JP2010020322A - 表示基板 - Google Patents
表示基板 Download PDFInfo
- Publication number
- JP2010020322A JP2010020322A JP2009165334A JP2009165334A JP2010020322A JP 2010020322 A JP2010020322 A JP 2010020322A JP 2009165334 A JP2009165334 A JP 2009165334A JP 2009165334 A JP2009165334 A JP 2009165334A JP 2010020322 A JP2010020322 A JP 2010020322A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- pattern
- conductive film
- substrate
- semiconductor pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 66
- 239000010408 film Substances 0.000 claims abstract description 96
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 239000010409 thin film Substances 0.000 claims abstract description 57
- 239000000463 material Substances 0.000 claims description 18
- 230000007423 decrease Effects 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 3
- 229910005265 GaInZnO Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】表示基板は、基板と、基板上に設けられるゲート電極と、ゲート電極上に設けられる半導体パターンと、半導体パターン上に設けられるソース電極と、半導体パターン上に設けられてソース電極と離間するドレーン電極と、ソース電極及びドレーン電極上に設けられてソース電極及びドレーン電極をカバーする絶縁膜と、絶縁膜上に設けられて半導体パターンと整列される導電膜パターンと、ドレーン電極と電気的に接続される画素電極と、基板上に設けられて導電膜パターンと電気的に接続されるストレージ電極とを含む。
【選択図】図1
Description
151 導電膜パターン
200 表示基板
PE 画素電極
CL 共通電圧ライン
GL ゲートライン
DL データライン
TR 薄膜トランジスタ
BE 接続電極
SL ストレージライン
ST ストレージ電極
PXL 画素
Claims (10)
- 基板と、
前記基板上に設けられるゲート電極と、
前記ゲート電極の上部に設けられる半導体パターンと、
前記半導体パターン上に設けられるソース電極と、
前記ソース電極と離間して前記半導体パターン上に設けられるドレーン電極と、
前記ソース電極及び前記ドレーン電極上に設けられて前記ソース電極及び前記ドレーン電極をカバーする絶縁膜と、
前記絶縁膜上に設けられて前記半導体パターンと整列される導電膜パターンと、
前記ドレーン電極と電気的に接続される画素電極と、
前記基板上に設けられて前記画素電極と重畳し、前記導電膜パターンと電気的に接続されるストレージ電極と、
を含むことを特徴とする表示基板。 - 前記半導体パターンは、酸化物半導体を含むことを特徴とする請求項1に記載の表示基板。
- 前記基板上に設けられ、前記ゲート電極と電気的に接続されるゲートラインと、
前記ゲートラインと絶縁されて前記基板の上部に設けられるデータラインと、
前記ストレージ電極及び前記導電膜パターンと電気的に接続され前記ストレージ電極及び前記導電膜パターン側に共通電圧を提供するストレージラインと、
をさらに含むことを特徴とする請求項1に記載の表示基板。 - 前記導電膜パターン及び前記画素電極は、前記表示基板の同一層上に形成されて互いに同一の物質で形成されることを特徴とする請求項3に記載の表示基板。
- 前記ストレージライン及び前記ストレージ電極は、互いに離間し、前記導電膜パターンは、前記ストレージ電極及び前記ストレージラインを電気的に接続されることを特徴とする請求項4に記載の表示基板。
- 前記ゲート電極、前記半導体パターン、前記ソース電極、及び前記ドレーン電極によって定義される薄膜トランジスタのスレッショルド電圧は、前記共通電圧の大きさによって調節されることを特徴とする請求項3に記載の表示基板。
- 前記共通電圧の大きさが増加するほど前記スレッショルド電圧の大きさが減少し、前記共通電圧の大きさが減少するほど前記スレッショルド電圧の大きさが増加することを特徴とする請求項6に記載の表示基板。
- 平面上で前記ストレージ電極は、前記データライン及び前記データラインを間に置いて接する画素電極と重畳することを特徴とする請求項3に記載の表示基板。
- 基板と、
前記基板上に設けられ第1共通電圧が提供される導電膜パターンと、
前記導電膜パターン上に設けられ前記導電膜パターンをカバーする第1絶縁膜と、
前記第1絶縁膜上に設けられ前記導電膜パターンと整列されたソース電極と、
前記第1絶縁膜上に設けられ前記導電膜パターンと整列されたドレーン電極と、
前記ソース電極及び前記ドレーン電極上に設けられる半導体パターンと、
前記半導体パターン上に設けられる第2絶縁膜と、
前記第2絶縁膜上に設けられて前記半導体パターンと重畳するゲート電極と、
を含むことを特徴とする表示基板。 - 基板と、
前記基板上に設けられるゲート電極と、
前記ゲート電極の上部に設けられる半導体パターンと、
前記半導体パターン上に設けられるソース電極と、
前記ソース電極と離間して前記半導体パターン上に設けられるドレーン電極と、
前記ソース電極及び前記ドレーン電極上に設けられて前記ソース電極及び前記ドレーン電極をカバーする絶縁膜と、
前記絶縁膜上に設けられて前記半導体パターンと重畳し、前記ゲート電極と電気的に接続される導電膜パターンと、
を含むことを特徴とする表示基板。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20080068242A KR101488927B1 (ko) | 2008-07-14 | 2008-07-14 | 표시기판 |
KR10-2008-0068242 | 2008-07-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010020322A true JP2010020322A (ja) | 2010-01-28 |
JP5657218B2 JP5657218B2 (ja) | 2015-01-21 |
Family
ID=41504321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009165334A Active JP5657218B2 (ja) | 2008-07-14 | 2009-07-14 | 表示基板 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7847291B2 (ja) |
JP (1) | JP5657218B2 (ja) |
KR (1) | KR101488927B1 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012032749A1 (ja) * | 2010-09-09 | 2012-03-15 | シャープ株式会社 | 薄膜トランジスタ基板及びその製造方法、表示装置 |
JP2015092596A (ja) * | 2010-02-12 | 2015-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2016529723A (ja) * | 2013-09-10 | 2016-09-23 | 深▲セン▼市華星光電技術有限公司 | 薄膜トランジスタ、配列基板及び表示パネル |
JP2016174172A (ja) * | 2010-06-10 | 2016-09-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2018207124A (ja) * | 2013-06-05 | 2018-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2019204976A (ja) * | 2013-06-05 | 2019-11-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020149058A (ja) * | 2013-09-05 | 2020-09-17 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2020205453A (ja) * | 2010-04-02 | 2020-12-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2021005722A (ja) * | 2011-05-05 | 2021-01-14 | 株式会社半導体エネルギー研究所 | 表示装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8748892B2 (en) * | 2009-10-09 | 2014-06-10 | Lg Display Co., Ltd. | Thin film transistor and method for fabricating the same |
KR101272892B1 (ko) * | 2009-11-11 | 2013-06-11 | 엘지디스플레이 주식회사 | 어레이 기판 |
KR20190038687A (ko) | 2010-02-05 | 2019-04-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제조 방법 |
KR20120091638A (ko) * | 2011-02-09 | 2012-08-20 | 삼성전자주식회사 | 표시 장치 및 그 제조 방법 |
KR101619158B1 (ko) * | 2013-04-30 | 2016-05-10 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그를 이용한 유기 발광장치 |
KR20150087647A (ko) | 2014-01-22 | 2015-07-30 | 삼성디스플레이 주식회사 | 게이트 구동회로 및 이를 포함하는 표시장치 |
CN104952880A (zh) * | 2015-05-06 | 2015-09-30 | 深圳市华星光电技术有限公司 | 双栅极tft基板的制作方法及其结构 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0553147A (ja) * | 1991-08-23 | 1993-03-05 | Nec Corp | 液晶表示装置およびその製造方法 |
JPH08288519A (ja) * | 1995-04-19 | 1996-11-01 | Sharp Corp | 薄膜トランジスタ、その製造方法および液晶表示装置 |
JPH10290012A (ja) * | 1997-04-14 | 1998-10-27 | Nec Corp | アクティブマトリクス型液晶表示装置およびその製造方法 |
JP2000164873A (ja) * | 1998-11-24 | 2000-06-16 | Sony Corp | 液晶表示装置 |
JP2001284592A (ja) * | 2000-03-29 | 2001-10-12 | Sony Corp | 薄膜半導体装置及びその駆動方法 |
JP2003152193A (ja) * | 2001-08-27 | 2003-05-23 | Seiko Epson Corp | 電気光学装置および電気光学装置の製造方法、並びに投射型表示装置、電子機器 |
JP2007094233A (ja) * | 2005-09-30 | 2007-04-12 | Casio Comput Co Ltd | 液晶表示装置 |
JP2007529118A (ja) * | 2004-03-12 | 2007-10-18 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 複合酸化物を含むチャネルを有する半導体デバイス |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW289097B (ja) * | 1994-08-24 | 1996-10-21 | Hitachi Ltd |
-
2008
- 2008-07-14 KR KR20080068242A patent/KR101488927B1/ko active IP Right Grant
-
2009
- 2009-06-17 US US12/486,328 patent/US7847291B2/en active Active
- 2009-07-14 JP JP2009165334A patent/JP5657218B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0553147A (ja) * | 1991-08-23 | 1993-03-05 | Nec Corp | 液晶表示装置およびその製造方法 |
JPH08288519A (ja) * | 1995-04-19 | 1996-11-01 | Sharp Corp | 薄膜トランジスタ、その製造方法および液晶表示装置 |
JPH10290012A (ja) * | 1997-04-14 | 1998-10-27 | Nec Corp | アクティブマトリクス型液晶表示装置およびその製造方法 |
JP2000164873A (ja) * | 1998-11-24 | 2000-06-16 | Sony Corp | 液晶表示装置 |
JP2001284592A (ja) * | 2000-03-29 | 2001-10-12 | Sony Corp | 薄膜半導体装置及びその駆動方法 |
JP2003152193A (ja) * | 2001-08-27 | 2003-05-23 | Seiko Epson Corp | 電気光学装置および電気光学装置の製造方法、並びに投射型表示装置、電子機器 |
JP2007529118A (ja) * | 2004-03-12 | 2007-10-18 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 複合酸化物を含むチャネルを有する半導体デバイス |
JP2007094233A (ja) * | 2005-09-30 | 2007-04-12 | Casio Comput Co Ltd | 液晶表示装置 |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017028297A (ja) * | 2010-02-12 | 2017-02-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10916573B2 (en) | 2010-02-12 | 2021-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
JP2015092596A (ja) * | 2010-02-12 | 2015-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10535689B2 (en) | 2010-02-12 | 2020-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US11411121B2 (en) | 2010-04-02 | 2022-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2020205453A (ja) * | 2010-04-02 | 2020-12-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7437561B2 (ja) | 2010-06-10 | 2024-02-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2017175151A (ja) * | 2010-06-10 | 2017-09-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7356559B2 (ja) | 2010-06-10 | 2023-10-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7163458B2 (ja) | 2010-06-10 | 2022-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2016174172A (ja) * | 2010-06-10 | 2016-09-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020053703A (ja) * | 2010-06-10 | 2020-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2021177559A (ja) * | 2010-06-10 | 2021-11-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9190524B2 (en) | 2010-09-09 | 2015-11-17 | Sharp Kabushiki Kaisha | Thin film transistor substrate, method for producing the same, and display device |
JPWO2012032749A1 (ja) * | 2010-09-09 | 2014-01-20 | シャープ株式会社 | 薄膜トランジスタ基板及びその製造方法、表示装置 |
WO2012032749A1 (ja) * | 2010-09-09 | 2012-03-15 | シャープ株式会社 | 薄膜トランジスタ基板及びその製造方法、表示装置 |
JP2021005722A (ja) * | 2011-05-05 | 2021-01-14 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP7090130B2 (ja) | 2011-05-05 | 2022-06-23 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2022118095A (ja) * | 2011-05-05 | 2022-08-12 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
TWI792087B (zh) * | 2011-05-05 | 2023-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US11942483B2 (en) | 2011-05-05 | 2024-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2019204976A (ja) * | 2013-06-05 | 2019-11-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2018207124A (ja) * | 2013-06-05 | 2018-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020149058A (ja) * | 2013-09-05 | 2020-09-17 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2016529723A (ja) * | 2013-09-10 | 2016-09-23 | 深▲セン▼市華星光電技術有限公司 | 薄膜トランジスタ、配列基板及び表示パネル |
Also Published As
Publication number | Publication date |
---|---|
US20100006835A1 (en) | 2010-01-14 |
JP5657218B2 (ja) | 2015-01-21 |
KR20100007566A (ko) | 2010-01-22 |
US7847291B2 (en) | 2010-12-07 |
KR101488927B1 (ko) | 2015-02-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5657218B2 (ja) | 表示基板 | |
CN104752436B (zh) | 阵列基板 | |
KR102071301B1 (ko) | 유기 전계 발광 표시 장치 | |
US9053986B2 (en) | Semiconductor device and flat panel display including the same | |
US20170110483A1 (en) | Tft substrate structure | |
KR102565380B1 (ko) | 박막 트랜지스터 기판 | |
CN111199704B (zh) | 显示设备 | |
CN105161516B (zh) | 有机发光显示器及其制造方法 | |
TWI370312B (ja) | ||
US20120146029A1 (en) | Thin film transistor array panel | |
US9425251B2 (en) | Thin film transistor substrate and organic light-emitting diode (OLED) display having the same | |
US10504984B2 (en) | Light emitting circuit and driving method thereof, electronic device, thin film transistor and manufacture method thereof | |
US8237168B2 (en) | Organic light emitting display device | |
KR102308621B1 (ko) | 박막 트랜지스터 표시판 및 그 제조 방법 | |
CN105655345B (zh) | 液晶显示装置及其制造方法 | |
KR102484320B1 (ko) | 박막트랜지스터 어레이 기판 및 그의 제조방법과 이를 포함하는 유기발광표시장치 | |
KR101829805B1 (ko) | 산화물 반도체 트랜지스터 및 이의 제조 방법 | |
KR20140144566A (ko) | 디스플레이 장치의 화소 소자로 사용되는 산화물 반도체 트랜지스터 및 이의 제조 방법 | |
US11455955B2 (en) | Display device | |
US20230165057A1 (en) | Thin film transistor, thin film transistor substrate and display apparatus | |
CN110649003A (zh) | 半导体基板、阵列基板、逆变器电路及开关电路 | |
US8604469B2 (en) | Thin film transistor array panel | |
CN110047940B (zh) | 一种双沟道的tft结构 | |
TW202316678A (zh) | 顯示裝置 | |
JP2024071349A (ja) | 表示パネル及び表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120322 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120322 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20121213 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130219 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130322 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130912 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131015 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140708 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140919 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141111 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141126 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5657218 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |