JP2010500760A - 基板支持体の加熱及び冷却 - Google Patents
基板支持体の加熱及び冷却 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B29/00—Combined heating and refrigeration systems, e.g. operating alternately or simultaneously
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
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- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Thermal Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
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Abstract
Description
本発明の実施形態は概して、基板の処理、特には、処理チャンバにおいて基板の温度を調節するための基板支持アセンブリに関する。より具体的には、本発明は、例えば、化学気相蒸着(CVD)、物理気相蒸着(PVD)、エッチング及び基板材料を堆積、エッチング又はアニールするための他の基板処理反応において用いることが可能な方法及び装置に関する。
(関連技術の説明)
基板支持アセンブリ238は軸242に連結され且つ(図示されるような)上昇処理位置と基板搬送時の下降位置との間で基板支持アセンブリ238の移動を行う昇降システム(図示せず)に接続されている。また、軸242は、基板支持アセンブリ238と処理チャンバ202の他の構成要素とをつなぐ導線や熱電対リード線の導管となる。蛇腹部246は基板支持アセンブリ238に連結されており、処理容積212と処理チャンバ202の外部大気との間を真空シールし且つ基板支持アセンブリ238の垂直運動を円滑にしている。
上述したように、大面積基板の基板処理中、大面積基板の温度を調節する及び維持するにあたっては問題が生じる。従って、均一な温度プロファイルを達成するためには、加熱に加えて、基板の冷却が更に必要となる場合がある。本発明の1つ以上の態様において、基板支持アセンブリ238は、伝導体224に埋設された冷却構造310を更に含み得る。
図5は、処理チャンバ内において基板の温度を制御するための一例示的な方法500のフロー図である。運転中、基板は、工程510において、処理チャンバの内の基板支持アセンブリの基板支持表面上に位置決めされる。基板処理前及び/又は基板処理中、基板支持アセンブリの伝導体の上にある基板支持表面の温度は、約400℃以下の設定温度(約80℃〜約400℃又は約10℃〜約200℃)に維持される。工程520において、冷却流体、ガス又は空気を冷却構造の冷却チャネルに流す。例えば、冷却流体を、基板支持アセンブリの伝導体内に埋設された1つ以上の冷却チャネルに一定流量で流す。一実施形態において、冷却構造は同じ長さの2つ以上の分岐冷却路を含んでおり、この同じ長さの分岐冷却路を流れる冷却流体の流量を一定に維持することにより、基板支持表面の領域全体の冷却を行う。
Claims (21)
- 大面積基板を支持するように適合された装置であり、
熱伝導体を有する基板支持アセンブリと、
熱伝導体の表面上に在り且つその上で大面積基板を支持するように適合された基板支持表面と、
熱伝導体内に埋設された1つ以上の加熱要素と、
1つ以上の加熱要素と同一平面となるように熱伝導体内に埋設された2つ以上の冷却チャネルとを備える装置。 - 2つ以上の冷却チャネルのそれぞれは、基板支持表面の全領域の冷却を行うように適合された2つ以上の分岐冷却路を備え、2つ以上の分岐冷却路は、熱伝導体内に等しい全長で埋設され且つ1つ以上の加熱要素と同一平面となるように構成されている請求項1記載の装置。
- 2つ以上の分岐冷却路が、単一の流入口から単一の流出口に延びて等しい抵抗冷却が得られる請求項2記載の装置。
- 冷却流体は、2つ以上の分岐冷却路内を等しい流量で流される請求項2記載の装置。
- 冷却ガス、冷却液体、水、清浄な乾燥空気、圧縮空気、冷却オイル及びこれらの組み合わせから成る群から選択された冷却流体が、2つ以上の冷却チャネル内に流される請求項1記載の装置。
- 2つ以上の冷却チャネルは、鍛造、溶接、摩擦攪拌溶接、爆着、電子ビーム溶接、磨削及びこれらの組み合わせから成る群から選択された技法によって形成される請求項1記載の装置。
- 基板支持表面が矩形であり且つ約370mmx約470mm以上の寸法を有する大面積基板を支持するように適合されている請求項1記載の装置。
- 基板支持アセンブリは、太陽電池、ソーラーパネル、フラットパネルディスプレイ(FPD)、フレキシブルディスプレイ、有機発光ダイオード(OLED)ディスプレイ、フレキシブル有機発光ダイオード(FOLED)ディスプレイ、高分子発光ダイオード(PLED)ディスプレイ、液晶ディスプレイ(LCD)、有機薄膜トランジスタ、アクティブマトリクス、パッシブマトリクス、トップエミッション型素子、ボトムエミッション型素子及びこれらの組み合わせから成る群から選択された装置を製造するための1つ以上の大面積矩形基板を支持するように構成されている請求項1記載の装置。
- 大面積基板を支持するように適合された装置であり、
熱伝導体を有する基板支持アセンブリと、
熱伝導体の表面上に在り且つその上で大面積基板を支持するように適合された基板支持表面と、
熱伝導体内に埋設され且つ基板支持表面を加熱する及び冷却するための、所望の温度設定点にて流体が流れるように適合された1つ以上のチャネルを備える装置。 - 1つ以上のチャネルに接続され且つ熱伝導体の外部に配置された、1つ以上のチャネル内を流れる流体の温度を所望の温度設定点に調節するための流体再循環ユニットを更に備える請求項9記載の装置。
- 流体は1つ以上のチャネルと流体再循環ユニットとの間に流され、流体は、熱せられたオイル、熱水、冷却されたオイル、冷水、熱せられたガス、冷ガス及びこれらの組み合わせから成る群から選択される請求項10記載の装置。
- 1つ以上のチャネル内の流体は、約100℃〜約200℃の所望の温度設定点にて流される請求項9記載の装置。
- 大面積基板を処理するための装置であり、
処理チャンバと、
大面積基板を支持するように適合された基板支持アセンブリを備え、基板支持アセンブリは、
熱伝導体と、
熱伝導体の表面上に在り且つその上で大面積基板を支持するように適合された基板支持表面と、
熱伝導体内に埋設された1つ以上の加熱要素と、
1つ以上の加熱要素と同一平面となるように熱伝導体内に埋設された2つ以上の冷却チャネルとを備え、
前記装置は処理チャンバ内に配置された、1つ以上の処理ガスを基板支持アセンブリ上に供給するためのガス分配板アセンブリを更に備えている装置。 - 2つ以上の冷却チャネルのそれぞれは、基板支持表面の全領域の冷却を行うように構成された2つ以上の分岐冷却路を備え、2つ以上の分岐冷却路は、等しい全長にて熱伝導体内に埋設されるように構成された請求項13記載の装置。
- 2つ以上の分岐冷却路が、単一の流入口から単一の流出口に延びて等しい抵抗冷却が得られるように構成されている請求項14記載の装置。
- 処理チャンバ内において大面積基板の温度を維持するための方法であり、
大面積基板を処理チャンバの基板支持アセンブリの基板支持表面上に準備することを含み、基板支持アセンブリは、
大面積基板を支持するように適合された基板支持表面をその上に有する熱伝導体と、
熱伝導体内に埋設された1つ以上の加熱要素と、
1つ以上の加熱要素と同一平面となるように熱伝導体内に埋設された2つ以上の冷却チャネルとを備え、
前記方法は、2つ以上の冷却チャネル内に冷却流体を流し、
1つ以上の加熱要素のための第1電源及び2つ以上の冷却チャネルのための第2電源を調節し、大面積基板の温度を維持することを更に含む方法。 - 大面積基板の温度は、第1電源及び第2電源のオン/オフの組み合わせによって一定に維持される請求項16記載の方法。
- 大面積基板の温度は、約100℃〜約200℃の設定温度に、設置温度に対して約+/−5℃以下の温度均一性でもって維持される請求項16記載の方法。
- 2つ以上の分岐冷却路は、熱伝導体内に等しい全長にて且つ1つ以上の加熱要素と同一平面となるように埋設される請求項16記載の方法。
- 冷却ガス、冷却液体、水、清浄な乾燥空気、圧縮空気、冷却オイル及びこれらの組み合わせから成る群から選択された冷却流体は、2つ以上の分岐冷却路内を等しい流量で流される請求項16記載の方法。
- 2つ以上の分岐冷却路は、単一の流入点から単一の流出点に延びている請求項16記載の方法。
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011102263A1 (ja) * | 2010-02-16 | 2011-08-25 | シャープ株式会社 | 真空処理装置 |
JP2012521652A (ja) * | 2009-03-24 | 2012-09-13 | ラム リサーチ コーポレーション | デチャック時における電位スパイクを抑制する方法及び装置 |
JP2013026561A (ja) * | 2011-07-25 | 2013-02-04 | Tokyo Electron Ltd | 温度制御ユニット、基板載置台、基板処理装置、温度制御システム、及び基板処理方法 |
JP2013084936A (ja) * | 2011-10-12 | 2013-05-09 | Asml Netherlands Bv | 放射ビーム溶接方法、本体及びリソグラフィ装置 |
KR101522561B1 (ko) * | 2013-08-23 | 2015-05-26 | (주)위지트 | 온도 균일성이 향상된 서셉터 |
JP2017227325A (ja) * | 2016-06-14 | 2017-12-28 | バット ホールディング アーゲー | 流量を制御するためのおよび流路を遮断するための真空バルブ |
JP2020061401A (ja) * | 2018-10-05 | 2020-04-16 | 日本特殊陶業株式会社 | 保持装置 |
JP2020514529A (ja) * | 2016-12-21 | 2020-05-21 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Cvdによる共形密封膜堆積 |
JP7423410B2 (ja) | 2020-05-11 | 2024-01-29 | 株式会社アルバック | プラズマ処理方法 |
Families Citing this family (289)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060011139A1 (en) * | 2004-07-16 | 2006-01-19 | Applied Materials, Inc. | Heated substrate support for chemical vapor deposition |
US8709162B2 (en) * | 2005-08-16 | 2014-04-29 | Applied Materials, Inc. | Active cooling substrate support |
US7833885B2 (en) * | 2008-02-11 | 2010-11-16 | Applied Materials, Inc. | Microcrystalline silicon thin film transistor |
KR101703511B1 (ko) * | 2008-06-27 | 2017-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 |
US20100059182A1 (en) * | 2008-09-05 | 2010-03-11 | Jusung Engineering Co., Ltd. | Substrate processing apparatus |
JP4811881B2 (ja) * | 2009-03-18 | 2011-11-09 | 東京エレクトロン株式会社 | 基板熱処理装置 |
US20110180233A1 (en) * | 2010-01-27 | 2011-07-28 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
US9338871B2 (en) * | 2010-01-29 | 2016-05-10 | Applied Materials, Inc. | Feedforward temperature control for plasma processing apparatus |
US8916793B2 (en) | 2010-06-08 | 2014-12-23 | Applied Materials, Inc. | Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow |
US8410393B2 (en) | 2010-05-24 | 2013-04-02 | Lam Research Corporation | Apparatus and method for temperature control of a semiconductor substrate support |
US8880227B2 (en) | 2010-05-27 | 2014-11-04 | Applied Materials, Inc. | Component temperature control by coolant flow control and heater duty cycle control |
US20120148760A1 (en) * | 2010-12-08 | 2012-06-14 | Glen Eric Egami | Induction Heating for Substrate Processing |
US9719166B2 (en) | 2011-06-21 | 2017-08-01 | Spts Technologies Limited | Method of supporting a workpiece during physical vapour deposition |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US10274270B2 (en) | 2011-10-27 | 2019-04-30 | Applied Materials, Inc. | Dual zone common catch heat exchanger/chiller |
KR101971312B1 (ko) * | 2011-11-23 | 2019-04-22 | 램 리써치 코포레이션 | 다중 존 가스 주입 상부 전극 시스템 |
JP5961366B2 (ja) * | 2011-11-28 | 2016-08-02 | 東芝機械株式会社 | ワーク設置装置およびワーク設置方法 |
JP5798020B2 (ja) * | 2011-12-01 | 2015-10-21 | 東芝機械株式会社 | ワーク設置装置およびワーク設置方法 |
US20130171769A1 (en) * | 2011-12-30 | 2013-07-04 | Innovation & Infinity Global Corp. | Manufacturing method of composite poly-silicon substrate of solar cell |
DE102012100927A1 (de) * | 2012-02-06 | 2013-08-08 | Roth & Rau Ag | Prozessmodul |
JP5905735B2 (ja) * | 2012-02-21 | 2016-04-20 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法 |
CN103377868A (zh) * | 2012-04-14 | 2013-10-30 | 靖江先锋半导体科技有限公司 | 一种刻蚀电极机中的下电极装置 |
US20130284372A1 (en) * | 2012-04-25 | 2013-10-31 | Hamid Tavassoli | Esc cooling base for large diameter subsrates |
CN102758192B (zh) * | 2012-06-05 | 2014-08-20 | 中国电子科技集团公司第四十八研究所 | 一种半导体外延片载片盘及其支撑装置及mocvd反应室 |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US10727092B2 (en) * | 2012-10-17 | 2020-07-28 | Applied Materials, Inc. | Heated substrate support ring |
US9478447B2 (en) * | 2012-11-26 | 2016-10-25 | Applied Materials, Inc. | Substrate support with wire mesh plasma containment |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9051649B2 (en) * | 2013-03-11 | 2015-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor film deposition apparatus and method with improved heater cooling efficiency |
US10125422B2 (en) * | 2013-03-27 | 2018-11-13 | Applied Materials, Inc. | High impedance RF filter for heater with impedance tuning device |
WO2014176532A1 (en) * | 2013-04-26 | 2014-10-30 | Immersion Corporation | Simulation of tangible user interface interactions and gestures using array of haptic cells |
DE102013105320A1 (de) | 2013-05-23 | 2014-11-27 | Ev Group E. Thallner Gmbh | Vorrichtung und Verfahren zum Beschichten eines Substrats |
CN103280416B (zh) * | 2013-05-31 | 2016-05-04 | 深圳市华星光电技术有限公司 | 一种热处理装置 |
US9859145B2 (en) * | 2013-07-17 | 2018-01-02 | Lam Research Corporation | Cooled pin lifter paddle for semiconductor substrate processing apparatus |
US9677177B2 (en) * | 2013-10-24 | 2017-06-13 | Applied Materials, Inc. | Substrate support with quadrants |
WO2015106414A1 (zh) * | 2014-01-16 | 2015-07-23 | 华为终端有限公司 | 液晶显示器及液晶显示器检测方法和电子装置 |
KR102299392B1 (ko) * | 2014-02-14 | 2021-09-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부 |
US9338829B2 (en) * | 2014-02-14 | 2016-05-10 | Varian Semiconductor Equipment Associates, Inc. | Heated platen with improved temperature uniformity |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9543171B2 (en) * | 2014-06-17 | 2017-01-10 | Lam Research Corporation | Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10475687B2 (en) * | 2014-11-20 | 2019-11-12 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
US9872341B2 (en) | 2014-11-26 | 2018-01-16 | Applied Materials, Inc. | Consolidated filter arrangement for devices in an RF environment |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
KR102374079B1 (ko) * | 2015-03-13 | 2022-03-16 | 주성엔지니어링(주) | 기판 처리장치에 구비되는 기판안착부 |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US20170051402A1 (en) * | 2015-08-17 | 2017-02-23 | Asm Ip Holding B.V. | Susceptor and substrate processing apparatus |
CN106470529B (zh) * | 2015-08-18 | 2019-09-17 | 活全机器股份有限公司 | 具有均匀冷却效果的冷却压合机 |
CN106544650A (zh) * | 2015-09-16 | 2017-03-29 | 沈阳拓荆科技有限公司 | 基座分体式控温盘 |
CN106544649A (zh) * | 2015-09-16 | 2017-03-29 | 沈阳拓荆科技有限公司 | 基座一体式控温盘 |
CN106544648A (zh) * | 2015-09-16 | 2017-03-29 | 沈阳拓荆科技有限公司 | 无气道式控温盘 |
WO2017052958A1 (en) * | 2015-09-22 | 2017-03-30 | Applied Materials, Inc. | Large area dual substrate processing system |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
CN106609365A (zh) * | 2015-10-22 | 2017-05-03 | 沈阳拓荆科技有限公司 | 一种半导体镀膜设备用双通道控温装置 |
US20170178758A1 (en) * | 2015-12-18 | 2017-06-22 | Applied Materials, Inc. | Uniform wafer temperature achievement in unsymmetric chamber environment |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10780447B2 (en) * | 2016-04-26 | 2020-09-22 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10648080B2 (en) * | 2016-05-06 | 2020-05-12 | Applied Materials, Inc. | Full-area counter-flow heat exchange substrate support |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US9964863B1 (en) * | 2016-12-20 | 2018-05-08 | Applied Materials, Inc. | Post exposure processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
CN106894002A (zh) * | 2017-03-31 | 2017-06-27 | 昆山国显光电有限公司 | 一种pecvd成膜装置及其成膜方法 |
WO2018184949A1 (en) * | 2017-04-07 | 2018-10-11 | Applied Materials, Inc. | Method for cleaning a vacuum chamber, apparatus for vacuum processing of a substrate, and system for the manufacture of devices having organic materials |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
CN107272233A (zh) * | 2017-07-24 | 2017-10-20 | 武汉华星光电技术有限公司 | 对位装置 |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US11330673B2 (en) * | 2017-11-20 | 2022-05-10 | Applied Materials, Inc. | Heated substrate support |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
CN111344522B (zh) | 2017-11-27 | 2022-04-12 | 阿斯莫Ip控股公司 | 包括洁净迷你环境的装置 |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11328929B2 (en) | 2018-05-01 | 2022-05-10 | Applied Materials, Inc. | Methods, apparatuses and systems for substrate processing for lowering contact resistance |
TWI811348B (zh) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
CN112292477A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
KR20210024462A (ko) | 2018-06-27 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
JP7278049B2 (ja) * | 2018-09-28 | 2023-05-19 | 日本特殊陶業株式会社 | 保持装置 |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的***及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
TWI838458B (zh) | 2019-02-20 | 2024-04-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於3d nand應用中之插塞填充沉積之設備及方法 |
JP7509548B2 (ja) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
CN110241403A (zh) * | 2019-07-23 | 2019-09-17 | 芜湖通潮精密机械股份有限公司 | 一种减小温差的加热器及其制作方法和应用 |
US11692261B2 (en) | 2019-07-26 | 2023-07-04 | Applied Materials, Inc. | Evaporator chamber for forming films on substrates |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN110415611B (zh) * | 2019-07-31 | 2021-12-07 | 友达光电(昆山)有限公司 | 显示面板 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR102297382B1 (ko) * | 2019-10-18 | 2021-09-01 | 세메스 주식회사 | 기판 처리 시스템 및 방법 |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
TW202125596A (zh) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成氮化釩層之方法以及包括該氮化釩層之結構 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
JP2021111783A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | チャネル付きリフトピン |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
TW202140831A (zh) | 2020-04-24 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含氮化釩層及包含該層的結構之方法 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
TW202147383A (zh) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220006455A (ko) | 2020-07-08 | 2022-01-17 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
CN112210767B (zh) * | 2020-08-31 | 2023-02-21 | 广东鼎泰机器人科技有限公司 | 一种涂层机 |
CN112251732B (zh) * | 2020-08-31 | 2023-02-17 | 广东鼎泰机器人科技有限公司 | 一种涂层机的载料装置 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235649A (zh) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 填充間隙之方法與相關之系統及裝置 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
CN115142045B (zh) * | 2021-03-29 | 2023-12-19 | 鑫天虹(厦门)科技有限公司 | 可准确调整温度的承载盘及薄膜沉积装置 |
US20220333231A1 (en) * | 2021-04-15 | 2022-10-20 | Applied Materials, Inc. | Evaporation source cooling mechanism |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
CN116705669B (zh) * | 2023-08-04 | 2023-10-20 | 盛吉盛半导体科技(北京)有限公司 | 一种冷却效果均匀的半导体设备用加热灯盘及冷却方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02162747A (ja) * | 1988-12-15 | 1990-06-22 | Asutoro Design Kk | サーモチャック |
JPH1032238A (ja) * | 1996-04-19 | 1998-02-03 | Applied Komatsu Technol Kk | 被加熱型基板支持構造体 |
JPH1050811A (ja) * | 1996-03-16 | 1998-02-20 | Miyata R Andei:Kk | 半導体基板の温度調節機構 |
JP2004505443A (ja) * | 2000-07-10 | 2004-02-19 | テンプトロニック コーポレイション | 交互配置された加熱および冷却要素と交換可能な上面アセンブリと硬膜層表面とをもつ熱プレートを有するウェーハチャック |
JP2004155070A (ja) * | 2002-11-07 | 2004-06-03 | Meiki Co Ltd | ディスク基板の成形用金型および成形方法 |
JP2004273619A (ja) * | 2003-03-06 | 2004-09-30 | Hitachi High-Technologies Corp | 真空処理装置用の試料載置装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6033480A (en) * | 1994-02-23 | 2000-03-07 | Applied Materials, Inc. | Wafer edge deposition elimination |
US5846375A (en) * | 1996-09-26 | 1998-12-08 | Micron Technology, Inc. | Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment |
US6035101A (en) * | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
US7314537B2 (en) * | 2003-09-30 | 2008-01-01 | Tokyo Electron Limited | Method and apparatus for detecting a plasma |
KR100674922B1 (ko) * | 2004-12-02 | 2007-01-26 | 삼성전자주식회사 | 포커스 링을 냉각하는 냉각 유로를 가지는 웨이퍼지지장치 |
US7429718B2 (en) * | 2005-08-02 | 2008-09-30 | Applied Materials, Inc. | Heating and cooling of substrate support |
-
2007
- 2007-07-12 US US11/776,980 patent/US20080035306A1/en not_active Abandoned
- 2007-07-23 CN CN2007900000787U patent/CN201436515U/zh not_active Expired - Lifetime
- 2007-07-23 WO PCT/US2007/074132 patent/WO2008021668A2/en active Application Filing
- 2007-07-23 JP JP2009523882A patent/JP2010500760A/ja active Pending
- 2007-07-23 KR KR2020097000004U patent/KR200465330Y1/ko not_active IP Right Cessation
- 2007-08-03 TW TW096128739A patent/TWI449121B/zh active
-
2011
- 2011-09-21 US US13/238,476 patent/US20120006493A1/en not_active Abandoned
-
2012
- 2012-08-28 JP JP2012005258U patent/JP3179605U/ja not_active Expired - Lifetime
-
2015
- 2015-08-24 US US14/834,324 patent/US20150364350A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02162747A (ja) * | 1988-12-15 | 1990-06-22 | Asutoro Design Kk | サーモチャック |
JPH1050811A (ja) * | 1996-03-16 | 1998-02-20 | Miyata R Andei:Kk | 半導体基板の温度調節機構 |
JPH1032238A (ja) * | 1996-04-19 | 1998-02-03 | Applied Komatsu Technol Kk | 被加熱型基板支持構造体 |
JP2004505443A (ja) * | 2000-07-10 | 2004-02-19 | テンプトロニック コーポレイション | 交互配置された加熱および冷却要素と交換可能な上面アセンブリと硬膜層表面とをもつ熱プレートを有するウェーハチャック |
JP2004155070A (ja) * | 2002-11-07 | 2004-06-03 | Meiki Co Ltd | ディスク基板の成形用金型および成形方法 |
JP2004273619A (ja) * | 2003-03-06 | 2004-09-30 | Hitachi High-Technologies Corp | 真空処理装置用の試料載置装置 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012521652A (ja) * | 2009-03-24 | 2012-09-13 | ラム リサーチ コーポレーション | デチャック時における電位スパイクを抑制する方法及び装置 |
WO2011102263A1 (ja) * | 2010-02-16 | 2011-08-25 | シャープ株式会社 | 真空処理装置 |
JP2011168810A (ja) * | 2010-02-16 | 2011-09-01 | Sharp Corp | 真空処理装置 |
JP2013026561A (ja) * | 2011-07-25 | 2013-02-04 | Tokyo Electron Ltd | 温度制御ユニット、基板載置台、基板処理装置、温度制御システム、及び基板処理方法 |
JP2013084936A (ja) * | 2011-10-12 | 2013-05-09 | Asml Netherlands Bv | 放射ビーム溶接方法、本体及びリソグラフィ装置 |
US9409251B2 (en) | 2011-10-12 | 2016-08-09 | Asml Netherlands B.V. | Radiation beam welding method, body and lithographic apparatus |
KR101522561B1 (ko) * | 2013-08-23 | 2015-05-26 | (주)위지트 | 온도 균일성이 향상된 서셉터 |
JP2017227325A (ja) * | 2016-06-14 | 2017-12-28 | バット ホールディング アーゲー | 流量を制御するためのおよび流路を遮断するための真空バルブ |
JP7128611B2 (ja) | 2016-06-14 | 2022-08-31 | バット ホールディング アーゲー | 流量を制御するためのおよび流路を遮断するための真空バルブ |
JP2020514529A (ja) * | 2016-12-21 | 2020-05-21 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Cvdによる共形密封膜堆積 |
JP2020061401A (ja) * | 2018-10-05 | 2020-04-16 | 日本特殊陶業株式会社 | 保持装置 |
JP7423410B2 (ja) | 2020-05-11 | 2024-01-29 | 株式会社アルバック | プラズマ処理方法 |
Also Published As
Publication number | Publication date |
---|---|
US20080035306A1 (en) | 2008-02-14 |
US20120006493A1 (en) | 2012-01-12 |
TW200816362A (en) | 2008-04-01 |
WO2008021668A3 (en) | 2008-09-25 |
JP3179605U (ja) | 2012-11-08 |
TWI449121B (zh) | 2014-08-11 |
KR200465330Y1 (ko) | 2013-02-13 |
WO2008021668A2 (en) | 2008-02-21 |
KR20090004972U (ko) | 2009-05-25 |
CN201436515U (zh) | 2010-04-07 |
US20150364350A1 (en) | 2015-12-17 |
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