JP2010067937A - Manufacturing method of schottky barrier diode, and schottky barrier diode - Google Patents

Manufacturing method of schottky barrier diode, and schottky barrier diode Download PDF

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JP2010067937A
JP2010067937A JP2008266536A JP2008266536A JP2010067937A JP 2010067937 A JP2010067937 A JP 2010067937A JP 2008266536 A JP2008266536 A JP 2008266536A JP 2008266536 A JP2008266536 A JP 2008266536A JP 2010067937 A JP2010067937 A JP 2010067937A
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semiconductor layer
barrier diode
schottky barrier
oxide film
manufacturing
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JP5435922B2 (en
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Yusuke Maeyama
雄介 前山
Masaaki Shimizu
正章 清水
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Shindengen Electric Manufacturing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a Schottky barrier diode, with which a leakage current when applying a reverse voltage can be reduced, and a Schottky barrier diode. <P>SOLUTION: An NO oxide film 3 containing silicon carbide, oxygen, and nitrogen is formed on a semiconductor layer 1 comprising silicon carbide, and then a hole piercing the NO oxide layer 3 is formed. N atoms 4 on the surface of the semiconductor layer 1 exposed by this step are removed. An electrode 7 forming a Schottky junction together with the semiconductor layer 1 is formed on the semiconductor layer 1 from which N atoms on the surface have been removed in this step. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、逆方向電圧印加時の漏れ電流の低減を図ったショットキーバリアダイオードの製造方法およびショットキーバリアダイオードに関する。   The present invention relates to a method for manufacturing a Schottky barrier diode and a Schottky barrier diode that reduce a leakage current when a reverse voltage is applied.

酸化膜をショットキーバリアダイオード等のデバイスの絶縁膜として利用する場合、逆方向電圧印加時の酸化膜の信頼性は酸化膜と半導体層の界面準位に依存する。例えば、ＳｉＣ（炭化珪素）酸化膜では、界面準位の密度が高く、界面準位を介した漏れ電流が流れるため、信頼性が悪い。これに対して、Ｎ（窒素）を構成元素として含む酸化膜（以下、ＮＯ酸化膜と記載する）では、界面に存在する未結合手をＮ原子が終端するため、界面準位の密度が低く、信頼性が高い。このＮＯ酸化膜をデバイスに適用した例として、特許文献１にはＮＯ酸化膜をゲート絶縁膜に使用したＴＦＴ（Thin Film Transistor）が記載されている。
特開平８−７８６９３号公報 When an oxide film is used as an insulating film of a device such as a Schottky barrier diode, the reliability of the oxide film when a reverse voltage is applied depends on the interface state between the oxide film and the semiconductor layer. For example, in a SiC (silicon carbide) oxide film, the interface state density is high, and a leakage current flows through the interface state, so that the reliability is poor. On the other hand, in an oxide film containing N (nitrogen) as a constituent element (hereinafter referred to as a NO oxide film), N atoms terminate at dangling bonds present at the interface, so the interface state density is low. High reliability. As an example of applying this NO oxide film to a device, Patent Document 1 describes a TFT (Thin Film Transistor) using an NO oxide film as a gate insulating film.
JP-A-8-78693

しかし、ＳｉＣからなる半導体層を有するＳｉＣショットキーバリアダイオードにＮＯ酸化膜を適用した場合、酸素酸化膜を適用した場合よりも逆方向電圧印加時の漏れ電流が増加するという問題がある。以下、この問題の原因を説明する。   However, when a NO oxide film is applied to a SiC Schottky barrier diode having a semiconductor layer made of SiC, there is a problem that leakage current at the time of applying a reverse voltage is higher than when an oxygen oxide film is applied. Hereinafter, the cause of this problem will be described.

図４に示すように、従来のＳｉＣショットキーバリアダイオードの製造工程では、低濃度のＮ型不純物を含むＳｉＣからなる半導体層１００の表面に、Ｐ型不純物を含むＳｉＣからなるガードリング１０１を形成し、さらに半導体層１００およびガードリング１０１上にＮＯ酸化膜１０２を形成する（図４（ａ））。ＮＯ酸化膜１０２を形成した後の半導体層１００の表面には、Ｎ原子１０３が蓄積している。   As shown in FIG. 4, in the manufacturing process of the conventional SiC Schottky barrier diode, a guard ring 101 made of SiC containing P-type impurities is formed on the surface of a semiconductor layer 100 made of SiC containing low-concentration N-type impurities. Further, an NO oxide film 102 is formed on the semiconductor layer 100 and the guard ring 101 (FIG. 4A). N atoms 103 are accumulated on the surface of the semiconductor layer 100 after the NO oxide film 102 is formed.

続いて、電極を形成する位置に対応するＮＯ酸化膜１０２を除去し、コンタクトホールを形成する（図４（ｂ））。この工程によって露出した半導体層１００およびガードリング１０１上に電極１０４を形成する（図４（ｃ））。半導体層１００と電極１０４の間にはショットキー接合が形成されている。   Subsequently, the NO oxide film 102 corresponding to the position where the electrode is to be formed is removed, and a contact hole is formed (FIG. 4B). An electrode 104 is formed on the semiconductor layer 100 and the guard ring 101 exposed by this process (FIG. 4C). A Schottky junction is formed between the semiconductor layer 100 and the electrode 104.

ＮＯ酸化膜１０２に電極用のコンタクトホールを形成した後に露出する半導体層の表面にはＮ原子１０３が残留している。逆方向電圧印加時には、Ｎ原子１０３がＮ型のドーパントとして作用し、電流が流れやすくなるため、逆方向電圧印加時の漏れ電流が増加すると考えられる。上述したように、ＮＯ酸化膜は、界面準位の密度が低く、逆方向電圧印加時の信頼性を向上できる性質を有していながら、従来のＳｉＣショットキーバリアダイオードでは、その性質を発揮できていない。   N atoms 103 remain on the surface of the semiconductor layer exposed after the contact holes for electrodes are formed in the NO oxide film 102. When the reverse voltage is applied, the N atom 103 acts as an N-type dopant, and current flows easily. Therefore, it is considered that the leakage current when the reverse voltage is applied increases. As described above, the NO oxide film has the property that the density of the interface state is low and the reliability when the reverse voltage is applied can be improved, but the conventional SiC Schottky barrier diode can exhibit the property. Not.

本発明は、上記に鑑みてなされたものであって、逆方向電圧印加時の漏れ電流を低減することができるショットキーバリアダイオードの製造方法およびショットキーバリアダイオードを提供することを目的とする。   The present invention has been made in view of the above, and an object of the present invention is to provide a Schottky barrier diode manufacturing method and a Schottky barrier diode that can reduce a leakage current when a reverse voltage is applied.

本発明は、上記の課題を解決するためになされたもので、炭化珪素からなる半導体層上に、炭化珪素、酸素、および窒素を含む酸化膜を形成する第１の工程と、前記酸化膜を貫通する孔を形成する第２の工程と、前記第２の工程によって露出した前記半導体層の表面の窒素原子を除去する第３の工程と、前記第３の工程によって表面の窒素原子が除去された前記半導体層上に、前記半導体層とショットキー接合を形成する電極を形成する第４の工程と、を備えたことを特徴とするショットキーバリアダイオードの製造方法である。   The present invention has been made to solve the above-described problems. A first step of forming an oxide film containing silicon carbide, oxygen, and nitrogen on a semiconductor layer made of silicon carbide; and A second step of forming a through-hole, a third step of removing nitrogen atoms on the surface of the semiconductor layer exposed by the second step, and a nitrogen atom on the surface being removed by the third step. And a fourth step of forming an electrode for forming a Schottky junction with the semiconductor layer on the semiconductor layer. A method of manufacturing a Schottky barrier diode, comprising:

本発明のショットキーバリアダイオードの製造方法によれば、電極と接触する位置にある半導体層の表面の窒素原子が除去されるので、逆方向電圧印加時の漏れ電流を低減することができる。   According to the method for manufacturing a Schottky barrier diode of the present invention, since nitrogen atoms on the surface of the semiconductor layer located in contact with the electrode are removed, leakage current when a reverse voltage is applied can be reduced.

また、本発明のショットキーバリアダイオードの製造方法は、前記第３の工程において、前記半導体層の表面を酸素プラズマで処理することを特徴とする。   Also, the method for manufacturing a Schottky barrier diode of the present invention is characterized in that, in the third step, the surface of the semiconductor layer is treated with oxygen plasma.

本発明のショットキーバリアダイオードの製造方法によれば、半導体層の表面を酸素プラズマで処理することによって、逆方向電圧印加時の漏れ電流を大幅に低減することができる。   According to the method for manufacturing a Schottky barrier diode of the present invention, by treating the surface of the semiconductor layer with oxygen plasma, the leakage current when applying a reverse voltage can be greatly reduced.

また、本発明は、上記のショットキーバリアダイオードの製造方法によって製造されたショットキーバリアダイオードである。   Further, the present invention is a Schottky barrier diode manufactured by the above-described method for manufacturing a Schottky barrier diode.

本発明のショットキーバリアダイオードによれば、電極と接触する位置にある半導体層の表面の窒素原子が除去されているので、逆方向電圧印加時の漏れ電流を低減することができる。   According to the Schottky barrier diode of the present invention, since the nitrogen atoms on the surface of the semiconductor layer located in contact with the electrode are removed, the leakage current when applying the reverse voltage can be reduced.

本発明によれば、逆方向電圧印加時の漏れ電流を低減することができるという効果が得られる。   According to the present invention, it is possible to reduce the leakage current when a reverse voltage is applied.

以下、図面を参照し、本発明の実施形態を説明する。図１および図２は、本発明の一実施形態によるＳｉＣショットキーバリアダイオードの製造方法を示している。以下の製造方法は一例であり、これに限定する必要はない。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 and 2 show a method of manufacturing a SiC Schottky barrier diode according to an embodiment of the present invention. The following manufacturing method is an example, and it is not necessary to limit to this.

まず、Ｎ型不純物を含むＳｉＣからなる半導体層１を構成する基板を用意する（図１（ａ））。この半導体層１の表面にＰ型不純物を注入し、アニールを行うことによってガードリング２を形成する（図１（ｂ））。さらに、半導体層１およびガードリング２上にＮＯ酸化膜３を形成する（図１（ｃ））。ＮＯ酸化膜３は、構成元素として、ＳｉＣ、Ｏ、Ｎを含んでいる。ＮＯ酸化膜３を形成する方法としては、例えば酸素雰囲気中でドライ酸化を行った後、ＮおよびＯを構成元素に含む一酸化窒素等の雰囲気中でアニールを行えばよい。あるいは、一酸化窒素等の雰囲気中で酸化を行うことによってＮＯ酸化膜３を形成してもよい。ＮＯ酸化膜３を形成した後の半導体層１の表面には、Ｎ原子４が蓄積している。   First, a substrate constituting the semiconductor layer 1 made of SiC containing an N-type impurity is prepared (FIG. 1A). A guard ring 2 is formed by injecting a P-type impurity into the surface of the semiconductor layer 1 and performing annealing (FIG. 1B). Further, an NO oxide film 3 is formed on the semiconductor layer 1 and the guard ring 2 (FIG. 1C). The NO oxide film 3 contains SiC, O, and N as constituent elements. As a method for forming the NO oxide film 3, for example, after dry oxidation is performed in an oxygen atmosphere, annealing may be performed in an atmosphere of nitrogen monoxide containing N and O as constituent elements. Alternatively, the NO oxide film 3 may be formed by performing oxidation in an atmosphere such as nitrogen monoxide. N atoms 4 accumulate on the surface of the semiconductor layer 1 after the formation of the NO oxide film 3.

ＮＯ酸化膜３の形成時には、半導体層１の裏面にもＮＯ酸化膜が形成されるが、図１では図示を省略している。ＮＯ酸化膜３の形成後、ＮＯ酸化膜３上に保護用のレジストを堆積し、ＢＨＦ（Buffered HF）によって半導体層１の裏面のＮＯ酸化膜を除去することが可能である。半導体層１の裏面のＮＯ酸化膜を除去する工程については図１では図示を省略している。続いて、半導体層１の裏面上にＮｉ（ニッケル）等の金属材料を蒸着等により堆積し、電極５を形成する（図１（ｄ））。電極５の形成後、半導体層１と電極５のオーミック接触性を向上するために熱処理を行ってもよい。   When the NO oxide film 3 is formed, an NO oxide film is also formed on the back surface of the semiconductor layer 1, but the illustration is omitted in FIG. 1. After the formation of the NO oxide film 3, a protective resist is deposited on the NO oxide film 3, and the NO oxide film on the back surface of the semiconductor layer 1 can be removed by BHF (Buffered HF). The process of removing the NO oxide film on the back surface of the semiconductor layer 1 is not shown in FIG. Subsequently, a metal material such as Ni (nickel) is deposited on the back surface of the semiconductor layer 1 by vapor deposition or the like to form the electrode 5 (FIG. 1D). After the formation of the electrode 5, heat treatment may be performed in order to improve the ohmic contact between the semiconductor layer 1 and the electrode 5.

続いて、ＢＨＦによって、電極を形成する位置に対応するＮＯ酸化膜３を除去し、ＮＯ酸化膜３を貫通するコンタクトホール（孔）を形成する（図２（ａ））。コンタクトホールを形成することによって露出した半導体層１の表面にはＮ原子４が残留している。酸素プラズマ６によって半導体層１の表面を処理し、半導体層１の表面に残留しているＮ原子４と反応させ、Ｎ原子４を除去する（図２（ｂ））。続いて、コンタクトホールを形成することによって露出した半導体層１およびガードリング２上にＮｉやＴｉ（チタン）等の金属材料を蒸着等により堆積し、電極７を形成する（図２（ｃ））。半導体層１と電極７の間にはショットキー接合が形成されている。電極７は単層構造でもよいし、複数層からなる構造でもよい。   Subsequently, the NO oxide film 3 corresponding to the position where the electrode is formed is removed by BHF, and a contact hole (hole) penetrating the NO oxide film 3 is formed (FIG. 2A). N atoms 4 remain on the surface of the semiconductor layer 1 exposed by forming the contact holes. The surface of the semiconductor layer 1 is treated with the oxygen plasma 6 and reacted with the N atoms 4 remaining on the surface of the semiconductor layer 1 to remove the N atoms 4 (FIG. 2B). Subsequently, a metal material such as Ni or Ti (titanium) is deposited by vapor deposition or the like on the semiconductor layer 1 and the guard ring 2 exposed by forming the contact hole to form the electrode 7 (FIG. 2C). . A Schottky junction is formed between the semiconductor layer 1 and the electrode 7. The electrode 7 may have a single layer structure or a structure composed of a plurality of layers.

図３は、逆方向電圧に対する漏れ電流を示している。ＮＯ酸化膜３を除去した後に酸素プラズマによる処理を行った場合には、酸素プラズマによる処理を行わなかった場合と比較して、漏れ電流の値が約１桁低減している。   FIG. 3 shows the leakage current with respect to the reverse voltage. When the treatment with oxygen plasma is performed after the NO oxide film 3 is removed, the value of the leakage current is reduced by about one digit compared with the case where the treatment with oxygen plasma is not performed.

半導体層１の表面のＮ原子４を除去する他の方法として、ＮＯ酸化膜３を除去した後に９００℃〜１１００℃で半導体層１の表面を短時間酸化し、これによって形成された酸化膜をＢＨＦによって除去する犠牲酸化を行ってもよい。   As another method of removing the N atoms 4 on the surface of the semiconductor layer 1, the surface of the semiconductor layer 1 is oxidized for a short time at 900 ° C. to 1100 ° C. after removing the NO oxide film 3, and an oxide film formed thereby is obtained. Sacrificial oxidation removed by BHF may be performed.

上述したように、本実施形態によれば、逆方向電圧印加時の漏れ電流を低減することができる。特に、ＮＯ酸化膜を除去した後に、酸素プラズマによって半導体層の表面を処理し、半導体層の表面のＮ原子を除去することによって、漏れ電流を大幅に低減することができる。したがって、ＮＯ酸化膜が本来有している逆方向電圧印加時の高信頼性を発揮することができる。   As described above, according to the present embodiment, it is possible to reduce a leakage current when a reverse voltage is applied. In particular, after removing the NO oxide film, the leakage current can be greatly reduced by treating the surface of the semiconductor layer with oxygen plasma and removing N atoms on the surface of the semiconductor layer. Therefore, high reliability at the time of applying the reverse voltage inherent to the NO oxide film can be exhibited.

以上、図面を参照して本発明の実施形態について詳述してきたが、具体的な構成は上記の実施形態に限られるものではなく、本発明の要旨を逸脱しない範囲の設計変更等も含まれる。   As described above, the embodiments of the present invention have been described in detail with reference to the drawings. However, the specific configuration is not limited to the above-described embodiments, and includes design changes and the like without departing from the gist of the present invention. .

本発明の一実施形態によるショットキーバリアダイオードの製造方法を説明するための模式断面図である。It is a schematic cross section for demonstrating the manufacturing method of the Schottky barrier diode by one Embodiment of this invention. 本発明の一実施形態によるショットキーバリアダイオードの製造方法を説明するための模式断面図である。It is a schematic cross section for demonstrating the manufacturing method of the Schottky barrier diode by one Embodiment of this invention. 本発明の一実施形態によるショットキーバリアダイオードの漏れ電流特性を説明するためのグラフである。4 is a graph for explaining leakage current characteristics of a Schottky barrier diode according to an embodiment of the present invention. 従来のショットキーバリアダイオードの製造方法を説明するための模式断面図である。It is a schematic cross section for demonstrating the manufacturing method of the conventional Schottky barrier diode.

符号の説明Explanation of symbols

１，１００・・・半導体層、２，１０１・・・ガードリング、３，１０２・・・ＮＯ酸化膜、４，１０３・・・Ｎ原子、５，７，１０４・・・電極、６・・・酸素プラズマ   DESCRIPTION OF SYMBOLS 1,100 ... Semiconductor layer, 2,101 ... Guard ring, 3,102 ... NO oxide film, 4,103 ... N atom, 5, 7, 104 ... Electrode, 6 ...・ Oxygen plasma

Claims (3)

炭化珪素からなる半導体層上に、炭化珪素、酸素、および窒素を含む酸化膜を形成する第１の工程と、
前記酸化膜を貫通する孔を形成する第２の工程と、
前記第２の工程によって露出した前記半導体層の表面の窒素原子を除去する第３の工程と、
前記第３の工程によって表面の窒素原子が除去された前記半導体層上に、前記半導体層とショットキー接合を形成する電極を形成する第４の工程と、
を備えたことを特徴とするショットキーバリアダイオードの製造方法。 A first step of forming an oxide film containing silicon carbide, oxygen, and nitrogen on a semiconductor layer made of silicon carbide;
A second step of forming a hole penetrating the oxide film;
A third step of removing nitrogen atoms on the surface of the semiconductor layer exposed by the second step;
A fourth step of forming an electrode for forming a Schottky junction with the semiconductor layer on the semiconductor layer from which nitrogen atoms on the surface have been removed by the third step;
A method for manufacturing a Schottky barrier diode, comprising: 前記第３の工程において、前記半導体層の表面を酸素プラズマで処理することを特徴とする請求項１に記載のショットキーバリアダイオードの製造方法。   2. The method of manufacturing a Schottky barrier diode according to claim 1, wherein the surface of the semiconductor layer is treated with oxygen plasma in the third step. 請求項１または請求項２に記載のショットキーバリアダイオードの製造方法によって製造されたショットキーバリアダイオード。   A Schottky barrier diode manufactured by the method for manufacturing a Schottky barrier diode according to claim 1.
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