JP2009267419A - 熱界面材料の製造方法 - Google Patents
熱界面材料の製造方法 Download PDFInfo
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- JP2009267419A JP2009267419A JP2009107889A JP2009107889A JP2009267419A JP 2009267419 A JP2009267419 A JP 2009267419A JP 2009107889 A JP2009107889 A JP 2009107889A JP 2009107889 A JP2009107889 A JP 2009107889A JP 2009267419 A JP2009267419 A JP 2009267419A
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- Prior art keywords
- metal
- carbon nanotube
- nanotube array
- thermal interface
- interface material
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- 239000000463 material Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 66
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 230000005540 biological transmission Effects 0.000 claims description 14
- 230000008018 melting Effects 0.000 description 13
- 238000002844 melting Methods 0.000 description 13
- 239000010410 layer Substances 0.000 description 10
- 239000007769 metal material Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
- C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
【解決手段】本発明の熱界面材料の製造方法は、基板にカーボンナノチューブアレイを成長させる第一ステップと、前記カーボンナノチューブアレイの一つの表面に少なくとも一種の金属を堆積させる第二ステップと、前記カーボンナノチューブアレイ及び前記少なくとも一種の金属を加熱させて、前記金属を溶かす第三ステップと、を含む。前記第二ステップにおいては、伝送装置を利用して、前記カーボンナノチューブアレイの一側から前記カーボンナノチューブアレイに少なくとも一種の金属を堆積させる。
【選択図】図1
Description
12 基板
100 伝送装置
102 伝送板
104 金属
106 中空部
108 孔
110 密封部
112 隙間
114 加熱炉
Claims (4)
- 基板にカーボンナノチューブアレイを成長させる第一ステップと、
前記カーボンナノチューブアレイの一つの表面に少なくとも一種の金属を堆積させる第二ステップと、
前記カーボンナノチューブアレイ及び前記少なくとも一種の金属を加熱させて、前記金属を溶かす第三ステップと、
を含むことを特徴とする熱界面材料の製造方法。 - 前記第二ステップにおいて、伝送装置を利用して、前記カーボンナノチューブアレイの一側から前記カーボンナノチューブアレイに前記少なくとも一種の金属を堆積させることを特徴とする、請求項1に記載の熱界面材料の製造方法。
- 前記第三ステップにおいて、前記カーボンナノチューブアレイ及び前記少なくとも一種の金属を加熱炉において加熱させることを特徴とする、請求項1に記載の熱界面材料の製造方法。
- 前記第三ステップにおいて、前記加熱炉の中を真空化させ、前記カーボンナノチューブアレイ及び前記金属における空気を排出することを特徴とする、請求項1に記載の熱界面材料の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/110,549 | 2008-04-28 | ||
US12/110,549 US7947331B2 (en) | 2008-04-28 | 2008-04-28 | Method for making thermal interface material |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009267419A true JP2009267419A (ja) | 2009-11-12 |
JP5441486B2 JP5441486B2 (ja) | 2014-03-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009107889A Active JP5441486B2 (ja) | 2008-04-28 | 2009-04-27 | 熱界面材料の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7947331B2 (ja) |
JP (1) | JP5441486B2 (ja) |
CN (1) | CN101572255B (ja) |
TW (1) | TWI394826B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2455043A1 (en) * | 2004-01-09 | 2005-07-09 | Digital Multitools Inc. | Method and apparatus for facilitating control of a target computer by a remote computer |
KR101458846B1 (ko) | 2004-11-09 | 2014-11-07 | 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 | 나노섬유 리본과 시트 및 트위스팅 및 논-트위스팅 나노섬유 방적사의 제조 및 애플리케이션 |
CN101899288B (zh) * | 2009-05-27 | 2012-11-21 | 清华大学 | 热界面材料及其制备方法 |
JP5374354B2 (ja) * | 2009-12-25 | 2013-12-25 | 日東電工株式会社 | カーボンナノチューブ複合構造体および粘着部材 |
CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
US20120175755A1 (en) * | 2011-01-12 | 2012-07-12 | Infineon Technologies Ag | Semiconductor device including a heat spreader |
US9903350B2 (en) | 2012-08-01 | 2018-02-27 | The Board Of Regents, The University Of Texas System | Coiled and non-coiled twisted polymer fiber torsional and tensile actuators |
CN103094125A (zh) * | 2013-01-16 | 2013-05-08 | 电子科技大学 | 一种碳纳米管散热结构与电子器件的集成方法 |
TWI449661B (zh) * | 2013-03-29 | 2014-08-21 | Taiwan Carbon Nanotube Technology Corp | Fabrication method of metal - based nanometer carbon nanotubes composite |
US9994741B2 (en) | 2015-12-13 | 2018-06-12 | International Business Machines Corporation | Enhanced adhesive materials and processes for 3D applications |
CN106337215A (zh) * | 2016-06-06 | 2017-01-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 碳纳米管复合纤维及其制备方法 |
CN108251063B (zh) * | 2016-12-28 | 2021-05-11 | 有研工程技术研究院有限公司 | 一种高性能复合相变材料及其制备方法 |
CN110143585B (zh) * | 2018-02-11 | 2021-03-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种铜填充碳纳米管阵列基复合材料及其制备方法 |
CN109607470B (zh) * | 2018-11-19 | 2020-06-19 | 南京理工大学 | 锑烯纳米片的制备方法 |
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JP2002141633A (ja) * | 2000-10-25 | 2002-05-17 | Lucent Technol Inc | 垂直にナノ相互接続された回路デバイスからなる製品及びその製造方法 |
US20060231946A1 (en) * | 2005-04-14 | 2006-10-19 | Molecular Nanosystems, Inc. | Nanotube surface coatings for improved wettability |
JP2007154262A (ja) * | 2005-12-06 | 2007-06-21 | Sumitomo Electric Ind Ltd | 複合基板及びその製造方法、並びに電極及び電解装置 |
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WO2008035742A1 (fr) * | 2006-09-22 | 2008-03-27 | International Business Machines Corporation | Structure d'interface thermique et procédé de fabrication de celle-ci |
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US4220455A (en) * | 1978-10-24 | 1980-09-02 | General Electric Company | Polycrystalline diamond and/or cubic boron nitride body and process for making said body |
JPH1129379A (ja) * | 1997-02-14 | 1999-02-02 | Ngk Insulators Ltd | 半導体ヒートシンク用複合材料及びその製造方法 |
TWI331132B (en) * | 2005-07-01 | 2010-10-01 | Hon Hai Prec Ind Co Ltd | Method of fabricating thermal interface material |
CN1804099A (zh) * | 2005-12-28 | 2006-07-19 | 哈尔滨工业大学 | 碳纳米管金属基复合材料及其制备方法 |
-
2008
- 2008-04-28 US US12/110,549 patent/US7947331B2/en active Active
-
2009
- 2009-03-06 CN CN200910127345.2A patent/CN101572255B/zh active Active
- 2009-03-20 TW TW098109063A patent/TWI394826B/zh active
- 2009-04-27 JP JP2009107889A patent/JP5441486B2/ja active Active
Patent Citations (5)
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JP2002141633A (ja) * | 2000-10-25 | 2002-05-17 | Lucent Technol Inc | 垂直にナノ相互接続された回路デバイスからなる製品及びその製造方法 |
JP2007532335A (ja) * | 2004-04-13 | 2007-11-15 | ユナイテッド ステイツ オブ アメリカ アズ リプリゼンティッド バイ ザ アドミニストレイター オブ ザ ナサ | カーボンナノチューブ・アレイ複合材料をベースにするナノ加工熱材料 |
US20060231946A1 (en) * | 2005-04-14 | 2006-10-19 | Molecular Nanosystems, Inc. | Nanotube surface coatings for improved wettability |
JP2007154262A (ja) * | 2005-12-06 | 2007-06-21 | Sumitomo Electric Ind Ltd | 複合基板及びその製造方法、並びに電極及び電解装置 |
WO2008035742A1 (fr) * | 2006-09-22 | 2008-03-27 | International Business Machines Corporation | Structure d'interface thermique et procédé de fabrication de celle-ci |
Also Published As
Publication number | Publication date |
---|---|
US20090269498A1 (en) | 2009-10-29 |
CN101572255B (zh) | 2011-01-05 |
JP5441486B2 (ja) | 2014-03-12 |
TW200944584A (en) | 2009-11-01 |
CN101572255A (zh) | 2009-11-04 |
US7947331B2 (en) | 2011-05-24 |
TWI394826B (zh) | 2013-05-01 |
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