JP2010049268A - モデルベース光近接補正用収束技術 - Google Patents
モデルベース光近接補正用収束技術 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
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Abstract
【解決手段】マッピングは、レチクル・フラグメントとターゲット・レイアウト・フラグメントの間に1対1の対応関係を形成するとは限らない。すなわち、多数のレチクル・フラグメントが一つのターゲット・レイアウト・フラグメントにマップされ得る。ターゲット・レイアウト・フラグメントに対するエッジ配置誤差は、対応したレチクル・フラグメントの位置決め補正を行うために使用される。エッジ配置誤差は、例えば、レチクルを使用する製造プロセスをシミュレートするシミュレーション処理を用いて判定される。
【選択図】図11
Description
本願は、米国特許出願「セグメント対応関係を利用した集積回路設計補正(INTEGRATED CIRCUIT DESIGN CORRECTION USING SEGMENT CORRESPONDENCE”に関連している。
(構成)及び変更は、図1の残りのコンポーネントと共に使用されえる。光源100は、ウエハー130の方へ光を照射する。マスク/レチクル110は、ウエハー130のある所定の部分に対する光を遮る。ステッパー/スキャナ映像システム120は、マスク/レチクル110のパターンをウエハー130上に現像中の多数の集積回路のうちの一つに向ける。
110 マスク/レチクル
120 ステッパー/スキャナ映像システム
130 ウエハー
1600 EDAツール
1602 シミュレーションツール
1604 ツールモジュール
1700 コンピュータシステム
1702 プロセッサ
1704 メモリ
1706 システムバス
1708 不揮発性大容量記憶装置
1710 入出力装置
1712 通信インタフェース
1704 システムメモリ
Claims (7)
- フォトリソグラフィ処理によりウエハーにターゲット・パターンの特徴を転写するように用いられる2つ又はそれ以上のレチクル・レイアウトにおける光学プロセス補正を実行する方法であって:
前記2つ又はそれ以上のレチクル・レイアウトにおけるパターンを複数のエッジ・フラグメントに分割する段階;
前記ターゲット・パターンを複数のエッジ・フラグメントに分割する段階;
前記ターゲット・パターンにおけるエッジ・フラグメントに前記2つ又はそれ以上のレチクル・レイアウトにおけるエッジ・フラグメントをマッピングする段階であって、
レチクルにおけるエッジ・フラグメントを選択し、該選択されたエッジ・フラグメントに基づいて前記ターゲット・パターンにおける位置を決定し、
前記2つ又はそれ以上のレチクル・レイアウトにおける前記エッジ・フラグメントに対してマッピングするように潜在的なエッジ・フラグメントとして前記位置の所定の距離の範囲内にある前記ターゲット・パターンにおけるエッジ・フラグメントを決定し、
前記2つ又はそれ以上のレチクル・レイアウトにおけるエッジ・フラグメントに対してマッピングするように前記ターゲット・パターンにおいて1つ又はそれ以上の前記潜在的なエッジ・フラグメントを選択する、
段階;
前記2つ又はそれ以上のレチクル・レイアウトがウエハーにおける前記ターゲット・パターンをどのように転写するかをシミュレートし、前記シミュレートされた転写におけるエッジ・フラグメントの誤差を決定する段階;並びに
前記誤差を減少するように、前記2つ又はそれ以上のレチクル・レイアウトにおいて前記マッピングされたエッジ・フラグメントの前記位置を移動させるように光学プロセス補正を実行する段階;
を有する方法。 - 請求項1に記載の方法であって:
前記エッジ・フラグメントに対してマッピングされることが可能である前記ターゲット・パターンの前記潜在的なエッジ・フラグメントから、所定の距離の範囲内にあるが、レチクル・レイアウトのエッジ・フラグメントに対して平行でない、前記ターゲット・パターンにおけるエッジ・フラグメントを取り除く段階;
を更に有する、方法。 - 請求項1に記載の方法であって:
ターゲット・パターンにおける所定の位置と前記エッジ・フラグメントとの間に他のエッジ・フラグメントが存在する、前記所定の距離の範囲内にあるが、前記レチクル・レイアウトのエッジ・フラグメントに対してマッピングされることが可能である前記ターゲット・パターンの前記潜在的なエッジ・フラグメントから前記ターゲット・パターンにおける特徴によりブロックされる、エッジ・フラグメントを取り除く段階;
を更に有する、方法。 - 請求項1に記載の方法であって:
前記所定の距離の範囲内にある前記ターゲット・パターンにおける前記エッジ・フラグメントと前記2つ又はそれ以上のレチクル・レイアウトにおける前記エッジ・フラグメントとの間の距離及び角度を決定する段階;
を更に有する、方法。 - 請求項4に記載の方法であって:
前記2つ又はそれ以上のレチクル・レイアウトの前記エッジ・フラグメントに対してマッピングするように最小距離を有する前記ターゲット・パターンのエッジ・フラグメントを選択する段階;
を更に有する、方法。 - 請求項4に記載の方法であって:
前記2つ又はそれ以上のレチクル・レイアウトにおける前記エッジ・フラグメントに対してマッピングするように最小角度を有する前記ターゲット・パターンのエッジ・フラグメントを選択する段階;
を更に有する、方法。 - 請求項1乃至6の何れか一項に記載の方法を実行するように、コンピュータにより実行可能である一連のプログラム命令を有するコンピュータ読み取り可能媒体。
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US09/613,214 US6430737B1 (en) | 2000-07-10 | 2000-07-10 | Convergence technique for model-based optical and process correction |
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JP2007148490A Division JP2007279759A (ja) | 2000-07-10 | 2007-06-04 | モデルベース光近接補正用収束技術 |
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JP2002508684A Pending JP2004502973A (ja) | 2000-07-10 | 2001-07-06 | モデルベース光近接補正用収束技術 |
JP2007148490A Pending JP2007279759A (ja) | 2000-07-10 | 2007-06-04 | モデルベース光近接補正用収束技術 |
JP2009234332A Expired - Lifetime JP5039882B2 (ja) | 2000-07-10 | 2009-10-08 | 光近接補正用収束技術 |
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EP (1) | EP1299824B1 (ja) |
JP (3) | JP2004502973A (ja) |
AT (1) | ATE553416T1 (ja) |
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Also Published As
Publication number | Publication date |
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WO2002005145A1 (en) | 2002-01-17 |
JP5039882B2 (ja) | 2012-10-03 |
EP1299824A4 (en) | 2005-08-24 |
ATE553416T1 (de) | 2012-04-15 |
US20040216065A1 (en) | 2004-10-28 |
JP2004502973A (ja) | 2004-01-29 |
US20060236298A1 (en) | 2006-10-19 |
US6430737B1 (en) | 2002-08-06 |
US7028284B2 (en) | 2006-04-11 |
EP1299824B1 (en) | 2012-04-11 |
JP2007279759A (ja) | 2007-10-25 |
TW525225B (en) | 2003-03-21 |
EP1299824A1 (en) | 2003-04-09 |
US7367009B2 (en) | 2008-04-29 |
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