JP2009512210A - Memsチューナブルデバイス - Google Patents
Memsチューナブルデバイス Download PDFInfo
- Publication number
- JP2009512210A JP2009512210A JP2008535164A JP2008535164A JP2009512210A JP 2009512210 A JP2009512210 A JP 2009512210A JP 2008535164 A JP2008535164 A JP 2008535164A JP 2008535164 A JP2008535164 A JP 2008535164A JP 2009512210 A JP2009512210 A JP 2009512210A
- Authority
- JP
- Japan
- Prior art keywords
- movable element
- substrate
- voltage
- level
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000007423 decrease Effects 0.000 claims abstract description 4
- 230000008859 change Effects 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000013459 approach Methods 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 claims 1
- 238000013016 damping Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 description 8
- 230000004044 response Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000003044 adaptive effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
- Pressure Sensors (AREA)
Abstract
Description
・マイクロフォン又はラウドスピーカ(特定のタイプの振動版を使用する)
・センサ、特に空気圧力センサ
・共振器
・ディスプレイ内の画素スイッチ又は光スイッチ用のミラードライバ
・RFアプリケーションにおけるスイッチ又は可変容量
である。
1.シリコンのような半導体基板内のMEMS構造。この場合には、電極は基板に直角に配向される。この構造はセンサ用及び共振器用に使用できるが、他のアプリケーションも除外されない。
・ダブルクランプ(両持ち)ビーム、即ち弾性結合を構成するように基板表面に2つ以上の辺で連結されたビームで、基板方向の変位がビーム中心部に生じる。
シングルクランプ(片持ち)ビームで、基板方向の変位がビームの端部に生じる。
・ マイクロホン又はラウドスピーカ(特定のタイプの振動板を用いる)
・ センサ、特に空気圧センサ
・ 共振器
・ ディスプレイ内の画素スイッチ又は光スイッチのミラードライバ
・ RFアプリケーションにおけるスイッチ又は可変容量
に適用できる。
Claims (12)
- 基板と、可動素子と、前記基板及び前記可動素子上に配置され協働して前記可動素子を前記基板と相対的に移動させる1対の電極と、前記可動素子を最大及び最小位置間の中間位置に移動させるために前記電極に電力を供給するコントローラとを具え、前記コントローラは、前記可動素子を前記中間位置に保持するのに必要とされる第2のレベルより高い第1のレベルを有し、その後前記可動素子を前記中間位置に安定化させるために前記第2のレベルに減少する少なくとも1つのパルスを供給することを特徴とするマイクロエレクトロメカニカルデバイス。
- 前記少なくとも1つのパルスは、前記移動が前記電極間の空隙を減少させるのか増大させるのかに依存することを特徴とする請求項1記載のマイクロエレクトロメカニカルデバイス。
- 前記コントローラは、静電力を変化させるために前記電極間の電圧差を制御するように構成されていることを特徴とする請求項1又は2記載のマイクロエレクトロメカニカルデバイス。
- 前記電極間の空隙の増大を制御するために、前記コントローラは最大供給レベルの単一パルスを供給するように構成されていることを特徴とする請求項1〜3の何れかに記載のマイクロエレクトロメカニカルデバイス。
- 前記単一パルスの持続時間は、移動の前と後の供給レベルに依存することを特徴とする請求項4記載のマイクロエレクトロメカニカルデバイス。
- 前記電極間の空隙の増大を制御するために、前記コントローラは前記可動素子の振動を減衰させるようにタイミング制御されたパルス列を供給するように構成されていることを特徴とする請求項1〜5の何れかに記載のマイクロエレクトロメカニカルデバイス。
- 前記パルス列は前記移動の前と後の供給レベルに依存することを特徴とする請求項6記載のマイクロエレクトロメカニカルデバイス。
- 前記パルス列は、共振周波数に対応する周期を有し且つ所定の供給レベルの上下に複数のピークと谷を具え、連続するピークと谷が所定の供給レベルに近づくように構成されることを特徴とする請求項6又は7記載のマイクロエレクトロメカニカルデバイス。
- チューナブルキャパシタを構成するために前記基板及び前記可動素子上にキャパシタ電極を有することを特徴とする請求項1〜8の何れかに記載のマイクロエレクトロメカニカルデバイス。
- 前記可動素子をバイアスするために弾性結合を有することを特徴とする請求項1〜9の何れかに記載のマイクロエレクトロメカニカルデバイス。
- 前記弾性結合は前記可動素子の少なくとも2辺に配置されていることを特徴とする請求項10記載のマイクロエレクトロメカニカルデバイス。
- 基板と、可動素子と、前記基板及び前記可動素子上に配置され、協働して前記可動素子を前記基板と相対的に移動させる1対の電極とを有するマイクロエレクトロメカニカルデバイスの可動素子を制御する方法であって、移動時に前記可動素子を中間位置に保持するのに必要とされる第2のレベルより高い第1のレベルを有し、その後前記可動素子を前記中間位置に安定化させるために前記第2のレベルに減少する少なくとも1つのパルスを前記電極に供給することによって前記可動素子を前記中間位置に移動させるステップを具えることを特徴とするマイクロエレクトロメカニカルデバイスの可動素子の制御方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05109574 | 2005-10-14 | ||
EP05109574.3 | 2005-10-14 | ||
PCT/IB2006/053711 WO2007043006A2 (en) | 2005-10-14 | 2006-10-10 | Mems tunable device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009512210A true JP2009512210A (ja) | 2009-03-19 |
JP4990286B2 JP4990286B2 (ja) | 2012-08-01 |
Family
ID=37943198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008535164A Expired - Fee Related JP4990286B2 (ja) | 2005-10-14 | 2006-10-10 | Memsチューナブルデバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US8027143B2 (ja) |
EP (1) | EP1938345B1 (ja) |
JP (1) | JP4990286B2 (ja) |
CN (1) | CN101288137A (ja) |
AT (1) | ATE425544T1 (ja) |
DE (1) | DE602006005698D1 (ja) |
WO (1) | WO2007043006A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10215566B2 (en) | 2015-09-15 | 2019-02-26 | Seiko Epson Corporation | Oscillator, electronic device, and moving object |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010021252A (ja) * | 2008-07-09 | 2010-01-28 | Murata Mfg Co Ltd | 可変容量素子およびその製造方法 |
JP2010199214A (ja) * | 2009-02-24 | 2010-09-09 | Oki Semiconductor Co Ltd | Memsチューナブルキャパシタ |
DE102010014101B4 (de) | 2010-04-07 | 2016-06-09 | Epcos Ag | Hybridschaltung mit einstellbarer Impedanz |
WO2012037537A2 (en) | 2010-09-18 | 2012-03-22 | Fairchild Semiconductor Corporation | Sealed packaging for microelectromechanical systems |
EP2616822B1 (en) | 2010-09-18 | 2015-07-01 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
US8927311B2 (en) * | 2011-02-16 | 2015-01-06 | Freescale Semiconductor, Inc. | MEMS device having variable gap width and method of manufacture |
US8294184B2 (en) | 2011-02-23 | 2012-10-23 | Qualcomm Mems Technologies, Inc. | EMS tunable transistor |
US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
US9488693B2 (en) * | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
KR102058489B1 (ko) | 2012-04-05 | 2019-12-23 | 페어차일드 세미컨덕터 코포레이션 | 멤스 장치 프론트 엔드 전하 증폭기 |
EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
US10183857B2 (en) * | 2012-08-21 | 2019-01-22 | Robert Bosch Gmbh | MEMS pressure sensor with multiple membrane electrodes |
DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
WO2014186656A1 (en) * | 2013-05-17 | 2014-11-20 | Cavendish Kinetics, Inc | Method and technique to control mems dvc control waveform for lifetime enhancement |
US10165342B2 (en) * | 2014-05-12 | 2018-12-25 | Tdk Corporation | Microphone assembly and method of manufacturing a microphone assembly |
US10454019B2 (en) * | 2016-09-29 | 2019-10-22 | The Boeing Company | Anisotropic piezoelectric device, system, and method |
US10239746B2 (en) * | 2016-11-11 | 2019-03-26 | Analog Devices, Inc. | Vertical stopper for capping MEMS devices |
CN108249381B (zh) * | 2016-12-29 | 2020-03-17 | 财团法人工业技术研究院 | 具冲击吸收器的微机电装置 |
CN107437483A (zh) * | 2017-07-24 | 2017-12-05 | 中北大学 | 一种直板型单刀单掷开关单片集成衰减器 |
CN110632753B (zh) * | 2018-06-21 | 2021-10-01 | 华为技术有限公司 | 阶跃驱动信号控制方法和装置 |
CN109243912A (zh) * | 2018-09-13 | 2019-01-18 | 中国工程物理研究院电子工程研究所 | 一种基于三段式双稳态梁结构的mems惯性开关 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08247767A (ja) * | 1995-03-08 | 1996-09-27 | Nippondenso Co Ltd | 角速度センサ |
JPH10335675A (ja) * | 1997-05-30 | 1998-12-18 | Aisin Seiki Co Ltd | 半導体マイクロマシン |
JP2002036197A (ja) * | 2000-04-13 | 2002-02-05 | Nokia Mobile Phones Ltd | マイクロマシン素子を制御するための方法および装置 |
JP2002178516A (ja) * | 2000-12-14 | 2002-06-26 | Ricoh Co Ltd | 静電アクチュエータの駆動方法および該駆動方法を適用したインクジェット記録装置 |
JP2004172504A (ja) * | 2002-11-21 | 2004-06-17 | Fujitsu Media Device Kk | 可変キャパシタ、それを備えたパッケージ及び可変キャパシタの製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6362018B1 (en) * | 2000-02-02 | 2002-03-26 | Motorola, Inc. | Method for fabricating MEMS variable capacitor with stabilized electrostatic drive |
US6418006B1 (en) * | 2000-12-20 | 2002-07-09 | The Board Of Trustees Of The University Of Illinois | Wide tuning range variable MEMs capacitor |
GB0214206D0 (en) | 2002-06-19 | 2002-07-31 | Filtronic Compound Semiconduct | A micro-electromechanical variable capacitor |
US6829132B2 (en) | 2003-04-30 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Charge control of micro-electromechanical device |
US7657242B2 (en) * | 2004-09-27 | 2010-02-02 | Qualcomm Mems Technologies, Inc. | Selectable capacitance circuit |
CN1769945A (zh) * | 2004-09-30 | 2006-05-10 | 富士胶片株式会社 | 微型机电式调制元件和微型机电式调制元件阵列 |
-
2006
- 2006-10-10 US US12/090,004 patent/US8027143B2/en active Active
- 2006-10-10 WO PCT/IB2006/053711 patent/WO2007043006A2/en active Application Filing
- 2006-10-10 JP JP2008535164A patent/JP4990286B2/ja not_active Expired - Fee Related
- 2006-10-10 CN CNA2006800380146A patent/CN101288137A/zh active Pending
- 2006-10-10 AT AT06809552T patent/ATE425544T1/de not_active IP Right Cessation
- 2006-10-10 DE DE602006005698T patent/DE602006005698D1/de active Active
- 2006-10-10 EP EP06809552A patent/EP1938345B1/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08247767A (ja) * | 1995-03-08 | 1996-09-27 | Nippondenso Co Ltd | 角速度センサ |
JPH10335675A (ja) * | 1997-05-30 | 1998-12-18 | Aisin Seiki Co Ltd | 半導体マイクロマシン |
JP2002036197A (ja) * | 2000-04-13 | 2002-02-05 | Nokia Mobile Phones Ltd | マイクロマシン素子を制御するための方法および装置 |
JP2002178516A (ja) * | 2000-12-14 | 2002-06-26 | Ricoh Co Ltd | 静電アクチュエータの駆動方法および該駆動方法を適用したインクジェット記録装置 |
JP2004172504A (ja) * | 2002-11-21 | 2004-06-17 | Fujitsu Media Device Kk | 可変キャパシタ、それを備えたパッケージ及び可変キャパシタの製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10215566B2 (en) | 2015-09-15 | 2019-02-26 | Seiko Epson Corporation | Oscillator, electronic device, and moving object |
Also Published As
Publication number | Publication date |
---|---|
EP1938345A2 (en) | 2008-07-02 |
JP4990286B2 (ja) | 2012-08-01 |
DE602006005698D1 (de) | 2009-04-23 |
EP1938345B1 (en) | 2009-03-11 |
ATE425544T1 (de) | 2009-03-15 |
US20080253057A1 (en) | 2008-10-16 |
CN101288137A (zh) | 2008-10-15 |
US8027143B2 (en) | 2011-09-27 |
WO2007043006A2 (en) | 2007-04-19 |
WO2007043006A3 (en) | 2007-09-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4990286B2 (ja) | Memsチューナブルデバイス | |
US8194386B2 (en) | Arrangement of MEMS devices having series coupled capacitors | |
TWI231511B (en) | Variable capacitance membrane actuator for wide band tuning of microstrip resonators and filters | |
Seeger et al. | Charge control of parallel-plate, electrostatic actuators and the tip-in instability | |
JP4555951B2 (ja) | MEMS(Micro−Electro−Mechanical−System)素子のアレイの駆動 | |
EP1831996B1 (en) | Charge-biased mem resonator | |
US9418794B2 (en) | MEMS variable capacitor | |
JP4919819B2 (ja) | マイクロマシンデバイスの駆動制御方法および装置 | |
WO2004047190A3 (en) | Micro electro-mechanical system device with piezoelectric thin film actuator | |
WO2010011288A1 (en) | Switching devices and related methods | |
Imboden et al. | High-speed control of electromechanical transduction: Advanced drive techniques for optimized step-and-settle response of MEMS micromirrors | |
US7750419B2 (en) | Tuneable electronic devices and electronic arrangements comprising such tuneable devices | |
US6744338B2 (en) | Resonant operation of MEMS switch | |
KR101104603B1 (ko) | 멤즈 가변 캐패시터 및 그의 구동 방법 | |
KR102669193B1 (ko) | 광학 필터 시스템 | |
JP2007175577A (ja) | Mems振動子 | |
JP5028646B2 (ja) | 小型発振子 | |
US9166271B2 (en) | Tunable cavity resonator including a plurality of MEMS beams | |
Van Spengen et al. | The MEMSamp: using (RF-) MEMS switches for the micromechanical amplification of electronic signals | |
De Coster et al. | Variable RF MEMS capacitors with extended tuning range | |
Van Toan et al. | Capacitive silicon resonator structure with movable electrodes to reduce capacitive gap widths based on electrostatic parallel plate actuation | |
US6965274B2 (en) | Thin film bulk acoustic resonator for controlling resonance frequency and voltage controlled oscillator using the same | |
He et al. | A novel mems tunable capacitor | |
Mita et al. | Frequency transition phenomenon of self-oscillated micro-cantilever by changing driving voltage | |
EP2507804B1 (en) | Variable capacitor and method for driving the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100831 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20101112 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101130 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110322 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110622 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20111011 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120131 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120403 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120501 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4990286 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150511 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |