JP2009536688A - 基板上に多数のナノシリンダーを有する部材の製造方法および該部材の使用 - Google Patents
基板上に多数のナノシリンダーを有する部材の製造方法および該部材の使用 Download PDFInfo
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- JP2009536688A JP2009536688A JP2009508189A JP2009508189A JP2009536688A JP 2009536688 A JP2009536688 A JP 2009536688A JP 2009508189 A JP2009508189 A JP 2009508189A JP 2009508189 A JP2009508189 A JP 2009508189A JP 2009536688 A JP2009536688 A JP 2009536688A
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- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 230000005291 magnetic effect Effects 0.000 claims abstract description 25
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 13
- 239000011148 porous material Substances 0.000 claims abstract description 9
- 229910052742 iron Inorganic materials 0.000 claims abstract description 8
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 8
- 229910052737 gold Inorganic materials 0.000 claims abstract description 7
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 4
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 21
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 15
- 230000005415 magnetization Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910020707 Co—Pt Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910005335 FePt Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229920000359 diblock copolymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- 229910020708 Co—Pd Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000653 depth-selective Mossbauer spectroscopy Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
- H01F1/009—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity bidimensional, e.g. nanoscale period nanomagnet arrays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
- H01F1/0072—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures
- H01F1/0081—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures in a non-magnetic matrix, e.g. Fe-nanowires in a nanoporous membrane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/123—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
− 非晶質系、たとえばガラス、有利にはFe−PdならびにFe−Auのために適切非晶質ガラス、および
− 磁化の垂直な配向を可能にする成長方向におけるMXフィルムの成長を媒介するために適切な格子定数を有する結晶質系。Fe−Ptに関して特に適切であるのは、MgO(001)、GaAs(001)またはSrTiO3(001)である。
Claims (10)
- 多数のナノシリンダーがその上に施与されている基板を有する部材であって、その際、それぞれのナノシリンダーは、少なくとも4の、上下に重なって存在する層を有しており、該層は交互に磁性の元素の原子Mと、非磁性元素の原子Xとからなっている部材の製造方法であって、方法工程
a)基板を準備する工程
b)前記基板を、Al2O3からなるナノポーラス膜により被覆する工程
c)前記ナノポーラス膜により被覆された前記基板に、磁性の元素の原子Mおよび非磁性の元素の原子Xとを交互に蒸着させる工程、その際、前記原子は、250℃〜400℃の範囲の蒸着温度で堆積され、
d)膜の細孔の箇所において、ナノシリンダーが前記基板上に残るように、膜を除去する工程
を有する、多数のナノシリンダーがその上に施与されている基板を有する部材の製造方法。 - M=Fe、CoまたはNi、およびX=Pd、Pt、RhまたはAuを選択する、請求項1記載の方法。
- それぞれの層が、1〜10原子層を有するように蒸着を行う、請求項1または2記載の方法。
- それぞれの層が、その一つおいて隣の層と同じ数の原子層を有するように蒸着を行う、請求項1から3までのいずれか1項記載の方法。
- 10nm〜100nmの直径および2〜100nmの高さを有するナノシリンダーを製造する、請求項1から4までのいずれか1項記載の方法。
- 10nm〜100nmの間隔を置いて配置されているナノシリンダーを製造する、請求項1から5までのいずれか1項記載の方法。
- 立方形または六角形の構造で基板上に配置されているナノシリンダーを製造する、請求項1から6までのいずれか1項記載の方法。
- 原子をそのつど電子線蒸着により堆積する、請求項1から7までのいずれか1項記載の方法。
- 膜を溶剤によって基板から除去する、請求項1から8までのいずれか1項記載の方法。
- 磁気メモリー媒体として、回路素子として、またはセンサーとしての、請求項1から9までのいずれか1項記載の方法により製造された部材の使用。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006021940A DE102006021940A1 (de) | 2006-05-11 | 2006-05-11 | Element, Verfahren zu seiner Herstellung und seine Verwendung |
PCT/EP2007/003792 WO2007131617A1 (de) | 2006-05-11 | 2007-04-28 | Verfahren zur herstellung eines elements, umfassend eine vielzahl von nanozylindern auf einem substrat, und dessen verwendung |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009536688A true JP2009536688A (ja) | 2009-10-15 |
Family
ID=38335773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009508189A Pending JP2009536688A (ja) | 2006-05-11 | 2007-04-28 | 基板上に多数のナノシリンダーを有する部材の製造方法および該部材の使用 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8337945B2 (ja) |
EP (1) | EP2016597B1 (ja) |
JP (1) | JP2009536688A (ja) |
AT (1) | ATE514169T1 (ja) |
DE (1) | DE102006021940A1 (ja) |
WO (1) | WO2007131617A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110117387A1 (en) * | 2009-11-17 | 2011-05-19 | Shivaraman Ramaswamy | Method for producing metal nanodots |
US9001322B2 (en) | 2011-08-30 | 2015-04-07 | Cornell University | Surface enhanced raman scattering (SERS) apparatus, methods and applications |
JP2019516011A (ja) | 2016-04-20 | 2019-06-13 | アーコニック インコーポレイテッドArconic Inc. | アルミニウム、コバルト、鉄、及びニッケルのfcc材料、並びにそれを用いた製品 |
WO2017184778A1 (en) | 2016-04-20 | 2017-10-26 | Arconic Inc. | Fcc materials of aluminum, cobalt and nickel, and products made therefrom |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH023102A (ja) * | 1987-08-26 | 1990-01-08 | Sony Corp | 垂直磁気記録媒体 |
JP2004217961A (ja) * | 2003-01-10 | 2004-08-05 | Kanagawa Acad Of Sci & Technol | 陽極酸化ポーラスアルミナ複合体及びその製造方法 |
JP2004527905A (ja) * | 2001-03-14 | 2004-09-09 | ユニバーシティー オブ マサチューセッツ | ナノ製造 |
JP2005052956A (ja) * | 2003-08-07 | 2005-03-03 | Canon Inc | ナノ構造体、及びその製造方法 |
JP2005183150A (ja) * | 2003-12-18 | 2005-07-07 | Nippon Oil Corp | ナノアレイ電極の製造方法およびそれを用いた光電変換素子 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US20050037374A1 (en) * | 1999-11-08 | 2005-02-17 | Melker Richard J. | Combined nanotechnology and sensor technologies for simultaneous diagnosis and treatment |
JP2004502554A (ja) * | 2000-03-22 | 2004-01-29 | ユニバーシティー オブ マサチューセッツ | ナノシリンダー・アレイ |
US6919119B2 (en) * | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
JP2002074936A (ja) * | 2000-08-31 | 2002-03-15 | Canon Inc | 磁気デバイス |
JP2002084018A (ja) * | 2000-09-08 | 2002-03-22 | Canon Inc | 磁気デバイス及びその製造方法、並びに固体磁気メモリ |
US20020145826A1 (en) * | 2001-04-09 | 2002-10-10 | University Of Alabama | Method for the preparation of nanometer scale particle arrays and the particle arrays prepared thereby |
JP4304947B2 (ja) * | 2002-09-26 | 2009-07-29 | 株式会社日立製作所 | 磁気記録媒体とそれを用いた磁気メモリ装置、磁気記録方法、信号再生方法 |
US7097886B2 (en) * | 2002-12-13 | 2006-08-29 | Applied Materials, Inc. | Deposition process for high aspect ratio trenches |
US20050277205A1 (en) * | 2004-02-20 | 2005-12-15 | Ki-Bum Lee | Multicomponent magnetic nanorods for biomolecular separations |
KR100646696B1 (ko) * | 2004-03-10 | 2006-11-23 | 주식회사 실트론 | 질화물 반도체 소자 및 그 제조방법 |
KR100664986B1 (ko) * | 2004-10-29 | 2007-01-09 | 삼성전기주식회사 | 나노로드를 이용한 질화물계 반도체 소자 및 그 제조 방법 |
-
2006
- 2006-05-11 DE DE102006021940A patent/DE102006021940A1/de not_active Withdrawn
-
2007
- 2007-04-28 JP JP2009508189A patent/JP2009536688A/ja active Pending
- 2007-04-28 AT AT07724719T patent/ATE514169T1/de active
- 2007-04-28 US US12/300,557 patent/US8337945B2/en not_active Expired - Fee Related
- 2007-04-28 EP EP07724719A patent/EP2016597B1/de not_active Not-in-force
- 2007-04-28 WO PCT/EP2007/003792 patent/WO2007131617A1/de active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH023102A (ja) * | 1987-08-26 | 1990-01-08 | Sony Corp | 垂直磁気記録媒体 |
JP2004527905A (ja) * | 2001-03-14 | 2004-09-09 | ユニバーシティー オブ マサチューセッツ | ナノ製造 |
JP2004217961A (ja) * | 2003-01-10 | 2004-08-05 | Kanagawa Acad Of Sci & Technol | 陽極酸化ポーラスアルミナ複合体及びその製造方法 |
JP2005052956A (ja) * | 2003-08-07 | 2005-03-03 | Canon Inc | ナノ構造体、及びその製造方法 |
JP2005183150A (ja) * | 2003-12-18 | 2005-07-07 | Nippon Oil Corp | ナノアレイ電極の製造方法およびそれを用いた光電変換素子 |
Also Published As
Publication number | Publication date |
---|---|
WO2007131617A1 (de) | 2007-11-22 |
US8337945B2 (en) | 2012-12-25 |
DE102006021940A1 (de) | 2007-11-22 |
US20090263595A1 (en) | 2009-10-22 |
EP2016597B1 (de) | 2011-06-22 |
EP2016597A1 (de) | 2009-01-21 |
ATE514169T1 (de) | 2011-07-15 |
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