JP2009521176A - Ｍｅｍｓ共振器、その製造方法、およびｍｅｍｓ発振器 - Google Patents

Ｍｅｍｓ共振器、その製造方法、およびｍｅｍｓ発振器 Download PDF

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JP2009521176A
JP2009521176A JP2008546790A JP2008546790A JP2009521176A JP 2009521176 A JP2009521176 A JP 2009521176A JP 2008546790 A JP2008546790 A JP 2008546790A JP 2008546790 A JP2008546790 A JP 2008546790A JP 2009521176 A JP2009521176 A JP 2009521176A
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movable element
young
modulus
temperature coefficient
mems resonator
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English (en)
Japanese (ja)
Inventor
ティー エム ファン ベーク ヨゼフ
ロイブル ハンス−ペテル
ダブリュー エム ヴァンヘルモント フレデリック
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NXP BV
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NXP BV
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02433—Means for compensation or elimination of undesired effects
    • H03H9/02448—Means for compensation or elimination of undesired effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2447—Beam resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2008546790A 2005-12-23 2006-12-18 Ｍｅｍｓ共振器、その製造方法、およびｍｅｍｓ発振器 Withdrawn JP2009521176A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05112938 2005-12-23
PCT/IB2006/054931 WO2007072409A2 (en) 2005-12-23 2006-12-18 A mems resonator, a method of manufacturing thereof, and a mems oscillator

Publications (1)

Publication Number Publication Date
JP2009521176A true JP2009521176A (ja) 2009-05-28

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JP2008546790A Withdrawn JP2009521176A (ja) 2005-12-23 2006-12-18 Ｍｅｍｓ共振器、その製造方法、およびｍｅｍｓ発振器

Country Status (5)

Country Link
US (2) US7847649B2 (zh)
EP (1) EP1974465B1 (zh)
JP (1) JP2009521176A (zh)
CN (1) CN101346879B (zh)
WO (1) WO2007072409A2 (zh)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011041282A (ja) * 2009-08-13 2011-02-24 Eta Sa Manufacture Horlogere Suisse 熱補償機械共振子
JP2011259426A (ja) * 2010-06-10 2011-12-22 Swatch Group Research & Development Ltd １次係数および２次係数の温度補償型共振子
JP2013506334A (ja) * 2009-09-28 2013-02-21 テクノロギアン トゥトキムスケスクス ヴェーテーテー マイクロメカニカル共振器
JP2013525743A (ja) * 2009-12-15 2013-06-20 ザ・スウォッチ・グループ・リサーチ・アンド・ディベロップメント・リミテッド 少なくとも１次と２次の温度補正が施された振動子
JP2014519260A (ja) * 2011-05-13 2014-08-07 テクノロジアン テュトキムスケスクス ヴェーテーテー 微小機械素子及びその設計方法
JP2015501591A (ja) * 2011-11-04 2015-01-15 ザ・スウォッチ・グループ・リサーチ・アンド・ディベロップメント・リミテッド セラミック温度補償型共振器
JPWO2014185280A1 (ja) * 2013-05-13 2017-02-23 株式会社村田製作所 振動装置

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7911010B2 (en) * 2006-07-17 2011-03-22 Kwj Engineering, Inc. Apparatus and method for microfabricated multi-dimensional sensors and sensing systems
US7639104B1 (en) * 2007-03-09 2009-12-29 Silicon Clocks, Inc. Method for temperature compensation in MEMS resonators with isolated regions of distinct material
US8426932B2 (en) 2007-07-17 2013-04-23 Kwj Engineering Inc. Apparatus and method for microfabricated multi-dimensional sensors and sensing systems
US8884382B2 (en) * 2007-07-17 2014-11-11 Kwj Engineering, Inc. Multi-Dimensional sensors and sensing systems
US8310016B2 (en) * 2007-07-17 2012-11-13 Kwj Engineering, Inc. Apparatus and method for microfabricated multi-dimensional sensors and sensing systems
JP5122888B2 (ja) * 2007-08-27 2013-01-16 セイコーインスツル株式会社 発振子、発振子の製造方法、及び発振器
JP4995675B2 (ja) * 2007-09-10 2012-08-08 セイコーインスツル株式会社 振動子デバイス及び発振器
US8234774B2 (en) 2007-12-21 2012-08-07 Sitime Corporation Method for fabricating a microelectromechanical system (MEMS) resonator
WO2009097167A2 (en) * 2008-01-05 2009-08-06 The Regents Of The University Of California Partially-filled electrode-to-resonator gap
JP2009190150A (ja) * 2008-02-18 2009-08-27 Sanyo Electric Co Ltd マイクロエレクトロメカニカルデバイス及びその製造方法。
JP5316748B2 (ja) * 2008-03-28 2013-10-16 セイコーエプソン株式会社 振動片の製造方法
US7990229B2 (en) 2008-04-01 2011-08-02 Sand9, Inc. Methods and devices for compensating a signal using resonators
US8044736B2 (en) 2008-04-29 2011-10-25 Sand9, Inc. Timing oscillators and related methods
US8044737B2 (en) 2008-04-29 2011-10-25 Sand9, Inc. Timing oscillators and related methods
US8476809B2 (en) 2008-04-29 2013-07-02 Sand 9, Inc. Microelectromechanical systems (MEMS) resonators and related apparatus and methods
US8410868B2 (en) 2009-06-04 2013-04-02 Sand 9, Inc. Methods and apparatus for temperature control of devices and mechanical resonating structures
JP5561959B2 (ja) * 2008-06-25 2014-07-30 セイコーインスツル株式会社 静電振動子及び電子機器
FR2933824B1 (fr) * 2008-07-11 2010-08-13 St Microelectronics Sa Resonateur a ondes de volume
US8111108B2 (en) 2008-07-29 2012-02-07 Sand9, Inc. Micromechanical resonating devices and related methods
US7999635B1 (en) * 2008-07-29 2011-08-16 Silicon Laboratories Inc. Out-of plane MEMS resonator with static out-of-plane deflection
US7888843B2 (en) 2008-09-10 2011-02-15 Georgia Tech Research Corporation Thin-film piezoelectric-on-insulator resonators having perforated resonator bodies therein
US8689426B2 (en) 2008-12-17 2014-04-08 Sand 9, Inc. Method of manufacturing a resonating structure
WO2010077311A1 (en) 2008-12-17 2010-07-08 Sand9, Inc. Multi-port mechanical resonating devices and related methods
EP2377176B1 (en) 2008-12-17 2016-12-14 Analog Devices, Inc. Mechanical resonating structures including a temperature compensation structure
US8040207B2 (en) 2009-01-15 2011-10-18 Infineon Technologies Ag MEMS resonator devices with a plurality of mass elements formed thereon
US7939990B2 (en) 2009-01-30 2011-05-10 Integrated Device Technology, Inc. Thin-film bulk acoustic resonators having perforated bodies that provide reduced susceptibility to process-induced lateral dimension variations
US9048811B2 (en) 2009-03-31 2015-06-02 Sand 9, Inc. Integration of piezoelectric materials with substrates
US8158448B2 (en) * 2009-04-27 2012-04-17 The Boeing Company Resonator and methods of making resonators
FR2946478A1 (fr) * 2009-06-08 2010-12-10 St Microelectronics Sa Resonateur a ondes de volume.
FR2946971B1 (fr) * 2009-06-18 2011-07-15 Commissariat Energie Atomique Procede d'excitation d'un element mobile d'une microstructure
US8106724B1 (en) 2009-07-23 2012-01-31 Integrated Device Technologies, Inc. Thin-film bulk acoustic resonators having perforated resonator body supports that enhance quality factor
EP2302792B1 (en) 2009-09-22 2012-11-14 Nxp B.V. Resonator
EP2339748B1 (en) * 2009-09-28 2018-12-19 Nxp B.V. Resonator
JP5471303B2 (ja) 2009-10-27 2014-04-16 セイコーエプソン株式会社 振動片及び振動子
US8736388B2 (en) 2009-12-23 2014-05-27 Sand 9, Inc. Oscillators having arbitrary frequencies and related systems and methods
WO2011109382A1 (en) 2010-03-01 2011-09-09 Sand9, Inc. Microelectromechanical gyroscopes and related apparatus and methods
US8833161B2 (en) 2010-04-20 2014-09-16 Sand 9, Inc. Microelectromechanical gyroscopes and related apparatus and methods
EP2403139A1 (en) * 2010-07-02 2012-01-04 Nxp B.V. Resonator
WO2012040043A1 (en) 2010-09-20 2012-03-29 Sand9, Inc. Resonant sensing using extensional modes of a plate
FR2966305B1 (fr) 2010-10-15 2013-07-12 Commissariat Energie Atomique Structure acoustique heterogene formee a partir d'un materiau homogene
US8501515B1 (en) 2011-02-25 2013-08-06 Integrated Device Technology Inc. Methods of forming micro-electromechanical resonators using passive compensation techniques
EP2512031B1 (en) * 2011-04-15 2015-10-07 Nxp B.V. MEMS resonator and method of controlling the same
US8643140B2 (en) * 2011-07-11 2014-02-04 United Microelectronics Corp. Suspended beam for use in MEMS device
US9431993B1 (en) * 2011-09-26 2016-08-30 Micrel, Incorporated Temperature compensated resonator with a pair of spaced apart internal dielectric layers
US8610336B1 (en) 2011-09-30 2013-12-17 Integrated Device Technology Inc Microelectromechanical resonators having resistive heating elements therein configured to provide frequency tuning through convective heating of resonator bodies
US9383208B2 (en) 2011-10-13 2016-07-05 Analog Devices, Inc. Electromechanical magnetometer and applications thereof
US8593230B2 (en) 2011-10-14 2013-11-26 Nxp, B.V. Circuit and method for correcting temperature dependence of frequency for piezoresistive oscillators
US9000833B2 (en) * 2013-03-06 2015-04-07 Silicon Laboratories Inc. Compensation of changes in MEMS capacitive transduction
TWI522307B (zh) 2013-03-25 2016-02-21 財團法人工業技術研究院 複合材料的微機電裝置與其製作方法
US9702769B2 (en) 2013-06-11 2017-07-11 Intel Corporation Self-calibrated thermal sensors of an integrated circuit die
US9489000B2 (en) 2013-09-30 2016-11-08 Silicon Laboratories Inc. Use of a thermistor within a reference signal generator
US10254176B2 (en) 2014-04-07 2019-04-09 Silicon Laboratories Inc. Strain-insensitive temperature sensor
US9804046B2 (en) * 2015-10-27 2017-10-31 DunAn Sensing, LLC Pressure sensor with support structure for non-silicon diaphragm
US10800649B2 (en) 2016-11-28 2020-10-13 Analog Devices International Unlimited Company Planar processing of suspended microelectromechanical systems (MEMS) devices
US9989927B1 (en) 2016-11-30 2018-06-05 Silicon Laboratories Inc. Resistance-to-frequency converter
WO2018182657A1 (en) * 2017-03-30 2018-10-04 Intel Corporation Compensation for temperature coefficient of resonant frequency using atomic layer deposition materials
US10843920B2 (en) 2019-03-08 2020-11-24 Analog Devices International Unlimited Company Suspended microelectromechanical system (MEMS) devices
WO2021141636A1 (en) * 2020-01-08 2021-07-15 Invensense, Inc. Method and system for sensor configuration

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198390A (en) 1992-01-16 1993-03-30 Cornell Research Foundation, Inc. RIE process for fabricating submicron, silicon electromechanical structures
US5349855A (en) 1992-04-07 1994-09-27 The Charles Stark Draper Laboratory, Inc. Comb drive micromechanical tuning fork gyro
US6557419B1 (en) 1996-12-31 2003-05-06 Honeywell International Inc. Zero TCF thin film resonator
US5963857A (en) * 1998-01-20 1999-10-05 Lucent Technologies, Inc. Article comprising a micro-machined filter
ES2226770T3 (es) * 1999-01-22 2005-04-01 Multigig Limited Circuito electronico.
US6739190B2 (en) * 2000-08-24 2004-05-25 The Regents Of The University Of Michigan Micromechanical resonator device
US6958566B2 (en) * 2001-08-16 2005-10-25 The Regents Of The University Of Michigan Mechanical resonator device having phenomena-dependent electrical stiffness
JP4168757B2 (ja) 2002-02-01 2008-10-22 松下電器産業株式会社 フィルタ
US6621134B1 (en) * 2002-02-07 2003-09-16 Shayne Zurn Vacuum sealed RF/microwave microresonator
US7023065B2 (en) * 2002-08-07 2006-04-04 Georgia Tech Research Corporation Capacitive resonators and methods of fabrication
US6987432B2 (en) 2003-04-16 2006-01-17 Robert Bosch Gmbh Temperature compensation for silicon MEMS resonator
KR20060119957A (ko) 2003-09-10 2006-11-24 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 전기기계 변환기 및 전기 장치
US7056757B2 (en) 2003-11-25 2006-06-06 Georgia Tech Research Corporation Methods of forming oxide masks with submicron openings and microstructures formed thereby
EP1548935A1 (en) * 2003-12-24 2005-06-29 Interuniversitair Microelektronica Centrum Vzw Micromachined film bulk acoustic resonator
WO2006098743A2 (en) 2004-06-04 2006-09-21 The Regents Of The University Of California Internal electrostatic transduction structures for bulk-mode micromechanical resonators
US7551043B2 (en) * 2005-08-29 2009-06-23 The Regents Of The University Of Michigan Micromechanical structures having a capacitive transducer gap filled with a dielectric and method of making same
US7863069B2 (en) * 2005-09-27 2011-01-04 Analog Devices, Inc. Method of forming an integrated MEMS resonator

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011041282A (ja) * 2009-08-13 2011-02-24 Eta Sa Manufacture Horlogere Suisse 熱補償機械共振子
JP2013506334A (ja) * 2009-09-28 2013-02-21 テクノロギアン トゥトキムスケスクス ヴェーテーテー マイクロメカニカル共振器
JP2013525743A (ja) * 2009-12-15 2013-06-20 ザ・スウォッチ・グループ・リサーチ・アンド・ディベロップメント・リミテッド 少なくとも１次と２次の温度補正が施された振動子
JP2011259426A (ja) * 2010-06-10 2011-12-22 Swatch Group Research & Development Ltd １次係数および２次係数の温度補償型共振子
JP2014519260A (ja) * 2011-05-13 2014-08-07 テクノロジアン テュトキムスケスクス ヴェーテーテー 微小機械素子及びその設計方法
JP2015501591A (ja) * 2011-11-04 2015-01-15 ザ・スウォッチ・グループ・リサーチ・アンド・ディベロップメント・リミテッド セラミック温度補償型共振器
JP2016191711A (ja) * 2011-11-04 2016-11-10 ザ・スウォッチ・グループ・リサーチ・アンド・ディベロップメント・リミテッド セラミック温度補償型共振器
JPWO2014185280A1 (ja) * 2013-05-13 2017-02-23 株式会社村田製作所 振動装置

Also Published As

Publication number Publication date
EP1974465B1 (en) 2015-04-15
WO2007072409A2 (en) 2007-06-28
WO2007072409A3 (en) 2007-10-18
US20090121808A1 (en) 2009-05-14
US7847649B2 (en) 2010-12-07
US20090219104A1 (en) 2009-09-03
CN101346879A (zh) 2009-01-14
US8058952B2 (en) 2011-11-15
CN101346879B (zh) 2012-12-05
EP1974465A2 (en) 2008-10-01

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