JP2010229557A - 表面処理装置 - Google Patents
表面処理装置 Download PDFInfo
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- JP2010229557A JP2010229557A JP2010163276A JP2010163276A JP2010229557A JP 2010229557 A JP2010229557 A JP 2010229557A JP 2010163276 A JP2010163276 A JP 2010163276A JP 2010163276 A JP2010163276 A JP 2010163276A JP 2010229557 A JP2010229557 A JP 2010229557A
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- 238000004381 surface treatment Methods 0.000 title claims abstract description 136
- 239000000463 material Substances 0.000 claims abstract description 96
- 230000005684 electric field Effects 0.000 claims abstract description 22
- 230000002093 peripheral effect Effects 0.000 claims description 64
- 238000011144 upstream manufacturing Methods 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 194
- 239000000758 substrate Substances 0.000 description 69
- 239000010409 thin film Substances 0.000 description 41
- 239000010408 film Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 11
- 239000002994 raw material Substances 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229940003953 helium / oxygen Drugs 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
【解決手段】基材12を特定方向に搬送しながら、その表面に向けて表面処理用ガスを供給することにより、基材12の表面処理を行う。具体的には、円筒状外周面を有して当該外周面が基材12の表面に隙間23をおいて対向し、基材12の搬送方向と略直交する方向の軸を中心に回転する回転体24と、回転体24を当該回転体24が基材12の表面に対向する部位を残して覆う覆い部材14と、この覆い部材14が基材12の表面に対向する面と当該基材12の表面との間に電界を形成する手段とを備える。覆い部材14内に供給された表面処理用ガスが回転体24の回転に伴いその外周面に巻き込まれて隙間23に導かれかつこの隙間23から電界形成領域に供給されてプラズマを生じさせるように、回転体24及び覆い部材14が配置される。
【選択図】図15
Description
等の活性源との距離が大きくなるほど顕著となる。
が固定され、この回転中心軸26の両端が、前記覆い部材14の底壁上に立設された一対の軸受台28を介して回転可能に支承されている。
膜の膜厚との関係を示したものである。図示のように、この実施例では、回転体24の外周面と対向板20との隙間23を5mm以下とすることによって成膜速度の著しい向上が見られ、特に当該隙間23を2mm以下(さらに好ましくは1mm以下)とすることによりきわめて速度の高い成膜を実現できることが確認できた。
2)前記隙間が最小となる位置から表面処理用ガス排出口18までの距離:11mm
3)表面処理用ガス排出口18のスリット幅:1〜5mm未満
4)底壁15の厚さ(表面処理用ガス排出口18の深さ):5mm
5)底壁15の下面と基材12との離間距離:5mm
6)放電電極34及び接地電極36の断面形状:矩形状(縦3mm×横5mm)
2)前記隙間が最小となる位置から表面処理用ガス排出口18までの距離:11mm
3)表面処理用ガス排出口18のスリット幅:1〜5mm未満
4)底壁15の厚さ(表面処理用ガス排出口18の深さ):5mm
5)底壁15の下面と基材12との離間距離:5mm
6)放電電極34の傾斜面34aの傾斜角度:30°
7)放電電極34の傾斜面34aと回転体24の外周面との水平距離の最小値:2mm
2)底壁15の厚さ:6〜10mm
3)底壁15の下面と基材12との離間距離:5mm
4)放電電極34の傾斜面34aの傾斜角度:30°
5)放電電極34の傾斜面34aと回転体24の外周面との水平距離:1〜5mm
8 基材搬送ベルト(基材搬送手段)
10 基材搬送台
12 基材
14 覆い部材
15 覆い部材の底壁
15a 凹面
16 表面処理用ガス供給口
18 表面処理用ガス排出口
20 対向板(対向部材)
20a 対向板の上端面
20′下流側対向板(下流側対向部材)
22 整流板(整流部材)
23,23′隙間
24 回転体
30 モータ(回転駆動手段)
34 放電電極
36 接地電極
40 プラズマ
Claims (3)
- 特定方向に基材を搬送する基材搬送手段と、その基材の表面に向けて表面処理用ガスを供給するガス供給手段とを備え、当該表面処理用ガスを前記基材表面またはその近傍で化学反応させることにより当該基材表面を処理するための表面処理装置において、前記ガス供給手段は、円筒状外周面を有し、その外周面が前記基材搬送手段により搬送される基材の表面に対向し、かつ、その中心軸が前記基材の搬送方向と略直交する方向を向くように配置された回転体と、この回転体をその中心軸回りに回転させる回転駆動手段と、前記回転体を当該回転体が前記基材の表面に対向する部位を残して覆う覆い部材と、この覆い部材が前記基材の表面に対向する面と当該基材の表面との間に電界を形成する電界形成手段とを備え、前記覆い部材内に供給された表面処理用ガスが前記回転体の回転に伴いその外周面に巻き込まれて当該回転体の外周面と前記基材の表面との隙間に導かれ、かつ、この隙間から前記電界形成手段により電界が形成される領域に供給されて当該領域でプラズマが生成されるように前記回転体及び覆い部材が配置されていることを特徴とする表面処理装置。
- 請求項1記載の表面処理装置において、前記ガス供給手段は、前記回転体と基材の表面との隙間から前記回転体の回転方向上流側に逆流したガスが前記電界形成領域に送り出されるように前記回転体及び覆い部材が配置されたものであることを特徴とする表面処理装置。
- 請求項1または2記載の表面処理装置において、前記電界形成領域における前記基材の表面とこれに対向する覆い部材の面との離間距離が前記基材の表面と前記回転体の外周面との離間距離よりも大きいことを特徴とする表面処理装置。
Priority Applications (1)
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JP2010163276A JP5405403B2 (ja) | 2003-10-29 | 2010-07-20 | 表面処理装置 |
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JP2003369212 | 2003-10-29 | ||
JP2003369212 | 2003-10-29 | ||
JP2010163276A JP5405403B2 (ja) | 2003-10-29 | 2010-07-20 | 表面処理装置 |
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JP2004297506A Division JP4597630B2 (ja) | 2003-10-29 | 2004-10-12 | 表面処理方法及び装置 |
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JP2010229557A true JP2010229557A (ja) | 2010-10-14 |
JP5405403B2 JP5405403B2 (ja) | 2014-02-05 |
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US (1) | US7459187B2 (ja) |
EP (1) | EP1683889B1 (ja) |
JP (1) | JP5405403B2 (ja) |
CN (1) | CN100523290C (ja) |
WO (1) | WO2005040454A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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WO2005040454A1 (ja) | 2003-10-29 | 2005-05-06 | Kabushiki Kaisha Kobe Seiko Sho | 表面処理方法及び装置 |
JP2009079233A (ja) * | 2006-06-16 | 2009-04-16 | Kobe Steel Ltd | 薄膜形成方法 |
US8720787B2 (en) * | 2009-03-31 | 2014-05-13 | Toda Kogyo Corporation | Composite RF tag, and tool mounted with the composite RF tag |
CN103160811A (zh) * | 2011-12-15 | 2013-06-19 | 麒安科技有限公司 | 有机金属化学气相沉积机台 |
Citations (6)
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---|---|---|---|---|
JPH09104985A (ja) * | 1995-08-08 | 1997-04-22 | Sanyo Electric Co Ltd | 回転電極を用いた高速成膜方法及びその装置 |
JP2002180256A (ja) * | 2000-12-15 | 2002-06-26 | Kobe Steel Ltd | 表面処理装置 |
JP2002237480A (ja) * | 2000-07-28 | 2002-08-23 | Sekisui Chem Co Ltd | 放電プラズマ処理方法 |
JP2004039799A (ja) * | 2002-07-02 | 2004-02-05 | Kobe Steel Ltd | プラズマcvd装置 |
JP2004107788A (ja) * | 2002-07-26 | 2004-04-08 | Kobe Steel Ltd | シリコン酸化薄膜またはチタン酸化薄膜の製造方法 |
JP2004204323A (ja) * | 2002-12-26 | 2004-07-22 | Kobe Steel Ltd | プラズマ処理装置 |
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- 2004-10-27 US US10/577,235 patent/US7459187B2/en not_active Expired - Fee Related
- 2004-10-27 CN CNB200480031912XA patent/CN100523290C/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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WO2005040454A1 (ja) | 2005-05-06 |
EP1683889B1 (en) | 2012-08-29 |
CN1875129A (zh) | 2006-12-06 |
US7459187B2 (en) | 2008-12-02 |
JP5405403B2 (ja) | 2014-02-05 |
EP1683889A1 (en) | 2006-07-26 |
EP1683889A4 (en) | 2009-07-29 |
US20070134414A1 (en) | 2007-06-14 |
CN100523290C (zh) | 2009-08-05 |
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