JP2010153927A - 高周波用途のためのガラス材料 - Google Patents
高周波用途のためのガラス材料 Download PDFInfo
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- JP2010153927A JP2010153927A JP2010086382A JP2010086382A JP2010153927A JP 2010153927 A JP2010153927 A JP 2010153927A JP 2010086382 A JP2010086382 A JP 2010086382A JP 2010086382 A JP2010086382 A JP 2010086382A JP 2010153927 A JP2010153927 A JP 2010153927A
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- 239000011521 glass Substances 0.000 title claims abstract description 267
- 239000000463 material Substances 0.000 title claims abstract description 116
- 239000004020 conductor Substances 0.000 claims abstract description 180
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 239000010410 layer Substances 0.000 claims description 273
- 238000000034 method Methods 0.000 claims description 71
- 238000000576 coating method Methods 0.000 claims description 42
- 239000011248 coating agent Substances 0.000 claims description 41
- 238000007740 vapor deposition Methods 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 21
- 239000011247 coating layer Substances 0.000 claims description 19
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 14
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 9
- 238000000206 photolithography Methods 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 4
- 238000000869 ion-assisted deposition Methods 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 238000000313 electron-beam-induced deposition Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 18
- 238000012360 testing method Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 7
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
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- 238000007650 screen-printing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- 230000008646 thermal stress Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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Abstract
本発明は、基板上の高周波用途に適した導体構造体の形成に適したガラス材料及び高周波基板を提供することを目的とする。
【解決手段】
高周波基板または高周波導体構成の高周波特性を改善するために、本発明は、塗布層として特に0.05μm〜5mmの範囲の層厚を有する、1GHzを超える少なくともある周波数範囲において70×10−4以下の損失係数tanδを有する高周波基板または高周波導体構成用の絶縁層を形成するためのガラス材料を提案する。
【選択図】 図1
Description
組成 組成範囲
SiO2 40〜90
B2O3 10〜40
Al2O3 0〜5
K2O 0〜5
Li2O 0〜3
Na2O 0〜3
上記数値は重量百分率である。
組成 組成範囲
SiO2 60〜90
B2O3 10〜30
Al2O3 0〜3
K2O 0〜3
Li2O 0〜2
Na2O 0〜2
組成 ガラス1 ガラス2
SiO2 84±5 71±5
B2O3 11±5 26±5
Na2O 2±0.2 0.5±0.2
Li2O 0.3±0.2 0.5±0.2
K2O 0.3±0.2 1.0±0.2
Al2O3 0.5±0.2 1.0±0.2
20℃〜300℃の熱膨張係数:α20〜300=3.2×10−6/K
屈折率: nd=1.465
転移温度: Tg=466℃
軟化点: TEW=742℃
動作点: TVA=1207℃
40GHzでの相対誘電率: εR=3.9
40GHzでの損失係数: tanδ=26×10−4
密度: ρ=2.12g/cm3
耐水性クラス2
耐酸性クラス2
耐アルカリ性クラス3
この特に適したガラスを以下ではガラスG018−189とも呼ぶ。
20℃〜300℃の熱膨張係数:α20〜300=2.75×10−6/K
屈折率: nd=1.47
転移温度: Tg=562℃
40GHzでの相対誘電率: εR=5
40GHzでの損失係数: tanδ=40×10−6
密度: ρ=2.2g/cm3
耐水性クラス: 1
耐酸性クラス: 1
耐アルカリ性クラス2
同様に特に適したこのガラスを以下ではガラス8329とも呼ぶ。
図15〜17はガラス8329を用いた埋め込み共平面導波路の測定値を示す。
2 半導体ウェハ
3 1の第1側
4、41、42 導体構成
5 1の第2側
6 1の上の導電構造物を有する層
61〜64 6の導体構造体
71〜74 コンタクト−コネクション領域
8 コンタクト−コネクション領域71〜74の9の開口部
9、91〜93 蒸着コーディングガラス層
10 構成要素
11 導体構造物を有する層
100、111、112、113 導体構造体
13 最終的な蒸着コーディングガラス層
14 蒸着コーディングガラスの封止層
15 バイア
17 溶着ビード
19 導電性材料
21 中間層のレジスト構造体
23 受動電気構成要素
25 導電層
27 フォトリソグラフィで構造化可能な中間層
29 分離軸線
31 可塑性カバー
33 能動半導体領域
35 33の接続場所
37 1を貫通するバイア
39 受動層
43 37の導電性充填物
75、76 コンタクト−コネクション領域
90 レジスト構造体上の蒸着コーティングガラス層の領域
Claims (56)
- 1GHzを超える少なくともある周波数範囲において70×10−4以下の損失係数tanδを有し、塗布層(9、91、92、93、13)として特に0.05μm〜5mmの範囲、好適には0.05μm〜1mmの範囲の層厚を有する、高周波基板または高周波導体構成用の絶縁層を形成するガラス材料であって、重量百分率で以下の組成を有する:
SiO2 71±5、
B2O3 26±5、
Al2O3 1±0.2、
K2O 1±0.2、
Li2O 0.5±0.2、
Na2O 0.5±0.2。
- ガラス材料を含み、かつ1GHzを超える少なくともある周波数範囲において70×10−4以下の損失係数tanδを有し、特に0.05μm〜5mmの範囲、好適に0.05μm〜1mmの範囲の層厚を有する高周波基板または高周波導体構成用の絶縁層(9、91、92、93、13)。
- 約40GHzの範囲の周波数において50×10−4以下の損失係数tanδを有する請求項1に記載の絶縁層(9、91、92、93、13)。
- 40GHzの周波数において30×10−4以下の損失係数tanδを有する請求項1乃至3の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 蒸着されたガラス材料の堆積によって形成される請求項1乃至4の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 電子ビーム蒸着法によって蒸着されたガラス材料の堆積によって形成される請求項1乃至5の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 1300℃より低い動作点において形成される請求項1乃至6の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 1GHzを超える少なくともある周波数範囲において5以下の相対誘電率εRを有する請求項1乃至7の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 40GHzの周波数において、5以下の相対誘電率εR、特に5より小さい相対誘電率εRを有する請求項1乃至8の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 20℃〜300℃の温度範囲において2.9×10−6/K〜3.5×10−6/Kの範囲でα20〜300の熱膨張係数を有する請求項1乃至9の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 20℃〜300℃の温度範囲において熱膨張係数α20〜300=(3.2±0.2)×10−6/Kを有する請求項1乃至10の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 絶縁層が基板材料の熱膨張係数とは20℃〜300℃の温度範囲において1×10−6/K未満だけ異なる熱膨張係数を有する、基板材料に塗布される請求項1乃至11の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 耐酸性クラス2までの耐酸性を有する請求項1乃至12の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 耐アルカリ性クラス3までの耐アルカリ性を有する請求項1乃至13の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 重量百分率で以下の組成を有するガラス材料から形成される請求項1乃至14の何れか1項に記載の絶縁層(9、91、92、93、13):
SiO2 40〜90、
B2O3 10〜40、
Al2O3 0〜5、
K2O 0〜5、
Li2O 0〜3、
Na2O 0〜3。
- 重量百分率で以下の組成を有するガラス材料から形成される請求項1乃至15の何れか1項に記載の絶縁層(9、91、92、93、13):
SiO2 60〜90、
B2O3 105〜305、
Al2O3 0〜3、
K2O 0〜3、
Li2O 0〜2、
Na2O 0〜2。
- 重量百分率で以下の組成を有するガラス材料から形成される請求項1乃至16の何れか1項に記載の絶縁層(9、91、92、93、13):
SiO2 71±5、
B2O3 26±5、
Al2O3 1±0.2、
K2O 1±0.2、
Li2O 0.5±0.2、
Na2O 0.5±0.2。
- 重量百分率で以下の組成を有するガラス材料から形成される請求項1乃至17の何れか1項に記載の絶縁層(9、91、92、93、13):
SiO2 84±5、
B2O3 11±5、
Al2O3 0.5±0.2、
K2O 0.3±0.2、
Li2O 0.3±0.2、
Na2O 2±0.2。
- 高周波導体構成(4、41、42)を有する構成要素(10)を形成する方法であって、
特に請求項1に記載のガラス材料を用いて、少なくとも1つの開口部(8)を有する、特に請求項1乃至18の何れか1項に記載の構造化されたガラス層(9、91、92、93、13)を基板(1)上のコンタクト−コネクション領域(71〜74)の上に堆積させる工程と、
前記コンタクト−コネクション領域(71〜74)と電気的に接触する、少なくとも1つの導体構造体(100、111、112、113)を前記ガラス層(9、91、92、93)に塗布する工程とから構成される方法。
- 前記ガラス層がガラス材料の蒸着によって堆積される請求項19に記載の方法。
- 前記少なくとも1つの導体構造体と接触する少なくとも1つの受動電気構成要素が、前記ガラス層(9、91、92、93)に塗布される請求項19または20に記載の方法。
- 先の段階で塗布された導体構造体のコンタクト−コネクション領域に後の段階で塗布される導体構造体を接触させた状態で、構造化されたガラス層を堆積させる前記工程と、少なくとも1つの導体構造体(111、112、113)を塗布する前記工程が多数回にわたって実行される請求項19乃至21の何れか1項に記載の方法。
- 少なくとも1つの開口部(8)を有する構造化されたガラス層(9、91、92、93、13)を蒸着コーティングによってコンタクト−コネクション領域(71〜74)の上に堆積させる前記工程が、
前記コンタクト−コネクション領域を被覆する構造化された中間層(21)を塗布する工程と、
蒸着コーティングによって前記基板および該基板上に存在する前記中間層(21)にガラス層(9、91、92、93、13)を塗布する工程であり、該ガラス層(9、91、92、93、13)の厚さは前記構造化された中間層(21)の厚さより薄いことが好ましい工程と、
前記構造化された中間層(21)上に位置する前記ガラス層(9、91、92、93、13)のそれら領域(90)がガラス層によって持ち上げられた状態で、前記構造化された中間層(21)を除去する工程とから構成される請求項19乃至22の何れか1項に記載の方法。
- 蒸着コーティングによって前記ガラス層を塗布する前に、前記コンタクト−コネクション領域に隣接する領域に対して突出する導電性材料(19)が、前記少なくとも1つのコンタクト−コネクション領域(71〜74)に塗布され、且つこの材料(19)が前記構造化された中間層(21)によって被覆される請求項23に記載の方法。
- 前記構造化された中間層(21)が印刷またはフォトリソグラフィ構造化によって形成される請求項23又は24に記載の方法。
- 導体構造体の塗布が、少なくとも凹状に構造化された中間層を塗布する工程および導電性材料を堆積させる工程を含んだ請求項19乃至25の何れか1項に記載の方法。
- 構造化されたガラス層(9、91、92、93、13)を堆積させる工程の前に、少なくとも1つの導体構造体、特に相互接続が前記基板に塗布される請求項19乃至26の何れか1項に記載の方法。
- 請求項1乃至17の何れか1項に記載のガラス材料を用いて最終ガラス層(13)を堆積し、かつ該最終ガラス層(13)に少なくとも1つのバイア(15)を形成する工程
を含む請求項19乃至27の何れか1項に記載の方法。
- 前記基板(1)が能動半導体領域(33)を有する半導体基板を含み、前記少なくとも1つの導体構造体(100、111、112、113)が、それが塗布されている間に、前記能動半導体領域(33)の接続場所(3、5)に接続される請求項19乃至28の何れか1項に記載の方法。
- 前記少なくとも1つの導体構造体(100、111、112、113)が、それが塗布されている間に前記基板(1)を通るバイア(37)に接続される請求項19乃至29の
何れか1項に記載の方法。
- 蒸着コーティングによって前記ガラス層(9、91、92、93、13)を塗布する間に、前記基板(1)が50℃〜200℃、好適には80℃〜120℃に保たれる請求項19乃至30の何れか1項に記載の方法。
- 前記ガラス層(9、91、92、93)が、1分当たり少なくとも0.1μmの層厚の堆積速度の蒸着コーティングによって塗布される請求項19乃至31の何れか1項に記載の方法。
- 前記ガラス層(9、91、92、93、13)内の前記少なくとも1つの開口部(8)が導電性材料(19)で充填される請求項19乃至32の何れか1項に記載の方法。
- 前記基板(1)がまだ前記ウェハに接合されている間に被覆される請求項19乃至33の何れか1項に記載の方法。
- 蒸着コーティングによるガラス層(9、91、92、93、13)の塗布がプラズマ・イオン支援堆積法(PIAD)によって行われる請求項19乃至34の何れか1項に記載の方法。
- 特に請求項19乃至35の何れか1項に記載の方法を用いて形成される、高周波導体構成(4、41、42)を有する構成要素(10)であって、
少なくとも1つのコンタクト−コネクション領域(71〜74)を有する基板(1)と、
前記基板(1)の少なくとも一方の側(3、5)上にあって、バイアを有する少なくとも1つの開口部(8)を備えたガラス層であり、該ガラス層は特に請求項1乃至17の何れか1項に記載のガラス材料の蒸着によって堆積され、かつ該バイアは前記コンタクト−コネクション領域(71〜74)と電気的に接触するガラス層と、
前記バイアと接触する、前記ガラス層(9、91、92、93)上の少なくとも1つの導体構造体(100、111、112、113)とを備えた構成要素(10)。
- 前記少なくとも1つの導体構造体(100、111、112、113)に接続された少なくとも1つの受動電気構成要素(23)を前記ガラス層(9、91、92、93、13)上に含む請求項36に記載の構成要素。
- 蒸着コーティングによって塗布され、かつ各々該ガラス層に塗布された導体構造体(100、111、112、113)を含む少なくとも2つのガラス層(9、91、92、93、13)を有する多層導体構成(4、41、42)を備え、第1のガラス層上の導体構造体がバイア(15)を介して第2のガラス層上の導体構造体と電気的に接触する請求項36及び37の何れか1項に記載の構成要素。
- 前記基板(1)が、前記基板(1)の第1の側(3)上に、前記導体構造体に接続された少なくとも1つの能動半導体領域(33)を有する半導体基板を含む請求項36乃至38の何れか1項に記載の構成要素。
- 1GHzを超える少なくともある周波数範囲において70×10−4以下の損失係数tanδを有し、塗布層(9、91、92、93、13)として特に0.05μm〜5mmの範囲、好適には0.05μm〜1mmの範囲の層厚を有する、高周波基板または高周波導体構成用の絶縁層を形成するガラス材料の使用。
- 前記材料が、特に0.05μm〜5mmの範囲の層厚を有する塗布層(9、91、92、93、13)として、約40GHzの範囲の周波数において50×10−4以下の損失係数tanδを有する請求項2に記載のガラス材料の使用。
- 前記材料が、特に0.05μm〜5mmの範囲の層厚を有する塗布層(9、91、92、93、13)として、40GHzの周波数において30×10−4以下の損失係数tanδを有する請求項40及び41の何れか1項に記載のガラス材料の使用。
- 層(9、91、92、93、13)を堆積させるために、前記ガラス材料を蒸着することのできる請求項40乃至42の何れか1項に記載のガラス材料の使用。
- 電子ビーム蒸着法によって前記ガラス材料を蒸着することのできる請求項40乃至43の何れか1項に記載のガラス材料の使用。
- 前記ガラス材料が1300℃より低い動作点を有する請求項40乃至44の何れか1項に記載のガラス材料の使用。
- 前記ガラス材料が、塗布層として特に0.05μm〜5mmの範囲の層厚を有する、1GHzを超える少なくともある周波数範囲において5以下の相対誘電率εRを有する請求項40乃至45の何れか1項に記載のガラス材料の使用。
- 前記ガラス材料が、塗布層として特に0.05μm〜5mmの範囲の層厚を有する、40GHzの周波数において、5以下の相対誘電率εR、特に5より小さい相対誘電率εRを有する請求項40乃至46の何れか1項に記載のガラス材料の使用。
- 前記ガラス材料が、塗布層として特に0.05μm〜5mmの範囲の層厚を有する、20℃〜300℃の温度範囲において2.9×10−6/K〜3.5×10−6/Kの範囲でα20〜300の熱膨張係数を有する請求項40乃至47の何れか1項に記載のガラス材料の使用。
- 前記ガラス材料が、塗布層として特に0.05μm〜5mmの範囲の層厚を有する、20℃〜300℃の温度範囲において熱膨張係数α20〜300=(3.2±0.2)×10−6/Kを有する請求項40乃至48の何れか1項に記載のガラス材料の使用。
- 前記ガラス材料が、塗布層として特に0.05μm〜5mmの範囲の層厚を有する、基板材料の熱膨張係数とは20℃〜300℃の温度範囲において1×10−6/K未満だけ異なる熱膨張係数を有する請求項40乃至49の何れか1項に記載のガラス材料の使用。
- 前記ガラス材料が、塗布層として、耐酸性クラス2までの耐酸性を有する請求項40乃至50の何れか1項に記載のガラス材料の使用。
- 前記ガラス材料が、塗布層として、耐アルカリ性クラス3までの耐アルカリ性を有する請求項40乃至51の何れか1項に記載のガラス材料の使用。
- 重量百分率で以下の組成を有する請求項40乃至52の何れか1項に記載のガラス材料の使用:
SiO2 40〜90、
B2O3 10〜40、
Al2O3 0〜5、
K2O 0〜5、
Li2O 0〜3、
Na2O 0〜3。
- 重量百分率で以下の組成を有する請求項40乃至53の何れか1項に記載のガラス材料の使用:
SiO2 60〜90、
B2O3 105〜305、
Al2O3 0〜3、
K2O 0〜3、
Li2O 0〜2、
Na2O 0〜2。
- 重量百分率で以下の組成を有する請求項40乃至54の何れか1項に記載のガラス材料の使用:
SiO2 71±5、
B2O3 26±5、
Al2O3 1±0.2、
K2O 1±0.2、
Li2O 0.5±0.2、
Na2O 0.5±0.2。
- 重量百分率で以下の組成を有する請求項40乃至55の何れか1項に記載のガラス材料の使用:
SiO2 84±5、
B2O3 11±5、
Al2O3 0.5±0.2、
K2O 0.3±0.2、
Li2O 0.3±0.2、
Na2O 2±0.2。
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Also Published As
Publication number | Publication date |
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CN1656612A (zh) | 2005-08-17 |
JP5027992B2 (ja) | 2012-09-19 |
WO2003100846A3 (de) | 2004-03-18 |
AU2003247287A1 (en) | 2003-12-12 |
JP2005535108A (ja) | 2005-11-17 |
WO2003100846A2 (de) | 2003-12-04 |
US8273671B2 (en) | 2012-09-25 |
JP2006513558A (ja) | 2006-04-20 |
EP1506578A2 (de) | 2005-02-16 |
AU2003247287A8 (en) | 2003-12-12 |
US20070166520A1 (en) | 2007-07-19 |
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