JP2010532582A - 誘電性ビルドアップ層のレーザ支援エッチングを用いて、パターン化された埋込み導電層を提供する方法 - Google Patents
誘電性ビルドアップ層のレーザ支援エッチングを用いて、パターン化された埋込み導電層を提供する方法 Download PDFInfo
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- JP2010532582A JP2010532582A JP2010515065A JP2010515065A JP2010532582A JP 2010532582 A JP2010532582 A JP 2010532582A JP 2010515065 A JP2010515065 A JP 2010515065A JP 2010515065 A JP2010515065 A JP 2010515065A JP 2010532582 A JP2010532582 A JP 2010532582A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000005530 etching Methods 0.000 title claims description 5
- 230000001678 irradiating effect Effects 0.000 claims abstract description 11
- 239000011810 insulating material Substances 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 239000003365 glass fiber Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
- G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
- H05K3/0035—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material of blind holes, i.e. having a metal layer at the bottom
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/465—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer having channels for the next circuit layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0796—Oxidant in aqueous solution, e.g. permanganate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Laser Beam Processing (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
Claims (20)
- パターン化された導電層を提供する方法において、
絶縁材料を含むビルドアップ層を提供する段階と、
提供される前記パターン化された導電層の予め定められたパターンに従って、前記ビルドアップ層の選択部分をレーザ照射する段階であって、前記レーザ照射する段階は、前記予め定められたパターンに従って、前記ビルドアップ層に予め定められたレーザで弱められた部分を生成するために、前記絶縁材料における前記化学結合の少なくともいくらかの結合エネルギよりも高い光子エネルギを有するレーザ・ビームを使用する段階を含む、段階と、
前記予め定められたパターンに従って凹部を形成するために、前記ビルドアップ層の前記レーザで弱められた部分を除去する段階と、
前記パターン化された導電層を形成するために、導電材料で前記凹部を充填する段階と、
から構成されることを特徴とする方法。 - 前記レーザ照射する段階は、約2.00eVと約7.00eVとの間の光子エネルギを有するレーザ源を使用する段階を含むことを特徴とする請求項1記載の方法。
- 前記レーザ照射する段階は、平均レーザ・フルエンスが約0.5J/cm2に等しいか、または小さいレーザ源を使用する段階を含むことを特徴とする請求項1記載の方法。
- 前記レーザ照射する段階は、約150nmと約550nmとの間の波長を有するレーザ源を使用する段階を含むことを特徴とする請求項1記載の方法。
- 前記レーザ照射する段階は、約532nmおよび約355nmの波長をそれぞれ有する、第2および第3高調波Nd:YAGレーザ装置またはバナデート・レーザ装置を使用する段階を含むことを特徴とする請求項1記載の方法。
- 前記レーザ照射する段階は、約527nmおよび約351nmの波長をそれぞれ有する、第2および第3高調波Nd:YLFレーザ装置を使用する段階を含むことを特徴とする請求項1記載の方法。
- 前記レーザを照射する段階は、約354nmの波長を有するXeCIエキシマ・レーザ装置、または、約308nmの波長を有するXeFエキシマ・レーザ装置を使用する段階を含むことを特徴とする請求項1記載の方法。
- 前記絶縁材料および前記レーザ・ビームは、前記絶縁材料によって前記レーザ・ビームが予め定められた吸収深度を達成するために選択されることを特徴とする請求項1記載の方法。
- 前記パターン化された導電層の前記深度は、約5〜15ミクロンであることを特徴とする請求項8記載の方法。
- 前記レーザ照射する段階は、
前記ビルドアップ層上に接触マスクを提供する段階、および、
前記ビルドアップ層の選択された部分をレーザ照射するために、前記接触マスクを通して前記ビルドアップ層をレーザ照射する段階、
を含むことを特徴とする請求項1記載の方法。 - 前記レーザ照射する段階は、
前記ビルドアップ層上に投影マスクを提供する段階、および、
前記ビルドアップ層の前記選択された部分をレーザ照射するために前記投影マスクを通して前記ビルドアップ層をレーザ照射する段階、
を含むことを特徴とする請求項1記載の方法。 - レーザ照射する段階は、前記ビルドアップ層の前記選択部分をレーザ照射するために、レーザ・ダイレクト・イメージングを使用する段階を含むことを特徴とする請求項1記載の方法。
- 前記除去する段階は、前記レーザで弱められた部分をエッチングする段階を含むことを特徴とする請求項1記載の方法。
- 前記エッチングする段階は、過マンガン酸塩溶剤を使用する段階を含むことを特徴とする請求項12記載の方法。
- 前記充填する段階は、前記ビルドアップ層上および前記凹部内に無電解めっきされた導電性シード層を提供する段階、前記無電解めっきされた導電性シード層上に電解めっきされた導電層を提供する段階、および、前記電解めっきされた導電層を機械的に研磨する段階を含むことを特徴とする請求項1記載の方法。
- 前記ビルドアップ層は、エポキシ樹脂ベースの誘電材料、ガラス繊維強化ポリイミド、および、ビスマレイミド−トリアジン(BT)のうちの1つを含むことを特徴とする請求項1記載の方法。
- 前記ビルドアップ層は、ガラス繊維強化エポキシ樹脂を含むことを特徴とする請求項15記載の方法。
- 前記導電材料は、銅を含むことを特徴とする請求項1記載の方法。
- 前記パターン化された導電層は、導電性のメタライゼーション層を含むことを特徴とする請求項1記載の方法。
- 前記パターン化された導電層は、導電性のビアの層を含むことを特徴とする請求項1記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/771,428 US20090004403A1 (en) | 2007-06-29 | 2007-06-29 | Method of Providing Patterned Embedded Conducive Layer Using Laser Aided Etching of Dielectric Build-Up Layer |
US11/771,428 | 2007-06-29 | ||
PCT/US2008/068149 WO2009032390A2 (en) | 2007-06-29 | 2008-06-25 | Method of providing patterned embedded conducive layer using laser aided etching of dielectric build-up layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010532582A true JP2010532582A (ja) | 2010-10-07 |
JP5261484B2 JP5261484B2 (ja) | 2013-08-14 |
Family
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Family Applications (1)
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JP2010515065A Expired - Fee Related JP5261484B2 (ja) | 2007-06-29 | 2008-06-25 | 誘電性ビルドアップ層のレーザ支援エッチングを用いて、パターン化された埋込み導電層を提供する方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090004403A1 (ja) |
JP (1) | JP5261484B2 (ja) |
KR (1) | KR101481851B1 (ja) |
CN (1) | CN101689482B (ja) |
TW (1) | TWI363666B (ja) |
WO (1) | WO2009032390A2 (ja) |
Families Citing this family (11)
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KR102391793B1 (ko) * | 2014-10-03 | 2022-04-28 | 니혼 이타가라스 가부시키가이샤 | 관통 전극이 달린 유리 기판의 제조 방법 및 유리 기판 |
US10361121B2 (en) | 2016-05-13 | 2019-07-23 | Intel Corporation | Aluminum oxide for thermal management or adhesion |
CN108430150B (zh) * | 2017-02-13 | 2021-02-26 | 鹏鼎控股(深圳)股份有限公司 | 具有弹性线路的电路板及其制作方法 |
CN109659220A (zh) * | 2017-10-11 | 2019-04-19 | 中国科学院半导体研究所 | 激光辅助无掩膜高深宽比碳化硅深槽孔结构制备方法 |
TWI651991B (zh) * | 2018-03-02 | 2019-02-21 | 李俊豪 | 導電線路之製作方法 |
KR102596988B1 (ko) * | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
TWI726225B (zh) * | 2018-07-18 | 2021-05-01 | 李俊豪 | 生醫晶片製作方法 |
US20200078884A1 (en) * | 2018-09-07 | 2020-03-12 | Intel Corporation | Laser planarization with in-situ surface topography control and method of planarization |
CN109618487B (zh) * | 2019-01-22 | 2022-07-29 | 张雯蕾 | 带有内埋电路的立体基件及其制备方法 |
WO2020187713A1 (en) * | 2019-03-18 | 2020-09-24 | Asml Holding N.V. | Micromanipulator devices and metrology system |
CN113351999A (zh) * | 2021-05-31 | 2021-09-07 | 昆山大洋电路板有限公司 | 一种基于激光镭雕的成品板铜面无损伤改版再加工工艺 |
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US5173442A (en) * | 1990-07-23 | 1992-12-22 | Microelectronics And Computer Technology Corporation | Methods of forming channels and vias in insulating layers |
JPH0847790A (ja) * | 1994-06-02 | 1996-02-20 | Mitsubishi Electric Corp | 光加工装置及び方法 |
JP2001144410A (ja) * | 1999-11-17 | 2001-05-25 | Ibiden Co Ltd | プリント配線板及びプリント配線板の製造方法 |
WO2005034595A1 (ja) * | 2003-10-06 | 2005-04-14 | Shinko Electric Industries Co., Ltd. | 樹脂層へのビアホールの形成方法 |
WO2005092559A1 (en) * | 2004-03-04 | 2005-10-06 | Matsushita Electric Industrial Co., Ltd. | Method and precise laser nanomachining with uv ultrafast laser pulses |
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JP2003101188A (ja) * | 2001-09-26 | 2003-04-04 | Nitto Denko Corp | ビアホールの形成方法及びそれを用いたフレキシブル配線板とその製造方法 |
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-
2007
- 2007-06-29 US US11/771,428 patent/US20090004403A1/en not_active Abandoned
-
2008
- 2008-06-25 KR KR1020097027158A patent/KR101481851B1/ko active IP Right Grant
- 2008-06-25 CN CN2008800223093A patent/CN101689482B/zh not_active Expired - Fee Related
- 2008-06-25 JP JP2010515065A patent/JP5261484B2/ja not_active Expired - Fee Related
- 2008-06-25 WO PCT/US2008/068149 patent/WO2009032390A2/en active Application Filing
- 2008-06-27 TW TW097124231A patent/TWI363666B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US5173442A (en) * | 1990-07-23 | 1992-12-22 | Microelectronics And Computer Technology Corporation | Methods of forming channels and vias in insulating layers |
JPH0847790A (ja) * | 1994-06-02 | 1996-02-20 | Mitsubishi Electric Corp | 光加工装置及び方法 |
JP2001144410A (ja) * | 1999-11-17 | 2001-05-25 | Ibiden Co Ltd | プリント配線板及びプリント配線板の製造方法 |
WO2005034595A1 (ja) * | 2003-10-06 | 2005-04-14 | Shinko Electric Industries Co., Ltd. | 樹脂層へのビアホールの形成方法 |
WO2005092559A1 (en) * | 2004-03-04 | 2005-10-06 | Matsushita Electric Industrial Co., Ltd. | Method and precise laser nanomachining with uv ultrafast laser pulses |
Also Published As
Publication number | Publication date |
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US20090004403A1 (en) | 2009-01-01 |
KR101481851B1 (ko) | 2015-01-12 |
TWI363666B (en) | 2012-05-11 |
CN101689482A (zh) | 2010-03-31 |
JP5261484B2 (ja) | 2013-08-14 |
WO2009032390A3 (en) | 2009-09-24 |
TW200924896A (en) | 2009-06-16 |
WO2009032390A2 (en) | 2009-03-12 |
CN101689482B (zh) | 2012-08-22 |
KR20100037051A (ko) | 2010-04-08 |
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