JP2010212427A - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

Info

Publication number
JP2010212427A
JP2010212427A JP2009056558A JP2009056558A JP2010212427A JP 2010212427 A JP2010212427 A JP 2010212427A JP 2009056558 A JP2009056558 A JP 2009056558A JP 2009056558 A JP2009056558 A JP 2009056558A JP 2010212427 A JP2010212427 A JP 2010212427A
Authority
JP
Japan
Prior art keywords
electrode
support
plasma processing
fine adjustment
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009056558A
Other languages
Japanese (ja)
Inventor
Tomoaki Ozaki
友亮 尾崎
Katsushi Kishimoto
克史 岸本
Yusuke Fukuoka
裕介 福岡
Hiroyuki Tadokoro
宏之 田所
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2009056558A priority Critical patent/JP2010212427A/en
Publication of JP2010212427A publication Critical patent/JP2010212427A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of easily and efficiently making the fine adjustment of an inter-electrode distance. <P>SOLUTION: The plasma processing apparatus includes: a chamber M1; a first electrode 11e and a second electrode 12e which are disposed in the chamber M1 to generate a plasma discharge, and which are flat plate shaped; a first support part 13 and a second support part 14 which respectively support the first electrode 11e and second electrode 12e while facing each other in parallel; and a fine adjusting mechanism A which relatively moves the first electrode 11e and second electrode 12e, supported by the first and second support parts 13 and 14, with screws to finely adjust the inter-electrode distance L1. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、プラズマ処理装置に関し、詳しくは、電極間距離を微調整可能な装置構造に関する。   The present invention relates to a plasma processing apparatus, and more particularly, to an apparatus structure capable of finely adjusting a distance between electrodes.

平行平板型のプラズマ処理装置は、カソード電極とアノード電極のうちの一方に被処理物である基板が設置され、反応ガス雰囲気下で電極間にプラズマ放電を起こして基板表面をプラズマ処理する装置である。
プラズマを安定的に発生させるには、基板とそれに対向する電極との間の放電ギャップ長の管理が重要であるため、従来のプラズマ処理装置ではカソード電極とアノード電極が固定されることによって電極間距離（例えば5〜30ｍｍ程度）が一定に維持されている。 A parallel plate type plasma processing apparatus is a device in which a substrate, which is an object to be processed, is placed on one of a cathode electrode and an anode electrode, and plasma processing is performed on the substrate surface by causing plasma discharge between the electrodes in a reactive gas atmosphere. is there.
In order to stably generate plasma, it is important to manage the discharge gap length between the substrate and the electrode facing the substrate. Therefore, in the conventional plasma processing apparatus, the cathode electrode and the anode electrode are fixed to each other. The distance (for example, about 5 to 30 mm) is kept constant.

プラズマ処理装置としては、チャンバー内に水平対向状にカソード電極とアノード電極が固定されたものが公知であり、カソード電極およびアノード電極は、それぞれの外周縁の四つ角近傍がチャンバー内に固設された複数の支持片上に載置されることによって所定の電極間距離に維持されている（特許文献１参照）。   As a plasma processing apparatus, one in which a cathode electrode and an anode electrode are fixed in a horizontally opposed manner in a chamber is known, and the cathode electrode and the anode electrode are fixed in the chamber in the vicinity of the four corners of their outer peripheral edges. By being placed on a plurality of support pieces, a predetermined distance between the electrodes is maintained (see Patent Document 1).

特開２００６−１２０９２６号公報JP 2006-120926 A

上述の公知のプラズマ処理装置の場合、特にカソード電極は、自重による中央部の下方への反り、あるいは長期使用による中央部の下方または上方への反りが生じる場合があり、その反りによって電極間距離が所望範囲から外れる場合があるため、プラズマ処理を行う前には特に中央部の電極間距離が所望範囲内となるように微調整していた。
具体的には、カソード電極が下方へ反った場合は、支持片とカソード電極との間にシムと呼ばれる薄い金属片を入れることによりカソード電極を僅かに持ち上げて電極間距離を微調整し、カソード電極が上方へ反った場合は、支持片とアノード電極との間にシムを入れることによりアノード電極を僅かに持ち上げて電極間距離を微調整していた。 In the case of the above-described known plasma processing apparatus, particularly, the cathode electrode may warp downward in the center due to its own weight, or may warp downward or upward in the center due to long-term use. In some cases, the distance between the electrodes in the center is finely adjusted to be within the desired range before the plasma treatment.
Specifically, when the cathode electrode warps downward, a thin metal piece called shim is inserted between the support piece and the cathode electrode to slightly lift the cathode electrode and finely adjust the distance between the electrodes. When the electrode warps upward, the distance between the electrodes is finely adjusted by slightly raising the anode electrode by inserting a shim between the support piece and the anode electrode.

しかしながら、これらの電極は大重量（例えば10〜100Ｋｇ）であるため、電極を持ち上げて各支持片との間にシムを入れる作業は重労働で危険を伴うと共に、電極中央部の電極間距離を測定しながら行うため作業効率が悪く煩雑であった。なお、アノード電極は、基板を安定的に支持するために一般的にカソード電極よりも剛性を大きくして作製されており、反りは生じにくい。   However, since these electrodes are heavy (for example, 10 to 100 kg), the work of lifting the electrodes and inserting shims between the support pieces is laborious and dangerous, and the distance between the electrodes at the center of the electrode is measured. However, the work efficiency was poor and complicated. Note that the anode electrode is generally made with a rigidity higher than that of the cathode electrode in order to stably support the substrate, and warpage is unlikely to occur.

本発明は、このような課題に鑑みなされたものであり、電極間距離の微調整を容易かつ効率的に行うことができるプラズマ処理装置を提供することを目的とする。   The present invention has been made in view of such problems, and an object thereof is to provide a plasma processing apparatus capable of easily and efficiently performing fine adjustment of the interelectrode distance.

かくして、本発明によれば、チャンバーと、チャンバー内に配置されてプラズマ放電を発生させる平板形の第１電極および第２電極と、第１電極と第２電極を平行に対向してそれぞれ支持する第１支持部および第２支持部と、第１および第２支持部にて支持された第１電極と第２電極を相対的にねじで移動させて電極間距離を微調整する微調整機構とを備えたプラズマ処理装置が提供される。   Thus, according to the present invention, the chamber, the flat plate-shaped first electrode and the second electrode that are disposed in the chamber and generate plasma discharge, and the first electrode and the second electrode are supported in parallel with each other. A fine adjustment mechanism that finely adjusts the distance between the electrodes by relatively moving the first electrode and the second electrode supported by the first support portion and the second support portion with screws; Is provided.

本発明のプラズマ処理装置によれば、例えば、第１電極が第２電極側または第２電極と反対側に反った場合でも、微調整機構によって第１電極と第２電極を相対的にねじで移動させてプラズマ処理に最適な電極間距離に微調整することができるため、被処理基板に対して高精度な成膜またはエッチング処理を行うことができる。   According to the plasma processing apparatus of the present invention, for example, even when the first electrode warps to the second electrode side or the opposite side to the second electrode, the first electrode and the second electrode are relatively screwed by the fine adjustment mechanism. Since the distance between the electrodes can be finely adjusted so as to be optimal for plasma processing, highly accurate film formation or etching processing can be performed on the substrate to be processed.

図１は本発明に係るプラズマ処理装置の実施形態１を示す正面から見た構成図である。FIG. 1 is a configuration diagram seen from the front showing Embodiment 1 of a plasma processing apparatus according to the present invention. 図２は実施形態１のプラズマ処理装置における第１電極の平面図である。FIG. 2 is a plan view of the first electrode in the plasma processing apparatus of the first embodiment. 図３は実施形態１のプラズマ処理装置における微調整機構によって電極間距離を微調整する状態を示す説明図である。FIG. 3 is an explanatory view showing a state in which the distance between the electrodes is finely adjusted by the fine adjustment mechanism in the plasma processing apparatus of the first embodiment. 図４は実施形態１のプラズマ処理装置における微調整機構によって電極間距離を微調整する別の状態を示す説明図である。FIG. 4 is an explanatory view showing another state in which the distance between the electrodes is finely adjusted by the fine adjustment mechanism in the plasma processing apparatus of the first embodiment. 図５は本発明に係るプラズマ処理装置の実施形態２における微調整機構によって電極間距離を微調整する状態を示す説明図である。FIG. 5 is an explanatory view showing a state in which the distance between the electrodes is finely adjusted by the fine adjustment mechanism in the second embodiment of the plasma processing apparatus according to the present invention. 図６は本発明に係るプラズマ処理装置の実施形態３を示す正面から見た構成図である。FIG. 6 is a configuration diagram seen from the front showing Embodiment 3 of the plasma processing apparatus according to the present invention. 図７は実施形態３のプラズマ処理装置における微調整機構を正面から見た部分断面図である。FIG. 7 is a partial cross-sectional view of the fine adjustment mechanism in the plasma processing apparatus of Embodiment 3 as viewed from the front. 図８は実施形態３のプラズマ処理装置における微調整機構を右側から見た部分断面図である。FIG. 8 is a partial cross-sectional view of the fine adjustment mechanism in the plasma processing apparatus of Embodiment 3 as viewed from the right side. 図９は本発明のプラズマ処理装置の実施形態４を示す正面から見た構成図である。FIG. 9 is a structural view seen from the front showing Embodiment 4 of the plasma processing apparatus of the present invention. 図１０は実施形態４のプラズマ処理装置の一側面から見た内部構成図である。FIG. 10 is an internal configuration diagram seen from one side of the plasma processing apparatus of the fourth embodiment. 図１１は図１０における電極が無い状態の内部構成図である。FIG. 11 is an internal configuration diagram in a state where there is no electrode in FIG. 図１２は実施形態４のプラズマ処理装置の上方から見た内部構成図である。FIG. 12 is an internal configuration diagram of the plasma processing apparatus according to the fourth embodiment viewed from above. 図１３は実施形態４における固定片と支持片との位置関係を説明する図である。FIG. 13 is a diagram illustrating the positional relationship between the fixed piece and the support piece in the fourth embodiment. 図１４は実施形態４における第１電極が昇降する状態を示す説明図である。FIG. 14 is an explanatory view showing a state in which the first electrode in the fourth embodiment moves up and down. 図１５は本発明のプラズマ処理装置の実施形態５における第２電極が昇降する状態を示す説明図である。FIG. 15 is an explanatory view showing a state where the second electrode moves up and down in the fifth embodiment of the plasma processing apparatus of the present invention. 図１６は本発明のプラズマ処理装置の実施形態６を示す正面から見た構成図である。FIG. 16 is a structural view seen from the front showing Embodiment 6 of the plasma processing apparatus of the present invention. 図１７は本発明の実施形態６の一側面から見た内部構成図である。FIG. 17 is an internal configuration diagram viewed from one side of the sixth embodiment of the present invention. 図１８は本発明の実施形態６の上方から見た内部構成図である。FIG. 18 is an internal configuration diagram of the sixth embodiment of the present invention viewed from above. 図１９は本発明の実施形態６における第１電極が水平方向に移動する状態を示す説明図である。FIG. 19 is an explanatory diagram showing a state where the first electrode in the sixth embodiment of the present invention moves in the horizontal direction.

本発明のプラズマ処理装置は、チャンバーと、チャンバー内に配置されてプラズマ放電を発生させる平板形の第１電極および第２電極と、第１電極と第２電極を平行に対向してそれぞれ支持する第１支持部および第２支持部と、第１および第２支持部にて支持された第１電極と第２電極を相対的にねじで移動させて電極間距離を微調整する微調整機構とを備えたことを特徴とする。   The plasma processing apparatus of the present invention supports a chamber, flat plate-like first and second electrodes disposed in the chamber and generating plasma discharge, and a first electrode and a second electrode facing each other in parallel. A fine adjustment mechanism that finely adjusts the distance between the electrodes by relatively moving the first electrode and the second electrode supported by the first support portion and the second support portion with screws; It is provided with.

本発明のプラズマ処理装置は、第１電極と第２電極がチャンバー内に水平対向状に配置された横型プラズマ処理装置および第１電極と第２電極がチャンバー内に垂直対向状に配置された縦型プラズマ処理装置の両方に適用可能であり、かつ、基板を支持する電極が接地される成膜用プラズマ処理装置および基板を支持する電極に高周波電力が投入されるエッチング用プラズマ処理装置の両方に適用可能である。   The plasma processing apparatus of the present invention includes a horizontal plasma processing apparatus in which a first electrode and a second electrode are disposed in a horizontally opposed manner in a chamber, and a vertical plasma apparatus in which the first electrode and the second electrode are disposed in a vertically opposed manner in a chamber. The present invention is applicable to both of a plasma processing apparatus for film formation in which an electrode supporting a substrate is grounded and an etching plasma processing apparatus in which high-frequency power is applied to an electrode supporting a substrate. Applicable.

このプラズマ処理装置において、プラズマを発生させる第１電極と第２電極からなる電極対の数は特に限定されず、１対でも２対以上でもよい。
さらに、このプラズマ処理装置は、第１電極と第２電極を相対的に対向方向に移動させる移動手段を備えていてもよい。この場合、移動手段によって第１電極と第２電極を相対的に移動させることができる距離は、微調整機構によって第１電極と第２電極の間の電極間距離を微調整できる距離よりも大きい。 In this plasma processing apparatus, the number of electrode pairs composed of the first electrode and the second electrode for generating plasma is not particularly limited, and may be one pair or two or more pairs.
Further, the plasma processing apparatus may include a moving unit that relatively moves the first electrode and the second electrode in the facing direction. In this case, the distance by which the first electrode and the second electrode can be relatively moved by the moving means is larger than the distance by which the distance between the first electrode and the second electrode can be finely adjusted by the fine adjustment mechanism. .

プラズマ処理装置が前記移動手段を備えない場合、第１および第２支持部は、チャンバーの内壁面またはチャンバー内に設けられた固定部材に固定される。また、プラズマ処理装置が前記移動手段を備える場合は、第１および第２支持部の一方がチャンバー側に固定され、他方が移動手段側に固定される。
これらの場合、第１および第２支持部は、第１および第２電極を平行に対向して支持できる構成であれば特に限定されず、各電極の外周縁を部分的に支持しても全体的に支持してもよく、部分的に支持する場合は複数設けられてもよい。 When the plasma processing apparatus does not include the moving means, the first and second support portions are fixed to an inner wall surface of the chamber or a fixing member provided in the chamber. When the plasma processing apparatus includes the moving means, one of the first and second support portions is fixed to the chamber side and the other is fixed to the moving means side.
In these cases, the first and second support portions are not particularly limited as long as the first and second electrodes can be supported in parallel with each other, and even if the outer peripheral edge of each electrode is partially supported, It may be supported in a partial manner, or in the case of partial support, a plurality may be provided.

これら各種のプラズマ処理装置において、微調整機構は、第１電極と第２電極の少なくとも一方を移動させるように、第１電極と第２電極の少なくとも一方に設けられ、第１電極と第２電極の両方を移動させるよう両方に設けられてもよい。電極の反りによって電極間距離が所望の範囲よりも小さくなる場合と大きくなる場合の両方で微調整できることから、微調整機構は、第１電極と第２電極の両方を移動させるように設けられることが好ましい。
あるいは、微調整機構は、第１支持部と第２支持部の少なくとも一方を移動させるように、第１支持部と第２支持部の少なくとも一方に設けられ、第１支持部と第２支持部の両方を移動させるよう両方に設けられてもよい。
以下、図面を参照しながら、本発明に係るプラズマ処理の各種の実施形態について具体的に説明する。 In these various plasma processing apparatuses, the fine adjustment mechanism is provided on at least one of the first electrode and the second electrode so as to move at least one of the first electrode and the second electrode. Both may be provided to move both. The fine adjustment mechanism should be provided to move both the first electrode and the second electrode because the distance between the electrodes can be finely adjusted both when it becomes smaller and larger than the desired range due to the warp of the electrodes. Is preferred.
Alternatively, the fine adjustment mechanism is provided in at least one of the first support portion and the second support portion so as to move at least one of the first support portion and the second support portion, and the first support portion and the second support portion. Both may be provided to move both.
Hereinafter, various embodiments of the plasma processing according to the present invention will be specifically described with reference to the drawings.

（実施形態１）
図１は本発明に係るプラズマ処理装置の実施形態１を示す正面から見た構成図であり、図２は実施形態１のプラズマ処理装置における第１電極の平面図であり、図３は実施形態１のプラズマ処理装置における微調整機構によって電極間距離を微調整する状態を示す説明図であり、図４は実施形態１のプラズマ処理装置における微調整機構によって電極間距離を微調整する別の状態を示す説明図である。 (Embodiment 1)
FIG. 1 is a configuration diagram viewed from the front showing Embodiment 1 of the plasma processing apparatus according to the present invention, FIG. 2 is a plan view of a first electrode in the plasma processing apparatus of Embodiment 1, and FIG. FIG. 4 is an explanatory diagram showing a state in which the distance between the electrodes is finely adjusted by the fine adjustment mechanism in the plasma processing apparatus of FIG. 1, and FIG. 4 is another state in which the distance between the electrodes is finely adjusted by the fine adjustment mechanism in the plasma processing apparatus of Embodiment 1; It is explanatory drawing which shows.

このプラズマ処理装置は横型成膜用プラズマ処理装置であり、図１に示すように、反応室Ｒを構成するチャンバーＭ１と、チャンバーＭ１内に配置されてプラズマ放電を発生させる平板形の第１電極１１ｅおよび第２電極１２ｅと、第１電極１１ｅと第２電極１２ｅを平行かつ水平に対向してそれぞれ支持する第１支持部１３および第２支持部１４と、第１および第２支持部１３、１４にて支持された第１電極１１ｅと第２電極１２ｅを相対的にねじで移動させて電極間距離Ｌ１を微調整する微調整機構Ａと、第１電極１１ｅを介して電極間に矢印で示す反応ガスＧ１を導入するガス導入管１５と、反応室Ｒから反応ガスＧ１を排気する排気部６と、第１電極１１ｅに電力を供給する電源部Ｅと、第２電極１２ｅを接地する接地部材１７とを備える。   This plasma processing apparatus is a horizontal film forming plasma processing apparatus. As shown in FIG. 1, a chamber M1 constituting a reaction chamber R, and a flat plate-shaped first electrode that is disposed in the chamber M1 and generates plasma discharge. 11e and the second electrode 12e, a first support part 13 and a second support part 14 for supporting the first electrode 11e and the second electrode 12e in parallel and horizontally oppositely, respectively, a first and a second support part 13, The first electrode 11e and the second electrode 12e supported at 14 are relatively moved by screws to finely adjust the interelectrode distance L1, and the arrow between the electrodes via the first electrode 11e. A gas introduction pipe 15 for introducing the reaction gas G1 shown, an exhaust part 6 for exhausting the reaction gas G1 from the reaction chamber R, a power supply part E for supplying power to the first electrode 11e, and a ground for grounding the second electrode 12e Member 17 and Obtain.

実施形態１では、第１電極１１ｅがカソード電極であり、第２電極１２ｅがアノード電極であり、第２電極１２ｅ上に被処理物である基板Ｓが設置され、基板Ｓの表面に所定の膜が成膜される。また、実施形態１では、第１および第２電極１１ｅ、１２ｅの電極対が上下２段で反応室内Ｒに配置されると共に、各第１電極１１ｅおよび各第２電極１２ｅに微調整機構Ａが設けられた場合を例示している。
なお、電極対は１対または３対以上でもよい。 In the first embodiment, the first electrode 11e is a cathode electrode, the second electrode 12e is an anode electrode, a substrate S that is an object to be processed is placed on the second electrode 12e, and a predetermined film is formed on the surface of the substrate S. Is deposited. In the first embodiment, the electrode pairs of the first and second electrodes 11e and 12e are arranged in the reaction chamber R in two stages, and the fine adjustment mechanism A is provided in each first electrode 11e and each second electrode 12e. The case where it is provided is illustrated.
The electrode pair may be one pair or three or more pairs.

排気部６としては、真空ポンプ６ａ、真空ポンプ６ａと反応室Ｒとを接続する排気管６ｂおよび排気管６ｂにおける反応室Ｒと真空ポンプ６ａとの間に配置された圧力制御器６ｃとを備える。
電源部Ｅは、例えば、ＡＭ１．００ＭＨｚ〜６０ＭＨｚの周波数で１０Ｗ〜１００ｋＷの電力、具体的には、１３．５６ＭＨｚ〜６０ＭＨｚで１０Ｗ〜１０ｋＷの電力を発生して各第１電極１１ｅに供給するプラズマ励起電源であり、高周波発生器Ｅ1と、各第１電極１１ｅに均等な電力を供給するためのインピーダンス整合器Ｅ2と、これらを各第１電極１１ｅの給電箇所に接続する給電ケーブルＥ3とを備え、図示しない増幅器をさらに備えていてもよい。 The exhaust unit 6 includes a vacuum pump 6a, an exhaust pipe 6b connecting the vacuum pump 6a and the reaction chamber R, and a pressure controller 6c disposed between the reaction chamber R and the vacuum pump 6a in the exhaust pipe 6b. .
The power supply unit E generates, for example, 10 W to 100 kW of power at a frequency of AM 1.00 MHz to 60 MHz, specifically, 10 W to 10 kW of power at 13.56 MHz to 60 MHz, and supplies the power to each first electrode 11e. an excitation source, a high frequency generator E 1, an impedance matching device E 2 for supplying uniform power to each first electrode 11e, power supply cable E 3 that connects them to the feed portion of the first electrode 11e And an amplifier (not shown) may be further provided.

図１および図２に示すように、第１電極（カソード電極）１１ｅは、長方形であり、ステンレス鋼やアルミニウム合金などから作製される。第１電極１１ｅの寸法は、成膜を行う基板Ｓの寸法に合わせて適当な値に設定され、第２電極１２ｅよりも僅かに大きい平面サイズおよび第２電極１２ｅと同じ厚みで設計されることができる。なお、微調整機構Ａは、第１電極１１ｅの４つの角部の近傍にそれぞれ設けられており、詳しくは後述する。
第１電極１１ｅは、内部が空洞であると共に、対となる第２電極１２ｅに面するプラズマ放電面には多数の貫通穴が穴明け加工により明けられている。この穴明け加工は、直径０．１ｍｍ〜２ｍｍの円形穴を数ｍｍ〜数ｃｍピッチで行うのが望ましい。
また、第１電極１１ｅの一端面には、図示しないガス供給源と接続された前記ガス導入管１５が接続されており、反応ガスＧ１がガス供給源から第１電極１１ｅの内部に供給され、多数の貫通穴から基板Ｓの表面に向かって噴出するように構成されている。なお、原料ガスとしては、例えば、Ｈ2で希釈したＳｉＨ4（モノシラン）ガスが使用される。 As shown in FIGS. 1 and 2, the first electrode (cathode electrode) 11e has a rectangular shape and is made of stainless steel, aluminum alloy, or the like. The dimension of the first electrode 11e is set to an appropriate value in accordance with the dimension of the substrate S on which the film is formed, and is designed with a slightly larger planar size than the second electrode 12e and the same thickness as the second electrode 12e. Can do. The fine adjustment mechanism A is provided in the vicinity of the four corners of the first electrode 11e, which will be described in detail later.
The first electrode 11e has a hollow inside, and a number of through holes are formed in the plasma discharge surface facing the paired second electrode 12e by drilling. In this drilling process, it is desirable to perform circular holes with a diameter of 0.1 mm to 2 mm at a pitch of several mm to several cm.
In addition, the gas introduction pipe 15 connected to a gas supply source (not shown) is connected to one end face of the first electrode 11e, and the reactive gas G1 is supplied from the gas supply source to the inside of the first electrode 11e. It is configured to eject from a large number of through holes toward the surface of the substrate S. As the source gas, for example, SiH 4 (monosilane) gas diluted with H 2 is used.

第１電極１１ｅの下方に配置される第２電極（アノード電極）１２ｅは、長方形であり、内部に図示しないヒータを有すると共に、上面に基板Ｓが設置され、プラズマ放電下の成膜時に基板Ｓ（例えばシリコン基板、ガラス基板等）を加熱する。なお、第２電極１２ｅの４つの角部の近傍にも、微調整機構Ａがそれぞれ設けられており、詳しくは後述する。
また、第２電極１２ｅは、ステンレス鋼、アルミニウム合金、カーボンなどの、導電性および耐熱性を備えた材料で製作されている。
第２電極１２ｅの寸法は、薄膜を形成するための基板Ｓの寸法に合わせて適当な値に決定されている。例えば、基板Ｓの寸法９００〜１２００ｍｍ×４００〜９００ｍｍに対して、第２電極１２ｅの寸法を１０００〜１５００ｍｍ×６００〜１０００ｍｍにして設計される。
第２電極１２ｅに内蔵されたヒータは、第２電極１２ｅを室温〜３００℃に加熱制御するものであり、例えば、アルミニウム合金中にシースヒータなどの密閉型加熱装置と熱電対などの密閉型温度センサとを内蔵したものを用いることができる。 The second electrode (anode electrode) 12e disposed below the first electrode 11e has a rectangular shape, has a heater (not shown) inside, and has a substrate S installed on the upper surface, and the substrate S is formed during film formation under plasma discharge. (For example, a silicon substrate, a glass substrate, or the like) is heated. Note that fine adjustment mechanisms A are also provided in the vicinity of the four corners of the second electrode 12e, which will be described in detail later.
The second electrode 12e is made of a material having conductivity and heat resistance, such as stainless steel, aluminum alloy, and carbon.
The dimension of the second electrode 12e is determined to an appropriate value according to the dimension of the substrate S for forming the thin film. For example, the size of the second electrode 12e is designed to be 1000 to 1500 mm × 600 to 1000 mm with respect to the size of the substrate S of 900 to 1200 mm × 400 to 900 mm.
The heater built in the second electrode 12e controls the heating of the second electrode 12e to room temperature to 300 ° C. For example, a sealed heating device such as a sheathed heater and a sealed temperature sensor such as a thermocouple in an aluminum alloy. Can be used.

図１および図３に示すように、第１および第２支持部１３、１４は、第１および第２電極１１ｅ、１２ｅの外周縁を部分的に支持するようそれぞれ複数設けられると共に、第１および第２電極１１ｅ、１２ｅを水平に支持する水平片部１３ａ、１４ａを有している。
具体的に、第１支持部１３は、板状であり、第１電極１１ｅの外周縁の四つ角近傍に設けられた微調整機構Ａに対応する位置に配置されるよう、チャンバーＭ１の内壁面に固定されており、その先端側には上面側を厚み略半分切り欠いて形成した第１電極１１ｅを水平状に支持するための水平片部１３ａを有している。
第２支持部１４も、板状であり、第２電極１２ｅの外周縁の四つ角近傍に設けられた微調整機構Ａに対応する位置に配置されるよう、チャンバーＭ１の内壁面に固定されており、その先端側には上面側を厚み略半分切り欠いて形成した第２電極１２ｅを水平状に支持するための水平片部１４ａを有している。 As shown in FIGS. 1 and 3, a plurality of first and second support portions 13 and 14 are provided to partially support the outer peripheral edges of the first and second electrodes 11e and 12e, respectively. It has horizontal pieces 13a and 14a that horizontally support the second electrodes 11e and 12e.
Specifically, the first support portion 13 has a plate shape, and is disposed on the inner wall surface of the chamber M1 so as to be disposed at a position corresponding to the fine adjustment mechanism A provided in the vicinity of the four corners of the outer peripheral edge of the first electrode 11e. It is fixed, and has a horizontal piece portion 13a for horizontally supporting the first electrode 11e formed by cutting out the upper surface side by substantially half the thickness at the tip end side.
The second support portion 14 is also plate-shaped and is fixed to the inner wall surface of the chamber M1 so as to be disposed at a position corresponding to the fine adjustment mechanism A provided in the vicinity of the four corners of the outer peripheral edge of the second electrode 12e. The top end side has a horizontal piece portion 14a for horizontally supporting the second electrode 12e formed by cutting out the upper surface side by substantially half the thickness.

これら上下の水平片部１３ａ、１４ａは、第１および第２電極１１ｅ、１２ｅを支持した状態のときに電極間距離Ｌ１が成膜に最適な距離範囲となる位置に配置されている。以下、成膜に最適な電極間の距離範囲を最適距離と称する。
ところで、チャンバーＭ１内に複数組の電極対が存在する場合、各電極対でのプラズマ放電が相互に干渉する原因は、特に、電源部Ｅと同一の電気系統を介してそれぞれ接続される電極対同士の距離Ｌ２に関係しており、これらの電極対の距離Ｌ２が短くなると電力を均等に分岐できなくなり、その結果各プラズマ放電が干渉する。そのため、各電極対における第１電極（カソード電極）１１ｅと第２電極（アノード電極）１２ｅとの間の電極間距離Ｌ１に対して距離Ｌ２が２倍以上（Ｌ２／Ｌ１≧２）となるように設定されている。例えば、電極間距離Ｌ１は２〜３０ｍｍに設定され、距離Ｌ２は４〜６０ｍｍ以上に設定される。なお、面内における電極間距離Ｌ１の精度は、数％以内であることが好ましく、１％以下であること特に好ましい。
したがって、上段側の第２電極１２ｅと下段側の第１電極１１ｅとの間隔Ｌ２が４〜６０ｍｍとなる位置に、上段側の水平片部１４ａと下段側の水平片部１３ａが配置される。
なお、板状の第１および第２支持部１３、１４は、チャンバーＭ１の内壁面に固定する以外に、チャンバーＭ１内に設けられた固定部材に固定されてもよい。 These upper and lower horizontal pieces 13a and 14a are arranged at positions where the interelectrode distance L1 is an optimum distance range for film formation when the first and second electrodes 11e and 12e are supported. Hereinafter, the distance range between the electrodes that is optimal for film formation is referred to as the optimum distance.
By the way, when there are a plurality of electrode pairs in the chamber M1, the cause of the plasma discharge in each electrode pair interfering with each other is in particular the electrode pair connected via the same electrical system as the power supply unit E. It is related to the distance L2 between the electrodes, and when the distance L2 between these electrode pairs is shortened, the power cannot be evenly branched, and as a result, each plasma discharge interferes. Therefore, the distance L2 is more than twice (L2 / L1 ≧ 2) with respect to the interelectrode distance L1 between the first electrode (cathode electrode) 11e and the second electrode (anode electrode) 12e in each electrode pair. Is set to For example, the interelectrode distance L1 is set to 2 to 30 mm, and the distance L2 is set to 4 to 60 mm or more. In addition, the accuracy of the inter-electrode distance L1 in the plane is preferably within several percent, and particularly preferably 1% or less.
Accordingly, the upper horizontal piece 14a and the lower horizontal piece 13a are arranged at a position where the distance L2 between the upper second electrode 12e and the lower first electrode 11e is 4 to 60 mm.
The plate-like first and second support portions 13 and 14 may be fixed to a fixing member provided in the chamber M1 in addition to fixing to the inner wall surface of the chamber M1.

図１〜図３に示すように、第１電極１１ｅに設けられた微調整機構Ａは、第１電極１１ｅにおける各第１支持部１３の水平片部１３ａとの対向位置を垂直方向に貫通するネジ孔ａ11を有するネジ孔部ａ1と、水平片部１３ａと当接可能なようにネジ孔ａ11に螺着されたボルト部材ａ2とを備えたボルト機構である。
第２電極１２ｅに設けられた微調整機構Ａも同様に、第２電極１２ｅにおける各第２支持部１４の水平片部１４ａとの対向位置を垂直方向に貫通するネジ孔ａ11を有するネジ孔部ａ1と、水平片部１４ａと当接可能なようにネジ孔ａ11に螺着されたボルト部材ａ2とを備えたボルト機構である。 As shown in FIGS. 1 to 3, the fine adjustment mechanism A provided in the first electrode 11 e vertically penetrates a position of the first electrode 11 e facing the horizontal piece portion 13 a of each first support portion 13. The bolt mechanism includes a screw hole a 1 having a screw hole a 11 and a bolt member a 2 screwed into the screw hole a 11 so as to be able to contact the horizontal piece 13a.
Similarly fine adjustment mechanism A provided on the second electrode 12e, a screw having a screw hole a 11 penetrating the position facing the horizontal plate portion 14a of the second support portion 14 of the second electrode 12e in the vertical direction hole This is a bolt mechanism including a portion a 1 and a bolt member a 2 screwed into the screw hole a 11 so as to be able to contact the horizontal piece portion 14a.

微調整機構Ａのネジ孔部ａ1は、第１および第２電極１１ｅ、１２ｅの四つ角近傍の長辺部分に連設された突出片に前記ネジ孔ａ11が形成されてなる。また、微調整機構Ａのボルト部材ａ2は、上端のヘッド部の上面に、例えば六角形凹部のような多角形凹部が形成されている。初期状態では、第１および第２電極１１ｅ、１２ｅの各ネジ孔部ａ1の下面が水平片部１３ａ、１４ａの上面に当接している。
この微調整機構Ａは、次のようにボルト部材ａ2を垂直方向に螺進退させることにより、第１電極１１ｅと第２電極１２ｅを相対的に垂直方向に移動させて電極間距離Ｌ１を微調整することができる。 The screw hole a 1 of the fine adjustment mechanism A is formed by forming the screw hole a 11 in a protruding piece connected to the long side portion in the vicinity of the four corners of the first and second electrodes 11e and 12e. Further, the bolt member a 2 of the fine adjustment mechanism A has a polygonal recess such as a hexagonal recess formed on the upper surface of the upper head portion. In the initial state, the first and second electrodes 11e, the lower surface of each screw hole portions a 1 of 12e in contact with the upper surface of the horizontal plate portion 13a, 14a.
The fine adjustment mechanism A is, by threadedly advancing and retracting the bolt a 2 in the vertical direction as follows: the inter-electrode distance L1 by moving the first electrode 11e and the second electrode 12e relative vertical fine Can be adjusted.

例えば、第１電極１１ｅの中央部が下方へ反っている場合、第１電極１１ｅの中央部から第２電極１２ｅの中央部までの電極間距離Ｌ１が最適距離よりも狭くなってしまうことがある。
このような場合、図３に示すように、成膜プロセスを開始する前に、例えば、第１電極１１ｅ側の六角形凹部に六角レンチを差し込んでボルト部材ａ2を回し、ボルト部材ａ2の先端（下端）が水平片部１３ａに当接した状態のまま第１電極１１ｅに対してボルト部材ａ2をねじ込むことにより、第１電極１１ｅにおける微調整機構Ａの近傍部分（角部近傍部分）が上方へ移動する。
この際、第１電極１１ｅの中央部から第２電極１２ｅの中央部までの電極間距離Ｌ１が最適距離内となるように、１箇所以上の微調整機構Ａによって電極間距離Ｌ１を広げる微調整を行う。 For example, when the central portion of the first electrode 11e is warped downward, the inter-electrode distance L1 from the central portion of the first electrode 11e to the central portion of the second electrode 12e may be narrower than the optimum distance. .
In this case, as shown in FIG. 3, before starting the deposition process, for example, turning the bolt member a 2 by inserting a hexagon wrench in the hexagonal recess of the first electrode 11e side, the bolt member a 2 tip by screwing the bolt member a 2 with respect to the first electrode 11e remain (lower end) is in contact with the horizontal plate portion 13a, adjacent portion (corner portion near) the fine adjustment mechanism a in the first electrode 11e Moves upward.
At this time, the fine adjustment that increases the interelectrode distance L1 by one or more fine adjustment mechanisms A so that the interelectrode distance L1 from the central portion of the first electrode 11e to the central portion of the second electrode 12e is within the optimum distance. I do.

また、第１電極１１ｅの中央部が上方へ反っている場合、第１電極１１ｅの中央部から第２電極１２ｅの中央部までの電極間距離Ｌ１が最適距離よりも広くなってしまうことがある。
このような場合、図４に示すように、成膜プロセスを開始する前に、例えば、第２電極１２ｅ側の六角形凹部に六角レンチを差し込んでボルト部材ａ2を回し、ボルト部材ａ2の先端（下端）が水平片部１４ａに当接した状態で第２電極１２ｅに対してボルト部材ａ2をねじ込むことにより、第２電極１２ｅにおける微調整機構Ａの近傍部分（角部近傍部分）が上方へ移動する。
この際、第１電極１１ｅの中央部から第２電極１２ｅの中央部までの電極間距離Ｌ１が最適距離内となるように、１箇所以上の微調整機構Ａによって電極間距離Ｌ１を狭める微調整を行う。 Further, when the central portion of the first electrode 11e is warped upward, the inter-electrode distance L1 from the central portion of the first electrode 11e to the central portion of the second electrode 12e may be larger than the optimum distance. .
In this case, as shown in FIG. 4, before starting the deposition process, for example, turning the bolt member a 2 by inserting a hexagon wrench in the hexagonal recess in the second electrode 12e side, the bolt member a 2 by screwing the bolt member a 2 with respect to the second electrode 12e in a state where the top end (lower end) is in contact with the horizontal plate portion 14a, the portion near the fine adjustment mechanism a in the second electrode 12e (corner near portion) Move upward.
At this time, the fine adjustment by which the interelectrode distance L1 is narrowed by one or more fine adjustment mechanisms A so that the interelectrode distance L1 from the central portion of the first electrode 11e to the central portion of the second electrode 12e is within the optimum distance. I do.

図３と図４で示した微調整の場合、第１電極１１ｅと第２電極１２ｅとの平行度を高くするためには、４箇所の微調整機構Ａにおけるボルト部材ａ2の突出量を揃えることが好ましい。ボルト部材ａ2の突出量は、ボルト部材ａ2のねじピッチおよび回転量によって決まるため、ボルト部材ａ2の回転量によって突出量が予測できる。
なお、第１電極１１ｅは上方へ反ることがないのであれば、第２電極１２ｅ側の微調整機構Ａを省略してもよく、第１電極１１ｅは下方へ反ることがないのであれば、第１電極１１ｅ側の微調整機構Ａを省略してもよい。
このように構成された微調整機構によれば、成膜時に特に重要な電極中央部の電極間距離Ｌ１を高精度に最適距離内に微調整することができるため、基板Ｓ上に均一な膜厚で成膜することが可能となる。また、微調整機構Ａをボルト機構で構成することにより、構造が簡素化され、低コストにて容易に作製することができる。
なお、電極間距離Ｌ１の測定方法は、ｍｍ単位以下での測定が可能な方法であれば特に限定されるものではない。 For fine adjustment shown in FIGS. 3 and 4, in order to increase the parallelism between the first electrode 11e and the second electrode 12e aligns the projecting amount of the bolt member a 2 in the fine adjustment mechanism A four positions It is preferable. The amount of projection of the bolt member a 2, since depends thread pitch and the amount of rotation of the bolt member a 2, can be predicted amount of projection by rotation of the bolt member a 2.
If the first electrode 11e does not warp upward, the fine adjustment mechanism A on the second electrode 12e side may be omitted, and if the first electrode 11e does not warp downward. The fine adjustment mechanism A on the first electrode 11e side may be omitted.
According to the fine adjustment mechanism configured as described above, the inter-electrode distance L1 at the center of the electrode, which is particularly important at the time of film formation, can be finely adjusted within the optimum distance with high accuracy. It is possible to form a film with a thickness. Further, by configuring the fine adjustment mechanism A with a bolt mechanism, the structure is simplified and the fine adjustment mechanism A can be easily manufactured at low cost.
In addition, the measuring method of the distance L1 between electrodes will not be specifically limited if it is a method in which the measurement in a mm unit or less is possible.

（実施形態２）
図５は本発明に係るプラズマ処理装置の実施形態２における微調整機構によって電極間距離を微調整する状態を示す説明図である。
実施形態２が実施形態１と異なる点は、第１電極２１ｅ、第２電極２２ｅ、第１支持部２３、第２支持部２４および微調整機構Ｂ１、Ｂ２の構成であり、実施形態２におけるその他の構成は実施形態１と同様である。
以下、実施形態２における実施形態１と異なる点を主に説明する。 (Embodiment 2)
FIG. 5 is an explanatory view showing a state in which the distance between the electrodes is finely adjusted by the fine adjustment mechanism in the second embodiment of the plasma processing apparatus according to the present invention.
The second embodiment differs from the first embodiment in the configuration of the first electrode 21e, the second electrode 22e, the first support portion 23, the second support portion 24, and the fine adjustment mechanisms B1 and B2, and the others in the second embodiment. The configuration is the same as that of the first embodiment.
Hereinafter, differences from the first embodiment in the second embodiment will be mainly described.

実施形態２の場合、第１および第２支持部２３、２４は、第１および第２電極２１ｅ、２２ｅの外周縁を部分的に支持するようそれぞれ複数設けられると共に、第１および第２電極２１ｅ、２２ｅを水平に支持する水平片部を有し、さらに、第１支持部２３および第２支持部２４の両方が微調整機構Ｂ１、Ｂ２を有している。   In the second embodiment, a plurality of first and second support portions 23 and 24 are provided to partially support the outer peripheral edges of the first and second electrodes 21e and 22e, and the first and second electrodes 21e. , 22e are horizontally supported, and both the first support portion 23 and the second support portion 24 have fine adjustment mechanisms B1, B2.

第１および第２電極２１ｅ、２２ｅは、実施形態１の第１および第２電極１１ｅ、１２ｅのねじ孔部ａ1と同じ位置に突出片２１ｅ1、２２ｅ1を有しており、各突出片２１ｅ1、２１ｅ1の下面には、先端から電極側に向かって降下する傾斜面２１ｅ2、２２ｅ2が形成されている。 The first and second electrodes 21e and 22e have projecting pieces 21e 1 and 22e 1 at the same positions as the screw hole portions a 1 of the first and second electrodes 11e and 12e of the first embodiment. On the lower surfaces of 21e 1 and 21e 1 , inclined surfaces 21e 2 and 22e 2 descending from the tip toward the electrode side are formed.

第１支持部２３は、図示しないチャンバーの内壁面に固定された板状基端部２３ａと、板状基端部２３ａの先端に連設された垂下片部２３ｂと、垂下片部２３ｂの下端に連設された水平片部２３ｃと、微調整機構Ｂ１とから構成されている。
第２支持部２４は、図示しないチャンバーの内壁面に固定された水平片部２４ａと、微調整機構Ｂ２とから構成されている。
これら上下の水平片部２３ｃ、２４ａは、第１および第２電極２１ｅ、２２ｅを支持した状態のときに電極間距離Ｌ１（図１参照）が成膜に最適な距離範囲となる位置に配置されている。 The first support portion 23 includes a plate-like base end portion 23a fixed to an inner wall surface of a chamber (not shown), a hanging piece portion 23b connected to the tip of the plate-like base end portion 23a, and a lower end of the hanging piece portion 23b. Is formed of a horizontal piece 23c provided continuously with the fine adjustment mechanism B1.
The 2nd support part 24 is comprised from the horizontal piece part 24a fixed to the inner wall face of the chamber which is not shown in figure, and fine adjustment mechanism B2.
These upper and lower horizontal pieces 23c and 24a are arranged at positions where the inter-electrode distance L1 (see FIG. 1) is an optimum distance range for film formation when the first and second electrodes 21e and 22e are supported. ing.

第１支持部２３の微調整機構Ｂ１は、水平片部２３ｃに固設された水平方向の貫通孔２３ｂ1を有する固定部としての前記垂下片部２３ｂと、貫通孔２３ｂ1に定位置で回転可能に挿入されたボルト部材ｂ1と、ボルト部材ｂ1に螺着するネジ孔ｂ21を有し第１電極２１ｅと水平片部２３ｃとの間に挿入され水平片部２３ｃ上で水平方向に移動可能に支持されたくさび部材ｂ2とを備えたくさび機構であり、くさび部材ｂ2は第１電極２１ｅの突出片２１ｅ1の傾斜面２１ｅ2と摺接する傾斜面ｂ22を有している。なお、ボルト部材ｂ1における貫通孔２３ｂ1の両側部分には凹周溝が形成され、各凹周溝にＣ形リングが嵌めこまれていることにより、ボルト部材ｂ1が定位置で回転可能とされている。 The fine adjustment mechanism B1 of the first support portion 23 is rotated at a fixed position in the penetrating piece portion 23b as a fixing portion having a horizontal through hole 23b 1 fixed to the horizontal piece portion 23c and the through hole 23b 1. Bolt member b 1 inserted in a possible manner and screw hole b 21 to be screwed into bolt member b 1 and inserted between first electrode 21e and horizontal piece portion 23c and horizontally on horizontal piece portion 23c The wedge mechanism includes a wedge member b 2 that is movably supported, and the wedge member b 2 has an inclined surface b 22 that is in sliding contact with the inclined surface 21e 2 of the protruding piece 21e 1 of the first electrode 21e. . Note that on both sides of the through-holes 23b 1 in the bolt member b 1 is formed concave peripheral groove, by C-shaped ring is fitted into each concave peripheral groove, the bolt member b 1 is rotatable at a fixed position It is said that.

第２支持部２４の微調整機構Ｂ２は、水平片部２４ａ上に固設された水平方向の貫通孔２４ａ1を有する固定部２４ｂと、貫通孔２４ａ1に定位置で回転可能に挿入されたボルト部材ｂ1と、ボルト部材ｂ1に螺着するネジ孔ｂ21を有し第２電極２２ｅと水平片部２４ａとの間に挿入され水平片部２４ａ上で水平方向に移動可能に支持されたくさび部材ｂ2とを備えたくさび機構であり、くさび部材ｂ2は第２電極２２ｅの突出片２２ｅ1の傾斜面２２ｅ2と摺接する傾斜面ｂ22を有している。なお、微調整機構Ｂ２のボルト部材ｂ1およびくさび部材ｂ2は微調整機構Ｂ１と同じものであり、貫通孔２４ａ1に挿入されたボルト部材ｂ1も一対のＣ形リングにより定位置で回転可能とされている。 The fine adjustment mechanism B2 of the second support part 24 is inserted into the fixing part 24b having a horizontal through hole 24a 1 fixed on the horizontal piece part 24a and rotatably in a fixed position in the through hole 24a 1 . A bolt member b 1 and a screw hole b 21 to be screwed into the bolt member b 1 are inserted between the second electrode 22e and the horizontal piece 24a and supported so as to be movable in the horizontal direction on the horizontal piece 24a. and a wedge mechanism having a wedge member b 2, the wedge member b 2 includes an inclined surface 22e 2 and the sliding contact inclined surfaces b 22 of the projecting piece 22e 1 of the second electrode 22e. The bolt member b 1 and the wedge member b 2 of the fine adjustment mechanism B2 are the same as the fine adjustment mechanism B1, and the bolt member b 1 inserted into the through hole 24a 1 is also rotated in place by a pair of C-shaped rings. It is possible.

初期状態では、第１および第２電極２１ｅ、２２ｅの突出片２１ｅ1、２２ｅ1の下面が水平片部２３ｃ、２４ａの上面に当接している（図５における第２電極２２ｅを参照）。
例えば、第１電極２１ｅの中央部が下方へ反っている場合、微調整機構Ｂ１のボルト部材ｂ1を回してくさび部材ｂ2を水平片部２３ｃ上で水平方向にスライド移動させることにより、第１電極２１ｅと第２電極２２ｅを相対的に垂直方向に移動させて電極間距離を微調整することができる。
つまり、くさび部材ｂ2を第１電極２１ｅ側に移動させることにより、くさび部材ｂ2の傾斜面ｂ22上を突出片２１ｅ1が滑り上がるため、第１電極２１ｅにおける微調整機構Ｂ１の近傍部分（角部近傍部分）が上方へ移動する（図５参照）。
この際、第１電極２１ｅの中央部から第２電極２２ｅの中央部までの電極間距離Ｌ１（図１参照）が最適距離内となるように、１箇所以上の微調整機構Ｂ１によって電極間距離Ｌ１を広げる微調整を行う。 In the initial state, the lower surfaces of the protruding pieces 21e 1 and 22e 1 of the first and second electrodes 21e and 22e are in contact with the upper surfaces of the horizontal piece portions 23c and 24a (see the second electrode 22e in FIG. 5).
For example, if the central portion of the first electrode 21e is warped downward, whereby the wedge member b 2 by turning the bolt member b 1 of the fine adjustment mechanism B1 is slid in the horizontal direction on the horizontal plate portion 23c, the The distance between the electrodes can be finely adjusted by relatively moving the first electrode 21e and the second electrode 22e in the vertical direction.
That is, by moving the wedge member b 2 to the first electrode 21e side, the protruding piece 21e 1 slides up on the inclined surface b 22 of the wedge member b 2 , so that the portion near the fine adjustment mechanism B1 in the first electrode 21e (Corner vicinity) moves upward (see FIG. 5).
At this time, the interelectrode distance is adjusted by one or more fine adjustment mechanisms B1 so that the interelectrode distance L1 (see FIG. 1) from the central portion of the first electrode 21e to the central portion of the second electrode 22e is within the optimum distance. Make fine adjustments to expand L1.

第１電極２１ｅの中央部が上方へ反っている場合は、微調整機構Ｂ２のくさび部材ｂ2を水平片部２４ａ上で第２電極２２ｅ側にスライド移動させることにより、第２電極２２ｅにおける微調整機構Ｂ２の近傍部分（角部近傍部分）を上方へ移動させ、第１電極２１ｅの中央部から第２電極２２ｅの中央部までの電極間距離Ｌ１（図１参照）が最適距離内となるように、１箇所以上の微調整機構Ｂ２によって電極間距離Ｌ１を狭める微調整を行う。 If the central portion of the first electrode 21e is warped upward, by sliding the second electrode 22e side wedge member b 2 of the fine adjustment mechanism B2 on the horizontal plate portion 24a, the fine in the second electrode 22e The vicinity of the adjustment mechanism B2 (the vicinity of the corner) is moved upward, and the interelectrode distance L1 (see FIG. 1) from the center of the first electrode 21e to the center of the second electrode 22e is within the optimum distance. Thus, the fine adjustment which narrows the distance L1 between electrodes is performed by one or more fine adjustment mechanisms B2.

これらの微調整の場合、第１電極１１ｅと第２電極１２ｅとの平行度を高くするためには、４箇所の微調整機構Ｂ１またはＢ２におけるくさび部材ｂ2の移動量を揃えることが好ましい。くさび部材ｂ2の移動量は、ボルト部材ｂ1のねじピッチおよび回転量によって決まるため、ボルト部材ｂ1の回転量によって移動量が予測できる。
なお、第１電極２１ｅは上方へ反ることがないのであれば、第２電極２２ｅ側の微調整機構Ｂ２を省略してもよく、第１電極２１ｅは下方へ反ることがないのであれば、第１電極２１ｅ側の微調整機構Ｂ１を省略してもよい。
このように構成された微調整機構Ｂ１、Ｂ２によっても、成膜時に特に重要な電極中央部の電極間距離Ｌ１を高精度に最適距離内に微調整することができるため、基板Ｓ上に均一な膜厚で成膜することが可能となる。また、微調整機構Ｂ１、Ｂ２をくさび機構で構成することにより、電極側へ微調整機構を設けなくて済むため、電極の作製コストを低減することができる。さらに、第１および第２電極２１ｅ、２２ｅの突出片２１ｅ1、２２ｅ1を省略し、各電極２１ｅ、２２ｅの外周縁の四つ角近傍に直接傾斜面片２１ｅ2、２２ｅ2を形成してもよく、これによりさらに電極の作製コストを低減することができる。 For these fine adjustments, in order to increase the parallelism between the first electrode 11e and the second electrode 12e are preferably aligned the amount of movement of the wedge member b 2 in the fine adjustment mechanism B1 or B2 of the four locations. The amount of movement of the wedge member b 2, since depends thread pitch and the amount of rotation of the bolt member b 1, can be predicted amount of movement by the rotation of the bolt member b 1.
If the first electrode 21e does not warp upward, the fine adjustment mechanism B2 on the second electrode 22e side may be omitted, and if the first electrode 21e does not warp downward. The fine adjustment mechanism B1 on the first electrode 21e side may be omitted.
Even with the fine adjustment mechanisms B1 and B2 configured as described above, the inter-electrode distance L1 at the center of the electrode, which is particularly important at the time of film formation, can be finely adjusted within the optimum distance with high accuracy. It is possible to form a film with a sufficient thickness. Further, by configuring the fine adjustment mechanisms B1 and B2 with a wedge mechanism, it is not necessary to provide a fine adjustment mechanism on the electrode side, so that the manufacturing cost of the electrode can be reduced. Further, the protruding pieces 21e 1 and 22e 1 of the first and second electrodes 21e and 22e may be omitted, and the inclined surface pieces 21e 2 and 22e 2 may be formed directly in the vicinity of the four corners of the outer peripheral edge of the electrodes 21e and 22e. Thereby, the manufacturing cost of the electrode can be further reduced.

（実施形態３）
図６は本発明に係るプラズマ処理装置の実施形態３を示す正面から見た構成図であり、図７は実施形態３のプラズマ処理装置における微調整機構を正面から見た部分断面図であり、図８は実施形態３のプラズマ処理装置における微調整機構を右側から見た部分断面図である。なお、図６において、図１中の要素と同様の要素には、同一の符号を付している。 (Embodiment 3)
FIG. 6 is a structural view seen from the front showing Embodiment 3 of the plasma processing apparatus according to the present invention, and FIG. 7 is a partial cross-sectional view seen from the front of the fine adjustment mechanism in the plasma treatment apparatus of Embodiment 3. FIG. 8 is a partial cross-sectional view of the fine adjustment mechanism in the plasma processing apparatus of Embodiment 3 as viewed from the right side. In FIG. 6, the same elements as those in FIG. 1 are denoted by the same reference numerals.

このプラズマ処理装置は縦型成膜用プラズマ処理装置であり、図６に示すように、反応室Ｒを構成するチャンバーＭ２と、チャンバーＭ２内に配置されてプラズマ放電を発生させる平板形の第１電極（カソード電極）３１ｅおよび第２電極（アノード電極）３２ｅと、第１電極３１ｅと第２電極３２ｅを平行かつ垂直に対向してそれぞれ支持する第１支持部３３および第２支持部３４と、第１および第２支持部３３、３４にて支持された第１電極３１ｅと第２電極３２ｅを相対的にねじで移動させて電極間距離Ｌ１を微調整する微調整機構Ｃと、第１電極３１ｅを介して電極間に矢印で示す反応ガスＧ１を導入するガス導入管１５と、反応室Ｒから反応ガスＧ１を排気する排気部６と、第１電極３１ｅに電力を供給する電源部Ｅと、第２電極３２ｅを接地する接地部材１７とを備える。
以下、実施形態３における実施形態１とは異なる点を主に説明する。 This plasma processing apparatus is a vertical film forming plasma processing apparatus. As shown in FIG. 6, the chamber M2 constituting the reaction chamber R and the first flat plate-shaped first gas generator disposed in the chamber M2 to generate plasma discharge. An electrode (cathode electrode) 31e and a second electrode (anode electrode) 32e; a first support portion 33 and a second support portion 34 that support the first electrode 31e and the second electrode 32e in parallel and perpendicularly oppositely; A fine adjustment mechanism C for finely adjusting the inter-electrode distance L1 by relatively moving the first electrode 31e and the second electrode 32e supported by the first and second support portions 33 and 34 with a screw; and the first electrode A gas introduction pipe 15 for introducing the reaction gas G1 indicated by an arrow between the electrodes via 31e, an exhaust part 6 for exhausting the reaction gas G1 from the reaction chamber R, and a power supply part E for supplying power to the first electrode 31e, Second electrode And a grounding member 17 for grounding the 2e.
Hereinafter, differences from the first embodiment in the third embodiment will be mainly described.

第１電極３１ｅおよび第２電極３２ｅは、実施形態１で説明した第１電極１１ｅおよび第２電極１２ｅにおける四つ角近傍に設けられた微調整機構Ａ（図１〜図３参照）を有さないこと以外はそれらと同様の構成を有している。   The first electrode 31e and the second electrode 32e do not have the fine adjustment mechanism A (see FIGS. 1 to 3) provided near the four corners of the first electrode 11e and the second electrode 12e described in the first embodiment. Other than that, it has the same configuration as those.

第１および第２支持部３３、３４は、第１および第２電極３１ｅ、３２ｅを垂直に支持する支持ブロックからなり、かつ、第１および第２電極３１ｅ、３２ｅの外周縁の四つ角近傍を部分的に支持するようそれぞれ４つ設けられている。各支持ブロックは、電極外周縁を嵌め入れる凹溝を有している。以下、第１支持部３３を第１支持ブロック３３と称し、第２支持部３４を第２支持ブロック３４と称する。なお、第１支持ブロック３３は、微調整機構Ｃの一構成部品とされている。   The first and second support portions 33 and 34 are support blocks that vertically support the first and second electrodes 31e and 32e, and part of the outer periphery of the first and second electrodes 31e and 32e is near the four corners. Four are provided to support each other. Each support block has a concave groove into which the outer periphery of the electrode is fitted. Hereinafter, the first support portion 33 is referred to as a first support block 33, and the second support portion 34 is referred to as a second support block 34. The first support block 33 is a component of the fine adjustment mechanism C.

微調整機構Ｃは、第１支持部ブロック３３と、第１支持ブロック３３をスライド可能に支持する基部ｃ1と、基部ｃ1に水平方向に形成された貫通孔ｃ21に定位置で回転可能に挿入されかつ第１支持ブロック３３に水平方向に形成されたネジ孔３３ａに羅着するボルト部材ｃ2とを備えたスライド機構であり、ボルト部材ｃ2を回して第１支持ブロック３３を基部ｃ1上で水平方向に移動させることにより、第１電極３１ｅと第２電極３２ｅを相対的に水平方向に移動させて電極間距離Ｌ１を微調整するよう構成されている。
さらに詳しく説明すると、基部ｃ1は、第１および第２電極３１ｅ、３２ｅが対向する方向に延びる凹溝ｃ11を有する平板部ｃ10と、平板部ｃ10の第２電極３２ｅとは反対側の端部に連設された垂直壁部ｃ20とを有し、垂直壁部ｃ20に前記貫通孔ｃ21が形成されると共に、凹溝ｃ11内に第１支持ブロック３３がスライド可能に設置されている。また、ボルト部材ｃ2における貫通孔ｃ21の両側には凹周溝が形成され、各凹周溝にＣ形リングが嵌め込まれることにより、ボルト部材ｃ2が定位置で回転可能とされている。 The fine adjustment mechanism C is rotatable at a fixed position in a first support block 33, a base c 1 that slidably supports the first support block 33, and a through-hole c 21 formed in the base c 1 in the horizontal direction. And a bolt member c 2 which is inserted into the first support block 33 and is screwed into a screw hole 33a formed in the horizontal direction. The bolt member c 2 is turned to turn the first support block 33 into the base portion. by moving horizontally on c 1, and the first electrode 31e and the electrode distance L1 by moving the second electrode 32e relatively horizontally configured to fine tune.
More specifically, the base c 1 includes a flat plate portion c 10 having a concave groove c 11 extending in a direction in which the first and second electrodes 31e and 32e face each other, and a side opposite to the second electrode 32e of the flat plate portion c 10 . A vertical wall portion c 20 connected to the end of the first wall, the through-hole c 21 is formed in the vertical wall portion c 20 , and the first support block 33 is slidable in the groove c 11 . is set up. Further, on both sides of the through-holes c 21 in the bolt member c 2 is formed concave peripheral groove, by C-shaped rings each concave peripheral groove is fitted, the bolt member c 2 is rotatable at a fixed position .

２つの微調整機構Ｃおよび２つの第２支持ブロック３４は、チャンバーＭ２の底壁内面に直接または固定部材を介して固定されており、それぞれ残り２つの微調整機構Ｃおよび２つの第２支持ブロック３４は、チャンバーＭ２の上壁内面に直接または固定部材を介して固定されている。
また、例えば、微調整機構Ｃの基部ｃ1と第２支持ブロック３４は相互に当接して配置されており、初期状態において第１電極３１ｅは電極間距離Ｌが成膜時の最適距離となる図７に示す初期位置に第１支持ブロック３３が配置されている。なお、第１電極３１ｅが初期位置に配置されているかを確認するために、例えば、第１支持ブロック３３と基部ｃ1のそれぞれに位置決め線を刻印しておき、双方の位置決め線が一致したことにより初期位置を確認することができる。 The two fine adjustment mechanisms C and the two second support blocks 34 are fixed to the inner surface of the bottom wall of the chamber M2 directly or via a fixing member, and the remaining two fine adjustment mechanisms C and two second support blocks, respectively. 34 is fixed to the inner surface of the upper wall of the chamber M2 directly or via a fixing member.
Further, for example, the base c 1 of the fine adjustment mechanism C and the second support block 34 are disposed in contact with each other, and in the initial state, the distance L between the electrodes of the first electrode 31e is the optimum distance during film formation. The first support block 33 is disposed at the initial position shown in FIG. Incidentally, the first electrode 31e is to confirm whether it is located in the initial position, for example, leave imprinted positioning lines to a first respective support blocks 33 and the base c 1, both the positioning line matches Thus, the initial position can be confirmed.

このプラズマ処理装置の場合、例えば、第１電極３１ｅの中央部が内側（第２電極２２ｅ側）へ反っている場合、微調整機構Ｃのボルト部材ｃ2を一方向へ回して第１支持ブロック３３を基部ｃ1上で外側（第２電極２２ｅと反対側）へスライド移動させることにより、第１電極３１ｅにおける微調整機構Ｃの近傍部分（角部近傍部分）が外側へ移動する。
この際、第１電極３１ｅの中央部から第２電極３２ｅの中央部までの電極間距離Ｌ１（図６参照）が最適距離内となるように、１箇所以上の微調整機構Ｃによって電極間距離Ｌ１を広げる微調整を行う。 In this plasma processing apparatus, for example, if the central portion of the first electrode 31e is warped inward (second electrode 22e side), the first support block by turning the bolt member c 2 of the fine adjustment mechanism C in one direction 33 outside on the base c 1 to the (opposite side to the second electrode 22e) by sliding, the portion near the fine adjustment mechanism C at the first electrode 31e (corner portion near) moves outward.
At this time, the inter-electrode distance is adjusted by one or more fine adjustment mechanisms C so that the inter-electrode distance L1 (see FIG. 6) from the central portion of the first electrode 31e to the central portion of the second electrode 32e is within the optimum distance. Make fine adjustments to expand L1.

第１電極３１ｅの中央部が外側へ反っている場合は、微調整機構Ｃのボルト部材ｃ2を他方向へ回して第１支持ブロック３３を基部ｃ1上で内側へスライド移動させることにより、第１電極３１ｅにおける微調整機構Ｃの近傍部分（角部近傍部分）を内側へ移動させ、第１電極３１ｅの中央部から第２電極３２ｅの中央部までの電極間距離Ｌ１（図６参照）が最適距離内となるように、１箇所以上の微調整機構Ｃによって電極間距離Ｌ１を狭める微調整を行う。
これらの微調整の場合、第１電極３１ｅと第２電極３２ｅとの平行度を高くするためには、４箇所の微調整機構Ｃにおける第１支持部材３３の移動量を揃えることが好ましい。第１支持部材３３の移動量は、ボルト部材ｃ2のねじピッチおよび回転量によって決まるため、ボルト部材ｃ2の回転量によって移動量が予測できる。 If the central portion of the first electrode 31e is warped outwardly, by sliding the first supporting block 33 by turning the bolt member c 2 of the fine adjustment mechanism C in the other direction inwards on the base c 1, A portion near the fine adjustment mechanism C (a portion near the corner) in the first electrode 31e is moved inward, and an interelectrode distance L1 from the center of the first electrode 31e to the center of the second electrode 32e (see FIG. 6). Is adjusted to reduce the interelectrode distance L1 by one or more fine adjustment mechanisms C so that the distance is within the optimum distance.
In the case of these fine adjustments, in order to increase the parallelism between the first electrode 31e and the second electrode 32e, it is preferable to align the movement amounts of the first support members 33 in the four fine adjustment mechanisms C. Amount of movement of the first support member 33, since the depend thread pitch and the amount of rotation of the bolt member c 2, can be predicted amount of movement by the rotation of the bolt member c 2.

なお、第１電極３１ｅは外側へ反ることがないのであれば、第１支持ブロック３３の内側への移動の死点位置を初期位置とすればよく、第１電極３１ｅは内側へ反ることがないのであれば、第１支持ブロック３３の外側への移動の死点位置を初期位置とすればよい。
このように構成された微調整機構Ｃによっても、成膜時に特に重要な電極中央部の電極間距離Ｌ１を高精度に最適距離内に微調整することができるため、基板Ｓ上に均一な膜厚で成膜することが可能となる。
また、微調整機構Ｃは、第１電極３１ｅを内側と外側の両方向に移動させることができるため、第２電極３２ｅ側に微調整機構を設けなくても済むが、設けてもよい。 If the first electrode 31e does not bend outward, the dead center position of the first support block 33 may be set as the initial position, and the first electrode 31e warps inward. If there is no, the dead center position of the movement outside the first support block 33 may be set as the initial position.
The fine adjustment mechanism C configured as described above can finely adjust the inter-electrode distance L1 at the center of the electrode, which is particularly important at the time of film formation, within the optimum distance with high accuracy. It is possible to form a film with a thickness.
Further, since the fine adjustment mechanism C can move the first electrode 31e in both the inner and outer directions, the fine adjustment mechanism need not be provided on the second electrode 32e side, but may be provided.

（実施形態４）
図９は本発明のプラズマ処理装置の実施形態４を示す正面から見た構成図であり、図１０は実施形態４のプラズマ処理装置の一側面から見た内部構成図であり、図１１は図１０における電極が無い状態の内部構成図であり、図１２は実施形態４のプラズマ処理装置の上方から見た内部構成図であり、図１３は実施形態４における固定片と支持片との位置関係を説明する図であり、図１４は実施形態４における第１電極が昇降する状態を示す説明図である。
実施形態４は横型成膜用プラズマ処理装置であって、上下２段で配置された電極対における各第１電極が昇降するよう構成されている点が実施形態１とは異なり、その他の構成が実施形態１と概ね同様である。以下、実施形態４における実施形態１とは異なる点を主に説明する。なお、図９〜図１４において、図１〜図４で説明した要素と同様の要素には、同一の符号を付している。 (Embodiment 4)
FIG. 9 is a structural view seen from the front showing a fourth embodiment of the plasma processing apparatus of the present invention, FIG. 10 is an internal structural view seen from one side of the plasma processing apparatus of the fourth embodiment, and FIG. 10 is an internal configuration diagram in the absence of an electrode in FIG. 10, FIG. 12 is an internal configuration diagram viewed from above the plasma processing apparatus of Embodiment 4, and FIG. 13 is a positional relationship between a fixed piece and a support piece in Embodiment 4. FIG. 14 is an explanatory view showing a state in which the first electrode in the fourth embodiment moves up and down.
The fourth embodiment is a horizontal film forming plasma processing apparatus, which is different from the first embodiment in that each first electrode in an electrode pair arranged in two stages, upper and lower, is raised and lowered. This is substantially the same as in the first embodiment. Hereinafter, differences from the first embodiment in the fourth embodiment will be mainly described. 9 to 14, elements similar to those described in FIGS. 1 to 4 are denoted by the same reference numerals.

このプラズマ処理装置は、平板状の第１電極４１ｅおよび第２電極４２ｅからなる電極対が、チャンバーＭ４内に水平対向状に上下２段で配置されており、さらに、チャンバーＭ４内には、第１電極４１ｅを水平状に支持する第１支持部１３と、第２電極４２ｅを水平状に支持する第２支持部１４と、第１および第２支持部１３、１４が取り付けられる支持手段４５と、第１電極４１ｅを対向方向に移動可能な移動手段４６とが設けられている。
第１電極４１ｅおよび第２電極４２ｅは実施形態１と実質的に同様であるが、第１電極４１ｅの外周縁の４箇所には実施形態１の微調整機構Ａと若干異なる類似する後述の微調整機構Ｄが設けられている。一方、第２電極４２ｅの外周縁の４箇所には実施形態１と同様の微調整機構Ａが設けられている。なお、微調整機構Ｄについて詳しくは後述する。 In this plasma processing apparatus, an electrode pair composed of a plate-like first electrode 41e and second electrode 42e is arranged in two upper and lower stages in a horizontally opposed manner in a chamber M4. A first support portion 13 that horizontally supports the first electrode 41e, a second support portion 14 that horizontally supports the second electrode 42e, and a support means 45 to which the first and second support portions 13 and 14 are attached. A moving means 46 capable of moving the first electrode 41e in the facing direction is provided.
The first electrode 41e and the second electrode 42e are substantially the same as those in the first embodiment, but similar to those described later that are slightly different from the fine adjustment mechanism A in the first embodiment at four locations on the outer peripheral edge of the first electrode 41e. An adjustment mechanism D is provided. On the other hand, fine adjustment mechanisms A similar to those in the first embodiment are provided at four locations on the outer peripheral edge of the second electrode 42e. Details of the fine adjustment mechanism D will be described later.

チャンバーＭ４は、金属製の箱型本体部Ｍ４ａと、本体部Ｍ４ａを設置場所の床面上に支持する金属製の脚部Ｍ４ｂとを備えており、第２電極４２ｅは、２本の導電性接地部材１７および金属製のチャンバーＭ４を介して接地されている。
また、実施形態４の場合、移動手段４６によって第１電極４１ｅが昇降するため、第１電極４１ｅと接続される給電ケーブルＥ3の少なくとも一部は、第１電極４１ｅの昇降動作を許容しかつ追随できるよう可撓性を有している。例えば、チャンバーＭ４の箱型本体部Ｍ４ａと第１電極４１ｅとの間部分の給電ケーブルは、可撓性を有する金属製網部材とすることができる。 The chamber M4 includes a metal box-shaped main body portion M4a and a metal leg portion M4b that supports the main body portion M4a on the floor surface of the installation place, and the second electrode 42e has two conductive properties. It is grounded through the grounding member 17 and a metal chamber M4.
Further, in the embodiment 4, since the first electrode 41e by moving means 46 is raised and lowered, at least a portion of the feeder cable E 3 being connected to the first electrode 41e, permit vertical movement of the first electrode 41e vital Flexible so that it can follow. For example, the power feeding cable between the box-shaped main body M4a of the chamber M4 and the first electrode 41e can be a flexible metal net member.

支持手段４５は、チャンバーＭ４内における第１および第２電極４１ｅ、４２ｅの周囲に配置された複数本の支持用支柱４５ａと、複数本の支持用支柱４５ａを連結する枠体４５ｂと、各支持用支柱４５ａに取り付けられた第１支持部１３および第２支持部１４とが一体化された支持構造体である。
具体的には、各電極４１ｅ、４２ｅの４つの角部付近に配置されるように４本の支持用支柱４５ａがチャンバーＭ４の底壁内面に固定されている。そして、４本の支持用支柱４５ａの上端が四角形の枠体４５ｂにて連結されている。また、各支持用支柱４５ａの所定高さ位置の２箇所に、第１支持部１３および第２支持部１４がそれぞれ内向きに取り付けられている。なお、枠体４５ｂは、４本のストレートな部材を組み合わせてなる。 The support means 45 includes a plurality of support columns 45a disposed around the first and second electrodes 41e and 42e in the chamber M4, a frame body 45b connecting the plurality of support columns 45a, and each support This is a support structure in which the first support part 13 and the second support part 14 attached to the support column 45a are integrated.
Specifically, four support columns 45a are fixed to the inner surface of the bottom wall of the chamber M4 so as to be arranged near the four corners of the electrodes 41e and 42e. The upper ends of the four support columns 45a are connected by a rectangular frame 45b. Moreover, the 1st support part 13 and the 2nd support part 14 are each attached inward at two places of the predetermined height position of each support | pillar 45a. The frame body 45b is a combination of four straight members.

つまり、上下の電極対の各第１電極４１ｅを水平状に支持する８つの第１支持部１３と、上下の電極対の各第２電極４２ｅを水平状に支持する８つの第２支持部１４とが、４本の支持用支柱４５ａの所定高さ位置に取り付けられている。このとき、各段の第１・第２支持部１３、１４は、各電極対における第１電極４１ｅと第２電極４２ｅとの間の電極間距離Ｌ１が最適距離となる高さ位置に配置されると共に、上段の第２支持部１４と下段の第１支持部１３は、上下の電極対の間隔Ｌ２が所定距離となる高さ位置に配置されている。   That is, eight first support portions 13 that horizontally support the first electrodes 41e of the upper and lower electrode pairs and eight second support portions 14 that horizontally support the second electrodes 42e of the upper and lower electrode pairs. Are attached at predetermined height positions of the four support columns 45a. At this time, the first and second support portions 13 and 14 of each stage are disposed at a height position where the interelectrode distance L1 between the first electrode 41e and the second electrode 42e in each electrode pair is the optimum distance. In addition, the upper second support portion 14 and the lower first support portion 13 are arranged at a height position where the distance L2 between the upper and lower electrode pairs is a predetermined distance.

移動手段４６は、チャンバーＭ４内における第１電極４１ｅおよび第２電極４２ｅの周囲に配置された４本の昇降用支柱４６ａと、４本の昇降用支柱４６ａの上下２箇所を連結する枠体４６ｂと、第１・第２支持部１３、１４と干渉しないように昇降用支柱４６ａまたは枠体４６ｂに取り付けられた複数の昇降支持片４６ｃと、昇降駆動部４６ｄと、昇降駆動部４６ｄと昇降用支柱４６ａまたは枠体４６ｂとを連結し昇降駆動部４６ｄの昇降動作を伝達する連結部４６ｅとを備える。
この移動手段４６は、所定ストロークの上昇動作によって、第１支持部１３上の第１電極４１ｅを第２電極４２ｅから離間させ（図１４（Ａ）参照）、所定ストロークの下降動作によって、第１電極４１ｅを第１支持部１３上に載置する（図１４（Ｂ）参照）ように構成されている。
図１４（Ｂ）は、第１支持部１３に第１電極４１ｅが当接しかつ第２支持部１４に第２電極４２ｅが当接することにより、各電極４１ｅ、４２ｅが初期位置に配置された状態を示している。 The moving means 46 includes four lifting columns 46a disposed around the first electrode 41e and the second electrode 42e in the chamber M4, and a frame 46b that connects two upper and lower columns of the four lifting columns 46a. A plurality of lifting support pieces 46c attached to the lifting column 46a or the frame 46b so as not to interfere with the first and second support portions 13 and 14, a lifting drive unit 46d, a lifting drive unit 46d, and a lifting drive unit. And a connecting portion 46e that connects the support 46a or the frame 46b and transmits the lifting / lowering operation of the lifting / lowering drive portion 46d.
The moving means 46 separates the first electrode 41e on the first support portion 13 from the second electrode 42e by an ascending operation of a predetermined stroke (see FIG. 14A), and the first operation is performed by a descending operation of the predetermined stroke. The electrode 41e is configured to be placed on the first support portion 13 (see FIG. 14B).
FIG. 14B shows a state in which the electrodes 41e and 42e are arranged at the initial positions by the first electrode 41e coming into contact with the first support portion 13 and the second electrode 42e coming into contact with the second support portion 14. Is shown.

４本の昇降用支柱４６ａは、４本の支持用支柱４５ａの近傍で、かつ各昇降用支柱４６ａが２本の支持用支柱４５ａの間であり、さらに、各昇降用支柱４６ａから各電極までの距離が支持用支柱４５ａから各電極までの距離とほぼ等しくなるように配置されている。そして、４本の昇降用支柱４６ａの上部および下部が枠体４６ｂにて相互に連結されている。なお、枠体４６ｂは、４本のストレートな部材を組み合わせてなる。
また、昇降支持片４６ｃは、上下の電極対の第１電極４１ｅを昇降可能なように、４本の昇降用支柱４６ａに２つずつ内向きに取り付けられている。また、昇降支持片４６ｃの内側への突出寸法は、昇降支持片４６ｃが下降した際に第２電極４２ｅと衝突しない長さに設定されている。このとき、図１４（Ｂ）に示すように、昇降用支柱４６ａを下降させて電極間距離Ｌ１に設定された状態において、各昇降用支柱４６ａに対応する上下２つの昇降支持片４６ｃは、上下の電極対の第２電極４２ｅの下面よりも僅かに（例えば5ｍｍ程度）下方に位置する。
なお、昇降支持片４６ｃを第２電極４２ｅの下面よりも下に下降させるのは、電極間のプラズマ放電領域に第１電極を支持していない支持片が存在すると、支持片がプラズマに干渉して放電空間に均一なプラズマを発生できなくなるからである。 The four lifting columns 46a are in the vicinity of the four supporting columns 45a, each lifting column 46a is between the two supporting columns 45a, and from each lifting column 46a to each electrode. Is arranged so that the distance from the support column 45a to each electrode is substantially equal. And the upper part and the lower part of the four raising / lowering support | pillars 46a are mutually connected by the frame 46b. The frame body 46b is formed by combining four straight members.
In addition, two lifting support pieces 46c are attached inwardly to the four lifting columns 46a so that the first electrodes 41e of the upper and lower electrode pairs can be lifted and lowered. Further, the projecting dimension to the inside of the lifting support piece 46c is set to a length that does not collide with the second electrode 42e when the lifting support piece 46c is lowered. At this time, as shown in FIG. 14B, in the state where the lifting column 46a is lowered and set to the distance L1 between the electrodes, the upper and lower two lifting support pieces 46c corresponding to the lifting columns 46a are The electrode pair is located slightly below the lower surface of the second electrode 42e (for example, about 5 mm).
The elevating support piece 46c is lowered below the lower surface of the second electrode 42e when the support piece that does not support the first electrode exists in the plasma discharge region between the electrodes. This is because uniform plasma cannot be generated in the discharge space.

昇降駆動部４６ｄは、２つの油圧シリンダを備える油圧シリンダ機構であり、各油圧シリンダが上下方向に伸縮するよう設置場所の床面に固定されている。
連結部４６ｅは、２つの油圧シリンダの伸縮ロッドの先端に固定された連結板４６ｅ１と、連結板４６ｅ１と４本の昇降用支柱４６ａの下端とを連結する連結支柱４６ｅ２とを備え、昇降駆動部４６ｄの昇降動作を連結板４６ｅ１および４本の連結支柱４６ｅ２を介して４本の昇降用支柱４６ａおよびこれらに取り付けられた各昇降支持片４６ｃに同期的に伝達するように構成されている。この際、昇降駆動部４６ｄの上昇動作の限界は、上方の枠体４６ｂが支持手段４５の上方の枠体４５ｂに当たらない程度とされる。
連結部４６ｅの４本の連結支柱４６ｅ２は、チャンバーＭ４の底壁の４箇所に形成された挿通孔を上下移動可能に挿通しており、さらに、チャンバーＭ４の底壁には４つの挿通孔と連通して各連結支柱４６ｅ２をガイドする筒状のガイド部材４６ｆが取り付けられており、挿通孔と連結支柱４６ｅ２の間およびガイド部材４６ｆと連結支柱４６ｅ２の間の隙間は耐熱シール材にてシールされている。 The elevating drive unit 46d is a hydraulic cylinder mechanism including two hydraulic cylinders, and is fixed to the floor surface of the installation place so that each hydraulic cylinder expands and contracts in the vertical direction.
The connecting portion 46e includes a connecting plate 46e1 fixed to the ends of the telescopic rods of the two hydraulic cylinders, and a connecting post 46e2 that connects the connecting plate 46e1 and the lower ends of the four lifting posts 46a. The lifting / lowering movement of 46d is synchronously transmitted to the four lifting / lowering struts 46a and the respective lifting / lowering support pieces 46c attached thereto via the connecting plate 46e1 and the four connecting struts 46e2. At this time, the limit of the lifting operation of the lifting drive unit 46 d is set such that the upper frame body 46 b does not hit the upper frame body 45 b of the support means 45.
The four connecting struts 46e2 of the connecting portion 46e are inserted through four insertion holes formed in the bottom wall of the chamber M4 so as to be movable up and down, and further, four insertion holes are formed in the bottom wall of the chamber M4. A cylindrical guide member 46f that communicates and guides each connecting column 46e2 is attached, and a gap between the insertion hole and the connecting column 46e2 and between the guide member 46f and the connecting column 46e2 is sealed with a heat-resistant sealing material. ing.

図１３と図１４に示すように、微調整機構Ｄは、近接する支持用支柱４５ａと昇降用支柱４６ａの対に近接して第１電極４１ｅの外周縁の四つ角近傍の４箇所に連設されている。さらに詳しく説明すると、実施形態４の場合、微調整機構Ｄは、第１支持部１３と当接可能なネジ孔を有する突出片と、第１支持部１３と並んだ位置の昇降支持片４６ｃと当接可能なネジ孔を有する突出片とが一体化されてなるネジ孔部と、各ネジ孔に螺着されたボルト部材ｄ1とを有するボルト機構である。なお、各突出片は２つに分割されていてもよい。 As shown in FIGS. 13 and 14, the fine adjustment mechanism D is connected to four positions near the four corners of the outer peripheral edge of the first electrode 41 e in the vicinity of a pair of the supporting support column 45 a and the lifting support column 46 a that are close to each other. ing. More specifically, in the case of the fourth embodiment, the fine adjustment mechanism D includes a protruding piece having a screw hole capable of contacting the first support portion 13, and a lifting support piece 46 c at a position aligned with the first support portion 13. This is a bolt mechanism having a screw hole portion in which a protruding piece having a screw hole that can be contacted is integrated, and a bolt member d 1 screwed into each screw hole. Each protruding piece may be divided into two.

このように構成された実施形態４のプラズマ処理装置によれば、昇降駆動部４６ｄの伸長動作による移動手段４６の上昇動作によって、図１４（Ｂ）に示す最下位置の昇降支持片４６ｃが上昇して第１電極４１ｅを受け、さらに移動支持片４６ｃが最上位置まで上昇することにより第１電極４１ｅが第２電極４２ｅから離間する（図１４（Ａ）参照）。この際、第２電極４２ｅ、第１支持部１３および移動支持片４６ｃの寸法が上述のように設定されているため、移動支持片４６ｃが第２電極４２ｅに衝突することはない。このように電極間距離を広くすることにより、第２電極４２ｅ上に基板Ｓを容易に設置する、あるいは第２電極４２ｅ上から基板Ｓを容易に取り出すことができる。
また、図１４（Ａ）の状態から、昇降駆動部４６ｄの短縮動作による移動手段４６の下降動作によって、最上位置の支持片４６ｃが下降して第１電極４１ｅが第１支持部１３上に載置され、これによって所定の電極間距離Ｌ１が決定され、さらに移動支持片４６ｃが第２電極４２ｅの下面よりも下の最下位置まで下降することによって、狭電極間プラズマ処理が可能となる。
また、図１４（Ａ）の状態から、最上位置の移動支持片４６ｃが下降し、第１電極４１ｃが第１支持部１３上に載置される前に移動支持片４６ｃの下降が停止することにより、あるいは図１４（Ｂ）の状態から移動支持片４６ｃが上昇して第１電極４１ｅを受け、移動支持片４６ｃの上昇が最上位置に達する前に停止することにより、所定の電極間距離Ｌ１よりも広い広電極間距離（例えば15〜30ｍｍ程度）が決定され、広電極間プラズマ処理が可能となる。 According to the plasma processing apparatus of the fourth embodiment configured as described above, the lifting support piece 46c at the lowest position shown in FIG. 14B is lifted by the lifting operation of the moving means 46 by the extending operation of the lifting drive unit 46d. Then, the first electrode 41e is received, and the moving support piece 46c is further raised to the uppermost position, whereby the first electrode 41e is separated from the second electrode 42e (see FIG. 14A). At this time, since the dimensions of the second electrode 42e, the first support portion 13, and the moving support piece 46c are set as described above, the moving support piece 46c does not collide with the second electrode 42e. Thus, by widening the distance between the electrodes, the substrate S can be easily installed on the second electrode 42e, or the substrate S can be easily taken out from the second electrode 42e.
Further, from the state of FIG. 14A, the uppermost support piece 46c is lowered by the lowering operation of the moving means 46 by the shortening operation of the elevating drive unit 46d, and the first electrode 41e is mounted on the first support unit 13. Thus, a predetermined inter-electrode distance L1 is determined, and the moving support piece 46c is lowered to the lowest position below the lower surface of the second electrode 42e, thereby enabling the plasma treatment between the narrow electrodes.
Further, from the state of FIG. 14A, the uppermost moving support piece 46c is lowered, and the lowering of the moving support piece 46c is stopped before the first electrode 41c is placed on the first support portion 13. Or the moving support piece 46c ascends from the state of FIG. 14B to receive the first electrode 41e, and stops before the moving support piece 46c rises to the uppermost position, whereby a predetermined inter-electrode distance L1. A wider interelectrode distance (for example, about 15 to 30 mm) is determined, and plasma processing between the wide electrodes becomes possible.

すなわち、このプラズマ処理装置では、プラズマ処理の目的に応じて、電極間距離Ｌ１に調整した後、第１電極４１ｅと第２電極４２ｅの間に第１の反応ガスを介してプラズマ放電させる狭電極間プラズマ処理工程と（図１４（Ａ）参照）、電極間距離Ｌ１よりも広い広電極間距離に調整した後、第１電極４１ｅと第２電極４２ｅの間に第２の反応ガスを介してプラズマ放電させる広電極間プラズマ処理工程のいずれか一方を行うか、或いは狭電極間プラズマ処理工程と広電極間プラズマ処理工程を任意の順で連続的に行うプラズマ処理方法を実施することができる。
ここで、「プラズマ処理の目的に応じて」とは、成膜すべき膜の材料、膜の緻密度、基板Ｓの厚み等に対応するという意味である。 That is, in this plasma processing apparatus, after adjusting to the interelectrode distance L1 in accordance with the purpose of the plasma processing, a narrow electrode that performs plasma discharge via the first reactive gas between the first electrode 41e and the second electrode 42e. After the inter-plasma treatment step (see FIG. 14A), the inter-electrode distance L1 is adjusted to be wider than the inter-electrode distance L1, and then the second reaction gas is interposed between the first electrode 41e and the second electrode 42e. It is possible to carry out a plasma processing method in which either one of the wide electrode plasma processing steps for plasma discharge is performed, or the narrow electrode plasma processing step and the wide electrode plasma processing step are successively performed in an arbitrary order.
Here, “according to the purpose of the plasma treatment” means to correspond to the material of the film to be formed, the density of the film, the thickness of the substrate S, and the like.

狭電極間プラズマ処理工程として、例えば、基板Ｓの表面に結晶を含むシリコン系半導体膜を形成するプラズマCVD工程が挙げられ、広電極間プラズマ処理工程としては、基板Ｓの表面に非晶質シリコン系半導体膜を形成するプラズマCVD工程が挙げられる。
このような結晶を含むシリコン系半導体膜を形成するプラズマCVD工程と、非晶質シリコン系半導体膜を形成するプラズマCVD工程は、いずれか一方の工程のみを行う、あるいは任意の順で両方の工程を連続的に行うことができる。
例えば、膜原料である反応ガスＧ１を所定の流量および圧力で第１電極４１ｅと第２電極４２ｅとの間隙に充填し、第１電極４１ｅと第２電極４２ｅとに高周波電力を印加することで、第１電極４１ｅと第２電極４２ｅとの間にグロー放電領域（プラズマ放電領域）を発生させ、基板Ｓ上に非晶質の膜、結晶性の膜またはこれらの積層膜を高精度に効率よく形成することができる。例えば、原料ガスとしてＨ2で希釈したＳｉＨ4ガスを使用して、膜厚３００ｎｍのシリコン薄膜を膜厚分布±１０％以内で堆積させることができる。 Examples of the narrow electrode plasma processing step include a plasma CVD step of forming a silicon-based semiconductor film containing crystals on the surface of the substrate S, and the wide electrode plasma processing step includes amorphous silicon on the surface of the substrate S. A plasma CVD process for forming a semiconductor film can be given.
The plasma CVD process for forming a silicon-based semiconductor film containing such a crystal and the plasma CVD process for forming an amorphous silicon-based semiconductor film are performed in only one of the processes, or both processes in any order. Can be performed continuously.
For example, the reactive gas G1 that is a film material is filled in the gap between the first electrode 41e and the second electrode 42e at a predetermined flow rate and pressure, and high frequency power is applied to the first electrode 41e and the second electrode 42e. In addition, a glow discharge region (plasma discharge region) is generated between the first electrode 41e and the second electrode 42e, and an amorphous film, a crystalline film, or a laminated film thereof is efficiently formed on the substrate S with high accuracy. Can be well formed. For example, using a SiH 4 gas diluted with H 2 as a source gas, a silicon thin film having a thickness of 300 nm can be deposited with a thickness distribution within ± 10%.

さらに、このプラズマ処理装置によれば、上述の狭電極間プラズマ処理工程に先立って、実施形態１と同様に、微調整機構Ｄにおける第１支持部１３に当接するボルト部材ｄ1の突出量または微調整機構Ａにおける第２支持部１４に当接するボルト部材ａ2の突出量を調整することにより、第１電極４１ｅと第２電極４２ｅの中央部における電極間距離Ｌ１を微調整することにより、狭電極間プラズマ処理工程で高精度に成膜することができる。
また、このプラズマ処理装置によれば、上述の広電極間プラズマ処理工程に先立って、実施形態１と同様に、微調整機構Ｄにおける移動支持片４６ｃに当接するボルト部材ｄ1の突出量または微調整機構Ａにおける第２支持部１４に当接するボルト部材ａ2の突出量を調整することにより、第１電極４１ｅと第２電極４２ｅの中央部における電極間距離を微調整することにより、広電極間プラズマ処理工程で高精度に成膜することができる。 Furthermore, according to this plasma processing apparatus, the amount of protrusion of the bolt member d 1 contacting the first support portion 13 in the fine adjustment mechanism D or the same as in the first embodiment, prior to the above-described narrow electrode plasma processing step, or By adjusting the protrusion amount of the bolt member a 2 that is in contact with the second support portion 14 in the fine adjustment mechanism A, by finely adjusting the inter-electrode distance L1 at the center of the first electrode 41e and the second electrode 42e, It is possible to form a film with high accuracy by a plasma treatment process between narrow electrodes.
In addition, according to this plasma processing apparatus, prior to the above-described wide electrode plasma processing step, as in the first embodiment, the protrusion amount or the minute amount of the bolt member d 1 that contacts the moving support piece 46c in the fine adjustment mechanism D is fine. By adjusting the protruding amount of the bolt member a 2 that contacts the second support portion 14 in the adjustment mechanism A, the distance between the electrodes at the center portion of the first electrode 41e and the second electrode 42e is finely adjusted, so that the wide electrode It is possible to form a film with high accuracy in the intermediate plasma treatment process.

（実施形態５）
図１５は本発明のプラズマ処理装置の実施形態５における第２電極が昇降する状態を示す説明図である。なお、図１５において、図９〜図１４で説明した要素と同様の要素には、同一の符号を付している。
実施形態５のプラズマ処理装置は、実施形態４で説明した第２支持部が昇降し、第１支持部が固定され、移動支持片が省略され、第１電極側の微調整機構の構成および第２電極側の微調整機構の位置が変更された点が実施形態４とは異なり、他の構成は実施形態４と概ね同様である。以下、実施形態５の実施形態４とは異なる点を主に説明する。 (Embodiment 5)
FIG. 15 is an explanatory view showing a state where the second electrode moves up and down in the fifth embodiment of the plasma processing apparatus of the present invention. In FIG. 15, the same elements as those described in FIGS. 9 to 14 are denoted by the same reference numerals.
In the plasma processing apparatus of the fifth embodiment, the second support portion described in the fourth embodiment is moved up and down, the first support portion is fixed, the movable support piece is omitted, the first electrode side fine adjustment mechanism configuration and the first Unlike the fourth embodiment, the position of the fine adjustment mechanism on the two-electrode side is changed, and other configurations are substantially the same as those of the fourth embodiment. Hereinafter, points of the fifth embodiment different from the fourth embodiment will be mainly described.

実施形態５において、第２支持部５４は、第２電極４２ｅを昇降可能に支持できるよう昇降用支柱４６ａに固定されると共に、支持用支柱４５側へ延びている。それに伴い、第２電極４２ｅ側の微調整機構Ａは、第２支持部５４に当接するよう昇降用支柱４６ａに近接した位置に配置される。
また、第１支持部５３は、図１５（Ａ）に示す下降状態の第２支持部５４が図１５（Ｂ）に示すように上昇したときにその上端面と当接することにより所定の電極間距離Ｌ１が決定するよう、厚くかつ昇降用支柱４６ａ側へ延びて形成されている。それに伴い、第１電極４１ｅの外周縁の４箇所には、第１支持部５３に当接する微調整機構Ａが設けられている。 In the fifth embodiment, the second support portion 54 is fixed to the lifting column 46a so as to support the second electrode 42e so as to be movable up and down, and extends to the supporting column 45 side. Accordingly, the fine adjustment mechanism A on the second electrode 42e side is disposed at a position close to the lifting column 46a so as to contact the second support portion 54.
Further, the first support portion 53 is in contact with the upper end surface when the second support portion 54 in the lowered state shown in FIG. 15A is raised as shown in FIG. The distance L1 is determined so as to be thick and extend toward the lifting column 46a. Accordingly, fine adjustment mechanisms A that abut on the first support portion 53 are provided at four locations on the outer peripheral edge of the first electrode 41e.

このように構成された実施形態５のプラズマ処理装置によれば、移動手段４６の上昇動作によって、図１５（Ａ）に示す最下位置の第２支持部５４が上昇して、図１５（Ｂ）に示すように第２電極４２ｅを第１支持部５３に圧接したところで停止することにより、電極間距離Ｌ１が決定され、狭電極間プラズマ処理が可能となる。
また、図１５（Ｂ）の状態から、移動手段４６の下降動作によって、第２電極４２ｅが第１電極４１ｅから離間して電極間距離を広くすることができ、第２電極４２ｅ上に基板Ｓを容易に設置する、あるいは第２電極４２ｅ上から基板Ｓを容易に取り出すことができる。
また、図１５（Ｂ）の状態から、第２支持部５４が所定距離だけ下降して最下位置に達する前に停止する、あるいは図１５（Ａ）の状態から第２支持部５４が所定距離だけ上昇して第２電極４２ｅが第１支持部５３に当接する前に停止することにより、電極間距離Ｌ１よりも広い広電極間距離が決定され、広電極間プラズマ処理が可能となる。 According to the plasma processing apparatus of the fifth embodiment configured as above, the second support portion 54 at the lowest position shown in FIG. ), When the second electrode 42e is brought into pressure contact with the first support portion 53, the distance L1 between the electrodes is determined, and the plasma treatment between the narrow electrodes can be performed.
Further, from the state of FIG. 15B, the second electrode 42e can be separated from the first electrode 41e by the lowering operation of the moving means 46, and the interelectrode distance can be increased, and the substrate S is placed on the second electrode 42e. Can be easily installed, or the substrate S can be easily taken out from the second electrode 42e.
Further, from the state of FIG. 15B, the second support portion 54 is lowered by a predetermined distance and stopped before reaching the lowest position, or from the state of FIG. 15A, the second support portion 54 is moved to the predetermined distance. When the second electrode 42e is lifted and stopped before coming into contact with the first support portion 53, a wide interelectrode distance larger than the interelectrode distance L1 is determined, and the wide interelectrode plasma processing becomes possible.

すなわち、この実施形態５の成膜用プラズマ処理装置も、実施形態４と同様に、プラズマ処理の目的に応じて狭電極間プラズマ処理工程と広電極間プラズマ処理工程のいずれか一方を行うか、或いは狭電極間プラズマ処理工程と広電極間プラズマ処理工程を任意の順で連続的に行うプラズマ処理方法を実施することができる。
さらに、このプラズマ処理装置によれば、上述の狭電極間プラズマ処理工程および広電極間プラズマ処理工程に先立って、実施形態１と同様に、微調整機構Ａにおける第１支持部５３に当接するボルト部材ａ2の突出量または微調整機構Ａにおける第２支持部５４に当接するボルト部材ａ2の突出量を調整することにより、第１電極４１ｅと第２電極４２ｅの中央部における電極間距離を微調整することにより、各プラズマ処理工程で高精度に成膜することができる。 That is, the film forming plasma processing apparatus of the fifth embodiment also performs either the narrow electrode plasma processing step or the wide electrode plasma processing step according to the purpose of the plasma processing, as in the fourth embodiment. Or the plasma processing method which performs a plasma processing process between narrow electrodes and a plasma processing process between wide electrodes continuously in arbitrary orders can be implemented.
Furthermore, according to this plasma processing apparatus, prior to the above-described narrow electrode plasma processing step and wide electrode plasma processing step, as in the first embodiment, the bolt that contacts the first support portion 53 in the fine adjustment mechanism A By adjusting the protrusion amount of the member a 2 or the protrusion amount of the bolt member a 2 contacting the second support portion 54 in the fine adjustment mechanism A, the distance between the electrodes at the center portion of the first electrode 41e and the second electrode 42e can be reduced. By fine adjustment, it is possible to form a film with high accuracy in each plasma processing step.

（実施形態６）
図１６は本発明のプラズマ処理装置の実施形態６を示す正面から見た構成図であり、図１７は本発明の実施形態６の一側面から見た内部構成図であり、図１８は本発明の実施形態６の上方から見た内部構成図であり、図１９は本発明の実施形態６における第１電極が水平方向に移動する状態を示す説明図である。なお、図１６〜図１９において、図６で示した構成要素と同様の構成要素には、同一の符号を付している。
実施形態６は縦型成膜用プラズマ処理装置であり、第１電極６１ｅと第２電極６２ｅが相対的に移動するよう構成された点が実施形態３と異なり、その他の構成は実施形態３と概ね同様である。以下、実施形態６における実施形態３とは異なる点を主に説明する。 (Embodiment 6)
FIG. 16 is a front view showing a sixth embodiment of the plasma processing apparatus of the present invention, FIG. 17 is an internal configuration diagram viewed from one side of the sixth embodiment of the present invention, and FIG. It is an internal block diagram seen from the upper part of Embodiment 6, and FIG. 19 is explanatory drawing which shows the state which the 1st electrode in Embodiment 6 of this invention moves to a horizontal direction. 16 to 19, the same components as those illustrated in FIG. 6 are denoted by the same reference numerals.
The sixth embodiment is a vertical film forming plasma processing apparatus, which is different from the third embodiment in that the first electrode 61e and the second electrode 62e are relatively moved. Other configurations are the same as those of the third embodiment. It is almost the same. Hereinafter, points of the sixth embodiment different from the third embodiment will be mainly described.

このプラズマ処理装置は、平板状の第１電極６１ｅおよび第２電極６２ｅからなる電極対が、チャンバーＭ６内に垂直対向状に左右に配置されており、さらに、チャンバーＭ６内には、第１電極６１ｅを垂直状に支持する第１支持部３３を有する微調整機構Ｃと、第２電極６２ｅを垂直状に支持する第２支持部３４と、微調整機構Ｃおよび第２支持部３４が取り付けられる支持手段６４と、第１電極４１ｅを対向方向に移動可能な移動手段６５とが設けられている。
第１および第２電極４１ｅ、４２ｅ、これらを支持する微調整機構Ｄおよび第２支持部３４は実施形態３と実質的に同様である。 In this plasma processing apparatus, an electrode pair composed of a flat plate-like first electrode 61e and second electrode 62e is arranged on the left and right in a vertically opposed manner in the chamber M6. Further, in the chamber M6, the first electrode A fine adjustment mechanism C having a first support portion 33 that vertically supports 61e, a second support portion 34 that vertically supports the second electrode 62e, and a fine adjustment mechanism C and the second support portion 34 are attached. Support means 64 and moving means 65 capable of moving the first electrode 41e in the opposing direction are provided.
The first and second electrodes 41e and 42e, the fine adjustment mechanism D that supports them, and the second support portion 34 are substantially the same as those in the third embodiment.

支持手段６４は、側面から見て四角形の頂点位置に配置され左右方向に平行に延びる４本の梁部材６４ａと、４本の梁部材６４ａの左右端部付近を相互に連結する枠体６４ｂと、下方の前後に配置された２本の梁部材６４ａをチャンバーＭ６の底壁内面上に支持する支持台６４ｃと、４本の梁部材６４ａに内向きに取り付けられた複数の第２支持部３４とを備えてなる。そして、１つの第２電極６２ｅを垂直状に保持するために、４つの第２支持部３４がそれぞれ４本の梁部材６４ａに固定されている。なお、枠体６４ｂは、４本のストレートな部材を組み合わせてなる。   The support means 64 includes four beam members 64a that are arranged at the vertex positions of a rectangle when viewed from the side and extend in parallel in the left-right direction, and a frame body 64b that connects the vicinity of the left and right ends of the four beam members 64a to each other. A support base 64c for supporting the two beam members 64a arranged at the front and rear of the lower side on the inner surface of the bottom wall of the chamber M6, and a plurality of second support portions 34 attached inward to the four beam members 64a. And comprising. In order to hold one second electrode 62e vertically, the four second support portions 34 are fixed to the four beam members 64a, respectively. The frame body 64b is formed by combining four straight members.

移動手段６５は、側面から見て四角形の頂点位置に配置され左右方向に平行に延びる４本の梁部材６５ａと、４本の梁部材６５ａの左右端部付近を相互に連結する枠体６５ｂと、４本の梁部材６５ａに内向きに取り付けられた複数の微調整機構Ｃと、下方の前後に配置された２本の梁部材６５ａをチャンバーＭ６の底壁内面上に左右水平方向にスライド可能に支持する支持ガイドレール６５ｄと、下方の前後に配置された２本の梁部材６５ａに設けられて各支持ガイドレール６５ｄ上を走行するローラ部材６５ｅと、往復駆動部６５ｆと、往復駆動部６５ｆと４本の梁部材６５ａの左端部と連結してこれらを同期的に左右水平方向に往復移動させる連結部６５ｇとを備えてなる。なお、枠体６５ｂは、４本のストレートな部材を組み合わせてなる。   The moving means 65 includes four beam members 65a that are arranged at the vertex positions of a rectangle when viewed from the side and extend in parallel in the left-right direction, and a frame body 65b that connects the vicinity of the left and right ends of the four beam members 65a to each other. A plurality of fine adjustment mechanisms C mounted inwardly on the four beam members 65a and the two beam members 65a arranged on the front and back below can be slid horizontally on the inner surface of the bottom wall of the chamber M6. A support guide rail 65d to be supported on the roller, a roller member 65e provided on the two beam members 65a disposed at the front and rear of the lower side, running on each support guide rail 65d, a reciprocating drive unit 65f, and a reciprocating drive unit 65f. And a connecting portion 65g that is connected to the left end portion of the four beam members 65a and reciprocally moves them in the horizontal direction. The frame body 65b is formed by combining four straight members.

４本の梁部材６５ａと枠体６５ｂとが相互に連結してなる移動構造体は、支持手段６４の４本の梁部材６４ａと枠体６４ｂとが相互に連結してなる支持構造体の内部空間で左右水平方向に往復移動可能な大きさに形成されている。また、２本の支持ガイドレール６５ｄは、２本の支持台６４ｃの間でチャンバーＭ６の底壁内面に固定されている。
そして、１つの第１電極６１ｅを垂直状に保持するために、４つの微調整機構Ｃがそれぞれ４本の梁部材６５ａに固定されている。 The moving structure formed by connecting the four beam members 65a and the frame body 65b to each other is the interior of the support structure formed by connecting the four beam members 64a and the frame body 64b of the support means 64 to each other. It is formed in a size that can reciprocate horizontally in the horizontal direction. The two support guide rails 65d are fixed to the inner surface of the bottom wall of the chamber M6 between the two support bases 64c.
In order to hold one first electrode 61e vertically, four fine adjustment mechanisms C are fixed to the four beam members 65a, respectively.

往復駆動部６５ｆは、２つの油圧シリンダを備える油圧シリンダ機構であり、各油圧シリンダが左右水平方向に伸縮するよう、設置場所の床面に各油圧シリンダを支持する支柱が立設されている。
連結部６５ｇは、２つの油圧シリンダの伸縮ロッドの先端に固定された連結板６５ｇ１と、連結板６５ｇ１と４本の梁部材６５ａの左端とを連結する連結部材６５ｇ２とを備え、往復駆動部６５ｆの左右水平方向の動作を連結板６５ｇ１および４本の連結部材６５ｇ２を介して４本の梁部材６５ａおよびこれらに取り付けられた各微調整機構Ｃに同期的に伝達するように構成されている。
連結部６５ｇの４本の連結部材６５ｇ２は、チャンバーＭ６の左側壁の４箇所に形成された挿通孔を左右方向に移動可能に挿通しており、さらに、チャンバーＭ６の左側壁には４つの挿通孔と連通して各連結部材６５ｇ２をガイドする筒状のガイド部材６５ｈが取り付けられており、挿通孔と連結部材６５ｇ２の間およびガイド部材６５ｈと連結部材６５ｇ２の間の隙間は耐熱シール材にてシールされている。 The reciprocating drive unit 65f is a hydraulic cylinder mechanism including two hydraulic cylinders, and supports that support the hydraulic cylinders are erected on the floor surface of the installation site so that the hydraulic cylinders expand and contract in the horizontal direction.
The connecting portion 65g includes a connecting plate 65g1 fixed to the ends of the telescopic rods of the two hydraulic cylinders, and a connecting member 65g2 that connects the connecting plate 65g1 and the left ends of the four beam members 65a, and a reciprocating drive portion 65f. The left and right horizontal movements are synchronously transmitted to the four beam members 65a and the fine adjustment mechanisms C attached thereto via the connecting plate 65g1 and the four connecting members 65g2.
The four connecting members 65g2 of the connecting portion 65g are inserted through four insertion holes formed in the left side wall of the chamber M6 so as to be movable in the left-right direction. Further, four insertion members are inserted into the left side wall of the chamber M6. A cylindrical guide member 65h that communicates with the hole and guides each connecting member 65g2 is attached, and a gap between the insertion hole and the connecting member 65g2 and between the guide member 65h and the connecting member 65g2 is made of a heat-resistant sealing material. It is sealed.

チャンバーＭ６は、金属製の箱型本体部Ｍ６ａと、本体部Ｍ６ａを設置場所の床面上に支持する金属製の脚部Ｍ６ｂとを備えており、第２電極６２ｅが、２本の導電性接地部材１７および金属製のチャンバーＭ６を介して接地されている。
ガス導入部（ガス導入管）１５は、各第１電極６１ｅの上端に接続されている。
また、電源部Ｅは、実施形態１と同様の構成である。
実施形態６では、移動手段６５によって第１電極６１ｅが左右方向に移動するため、第１電極６１ｅと接続されるガス導入部１５および給電ケーブルＥ３の少なくとも一部は、第１電極６１ｅの移動を許容しかつ追随できるよう可撓性を有している。 The chamber M6 includes a metal box-shaped main body portion M6a and a metal leg portion M6b that supports the main body portion M6a on the floor surface of the installation place, and the second electrode 62e has two conductive properties. It is grounded through the grounding member 17 and a metal chamber M6.
The gas introduction part (gas introduction pipe) 15 is connected to the upper end of each first electrode 61e.
The power supply unit E has the same configuration as that of the first embodiment.
In the sixth embodiment, since the first electrode 61e is moved in the left-right direction by the moving means 65, at least a part of the gas introduction part 15 and the power feeding cable E3 connected to the first electrode 61e causes the movement of the first electrode 61e. Flexible to allow and follow.

このように構成された実施形態６のプラズマ処理装置によれば、移動手段６５の左方向への水平動作によって、図１９（Ａ）に示す往復駆動部の伸長限界位置の微調整機構Ｃが、図１９（Ｂ）に示すように左方向へ移動して第１電極６１ｅを第２支持部３４に圧接したところで停止することにより、電極間距離Ｌ１が決定され、狭電極間プラズマ処理が可能となる。
また、図１９（Ａ）の状態から、移動手段６５の右方向への水平動作によって、第１電極６１ｅが第２電極６２ｅから離間して電極間距離を広くすることができ、第２電極６２ｅに沿って基板Ｓを容易に設置する、あるいは第２電極６２ｅから基板Ｓを容易に取り出すことができる。
また、図１９（Ｂ）の状態から、微調整機構Ｃが所定距離だけ右方向へ移動する、あるいは図１９（Ａ）の状態から微調整機構Ｃが所定距離だけ左方向へ移動して第１電極６１ｅが第２支持部３４に当接する前に停止することにより、電極間距離Ｌ１よりも広い広電極間距離が決定され、広電極間プラズマ処理が可能となる。 According to the plasma processing apparatus of the sixth embodiment configured as described above, the fine adjustment mechanism C for the extension limit position of the reciprocating drive unit shown in FIG. As shown in FIG. 19B, by moving to the left and stopping when the first electrode 61e is brought into pressure contact with the second support portion 34, the interelectrode distance L1 is determined, and the plasma treatment between the narrow electrodes can be performed. Become.
Also, from the state of FIG. 19A, the first electrode 61e can be separated from the second electrode 62e by the horizontal movement of the moving means 65 in the right direction, and the distance between the electrodes can be increased, and the second electrode 62e. It is possible to easily install the substrate S along or to take out the substrate S from the second electrode 62e.
Further, from the state of FIG. 19B, the fine adjustment mechanism C moves to the right by a predetermined distance, or from the state of FIG. 19A, the fine adjustment mechanism C moves to the left by a predetermined distance. By stopping before the electrode 61e contacts the second support portion 34, a wide interelectrode distance larger than the interelectrode distance L1 is determined, and the wide interelectrode plasma processing is possible.

すなわち、この実施形態６の成膜用プラズマ処理装置も、実施形態４および５と同様に、プラズマ処理の目的に応じて狭電極間プラズマ処理工程と広電極間プラズマ処理工程のいずれか一方を行うか、或いは狭電極間プラズマ処理工程と広電極間プラズマ処理工程を任意の順で連続的に行うプラズマ処理方法を実施することができる。
さらに、このプラズマ処理装置によれば、上述の狭電極間プラズマ処理工程および広電極間プラズマ処理工程に先立って、実施形態３と同様に、１つ以上の（好ましくは４つの）微調整機構Ｃにおけるボルト部材ｃ2を回して第１支持部３３を左右方向に微動させて、第１電極６１ｅと第２電極６２ｅの中央部における電極間距離を微調整することにより、各プラズマ処理工程で高精度に成膜することができる。
なお、実施形態６では、移動構造体の下部の梁部材６５ａにローラ６５ｅを設けて支持ガイドレール６５ｄ上を走行させる構成を例示したが、支持ガイドレール６５ｄに複数のローラを設けて梁部材６５ａを走行させるようにしてもよい。 That is, the film forming plasma processing apparatus of the sixth embodiment also performs either the narrow electrode plasma processing step or the wide electrode plasma processing step in accordance with the purpose of the plasma processing, as in the fourth and fifth embodiments. Alternatively, it is possible to implement a plasma processing method in which the narrow electrode plasma processing step and the wide electrode plasma processing step are successively performed in an arbitrary order.
Furthermore, according to this plasma processing apparatus, one or more (preferably four) fine adjustment mechanisms C are provided in the same manner as in the third embodiment prior to the above-described narrow electrode plasma processing step and wide electrode plasma processing step. By rotating the bolt member c2 in FIG. 5 and finely moving the first support portion 33 in the left-right direction to finely adjust the distance between the electrodes at the center of the first electrode 61e and the second electrode 62e, it is possible to increase the height in each plasma processing step. The film can be formed with high accuracy.
In the sixth embodiment, the configuration is illustrated in which the roller 65e is provided on the beam member 65a below the moving structure and travels on the support guide rail 65d. However, the beam member 65a is provided with a plurality of rollers on the support guide rail 65d. You may make it run.

（他の実施形態）
１．実施形態１（図１〜４）では、第１および第２電極１１ｅ、１２ｅ側に微調整機構Ａ（ボルト機構）を設けた場合を例示したが、第１および第２支持部１３、１４の水平片部１３ａ、１４ａ側に微調整機構Ａを設けてもよい（図示省略）。この場合、各水平片部１３ａ、１４ａに形成した垂直方向のネジ孔にボルト部材ａ2を螺着して、各ボルト部材ａ2の先端（上端）を各電極１１ｅ、１２ｅの下面に当接可能とし、水平片部１３ａまたは１４ａの上面からのボルト部材ａ2の先端の突出量を調整することによって電極間距離を微調整することができる。
２．実施形態２（図５）で説明した微調整機構Ｂ１、Ｂ２（くさび機構）はボルト部材ｂ1を定位置で回転させる構成であったが、ボルト部材ｂ1を水平移動可能なようにしてもよい。この場合、貫通孔２３ｂ1、２４ａ1をネジ孔に変更してボルト部材ｂ1を螺着させ、くさび部材ｂ2のネジ孔ｂ21を貫通孔に変更しかつボルト部材ｂ1の先端側のネジ山を無くして貫通孔に挿通させ、ボルト部材ｂ1における貫通孔の両側部分にＣ形リングを取り付ける。このように構成すれば、ボルト部材ｂ1を回すことにより、ボルト部材ｂ1と共にくさび部材ｂ2を水平移動させることができる。
３．実施形態４（図９〜１４）および実施形態５（図１５）では、電極側に微調整機構ＡおよびＤ（ボルト機構）を設けた場合を例示したが、支持部側および支持片側に微調整機構Ｂ１、Ｂ２（図５参照）を設けてもよい。
４．実施形態３（図６〜８）および実施形態６（図１６〜１９）では、第１支持部３３側にのみ微調整機構Ｃを設けた場合を例示したが、第２支持部３４にも微調整機構Ｃを設けてもよい。この場合、第１および第２支持部３３、３４において、第１および第２電極が最も接近した位置を基準とし、電極の反りの方向に応じて第１または第２支持部３３、３４の支持ブロックを一方向に移動させて電極間距離を微調整することができる。
５．実施形態１〜６では、第１電極をカソード電極とし、第２電極をアノード電極とした成膜用プラズマ処理装置の場合を例示したが、実施形態１〜６で説明した各種の微調整機構は、例えばシリコン基板の表面をエッチング処理するエッチング用プラズマ処理装置にも適用可能である。なお、この場合、第１電極をアノード電極とし、基板が設置される第２電極をカソード電極として装置構成を変更する。 (Other embodiments)
1. In the first embodiment (FIGS. 1 to 4), the fine adjustment mechanism A (bolt mechanism) is provided on the first and second electrodes 11e and 12e side. You may provide the fine adjustment mechanism A in the horizontal piece part 13a, 14a side (illustration omitted). In this case, a bolt member a 2 is screwed into a vertical screw hole formed in each horizontal piece 13a, 14a, and the tip (upper end) of each bolt member a 2 is brought into contact with the lower surface of each electrode 11e, 12e. The distance between the electrodes can be finely adjusted by adjusting the amount of protrusion of the tip of the bolt member a 2 from the upper surface of the horizontal piece 13a or 14a.
2. The fine adjustment mechanisms B1 and B2 (wedge mechanisms) described in the second embodiment (FIG. 5) are configured to rotate the bolt member b 1 at a fixed position. However, the bolt member b 1 can be moved horizontally. Good. In this case, the through holes 23b 1 and 24a 1 are changed to screw holes and the bolt member b 1 is screwed, the screw hole b 21 of the wedge member b 2 is changed to the through hole, and the front end side of the bolt member b 1 is changed. The thread is removed and inserted into the through hole, and C-shaped rings are attached to both side portions of the through hole in the bolt member b 1 . According to this structure, by turning the bolt member b 1, the wedge member b 2 with bolt b 1 they can be moved horizontally.
3. In the fourth embodiment (FIGS. 9 to 14) and the fifth embodiment (FIG. 15), the fine adjustment mechanisms A and D (bolt mechanisms) are provided on the electrode side, but fine adjustment is performed on the support portion side and the support piece side. Mechanisms B1 and B2 (see FIG. 5) may be provided.
4). In the third embodiment (FIGS. 6 to 8) and the sixth embodiment (FIGS. 16 to 19), the case where the fine adjustment mechanism C is provided only on the first support portion 33 side is illustrated. An adjustment mechanism C may be provided. In this case, the first and second support portions 33 and 34 support the first or second support portions 33 and 34 according to the direction of warping of the electrodes with the position where the first and second electrodes are closest to each other as a reference. The distance between the electrodes can be finely adjusted by moving the block in one direction.
5). In the first to sixth embodiments, the case of the plasma processing apparatus for film formation in which the first electrode is a cathode electrode and the second electrode is an anode electrode is exemplified. Various fine adjustment mechanisms described in the first to sixth embodiments are described below. For example, the present invention can also be applied to an etching plasma processing apparatus for etching the surface of a silicon substrate. In this case, the apparatus configuration is changed with the first electrode as the anode electrode and the second electrode on which the substrate is installed as the cathode electrode.

１１ｅ、２１ｅ、３１ｅ、４１ｅ、６１ｅ 第１電極
１２ｅ、２２ｅ、３２ｅ、４２ｅ、６２ｅ 第２電極
１３、２３、３３、５３ 第１支持部
１３ａ、１４ａ、２３ｃ、２４ａ 水平片部
１４、２４、３４、５４ 第２支持部
１５ ガス導入部（ガス導入管）
１７ 接地部材
２３ｂ1、２４ａ1、ｃ21 貫通孔
２３ｂ、２４ｂ 固定部
４５、６４ 支持手段
４６、６５ 移動手段
Ａ、Ｂ１、Ｂ２、Ｃ、Ｄ 微調整機構
ａ1 ネジ孔部
ａ2、ｂ1、ｃ2 ボルト部材
ａ11、ｂ21、３３ａ ネジ孔
ｂ22 くさび部材
ｃ1 基部
Ｅ 電源部
Ｇ１ 反応ガス
Ｌ１ 電極間距離
Ｍ１、Ｍ２、Ｍ４、Ｍ６ チャンバー 11e, 21e, 31e, 41e, 61e First electrode 12e, 22e, 32e, 42e, 62e Second electrode 13, 23, 33, 53 First support portion 13a, 14a, 23c, 24a Horizontal piece portion 14, 24, 34 , 54 Second support part 15 Gas introduction part (gas introduction pipe)
17 grounding member 23b 1, 24a 1, c 21 through holes 23b, 24b fixed portion 45,64 support means 46,65 mobile unit A, B1, B2, C, D fine adjustment mechanism a 1 threaded hole a 2, b 1 , C 2 bolt member a 11 , b 21 , 33a screw hole b 22 wedge member c 1 base E power supply G1 reaction gas L1 distance between electrodes M1, M2, M4, M6 chamber

Claims (8)

チャンバーと、チャンバー内に配置されてプラズマ放電を発生させる平板形の第１電極および第２電極と、第１電極と第２電極を平行に対向してそれぞれ支持する第１支持部および第２支持部と、第１および第２支持部にて支持された第１電極と第２電極を相対的にねじで移動させて電極間距離を微調整する微調整機構とを備えたことを特徴とするプラズマ処理装置。   A chamber, a flat plate-shaped first electrode and a second electrode disposed in the chamber to generate plasma discharge, and a first support and a second support for supporting the first electrode and the second electrode in parallel oppositely, respectively. And a fine adjustment mechanism that finely adjusts the distance between the electrodes by relatively moving the first electrode and the second electrode supported by the first and second support portions with screws. Plasma processing equipment. 前記微調整機構が、第１電極と第２電極の少なくとも一方を移動させるように、第１電極と第２電極の少なくとも一方に設けられた請求項１に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, wherein the fine adjustment mechanism is provided on at least one of the first electrode and the second electrode so as to move at least one of the first electrode and the second electrode. 前記微調整機構が、第１電極と第２電極の少なくとも一方を移動させるように、第１支持部と第２支持部の少なくとも一方に設けられた請求項１に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, wherein the fine adjustment mechanism is provided on at least one of the first support part and the second support part so as to move at least one of the first electrode and the second electrode. 前記第１および第２支持部は、第１および第２電極の外周縁を部分的に支持するようそれぞれ複数設けられると共に、第１および第２電極を水平に支持する水平片部を有し、
前記微調整機構が、第１電極と第２電極の少なくとも一方における前記水平片部との対向位置を垂直方向に貫通するネジ孔を有するネジ孔部と、水平片部と当接可能なように前記ネジ孔に螺着されたボルト部材とを備えたボルト機構であり、ボルト部材を垂直方向に螺進退させることにより、第１電極と第２電極を相対的に垂直方向に移動させて電極間距離を微調整するよう構成された請求項２に記載のプラズマ処理装置。 The first and second support portions are provided in plural so as to partially support the outer peripheral edges of the first and second electrodes, and have a horizontal piece portion for horizontally supporting the first and second electrodes,
The fine adjustment mechanism can come into contact with the horizontal piece portion and a screw hole portion having a screw hole penetrating in a vertical direction through a position facing the horizontal piece portion in at least one of the first electrode and the second electrode. A bolt mechanism including a bolt member screwed into the screw hole, wherein the first electrode and the second electrode are moved in the vertical direction relatively by moving the bolt member forward and backward in the vertical direction. The plasma processing apparatus according to claim 2, configured to finely adjust the distance. 前記第１および第２支持部は、第１および第２電極の外周縁を部分的に支持するようそれぞれ複数設けられると共に、第１および第２電極を水平に支持する水平片部を有し、さらに、第１支持部および第２支持部の少なくとも一方が前記微調整機構を有しており、
前記微調整機構が、前記水平片部に固設された水平方向の貫通孔を有する固定部と、前記貫通孔に定位置で回転可能に挿入されたボルト部材と、該ボルト部材に螺着するネジ孔を有し第１電極と第２電極の少なくとも一方と水平片部との間に挿入され水平片部上で水平方向に移動可能に支持されたくさび部材とを備えたくさび機構であり、ボルト部材を回してくさび部材を水平片部上で水平方向に移動させることにより、第１電極と第２電極を相対的に垂直方向に移動させて電極間距離を微調整するよう構成された請求項２に記載のプラズマ処理装置。 The first and second support portions are provided in plural so as to partially support the outer peripheral edges of the first and second electrodes, and have a horizontal piece portion for horizontally supporting the first and second electrodes, Furthermore, at least one of the first support part and the second support part has the fine adjustment mechanism,
The fine adjustment mechanism is fixed to the horizontal piece and has a fixing portion having a horizontal through hole, a bolt member rotatably inserted into the through hole at a fixed position, and screwed to the bolt member. A wedge mechanism including a wedge member inserted between at least one of the first electrode and the second electrode and the horizontal piece portion and supported so as to be movable in the horizontal direction on the horizontal piece portion; A structure in which the distance between the electrodes is finely adjusted by rotating the bolt member and moving the rust member in the horizontal direction on the horizontal piece to relatively move the first electrode and the second electrode in the vertical direction. Item 3. The plasma processing apparatus according to Item 2. 前記第１および第２支持部は、第１および第２電極を垂直に支持する支持ブロックからなり、かつ、第１および第２電極の外周縁を部分的に支持するようそれぞれ複数設けられ、
前記微調整機構が、第１支持部および第２支持部の少なくとも一方の支持ブロックと、支持ブロックをスライド可能に支持する基部と、該基部に水平方向に形成された貫通孔に定位置で回転可能に挿入されかつ支持ブロックに水平方向に形成されたネジ孔に羅着するボルト部材とを備えたスライド機構であり、ボルト部材を回して支持ブロックを基部上で水平方向に移動させることにより、第１電極と第２電極を相対的に水平方向に移動させて電極間距離を微調整するよう構成された請求項３に記載のプラズマ処理装置。 The first and second support portions include a support block that vertically supports the first and second electrodes, and a plurality of the first and second support portions are provided to partially support the outer peripheral edges of the first and second electrodes, respectively.
The fine adjustment mechanism rotates at a fixed position in a support block of at least one of the first support portion and the second support portion, a base portion that slidably supports the support block, and a through-hole formed in the base portion in a horizontal direction. A sliding mechanism including a bolt member that is inserted in the support block and is screwed into a screw hole formed in a horizontal direction on the support block, and by rotating the bolt member to move the support block horizontally on the base, The plasma processing apparatus of Claim 3 comprised so that a 1st electrode and a 2nd electrode might be moved to a horizontal direction relatively, and the distance between electrodes may be adjusted finely. 第１支持部と第２支持部を相対的に移動させることにより第１電極と第２電極を相対的に対向方向に移動させる移動手段をさらに備えた請求項１〜６のいずれか１つに記載のプラズマ処理装置。   7. The apparatus according to claim 1, further comprising moving means for relatively moving the first electrode and the second electrode in opposite directions by relatively moving the first support portion and the second support portion. The plasma processing apparatus as described. 第１および第２電極が複数対設けられると共に、対応する第１および第２支持部がそれぞれ設けられた請求項１〜７のいずれか１つに記載のプラズマ処理装置。   The plasma processing apparatus according to any one of claims 1 to 7, wherein a plurality of pairs of first and second electrodes are provided, and corresponding first and second support portions are respectively provided.
JP2009056558A 2009-03-10 2009-03-10 Plasma processing apparatus Pending JP2010212427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009056558A JP2010212427A (en) 2009-03-10 2009-03-10 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009056558A JP2010212427A (en) 2009-03-10 2009-03-10 Plasma processing apparatus

Publications (1)

Publication Number Publication Date
JP2010212427A true JP2010212427A (en) 2010-09-24

Family

ID=42972311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009056558A Pending JP2010212427A (en) 2009-03-10 2009-03-10 Plasma processing apparatus

Country Status (1)

Country Link
JP (1) JP2010212427A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113853054A (en) * 2021-11-05 2021-12-28 北京环境特性研究所 Plasma torch and gap adjusting method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243600A (en) * 2003-06-04 2005-09-08 Sekisui Chem Co Ltd Plasma processing apparatus
JP2006134830A (en) * 2004-11-09 2006-05-25 Seiko Epson Corp Plasma treatment apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243600A (en) * 2003-06-04 2005-09-08 Sekisui Chem Co Ltd Plasma processing apparatus
JP2006134830A (en) * 2004-11-09 2006-05-25 Seiko Epson Corp Plasma treatment apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113853054A (en) * 2021-11-05 2021-12-28 北京环境特性研究所 Plasma torch and gap adjusting method thereof
CN113853054B (en) * 2021-11-05 2023-11-14 北京环境特性研究所 Plasma torch and gap adjusting method thereof

Similar Documents

Publication Publication Date Title
JP4951536B2 (en) Substrate mounting table and substrate processing apparatus
CN1749430A (en) Pecvd susceptor support construction
JP6888007B2 (en) Wafer edge ring lifting solution
JP4558067B2 (en) Plasma processing equipment
KR101220736B1 (en) Plasma processing apparatus
KR20160092504A (en) Plasma processing apparatus
DE10352606B4 (en) The plasma processing apparatus
JP4547443B2 (en) Plasma processing apparatus and plasma processing method using the same
KR20210157212A (en) Leveling apparatus of substrate treating equipment
JP2010212427A (en) Plasma processing apparatus
CN112856164A (en) Horizontal adjusting device for mechanical equipment installation
KR20090025070A (en) Lower eletrode assembly of manufacturing fpd
JP2010182937A (en) Plasma cleaning method
KR20140009485A (en) Plasma film forming apparatus and plasma film forming method
KR102644510B1 (en) Leveling apparatus of substrate treating equipment
KR20100039980A (en) Gap adjuster between shower head and heater block for semiconductor manufacturing apparatus
KR101212941B1 (en) Flexible shower head
KR101926984B1 (en) Plasma Source for High-Density Thin Film Deposition
KR100891614B1 (en) Chemical Vapor Deposition Apparatus for Flat Display
JP2013131475A (en) Plasma processing apparatus and semiconductor device
JP2004095834A (en) Method and equipment for heating plate-shaped work
JPH0551953U (en) Plasma processing device
JP5393667B2 (en) Plasma processing apparatus, film forming method and etching method using the same
KR101391720B1 (en) Apparatus for processing substrate
JP4047668B2 (en) Plate work heating device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110223

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111220

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130122

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130521