4の化学蒸着TiN層について、その層厚、柱状晶のサイズを、実施例1と同様にして測定した。
表8〜10に、それぞれの測定値を示した。
About the modified TiN layer of the present invention coated drills 1-8, the conventional TiN layer of the conventional coated drills 1-8, and the chemical vapor deposited TiN layer of the reference coated drills 1-4, the layer thickness, the size of the columnar crystals, Measurement was performed in the same manner as in 1.
Each measured value was shown to Tables 8-10.
さらに、上記本発明被覆ドリル1〜8のWC超硬基体と改質TiN層との界面近傍、従来被覆ドリル1〜8のWC超硬基体と従来TiN層との界面近傍、および、参考被覆ドリル1〜4のWC超硬基体と化学蒸着TiN層との界面近傍における、WC結晶粒とTiN結晶粒の結晶面配列、結晶方位配向についても、実施例1と同様にして、電界放出型走査電子顕微鏡と電子線後方散乱回折装置を用いてXA,XC,Xを測定し、(XA+XC)/Xの値を求めた。
これらの値をそれぞれ表8〜表10に示す。
Furthermore, the vicinity of the interface between the WC carbide substrate of the present invention coated drills 1 to 8 and the modified TiN layer, the vicinity of the interface between the WC carbide substrate of the conventional coated drills 1 to 8 and the conventional TiN layer, and a reference coated drill In the same manner as in Example 1, field emission type scanning electrons are also used for the crystal plane arrangement and crystal orientation of WC crystal grains and TiN crystal grains in the vicinity of the interface between 1-4 WC carbide substrates and chemical vapor deposition TiN layers. X A , X C , and X were measured using a microscope and an electron beam backscatter diffractometer, and the value of (X A + X C ) / X was determined.
These values are shown in Tables 8 to 10, respectively.
表8から、本発明被覆ドリル1〜8の改質TiN層は、幅10〜100nm、高さ0.2〜2μmの柱状晶を有し、さらに、WC超硬基体と改質TiN層間には、
1>(XA+XC)/X≧0.3、
を満足するヘテロエピタキシャル界面が形成されていることがわかる。
これに対して、表9から、従来被覆ドリル1〜8の従来TiN層は、幅100〜500nm、高さ0.2〜2.0μmの柱状晶を有するが、WC超硬基体と従来TiN層間には、
1>(XA+XC)/X≧0.3、
を満足するヘテロエピタキシャル界面は形成されておらず、付着強度が不十分であることがわかる。
また、同じく表10から、参考被覆ドリル1〜4の化学蒸着TiN層にも、
1>(XA+XC)/X≧0.3、
を満足するヘテロエピタキシャル界面は形成されておらず、付着強度が不十分であることがわかる。
From Table 8, the modified TiN layers of the present invention coated drills 1 to 8 have columnar crystals with a width of 10 to 100 nm and a height of 0.2 to 2 μm, and between the WC carbide substrate and the modified TiN layer. ,
1> (X A + X C ) /X≧0.3,
It can be seen that a heteroepitaxial interface satisfying the above is formed.
On the other hand, from Table 9, the conventional TiN layers of the conventional coated drills 1 to 8 have columnar crystals with a width of 100 to 500 nm and a height of 0.2 to 2.0 μm. Is
1> (X A + X C ) /X≧0.3,
It can be seen that the heteroepitaxial interface satisfying the above is not formed, and the adhesion strength is insufficient.
Similarly, from Table 10, the chemical vapor deposition TiN layers of the reference coated drills 1 to 4,
1> (X A + X C ) /X≧0.3,
It can be seen that the heteroepitaxial interface satisfying the above is not formed, and the adhesion strength is insufficient.
つぎに、上記本発明被覆ドリル1〜8、従来被覆ドリル1〜8および参考被覆ドリル1〜4について、
被削材−平面寸法:100mm×250mm、厚さ:50mmの、JIS・SS400の板材、
切削速度: 150 m/min.、
送り: 0.40 mm/rev、
穴深さ: 10 mm、
の条件での軟鋼の湿式高速穴あけ切削加工試験(通常の切削速度および送りは、それぞれ、85m/min.および0.20mm/rev)、
を行い(水溶性切削油使用)、先端切刃面の逃げ面摩耗幅が0.3mmに至るまでの穴あけ加工数を測定した。
この測定結果を表11にそれぞれ示した。
Next, about the said invention coated drills 1-8, the conventional coated drills 1-8, and the reference coated drills 1-4,
Work material-planar dimensions: 100 mm × 250 mm, thickness: 50 mm, JIS / SS400 plate material,
Cutting speed: 150 m / min. ,
Feed: 0.40 mm / rev,
Hole depth: 10 mm,
Wet high-speed drilling test of mild steel under the following conditions (normal cutting speed and feed are 85 m / min. And 0.20 mm / rev, respectively)
(Using water-soluble cutting oil), and the number of drilling operations was measured until the flank wear width of the cutting edge surface reached 0.3 mm.
The measurement results are shown in Table 11, respectively.
表3、6、8、11に示される結果から、本発明被覆インサート1〜10、本発明被覆ドリル1〜8は、改質TiN層が幅10〜100nm、高さ0.2〜2μmの柱状晶で構成され、さらに、電界放出型走査電子顕微鏡と電子線後方散乱回折装置により、結晶面配列、結晶方位配向を測定した場合、WC超硬基体と改質TiN層との界面には、特定のヘテロエピタキシャル界面が形成されており、その結果、すぐれた密着強度を備えることから、溶着チッピングの生じやすい小径低速切削加工条件下、あるいは、高速重切削加工条件下においても、優れた耐欠損性、耐剥離性を示し、長期の使用に亘って優れた切削性能を発揮するとともに、工具寿命の延命化が図られる。
これに対して、表4〜6、9〜11に示される結果から、従来被覆インサート1〜10、参考被覆インサート1〜5、および、従来被覆ドリル1〜8、参考被覆ドリル1〜4においては、特定のヘテロエピタキシャル界面の形成が十分でないため、溶着チッピングの生じやすい小径低速切削加工条件下、あるいは、高速重切削加工条件下においては、欠損、剥離等により、比較的短時間で使用寿命に至ることが明らかである。
From the results shown in Tables 3, 6, 8, and 11, the coated inserts 1 to 10 and the coated drills 1 to 8 of the present invention are columnar with a modified TiN layer having a width of 10 to 100 nm and a height of 0.2 to 2 μm. In addition, when the crystal plane alignment and crystal orientation are measured with a field emission scanning electron microscope and an electron beam backscatter diffraction device, the interface between the WC carbide substrate and the modified TiN layer is specified. As a result, it has excellent adhesion strength, so it has excellent fracture resistance even under conditions of small diameter low-speed cutting or high-speed heavy cutting, where welding chipping is likely to occur. It exhibits peeling resistance, exhibits excellent cutting performance over a long period of use, and extends the tool life.
On the other hand, from the results shown in Tables 4-6 and 9-11, in the conventional coated inserts 1-10, the reference coated inserts 1-5, the conventional coated drills 1-8, and the reference coated drills 1-4 Because the formation of a specific heteroepitaxial interface is not sufficient, the service life is shortened in a relatively short time due to defects, delamination, etc. under small diameter low speed cutting conditions or high speed heavy cutting conditions where welding chipping is likely to occur. It is clear that
上述のように、この発明の被覆工具は、WC超硬基体とこれに隣接して形成される改質TiN層間での密着強度が高いため、溶着チッピングの生じやすい小径低速切削加工、あるいは、切刃に対して高負荷が作用する高速重切削加工に用いられた場合に、すぐれた耐欠損性、耐剥離性を示すものであって、被覆インサート、被覆ドリル等の各種被覆工具として用いることができ、そして、これによって、硬質被覆層の欠損、剥離の発生を防止し得ることから、低コスト化に十分満足に対応できるとともに、すぐれた切削性能を長期に亘って発揮し、工具寿命の延命化を図ることができるものである。 As described above, the coated tool of the present invention has a high adhesion strength between the WC cemented carbide substrate and the modified TiN layer formed adjacent to the WC cemented carbide substrate. When used in high-speed heavy cutting where a high load acts on the blade, it exhibits excellent fracture resistance and peeling resistance, and can be used as various coated tools such as coated inserts and coated drills. This can prevent the occurrence of chipping and delamination of the hard coating layer, so that it is possible to respond satisfactorily to cost reductions, exhibit excellent cutting performance over a long period of time, and extend the tool life. Can be realized.
Claims (1)
上記切削工具基体の表面に隣接して、0.2〜2μmの層厚を有し、幅10〜100nmの柱状晶組織からなるTiN層が形成され、
さらに、上記切削工具基体とTiN層との界面の断面における炭化タングステン結晶粒とTiN結晶粒について、電界放出型走査電子顕微鏡と電子線後方散乱回折装置を用いて、それぞれの結晶面と結晶方位を求め、
(a)炭化タングステン結晶粒の[0001]方位とTiN結晶粒の[110]方位が平行で、かつ、炭化タングステン結晶粒の[10−10]方位とTiN結晶粒の[001]方位が平行である界面の占める長さをXAとし、
(b)炭化タングステン結晶粒の[0001]方位とTiN結晶粒の[111]方位が平行で、かつ、炭化タングステン結晶粒の[11−20]方位とTiN結晶粒の[110]方位が平行である界面の占める長さをXCとした場合に、
上記切削工具基体表面とこれに隣接するTiN層の界面には、
1>(XA+XC)/X≧0.3、
を満足する(但し、Xは、界面の全長を表す)ヘテロエピタキシャル界面が形成されていることを特徴とする表面被覆切削工具。 A surface-coated cutting tool in which a hard coating layer containing at least a TiN layer is formed by physical vapor deposition on the surface of a cutting tool base made of a tungsten carbide-based cemented carbide,
Adjacent to the surface of the cutting tool base, a TiN layer having a layer thickness of 0.2 to 2 μm and a columnar crystal structure with a width of 10 to 100 nm is formed,
Further, with respect to the tungsten carbide crystal grains and TiN crystal grains in the cross section of the interface between the cutting tool base and the TiN layer, the respective crystal planes and crystal orientations are changed by using a field emission scanning electron microscope and an electron beam backscatter diffraction apparatus. Seeking
(A) The [0001] orientation of the tungsten carbide crystal grains and the [110] orientation of the TiN crystal grains are parallel, and the [10-10] orientation of the tungsten carbide crystal grains and the [001] orientation of the TiN crystal grains are parallel. the length occupied by the certain interface and X a,
(B) The [0001] orientation of the tungsten carbide crystal grains and the [111] orientation of the TiN crystal grains are parallel, and the [11-20] orientation of the tungsten carbide crystal grains and the [110] orientation of the TiN crystal grains are parallel. the length occupied by some interface when the X C,
At the interface between the cutting tool substrate surface and the TiN layer adjacent thereto,
1> (X A + X C ) /X≧0.3,
A surface-coated cutting tool characterized in that a heteroepitaxial interface is formed (where X represents the total length of the interface).
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JP2011218543A (en) * | 2009-12-25 | 2011-11-04 | Mitsubishi Materials Corp | Surface-coated cutting tool having hard coating layer exhibiting superior chipping resistance |
JP2013244548A (en) * | 2012-05-24 | 2013-12-09 | Sumitomo Electric Hardmetal Corp | Surface-coated cutting tool |
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JP2004188502A (en) * | 2002-06-28 | 2004-07-08 | Mitsubishi Materials Corp | Cutting tool of surface-coated cermet with hard coating layer having excellent thermal shock resistance |
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JPH09170067A (en) * | 1995-12-18 | 1997-06-30 | Toshiba Tungaloy Co Ltd | High strength coated member having consistency interface |
JP2000234172A (en) * | 1998-12-09 | 2000-08-29 | Seco Tools Ab | Coated cemented carbide body and method for cutting cast iron using it |
JP2004188502A (en) * | 2002-06-28 | 2004-07-08 | Mitsubishi Materials Corp | Cutting tool of surface-coated cermet with hard coating layer having excellent thermal shock resistance |
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JP2011218543A (en) * | 2009-12-25 | 2011-11-04 | Mitsubishi Materials Corp | Surface-coated cutting tool having hard coating layer exhibiting superior chipping resistance |
JP2013244548A (en) * | 2012-05-24 | 2013-12-09 | Sumitomo Electric Hardmetal Corp | Surface-coated cutting tool |
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