JP2010097961A - Electrostatic chuck - Google Patents
Electrostatic chuck Download PDFInfo
- Publication number
- JP2010097961A JP2010097961A JP2007002138A JP2007002138A JP2010097961A JP 2010097961 A JP2010097961 A JP 2010097961A JP 2007002138 A JP2007002138 A JP 2007002138A JP 2007002138 A JP2007002138 A JP 2007002138A JP 2010097961 A JP2010097961 A JP 2010097961A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- electrostatic
- electrostatic adsorption
- wafer
- adsorbed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Abstract
Description
本発明は、半導体デバイスや液晶パネルの製造工程、検査工程等に使用される静電吸着機能を有する静電吸着装置に関する。 The present invention relates to an electrostatic chucking device having an electrostatic chucking function used in the manufacturing process and inspection process of semiconductor devices and liquid crystal panels.
従来、半導体デバイスの製造工程における半導体ウエハの加熱には、金属線を巻いたヒーターが使用されていた。しかし、このヒーターを使用した場合には、半導体ウエハヘの金属汚染の問題があったため、近年、セラミックス薄膜を発熱層として使用したセラミックス一体型ウエハ加熱装置の使用が提案されている（例えば、特許文献１：特開平４−１２４０７６号公報参照）。
中でも分子線エピタキシーやＣＶＤ、スパッタリング等におけるウエハの加熱方法としては、基体内からのアウトガスが無く、高純度、耐熱衝撃性に優れた熱分解窒化硼素（ＰＢＮ）と熱分解黒鉛（ＰＧ）の複合セラミックヒーターを用いることが有効とされており（特許文献２：特開昭６３−２４１９２１号公報参照）、このようなヒーターであると従来のタンタルワイヤーヒーターに比べて装着が容易で、熱変形、断線、ショート等のトラブルを起さないので使い易く、しかも面上ヒーターであるため比較的均熱が得られ易いという利点もある。
この半導体ウエハの加熱にあたっては、ヒーター上に半導体ウエハを固定するために減圧雰囲気では静電吸着装置が使用されており、プロセスの高温化に伴ってその材質は樹脂からセラミックスに移行している（特許文献３，４：特開昭５２−６７３５３号公報、特開昭５９−１２４１４０号公報参照）。
Conventionally, a heater wound with a metal wire has been used for heating a semiconductor wafer in a semiconductor device manufacturing process. However, when this heater is used, there is a problem of metal contamination on the semiconductor wafer, and in recent years, use of a ceramic integrated wafer heating apparatus using a ceramic thin film as a heat generating layer has been proposed (for example, Patent Documents). 1: Refer to Japanese Patent Laid-Open No. 4-124076).
Above all, as a method for heating a wafer in molecular beam epitaxy, CVD, sputtering, etc., there is no outgas from the inside of the substrate, and it is a composite of pyrolytic boron nitride (PBN) and pyrolytic graphite (PG) that has high purity and excellent thermal shock resistance. It is effective to use a ceramic heater (see Patent Document 2: Japanese Patent Laid-Open No. 63-241922). Such a heater is easier to install than conventional tantalum wire heaters, There is also an advantage that it is easy to use because troubles such as disconnection and short-circuit do not occur, and that it is relatively easy to obtain uniform heat because it is a surface heater.
In heating the semiconductor wafer, an electrostatic adsorption device is used in a reduced-pressure atmosphere to fix the semiconductor wafer on the heater, and the material is changed from resin to ceramics as the temperature of the process increases ( Patent Documents 3 and 4: Refer to Japanese Patent Laid-Open Nos. 52-67353 and 59-124140.
また最近では、これらのセラミックス一体型ウエハ加熱装置と静電吸着装置を合体した静電吸着装置が提案されており、例えば、静電吸着装置の絶縁層にアルミナを用いたもの（非特許文献１：ニューセラミックス（７）、ｐ４９〜５３、１９９４参照）、更にクリーニングガスの耐性を上げるために窒化アルミニウムを絶縁層に用いたものも開発されてきている。
この静電吸着装置において、上記非特許文献１に記載されているように、静電吸着力はこの絶縁層の体積抵抗率が低くなれば強くなるが、低過ぎるとリーク電流によるデバイスの破損が生じるため、静電吸着装置の絶縁層の体積抵抗値は１０8〜１０18Ωｃｍ、好ましくは１０9〜１０13Ωｃｍであることが望ましい。
Recently, an electrostatic chucking device in which these ceramic integrated wafer heating device and electrostatic chucking device are combined has been proposed. For example, an insulating layer of an electrostatic chucking device uses alumina (Non-patent Document 1). : See New Ceramics (7), p. 49-53, 1994), and those using aluminum nitride as an insulating layer have also been developed to increase the resistance of the cleaning gas.
In this electrostatic adsorption apparatus, as described in Non-Patent Document 1, the electrostatic adsorption force increases as the volume resistivity of the insulating layer decreases, but if it is too low, damage to the device due to leakage current occurs. Therefore, it is desirable that the volume resistance value of the insulating layer of the electrostatic adsorption device is 10 8 to 10 18 Ωcm, preferably 10 9 to 10 13 Ωcm.
静電吸着装置の電圧が印加される電極の形状によって静電チャックは３種類に分類される。単一の内部電極をもつ単極型では被吸着物を接地する必要があり、それに対して一対の内部電極をもつ双極型や、一対の電極が櫛形に形成されている櫛形電極型では２つの電極各々に正負の電圧が印加されることから被吸着物であるウエハを接地する必要がなく、半導体用では後者のタイプが多く使われている。 The electrostatic chuck is classified into three types according to the shape of the electrode to which the voltage of the electrostatic adsorption device is applied. In the unipolar type having a single internal electrode, the object to be adsorbed must be grounded. On the other hand, in the bipolar type having a pair of internal electrodes and the comb electrode type having a pair of electrodes formed in a comb shape, Since positive and negative voltages are applied to each of the electrodes, it is not necessary to ground the wafer as an object to be adsorbed, and the latter type is often used for semiconductors.
近年、分子線エピタキシーやＣＶＤ、スパッタリング装置でセラミックス製の静電吸着装置が搭載されるようになってきたが、半導体デバイスの製造工程のなかには５００℃を超えるような高温での使用要求も増えてきている。シリコンウエハ等の被吸着物が静電吸着装置に吸着されると、加熱されて熱膨張する。その際に被吸着物吸着面と静電吸着装置載置面が強く擦れるという現象が起きる。 In recent years, electrostatic adsorption devices made of ceramics have been mounted in molecular beam epitaxy, CVD, and sputtering devices, but the demand for use at high temperatures exceeding 500 ° C. has increased in the manufacturing process of semiconductor devices. ing. When an object to be adsorbed such as a silicon wafer is adsorbed by the electrostatic attraction apparatus, it is heated and thermally expanded. At that time, a phenomenon occurs in which the attracted object attracting surface and the electrostatic attracting device mounting surface are rubbed strongly.
シリコンウエハのビッカース硬度Ｈｖはおよそ１１００程度であるのに対し、セラミックス絶縁体層の材質となるアルミナ、窒化アルミニウムのビッカース硬度Ｈｖは、それぞれ１５００、１４００である。このようなシリコンウエハよりも硬いアルミナ、窒化アルミニウムなどを絶縁体層に用いた静電吸着装置では、シリコンウエハを加熱・冷却する際にウエハ表面が絶縁体層によって削られてしまい、パーティクルを発生させ、更にウエハ吸着面にキズを発生させるという問題がある。 The Vickers hardness Hv of the silicon wafer is about 1100, whereas the Vickers hardness Hv of alumina and aluminum nitride used as the material of the ceramic insulator layer is 1500 and 1400, respectively. In an electrostatic chuck using alumina, aluminum nitride, etc., harder than a silicon wafer, as the insulator layer, the surface of the wafer is scraped by the insulator layer when the silicon wafer is heated or cooled, generating particles. Furthermore, there is a problem that scratches are generated on the wafer suction surface.
そこで、高温域で吸着しても被吸着物の吸着面にキズがつきにくい静電吸着装置が望まれていた。この課題を解決すべく、表面粗さがＲａ≦０．０５μｍ、Ｒｍａｘ≦０．６μｍであり、かつ前記絶縁体層の表面のビッカース硬度Ｈｖが１０００以下であることを特徴とする静電吸着機能を有する加熱装置が開発された（特許文献５：特開２００５−７２０６６号公報）。
しかし、被吸着物の吸着面にキズがつきにくくなったが、表面粗さがＲａ≦０．０５μｍと平滑なために密着性が向上し、パーティクル数が逆に増えてしまうという問題が発生した。
Therefore, there has been a demand for an electrostatic adsorption device that is difficult to damage the adsorption surface of an object to be adsorbed even if it is adsorbed in a high temperature range. In order to solve this problem, the surface roughness is Ra ≦ 0.05 μm, Rmax ≦ 0.6 μm, and the surface of the insulator layer has a Vickers hardness Hv of 1000 or less. Has been developed (Patent Document 5: Japanese Patent Laid-Open No. 2005-72066).
However, the adsorption surface of the object to be adsorbed became hard to be scratched, but the surface roughness was smooth as Ra ≦ 0.05 μm, so that the adhesion was improved and the number of particles was increased. .
本発明は、上記事情に鑑みなされたもので、半導体ウエハやガラス基板等を静電吸着する際に、被加熱物の吸着面側にキズがつくことを防止し、また、発塵を抑え、耐摩耗性に優れた長寿命の静電吸着装置を提供することを目的とする。 The present invention has been made in view of the above circumstances, and when electrostatically adsorbing a semiconductor wafer, a glass substrate or the like, it prevents the adsorption surface side of the heated object from being scratched, and suppresses dust generation, It is an object of the present invention to provide a long-life electrostatic adsorption device having excellent wear resistance.
本発明者らは、上記目的を達成するため鋭意検討を行った結果、半導体ウエハやガラス基板等の被吸着物を吸着するための静電吸着装置において、静電吸着用電極を覆うように形成され、被吸着物を吸着する絶縁層の動摩擦係数を０．３以下とし、表面に微小凹みを設けることにより、シリコンウエハ等の被吸着物を静電吸着装置載置面に静電吸着させて加熱・冷却を行う際に、ウエハ吸着面が静電吸着装置載置面の絶縁層と被吸着物との熱膨張による摩擦によりパーティクルが発生しにくいことを知見した。また、微小凹みを含む表面粗さＲａを０．０５μｍ以上０．３０μｍ以下とし、加えて被吸着物と接する最表面部分の表面粗さＲａを０．０４μｍ以下とすることにより、格段にパーティクルの発生を抑えることができること、更に、ビッカース硬度Ｈｖを５０以上１０００以下とすることにより、シリコンウエハ等の被吸着物を静電吸着装置載置面に静電吸着させて加熱・冷却を行う際に、ウエハ吸着面が静電吸着装置載置面の絶縁層と被吸着物との熱膨張による摩擦によりキズが発生するという問題を回避し得ることを知見し、本発明を完成させた。 As a result of intensive studies to achieve the above object, the inventors of the present invention have formed an electrostatic adsorption device for adsorbing an object to be adsorbed such as a semiconductor wafer or a glass substrate so as to cover the electrode for electrostatic adsorption. The dynamic friction coefficient of the insulating layer that adsorbs the object to be adsorbed is 0.3 or less, and the surface is provided with a micro-dent so that the object to be adsorbed such as a silicon wafer is electrostatically adsorbed to the surface of the electrostatic adsorption device. When heating / cooling, it was found that the wafer attracting surface hardly generates particles due to friction caused by thermal expansion between the insulating layer of the electrostatic attracting device mounting surface and the object to be attracted. In addition, by making the surface roughness Ra including minute dents 0.05 μm or more and 0.30 μm or less, and further by setting the surface roughness Ra of the outermost surface portion in contact with the object to be adsorbed to 0.04 μm or less, When heating and cooling are performed by electrostatically adsorbing an object to be adsorbed, such as a silicon wafer, on the surface of the electrostatic adsorption device by setting the Vickers hardness Hv to 50 or more and 1000 or less. The inventors have found that the wafer attracting surface can avoid the problem of scratches due to friction caused by thermal expansion between the insulating layer on the electrostatic attracting device mounting surface and the object to be attracted, thereby completing the present invention.
即ち、本発明によれば、半導体ウエハ、ガラス基板等の被吸着物を吸着するための静電吸着装置において、支持基板の一面に形成された静電吸着用電極を覆って上記被吸着物を吸着する吸着面をなす絶縁層が形成され、該絶縁層は、動摩擦係数が０．３以下であり、更に、絶縁層の表面に多数の微小凹みが形成されていることを特徴とする静電吸着装置が提供される（請求項１）。
また、前記静電吸着装置の微小凹みを含む表面の表面粗さＲａが０．０５μｍ以上０．３０μｍ以下であり、かつ被吸着物と接する最表面部分の表面粗さＲａが０．０４μｍ以下であることを特徴とする静電吸着装置が提供される（請求項２）。
That is, according to the present invention, in an electrostatic adsorption device for adsorbing an object to be adsorbed such as a semiconductor wafer or a glass substrate, the object to be adsorbed is covered with an electrode for electrostatic adsorption formed on one surface of a support substrate. An insulating layer forming an adsorbing surface to be adsorbed is formed, the insulating layer has a dynamic friction coefficient of 0.3 or less, and a number of minute dents are formed on the surface of the insulating layer. An adsorption device is provided (claim 1).
Further, the surface roughness Ra of the surface including the micro dent of the electrostatic adsorption device is 0.05 μm or more and 0.30 μm or less, and the surface roughness Ra of the outermost surface portion in contact with the object to be adsorbed is 0.04 μm or less. There is provided an electrostatic adsorption device characterized in that (claim 2).
このものは絶縁層表面に微小凹みを有し、動摩擦係数を０．３以下とすることで被吸着物がキズつけられずにパーティクルの発生が大幅に低減した。更に、微小凹みを含む表面粗さＲａを０．０５μｍ以上０．３０μｍ以下とすることにより、絶縁膜と被吸着物との密着性が改善されてパーティクルの発生が大幅に低減した。 This material has minute dents on the surface of the insulating layer, and by making the coefficient of dynamic friction 0.3 or less, the adsorbed material was not scratched and the generation of particles was greatly reduced. Furthermore, by setting the surface roughness Ra including the minute dents to 0.05 μm or more and 0.30 μm or less, the adhesion between the insulating film and the object to be adsorbed is improved, and the generation of particles is greatly reduced.
更に、上記絶縁膜で被吸着物と接する最表面部分を凹みを含まない表面粗さＲａを０．０４μｍ以下とすることにより、格段にパーティクルの発生を抑制することができた。 Further, the generation of particles can be remarkably suppressed by setting the surface roughness Ra, which does not include a dent, in the outermost surface portion in contact with the object to be adsorbed by the insulating film to 0.04 μm or less.
絶縁層表面の凹みを含む表面粗さＲａが０．０５μｍ未満の場合は、被吸着物と接する面積が多く、密着性が増してパーティクル数が増加してしまう。また、０．３０μｍを超えると、粗くなりすぎて逆にパーティクルが発生し易くなる。 When the surface roughness Ra including the depression on the surface of the insulating layer is less than 0.05 μm, the area in contact with the object to be adsorbed is large, the adhesion is increased, and the number of particles is increased. On the other hand, if it exceeds 0.30 μm, it becomes too coarse and particles are likely to be generated.
また、被吸着物と接する最表面部分の平滑さもパーティクル数の増減に影響を及ぼし、最表面部分の表面粗さＲａを０．０４μｍ以下とすることにより、パーティクルの発生を抑えることができる。粗くなりすぎると逆にパーティクルが発生し易くなる。 In addition, the smoothness of the outermost surface portion in contact with the object to be adsorbed also affects the increase or decrease of the number of particles, and the generation of particles can be suppressed by setting the surface roughness Ra of the outermost surface portion to 0.04 μm or less. On the other hand, if it becomes too coarse, particles are likely to be generated.
本発明の静電吸着装置は、絶縁層のビッカース硬度Ｈｖが５０以上１０００以下であることが好ましい（請求項３）。 In the electrostatic adsorption device of the present invention, the insulating layer preferably has a Vickers hardness Hv of 50 or more and 1000 or less (claim 3).
前記絶縁層のビッカース硬度Ｈｖが１０００を超えると、静電吸着装置の載置面にはキズはつかないが、被吸着物の吸着面にキズが多発し、これが発塵源となり半導体デバイス不良が多発してしまうおそれが生じる。最悪の場合、デバイスが後工程にて熱処理される際に、熱応力を受けてキズを起点にしてウエハが割れてしまい、製造ラインを止めてしまうような大損害を与えるおそれがある。 When the Vickers hardness Hv of the insulating layer exceeds 1000, the mounting surface of the electrostatic chuck is not scratched, but scratches occur frequently on the chucking surface of the object to be adsorbed, which becomes a dust source and causes a semiconductor device failure. There is a risk of frequent occurrence. In the worst case, when the device is heat-treated in a subsequent process, the wafer is cracked starting from scratches due to thermal stress, and there is a risk of causing great damage such as stopping the production line.
前記絶縁層のビッカース硬度Ｈｖが５０未満の場合は、被吸着物の吸着面にはキズはつかないが、逆に、静電吸着装置側の吸着面にキズが多くついてしまい、ついには絶縁層が絶縁破壊を起こしてしまい、静電吸着装置が破壊してしまうおそれがある。また、静電吸着装置側の吸着面の擦れにより消耗が激しく、短寿命になってしまうおそれがある。更に擦れる際に発生するパーティクルによって半導体デバイス、又は液晶パネルの不良が多発するという問題が発生し易くなる。 When the Vickers hardness Hv of the insulating layer is less than 50, the attracting surface of the object to be adsorbed is not scratched, but conversely, the attracting surface on the electrostatic attracting device side is often scratched, and finally the insulating layer May cause dielectric breakdown and the electrostatic chuck may be destroyed. In addition, the wear on the suction surface on the electrostatic suction device side is extremely consumed, and there is a possibility that the service life may be shortened. Furthermore, the problem of frequent failures of the semiconductor device or the liquid crystal panel due to particles generated when rubbing easily occurs.
この静電吸着装置の絶縁層を熱分解窒化硼素とすることで、耐電圧性に優れ、絶縁層を薄くでき、強い吸着力が得られ、また、ビッカース硬度も１００程度なので、ウエハに対し擦れによるキズをつけないという優位性が与えられる（請求項４）。 By using pyrolytic boron nitride as the insulating layer of this electrostatic adsorption device, it has excellent voltage resistance, the insulating layer can be made thin, a strong adsorption force is obtained, and the Vickers hardness is about 100, so it rubs against the wafer. The advantage of not scratching due to is given (claim 4).
また、更に上記絶縁層の熱分解窒化硼素に炭素、珪素、アルミニウム、イットリウム、チタンのうち少なくとも１種類の元素を０．０１〜２０質量％含ませることにより硬さを調整できる。０．０１質量％未満であるとビッカース硬度Ｈｖは５０未満となってしまい、２０質量％を超えるとビッカース硬度Ｈｖは１０００を超えてしまう（請求項５）。 Further, the hardness can be adjusted by adding 0.01 to 20% by mass of at least one element of carbon, silicon, aluminum, yttrium and titanium to the pyrolytic boron nitride of the insulating layer. If it is less than 0.01% by mass, the Vickers hardness Hv becomes less than 50, and if it exceeds 20% by mass, the Vickers hardness Hv exceeds 1000 (Claim 5).
この静電吸着装置は、加熱ヒーターを埋設することにより、６００℃を超える温度までウエハを加熱できるので、半導体デバイス製造における高温プロセスに対応可能となる（請求項６）。 Since this electrostatic adsorption device can heat a wafer to a temperature exceeding 600 ° C. by embedding a heater, it can cope with a high temperature process in semiconductor device manufacturing.
なお、本発明の静電吸着装置の絶縁層は、化学気相蒸着法で形成するのがよい。このように、絶縁層を化学気相蒸着法で形成すれば、高純度、緻密質で、寸法精度に優れたものを作ることができ、耐熱性、化学的安定性に優れ、絶縁不良や剥離が極めて少なく、低発塵の静電吸着装置とすることができる。 Note that the insulating layer of the electrostatic adsorption device of the present invention is preferably formed by chemical vapor deposition. In this way, if the insulating layer is formed by chemical vapor deposition, it is possible to produce a high-purity, dense material with excellent dimensional accuracy, excellent heat resistance and chemical stability, poor insulation and peeling. Therefore, the electrostatic adsorption device can generate a low dust generation.
本発明によれば、ウエハ吸着面又は静電吸着装置載置面にキズがつくことを防止し、また、発塵を抑え、耐摩耗性に優れた長寿命の静電吸着装置を提供することができる。 According to the present invention, it is possible to provide a long-life electrostatic adsorption device that prevents the wafer adsorption surface or the electrostatic adsorption device mounting surface from being scratched, suppresses dust generation, and has excellent wear resistance. Can do.
本発明の静電吸着装置は、半導体ウエハやガラス基板等の被吸着物を吸着する吸着面を特定の絶縁層にて形成するものである。この場合、静電吸着装置としては、一例として、図１に示したような本発明の静電吸着機能を有するウエハの加熱装置を挙げることができるが、これに限定されるものではない。 The electrostatic adsorption device of the present invention forms an adsorption surface for adsorbing an object to be adsorbed, such as a semiconductor wafer or a glass substrate, with a specific insulating layer. In this case, as an example of the electrostatic adsorption apparatus, the wafer heating apparatus having the electrostatic adsorption function of the present invention as shown in FIG. 1 can be cited, but the electrostatic adsorption apparatus is not limited to this.
図１の静電吸着装置について更に詳述すると、１はこの静電吸着装置の静電吸着機能を有する加熱装置支持基材、２は支持基板、３ａ，３ｂは双極型静電吸着用電極、４は発熱層、５は絶縁層を示す。 1 will be described in more detail. 1 is a heating device supporting base material having an electrostatic adsorption function of the electrostatic adsorption device, 2 is a support substrate, 3a and 3b are bipolar electrostatic adsorption electrodes, Reference numeral 4 denotes a heat generating layer, and 5 denotes an insulating layer.
かかる静電吸着装置は、例えば、窒化硼素と窒化アルミニウムの混合焼結体からなる支持基板、該基板の一方の面に接合された熱分解グラファイトからなる発熱層、その上に設けられた熱分解窒化硼素からなる絶縁層、該基板の他方の面に接合された熱分解グラファイトからなる静電吸着用電極、その上に設けられた炭素、珪素、アルミニウム、イットリウム、チタンのいずれか１種類以上の元素を含んだ熱分解窒化硼素からなる絶縁層から構成されたものとされる。 Such an electrostatic adsorption device includes, for example, a support substrate made of a mixed sintered body of boron nitride and aluminum nitride, a heat generating layer made of pyrolytic graphite bonded to one surface of the substrate, and a pyrolysis provided thereon. An insulating layer made of boron nitride, an electrode for electrostatic adsorption made of pyrolytic graphite bonded to the other surface of the substrate, and one or more of carbon, silicon, aluminum, yttrium, and titanium provided thereon The insulating layer is made of pyrolytic boron nitride containing elements.
支持基板は、耐熱性があって絶縁性があればよく、例えば、窒化硼素と窒化アルミニウムの混合物を公知の方法で焼結させて得たものとすればよい。例えば、窒化硼素と窒化アルミニウムの混合割合は、窒化アルミニウムが多すぎると線膨張係数が大きすぎるという問題があり、少なすぎると線膨張係数が小さすぎる問題があるので、質量比で１：０．０５〜１の範囲とすればよい（特開平８−２２７９３３号公報）。また、特許第３６４７０６４号公報のようなカーボンの周りに熱分解窒化硼素、酸化珪素、窒化アルミニウム、アルミナ及び窒化珪素から選択された材料を含む絶縁層が接合されたものでもよい。 The support substrate only needs to have heat resistance and insulation properties. For example, the support substrate may be obtained by sintering a mixture of boron nitride and aluminum nitride by a known method. For example, when the mixing ratio of boron nitride and aluminum nitride is too much aluminum nitride, there is a problem that the linear expansion coefficient is too large, and when it is too small, there is a problem that the linear expansion coefficient is too small. It may be in the range of 05 to 1 (Japanese Patent Laid-Open No. 8-227933). Further, an insulating layer containing a material selected from pyrolytic boron nitride, silicon oxide, aluminum nitride, alumina, and silicon nitride may be bonded around carbon as in Japanese Patent No. 3647064.
発熱層及び静電吸着用電極の熱分解グラファイトは、例えばメタンガスを２２００℃、５Ｔｏｒｒという条件下で熱分解することによって得られたものとすればよい。厚さは薄すぎると強度不足の問題があり、厚すぎると剥離の問題があるので、１０〜３００μｍとすればよい。 The pyrolytic graphite of the heat generating layer and the electrostatic adsorption electrode may be obtained by pyrolyzing methane gas under conditions of 2200 ° C. and 5 Torr, for example. If the thickness is too thin, there is a problem of insufficient strength, and if it is too thick, there is a problem of peeling, so it may be 10 to 300 μm.
本発明において、絶縁層は、動摩擦係数が０．３以下、好ましくは０．０１〜０．０２５、更に好ましくは０．０１〜０．０２であり、表面に多数の微小凹みを有するように形成される。この場合、このような微小凹みは、絶縁層をサンドブラスト処理することにより形成することができ、またサンドブラスト処理後、必要により形成されたサンドブラスト面の微小凹みをなくさないようにラッピング研摩することにより、上記動摩擦係数を有する絶縁層を形成することができる。また、サンドブラスト処理に用いる砥粒の種類、粒度、サンドブラスト処理条件等を選定し、更にはラッピング研摩条件等を選定することにより、微小凹みを含む表面粗さＲａを０．０５〜０．３０μｍ、より好ましくは０．０５〜０．２５μｍ、更には０．０５〜０．２０μｍに形成することが好ましい。
また、サンドブラストの代わりに固定砥粒と遊離砥粒で表面を研摩することでも同様な微小凹みを形成することができる。
In the present invention, the insulating layer has a dynamic friction coefficient of 0.3 or less, preferably 0.01 to 0.025, more preferably 0.01 to 0.02, and is formed so as to have a large number of micro-dents on the surface. Is done. In this case, such a micro dent can be formed by sand blasting the insulating layer, and after the sand blasting, lapping polishing is performed so as not to eliminate the micro dent on the sand blast surface formed as necessary. An insulating layer having the above dynamic friction coefficient can be formed. In addition, by selecting the type of abrasive grains used for the sandblasting treatment, the particle size, the sandblasting treatment conditions, and the like, and further by selecting the lapping polishing conditions etc., the surface roughness Ra including the micro dents is 0.05 to 0.30 μm, More preferably, it is 0.05 to 0.25 μm, and more preferably 0.05 to 0.20 μm.
Also, the same micro-dent can be formed by polishing the surface with fixed abrasive grains and loose abrasive grains instead of sand blasting.
更に、かかるラッピング研摩により、被吸着物と接する最表面部分の表面粗さＲａを０．０４μｍ以下、より好ましくは０．００５〜０．０４μｍ、更には０．０１〜０．０４μｍとすることが好ましい。なお、図２は、絶縁層全体の表面粗さ（Ｒａ）１と、被吸着物（ウエハ）と接する最表面部分の表面粗さ（Ｒａ）２を示す説明図である。 Furthermore, by such lapping polishing, the surface roughness Ra of the outermost surface portion in contact with the object to be adsorbed is set to 0.04 μm or less, more preferably 0.005 to 0.04 μm, and further 0.01 to 0.04 μm. preferable. FIG. 2 is an explanatory diagram showing the surface roughness (Ra) 1 of the entire insulating layer and the surface roughness (Ra) 2 of the outermost surface portion in contact with the object to be adsorbed (wafer).
本発明の絶縁層は、ビッカース硬度Ｈｖが５０〜１０００、より好ましくは５０〜８００、更には５０〜５００であることが好ましい。この場合、珪素のビッカース硬度Ｈｖが１１００であり、このため絶縁層を珪素より柔らかいビッカース硬度Ｈｖ１０００以下の熱分解窒化硼素、あるいは炭素、珪素、アルミニウム、イットリウム、チタンのいずれか１種類以上の元素を０．０１〜２０質量％含んだ熱分解窒化硼素にて形成することが好ましいものであるが、これは静電吸着用電極の上に化学気相蒸着法で形成すればよく、これによればこの絶縁層の厚さを容易に調整することができる。この絶縁層の厚さは薄すぎると強度不足の問題があり、厚すぎると静電吸着力の低下の問題があるので、２０〜３００μｍとすることが好ましい。 The insulating layer of the present invention preferably has a Vickers hardness Hv of 50 to 1000, more preferably 50 to 800, and even more preferably 50 to 500. In this case, the Vickers hardness Hv of silicon is 1100. Therefore, the insulating layer is made of pyrolytic boron nitride having a Vickers hardness Hv of 1000 or less, which is softer than silicon, or one or more elements of carbon, silicon, aluminum, yttrium, and titanium. It is preferable to form by pyrolytic boron nitride containing 0.01 to 20% by mass, but this may be formed by chemical vapor deposition on the electrode for electrostatic adsorption. The thickness of this insulating layer can be easily adjusted. If the thickness of this insulating layer is too thin, there is a problem of insufficient strength, and if it is too thick, there is a problem of a decrease in electrostatic attraction force.
例えば、炭素と珪素を含む熱分解窒化硼素絶縁層は、例えば基材を真空中にセットして例えば２，０００℃に加熱し、三塩化硼素とアンモニアとメタンと四塩化珪素を容量比８：１：１：１の混合気体として導入し、５Ｔｏｒｒという条件下で熱分解することによって得られる。厚さは薄すぎると絶縁破壊の問題があり、厚すぎると静電吸着力の低下の問題があるので、５０〜３００μｍとすればよい。 For example, in the pyrolytic boron nitride insulating layer containing carbon and silicon, for example, the base material is set in a vacuum and heated to, for example, 2,000 ° C., and boron trichloride, ammonia, methane, and silicon tetrachloride are in a capacity ratio of 8: It is obtained by introducing as a 1: 1: 1 gas mixture and thermally decomposing under the condition of 5 Torr. If the thickness is too thin, there is a problem of dielectric breakdown, and if it is too thick, there is a problem of reduction in electrostatic attraction force, so it may be 50 to 300 μm.
以下、実施例及び比較例を示して本発明を具体的に説明するが、本発明はこれらに限定されるものではない。
なお、本発明で摩擦摩耗試験は新東科学（株）の加重変動型摩擦摩耗試験機ＨＨＳ２０００、表面粗さ測定はキーエンス超深度形状測定顕微鏡ＶＫ−８５５０、ビッカース硬度Ｈｖ測定機は明石製作所ＨＶ−１１４を使用した。
動摩擦係数測定で用いた圧子はアルミナ鏡面体で、摺動速度は２ｍｍ／ｓｅｃ、加重は１８０〜２００ｇとして測定を行い、その平均の値を本発明での動摩擦係数とした。
EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated concretely, this invention is not limited to these.
In the present invention, the friction wear test is a weighted variable friction wear tester HHS2000 from Shinto Kagaku Co., Ltd., the surface roughness measurement is a Keyence ultra-deep shape measurement microscope VK-8550, and the Vickers hardness Hv measurement machine is an Akashi Seisakusho HV- 114 was used.
The indenter used in the measurement of the dynamic friction coefficient was an alumina mirror body, the sliding speed was 2 mm / sec, the load was 180 to 200 g, and the average value was used as the dynamic friction coefficient in the present invention.
［実施例１、比較例１］
直径２００ｍｍ、厚さ１０ｍｍのカーボン基材の全面をアンモニアと三塩化硼素を混合比（容量比）８：１で２，０００℃にて反応させて熱分解窒化硼素を堆積させて、０．５ｍｍ厚でコーティングした円板状支持基材を作製した。
次いで、この上でメタンガスを２，２００℃、５Ｔｏｒｒの条件下で熱分解して、この円板状支持基材上に厚さ１００μｍの熱分解グラファイト層を形成し、表面の熱分解グラファイト層より電極パターンを、また裏面の熱分解グラファイト層よりヒーターパターンを加工して、それぞれ静電吸着用電極と発熱層とした。
更に、この両面にアンモニアと三塩化硼素の混合比（容量比）を１：１として圧力５Ｔｏｒｒで反応させて、反応温度を１，９００℃として、厚さ２００μｍの熱分解窒化硼素絶縁層を設け、静電吸着装置を作製した。この条件で作製された膜のビッカース硬度Ｈｖは１００であった。その表面にサンドブラストにて微小凹みを設けて、更に微小凹みを残しながらウエハと接する最表面をラッピング研摩して、微小凹みを含む表面を有する動摩擦係数が０．０５〜０．５、凹みを含む表面の表面粗さＲａが０．０１〜０．５０μｍ、更にウエハと接する最表面の表面粗さＲａが０．０１〜０．１μｍである特性を有する種々の静電吸着装置と、一方、比較として全く微小凹みの無い表面仕上げをした動摩擦係数が０．１で、表面粗さＲａが０．０１μｍの静電吸着装置を作製した。
[Example 1, Comparative Example 1]
The entire surface of a carbon substrate having a diameter of 200 mm and a thickness of 10 mm was reacted with ammonia and boron trichloride at a mixing ratio (volume ratio) of 8: 1 at 2,000 ° C. to deposit pyrolytic boron nitride, and 0.5 mm A disc-shaped support substrate coated with a thickness was prepared.
Next, methane gas is pyrolyzed on this at 2200 ° C. and 5 Torr to form a pyrolytic graphite layer having a thickness of 100 μm on the disk-shaped support base. From the pyrolytic graphite layer on the surface, The electrode pattern and the heater pattern were processed from the pyrolytic graphite layer on the back side to form an electrostatic adsorption electrode and a heating layer, respectively.
Furthermore, a pyrolytic boron nitride insulating layer having a thickness of 200 μm is provided on both surfaces by reacting at a pressure of 5 Torr with a mixing ratio (capacity ratio) of ammonia and boron trichloride of 1: 1 and a reaction temperature of 1,900 ° C. An electrostatic adsorption device was produced. The film prepared under these conditions had a Vickers hardness Hv of 100. A fine dent is provided on the surface by sand blasting, and the outermost surface in contact with the wafer is lapped and polished while leaving the fine dent, and the dynamic friction coefficient having the surface including the fine dent is 0.05 to 0.5, including the dent. On the other hand, various electrostatic adsorption devices having the characteristics that the surface roughness Ra of the surface is 0.01 to 0.50 μm and the surface roughness Ra of the outermost surface in contact with the wafer is 0.01 to 0.1 μm. As a result, an electrostatic adsorption device having a surface finish with no micro-dents and a dynamic friction coefficient of 0.1 and a surface roughness Ra of 0.01 μm was produced.
このように作製した静電吸着装置を６００℃まで加熱して、そこにウエハを搬送して静電吸着装置の上に載せ、載せてから１０秒後に静電吸着用電極に±３００Ｖの電圧を印加してウエハを静電吸着してウエハを加熱した。３分後に印加電圧をＯＦＦにし、リフトピンを上げることによってウエハを脱離させた。十分に冷却した後に、そのウエハの吸着面のキズ、付着したパーティクルの数をウエハ欠陥検査レビュー装置ＭＡＧＩＣＳ Ｍ３５０にて測定した。
その結果、表面に微小凹みを有し、動摩擦係数が０．３以下、微小凹みを含む表面の表面粗さＲａが０．０５〜０．３０μｍのものは、ウエハ吸着面及び静電吸着装置の載置面にはキズ、凹みは肉眼ではほとんど確認されず、０．２μｍ以上のパーティクル総数はいずれも８インチウエハあたり１０，０００個以下と良好であった。動摩擦係数が０．３を超え、微小凹みを含む表面の表面粗さＲａが０．０５〜０．３０μｍのものは、静電吸着装置の載置面にキズが確認され、０．２μｍ以上のパーティクル総数はいずれも８インチウエハあたり２０，０００個と増加してしまった。
一方、表面に凹みを無くして仕上げたものでは、静電吸着装置の載置面にはキズが確認され、パーティクル総数も５０，０００個と更に増加してしまった。
The electrostatic chuck produced in this way is heated to 600 ° C., a wafer is transferred to the electrostatic chuck and placed on the electrostatic chuck, and a voltage of ± 300 V is applied to the electrostatic chucking electrode 10 seconds after the wafer is placed. The wafer was heated by applying electrostatic force to the wafer. After 3 minutes, the applied voltage was turned off, and the wafer was detached by raising the lift pins. After sufficiently cooling, the scratch on the suction surface of the wafer and the number of adhering particles were measured with a wafer defect inspection / review apparatus MAGICS M350.
As a result, when the surface has a micro dent, the coefficient of dynamic friction is 0.3 or less, and the surface roughness Ra of the surface including the micro dent is 0.05 to 0.30 μm, Scratches and dents were hardly confirmed on the mounting surface with the naked eye, and the total number of particles having a size of 0.2 μm or more was as good as 10,000 or less per 8 inch wafer. When the coefficient of dynamic friction exceeds 0.3 and the surface roughness Ra of the surface including minute dents is 0.05 to 0.30 μm, scratches are confirmed on the mounting surface of the electrostatic adsorption device, and the surface roughness Ra is 0.2 μm or more. The total number of particles increased to 20,000 per 8 inch wafer.
On the other hand, when the surface was finished with no dents, scratches were confirmed on the mounting surface of the electrostatic chuck, and the total number of particles further increased to 50,000.
［実施例２］
実施例１と同様に熱分解窒化硼素絶縁層を設けた静電吸着装置を作製し、その表面にサンドブラストにて微小凹みを設けて、更に微小凹みを残しながらウエハと接する最表面のみをラッピング研摩して、微小凹みを含む表面の表面粗さＲａを０．０５〜０．３０μｍとし、かつウエハと接する最表面の表面粗さＲａを０．０１〜０．０４μｍに仕上げて、被吸着物を吸着する絶縁層の動摩擦係数が０．３以下の特性を有する種々の静電吸着装置を作製した。
[Example 2]
As in Example 1, an electrostatic adsorption device provided with a pyrolytic boron nitride insulating layer was prepared, and a micro dent was provided on the surface thereof by sandblasting, and only the outermost surface contacting the wafer was left while lapping and polishing. Then, the surface roughness Ra of the surface including the minute dent is set to 0.05 to 0.30 μm, and the surface roughness Ra of the outermost surface in contact with the wafer is finished to 0.01 to 0.04 μm. Various electrostatic adsorption devices having the characteristic that the dynamic friction coefficient of the insulating layer to be adsorbed is 0.3 or less were prepared.
実施例１と同様にパーティクル測定を行ったところ、表面に微小凹みを有し、微小凹みを含む表面の表面粗さＲａが０．０５μｍ以上０．３０μｍ以下で、かつ被吸着物と接する最表面の表面粗さＲａを０．０４μｍ以下としたものはウエハ吸着面及び静電吸着装置の載置面にはキズ、凹みは肉眼ではほとんど確認されず、０．２μｍ以上のパーティクル総数はいずれも８インチウエハあたり１０，０００個以下と良好であった。 When the particle measurement was performed in the same manner as in Example 1, the surface had a micro-dent, the surface roughness Ra of the surface including the micro-dent was 0.05 μm or more and 0.30 μm or less, and the outermost surface in contact with the object to be adsorbed When the surface roughness Ra is 0.04 μm or less, scratches and dents are hardly confirmed with the naked eye on the wafer attracting surface and the mounting surface of the electrostatic attracting device, and the total number of particles of 0.2 μm or more is 8 It was good at 10,000 or less per inch wafer.
［実施例３］
実施例１と同様に支持基材、静電吸着用電極と発熱層を設け、この両面にアンモニアと三塩化硼素とメタンと四塩化珪素の混合比（容量比）を８：１：１：１として圧力５Ｔｏｒｒで反応させて、反応温度を１，６００℃、１，７００℃、１，８００℃、１，９００℃、２，０００℃と条件を変えて、厚さ２００μｍの炭素と珪素を含有した熱分解窒化硼素絶縁層を設け、静電吸着装置を作製した。この条件で作製された膜には炭素０．０１〜５質量％、珪素０．０１〜１５質量％が含有され、ビッカース硬度Ｈｖは５０〜１０００の範囲であった。その表面に微小凹みを設けて、実施例２と同様に微小凹みを含む表面の表面粗さＲａを０．０５μｍ以上０．３０μｍ以下に、ウエハと接する最表面の表面粗さＲａを０．０４μｍ以下に仕上げて、被吸着物を吸着する絶縁層の動摩擦係数が０．３以下の特性を有する種々の静電吸着装置を作製した。
その結果、ビッカース硬度Ｈｖが５０以上１０００以下であるものは、ウエハ吸着面及び静電吸着装置の載置面にはキズ、凹みは肉眼ではほとんど確認されず、０．２μｍ以上のパーティクル総数はいずれも８インチウエハあたり１０，０００個以下と良好であった。
[Example 3]
In the same manner as in Example 1, a support base, an electrostatic adsorption electrode, and a heat generation layer were provided, and the mixing ratio (capacity ratio) of ammonia, boron trichloride, methane, and silicon tetrachloride was 8: 1: 1: 1 on both sides. The reaction temperature is 1,600 ° C., 1,700 ° C., 1,800 ° C., 1,900 ° C., 2,000 ° C., and the conditions are changed, and carbon and silicon with a thickness of 200 μm are contained. The pyrolytic boron nitride insulating layer was provided to produce an electrostatic adsorption device. The film produced under these conditions contained 0.01 to 5% by mass of carbon and 0.01 to 15% by mass of silicon, and the Vickers hardness Hv was in the range of 50 to 1000. A micro-dent is provided on the surface, the surface roughness Ra of the surface including the micro-dent is 0.05 μm or more and 0.30 μm or less, and the surface roughness Ra of the outermost surface in contact with the wafer is 0.04 μm as in Example 2. Finished as follows, various electrostatic adsorption devices having a characteristic that the coefficient of dynamic friction of the insulating layer that adsorbs the object to be adsorbed is 0.3 or less were produced.
As a result, when the Vickers hardness Hv is 50 or more and 1000 or less, scratches and dents are hardly confirmed with the naked eye on the wafer attracting surface and the mounting surface of the electrostatic attracting device, and the total number of particles of 0.2 μm or more Was as good as 10,000 or less per 8 inch wafer.
ビッカース硬度Ｈｖが５０以上１０００以下の膜は炭素を０．１〜２０質量％、珪素を０．１〜２０質量％含有していた。また、炭素、珪素の他にアルミニウム、イットリウム、チタンのうち少なくとも１種類の元素が熱分解窒化硼素に含ませることにより同様の結果が得られた。 A film having a Vickers hardness Hv of 50 or more and 1000 or less contained 0.1 to 20% by mass of carbon and 0.1 to 20% by mass of silicon. Similar results were obtained by including pyrolytic boron nitride containing at least one element of aluminum, yttrium, and titanium in addition to carbon and silicon.
なお、本発明は、上記実施形態に限定されるものではない。上記実施形態は、例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同
一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。
The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
１ 静電吸着機能を有する加熱装置支持基材
２ 支持基板
３ａ，３ｂ 双極型静電吸着用電極
４ 発熱層
５ 絶縁層
DESCRIPTION OF SYMBOLS 1 Heating device support base material which has an electrostatic adsorption function 2 Support substrate 3a, 3b Bipolar type electrode for electrostatic adsorption 4 Heat generating layer 5 Insulating layer
Claims (6)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007002138A JP2010097961A (en) | 2007-01-10 | 2007-01-10 | Electrostatic chuck |
| PCT/JP2008/050018 WO2008084770A1 (en) | 2007-01-10 | 2008-01-07 | Electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007002138A JP2010097961A (en) | 2007-01-10 | 2007-01-10 | Electrostatic chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2010097961A true JP2010097961A (en) | 2010-04-30 |
Family
ID=39608659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007002138A Pending JP2010097961A (en) | 2007-01-10 | 2007-01-10 | Electrostatic chuck |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2010097961A (en) |
| WO (1) | WO2008084770A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018521344A (en) * | 2015-07-02 | 2018-08-02 | エーエスエムエル ネザーランズ ビー．ブイ． | Substrate holder, lithographic apparatus, and device manufacturing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3767719B2 (en) * | 1997-10-30 | 2006-04-19 | 信越化学工業株式会社 | Electrostatic chuck |
| JP2004014603A (en) * | 2002-06-04 | 2004-01-15 | Ngk Spark Plug Co Ltd | Suction chuck |
| JP2004356350A (en) * | 2003-05-28 | 2004-12-16 | Kyocera Corp | Electrostatic chuck |
| JP4309714B2 (en) * | 2003-08-27 | 2009-08-05 | 信越化学工業株式会社 | Heating device with electrostatic adsorption function |
-
2007
- 2007-01-10 JP JP2007002138A patent/JP2010097961A/en active Pending
-
2008
- 2008-01-07 WO PCT/JP2008/050018 patent/WO2008084770A1/en active Application Filing
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018521344A (en) * | 2015-07-02 | 2018-08-02 | エーエスエムエル ネザーランズ ビー．ブイ． | Substrate holder, lithographic apparatus, and device manufacturing method |
| US10453734B2 (en) | 2015-07-02 | 2019-10-22 | Asml Netherlands B.V. | Substrate holder, a lithographic apparatus and method of manufacturing devices |
| JP2020129131A (en) * | 2015-07-02 | 2020-08-27 | エーエスエムエル ネザーランズ ビー．ブイ． | Substrate holder, lithographic apparatus and method of manufacturing devices |
| JP7068378B2 (en) | 2015-07-02 | 2022-05-16 | エーエスエムエル ネザーランズ ビー．ブイ． | Board holder, lithography equipment and device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008084770A1 (en) | 2008-07-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10395963B2 (en) | Electrostatic chuck | |
| JP4417197B2 (en) | Susceptor device | |
| JP4739039B2 (en) | Electrostatic chuck device | |
| JP2008091353A (en) | Electrostatic chuck | |
| WO2012020831A1 (en) | Electrostatic chuck | |
| JP2020035905A (en) | Electrostatic chuck device and manufacturing method therefor | |
| JP2001351966A (en) | Suscepter and method for manufacturing the suscepter | |
| JP7001165B2 (en) | Manufacturing method of electrostatic chuck device and electrostatic chuck device | |
| JP2007201068A (en) | Electrostatic chuck | |
| KR100450475B1 (en) | Electrostatic chucks and process for producing the same | |
| JP4309714B2 (en) | Heating device with electrostatic adsorption function | |
| JP2007317820A (en) | Electrostatic chucking device | |
| JP2008300374A (en) | Electrostatic suction apparatus | |
| JP2008177339A (en) | Electrostatic chuck | |
| JP2010097961A (en) | Electrostatic chuck | |
| KR20050054950A (en) | Electrostatic chuck having a low level of particle generation and method of fabricating same | |
| JPH09237824A (en) | Article holder | |
| JP2008159900A (en) | Ceramic heater with electrostatic chuck | |
| JP2007299867A (en) | Electrostatic chuck and its manufacturing method | |
| JP6702526B1 (en) | Electrostatic chuck device | |
| WO2020170514A1 (en) | Electrostatic chuck device | |
| JP4676589B2 (en) | Vacuum tweezers | |
| JP4255019B2 (en) | Material for heat treatment | |
| KR20040105276A (en) | Hot plate for semiconductor manufacturing apparatus | |
| KR20130123268A (en) | Chuck spacing mask for reducing contacting area to wafer and manufacturing method thereof |