JP2010243490A - Mim積分キャパシタを有するボロメータピクセル - Google Patents
Mim積分キャパシタを有するボロメータピクセル Download PDFInfo
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- JP2010243490A JP2010243490A JP2010078627A JP2010078627A JP2010243490A JP 2010243490 A JP2010243490 A JP 2010243490A JP 2010078627 A JP2010078627 A JP 2010078627A JP 2010078627 A JP2010078627 A JP 2010078627A JP 2010243490 A JP2010243490 A JP 2010243490A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 37
- 230000010354 integration Effects 0.000 title claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 238000004377 microelectronic Methods 0.000 claims abstract description 18
- 239000012528 membrane Substances 0.000 claims description 20
- 238000001931 thermography Methods 0.000 claims description 11
- 230000004044 response Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000003384 imaging method Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 14
- 230000005670 electromagnetic radiation Effects 0.000 description 7
- 230000004907 flux Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000003331 infrared imaging Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
【解決手段】
熱撮像マイクロ電子デバイスであって、
−支持体(200)と、
−前記支持体上に形成される電子コンポーネントを相互接続するための複数の金属レベル(M1、…、M5、M6)と、
−前記支持体上に形成され、各々が放射エネルギーを吸収し、且つ前記吸収した放射エネルギーに応じて1つ以上の電気信号を供給できる膜(210)を含む熱検出器アレイ、及び前記膜からの電気信号を読み出す、前記支持体に集積される読み出し手段と、
を備え、
前記検出器の少なくとも数個は、前記膜に対向して形成される少なくとも1つの積分キャパシタ(CI)を有する積分器を備えた読み出し手段を有し、
前記キャパシタは、前記複数の相互接続金属レベル(M1、…、M5、M6)の所与の相互接続金属レベルにおいて作成される少なくとも1つの上側プレート(244)有することを特徴とする、熱撮像マイクロ電子デバイス。
【選択図】図4
Description
−支持体と、
−前記支持体上に形成される電子コンポーネントを相互接続するための複数の金属レベルと、
−前記支持体上に形成され、各々が放射エネルギーを吸収し、且つ前記吸収した放射エネルギーに応じて1つ以上の電気信号を供給できる膜を含む熱検出器アレイ、及び前記膜からの電気信号を読み出す、前記支持体に集積される読み出し手段と、
を備え、
前記検出器の少なくとも数個は、前記膜に対向して形成される少なくとも1つの積分キャパシタを有する積分器を備えた読み出し手段を有し、
前記キャパシタは、前記複数の相互接続金属レベルの所与の相互接続金属レベルにおいて作成される少なくとも1つの上側プレート有することを特徴とする、熱撮像マイクロ電子デバイスに関する。
2 支持体
3 導電性マウント
4 層
5a、5b アーム
6 層
10 検出器
20 基準ボロメータ
30 積分器
40 コンパレータ
50 キャパシタ
80 サンプリング手段
100 感知ボロメータセンサのアレイ
101 基準センサの第1の組
102 基準センサの第2の組
110 行アドレス指定回路
120 列アドレス指定回路
200 支持体
201 基板
210 膜
230 導電性マウント
241 絶縁層
242 下側プレート
243 絶縁層
244 上側プレート
245 絶縁層
260 反射層
400 コンパレータ
M1、M2、M3、M4、M5、M6、Mbis 金属層
CI 積分キャパシタ
Claims (5)
- 熱撮像マイクロ電子デバイスであって、
−支持体(200)と、
−前記支持体上に形成される電子コンポーネントを相互接続するための複数の金属レベル(M1、…、M5、M6)と、
−前記支持体上に形成され、各々が放射エネルギーを吸収し、且つ前記吸収した放射エネルギーに応じて1つ以上の電気信号を供給できる膜(210)を含む熱検出器アレイ、及び前記膜からの電気信号を読み出す、前記支持体に集積される読み出し手段と、
を備え、
前記検出器の少なくとも数個は、前記膜に対向して形成される少なくとも1つの積分キャパシタ(CI)を有する積分器を備えた読み出し手段を有し、
前記キャパシタは、前記複数の相互接続金属レベル(M1、…、M5、M6)の所与の相互接続金属レベルにおいて作成される少なくとも1つの上側プレート(244)有することを特徴とする、熱撮像マイクロ電子デバイス。 - 前記MIMキャパシタは、前記相互接続金属レベルの他のレベルに形成される少なくとも1つの下側プレート(242)を有する、請求項1に記載の熱撮像マイクロ電子デバイス。
- 前記上側プレート(242)は、1以上の垂直方向の相互接続部材を介して前記読み出し手段に接続される、請求項1又は2に記載の熱撮像マイクロ電子デバイス。
- 前記プレートの1つは、前記アレイの同一の行の検出器によって共有される、請求項1〜3のいずれか一項に記載の熱撮像マイクロ電子デバイス。
- 前記上側プレートは、前記アレイの同一の行の検出器によって共有される、請求項4に記載の熱撮像マイクロ電子デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0952033A FR2943783B1 (fr) | 2009-03-31 | 2009-03-31 | Pixel de bolometre dote d'un condensateur d'integration mim |
FR0952033 | 2009-03-31 |
Publications (2)
Publication Number | Publication Date |
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JP2010243490A true JP2010243490A (ja) | 2010-10-28 |
JP5667777B2 JP5667777B2 (ja) | 2015-02-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010078627A Expired - Fee Related JP5667777B2 (ja) | 2009-03-31 | 2010-03-30 | Mim積分キャパシタを有するボロメータピクセル |
Country Status (4)
Country | Link |
---|---|
US (1) | US8426815B2 (ja) |
EP (1) | EP2237005A1 (ja) |
JP (1) | JP5667777B2 (ja) |
FR (1) | FR2943783B1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102564601A (zh) * | 2010-12-22 | 2012-07-11 | 精工爱普生株式会社 | 热式光检测装置、电子设备、热式光检测器及其制造方法 |
US9679779B2 (en) | 2011-03-30 | 2017-06-13 | The Aerospace Corporation | Systems and methods for depositing materials on either side of a freestanding film using selective thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same |
US9583354B2 (en) | 2011-03-30 | 2017-02-28 | The Aerospace Corporation | Systems and methods for depositing materials on either side of a freestanding film using laser-assisted chemical vapor deposition (LA-CVD), and structures formed using same |
US10680021B2 (en) * | 2017-05-12 | 2020-06-09 | General Electric Company | Active pixel sensor computed tomography (CT) detector and method of readout |
US10923525B2 (en) | 2017-07-12 | 2021-02-16 | Meridian Innovation Pte Ltd | CMOS cap for MEMS devices |
US10403674B2 (en) | 2017-07-12 | 2019-09-03 | Meridian Innovation Pte Ltd | Scalable thermoelectric-based infrared detector |
US10199424B1 (en) * | 2017-07-19 | 2019-02-05 | Meridian Innovation Pte Ltd | Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines |
WO2020204834A1 (en) | 2019-04-01 | 2020-10-08 | Meridian Innovation Pte Ltd | Heterogenous integration of complementary metal-oxide-semiconductor and mems sensors |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05183135A (ja) * | 1991-10-14 | 1993-07-23 | Sony Corp | Ccd撮像装置 |
JPH08166284A (ja) * | 1994-12-12 | 1996-06-25 | Nissan Motor Co Ltd | 赤外線検知素子 |
JP2734226B2 (ja) * | 1991-05-08 | 1998-03-30 | 日本電気株式会社 | 赤外線センサ |
JP2002148342A (ja) * | 2000-11-07 | 2002-05-22 | Canon Inc | 放射線撮像装置 |
JP2005188970A (ja) * | 2003-12-24 | 2005-07-14 | Matsushita Electric Ind Co Ltd | 熱型赤外線固体撮像装置および赤外線カメラ |
JP2007526472A (ja) * | 2004-03-04 | 2007-09-13 | コミサリア、ア、レネルジ、アトミク | アクティブ・マイクロボロメータおよびパッシブ・マイクロボロメータを備える放射の熱検出用装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021663B1 (en) * | 1988-08-12 | 1997-07-01 | Texas Instruments Inc | Infrared detector |
US6800923B1 (en) * | 2003-04-25 | 2004-10-05 | Oki Electric Industry Co., Ltd. | Multilayer analog interconnecting line layout for a mixed-signal integrated circuit |
JP2007509315A (ja) * | 2003-10-09 | 2007-04-12 | オカス コーポレーション | 2層構造のボロメータ型赤外線センサ及びその製造方法 |
JP4707330B2 (ja) * | 2004-03-30 | 2011-06-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
-
2009
- 2009-03-31 FR FR0952033A patent/FR2943783B1/fr active Active
-
2010
- 2010-03-09 US US12/720,340 patent/US8426815B2/en not_active Expired - Fee Related
- 2010-03-25 EP EP10157692A patent/EP2237005A1/fr not_active Withdrawn
- 2010-03-30 JP JP2010078627A patent/JP5667777B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2734226B2 (ja) * | 1991-05-08 | 1998-03-30 | 日本電気株式会社 | 赤外線センサ |
JPH05183135A (ja) * | 1991-10-14 | 1993-07-23 | Sony Corp | Ccd撮像装置 |
JPH08166284A (ja) * | 1994-12-12 | 1996-06-25 | Nissan Motor Co Ltd | 赤外線検知素子 |
JP2002148342A (ja) * | 2000-11-07 | 2002-05-22 | Canon Inc | 放射線撮像装置 |
JP2005188970A (ja) * | 2003-12-24 | 2005-07-14 | Matsushita Electric Ind Co Ltd | 熱型赤外線固体撮像装置および赤外線カメラ |
JP2007526472A (ja) * | 2004-03-04 | 2007-09-13 | コミサリア、ア、レネルジ、アトミク | アクティブ・マイクロボロメータおよびパッシブ・マイクロボロメータを備える放射の熱検出用装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100243892A1 (en) | 2010-09-30 |
JP5667777B2 (ja) | 2015-02-12 |
US8426815B2 (en) | 2013-04-23 |
FR2943783A1 (fr) | 2010-10-01 |
EP2237005A1 (fr) | 2010-10-06 |
FR2943783B1 (fr) | 2011-06-10 |
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