JP2005252134A - Joining method and structure of film substrate - Google Patents

Joining method and structure of film substrate Download PDF

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JP2005252134A
JP2005252134A JP2004063591A JP2004063591A JP2005252134A JP 2005252134 A JP2005252134 A JP 2005252134A JP 2004063591 A JP2004063591 A JP 2004063591A JP 2004063591 A JP2004063591 A JP 2004063591A JP 2005252134 A JP2005252134 A JP 2005252134A
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film substrate
semiconductor chip
connection terminal
substrate
electrode terminal
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Hideaki Watanabe
英章 渡辺
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Casio Computer Co Ltd
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Casio Computer Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To secure the joining strength of a film substrate even when shortening a terminal. <P>SOLUTION: The side of the base end 12b of a connective terminal 12 provided on a film substrate 1 is joined by thermocompression bonding via an anisotropic conductive bonding material 13 to an electrode terminal 10 present on a transparent substrate 5 having a semiconductor chip 7 joined thereto. Also, the side of the end 12c of the connective terminal 12 is joined via a bonding agent 14 to the top surface of the semiconductor chip 7. Accordingly, the connective terminal 12 of the film substrate 1 can be joined to the transparent substrate 5 at two places comprising the electrode terminal 10 of the transparent substrate 5 and the top surface of the semiconductor chip 7. Therefore, even when shortening the electrode terminal 10 of the transparent substrate 5, the joining strength of the connective terminal 12 can be secured. Also, the space between electrode terminals 10a and the space between the connective terminals 12a can be so reduced respectively as to make increasable the number of arranging numbers per unit area of the terminals 10a, 12a, and as to make reducible electric resistance values of the terminals by increasing widths of the terminals. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

この発明は、液晶表示装置の透明基板などの配線基板に接合されるフィルム基板の接合方法およびフィルム基板の接合構造に関する。   The present invention relates to a method for bonding a film substrate to be bonded to a wiring substrate such as a transparent substrate of a liquid crystal display device, and a bonding structure for the film substrate.

例えば、携帯電話機や携帯情報端末機などの電子機器においては、小型化に伴い、それらに使用される液晶表示装置の小型化および狭額縁化が要望されている。液晶表示装置では基板の端部に配列されて設けられた複数の電極端子が、外部回路からの信号を出力するためにのフィルム基板などの複数の接続端子とそれぞれ電気的に接続されるが、これら接続端子の延在方向に沿う電極端子の長さを短くする方がより狭額縁化を図ることができる。しかし、このように液晶表示装置の電極端子の長さを短くすると、フィルム基板の接続端子が接合する接合面積が小さくなり、フィルム基板の接合強度が低下する。   For example, electronic devices such as mobile phones and personal digital assistants are required to be downsized and have a narrower frame for liquid crystal display devices used in the electronic devices. In the liquid crystal display device, a plurality of electrode terminals arranged at the end of the substrate are electrically connected to a plurality of connection terminals such as a film substrate for outputting a signal from an external circuit, respectively. A narrower frame can be achieved by shortening the length of the electrode terminals along the extending direction of the connection terminals. However, when the length of the electrode terminal of the liquid crystal display device is shortened in this way, the bonding area where the connection terminal of the film substrate is bonded is reduced, and the bonding strength of the film substrate is lowered.

そこで、特許文献１では、フィルム基板の接続端子間に接合強度を高めるためのレジストからなる絶縁部を設け、これら絶縁部が設けられたフィルム基板の接続端子部分と液晶表示装置の電極端子部分とを接合するときに、フィルム基板の各接続端子と液晶表示装置の各電極端子とを対応させた状態で、フィルム基板の接続端子部分と液晶表示装置の電極端子部分とを異方導電性接着材を介して熱圧着により接合していることが示されている。これにより、接続端子と電極端子とが対応しない部分の接合強度を絶縁部によって高めている。
特開２００３−２４３８２１号公報 Therefore, in Patent Document 1, an insulating portion made of a resist for increasing the bonding strength is provided between the connecting terminals of the film substrate, and the connecting terminal portion of the film substrate provided with these insulating portions and the electrode terminal portion of the liquid crystal display device are provided. The anisotropic conductive adhesive is used to connect the connection terminal portion of the film substrate and the electrode terminal portion of the liquid crystal display device in a state in which the connection terminals of the film substrate correspond to the electrode terminals of the liquid crystal display device. It is shown that they are joined by thermocompression bonding. Thereby, the junction strength of the portion where the connection terminal does not correspond to the electrode terminal is increased by the insulating portion.
JP 2003-243821 A

しかしながら、上記のような従来のフィルム基板の接合構造では、フィルム基板の接続端子間に接合強度を高める絶縁部を設けるために、フィルム基板の接続端子の間隔を狭くすることができない。   However, in the conventional film substrate bonding structure as described above, an insulating portion that increases the bonding strength is provided between the connection terminals of the film substrate, so that the interval between the connection terminals of the film substrate cannot be reduced.

この発明が解決しようとする課題は、液晶表示装置の電極端子の短端子化を図ることによって液晶表示装置の基板の表示領域に対する非表示領域の比率を低くしても、接合強度を十分に確保できるフィルム基板の接合方法およびフィルム基板の接合構造を提供することである。   The problem to be solved by the present invention is to secure sufficient bonding strength even if the ratio of the non-display area to the display area of the substrate of the liquid crystal display device is reduced by shortening the electrode terminals of the liquid crystal display device. A film substrate bonding method and a film substrate bonding structure are provided.

この発明は、上記課題を解決するために、次のような構成要素を備えている。
なお、各構成要素には、後述する各実施形態の項で説明される各要素に付されている図面の参照番号などを括弧と共に付す。 In order to solve the above problems, the present invention includes the following components.
In addition, the reference numerals of the drawings attached to the respective elements described in the section of each embodiment described later are attached to the respective constituent elements together with parentheses.

請求項１に記載の発明は、図１〜図６に示すように、配線基板（例えば透明基板５）の上に設けられた電極端子部（例えば電極端子部１０）の電極端子（例えば電極端子１０ａ）に電気的に接続された半導体チップ（例えば半導体チップ７）の上面にフィルム基板（例えばフィルム基板１）の先端部（例えば先端部１２ｃ、２１ｄ、２６ｃ）を接合するとともに、前記フィルム基板の基端部（例えば基端部１２ｂ、２１ｃ、２６ｂ）に設けられた接続端子（例えば接続端子１２ａ、２１ａ、２６ａ）を前記電極端子に接続することを特徴とするフィルム基板の接合方法である。   The invention according to claim 1 is an electrode terminal (for example, electrode terminal) of an electrode terminal portion (for example, electrode terminal portion 10) provided on a wiring board (for example, transparent substrate 5) as shown in FIGS. 10a), a front end portion (for example, front end portion 12c, 21d, 26c) of a film substrate (for example, film substrate 1) is joined to the upper surface of a semiconductor chip (for example, semiconductor chip 7) electrically connected to 10a), and the film substrate A film substrate bonding method comprising connecting connection terminals (for example, connection terminals 12a, 21a, and 26a) provided at base end portions (for example, base end portions 12b, 21c, and 26b) to the electrode terminals.

請求項２に記載の発明は、図１〜図６に示すように、少なくとも前記フィルム基板の前記接続端子が設けられている前記基端部（例えば基端部１２ｂ、２１ｃ、２６ｂ）側を前記配線基板の前記電極端子部に異方導電性接着材（例えば異方導電性接着材１３）を介して熱圧着により接合することを特徴とする請求項１に記載のフィルム基板の接合方法である。   1 to 6, at least the base end portion (for example, the base end portions 12b, 21c, 26b) side of the film substrate on which the connection terminal is provided, 2. The film substrate joining method according to claim 1, wherein the electrode terminal portion of the wiring board is joined by thermocompression bonding via an anisotropic conductive adhesive (for example, anisotropic conductive adhesive 13). .

請求項３に記載の発明は、前記異方導電性接着材が、絶縁性を有する接着剤中に導電性を有する粒子を混入させたものであり、絶縁性を有する前記接着剤は熱硬化性樹脂からなることを特徴とする請求項２に記載のフィルム基板の接合方法である。   According to a third aspect of the present invention, the anisotropic conductive adhesive is obtained by mixing conductive particles in an insulating adhesive, and the insulating adhesive is thermosetting. The film substrate bonding method according to claim 2, comprising a resin.

請求項４に記載の発明は、図１〜図６に示すように、配線基板（例えば透明基板５）の上に設けられた電極端子部（例えば電極端子部１０）の電極端子（例えば電極端子１０ａ）に電気的に接続された半導体チップ（例えば半導体チップ７）の上面にフィルム基板（例えばフィルム基板１）の先端部（例えば先端部１２ｃ、２１ｄ、２６ｃ）が接合されているとともに、前記フィルム基板の基端部（例えば基端部１２ｂ、２１ｃ、２６ｂ）に設けられた接続端子（例えば接続端子１２ａ、２１ａ、２６ａ）が前記電極端子に接続されていることを特徴とするフィルム基板の接合構造である。   As shown in FIGS. 1 to 6, the invention according to claim 4 is an electrode terminal (for example, electrode terminal) of an electrode terminal portion (for example, electrode terminal portion 10) provided on a wiring board (for example, transparent substrate 5). 10a) is connected to the top surface of a film substrate (for example, the film substrate 1) (for example, the front end portions 12c, 21d, and 26c) on the upper surface of a semiconductor chip (for example, the semiconductor chip 7) electrically connected to 10a), and the film Connection of film substrates, characterized in that connection terminals (for example, connection terminals 12a, 21a, 26a) provided at base end portions (for example, base end portions 12b, 21c, 26b) of the substrate are connected to the electrode terminals. Structure.

請求項５に記載の発明は、図４〜図６に示すように、前記フィルム基板の前記接続端子が設けられている接続端子部（例えば接続端子部２１、２６）には、前記配線基板の前記電極端子から前記半導体チップの前記上面に亘って前記接続端子が設けられ、前記半導体チップの前記上面には、前記フィルム基板の前記接続端子の少なくとも一部が対応して接合されるバンプ（例えばバンプ電極２０、バンプ２５）が設けられていることを特徴とする請求項４に記載のフィルム基板の接合構造である。   As shown in FIGS. 4 to 6, the connection terminal portion (for example, the connection terminal portions 21 and 26) where the connection terminal of the film substrate is provided is provided on the wiring substrate. The connection terminal is provided from the electrode terminal to the upper surface of the semiconductor chip, and at least a part of the connection terminal of the film substrate is bonded to the upper surface of the semiconductor chip correspondingly (for example, 5. The film substrate bonding structure according to claim 4, wherein a bump electrode and a bump are provided.

請求項６に記載の発明は、図４〜図６に示すように、前記フィルム基板の前記接続端子部が、前記配線基板の前記電極端子と前記半導体チップの前記バンプが設けられた前記上面とに異方導電性接着材（例えば異方導電性接着材１３）を介して熱圧着により接合されていることを特徴とする請求項５に記載のフィルム基板の接合構造である。   As shown in FIGS. 4 to 6, the connection terminal portion of the film substrate includes the electrode terminal of the wiring substrate and the upper surface provided with the bumps of the semiconductor chip. The film substrate bonding structure according to claim 5, wherein the film substrate is bonded by thermocompression bonding via an anisotropic conductive adhesive (for example, anisotropic conductive adhesive 13).

請求項１に記載の発明によれば、配線基板上に設けられた電極端子部の電極端子に電気的に接続された半導体チップの上面にフィルム基板の先端部を接合しているため、フィルム基板と配線基板の接合性を強化できるので、配線基板の電極端子の延在方向に沿う長さを短くして液晶表示装置の基板の表示領域に対する非表示領域の比率を低くしても、フィルムと配線基板との接合強度を確保することができる。また、フィルム基板の複数の接続端子間に絶縁部を広く設ける必要がないので、フィルム基板の各接続端子の間隔および配線基板の各電極端子の間隔を狭くすることができ、これにより単位面積当たりの端子の配列数を高めることができるほか、各端子の幅を広くすることができるので、各端子の電気抵抗値を下げることができる。   According to the first aspect of the present invention, since the front end portion of the film substrate is bonded to the upper surface of the semiconductor chip electrically connected to the electrode terminal of the electrode terminal portion provided on the wiring substrate, the film substrate Even if the length along the extending direction of the electrode terminals of the wiring board is shortened to reduce the ratio of the non-display area to the display area of the substrate of the liquid crystal display device, Bonding strength with the wiring board can be ensured. In addition, since it is not necessary to provide a wide insulating portion between the plurality of connection terminals of the film substrate, the distance between the connection terminals of the film substrate and the distance between the electrode terminals of the wiring substrate can be reduced. The number of terminals can be increased, and the width of each terminal can be increased, so that the electrical resistance value of each terminal can be reduced.

請求項２に記載の発明によれば、少なくともフィルム基板の基端部を配線基板の電極端子部に異方導電性接着材を介して熱圧着により接合することにより、フィルム基板の各接続端子の間隔と配線基板の各電極端子の間隔とを狭くしても、異方導電性接着材によって互いに対向するフィルム基板の各接続端子と配線基板の各電極端子との導通を確実に図ることができると共に、熱圧着によって確実に且つ強固に接合することができる。この場合、フィルム基板の先端部と半導体チップの上面との接合も、異方導電性接着材を介して熱圧着によって接合しても良く、また単に接着剤で接合しただけでも良い。   According to invention of Claim 2, at least the base end part of a film board | substrate is joined to the electrode terminal part of a wiring board by thermocompression bonding via an anisotropic conductive adhesive, and each connection terminal of a film board | substrate is connected. Even if the gap and the gap between the electrode terminals of the wiring board are narrowed, conduction between the connection terminals of the film board and the electrode terminals of the wiring board facing each other can be ensured by the anisotropic conductive adhesive. At the same time, it can be securely and firmly joined by thermocompression bonding. In this case, the tip of the film substrate and the upper surface of the semiconductor chip may be joined by thermocompression bonding via an anisotropic conductive adhesive, or simply joined with an adhesive.

請求項３に記載の発明によれば、異方導電性接着材が絶縁性を有する接着剤中に導電性を有する粒子を混入させたものであり、絶縁性を有する接着剤が熱硬化性樹脂からなることにより、フィルム基板の接続端子が設けられた接続端子部を配線基板の電極端子部と半導体チップの上面とに熱圧着するときに、異方導電性接着材の接着剤によって確実に接着することができるほか、特に接着剤が熱硬化性樹脂であるから、熱圧着により接着剤を硬化させることができ、より一層、強固に接合することができる。   According to the third aspect of the invention, the anisotropic conductive adhesive is obtained by mixing conductive particles in the insulating adhesive, and the insulating adhesive is a thermosetting resin. Therefore, when the connection terminal portion provided with the connection terminal of the film substrate is thermocompression bonded to the electrode terminal portion of the wiring substrate and the upper surface of the semiconductor chip, it is securely bonded by the adhesive of the anisotropic conductive adhesive. In addition, since the adhesive is a thermosetting resin in particular, the adhesive can be cured by thermocompression bonding and can be further strongly bonded.

請求項４に記載の発明によれば、配線基板上に設けられた電極端子部の電極端子に電気的に接続された半導体チップの上面にフィルム基板の先端部を接合しているため、フィルム基板と配線基板の接合性を強化できるので、配線基板の電極端子の延在方向に沿う長さを短くして液晶表示装置の基板の表示領域に対する非表示領域の比率を低くしても、フィルムと配線基板との接合強度を確保することができる。この場合にも、フィルム基板の複数の接続端子間に絶縁部を広く設ける必要がないので、フィルム基板の各接続端子の間隔および配線基板の各電極端子の間隔を狭くすることができ、これにより単位面積当たりの端子の配列数を高めることができるほか、各端子の幅を広くすることができ、各端子の電気抵抗値を下げることができる。   According to the invention described in claim 4, since the tip of the film substrate is bonded to the upper surface of the semiconductor chip electrically connected to the electrode terminal of the electrode terminal portion provided on the wiring substrate, the film substrate Even if the length along the extending direction of the electrode terminals of the wiring board is shortened to reduce the ratio of the non-display area to the display area of the substrate of the liquid crystal display device, Bonding strength with the wiring board can be ensured. Also in this case, since it is not necessary to provide a wide insulating portion between the plurality of connection terminals of the film substrate, the distance between the connection terminals of the film substrate and the distance between the electrode terminals of the wiring substrate can be reduced. In addition to increasing the number of terminals arranged per unit area, the width of each terminal can be increased, and the electrical resistance value of each terminal can be decreased.

請求項５に記載の発明によれば、半導体チップの上面にフィルム基板の複数の接続端子の少なくとも一部が接合されるバンプが設けられていることにより、フィルム基板の接続端子の少なくとも一部を半導体チップの上面に設けられたバンプによって確実に且つ強固に接合することができる。さらに、バンプ電極に接合されるフィルム基板の接続端子を配線基板の電極端子に対応させずに、バンプ電極のみに対応させて接続することにより、フィルム基板の接続端子と半導体チップのバンプ電極との導通をも図ることができる。   According to the invention described in claim 5, at least a part of the connection terminals of the film substrate is provided by providing bumps to which at least a part of the plurality of connection terminals of the film substrate are bonded on the upper surface of the semiconductor chip. The bumps provided on the upper surface of the semiconductor chip can be securely and firmly bonded. Furthermore, the connection terminal of the film substrate bonded to the bump electrode does not correspond to the electrode terminal of the wiring substrate, but is connected only to the bump electrode, thereby connecting the connection terminal of the film substrate and the bump electrode of the semiconductor chip. Conduction can also be achieved.

請求項６に記載の発明によれば、フィルム基板の接続端子が設けられた接続端子部が配線基板の電極端子部と半導体チップの上面とに異方導電性接着材を介して熱圧着によって接合されていることにより、請求項２に記載の発明と同様、フィルム基板の各接続端子の間隔と配線基板の各電極端子の間隔とを狭くしても、異方導電性接着材によって互いに対向するフィルム基板の各接続端子と配線基板の各電極端子との導通を確実に図ることができると共に、互いに対向するフィルム基板の各接続端子と半導体チップの上面の各バンプとの導通をも確実に図ることができ、これにより導通信頼性の高いものを得ることができる。   According to invention of Claim 6, the connection terminal part in which the connection terminal of the film board was provided joined to the electrode terminal part of a wiring board, and the upper surface of a semiconductor chip by thermocompression bonding via an anisotropic conductive adhesive. Thus, similar to the invention according to claim 2, even if the distance between the connection terminals of the film substrate and the distance between the electrode terminals of the wiring substrate are narrowed, they are opposed to each other by the anisotropic conductive adhesive. Conductivity between each connection terminal of the film substrate and each electrode terminal of the wiring substrate can be ensured, and conduction between each connection terminal of the film substrate facing each other and each bump on the upper surface of the semiconductor chip is also ensured. This makes it possible to obtain a highly reliable conductor.

（実施形態１）
以下、図１〜図３を参照して、この発明を適用した実施形態１について説明する。
図１はこの発明のフィルム基板の接合構造を示した平面図、図２は図１のＡ−Ａ矢視における拡大断面である。これらの図において、１はフィルム基板である。このフィルム基板１は、図１に示すように、液晶表示装置２と回路基板（図示せず）とを電気的に接続するためのものであり、回路基板側の端部（図１では右端部）にコネクタ３が設けられ、このコネクタ３によって回路基板と電気的に接続されるように構成されている。 (Embodiment 1)
A first embodiment to which the present invention is applied will be described below with reference to FIGS.
FIG. 1 is a plan view showing a bonding structure of a film substrate of the present invention, and FIG. 2 is an enlarged cross section taken along the line AA in FIG. In these figures, 1 is a film substrate. As shown in FIG. 1, the film substrate 1 is for electrically connecting a liquid crystal display device 2 and a circuit board (not shown), and has an end on the circuit board side (the right end in FIG. 1). ) Is provided with a connector 3, and the connector 3 is configured to be electrically connected to the circuit board.

液晶表示装置２は、図２に示すように、ガラス、樹脂フィルムなどからなる上下一対の透明基板４、５間に液晶６を封止材６ａによって封入し、下側の透明基板５が上側の透明基板４よりも大きく形成され、これにより下側の透明基板５が上側の透明基板４の側方向に突出し、この突出した部分の上面に半導体チップ７が少なくとも一つ以上搭載されている。この場合、上側の透明基板４から側方向に突出した下側の透明基板５の上面には、入力側配線８と出力側配線９が設けられ、上下の透明基板４、５の表示領域における対向面に複数の透明な電極（図示せず）が形成されており、これら透明電極はそれぞれ各出力側配線９に接続されている。   As shown in FIG. 2, the liquid crystal display device 2 encloses the liquid crystal 6 with a sealing material 6a between a pair of upper and lower transparent substrates 4 and 5 made of glass, resin film, etc., and the lower transparent substrate 5 is on the upper side. The transparent substrate 4 is formed larger than the transparent substrate 4, whereby the lower transparent substrate 5 protrudes in the lateral direction of the upper transparent substrate 4, and at least one semiconductor chip 7 is mounted on the upper surface of the protruding portion. In this case, the input side wiring 8 and the output side wiring 9 are provided on the upper surface of the lower transparent substrate 5 protruding in the lateral direction from the upper transparent substrate 4, and the upper and lower transparent substrates 4 and 5 are opposed to each other in the display area. A plurality of transparent electrodes (not shown) are formed on the surface, and each of these transparent electrodes is connected to each output-side wiring 9.

半導体チップ７は、液晶表示装置２を駆動するためのＬＳＩなどの半導体装置であり、図２に示すように、その下面両側に多数のバンプ電極７ａが設けられ、これらバンプ電極７ａが入力側配線８と出力側配線９とに跨って後述する異方導電性接着材１３によって電気的に接続された状態で接合されている。液晶表示装置２がアクティブマトリクス駆動型である場合、ゲートラインとなる出力側配線９に接続されたゲートドライバとして機能する半導体チップ７や、ソースラインまたはドレインラインとなる出力側配線９に接続されたデータドライバとして機能する半導体チップ７が透明基板５上にそれぞれ設けられている。また、下側の透明基板５の上面における半導体チップ７の右側の端部には、図３に示すように、電極端子部１０が設けられている。この電極端子部１０には、半導体チップ７のバンプ電極７ａが接続された複数の入力側配線８にそれぞれ連続する電極端子１０ａが所定間隔で透明基板５の端部に沿って配列されている。   The semiconductor chip 7 is a semiconductor device such as an LSI for driving the liquid crystal display device 2. As shown in FIG. 2, a large number of bump electrodes 7a are provided on both sides of the lower surface, and these bump electrodes 7a are connected to the input side wiring. 8 and the output side wiring 9 are joined in an electrically connected state by an anisotropic conductive adhesive 13 to be described later. When the liquid crystal display device 2 is an active matrix drive type, it is connected to the semiconductor chip 7 functioning as a gate driver connected to the output side wiring 9 serving as a gate line, or to the output side wiring 9 serving as a source line or drain line. Semiconductor chips 7 functioning as data drivers are provided on the transparent substrate 5, respectively. Further, as shown in FIG. 3, an electrode terminal portion 10 is provided at the right end portion of the semiconductor chip 7 on the upper surface of the lower transparent substrate 5. In the electrode terminal portion 10, electrode terminals 10 a that are respectively continuous with the plurality of input-side wirings 8 to which the bump electrodes 7 a of the semiconductor chip 7 are connected are arranged along the end portion of the transparent substrate 5 at a predetermined interval.

フィルム基板１は、図２および図３に示すように、合成樹脂製の帯状シートの下面に接続配線１１が多数形成されていると共に、透明基板５側に位置する端部（図３では左端部）に接続端子部１２が設けられた構成になっている。この接続端子部１２は、透明基板５の電極端子部１０から半導体チップ７の上面に亘る大きさで形成されている。この接続端子部１２における電極端子部１０に対応する基端部１２ｂ側には、図３に示すように、接続配線１１にそれぞれ連続する接続端子１２ａが所定間隔、つまり電極端子１０ａと同じ間隔でフィルム基板１の端部に沿って多数配列されて形成されている。また、この接続端子部１２における半導体チップ７の上面に対応する先端部１２ｃ側は、接続端子１２ａが設けられておらずに、半導体チップ７の上面に位置するように延出形成されている。   As shown in FIGS. 2 and 3, the film substrate 1 has a plurality of connection wirings 11 formed on the lower surface of a synthetic resin belt-like sheet and an end portion (left end portion in FIG. 3) located on the transparent substrate 5 side. ) Is provided with a connection terminal portion 12. The connection terminal portion 12 is formed in a size ranging from the electrode terminal portion 10 of the transparent substrate 5 to the upper surface of the semiconductor chip 7. As shown in FIG. 3, the connection terminals 12a continuous to the connection wires 11 are provided at predetermined intervals, that is, at the same intervals as the electrode terminals 10a, on the base end portion 12b side corresponding to the electrode terminal portions 10 in the connection terminal portions 12. A large number are arranged along the end of the film substrate 1. Further, the tip 12c side corresponding to the upper surface of the semiconductor chip 7 in the connection terminal portion 12 is formed so as to be positioned on the upper surface of the semiconductor chip 7 without the connection terminal 12a being provided.

これにより、接続端子部１２は、図２および図３に示すように、その基端部１２ｂ側の接続端子１２ａが透明基板５の電極端子部１０の各電極端子１０ａに対応し、先端部１２ｃ側が半導体チップ７の上面に対応し、この状態で透明基板５の電極端子部１０との間に異方導電性接着材１３を介して熱圧着により接合されると共に、半導体チップ７の上面との間に接着剤１４を介して熱圧着により接合されている。この場合、接続端子部１２の先端部１２ｃ側と半導体チップ７の上面との間に介在される接着剤１４は、通常の接着剤であり、このため必ずしも熱圧着により接合する必要はない。   Thereby, as shown in FIGS. 2 and 3, the connection terminal portion 12 has a connection terminal 12 a on the base end portion 12 b side corresponding to each electrode terminal 10 a of the electrode terminal portion 10 of the transparent substrate 5, and a distal end portion 12 c. The side corresponds to the upper surface of the semiconductor chip 7, and is bonded to the electrode terminal portion 10 of the transparent substrate 5 by thermocompression bonding via the anisotropic conductive adhesive 13 in this state. They are joined by thermocompression bonding via an adhesive 14 therebetween. In this case, the adhesive 14 interposed between the front end 12c side of the connection terminal portion 12 and the upper surface of the semiconductor chip 7 is a normal adhesive, and therefore does not necessarily have to be joined by thermocompression bonding.

また、異方導電性接着材１３は、絶縁性を有する接着剤中に導電性を有する粒子を混入させたものであり、厚み方向に加圧されたときに、その厚み方向に導電性を有し、面方向に絶縁性を有するように構成されている。この絶縁性を有する接着剤としては、熱圧着時に硬化する熱硬化性樹脂であることが望ましい。また、導電性を有する粒子は、金属粒子でも良く、また絶縁粒子の表面に導電めっきを施したものでも良く、さらに金属粒子または導電めっきが施された絶縁粒子のいずれかの表面に更に絶縁薄膜を形成し、熱圧着時に厚み方向の絶縁薄膜が破壊されて厚み方向に導電性を有する構造のものでも良い。   Further, the anisotropic conductive adhesive 13 is obtained by mixing conductive particles in an insulating adhesive. When pressed in the thickness direction, the anisotropic conductive adhesive 13 has conductivity in the thickness direction. And it is comprised so that it may have insulation in a surface direction. The insulating adhesive is preferably a thermosetting resin that is cured during thermocompression bonding. In addition, the conductive particles may be metal particles, or the surface of insulating particles may be subjected to conductive plating. Furthermore, the surface of either the metal particles or the insulating particles subjected to conductive plating may be further insulated. The insulating thin film in the thickness direction may be destroyed at the time of thermocompression bonding, and a structure having conductivity in the thickness direction may be used.

次に、このフィルム基板１を液晶表示装置２の透明基板５に接合する接合方法について説明する。
まず、液晶表示装置２の下側の透明基板５の上面におけるチップ搭載領域に異方導電性接着材１３を塗布し、この異方導電性接着材１３を介して半導体チップ７の下面に設けられた多数のバンプ電極７ａを透明基板５に設けられた入力側配線８と出力側配線９とに対応させ、この状態で半導体チップ７を透明基板５に熱圧着によって接合する。これにより、半導体チップ７が入力側配線８を介して透明基板５の電極端子部１０の各電極端子１０ａと電気的に接続された状態で透明基板５上に搭載される。 Next, a bonding method for bonding the film substrate 1 to the transparent substrate 5 of the liquid crystal display device 2 will be described.
First, the anisotropic conductive adhesive 13 is applied to the chip mounting region on the upper surface of the transparent substrate 5 on the lower side of the liquid crystal display device 2, and is provided on the lower surface of the semiconductor chip 7 via the anisotropic conductive adhesive 13. A large number of bump electrodes 7a are made to correspond to the input side wiring 8 and the output side wiring 9 provided on the transparent substrate 5, and in this state, the semiconductor chip 7 is bonded to the transparent substrate 5 by thermocompression bonding. As a result, the semiconductor chip 7 is mounted on the transparent substrate 5 in a state of being electrically connected to the electrode terminals 10 a of the electrode terminal portion 10 of the transparent substrate 5 via the input-side wiring 8.

この後、透明基板５の電極端子部１０上に未硬化の異方導電性接着材１３を塗布すると共に、半導体チップ７の上面におけるフィルム基板１の接続端子部１２の先端部１２ｃ側に対応する部分に未硬化の接着剤１４を塗布する。そして、異方導電性接着材１３を介してフィルム基板１の接続端子部１２の基端部１２ｂ側に位置する各接続端子１２ａを透明基板５の電極端子部１０の各電極端子１０ａにそれぞれ対応させると共に、フィルム基板１の接続端子部１２の先端部１２ｃ側を半導体チップ７の上面に対応させる。   Thereafter, an uncured anisotropic conductive adhesive 13 is applied on the electrode terminal portion 10 of the transparent substrate 5, and corresponds to the front end portion 12 c side of the connection terminal portion 12 of the film substrate 1 on the upper surface of the semiconductor chip 7. Uncured adhesive 14 is applied to the part. And each connection terminal 12a located in the base end part 12b side of the connection terminal part 12 of the film board | substrate 1 via the anisotropic conductive adhesive material 13 respond | corresponds to each electrode terminal 10a of the electrode terminal part 10 of the transparent substrate 5, respectively. At the same time, the front end portion 12 c side of the connection terminal portion 12 of the film substrate 1 is made to correspond to the upper surface of the semiconductor chip 7.

この状態で、図示しない熱圧着ヘッドによりフィルム基板１の接続端子部１２の基端部１２ｂ側を透明基板５の電極端子部１０に熱圧着により接合すると共に、フィルム基板１の接続端子部１２の先端部１２ｃ側を半導体チップ７の上面に接合する。これにより、フィルム基板１の接続端子部１２の各接続端子１２ａと透明基板５の電極端子部１０の各電極端子１０ａとが異方導電性接着材１３により互いに導通して接合されると共に、フィルム基板１の接続端子部１２の先端部１２ｃ側と半導体チップ７の上面とが接着剤１４により接合される。   In this state, the base end portion 12b side of the connection terminal portion 12 of the film substrate 1 is joined to the electrode terminal portion 10 of the transparent substrate 5 by thermocompression bonding with a thermocompression bonding head (not shown), and the connection terminal portion 12 of the film substrate 1 is connected. The tip 12c side is bonded to the upper surface of the semiconductor chip 7. As a result, each connection terminal 12a of the connection terminal portion 12 of the film substrate 1 and each electrode terminal 10a of the electrode terminal portion 10 of the transparent substrate 5 are electrically connected to each other by the anisotropic conductive adhesive 13, and the film The front end portion 12 c side of the connection terminal portion 12 of the substrate 1 and the upper surface of the semiconductor chip 7 are joined by an adhesive 14.

この場合、異方導電性接着材１３が絶縁性を有する接着剤中に導電性を有する粒子を混入させたものであることにより、フィルム基板１の接続端子部１２と透明基板５の電極端子部１０とを熱圧着すると、異方導電性接着材１３の導電性を有する粒子によって互いに対向する接続端子１２ａと電極端子１０ａとを確実に導通させることができると共に、異方導電性接着材１３中の接着剤によって確実に接着することができる。特に、異方導電性接着材１３の接着剤が熱硬化性樹脂であるから、熱圧着により接着剤を加圧して硬化させることができ、これにより接続端子部１２の基端部１２ｂ側と電極端子部１０とを強固に接合することができる。   In this case, the anisotropic conductive adhesive 13 is obtained by mixing conductive particles in the insulating adhesive, so that the connection terminal portion 12 of the film substrate 1 and the electrode terminal portion of the transparent substrate 5 are mixed. 10 can be reliably connected to each other between the connection terminal 12a and the electrode terminal 10a facing each other by the conductive particles of the anisotropic conductive adhesive 13, and the anisotropic conductive adhesive 13 It can be securely bonded by the adhesive. In particular, since the adhesive of the anisotropic conductive adhesive 13 is a thermosetting resin, the adhesive can be pressurized and cured by thermocompression bonding, whereby the base end 12b side of the connection terminal portion 12 and the electrode The terminal portion 10 can be firmly joined.

このように、このフィルム基板１の接合方法およびその接合構造によれば、フィルム基板１に設けられた接続端子部１２の基端部１２ｂ側を半導体チップ７が搭載された透明基板５上の電極端子部１０に異方導電性接着材１３を介して熱圧着により接合すると共に、この接続端子部１２の先端部１２ｃ側を半導体チップ７の上面に接着剤１４を介して接合するので、フィルム基板１の接続端子部１２を透明基板５の電極端子部１０と半導体チップ７の上面との２か所で接合することができる。   Thus, according to the bonding method and the bonding structure of the film substrate 1, the electrode on the transparent substrate 5 on which the semiconductor chip 7 is mounted on the base end portion 12 b side of the connection terminal portion 12 provided on the film substrate 1. Since it joins to the terminal part 10 by thermocompression bonding via the anisotropic conductive adhesive 13, and the tip part 12c side of this connection terminal part 12 is joined to the upper surface of the semiconductor chip 7 via the adhesive 14, the film substrate One connection terminal portion 12 can be joined at two locations of the electrode terminal portion 10 of the transparent substrate 5 and the upper surface of the semiconductor chip 7.

このため、透明基板５の電極端子部１０における電極端子１０ａの延在方向に沿う長さ、つまり電極端子１０ａの配列方向と直交する方向の長さを短くして短端子化を図ることができると共に、透明基板５の電極端子部１０の短端子化を図っても、フィルム基板１の接続端子部１２が基端部１２ｂで透明基板５の電極端子部１０と接合するとともに先端部１２ｃで半導体チップ７の上面と接合されているので、透明基板５に対するフィルム基板１の接続端子部１２の接合強度を確保することができる。   For this reason, the length along the extending direction of the electrode terminal 10a in the electrode terminal portion 10 of the transparent substrate 5, that is, the length in the direction orthogonal to the arrangement direction of the electrode terminals 10a can be shortened to shorten the terminal. At the same time, even if the electrode terminal portion 10 of the transparent substrate 5 is shortened, the connection terminal portion 12 of the film substrate 1 is joined to the electrode terminal portion 10 of the transparent substrate 5 at the base end portion 12b and the semiconductor at the tip end portion 12c. Since it is bonded to the upper surface of the chip 7, the bonding strength of the connection terminal portion 12 of the film substrate 1 to the transparent substrate 5 can be ensured.

また、フィルム基板１の各接続端子１２ａ間に接合強度を高めるために絶縁部を広く設ける必要がないので、透明基板５の各電極端子１０ａの間隔およびフィルム基板１の各接続端子１２ａの間隔を狭くすることができる。これにより、電極端子１０ａおよび接続端子１２ａの単位面積当たりの各配列数を高めることができるほか、各端子１０ａ、１２ａの幅を広くすることができるので、各端子１０ａ、１２ａの電気抵抗値を下げることができる。   Further, since it is not necessary to provide a wide insulating portion in order to increase the bonding strength between the connection terminals 12a of the film substrate 1, the distance between the electrode terminals 10a of the transparent substrate 5 and the distance between the connection terminals 12a of the film substrate 1 are set. Can be narrowed. As a result, the number of arrangements per unit area of the electrode terminal 10a and the connection terminal 12a can be increased, and the width of each terminal 10a, 12a can be increased, so that the electrical resistance value of each terminal 10a, 12a can be reduced. Can be lowered.

この場合、フィルム基板１の接続端子部１２を透明基板５の電極端子部１０に異方導電性接着材１３を介して熱圧着により接合するので、各接続端子１２ａの間隔と各電極端子１０ａの間隔とを狭くしても、異方導電性接着材１３の導電性を有する粒子によって互いに対向する接続端子１２ａと電極端子１０ａとの導通を確実に図ることができると共に、異方導電性接着材１３の接着剤が熱圧着によって接続端子部１２と電極端子部１０とを確実に且つ強固に接合することができる。特に、フィルム基板１の接続端子部１２は、その先端部１２ｃ側を半導体チップ７の上面に接着剤１４により接合する際、接着剤１４を介して熱圧着することにより、より一層、強固に接合することができる。   In this case, since the connection terminal portion 12 of the film substrate 1 is joined to the electrode terminal portion 10 of the transparent substrate 5 by thermocompression bonding via the anisotropic conductive adhesive 13, the interval between the connection terminals 12a and the electrode terminals 10a Even if the interval is narrowed, conduction between the connecting terminal 12a and the electrode terminal 10a facing each other can be ensured by the conductive particles of the anisotropic conductive adhesive 13, and the anisotropic conductive adhesive Thus, the connection terminal portion 12 and the electrode terminal portion 10 can be reliably and firmly joined to each other by the thermocompression bonding of the 13 adhesive. In particular, the connection terminal portion 12 of the film substrate 1 is bonded more firmly by thermocompression bonding via the adhesive 14 when the tip 12c side is bonded to the upper surface of the semiconductor chip 7 by the adhesive 14. can do.

（実施形態２）
次に、図４および図５を参照して、この発明を適用した実施形態２について説明する。なお、図１〜図３に示された実施形態１と同一部分には同一符号を付して説明する。
半導体チップ７は、実施形態１のように、下面に設けられたバンプ電極７ａ、７ａ、…に加え、上面に半導体チップ７の内部回路と電気的に接続された多数のバンプ電極２０が設けられた構造になっている。そして、フィルム基板１の接合構造は、フィルム基板１の接続端子部２１の基端部２１ｃに設けられた第１接続端子２１ａを透明基板５の各電極端子１０ａに対応させると共に、フィルム基板１の接続端子部２１の先端部２１ｄに設けられた第２接続端子２１ｂを各バンプ電極２０に対応させ、この状態で接続端子部２１を電極端子部１０と半導体チップ７の上面とに異方導電性接着材１３を介して熱圧着により接合した構造で、これ以外は実施形態１とほぼ同じ構造になっている。 (Embodiment 2)
Next, a second embodiment to which the present invention is applied will be described with reference to FIGS. In addition, the same code | symbol is attached | subjected and demonstrated to the same part as Embodiment 1 shown by FIGS. 1-3.
As in the first embodiment, the semiconductor chip 7 is provided with a large number of bump electrodes 20 electrically connected to the internal circuit of the semiconductor chip 7 on the upper surface in addition to the bump electrodes 7a, 7a,. It has a structure. And the joining structure of the film board | substrate 1 makes the 1st connection terminal 21a provided in the base end part 21c of the connection terminal part 21 of the film board | substrate 1 correspond to each electrode terminal 10a of the transparent substrate 5, The second connection terminal 21b provided at the tip 21d of the connection terminal portion 21 is made to correspond to each bump electrode 20, and in this state, the connection terminal portion 21 is anisotropically conductive between the electrode terminal portion 10 and the upper surface of the semiconductor chip 7. The structure is joined by thermocompression bonding via the adhesive 13, and the other structure is substantially the same as in the first embodiment.

すなわち、フィルム基板１の接続端子部２１は、実施形態１と同様、透明基板５の電極端子部１０から半導体チップ７の上面に亘る大きさに形成され、図５に示すように、その下面に透明基板５の電極端子部１０の各電極端子１０ａにそれぞれ対応する第１接続端子２１ａと、半導体チップ７の上面に設けられた各バンプ電極２０にそれぞれ対応する第２接続端子２１ｂとが配列された構成になっている。この場合、第１接続端子２１ａは、フィルム基板１の接続配線１１に連続した状態で、接続端子部２１の基端部２１ｃ側のみに設けられており、第２接続端子２１ｂは、フィルム基板１の接続配線１１に連続した状態で、接続端子部２１の基端部２１ｃ側から先端部２１ｄ側に亘って設けられている。   That is, the connection terminal portion 21 of the film substrate 1 is formed in a size ranging from the electrode terminal portion 10 of the transparent substrate 5 to the upper surface of the semiconductor chip 7 as in the first embodiment, and on the lower surface thereof as shown in FIG. A first connection terminal 21a corresponding to each electrode terminal 10a of the electrode terminal portion 10 of the transparent substrate 5 and a second connection terminal 21b corresponding to each bump electrode 20 provided on the upper surface of the semiconductor chip 7 are arranged. It has a configuration. In this case, the first connection terminal 21 a is provided only on the base end portion 21 c side of the connection terminal portion 21 in a state continuous to the connection wiring 11 of the film substrate 1, and the second connection terminal 21 b is provided on the film substrate 1. The connection terminal 11 is provided from the base end 21c side to the tip end 21d side in a state continuous to the connection wiring 11.

このフィルム基板１の接続端子部２１を透明基板５の電極端子部１０と半導体チップ７とに接合する場合には、まず、電極端子部１０と半導体チップ７の上面におけるバンプ電極２０が設けられた部分とに未硬化の異方導電性接着材１３をそれぞれ塗布する。そして、接続端子部２１の基端部２１ｃ側の各第１接続端子２１ａを透明基板５の電極端子部１０の各電極端子１０ａに対応させ、接続端子部２１の各第２接続端子２１ｂの先端部２１ｄ側を半導体チップ７の上面の各バンプ電極２０に対応させる。   When joining the connection terminal portion 21 of the film substrate 1 to the electrode terminal portion 10 of the transparent substrate 5 and the semiconductor chip 7, first, bump electrodes 20 on the upper surfaces of the electrode terminal portion 10 and the semiconductor chip 7 were provided. An uncured anisotropic conductive adhesive 13 is applied to each portion. And each 1st connection terminal 21a by the side of the base end part 21c of the connection terminal part 21 is matched with each electrode terminal 10a of the electrode terminal part 10 of the transparent substrate 5, and the front-end | tip of each 2nd connection terminal 21b of the connection terminal part 21 The part 21 d side is made to correspond to each bump electrode 20 on the upper surface of the semiconductor chip 7.

この状態で、接続端子部２１を電極端子部１０と半導体チップ７のバンプ電極２０部分とに異方導電性接着材１３を介して熱圧着により接合する。このときには、バンプ電極２０に接合されるフィルム基板１の第２接続端子２１ｂの基端部２１ｃ側を透明基板５の電極端子１０ａに対応させずに、フィルム基板１の接続端子部２１の基端部２１ｃ側に位置する第１接続端子２１ａのみを透明基板５の電極端子部１０の電極端子１０ａに接続し、第２接続端子２１ｂのみを半導体チップ７のバンプ電極２０と接続するように、電極端子部１０とフィルム基板１の基端部２１ｃとを接合し、半導体チップ７とフィルム基板１の先端部２１ｄとを接合する。   In this state, the connection terminal portion 21 is bonded to the electrode terminal portion 10 and the bump electrode 20 portion of the semiconductor chip 7 by thermocompression bonding via the anisotropic conductive adhesive 13. At this time, the base end portion 21c side of the second connection terminal 21b of the film substrate 1 bonded to the bump electrode 20 is not made to correspond to the electrode terminal 10a of the transparent substrate 5, and the base end of the connection terminal portion 21 of the film substrate 1 is used. Only the first connection terminal 21 a located on the side of the part 21 c is connected to the electrode terminal 10 a of the electrode terminal part 10 of the transparent substrate 5, and only the second connection terminal 21 b is connected to the bump electrode 20 of the semiconductor chip 7. The terminal portion 10 and the base end portion 21c of the film substrate 1 are joined, and the semiconductor chip 7 and the tip end portion 21d of the film substrate 1 are joined.

このようなフィルム基板１の接合方法およびその接合構造によれば、実施形態１と同様の作用効果があるほか、特に半導体チップ７の上面に半導体チップ７の内部回路と接続されたバンプ電極２０を設け、このバンプ電極２０に接合されるフィルム基板１の接続端子部２１の第２接続端子２１ｂを透明基板５の電極端子部１０の電極端子１０ａに接続させずに、半導体チップ７の上面のバンプ電極２０のみに対応させて接合することにより、フィルム基板１と半導体チップ７のバンプ電極２０との電気的な接続を図ることができる。   According to the bonding method and the bonding structure of the film substrate 1 as described above, the same effects as in the first embodiment are obtained, and in particular, the bump electrode 20 connected to the internal circuit of the semiconductor chip 7 is provided on the upper surface of the semiconductor chip 7. The bumps on the upper surface of the semiconductor chip 7 are provided without connecting the second connection terminals 21b of the connection terminal portions 21 of the film substrate 1 bonded to the bump electrodes 20 to the electrode terminals 10a of the electrode terminal portions 10 of the transparent substrate 5. By bonding in correspondence with only the electrode 20, electrical connection between the film substrate 1 and the bump electrode 20 of the semiconductor chip 7 can be achieved.

この場合にも、フィルム基板１の接続端子部２１の基端部２１ｃ側に位置する第１、第２接続端子２１ａ、２１ｂを透明基板５の電極端子部１０に接合すると共に、フィルム基板１の接続端子部２１の先端部２１ｄ側を半導体チップ７の上面に接合するので、実施形態１と同様、短端子化を図っても、フィルム基板１の接続端子部２１の接合強度を高めることができる。特に、接続端子部２１の先端部２１ｄ側は、第２接続端子２１ｂがバンプ電極２０に対応した状態で異方導電性接着材１３を介して熱圧着により接合されるので、実施形態１と同様、強固に接合することができる。   Also in this case, the first and second connection terminals 21a and 21b located on the base end portion 21c side of the connection terminal portion 21 of the film substrate 1 are joined to the electrode terminal portion 10 of the transparent substrate 5, and the film substrate 1 Since the tip end 21d side of the connection terminal portion 21 is bonded to the upper surface of the semiconductor chip 7, the bonding strength of the connection terminal portion 21 of the film substrate 1 can be increased even if the terminal length is reduced as in the first embodiment. . In particular, the distal end portion 21d side of the connection terminal portion 21 is joined by thermocompression bonding via the anisotropic conductive adhesive material 13 in a state where the second connection terminal 21b corresponds to the bump electrode 20, so that it is the same as in the first embodiment. Can be firmly joined.

（実施形態３）
次に、図６を参照して、この発明を適用した実施形態３について説明する。この場合にも、図１〜図３に示された実施形態１と同一部分に同一符号を付して説明する。
半導体チップ７は、入力側配線８に接続される複数のバンプ電極７ａ、７ａ、…が下面に設けられ、複数のバンプ２５、２５、…が上面に設けられている。複数のバンプ電極７ａ、７ａ、…はそれぞれ複数のバンプ２５、２５、…に対応しており、これら対応しているバンプ電極７ａ、７ａ、…とバンプ２５、２５、…の組みは、互いに半導体チップ７の同じ内部回路に接続されている。 (Embodiment 3)
Next, a third embodiment to which the present invention is applied will be described with reference to FIG. Also in this case, the same portions as those in the first embodiment shown in FIGS.
The semiconductor chip 7 has a plurality of bump electrodes 7a, 7a,... Connected to the input side wiring 8 on the lower surface, and a plurality of bumps 25, 25,. The plurality of bump electrodes 7a, 7a,... Correspond to the plurality of bumps 25, 25,..., And the corresponding bump electrodes 7a, 7a,. The same internal circuit of the chip 7 is connected.

そして、フィルム基板１の接合構造は、フィルム基板１の接続端子部２６に多数の接続端子２６ａ、２６ａ、…を配列させて設け、これら接続端子２６ａを透明基板５の各電極端子１０ａと半導体チップ７の各バンプ２５に対応させた状態で、接続端子部２６を電極端子部１０と半導体チップ７の上面のバンプ２５部分とに異方導電性接着材１３を介して熱圧着により接合した構造で、これ以外は実施形態１とほぼ同じ構造になっている。   And the joining structure of the film board | substrate 1 arranges many connection terminals 26a, 26a, ... in the connection terminal part 26 of the film board | substrate 1, and provides these connection terminals 26a with each electrode terminal 10a of the transparent substrate 5, and a semiconductor chip. 7, the connection terminal portion 26 is joined to the electrode terminal portion 10 and the bump 25 portion on the upper surface of the semiconductor chip 7 by thermocompression bonding via the anisotropic conductive adhesive 13. Other than this, the structure is substantially the same as in the first embodiment.

すなわち、フィルム基板１の接続端子部２６は、実施形態１と同様、透明基板５の電極端子部１０から半導体チップ７の上面に亘る大きさに形成されている。この接続端子部２６の各接続端子２６ａは、図６に示すように、電極端子部１０に対応する基端部２６ｂ側から半導体チップ７の上面に対応する先端部２６ｃ側に亘って連続して設けられ、基端部２６ｂ側が透明基板５の各電極端子１０ａに対応し、先端部２６ｃ側が半導体チップ７の上面に露出して設けられた各バンプ２５に対応するように形成されている。   That is, the connection terminal portion 26 of the film substrate 1 is formed in a size ranging from the electrode terminal portion 10 of the transparent substrate 5 to the upper surface of the semiconductor chip 7 as in the first embodiment. As shown in FIG. 6, each connection terminal 26 a of the connection terminal portion 26 is continuous from the base end portion 26 b side corresponding to the electrode terminal portion 10 to the tip end portion 26 c side corresponding to the upper surface of the semiconductor chip 7. Provided, the base end portion 26 b side corresponds to each electrode terminal 10 a of the transparent substrate 5, and the tip end portion 26 c side corresponds to each bump 25 provided exposed on the upper surface of the semiconductor chip 7.

このフィルム基板１の接続端子部２６を透明基板５の電極端子部１０と半導体チップ７のバンプ２５が設けられた部分とに接合する場合には、まず、透明基板５の電極端子部１０と半導体チップ７のバンプ２５部分とに異方導電性接着材１３をそれぞれ塗布する。そして、フィルム基板１の接続端子部２６の各接続端子２６ａを透明基板５の電極端子部１０の各電極端子１０ａと半導体チップ７の上面の各バンプ２５とに対応させ、この状態で接続端子部２６を電極端子部１０と半導体チップ７の上面とに異方導電性接着材１３を介して熱圧着により接合する。   When joining the connection terminal portion 26 of the film substrate 1 to the electrode terminal portion 10 of the transparent substrate 5 and the portion of the semiconductor chip 7 where the bumps 25 are provided, first, the electrode terminal portion 10 of the transparent substrate 5 and the semiconductor are connected. The anisotropic conductive adhesive 13 is applied to the bumps 25 of the chip 7 respectively. And each connection terminal 26a of the connection terminal part 26 of the film substrate 1 is made to correspond to each electrode terminal 10a of the electrode terminal part 10 of the transparent substrate 5 and each bump 25 of the upper surface of the semiconductor chip 7, and in this state, the connection terminal part 26 is bonded to the electrode terminal portion 10 and the upper surface of the semiconductor chip 7 by thermocompression bonding via the anisotropic conductive adhesive 13.

このようなフィルム基板１の接合方法およびその接合構造によれば、実施形態１と同様の作用効果があるほか、特にフィルム基板１の接続端子部２６を透明基板５の電極端子部１０と半導体チップ７の上面とに接続するので、一方で接続不良が起きても他方で接続されていれば、液晶表示装置２を電気的に駆動することが可能となる。また、フィルム基板１の接続端子部２６の各接続端子２６ａを透明基板５の各電極端子１０ａと半導体チップ７の各バンプ２５とに対応させ、この状態で接続端子部２６を電極端子部１０と半導体チップ７の上面とに異方導電性接着材１３を介して熱圧着により接合するので、短端子化を図っても、実施形態１、２と同様、フィルム基板１の接続端子部２６の接合強度を高めることができる。この場合、特にフィルム基板１の各接続端子２６ａを透明基板５の各電極端子１０ａに接合した状態で各バンプ２５にも接合するので、より一層、強固に接合することができる。   According to such a bonding method and bonding structure of the film substrate 1, the same effects as those of the first embodiment are obtained, and in particular, the connection terminal portion 26 of the film substrate 1 is connected to the electrode terminal portion 10 of the transparent substrate 5 and the semiconductor chip. 7, the liquid crystal display device 2 can be electrically driven as long as it is connected on the other side even if a connection failure occurs on the other side. Further, each connection terminal 26a of the connection terminal portion 26 of the film substrate 1 is made to correspond to each electrode terminal 10a of the transparent substrate 5 and each bump 25 of the semiconductor chip 7, and in this state, the connection terminal portion 26 is connected to the electrode terminal portion 10. Since it is bonded to the upper surface of the semiconductor chip 7 by thermocompression bonding via the anisotropic conductive adhesive 13, bonding of the connection terminal portion 26 of the film substrate 1 is performed as in the first and second embodiments even if the terminal is shortened. Strength can be increased. In this case, in particular, since the connection terminals 26a of the film substrate 1 are bonded to the bumps 25 in a state of being bonded to the electrode terminals 10a of the transparent substrate 5, the bonding can be made even stronger.

なお、上記実施形態１〜３では、液晶表示装置２の透明基板５と回路基板（図示せず）とを接続するフィルム基板１について述べたが、これに限らず、例えば液晶表示装置以外の表示装置と回路基板とを接続する場合、または回路基板と他の回路基板とを接続する場合にも適用することができる。   In the first to third embodiments, the film substrate 1 for connecting the transparent substrate 5 and the circuit board (not shown) of the liquid crystal display device 2 is described. However, the present invention is not limited to this, and for example, displays other than the liquid crystal display device The present invention can also be applied to the case where the device and the circuit board are connected, or the case where the circuit board is connected to another circuit board.

この発明のフィルム基板の接続構造を示した平面図である。（実施形態１）It is the top view which showed the connection structure of the film board | substrate of this invention. (Embodiment 1) 図１のＡ−Ａ矢視における拡大断面図である。It is an expanded sectional view in the AA arrow of FIG. 図２のフィルム基板と透明基板とを分離した要部の拡大平面図である。It is an enlarged plan view of the principal part which isolate | separated the film substrate and transparent substrate of FIG. この発明のフィルム基板の接続構造を示した要部の拡大断面図である。（実施形態２）It is the expanded sectional view of the principal part which showed the connection structure of the film substrate of this invention. (Embodiment 2) 図４のフィルム基板と透明基板とを分離した要部の拡大平面図である。It is an enlarged plan view of the principal part which isolate | separated the film substrate and transparent substrate of FIG. この発明のフィルム基板の接続構造においてフィルム基板と透明基板とを分離した要部の拡大平面図である。（実施形態３）It is an enlarged plan view of the principal part which isolate | separated the film substrate and the transparent substrate in the connection structure of the film substrate of this invention. (Embodiment 3)

符号の説明Explanation of symbols

１ フィルム基板
２ 液晶表示装置
５ 透明基板
７ 半導体チップ
７ａ バンプ電極
８ 入力側配線
９ 出力側配線
１０ 電極端子部
１０ａ 電極端子
１１ 接続配線
１２、２１、２６ 接続端子部
１２ａ、２６ａ 接続端子
１２ｂ、２１ｃ、２６ｂ 基端部
１２ｃ、２１ｄ、２６ｃ 先端部
１３ 異方導電性接着材
１４ 接着剤
２０ バンプ電極
２１ａ 第１接続端子
２１ｂ 第２接続端子
２５ バンプ DESCRIPTION OF SYMBOLS 1 Film substrate 2 Liquid crystal display device 5 Transparent substrate 7 Semiconductor chip 7a Bump electrode 8 Input side wiring 9 Output side wiring 10 Electrode terminal part 10a Electrode terminal 11 Connection wiring 12, 21, 26 Connection terminal part 12a, 26a Connection terminal 12b, 21c , 26b Base end portion 12c, 21d, 26c Tip end portion 13 Anisotropic conductive adhesive 14 Adhesive 20 Bump electrode 21a First connection terminal 21b Second connection terminal 25 Bump

Claims (6)

配線基板の上に設けられた電極端子部の電極端子に電気的に接続された半導体チップの上面にフィルム基板の先端部を接合するとともに、前記フィルム基板の接続端子が設けられている基端部を前記電極端子部に接合することを特徴とするフィルム基板の接合方法。   A base end portion where the tip end portion of the film substrate is bonded to the upper surface of the semiconductor chip electrically connected to the electrode terminal of the electrode terminal portion provided on the wiring substrate, and the connection terminal of the film substrate is provided The film substrate is bonded to the electrode terminal portion. 少なくとも前記フィルム基板の前記接続端子が設けられている前記基端部を前記配線基板の前記電極端子部に異方導電性接着材を介して熱圧着により接合することを特徴とする請求項１に記載のフィルム基板の接合方法。   2. The base end portion provided with at least the connection terminal of the film substrate is joined to the electrode terminal portion of the wiring substrate by thermocompression bonding through an anisotropic conductive adhesive. The bonding method of the film substrate as described. 前記異方導電性接着材は、絶縁性を有する接着剤中に導電性を有する粒子を混入させたものであり、絶縁性を有する前記接着剤は熱硬化性樹脂からなることを特徴とする請求項２に記載のフィルム基板の接合方法。   The anisotropic conductive adhesive is obtained by mixing conductive particles in an insulating adhesive, and the insulating adhesive is made of a thermosetting resin. Item 3. A method for bonding a film substrate according to Item 2. 配線基板の上に設けられた電極端子部の電極端子に電気的に接続された半導体チップの上面にフィルム基板の先端部が接合されているとともに、前記フィルム基板の接続端子が設けられている基端部が前記電極端子部に接合されていることを特徴とするフィルム基板の接合構造。   The front end portion of the film substrate is bonded to the upper surface of the semiconductor chip electrically connected to the electrode terminal of the electrode terminal portion provided on the wiring substrate, and the connection terminal of the film substrate is provided. An end part is joined to the electrode terminal part. 前記フィルム基板の前記接続端子が設けられている接続端子部には、前記配線基板の前記電極端子から前記半導体チップの前記上面に亘って前記接続端子が設けられ、前記半導体チップの前記上面には、前記フィルム基板の前記接続端子の少なくとも一部が対応して接合されるバンプが設けられていることを特徴とする請求項４に記載のフィルム基板の接合構造。   The connection terminal portion provided with the connection terminal of the film substrate is provided with the connection terminal extending from the electrode terminal of the wiring substrate to the upper surface of the semiconductor chip, and on the upper surface of the semiconductor chip. The bump structure to which at least one part of the said connection terminal of the said film substrate is correspondingly bonded is provided, The bonding structure of the film substrate of Claim 4 characterized by the above-mentioned. 前記フィルム基板の前記接続端子部は、前記配線基板の前記電極端子と前記半導体チップの前記バンプが設けられた前記上面とに異方導電性接着材を介して熱圧着により接合されていることを特徴とする請求項５に記載のフィルム基板の接合構造。

The connection terminal portion of the film substrate is bonded to the electrode terminal of the wiring substrate and the upper surface provided with the bump of the semiconductor chip by thermocompression bonding via an anisotropic conductive adhesive. The film substrate bonding structure according to claim 5, wherein:

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WO2020071027A1 (en) * 2018-10-04 2020-04-09 日本航空電子工業株式会社 Method for producing mount structure of electronic component, mount structure of electronic component, electronic module and wiring sheet

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Publication number Priority date Publication date Assignee Title
JP2017514304A (en) * 2014-04-16 2017-06-01 クアルコム，インコーポレイテッド A die package comprising a die-to-wire connector and a wire-to-die connector configured to couple to the die package
WO2017043480A1 (en) * 2015-09-09 2017-03-16 株式会社ソシオネクスト Semiconductor package
WO2020071027A1 (en) * 2018-10-04 2020-04-09 日本航空電子工業株式会社 Method for producing mount structure of electronic component, mount structure of electronic component, electronic module and wiring sheet
TWI802759B (en) * 2018-10-04 2023-05-21 日商日本航空電子工業股份有限公司 Manufacturing method of mounting structure of electronic parts, mounting structure of electronic parts, electronic module, wiring sheet
US11881470B2 (en) 2018-10-04 2024-01-23 Japan Aviation Electronics Industry, Limited Method for manufacturing mounting structure for electronic component, mounting structure for electronic component, electronic module, and wiring sheet

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