JP2009239056A - 熱処理装置および処理システム - Google Patents
熱処理装置および処理システム Download PDFInfo
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- JP2009239056A JP2009239056A JP2008083882A JP2008083882A JP2009239056A JP 2009239056 A JP2009239056 A JP 2009239056A JP 2008083882 A JP2008083882 A JP 2008083882A JP 2008083882 A JP2008083882 A JP 2008083882A JP 2009239056 A JP2009239056 A JP 2009239056A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims description 167
- 239000007789 gas Substances 0.000 claims description 106
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 41
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 40
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 40
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 39
- 239000007795 chemical reaction product Substances 0.000 claims description 32
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 28
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 230000001131 transforming effect Effects 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 238000011109 contamination Methods 0.000 abstract description 13
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 description 148
- 238000000034 method Methods 0.000 description 54
- 230000008569 process Effects 0.000 description 45
- 238000012546 transfer Methods 0.000 description 42
- 229910004298 SiO 2 Inorganic materials 0.000 description 39
- 239000010410 layer Substances 0.000 description 35
- 230000007246 mechanism Effects 0.000 description 34
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 28
- 238000005530 etching Methods 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 229910001873 dinitrogen Inorganic materials 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 229910052786 argon Inorganic materials 0.000 description 14
- 230000001965 increasing effect Effects 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 229920006395 saturated elastomer Polymers 0.000 description 7
- 210000000078 claw Anatomy 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- -1 ammonium fluorosilicate Chemical compound 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000004075 alteration Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】シリコン基板Wを熱処理する熱処理装置4であって、シリコン基板Wを載置させて加熱する載置台23を備え、載置台23の上面に、シリコン、炭化シリコン、窒化アルミニウムのいずれかからなるカバー35を配置した。載置台23の上面をシリコン等のカバー35で覆うことにより、シリコン基板W下面の金属汚染を抑制する。
【選択図】図4
Description
GAS FREE)処理することも試みた。しかしながら、ウェハ下面の金属汚染を十分に抑制することができなかった。
1 処理システム
4 PHT処理装置
5 COR処理装置
8 制御コンピュータ
20 チャンバー
21 処理空間
23 載置台
26 ガス供給機構
28 排気機構
35 カバー
36 ウェハ昇降機構
40、41 支持ピン
42 凹部
43 ヒータ
Claims (6)
- シリコン基板を熱処理する熱処理装置であって、
シリコン基板を載置させて加熱する載置台を備え、
前記載置台の上面に、シリコン、炭化シリコン、窒化アルミニウムのいずれかからなるカバーを配置したことを特徴とする、熱処理装置。 - 前記カバーは円板形状であり、前記載置台上に載置される円板形状のシリコン基板よりも大きい直径を有することを特徴とする、請求項1に記載の熱処理装置。
- 前記カバーの上面に、シリコン基板の下面を支持する複数の支持ピンが設けられていることを特徴とする、請求項1または2に記載の熱処理装置。
- 前記カバーの下面に、前記載置台の上面に設けられた複数の支持ピンを受容するための凹部が設けられていることを特徴とする、請求項1〜3のいずれかに記載の熱処理装置。
- シリコン基板の上面には、フッ化水素ガスおよびアンモニアガスを含む混合ガスとの化学反応によりシリコン酸化膜を変質させた反応生成物膜が形成されていることを特徴とする、請求項1〜4のいずれかに記載の熱処理装置。
- シリコン基板の上面に形成されたシリコン酸化膜を除去する処理システムであって、
シリコン基板の上面にフッ化水素ガスおよびアンモニアガスを含む混合ガスを供給することにより、シリコン基板の上面に形成されたシリコン酸化膜を反応生成物膜に変質させるCOR処理装置と、請求項1〜5のいずれかに記載の熱処理装置を備えることを特徴とする、処理システム。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008083882A JP5352103B2 (ja) | 2008-03-27 | 2008-03-27 | 熱処理装置および処理システム |
US12/409,664 US20090242129A1 (en) | 2008-03-27 | 2009-03-24 | Thermal processing apparatus and processing system |
CN200910129357A CN101546699A (zh) | 2008-03-27 | 2009-03-24 | 热处理装置和处理*** |
TW098109965A TWI437660B (zh) | 2008-03-27 | 2009-03-26 | Heat treatment device and processing system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008083882A JP5352103B2 (ja) | 2008-03-27 | 2008-03-27 | 熱処理装置および処理システム |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009239056A true JP2009239056A (ja) | 2009-10-15 |
JP2009239056A5 JP2009239056A5 (ja) | 2011-05-12 |
JP5352103B2 JP5352103B2 (ja) | 2013-11-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008083882A Active JP5352103B2 (ja) | 2008-03-27 | 2008-03-27 | 熱処理装置および処理システム |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090242129A1 (ja) |
JP (1) | JP5352103B2 (ja) |
CN (1) | CN101546699A (ja) |
TW (1) | TWI437660B (ja) |
Cited By (84)
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WO2012063901A1 (ja) * | 2010-11-11 | 2012-05-18 | 東京エレクトロン株式会社 | 半導体装置の製造方法および製造装置 |
JP2015528647A (ja) * | 2012-09-17 | 2015-09-28 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 差異的な酸化ケイ素エッチング |
CN105051871A (zh) * | 2013-03-28 | 2015-11-11 | 芝浦机械电子株式会社 | 放置台及等离子体处理装置 |
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TW201003831A (en) | 2010-01-16 |
CN101546699A (zh) | 2009-09-30 |
TWI437660B (zh) | 2014-05-11 |
JP5352103B2 (ja) | 2013-11-27 |
US20090242129A1 (en) | 2009-10-01 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |