JP2010103541A - 加熱されたボンドヘッドを利用した直接ダイボンディング - Google Patents
加熱されたボンドヘッドを利用した直接ダイボンディング Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 41
- 229910000679 solder Inorganic materials 0.000 claims abstract description 31
- 230000008018 melting Effects 0.000 claims abstract description 16
- 238000002844 melting Methods 0.000 claims abstract description 16
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims description 2
- 230000007812 deficiency Effects 0.000 abstract description 2
- 230000005496 eutectics Effects 0.000 description 46
- 230000004907 flux Effects 0.000 description 10
- 229920002799 BoPET Polymers 0.000 description 8
- 239000005041 Mylar™ Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007712 rapid solidification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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Abstract
【解決手段】融点Tmを有するはんだ層を備えたダイをボンディングするための方法を提供する。ボンドヘッドをTmより高いボンドヘッド設定温度T1に加熱し、基板をTmより低い基板設定温度T2に加熱する。その後、ボンドヘッドでダイを持ち上げ、はんだ層を融解するために、温度T1に向かってダイを加熱する。ダイを前記基板にボンディングするために、ダイのはんだ層を基板上に押し付け、その後、はんだ層がT2に向かって冷却されて凝固するように、ダイをボンドヘッドから分離する。
【選択図】図2
Description
12 発熱体
14 吸引孔
16 ダイコレット
18 ダイ
20 共晶層
22 ステージ
28 アンビルブロック
30 基板
32 ボンドパッド
34 発熱体
36 熱トンネル
38 カバー
40 遮蔽ガラス
42 ボンディング部
Claims (14)
- 融点Tmを有するはんだ層を備えたダイのボンディング方法であって、
Tmより高いボンドヘッド設定温度T1にボンドヘッドを加熱する段階と、
Tmより低い基板設定温度T2に基板を加熱する段階と、
前記ボンドヘッドで前記ダイを持ち上げ、温度T1に向かって前記ダイを加熱して前記はんだ層を融解する段階と、
前記ダイの前記はんだ層を前記基板上に押し付けて前記ダイを前記基板にボンディングする段階と、
その後、前記はんだ層がT2に向かって冷却されて凝固するように、前記ダイを前記ボンドヘッドから分離する段階と、を含むことを特徴とする方法。 - 前記ボンドヘッド設定温度T1が、Tmより5〜50℃高いことを特徴とする請求項1に記載の方法。
- 前記基板設定温度T2が、Tmより5〜50℃低いことを特徴とする請求項2に記載の方法。
- 前記ダイを前記基板上に押し付ける段階の間に、前記ダイの温度が、T1とTmとの間であるT3へと低下することを特徴とする請求項1に記載の方法。
- 前記はんだ層の融点Tmが、約280℃であることを特徴とする請求項1に記載の方法。
- 前記ボンドヘッドでステージから前記ダイを持ち上げる段階の前に、
初めにはんだ層が下方に面するように接着シート上に前記ダイを搭載し、その後ピックアームで前記ダイを持ち上げて前記ステージ上に配置する段階をさらに含むことを特徴とする請求項1に記載の方法。 - 前記ピックアームによって、はんだ層が下方に面するように前記ダイが前記ステージ上に配置されることを特徴とする請求項6に記載の方法。
- 前記ボンドヘッドでピックアームから前記ダイを持ち上げる段階の前に、
初めにはんだ層が上方に面するように接着シート上に前記ダイを搭載し、その後ピックアームで前記ダイを持ち上げて、はんだ層が下方に面するように前記ピックアームで前記ダイをひっくり返す段階をさらに含むことを特徴とする請求項1に記載の方法。 - 前記基板が、熱トンネルを備えたチャンバ内に実質的に包含されていることを特徴とする請求項1に記載の方法。
- 前記はんだ層及び前記基板の酸化を防ぐために、前記熱トンネルがカバーによって覆われ、前記チャンバが遮蔽ガスで充填されていることを特徴とする請求項9に記載の方法。
- 前記はんだ層の酸化を防ぐために、加熱された前記ボンドヘッドによって保持されている場合、遮蔽ガスを前記ダイに吹き付ける段階をさらに含むことを特徴とする請求項1に記載の方法。
- 前記ダイが、既定時間の間、既定の接合力で前記基板上に押し付けられることを特徴とする請求項1に記載の方法。
- 前記はんだ層が、金‐錫物質を含むことを特徴とする請求項1に記載の方法。
- 前記ダイが、高輝度LEDチップを含むことを特徴とする請求項1に記載の方法。
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