JP2010129700A - ダイシング・ダイボンドフィルム及び半導体装置の製造方法 - Google Patents
ダイシング・ダイボンドフィルム及び半導体装置の製造方法 Download PDFInfo
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Images
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- B32B23/04—Layered products comprising a layer of cellulosic plastic substances, i.e. substances obtained by chemical modification of cellulose, e.g. cellulose ethers, cellulose esters, viscose comprising such cellulosic plastic substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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Abstract
ダイシング時の保持力と、半導体チップの剥離性と、半導体ウェハへの低汚染性とのバランス特性に優れるダイシング・ダイボンドフィルムを提供する。
【解決手段】
ダイシング・ダイボンドフィルムは、基材上に粘着剤層を有するダイシングフィルムと、前記粘着剤層上に設けられたダイボンドフィルムとを有しており、前記ダイシングフィルムは、粘着剤層が、発泡剤を含有する熱膨張性粘着剤層と、該熱膨張性粘着剤層上の活性エネルギー線硬化型防汚性粘着剤層との積層構造を有しており、且つ前記ダイボンドフィルムは、エポキシ樹脂を含む樹脂組成物により構成されている。前記発泡剤としては熱膨張性微小球が好適である。
【選択図】 図1
Description
ダイシングフィルムは、粘着剤層が、発泡剤を含有する熱膨張性粘着剤層と、該熱膨張性粘着剤層上の活性エネルギー線硬化型防汚性粘着剤層との積層構造を有しており、
ダイボンドフィルムは、エポキシ樹脂を含む樹脂組成物により構成されていることを特徴とするダイシング・ダイボンドフィルムである。
このように、活性エネルギー線硬化型防汚性粘着剤層のベースポリマーとしてのアクリル系ポリマーBにおいて、モノマー組成物としてのアクリル酸エステルとして、CH2=CHCOOR(式中、Rは炭素数が6〜10のアルキル基である)を用いることにより、剥離力が大きくなり過ぎてピックアップ性が低下するのを防止することができる。また、ヒドロキシル基含有モノマーを10重量%〜30重量%の範囲にするとともに、ラジカル反応性炭素−炭素二重結合を有するイソシアネート化合物をヒドロキシル基含有モノマーに対して50mol%〜95mol%の範囲にし、且つ活性エネルギー線硬化後のゲル分率を90重量%以上とすることにより、ピックアップ性や低汚染性の低下を効果的に防止することができる。
(基材)
基材は活性エネルギー線透過性を有していることが重要である。基材は、ダイシング・ダイボンドフィルムの強度母体となるものである。基材としては、強度母体となる活性エネルギー線透過性を有していれば特に制限されないが、例えば、低密度ポリエチレン、直鎖状ポリエチレン、中密度ポリエチレン、高密度ポリエチレン、超低密度ポリエチレン、ランダム共重合ポリプロピレン、ブロック共重合ポリプロピレン、ホモポリプロレン、ポリブテン、ポリメチルペンテン等のポリオレフィン、エチレン−酢酸ビニル共重合体、アイオノマー樹脂、エチレン−(メタ)アクリル酸共重合体、エチレン−(メタ)アクリル酸エステル(ランダム、交互)共重合体、エチレン−ブテン共重合体、エチレン−ヘキセン共重合体、アクリル系樹脂、ポリウレタン、ポリエチレンテレフタレート、ポリエチレンナフタレート等のポリエステル、ポリカーボネート、ポリイミド、ポリエーテルエーテルケトン、ポリイミド、ポリエーテルイミド、ポリアミド、全芳香族ポリアミド、ポリフェニルスルフイド、アラミド(紙)、ガラス、ガラスクロス、フッ素樹脂、ポリ塩化ビニル、ポリ塩化ビニリデン、ABS(アクリロニトリル−ブタジエン−スチレン共重合体)、セルロース系樹脂、シリコーン樹脂、金属(箔)、紙等が挙げられる。
活性エネルギー線硬化型防汚性粘着剤層(単に「防汚層」と称する場合がある)は、粘着性を有しているとともに、活性エネルギー線硬化性を有しており、活性エネルギー線硬化型粘着剤(組成物)により形成することができる。活性エネルギー線硬化型粘着剤は、活性エネルギー線の照射により架橋度を増大させて、その粘着力を容易に低下させることができるものである。なお、本発明では、活性エネルギー線硬化型防汚性粘着剤層は、予め、ダイボンドフィルムを介して半導体ウェハを貼り付ける部分に対応する部分(図1における1bAの部分)のみを活性エネルギー線照射することにより、他の部分(ダイボンドフィルムを介して半導体ウェハを貼り付けない部分)(図1における1bBの部分)との粘着力の差を設けることもできる。
活性エネルギー線硬化型粘着剤は、ベースポリマーとしてアクリルポリマーを含んでいる活性エネルギー線硬化型粘着剤を好適に用いることができる。アクリルポリマーとしては、アクリル酸エステルを主モノマー成分として用いたものなどが挙げられる。前記アクリル酸エステルとしては、アクリル酸アルキルエステル、芳香族環を有するアクリル酸エステル(アクリル酸フェニル等のアクリル酸アリールエステルなど)、脂環式炭化水素基を有するアクリル酸エステル(アクリル酸シクロペンチル、アクリル酸シクロヘキシル等のアクリル酸シクロアルキルエステルや、アクリル酸イソボルニルなど)などが挙げられ、アクリル酸アルキルエステル、アクリル酸シクロアルキルエステルが好適であり、特にアクリル酸アルキルエステルを好適に用いることができる。アクリル酸エステルは単独で又は2種以上を組み合わせて用いることができる。
日東精機株式会社製の紫外線(UV)照射装置:商品名「UM−810」を用いて、紫外線照射積算光量:300mJ/cm2にて紫外線照射(波長:365nm)を行った活性エネルギー線硬化型防汚性粘着剤層から約0.1gをサンプリングして精秤し(試料の重量)、これをメッシュ状シートで包んだ後、約50mlの酢酸エチル中に室温で1週間浸漬させた。その後、溶剤不溶分(メッシュ状シートの内容物)を酢酸エチルから取り出し、80℃で約2時間乾燥して、該溶剤不溶分を秤量し(浸漬・乾燥後の重量)、下記式(1)よりゲル分率(重量%)を算出した。
活性エネルギー線硬化型防汚性粘着剤層への活性エネルギー線照射は、ダイシングフィルムとダイボンドフィルムとの貼合せ工程の前〜後(該貼合せ工程前、該貼合せ工程中、該貼合せ工程後)の何れの時(タイミング)であってもよく、また、ダイボンドフィルム上への半導体ウェハの貼付け工程の前〜後(該貼付け工程前、該貼付け工程中、該貼付け工程後)の何れのタイミングであってもよく、また、半導体ウェハのダイシング工程の前〜後(該ダイシング工程前、該ダイシング工程中、該ダイシング工程後)の何れのタイミングであっても良い。さらには、活性エネルギー線硬化型防汚性粘着剤層への活性エネルギー線照射は、熱膨張性粘着剤層を熱膨張させる熱膨張行程の前〜後(該熱膨張行程前、該熱膨張行程中、該熱膨張行程後)の何れのタイミングであってもよい。本発明では、ピックアップ性の観点より、熱膨張性粘着剤層を熱膨張させる前に活性エネルギー線照射させることが好ましい。すなわち、活性エネルギー線硬化型防汚性粘着剤層に紫外線等の活性エネルギー線を照射させて活性エネルギー線硬化させた後に、熱膨張性粘着剤層を加熱させて熱膨張させることが好適である。
γL=γL d+γL p (2b)
(1+cosθ)γL=2(γS dγL d)1/2+2(γS pγL p)1/2 (2c)
ただし、式(2a)〜(2c)中の各記号は、それぞれ以下の通りである。
・γS:粘着剤層(活性エネルギー線硬化型防汚性粘着剤層)の表面自由エネルギー(mJ/m2)
・γS d:粘着剤層(活性エネルギー線硬化型防汚性粘着剤層)の表面自由エネルギーにおける分散成分(mJ/m2)
・γS p:粘着剤層(活性エネルギー線硬化型防汚性粘着剤層)の表面自由エネルギーにおける極性成分(mJ/m2)
・γL:水又はヨウ化メチレンの表面自由エネルギー(mJ/m2)
・γL d:水又はヨウ化メチレンの表面自由エネルギーにおける分散成分(mJ/m2)
・γL p:水又はヨウ化メチレンの表面自由エネルギーにおける極性成分(mJ/m2)
また、活性エネルギー線硬化型防汚性粘着剤層の表面に対する水およびヨウ化メチレンの接触角の測定は、JIS Z 8703に記載されている試験場所(温度:23±2℃,湿度:50±5%RH)の環境下において、活性エネルギー線硬化型防汚性粘着剤層表面に、約1μLの水(蒸留水)またはヨウ化メチレンの液滴を滴下し、表面接触角計「CA−X」(FACE社製)を用いて、滴下30秒後に3点法より接触角を測定した。
熱膨張性粘着剤層は、ポリマー成分と、発泡剤とを含む粘着剤組成物により形成することができる。ポリマー成分(特にベースポリマー)としては、アクリル系ポリマー(「アクリルポリマーA」と称する場合がある)を好適に用いることができる。アクリルポリマーAとしては、(メタ)アクリル酸エステルを主モノマー成分として用いたものが挙げられる。前記(メタ)アクリル酸エステルとしては、例えば、(メタ)アクリル酸アルキルエステル(例えば、メチルエステル、エチルエステル、プロピルエステル、イソプロピルエステル、ブチルエステル、イソブチルエステル、sec−ブチルエステル、t−ブチルエステル、ペンチルエステル、イソペンチルエステル、ヘキシルエステル、ヘプチルエステル、オクチルエステル、2−エチルヘキシルエステル、イソオクチルエステル、ノニルエステル、デシルエステル、イソデシルエステル、ウンデシルエステル、ドデシルエステル、トリデシルエステル、テトラデシルエステル、ヘキサデシルエステル、オクタデシルエステル、エイコシルエステル等のアルキル基の炭素数1〜30、特に炭素数4〜18の直鎖状又は分岐鎖状のアルキルエステル等)及び(メタ)アクリル酸シクロアルキルエステル(例えば、シクロペンチルエステル、シクロヘキシルエステル等)などが挙げられる。これらの(メタ)アクリル酸エステルは単独で又は2種以上を併用して用いてもよい。
本発明では、基材と粘着剤層(活性エネルギー線硬化型防汚性粘着剤層と熱膨張性粘着剤層との積層体)の間に中間層が設けられていても良い。このような中間層としては、密着力の向上を目的とした下塗り剤のコーティング層などが挙げられる。また、下塗り剤のコーティング層以外の中間層としては、例えば、良好な変形性の付与を目的とした層、被着物(半導体ウェハなど)への接着面積の増大を目的とした層、接着力の向上を目的とした層、被着物(半導体ウェハなど)の表面形状に良好に追従させることを目的とした層、加熱による接着力低減の処理性の向上を目的とした層、加熱後の被着物(半導体ウエハなど)よりの剥離性の向上を目的とした層などが挙げられる。
ダイボンドフィルムは、該ダイボンドフィルム上に圧着されている半導体ウエハの加工(例えば、チップ状に切断する切断加工など)の際には、半導体ウエハに密着して支持し、半導体ウエハの加工体(例えば、チップ状に切断加工される半導体チップなど)をマウントする際には、該半導体ウエハの加工体と、各種キャリアとの接着層として作用する機能を有していることが重要である。特に、ダイボンドフィルムとしては、半導体ウエハの加工(例えば、切断加工などの加工)の際に、切断片を飛散させない接着性を有していることが重要である。
本発明のダイシング・ダイボンドフィルムの製造方法について、ダイシング・ダイボンドフィルム10を例にして説明する。先ず、基材1aは、従来公知の製膜方法により製膜することができる。当該製膜方法としては、例えばカレンダー製膜法、有機溶媒中でのキャスティング法、密閉系でのインフレーション押出法、Tダイ押出法、共押出し法、ドライラミネート法等が例示できる。
半導体ウェハ(半導体ウエハ)としては、公知乃至慣用の半導体ウェハであれば特に制限されず、各種素材の半導体ウェハから適宜選択して用いることができる。本発明では、半導体ウェハとしては、シリコンウエハを好適に用いることができる。
本発明の半導体装置の製造方法は、前記ダイシング・ダイボンドフィルムを用いた半導体装置の製造方法であれば特に制限されない。例えば、本発明のダイシング・ダイボンドフィルムを、ダイボンドフィルム上に任意に設けられたセパレータを適宜に剥離して、次の様に使用することにより、半導体装置を製造することができる。なお、以下では、図3を参照しながらダイシング・ダイボンドフィルム11を用いた場合を例にして説明する。先ず、ダイシング・ダイボンドフィルム11におけるダイボンドフィルム31上に半導体ウェハ4を圧着し、これを接着保持させて固定する(マウント工程)。本工程は、圧着ロール等の押圧手段により押圧しながら行う。
<ダイシングフィルムの作製>
冷却管、窒素導入管、温度計および撹拌装置を備えた反応容器に、アクリル酸2−エチルヘキシル(「2EHA」と称する場合がある):95部、アクリル酸−2−ヒドロキシエチル(「HEA」と称する場合がある):5部及びトルエン:65部を入れ、窒素気流中で61℃にて6時間重合処理をしてアクリル系ポリマーXを得た。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「パラクロンW−197CM」根上工業株式会社製):100部に対して、エポキシ樹脂1(商品名「エピコート1004」ジャパンエポキシレジン(JER)株式会社製):59部、エポキシ樹脂2(商品名「エピコート827」ジャパンエポキシレジン(JER)株式会社製):53部、フェノール樹脂(商品名「ミレックスXLC−4L」三井化学株式会社製):121部、球状シリカ(商品名「SO−25R」株式会社アドマテックス製):222部をメチルエチルケトンに溶解して、固形分の濃度が23.6重量%となる接着剤組成物の溶液を調製した。
<ダイボンドフィルムの作製>
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「パラクロンW−197CM」根上工業株式会社製):100部に対して、エポキシ樹脂1(商品名「エピコート1004」JER株式会社製):102部、エポキシ樹脂2(商品名「エピコート827」JER株式会社製):13部、フェノール樹脂(商品名「ミレックスXLC−4L」三井化学株式会社製):119部、球状シリカ(商品名「SO−25R」株式会社アドマテックス製):222部をメチルエチルケトンに溶解して、固形分の濃度が23.6重量%となる接着剤組成物の溶液を調製した。
各実施例3〜7については、ダイシングフィルムAを、表1に示す組成及び含有量によるダイシングフィルムに変更したこと以外は、実施例1と同様にしてダイシング・ダイボンドフィルムを作製した。
比較例1については、ダイシングフィルムAを、表1に示す組成及び含有量によるダイシングフィルムに変更したこと以外は、実施例1と同様にしてダイシング・ダイボンドフィルムを作製した。
比較例2については、実施例1にて、活性エネルギー線硬化型防汚性粘着剤層を持たないダイシングフィルムの構成とし、熱膨張性粘着剤層の表面にダイボンドフィルムを貼り合せたこと以外は、実施例1と同様にしてダイシング・ダイボンドフィルムを作製した。従って、比較例2に係るダイシング・ダイボンドフィルムは、基材/熱膨張性粘着剤層の層構成を有するダイシングフィルムと、該熱膨張性粘着剤層上に設けられたダイボンドフィルムとを有している。
BA:アクリル酸n−ブチル
AA:アクリル酸
HEA:2−ヒドロキシエチルアクリレート
MOI:2−メタクリロイルオキシエチルイソシアネート
C/L:ポリイソシアネート化合物(商品名「コロネートL」日本ポリウレタン工業株式会社製)
Irg651:商品名「イルガキュア651」チバ・スペシャルティー・ケミカルズ社製
G´(23℃):23℃におけるダイシングフィルム中の粘着剤層の弾性率
G´(150℃):150℃におけるダイシングフィルム中の粘着剤層の弾性率
E´(T0℃):T0℃におけるダイボンドフィルムの弾性率
E´(T0+20℃):T0+20℃におけるダイボンドフィルムの弾性率
(評価)
実施例1〜7及び比較例1〜2に係るダイシング・ダイボンドフィルムについて、ダイシングフィルム中の活性エネルギー線硬化型防汚性粘着剤層の表面自由エネルギー、ダイシングフィルム中の熱膨張性粘着剤層に関する弾性率、ダイボンドフィルムの弾性率、ダイシングフィルム中の活性エネルギー線硬化型防汚性粘着剤層のゲル分率、ダイシング性、ピックアップ性、汚染性を、下記の評価又は測定方法により評価又は測定した。評価又は測定結果は表1に併記した。なお、比較例2は、活性エネルギー線硬化型防汚性粘着剤層を有していないため、表面自由エネルギーとゲル分率の評価又は測定を行わない。
JIS Z 8703に記載されている試験場所(温度:23±2℃,湿度:50±5%RH)の環境下において、実施例1〜7、比較例1に係るダイシングフィルム中の粘着剤層(活性エネルギー線硬化前且つ熱膨張前の活性エネルギー線硬化型防汚性粘着剤層)の表面に、約1μLの水(蒸留水)またはヨウ化メチレンの液滴を滴下し、表面接触角計「CA−X」(FACE社製)を用いて、滴下30秒後に3点法より接触角[θ(rad)]を測定した。得られた2つの接触角と、水、ヨウ化メチレンの表面自由エネルギー値として文献より既知である値と、下記の式(2a)〜(2c)とを利用して得られる二つの式を連立一次方程式として解くことにより、ダイシングフィルム中の粘着剤層の表面自由エネルギー(γS)を算出した。
γL=γL d+γL p (2b)
(1+cosθ)γL=2(γS dγL d)1/2+2(γS pγL p)1/2 (2c)
ただし、式(2a)〜(2c)中の各記号は、それぞれ以下の通りである。
・γS:粘着剤層の表面自由エネルギー(mJ/m2)
・γS d:粘着剤層の表面自由エネルギーにおける分散成分(mJ/m2)
・γS p:粘着剤層の表面自由エネルギーにおける極性成分(mJ/m2)
・γL:水又はヨウ化メチレンの表面自由エネルギー(mJ/m2)
・γL d:水又はヨウ化メチレンの表面自由エネルギーにおける分散成分(mJ/m2)
・γL p:水又はヨウ化メチレンの表面自由エネルギーにおける極性成分(mJ/m2)
・水(蒸留水)の表面自由エネルギー値として既知である値:[分散成分(γL d):21.8(mJ/m2)、極性成分(γL p):51.0(mJ/m2)]
・ヨウ化メチレンの表面自由エネルギー値として既知である値:[分散成分(γL d):49.5(mJ/m2)、極性成分(γL p):1.3(mJ/m2)]
<ダイシングフィルムの粘着剤層の弾性率の測定方法>
ダイシングフィルム中の熱膨張性粘着剤層に関する弾性率は、発泡剤を含有していないこと以外は同様の粘着剤層(サンプル)を作製して評価又は測定を行った。弾性率の測定は、レオメトリック社製の動的粘弾性測定装置「ARES」を用いて、サンプル厚さ:約1.5mmで、φ7.9mmパラレルプレ−ト[素材:ステンレス(SUS316)]の治具を用い、剪断モードにて、周波数:1Hz、昇温速度:5℃/分、歪み:0.1%(23℃)、0.3%(150℃)にて測定し、23℃および150℃で得られた剪断貯蔵弾性率G´の値とした。
ダイボンドフィルムの弾性率は、ダイシングフィルムに積層させずに、ダイボンドフィルムを作製し、レオメトリック社製の動的粘弾性測定装置「Solid Analyzer RS A2」を用いて、引張モードにて、サンプル幅:10mm、サンプル長さ:22.5mm、サンプル厚さ:0.2mmで、周波数:1Hz、昇温速度:10℃/分、窒素雰囲気下、所定の温度(T0℃、T0+20℃)にて測定し、得られた引張貯蔵弾性率E´の値とした。
日東精機株式会社製の紫外線(UV)照射装置:商品名「UM−810」を用いて、紫外線照射積算光量:300mJ/cm2にて紫外線照射(波長:365nm)を行った活性エネルギー線硬化型防汚性粘着剤層から約0.1gをサンプリングして精秤し(試料の重量)、これをメッシュ状シートで包んだ後、約50mlの酢酸エチル中に室温で1週間浸漬させた。その後、溶剤不溶分(メッシュ状シートの内容物)を酢酸エチルから取り出し、80℃で約2時間乾燥して、該溶剤不溶分を秤量し(浸漬・乾燥後の重量)、下記式(1)よりゲル分率(重量%)を算出した。
<ダイシング性・ピックアップ性の評価方法>
実施例及び比較例のそれぞれのダイシング・ダイボンドフィルムを用いて、以下の要領で、実際に半導体ウェハのダイシングを行ってダイシング性を評価し、その後に剥離性の評価を行い、各ダイシング・ダイボンドフィルムのダイシング性能とピックアップ性能を評価とした。
研削装置:商品名「DFG−8560」ディスコ社製
半導体ウェハ:8インチ径(厚さ0.6mmから0.025mmに裏面研削)
(貼り合わせ条件)
貼り付け装置:商品名「MA−3000II」日東精機株式会社製
貼り付け速度計:10mm/min
貼り付け圧力:0.15MPa
貼り付け時のステージ温度:40℃
(ダイシング条件)
ダイシング装置:商品名「DFD−6361」ディスコ社製
ダイシングリング:「2−8−1」(ディスコ社製)
ダイシング速度:30mm/sec
ダイシングブレード:
Z1;ディスコ社製「NBC−ZH226J27HAAA」
ダイシングブレード回転数:
Z1;30,000rpm
カット方式:シングルステップカット
ウェハチップサイズ:10.0mm角
このダイシングで、ミラーウェハ(ワーク)が剥離せずにダイシング・ダイボンドフィルムにしっかりと保持され、ダイシングを良好に行うことができたどうかを確認し、ダイシングを良好に行うことができた場合を「○」とし、ダイシングを良好に行うことができなかった場合を「×」として、ダイシング性を評価した。
クリーンルーム内でダイシング・ダイボンドフィルムのセパレーターを剥離して、そのダイボンドフィルム(接着剤層)を介してシート片を4インチミラーウエハーに接着して23℃で1時間放置した後、紫外線(UV)照射装置である商品名「UM−810」(日東精機株式会社製)を用いて、紫外線照射積算光量:300mJ/cm2にて紫外線照射(波長:365nm)を行い、更に、各ダイシング・ダイボンドフィルムをT0+20℃(実施例及び比較例では140℃)のホットプレート上にダイシング・ダイボンドフィルムの基材がホットプレートの表面に接触する形態で1分間置き、ダイシングフィルムの膨張性粘着剤層に対し加熱処理を施した後、23℃にてシート片を剥離速度:12m/分、剥離角度:180度で剥離し、ミラーウエハ面における0.28μm以上のパーティクル数をテンコール社製の商品名「SFS−6200」にて数え、汚染性(低汚染性又は汚染防止性)を評価した。従って、汚染性は、数値が低いほど良好である。
1a 基材
1b 熱膨張性粘着剤層
1b 活性エネルギー線硬化型防汚性粘着剤層
2 ダイシングフィルム
3,31 ダイボンドフィルム
4 半導体ウェハ
5 半導体チップ
6 被着体
7 ボンディングワイヤー
8 封止樹脂
9 スペーサ
Claims (5)
- 基材上に粘着剤層を有するダイシングフィルムと、前記粘着剤層上に設けられたダイボンドフィルムとを有するダイシング・ダイボンドフィルムであって、
ダイシングフィルムは、粘着剤層が、発泡剤を含有する熱膨張性粘着剤層と、該熱膨張性粘着剤層上の活性エネルギー線硬化型防汚性粘着剤層との積層構造を有しており、
ダイボンドフィルムは、エポキシ樹脂を含む樹脂組成物により構成されていることを特徴とするダイシング・ダイボンドフィルム。 - 前記発泡剤が、熱膨張性微小球である請求項1記載のダイシング・ダイボンドフィルム。
- 前記ダイシングフィルムの活性エネルギー線硬化型防汚性粘着剤層が、下記のアクリル系ポリマーBを含む活性エネルギー線硬化型粘着剤により形成されており、且つ活性エネルギー線照射による硬化後のゲル分率が90重量%以上であることを特徴とする請求項1又は2記載のダイシング・ダイボンドフィルム。
アクリルポリマーB:CH2=CHCOOR(式中、Rは炭素数が6〜10のアルキル基である)で表されるアクリル酸エステル50重量%以上と、ヒドロキシル基含有モノマー10重量%〜30重量%を含み且つカルボキシル基含有モノマーを含まないモノマー組成物によるポリマーに、ラジカル反応性炭素−炭素二重結合を有するイソシアネート化合物をヒドロキシル基含有モノマーに対して50mol%〜95mol%付加反応させた構成を有するアクリル系ポリマー - 前記ダイシングフィルムの熱膨張性粘着剤層が、23℃〜150℃における弾性率が5×104Pa〜1×106Paである粘着剤層を形成可能な粘着剤と、発泡剤とを含む熱膨張性粘着剤により形成されており、前記ダイボンドフィルムの弾性率が、前記ダイシングフィルムの熱膨張性粘着剤層の発泡開始温度(T0)〜T0+20℃において1×105Pa〜1×1010Paであることを特徴とする請求項1〜3の何れか1項に記載のダイシング・ダイボンドフィルム。
- ダイシング・ダイボンドフィルムを用いた半導体装置の製造方法であって、ダイシング・ダイボンドフィルムとして、請求項1〜4の何れか1項に記載のダイシング・ダイボンドフィルムを用いたことを特徴とする半導体装置の製造方法。
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US12/625,680 US20100129986A1 (en) | 2008-11-26 | 2009-11-25 | Dicing die-bonding film and process for producing semiconductor device |
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WO2017179439A1 (ja) * | 2016-04-15 | 2017-10-19 | デンカ株式会社 | 半導体加工用粘着テープ、及びそれを用いた半導体チップ又は半導体部品の製造方法 |
KR20220117607A (ko) * | 2021-02-17 | 2022-08-24 | 하나 마이크론(주) | 반도체 장치와, 반도체 칩의 그라인딩 및 싱귤레이션 방법 |
KR102607265B1 (ko) | 2021-02-17 | 2023-11-29 | 하나 마이크론(주) | 반도체 장치와, 반도체 칩의 그라인딩 및 싱귤레이션 방법 |
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KR20100059735A (ko) | 2010-06-04 |
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