JP2010509751A - 混合光を放射するための装置 - Google Patents
混合光を放射するための装置 Download PDFInfo
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- JP2010509751A JP2010509751A JP2009535166A JP2009535166A JP2010509751A JP 2010509751 A JP2010509751 A JP 2010509751A JP 2009535166 A JP2009535166 A JP 2009535166A JP 2009535166 A JP2009535166 A JP 2009535166A JP 2010509751 A JP2010509751 A JP 2010509751A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
- 還元雰囲気中1100℃で、SrCO3、CaCo3およびオプションとしてBaCO3を、Eu2O3およびSiO2と混ぜ、そして焼成する。
- 原料の燐光粉末をミルにかける。
- 原料の燐光粉末を、真空または不活性雰囲気もしくは還元雰囲気において圧力20〜100Mpaの1300℃〜1400℃でホットプレスする。
Claims (10)
- 一次放射光および二次放射光を備える混合光を平均放射方向に放射するための装置であって、
第1波長において最大強度を有する第1一次放射光を放射するための少なくとも1つの第1電場発光光源と、
第1波長よりも大きな第2波長において最大強度を有する第2一次放射光を放射するための少なくとも1つの第2電場発光光源と、
前記一次放射光の少なくとも1つを吸収しかつ二次放射光を再放射するための光変換素子であって、前記混合光における一次放射光の全割合が、前記光変換素子を通過するように構成されていて、かつ一次および二次放射光を含む前記混合光のカラーポイントが実質的に観察角に依存しないように、その微細構造が選択されるセラミック光変換材料を、備える、光変換素子とを、
備える、混合光を放射するための装置。 - 前記第1波長が、スペクトルの青色または紫外領域にあり、そして前記第2波長が、前記スペクトルの赤色領域にある、請求項1に記載の混合光を放射するための装置。
- 前記セラミック光変換材料が、平均直径50nm〜5000nmの複数の酸化物粒子を備える、請求項1または請求項2に記載の混合光を放射するための装置。
- 前記セラミック光変換材料の屈折率と前記酸化物粒子の屈折率との間の差異が、0.2を超える、請求項3に記載の混合光を放射するための装置。
- 前記セラミック光変換材料が、平均直径250nm〜2900nmの複数の細孔を備える、請求項3または請求項4に記載の混合光を放射するための装置。
- 前記セラミック光変換材料の密度が、該当する結晶材料の理論的最大密度の97%を超える、請求項1から請求項5の何れか一項に記載の混合光を放射するための装置。
- 前記光変換素子が、前記第1および第2電場発光光源に光学的に結合され、好ましくは、前記光変換素子と前記光源との間のシリコーン層によって結合される、請求項1から請求項6の何れか一項に記載の混合光を放射するための装置。
- 前記光変換素子が、前記混合光の平均放射方向に実質的に垂直な表面法線を有する側面上に、反射層を備える、請求項1から請求項7の何れか一項に記載の混合光を放射するための装置。
- 前記第1および第2の一次放射光の強度が、互いに独立して、操作ユニットを用いて可変に設定できる、請求項1から請求項8の何れか一項に記載の混合光を放射するための装置。
- 一次および二次放射光から生成される混合光を平均放射方向に放射し、かつ前記一次放射光の少なくとも1つを吸収しかつ前記二次放射光を再放射するための光変換素子であって、一次および二次放射光から生成される前記混合光の前記カラーポイントが、実質的に前記観察角に依存しないように、その微細構造が選択されるセラミック材料を備える、光変換素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06123572 | 2006-11-07 | ||
PCT/IB2007/054376 WO2008056292A1 (en) | 2006-11-07 | 2007-10-29 | Arrangement for emitting mixed light |
Publications (1)
Publication Number | Publication Date |
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JP2010509751A true JP2010509751A (ja) | 2010-03-25 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009535166A Pending JP2010509751A (ja) | 2006-11-07 | 2007-10-29 | 混合光を放射するための装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8113675B2 (ja) |
EP (1) | EP2089916A1 (ja) |
JP (1) | JP2010509751A (ja) |
CN (1) | CN101542754B (ja) |
WO (1) | WO2008056292A1 (ja) |
Cited By (7)
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JP2014514368A (ja) * | 2011-02-24 | 2014-06-19 | 日東電工株式会社 | 蛍光体成分を有する発光複合材 |
WO2014171170A1 (ja) * | 2013-04-16 | 2014-10-23 | 電気化学工業株式会社 | 蛍光体、発光装置及び照明装置 |
KR20150113132A (ko) * | 2013-01-28 | 2015-10-07 | 쇼오트 아게 | 강산란 세라믹 컨버터 및 이의 제조 방법 |
JP2016524316A (ja) * | 2013-04-22 | 2016-08-12 | クライツール スポル.エス アール.オー.Crytur Spol.S R.O. | 単結晶蛍光体を有する白色発光ダイオードとその製造方法 |
JP2018512617A (ja) * | 2015-04-07 | 2018-05-17 | マテリオン コーポレイション | 光学的に向上された固体状態の光変換器 |
WO2020080056A1 (ja) * | 2018-10-15 | 2020-04-23 | ソニー株式会社 | 発光デバイスおよび画像表示装置 |
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US9120975B2 (en) | 2006-10-20 | 2015-09-01 | Intematix Corporation | Yellow-green to yellow-emitting phosphors based on terbium-containing aluminates |
EP2216834B1 (en) | 2007-11-29 | 2017-03-15 | Nichia Corporation | Light-emitting apparatus |
CN102113119A (zh) * | 2008-05-29 | 2011-06-29 | 克利公司 | 具有近场混合的光源 |
WO2010010484A1 (en) * | 2008-07-22 | 2010-01-28 | Koninklijke Philips Electronics N.V. | An optical element for a light emitting device and a method of manufacturing thereof |
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US8129735B2 (en) * | 2008-09-24 | 2012-03-06 | Koninklijke Philips Electronics N.V. | LED with controlled angular non-uniformity |
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JP2014514368A (ja) * | 2011-02-24 | 2014-06-19 | 日東電工株式会社 | 蛍光体成分を有する発光複合材 |
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JP2017197774A (ja) * | 2013-01-28 | 2017-11-02 | ショット アクチエンゲゼルシャフトSchott AG | 強散乱性のセラミック変換部材並びにその製造法 |
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JPWO2020080056A1 (ja) * | 2018-10-15 | 2021-09-30 | ソニーグループ株式会社 | 発光デバイスおよび画像表示装置 |
JP7392653B2 (ja) | 2018-10-15 | 2023-12-06 | ソニーグループ株式会社 | 発光デバイスおよび画像表示装置 |
US12040435B2 (en) | 2018-10-15 | 2024-07-16 | Sony Corporation | Light-emitting device and image display apparatus with reflection film on side surface and layers having different refractive indices |
JP2021057385A (ja) * | 2019-09-27 | 2021-04-08 | 日亜化学工業株式会社 | 発光装置 |
JP7361257B2 (ja) | 2019-09-27 | 2023-10-16 | 日亜化学工業株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
US20120134134A1 (en) | 2012-05-31 |
US8113675B2 (en) | 2012-02-14 |
CN101542754B (zh) | 2012-04-18 |
WO2008056292A1 (en) | 2008-05-15 |
US8256914B2 (en) | 2012-09-04 |
US20100067233A1 (en) | 2010-03-18 |
CN101542754A (zh) | 2009-09-23 |
EP2089916A1 (en) | 2009-08-19 |
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