JP2009224534A - Power module - Google Patents

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JP2009224534A
JP2009224534A JP2008067120A JP2008067120A JP2009224534A JP 2009224534 A JP2009224534 A JP 2009224534A JP 2008067120 A JP2008067120 A JP 2008067120A JP 2008067120 A JP2008067120 A JP 2008067120A JP 2009224534 A JP2009224534 A JP 2009224534A
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power
circuit board
anisotropic conductive
power module
control
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Akira Sasaki
亮 佐々木
Shoichiro Shimoike
正一郎 下池
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Yaskawa Electric Corp
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Yaskawa Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Combinations Of Printed Boards (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a power module small in thickness of the module, and high in reliability by repeated thermal stress fatigue of a joint part. <P>SOLUTION: This power module includes: a plurality of power semiconductor elements 1; a plurality of control elements 3, 4 controlling the plurality of power semiconductor elements; a power circuit 22 driving the plurality of power semiconductor elements; a power circuit board 10 constituting the circuit; a control circuit 21 comprising a plurality of control elements; and a control circuit board 6 constituting the circuit and comprising a control circuit board. The power module is composed by interposing anisotropic conductive rubber 5 in electrical connection between the power circuit board 10 and the control circuit board 6. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、インバータやサーボアンプなど電子機器に使用するパワーモジュールに関するものである。   The present invention relates to a power module used for an electronic device such as an inverter or a servo amplifier.

従来の第１のパワーモジュールとして、図６に示すようなものがある。図において、２０１は上アーム用セラミック両面基板、２０２は下アーム用セラミック基板、２０３はＰ側端子用金属配線、２０４ははんだ層、２０５ははんだボールである。このパワーモジュールは、上アーム用セラミック両面基板２０１の上下にパワー半導体素子１がはんだボール２０５により接合されて、複数枚のセラミック基板の間に挟むように立体的に実装されたものである（例えば、特許文献１参照）。
また、従来の第２のパワーモジュールとして、図７に示すようなものがある。図において、３１はセラミック基板、３４は半導体素子、３４aははんだボール、３４bははんだ層
７１は樹脂基板、１４４は導電性ゴムである。このパワーモジュールは、セラミック基板３１とセラミック基板３１間に導電性ゴム１４４を挟みこみ圧接して、基板間の電気的な接続を取る構造をしているものである（例えば、特許文献２参照）。
あるいは、従来の第３のパワーモジュールとして、図８に示すようなものがある。図において、３０４はリード、３１３、３１４、３２３は接続用配線、３１７ははんだ層、３２０は単位ユニット、３２１は異方性導電樹脂またはゴムからなる緩衝部材、３２２はマザーボードである。このパワーモジュールは、単位ユニット３２０の接続用配線３１３と別の単位ユニットの接続配線３１４を異方性導電樹脂３２１を挟み込んで圧接することで電気的な接続を行い、三次元的なパワーモジュールを構成するものである（例えば、特許文献３参照）。
このような従来のパワーモジュールは、セラミック基板とパワー半導体との電気的な接続にはんだ接合を行い、セラミック基板とセラミック基板との電気的な接続に導電性ゴムあるいははんだ接合を行いなどの方法で立体的なパワーモジュールを構成するようになっている。
特開２００４−２２８４４号公報（第７頁、図１） 特開平１１−２３８９６２号公報（第１５頁、図９） 特開平６−２７５７７５号公報（第４頁、図４） There is a conventional first power module as shown in FIG. In the figure, 201 is an upper arm ceramic double-sided substrate, 202 is a lower arm ceramic substrate, 203 is a metal wiring for P-side terminals, 204 is a solder layer, and 205 is a solder ball. In this power module, the power semiconductor element 1 is joined to the upper and lower ceramic double-sided substrates 201 by solder balls 205 and mounted three-dimensionally so as to be sandwiched between a plurality of ceramic substrates (for example, , See Patent Document 1).
Further, there is a conventional second power module as shown in FIG. In the figure, 31 is a ceramic substrate, 34 is a semiconductor element, 34a is a solder ball, 34b is a solder layer 71 is a resin substrate, and 144 is a conductive rubber. This power module has a structure in which a conductive rubber 144 is sandwiched and pressed between the ceramic substrate 31 and the ceramic substrate 31 to make electrical connection between the substrates (see, for example, Patent Document 2). .
Alternatively, there is a conventional third power module as shown in FIG. In the figure, 304 is a lead, 313, 314 and 323 are connection wirings, 317 is a solder layer, 320 is a unit unit, 321 is a buffer member made of anisotropic conductive resin or rubber, and 322 is a mother board. In this power module, the connection wiring 313 of the unit unit 320 and the connection wiring 314 of another unit unit are electrically connected by sandwiching the anisotropic conductive resin 321 and the three-dimensional power module is connected. (See, for example, Patent Document 3).
In such a conventional power module, solder bonding is performed for electrical connection between the ceramic substrate and the power semiconductor, and conductive rubber or solder bonding is performed for electrical connection between the ceramic substrate and the ceramic substrate. A three-dimensional power module is configured.
Japanese Patent Laying-Open No. 2004-22844 (page 7, FIG. 1) Japanese Patent Application Laid-Open No. 11-238962 (page 15, FIG. 9) JP-A-6-275775 (4th page, FIG. 4)

ところが、従来の第１のパワーモジュールでは、パワー半導体素子をセラミック両面基板にはんだ接合することにより形成し、それを立体的に積み上げることにより、インバータ回路のハーフブリッジを構成していた。この構成でははんだ接合を用いるためにセラミック基板にある程度の強度が必要であり、セラミック基板の板厚が厚くなることでモジュール全体を薄く作ることができないという問題があった。
また、従来の第２のパワーモジュールでは、パワー回路の入出力の電流の閉回路を形成するような場合は下側のセラミック基板からパワー端子を介して上側のセラミック基板に接続するため、上下のセラミック基板間に間隙が必要であり、モジュール全体を薄く作ることができないという問題もあった。
また、従来の第３のパワーモジュールでは、駆動時の発熱量が大きいパワー半導体素子をセラミック基板で挟みこみ、はんだで接合しているため繰り返しの熱応力疲労ではんだ接合部が破壊するという、接合信頼性が低いという問題もあった。
本発明はこのような問題点に鑑みてなされたものであり、パワー半導体素子の電極と制御基板の銅配線間および制御基板とパワー回路基板間に異方性導電ゴムを挟んで接続し、しかも異方性導電ゴムの一部を外部端子として形成した構造にすることで、モジュール内部の構成部材や隙間を極めて薄くできるパワーモジュールを提供し、接合部分の繰り返し熱応力疲労による信頼性を大きく改善することを目的とする。 However, in the first conventional power module, the power semiconductor element is formed by solder bonding to the ceramic double-sided substrate, and is stacked three-dimensionally to constitute a half bridge of the inverter circuit. In this configuration, since solder bonding is used, a certain degree of strength is required for the ceramic substrate, and there is a problem in that the entire module cannot be made thin due to an increase in the thickness of the ceramic substrate.
Further, in the conventional second power module, when a closed circuit of the input / output current of the power circuit is formed, since the lower ceramic substrate is connected to the upper ceramic substrate via the power terminal, the upper and lower There was a problem that a gap was necessary between the ceramic substrates, and the entire module could not be made thin.
Further, in the conventional third power module, a power semiconductor element that generates a large amount of heat during driving is sandwiched between ceramic substrates and joined with solder, so that the solder joint is destroyed due to repeated thermal stress fatigue. There was also a problem of low reliability.
The present invention has been made in view of such problems, and is connected between the electrodes of the power semiconductor element and the copper wiring of the control board and between the control board and the power circuit board with an anisotropic conductive rubber interposed therebetween, and By providing a structure in which a part of anisotropic conductive rubber is formed as an external terminal, we provide a power module that can make the components and gaps inside the module extremely thin and greatly improve the reliability due to repeated thermal stress fatigue at the joint. The purpose is to do.

上記問題を解決するため、本発明は、次のように構成したものである。
請求項１に記載の発明は、複数のパワー半導体素子と、前記複数のパワー半導体素子を制御する複数の制御素子と、前記複数のパワー半導体素子を駆動するパワー回路と、この回路を構成するパワー回路基板と、前記複数の制御素子からなる制御回路と、この回路を構成する樹脂基板からなる制御回路基板とを備えてなるパワーモジュールにおいて、前記パワー回路基板と前記制御回路基板との電気的接続に異方性導電ゴムを挟み込んで構成したものである。
請求項２に記載の発明は、前記異方性導電ゴムと前記パワー回路基板との間に金属性ポストが形成されたものである。
請求項３に記載の発明は、前記異方性導電ゴムの導電端子に金属箔または金属めっき部材を設けて制御回路の外部制御端子としたものである。 In order to solve the above problems, the present invention is configured as follows.
The invention described in claim 1 includes a plurality of power semiconductor elements, a plurality of control elements for controlling the plurality of power semiconductor elements, a power circuit for driving the plurality of power semiconductor elements, and a power constituting the circuit. In a power module comprising a circuit board, a control circuit comprising the plurality of control elements, and a control circuit board comprising a resin substrate constituting the circuit, electrical connection between the power circuit board and the control circuit board Is constructed by sandwiching anisotropic conductive rubber.
According to a second aspect of the present invention, a metallic post is formed between the anisotropic conductive rubber and the power circuit board.
According to a third aspect of the present invention, a metal foil or a metal plating member is provided on the conductive terminal of the anisotropic conductive rubber to form an external control terminal of the control circuit.

請求項１に記載の発明によると、前記複数のパワー半導体素子をドライブ制御する当該複数の制御素子からなるドライブ回路を備えて構成されるパワーモジュールにおいて、パワー回路を構成するパワー回路基板に実装されているパワー半導体素子と制御回路を構成する制御回路基板との電気的接続に異方性導電ゴムを挟み込んで接続することができるため、モジュールを薄くすることができる。
請求項２に記載の発明によると、前記パワーモジュールにおいて、異方性導電ゴムとパワー回路基板間に金属性ポストを形成しているため、パワー回路の閉回路を構成することができ、パワー回路を薄くすることができる。
請求項３に記載の発明によると、前記異方性導電ゴムの上面に金属製薄膜を形成し、金属薄薄膜の部分をモジュール側面に引き出し制御回路の外部端子として形成するため、パワー半導体素子を駆動する信号を異方性導電ゴムの端子から入出力することができ、パワーモジュールを薄くすることができる。また、異方性導電ゴムでパワー半導体素子と制御基板間あるいは制御基板とパワー回路基板間の接続を行うため、繰り返し熱応力疲労による信頼性を大幅に向上することができる。 According to the first aspect of the present invention, in a power module configured to include a drive circuit including a plurality of control elements that drive-control the plurality of power semiconductor elements, the power module is mounted on a power circuit board that configures the power circuit. Since the anisotropic conductive rubber can be inserted and connected to the electrical connection between the power semiconductor element and the control circuit board constituting the control circuit, the module can be made thin.
According to the second aspect of the present invention, in the power module, since the metallic post is formed between the anisotropic conductive rubber and the power circuit board, a closed circuit of the power circuit can be formed. Can be made thinner.
According to a third aspect of the present invention, a metal thin film is formed on the upper surface of the anisotropic conductive rubber, and a portion of the metal thin film is formed on the side of the module as an external terminal of the control circuit. The driving signal can be input / output from the terminal of the anisotropic conductive rubber, and the power module can be made thin. Further, since the connection between the power semiconductor element and the control board or between the control board and the power circuit board is performed with the anisotropic conductive rubber, the reliability due to repeated thermal stress fatigue can be greatly improved.

以下、本発明の実施の形態について図を参照して説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１は、本発明のパワーモジュールを示す側断面図である。図において、１はパワー半導体素子、２はパワー半導体素子１に設けた電極、３、４はドライブ制御素子、５は異方性導電ゴム、６は樹脂基板からなる制御回路基板、７は制御回路基板６の銅配線、８は金属製ポスト、９は制御端子、１０はセラミック基板上に銅配線を形成したパワー回路基板、１１はパワー端子、１２ははんだ層、１３は異方性導電ゴムの外部（制御）端子、２１は制御回路、２２はパワー回路である。   FIG. 1 is a side sectional view showing a power module of the present invention. In the figure, 1 is a power semiconductor element, 2 is an electrode provided on the power semiconductor element 1, 3, 4 is a drive control element, 5 is an anisotropic conductive rubber, 6 is a control circuit board made of a resin substrate, and 7 is a control circuit. Copper wiring of substrate 6, 8 metal post, 9 control terminal, 10 power circuit board with copper wiring formed on ceramic substrate, 11 power terminal, 12 solder layer, 13 anisotropic conductive rubber An external (control) terminal, 21 is a control circuit, and 22 is a power circuit.

異方性導電ゴム５の詳細を図２に示す。図２（ａ）は接続前の拡大断面図、（ｂ）は接続後の拡大断面図である。図２（ａ）において、電極２は、ゲート電極２ａとソース電極２ｂからなる。異方性導電ゴム５は、シリコーン系のゴム部材５aの中にＮｉ／Ａｕメッキを施した異方性の導電粒子５ｂを局所的に分散配向したものである。導電粒子５ｂを配向した部分が導電端子５ｃとなる。なお、ゴム部材５aの厚さは、接合部分の厚さを用途に合わせて数10μm〜数100μmのものを用いることができる。パワー端子１１はパワー回路基板１０の端部まで引き出すことで形成されている。パワー回路２２は、パワー回路基板１０の銅配線にパワー半導体素子１と金属製ポスト８がはんだ層１２により接合されて構成されている。制御回路２１は、制御回路基板６の上面に制御素子３，４および制御端子９がはんだ層１２により接合されて構成されている。   The details of the anisotropic conductive rubber 5 are shown in FIG. 2A is an enlarged sectional view before connection, and FIG. 2B is an enlarged sectional view after connection. In FIG. 2A, the electrode 2 includes a gate electrode 2a and a source electrode 2b. The anisotropic conductive rubber 5 is obtained by locally dispersing and orienting anisotropic conductive particles 5b subjected to Ni / Au plating in a silicone rubber member 5a. The portion where the conductive particles 5b are oriented becomes the conductive terminal 5c. In addition, the thickness of the rubber member 5a can use the thing of several 10 micrometers-several 100 micrometers according to the use of the thickness of a junction part. The power terminal 11 is formed by drawing out to the end of the power circuit board 10. The power circuit 22 is configured by joining the power semiconductor element 1 and the metal post 8 to the copper wiring of the power circuit board 10 with the solder layer 12. The control circuit 21 is configured by connecting control elements 3 and 4 and a control terminal 9 to the upper surface of the control circuit board 6 with a solder layer 12.

つぎに、異方性導電ゴム５の電気的接続原理を図２（ｂ）により説明する。
図２（ａ）の状態では導電粒子５ｂはゴム中で分散しているため、お互いは接触しておらず上側から下側へつながる導電性パスは形成されていない。図２（ｂ）では、異方性導電ゴム５の上面に制御回路基板６の銅配線７を接触するように配置し、ゴム部材５aの下面にはパワー半導体素子１のゲート電極２ａとソース電極２ｂが接触するように配置し、パワー半導体素子１が実装されたパワー回路２２側を固定した状態で、制御回路基板６が実装された制御回路２１を押圧する。これにより、異方性の導電粒子５ｂがゴム部材５aを破り繋がることで制御回路２１からパワー回路２２に向かう縦方向の導電性パスが形成させる。このため、制御回路基板６の銅配線７とパワー半導体素子１のゲート電極２ａとソース電極２ｂは電気的に接続され、電気的に配線されたパワーモジュールを構成することができる。
このように、異方性導電ゴム５は、制御回路２１とパワー回路２２の間で押圧することにより、制御回路２１とパワー回路２２を電気的に接続している。
本発明が従来技術と異なる部分は、異方性導電ゴム５と金属ポスト８を備えた部分である。 Next, the principle of electrical connection of the anisotropic conductive rubber 5 will be described with reference to FIG.
In the state of FIG. 2A, since the conductive particles 5b are dispersed in the rubber, the conductive paths that are not in contact with each other and are connected from the upper side to the lower side are not formed. In FIG. 2 (b), the copper wiring 7 of the control circuit board 6 is disposed on the upper surface of the anisotropic conductive rubber 5, and the gate electrode 2a and the source electrode of the power semiconductor element 1 are disposed on the lower surface of the rubber member 5a. The control circuit 21 on which the control circuit board 6 is mounted is pressed while the power circuit 22 side on which the power semiconductor element 1 is mounted is fixed. As a result, the anisotropic conductive particles 5b break the rubber member 5a to form a vertical conductive path from the control circuit 21 to the power circuit 22. For this reason, the copper wiring 7 of the control circuit board 6 and the gate electrode 2a and the source electrode 2b of the power semiconductor element 1 are electrically connected, and an electrically wired power module can be configured.
Thus, the anisotropic conductive rubber 5 is electrically connected between the control circuit 21 and the power circuit 22 by being pressed between the control circuit 21 and the power circuit 22.
The portion where the present invention is different from the prior art is a portion including the anisotropic conductive rubber 5 and the metal post 8.

次にパワーモジュールの動作について、図３を用いて説明する。
図３は、本発明のパワーモジュールのブロック回路図である。図において、ドライブ制御端子９は入力端子９ａおよび出力端子９ｂからなり、パワー端子１１はパワー入力端子１１ａおよびパワー出力端子１１ｂからなる。
制御回路２１は、ドライブ制御素子３，４がドライブ制御端子９の入力端子９aと出力端子９ｂに電気的に接続され、ドライブ信号の送受信を行う。さらにパワー入力端子１１aが接続され制御回路２１を構成している。パワー半導体素子１を６個用い３相のハーフブリッジとして電気的に配線し、各相のブリッジの中性点からそれぞれ配線を引き出してパワー出力端子１１bに接続することでパワー回路２２を構成している。 Next, the operation of the power module will be described with reference to FIG.
FIG. 3 is a block circuit diagram of the power module of the present invention. In the figure, the drive control terminal 9 comprises an input terminal 9a and an output terminal 9b, and the power terminal 11 comprises a power input terminal 11a and a power output terminal 11b.
In the control circuit 21, the drive control elements 3 and 4 are electrically connected to the input terminal 9a and the output terminal 9b of the drive control terminal 9, and transmit / receive drive signals. Further, the power input terminal 11a is connected to constitute the control circuit 21. The power circuit 22 is configured by electrically wiring as a three-phase half bridge using six power semiconductor elements 1 and drawing the wiring from the neutral point of each phase bridge and connecting to the power output terminal 11b. Yes.

制御回路２１とパワー回路２２の間の配線として、パワー半導体素子１を駆動するためのゲート配線と、各相に電圧を供給するためのパワー入力配線の接続が必要になる。この部分の接続に前記の異方性導電ゴム５により電気的に接続している。ゲート信号は前記ドライブ制御素子４とパワー半導体素子１のゲート電極２aを異方性導電ゴム５により接続する。また、パワー信号は前記パワー回路基板１０に実装された金属製ポスト８と制御回路基板の銅配線およびパワー半導体素子１のソース電極２bと制御回路基板の銅配線７を異方性導電ゴムにより電気的に接続している。このように前記パワー回路２２の３相ハーフブリッジの閉回路を形成し、駆動することができる。   As wiring between the control circuit 21 and the power circuit 22, it is necessary to connect a gate wiring for driving the power semiconductor element 1 and a power input wiring for supplying a voltage to each phase. This portion is electrically connected by the anisotropic conductive rubber 5. The gate signal connects the drive control element 4 and the gate electrode 2 a of the power semiconductor element 1 by an anisotropic conductive rubber 5. Further, the power signal is generated by anisotropically conductive rubber between the metal post 8 mounted on the power circuit board 10 and the copper wiring of the control circuit board, and the source electrode 2b of the power semiconductor element 1 and the copper wiring 7 of the control circuit board. Connected. In this way, a closed circuit of the three-phase half bridge of the power circuit 22 can be formed and driven.

図４は第２実施例の構成を示すパワーモジュールの側断面図である。図において、１３は異方性導電ゴム５に設けた外部制御端子である。その他の構成部材は第１実施例と同じであるため、詳細な説明は省略する。実施例１と同様に制御端子が形成されている異方性導電ゴム５は上面に制御回路２１を配置し、下面にパワー回路２２を配置し、制御回路２１を応圧することで、異方性導電ゴム５の縦方向の導電性パスが形成され、電気的に配線されたパワーモジュールを構成することができる。外部制御端子１３を形成した異方性導電ゴム５はゴム部材５ａの端部が外部制御端子１３として電気的に配線されているため、数10μmから数100μmの極めて薄い外部端子を形成している。   FIG. 4 is a side sectional view of the power module showing the configuration of the second embodiment. In the figure, 13 is an external control terminal provided on the anisotropic conductive rubber 5. The other constituent members are the same as those in the first embodiment, and thus detailed description thereof is omitted. In the anisotropic conductive rubber 5 in which the control terminals are formed as in the first embodiment, the control circuit 21 is disposed on the upper surface, the power circuit 22 is disposed on the lower surface, and the control circuit 21 is subjected to pressure, so that the anisotropic conductive rubber 5 is anisotropic. A conductive module in the vertical direction of the conductive rubber 5 is formed, and an electrically wired power module can be configured. The anisotropic conductive rubber 5 on which the external control terminal 13 is formed has an extremely thin external terminal of several tens to several hundreds of μm because the end of the rubber member 5a is electrically wired as the external control terminal 13. .

図５は外部制御端子１３を形成した異方性導電ゴム５を拡大したものである。異方性導電ゴム５の外部端子材料として、ゴム部材５ａの表面に圧延した銅箔およびアルミ箔を貼り付けた後でエッチングして形成している。箔の厚さは用途に併せて数10μmから数100μmの厚さで制御している。また、繰り返し曲げ耐性を気にする必要が無ければ、異方性導電ゴム５の端部にメッキにより箔を形成してもよい。このように、異方性導電性ゴム５の一部に数10μmから数100μmの金属箔を形成して制御端子を形成しているので、パワーモジュールの制御端子が不要であり、薄く造ることができる。   FIG. 5 is an enlarged view of the anisotropic conductive rubber 5 on which the external control terminal 13 is formed. As the external terminal material of the anisotropic conductive rubber 5, it is formed by attaching a rolled copper foil and an aluminum foil to the surface of the rubber member 5a and then etching. The thickness of the foil is controlled by a thickness of several tens of μm to several hundreds of μm according to the application. Further, if it is not necessary to worry about repeated bending resistance, a foil may be formed by plating at the end of the anisotropic conductive rubber 5. As described above, since the control terminal is formed by forming a metal foil of several tens of μm to several hundreds of μm on a part of the anisotropic conductive rubber 5, the control terminal of the power module is unnecessary and can be made thin. it can.

制御回路とパワー回路の電気的な接続を異方性導電ゴムを介して圧接してパワーモジュール形成しているので、モジュール構成後に分離して使うことができるので、装置の構成の要求により制御回路とパワー回路を物理的に離して、その間をフレキシブル基板で接続してパワーモジュールとして駆動するという用途にも適用できる。   Since the power module is formed by pressing the electrical connection between the control circuit and the power circuit via anisotropic conductive rubber, it can be used separately after the module configuration. The power circuit can be physically separated, and the power circuit can be connected with a flexible substrate to drive as a power module.

本発明の第１実施例を示すパワーモジュールの側断面図1 is a side sectional view of a power module showing a first embodiment of the present invention. 図１の異方性導電ゴムの詳細を示す拡大側断面図FIG. 1 is an enlarged side sectional view showing details of the anisotropic conductive rubber of FIG. 本発明のパワーモジュールのブロック回路図Block diagram of power module of the present invention 本発明の第２実施例を示すパワーモジュールの側断面図Side sectional view of a power module showing a second embodiment of the present invention 図４の異方性導電ゴムの詳細を示す拡大側断面図FIG. 4 is an enlarged side sectional view showing details of the anisotropic conductive rubber of FIG. 従来の第１のパワーモジュールを示す側断面図Side sectional view showing a conventional first power module 従来の第２のパワーモジュールを示す側断面図Side sectional view showing a conventional second power module 従来の第３のパワーモジュールを示す側断面図Side sectional view showing a conventional third power module

符号の説明Explanation of symbols

１ パワー半導体素子
２ 電極
２a ゲート電極
２b ソース電極
３、４ 制御素子
５ 異方性導電ゴム
５ａ ゴム部材
５ｂ 導電粒子
５ｃ 導電端子
６ 制御回路基板（樹脂基板）
７ 銅配線
８ 金属製ポスト
９ 制御端子
９a 入力端子
９b 出力端子
１０ パワー回路基板（セラミック基板）
１１ パワー端子
１１a パワー入力端子
１１b パワー出力端子
１２ はんだ層
１３ 外部端子
２１ 制御回路
２２ パワー回路
３１ セラミック基板
３４ 半導体素子
３４a はんだボール
３４b はんだ層
７１ 樹脂基板
１４４ 導電性ゴム
２０１ 上アーム用セラミック両面基板
２０２ 下アーム用セラミック基板
２０３ Ｐ側端子用金属配線
２０４ はんだ層
２０５ はんだボール
３０４ リード
３１３、３１４、３２３ 接続用配線
３１７ はんだ層
３２０ 単位ユニット
３２１ 緩衝部材（異方性導電樹脂またはゴム）
３２２ マザーボード DESCRIPTION OF SYMBOLS 1 Power semiconductor element 2 Electrode 2a Gate electrode 2b Source electrode 3, 4 Control element 5 Anisotropic conductive rubber 5a Rubber member 5b Conductive particle 5c Conductive terminal 6 Control circuit board (resin board)
7 Copper wiring 8 Metal post 9 Control terminal 9a Input terminal 9b Output terminal 10 Power circuit board (ceramic board)
11 Power terminal 11a Power input terminal 11b Power output terminal 12 Solder layer 13 External terminal 21 Control circuit 22 Power circuit 31 Ceramic substrate 34 Semiconductor element 34a Solder ball 34b Solder layer 71 Resin substrate 144 Conductive rubber 201 Ceramic double-sided substrate 202 for upper arm Lower arm ceramic substrate 203 P side terminal metal wiring 204 Solder layer 205 Solder ball 304 Lead 313, 314, 323 Connection wiring
317 Solder layer 320 Unit unit 321 Buffer member (anisotropic conductive resin or rubber)
322 Motherboard

Claims (3)

複数のパワー半導体素子と、前記複数のパワー半導体素子を制御する複数の制御素子と、前記複数のパワー半導体素子を駆動するパワー回路と、この回路を構成するパワー回路基板と、前記複数の制御素子からなる制御回路と、この回路を構成する樹脂基板からなる制御回路基板と、を備えてなるパワーモジュールにおいて、
前記パワー回路基板と前記制御回路基板との電気的接続に異方性導電ゴムを挟み込んで構成したことを特徴とするパワーモジュール。 A plurality of power semiconductor elements, a plurality of control elements for controlling the plurality of power semiconductor elements, a power circuit for driving the plurality of power semiconductor elements, a power circuit board constituting the circuit, and the plurality of control elements In a power module comprising: a control circuit comprising: a control circuit board comprising a resin substrate constituting the circuit;
A power module comprising an anisotropic conductive rubber sandwiched between electrical connections between the power circuit board and the control circuit board. 前記異方性導電ゴムの導電端子と、前記パワー回路基板のパワー入出力端子との間を接続する金属性ポストが形成されていることを特徴とする請求項１記載のパワーモジュール。   The power module according to claim 1, wherein a metallic post that connects between the conductive terminal of the anisotropic conductive rubber and the power input / output terminal of the power circuit board is formed. 前記異方性導電ゴムの導電端子に金属箔または金属めっき材を設けて制御回路の外部端子としたことを特徴とする請求項１記載のパワーモジュール。   The power module according to claim 1, wherein a metal foil or a metal plating material is provided on the conductive terminal of the anisotropic conductive rubber to form an external terminal of the control circuit.
JP2008067120A 2008-03-17 2008-03-17 Power module Pending JP2009224534A (en)

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US9093277B2 (en) 2013-02-06 2015-07-28 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing the same
JP2016195178A (en) * 2015-03-31 2016-11-17 アイシン・エィ・ダブリュ株式会社 Semiconductor module
JP2018191011A (en) * 2011-04-04 2018-11-29 ローム株式会社 Semiconductor device and semiconductor device manufacturing method
JP7414878B2 (en) 2022-04-04 2024-01-16 三菱電機株式会社 power converter

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JPH07263622A (en) * 1994-03-25 1995-10-13 Toshiba Corp Semiconductor device
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Publication number Priority date Publication date Assignee Title
JP2018191011A (en) * 2011-04-04 2018-11-29 ローム株式会社 Semiconductor device and semiconductor device manufacturing method
JP2014051553A (en) * 2012-09-05 2014-03-20 Mitsubishi Chemicals Corp Interlaminar filler composition for three-dimensional laminate type semiconductor device, three-dimensional laminate type semiconductor device, and manufacturing method of three-dimensional laminate type semiconductor device
US9093277B2 (en) 2013-02-06 2015-07-28 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing the same
DE102013219959B4 (en) 2013-02-06 2019-04-18 Mitsubishi Electric Corp. Semiconductor device and method for manufacturing the same
JP2016195178A (en) * 2015-03-31 2016-11-17 アイシン・エィ・ダブリュ株式会社 Semiconductor module
JP7414878B2 (en) 2022-04-04 2024-01-16 三菱電機株式会社 power converter

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