JP2009123577A - Substrate heating device - Google Patents

Substrate heating device Download PDF

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JP2009123577A
JP2009123577A JP2007297649A JP2007297649A JP2009123577A JP 2009123577 A JP2009123577 A JP 2009123577A JP 2007297649 A JP2007297649 A JP 2007297649A JP 2007297649 A JP2007297649 A JP 2007297649A JP 2009123577 A JP2009123577 A JP 2009123577A
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substrate
plate
heating element
resistance heating
base material
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Yasumasa Suzuki
康正 鈴木
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Ulvac Inc
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Ulvac Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate heating device for keeping the temperature of a substrate uniform both when the temperature of the substrate rises and when the temperature of the substrate is stabilized. <P>SOLUTION: The substrate heating device includes a plate-like base material, and a belt-like resistance heating element formed along the under face of the plate-like base material to generate heat with energization. A cross section S1 of the belt-like resistance heating element at its part facing the center of the plate-like base material is larger than a cross section S2 of the belt-like resistance heating element at its part facing the periphery of the plate-like base material. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、板状の基板、例えば、半導体ウエハ、プリント基板、ガラス基板等を加熱する基板加熱装置に関し、更に詳しくは基板を均一に加熱することができる基板加熱装置に関する。   The present invention relates to a substrate heating apparatus that heats a plate-like substrate, for example, a semiconductor wafer, a printed board, a glass substrate, and the like, and more particularly to a substrate heating apparatus that can uniformly heat the substrate.

例えば、半導体ウエハの製造においては、ＣＶＤ膜形成工程、エピタキシャル膜形成工程、酸化膜形成工程、拡散膜形成工程等、熱処理を必要とする工程が数多く存在している。半導体ウエハ等板状の基板を加熱する基板加熱装置の典型例として、下記特許文献１及び２に開示されているものを挙げることができる。これらの基板加熱装置は、板状基材と、板状基材の下面に沿って形成された通電により発熱する帯状抵抗発熱体とを備えている。帯状抵抗発熱体は板状基材の下面側において同心円状乃至渦巻状に形成されている。そして、帯状抵抗発熱体は板状基材のどの部位においても均一の厚さ、均一の幅になるように焼き付けて形成されている。
特開２００１−３１３２４９号公報 特開２００１−２０３１５６号公報 For example, in the manufacture of a semiconductor wafer, there are many processes that require heat treatment, such as a CVD film forming process, an epitaxial film forming process, an oxide film forming process, and a diffusion film forming process. As typical examples of a substrate heating apparatus for heating a plate-like substrate such as a semiconductor wafer, those disclosed in Patent Documents 1 and 2 below can be given. These substrate heating devices include a plate-like base material and a strip-like resistance heating element that generates heat by energization formed along the lower surface of the plate-like base material. The strip-shaped resistance heating element is formed concentrically or spirally on the lower surface side of the plate-like substrate. The belt-like resistance heating element is formed by baking so as to have a uniform thickness and a uniform width in any part of the plate-like substrate.
JP 2001-313249 A JP 2001-203156 A

この種の基板加熱装置において、温度均一性は、工程内の温度上昇時及び温度安定時でそれぞれ維持されている必要があるが、基板温度の上昇時の熱移動は主に基板に対して垂直方向に起こり、基板温度の安定時の熱移動は主に基板に対して平行に起こる。そのため、基板温度の上昇時、及び基板温度の安定時のいずれの場合にも基板温度の温度均一性を維持するためには、基板加熱装置に２通り以上の発熱分布を持たせる必要がある。しかし、前記の先行技術による基板加熱装置では、帯状抵抗発熱体が板状基材のどの部位においても均一厚さ、均一幅であるため一通の発熱分布しか形成されない。   In this type of substrate heating apparatus, the temperature uniformity needs to be maintained when the temperature rises during the process and when the temperature is stable, but the heat transfer when the substrate temperature rises is mainly perpendicular to the substrate. The heat transfer when the substrate temperature is stable occurs mainly parallel to the substrate. Therefore, in order to maintain the temperature uniformity of the substrate temperature both when the substrate temperature rises and when the substrate temperature is stable, the substrate heating device needs to have two or more types of heat generation distribution. However, in the above-described substrate heating apparatus according to the prior art, since the strip-like resistance heating element has a uniform thickness and a uniform width at any part of the plate-like base material, only one heat generation distribution is formed.

本発明は、前記の課題に鑑みてなされたものであり、基板温度の上昇時と、基板温度の安定時との両場合で基板の温度均一性を維持することができる基板加熱装置を提供することを目的としている。   The present invention has been made in view of the above problems, and provides a substrate heating apparatus capable of maintaining temperature uniformity of a substrate both when the substrate temperature rises and when the substrate temperature is stable. The purpose is that.

前記の目的を達成するために、本発明による基板加熱装置は、板状基材と、板状基材の下面に沿って形成された通電により発熱する帯状抵抗発熱体とを備え、 板状基材の中心部に面する部位の帯状抵抗発熱体における断面Ｓ１が板状基材の周辺部に面する部位の帯状抵抗発熱体における断面Ｓ２より大きいことを特徴としている。   In order to achieve the above object, a substrate heating apparatus according to the present invention includes a plate-like base material, and a belt-like resistance heating element that generates heat by energization formed along the lower surface of the plate-like base material. The section S1 of the strip-shaped resistance heating element at the portion facing the center of the material is characterized by being larger than the section S2 of the strip-shaped resistance heating element at the portion facing the peripheral portion of the plate-like substrate.

本発明の一実施形態によれば、帯状抵抗発熱体の幅Ｗが一定であり、 板状基材の周辺部に面する部位に比較して板状基材の中心部に面する部位において帯状抵抗発熱体の厚さＤが大きくなるように構成され得る。   According to one embodiment of the present invention, the width W of the belt-like resistance heating element is constant, and the belt-like portion is formed at the portion facing the central portion of the plate-like substrate as compared with the portion facing the peripheral portion of the plate-like substrate. The resistance heating element can be configured to have a large thickness D.

板状基材の周辺部に面する部位における厚さ前記帯状抵抗発熱体の厚さは前記板状基材の中心部に面する部位における厚さの半分に設定され得、この場合、帯状抵抗発熱体の厚さＤが、 板状基材の中心部に面する部位から板状基材の周辺部に面する部位に向って直線状に連続的して或いは階段状に薄くなるように構成され得る。   The thickness at the part facing the peripheral part of the plate-like base material The thickness of the strip-like resistance heating element can be set to half the thickness at the part facing the central part of the plate-like base material. The thickness D of the heating element is configured so that it continuously decreases linearly or in steps from the portion facing the central portion of the plate-like substrate toward the portion facing the peripheral portion of the plate-like substrate. Can be done.

また、本発明による基板加熱装置においては、帯状抵抗発熱体は板状基材の下面に沿って全面に渡って蛇行形状に形成してもよい。   In the substrate heating apparatus according to the present invention, the belt-like resistance heating element may be formed in a meandering shape over the entire surface along the lower surface of the plate-like base material.

さらに、本発明による基板加熱装置においては、板状基材はＰＢＮから構成され得る。   Furthermore, in the substrate heating apparatus according to the present invention, the plate-like substrate can be made of PBN.

本発明による基板加熱装置においては、板状基材の中心部に面する部位の帯状抵抗発熱体における断面Ｓ１を板状基材の周辺部に面する部位の帯状抵抗発熱体における断面Ｓ２より大きいくしたことにより、 板状基材の周辺部に面する部位に比較して前記板状基材の中心部に面する部位において帯状抵抗発熱体の抵抗率を小さくすることができ、その結果、基板加熱装置に２通り以上の発熱分布を持たせることができ、基板温度の上昇時と、基板温度の安定時との両場合において基板の温度均一性を維持することができる。   In the substrate heating apparatus according to the present invention, the cross section S1 of the strip-shaped resistive heating element at the portion facing the center of the plate-like base material is larger than the cross-section S2 of the strip-shaped resistive heating element at the portion facing the peripheral portion of the plate-like base material. By reducing the resistivity of the belt-like resistance heating element in the portion facing the central portion of the plate-like base material compared to the portion facing the peripheral portion of the plate-like base material, The substrate heating apparatus can have two or more heat generation distributions, and the temperature uniformity of the substrate can be maintained both when the substrate temperature is rising and when the substrate temperature is stable.

本発明による基板加熱装置において、帯状抵抗発熱体の幅Ｗを一定とし、板状基材の周辺部に面する部位に比較して板状基材の中心部に面する部位において帯状抵抗発熱体の厚さＤを大きく構成した場合には、帯状抵抗発熱体の厚さＤを一定とし、板状基材の周辺部に面する部位に比較して板状基材の中心部に面する部位において帯状抵抗発熱体の幅Ｗを大きくした場合に比較して温度分布の調整及び加工が容易となる。   In the substrate heating apparatus according to the present invention, the width W of the belt-like resistance heating element is constant, and the belt-like resistance heating element is located at the portion facing the central portion of the plate-like substrate as compared with the portion facing the peripheral portion of the plate-like substrate. When the thickness D of the plate-like substrate is made large, the thickness D of the belt-like resistance heating element is made constant, and the portion facing the central portion of the plate-like substrate is compared with the portion facing the peripheral portion of the plate-like substrate. As compared with the case where the width W of the belt-like resistance heating element is increased, the temperature distribution can be easily adjusted and processed.

以下添付図面を参照して本発明による基板過熱装置の実施形態について説明する。   Embodiments of a substrate heating apparatus according to the present invention will be described below with reference to the accompanying drawings.

図１には、本発明の一実施形態による基板加熱装置の要部を概略的に示し、１はヒータハウジングであり、このヒータハウジング１内に第１のヒータリフレクタ２及び第２のヒータリフレクタ３が同心状に配置されている。これら二つのヒータリフレクタ２、３は盆形を成し、それぞれ上面は開口している。第１のヒータリフレクタ２は、ヒータハウジング１との間に絶縁管４を介在させてボルト５及びナット６によりヒータハウジング１に離間して支持されている。なお図面には一組の絶縁管４、ボルト５及びナット６が示されているが、かかる支持手段は当然ヒータリフレクタ２の周囲部に沿って複数設けられる。第２のヒータリフレクタ３は、第１のヒータリフレクタ２との間に絶縁管７を介在させてボルト８及びナット９により第１のヒータリフレクタ２に対して離間して支持されている。絶縁管７、ボルト８及びナット９も図面には一組だけが示されているが、当然複数組設けられる。   FIG. 1 schematically shows a main part of a substrate heating apparatus according to an embodiment of the present invention. Reference numeral 1 denotes a heater housing, and a first heater reflector 2 and a second heater reflector 3 are provided in the heater housing 1. Are arranged concentrically. These two heater reflectors 2 and 3 form a basin shape, and each upper surface is opened. The first heater reflector 2 is supported by being separated from the heater housing 1 by bolts 5 and nuts 6 with an insulating tube 4 interposed between the first heater reflector 2 and the heater housing 1. In the drawing, a set of insulating tubes 4, bolts 5 and nuts 6 are shown, but a plurality of such support means are naturally provided along the periphery of the heater reflector 2. The second heater reflector 3 is supported separately from the first heater reflector 2 by bolts 8 and nuts 9 with an insulating tube 7 interposed between the second heater reflector 3 and the first heater reflector 2. Although only one set of the insulating tube 7, the bolt 8 and the nut 9 is shown in the drawing, a plurality of sets are naturally provided.

第２のヒータリフレクタ３上には、絶縁カラー１０を介して第１のヒータ押え部材１１が配置され、この第１のヒータ押え部材１１上に当接して第２のヒータ押え部材１２が設けられている。第１のヒータリフレクタ２、第２のヒータリフレクタ３及び第１のヒータ押え部材１１は図示したように、互いに所要の間隔をあけてボルト８及びナット９によって相互に組み立てられている。第１のヒータ押え部材１１は図示実施形態ではモリブデンで構成され、また第２のヒータ押え部材１２は、耐熱性、熱導電性、耐食性に優れた熱分解窒化ホウ素（ＰＢＮ）で構成されている。   A first heater pressing member 11 is disposed on the second heater reflector 3 via an insulating collar 10, and a second heater pressing member 12 is provided in contact with the first heater pressing member 11. ing. The first heater reflector 2, the second heater reflector 3, and the first heater pressing member 11 are assembled to each other by bolts 8 and nuts 9 at a predetermined interval as shown in the figure. In the illustrated embodiment, the first heater holding member 11 is made of molybdenum, and the second heater holding member 12 is made of pyrolytic boron nitride (PBN) having excellent heat resistance, thermal conductivity, and corrosion resistance. .

第２のヒータ押え部材１２上には、均熱板を成す板状基材１３の下面に沿って通電により発熱する帯状抵抗発熱体１４が形成されている。板状基材１３は、第２のヒータ押え部材１２と同様に、耐熱性、熱導電性、耐食性に優れた熱分解窒化ホウ素（ＰＢＮ）で構成されている。また板状基材１３の上面には、加熱すべき基板（図示していない）が装着される。帯状抵抗発熱体１４は幅Ｗであり、その全長にわたって一様である。帯状抵抗発熱体１４の両端は絶縁管１５内にのびるリード線を介して外部電源（図示していない）に接続される。   On the second heater pressing member 12, a strip-like resistance heating element 14 that generates heat by energization is formed along the lower surface of the plate-like substrate 13 that forms a soaking plate. The plate-like substrate 13 is made of pyrolytic boron nitride (PBN) having excellent heat resistance, thermal conductivity, and corrosion resistance, like the second heater pressing member 12. A substrate (not shown) to be heated is mounted on the upper surface of the plate-like base material 13. The strip-like resistance heating element 14 has a width W and is uniform over its entire length. Both ends of the strip-like resistance heating element 14 are connected to an external power source (not shown) via lead wires extending in the insulating tube 15.

図２〜図４には帯状抵抗発熱体の一実施形態を示す。図２の平面図に示すように、幅Ｗの帯状抵抗発熱体２０は円板状の板状基材（図１参照）の下側面の全領域にわたって帯状抵抗発熱体２０の幅Ｗのほぼ半分の間隔で蛇行形状に配列されている。円２１で示す板状基材の中心部に位置する帯状抵抗発熱体２０の部位の断面積Ｓ１が円２１の外側の板状基材の周辺部に位置する帯状抵抗発熱体２０の部位の断面積Ｓ２より大きくなるように、円２１で示す板状基材の中心部に位置する帯状抵抗発熱体２０の部位の厚さＤ１は円２１の外側の板状基材の周辺部に位置する帯状抵抗発熱体２０の部位の厚さＤ２のほぼ二倍に形成されている。この構成により、板状基材の周辺部に面する帯状抵抗発熱体２０の部位に比較して前記板状基材の中心部に面する帯状抵抗発熱体２０の部位における抵抗率は小さくなり、その結果、帯状抵抗発熱体２０への通電時による発熱量は、板状基材の中心部に位置する帯状抵抗発熱体２０の部位において少なくなり、中心部位と周辺部位とで基板加熱装置に２通り以上の発熱分布が得られ、基板温度の上昇時と、基板温度の安定時との両場合を通して基板における温度分布を均一に維持することができる。   2 to 4 show an embodiment of a strip-like resistance heating element. As shown in the plan view of FIG. 2, the band-shaped resistance heating element 20 having a width W is substantially half the width W of the band-shaped resistance heating element 20 over the entire area of the lower surface of the disk-shaped plate-like substrate (see FIG. 1). Are arranged in a meandering shape at intervals of. The cross-sectional area S1 of the portion of the belt-like resistance heating element 20 located at the center of the plate-like substrate indicated by a circle 21 is a break of the portion of the belt-like resistance heating element 20 located at the periphery of the plate-like substrate outside the circle 21. The thickness D1 of the portion of the belt-like resistance heating element 20 located at the center of the plate-like substrate indicated by the circle 21 so as to be larger than the area S2 is a belt-like shape located at the periphery of the plate-like substrate outside the circle 21. The resistance heating element 20 is formed approximately twice as thick as the thickness D2. With this configuration, the resistivity in the portion of the belt-like resistance heating element 20 facing the central portion of the plate-like base material is smaller than the portion of the belt-like resistance heating element 20 facing the peripheral portion of the plate-like base material, As a result, the amount of heat generated during energization of the belt-like resistance heating element 20 is reduced at the site of the belt-like resistance heating element 20 located at the center of the plate-like substrate, and 2 is applied to the substrate heating apparatus at the central part and the peripheral part. The above-described heat generation distribution can be obtained, and the temperature distribution in the substrate can be maintained uniformly throughout both the case where the substrate temperature rises and the case where the substrate temperature is stable.

図５〜図７には帯状抵抗発熱体の別の実施形態を示す。図５の平面図に示すように、幅Ｗの帯状抵抗発熱体３０は円板状の板状基材（図１参照）の下側面の全領域にわたって帯状抵抗発熱体３０の幅Ｗのほぼ半分の間隔で蛇行形状に配列されている。この場合、帯状抵抗発熱体３０の厚さは、板状基材の中心部に対応した部位から板状基材の周辺部に対応した部位へ向って直線的に低減し、板状基材の中心部に位置する帯状抵抗発熱体３０の部位の厚さＤ１は板状基材の周辺部に位置する帯状抵抗発熱体３０の部位の厚さＤ２のほぼ二倍に形成されている。これにより、帯状抵抗発熱体３０の断面積は、板状基材の中心部に位置する帯状抵抗発熱体３０の部位の断面積Ｓ１から板状基材の周辺部に位置する帯状抵抗発熱体３０の部位の断面積Ｓ２まで外方へ向って漸減している。   5 to 7 show another embodiment of the strip-like resistance heating element. As shown in the plan view of FIG. 5, the strip-shaped resistance heating element 30 having a width W is substantially half the width W of the strip-shaped resistance heating element 30 over the entire area of the lower surface of the disk-shaped plate-like substrate (see FIG. 1). Are arranged in a meandering shape at intervals of. In this case, the thickness of the strip-like resistance heating element 30 decreases linearly from the portion corresponding to the central portion of the plate-like substrate toward the portion corresponding to the peripheral portion of the plate-like substrate, The thickness D1 of the portion of the belt-like resistance heating element 30 located in the central portion is formed approximately twice the thickness D2 of the portion of the belt-like resistance heating element 30 located in the peripheral portion of the plate-like base material. Thereby, the cross-sectional area of the strip-shaped resistance heating element 30 is changed from the cross-sectional area S1 of the portion of the strip-shaped resistance heating element 30 located at the center of the plate-shaped substrate to the strip-shaped resistance heating element 30 positioned at the peripheral portion of the plate-shaped substrate. It gradually decreases outward until the cross-sectional area S2 of this part.

このように構成したことにより、図５〜図７に示す実施形態の場合と同様に、板状基材の周辺部に面する帯状抵抗発熱体３０の部位に比較して前記板状基材の中心部に面する帯状抵抗発熱体３０の部位における抵抗率は小さくなり、その結果、帯状抵抗発熱体３０への通電時による発熱量は、板状基材の周辺部から中心部へ向って漸減し、中心部位と周辺部位とで基板加熱装置に２通り以上の発熱分布を持たせることができ、基板温度の上昇時と、基板温度の安定時との両場合において基板の温度均一性を維持することができる。   By comprising in this way, like the case of embodiment shown in FIGS. 5-7, compared with the site | part of the strip | belt-shaped resistance heating element 30 facing the peripheral part of a plate-shaped base material, it is the said plate-shaped base material. The resistivity at the portion of the belt-like resistance heating element 30 facing the center portion is reduced, and as a result, the amount of heat generated when the belt-like resistance heating body 30 is energized gradually decreases from the peripheral portion to the center portion of the plate-like substrate. In addition, the substrate heating device can have two or more types of heat distribution at the central part and the peripheral part, and the temperature uniformity of the substrate is maintained both when the substrate temperature is rising and when the substrate temperature is stable. can do.

前述のように、本発明においては、使用する帯状抵抗発熱体２０、３０はそれぞれ、幅が一定であり、厚さが周辺部に向って減少するように構成したことにより、帯状抵抗発熱体自体の加工が容易となり、しかも温度分布の調整も容易となる。また一定の幅の帯状抵抗発熱体２０、３０を一定の間隔で配列して設けているために、従来のように中央部で疎とし、周辺部で密とするような複雑なパターンで構成する必要がなくなり、発熱体の製作、従って基板加熱装置の製造を比較的容易に行なうことができる。   As described above, in the present invention, the strip-like resistance heating elements 20 and 30 to be used have a constant width and a thickness that decreases toward the peripheral portion. This makes it easy to adjust the temperature distribution. In addition, since the strip-like resistance heating elements 20 and 30 having a certain width are arranged at regular intervals, they are configured with a complicated pattern that is sparse in the central portion and dense in the peripheral portion as in the prior art. This eliminates the need to manufacture the heating element, and thus manufacture the substrate heating apparatus relatively easily.

本発明において使用する帯状抵抗発熱体２０、３０の材料としては、Ｔａ、Ｍｏ、グラファイトなどを挙げることができる。 Examples of the material of the strip-like resistance heating elements 20 and 30 used in the present invention include Ta, Mo, and graphite.

ところで、図示実施形態では、加熱装置は円形に形成しているが、当然過熱すべき基板の形状に合わせて矩形、長方形などの多角形に構成することも可能である。また、使用する帯状抵抗発熱体も図示実施形態のように断面が四角形である必要はなく四角形以外の多角形や楕円形又は円形のものも使用することができる。   By the way, in the illustrated embodiment, the heating device is formed in a circular shape, but naturally, it can also be configured in a polygonal shape such as a rectangle or a rectangle in accordance with the shape of the substrate to be heated. Further, the strip-like resistance heating element to be used does not need to have a square cross section as in the illustrated embodiment, and a polygon, an ellipse, or a circle other than a square can be used.

図２〜図４に示す実施形態において、中央部から周辺部へ向って二段階以上の段差を持って帯状抵抗発熱体の厚さをＤ１からＤ２まで変えるように構成してもよい。   In the embodiment shown in FIGS. 2 to 4, the thickness of the belt-like resistance heating element may be changed from D1 to D2 with two or more steps from the center to the periphery.

本発明の一実施形態による基板加熱装置の要部を示す概略断面図。1 is a schematic cross-sectional view showing a main part of a substrate heating apparatus according to an embodiment of the present invention. 図１の装置に使用される帯状抵抗発熱体の一実施形態を示す概略平面図。The schematic plan view which shows one Embodiment of the strip | belt-shaped resistance heating element used for the apparatus of FIG. 図２の帯状抵抗発熱体の矢印ＩＩ−ＩＩに沿った概略断面図。The schematic sectional drawing in alignment with arrow II-II of the strip | belt-shaped resistance heating element of FIG. 図２の帯状抵抗発熱体の矢印ＩＩＩ−ＩＩＩに沿った概略断面図。FIG. 3 is a schematic cross-sectional view of the belt-like resistance heating element of FIG. 2 along arrows III-III. 図１の装置に使用される帯状抵抗発熱体の別の実施形態を示す概略平面図。The schematic plan view which shows another embodiment of the strip | belt-shaped resistance heating element used for the apparatus of FIG. 図５の帯状抵抗発熱体の矢印ＩＶ−ＩＶに沿った概略断面図。The schematic sectional drawing in alignment with arrow IV-IV of the strip | belt-shaped resistance heating element of FIG. 図５の帯状抵抗発熱体の矢印Ｖ−Ｖに沿った概略断面図。FIG. 6 is a schematic cross-sectional view along the arrow VV of the strip-like resistance heating element in FIG. 5.

符号の説明Explanation of symbols

１：ヒータハウジング
２：第１のヒータリフレクタ
３：第２のヒータリフレクタ
４：絶縁管
５：ボルト
６：ナット
７：絶縁管
８：ボルト
９：ナット
１０：絶縁カラー
１１：第１のヒータ押え部材
１２：第２のヒータ押え部材
１３：板状基材
１４：帯状抵抗発熱体
１５：絶縁管
２０：帯状抵抗発熱体
３０：帯状抵抗発熱体 1: Heater housing 2: First heater reflector 3: Second heater reflector 4: Insulating tube 5: Bolt 6: Nut 7: Insulating tube 8: Bolt 9: Nut 10: Insulating collar 11: First heater pressing member 12: Second heater pressing member 13: Plate-like base material 14: Strip-like resistance heating element 15: Insulating tube 20: Strip-like resistance heating element 30: Strip-like resistance heating element

Claims (7)

板状基材と、前記板状基材の下面に沿って形成された通電により発熱する帯状抵抗発熱体とを備えた基板加熱装置において、
前記板状基材の中心部に面する部位の帯状抵抗発熱体における断面積Ｓ１が前記板状基材の周辺部に面する部位の帯状抵抗発熱体における断面積Ｓ２より大きいことを特徴とする基板加熱装置。 In a substrate heating apparatus comprising a plate-like base material and a belt-like resistance heating element that generates heat by energization formed along the lower surface of the plate-like base material,
The cross-sectional area S1 of the strip-shaped resistive heating element at the portion facing the center of the plate-like base material is larger than the cross-sectional area S2 of the strip-shaped resistive heating element at the portion facing the peripheral portion of the plate-like base material. Substrate heating device. 前記帯状抵抗発熱体の幅Ｗが一定であり、 前記板状基材の周辺部に面する部位に比較して前記板状基材の中心部に面する部位において前記帯状抵抗発熱体の厚さＤが大きいことを特徴とする請求項１記載の基板加熱装置。   The width W of the belt-like resistance heating element is constant, and the thickness of the belt-like resistance heating element at the portion facing the center of the plate-like substrate as compared to the portion facing the peripheral portion of the plate-like substrate. 2. The substrate heating apparatus according to claim 1, wherein D is large. 前記板状基材の周辺部に面する部位における厚さ前記帯状抵抗発熱体の厚さが前記板状基材の中心部に面する部位における厚さの半分であることを特徴とする請求項１記載の基板加熱装置。   The thickness at the part facing the peripheral part of the plate-like base material The thickness of the strip-like resistance heating element is half the thickness at the part facing the central part of the plate-like base material. The substrate heating apparatus according to 1. 前記帯状抵抗発熱体の厚さＤが、前記板状基材の中心部に面する部位から前記板状基材の周辺部に面する部位に向って直線状に連続的に変化していることを特徴とする請求項２又は請求項３記載の基板加熱装置。   The thickness D of the strip-like resistance heating element continuously changes linearly from a portion facing the central portion of the plate-like substrate toward a portion facing the peripheral portion of the plate-like substrate. The substrate heating apparatus according to claim 2 or claim 3, wherein 前記帯状抵抗発熱体の厚さＤが、前記板状基材の中心部に面する部位から前記板状基材の周辺部に面する部位に向って階段状に変化していることを特徴とする請求項２又は請求項３記載の基板加熱装置。   The thickness D of the strip-like resistance heating element is changed in a stepped manner from a portion facing the central portion of the plate-like substrate toward a portion facing the peripheral portion of the plate-like substrate. The substrate heating apparatus according to claim 2 or claim 3 to be performed. 前記帯状抵抗発熱体が前記板状基材の下面に沿って全面に渡って蛇行形状に形成されている請求項１又は請求項２記載の基板加熱装置。   3. The substrate heating apparatus according to claim 1, wherein the belt-like resistance heating element is formed in a meandering shape over the entire surface along the lower surface of the plate-like substrate. 前記板状基材がＰＢＮから構成されることを特徴とする請求項１〜請求項６いずれか一項 記載の基板加熱装置。   The said plate-shaped base material is comprised from PBN, The substrate heating apparatus as described in any one of Claims 1-6 characterized by the above-mentioned.
JP2007297649A 2007-11-16 2007-11-16 Substrate heating device Pending JP2009123577A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101562755B1 (en) 2012-03-16 2015-10-22 에베 그룹 에. 탈너 게엠베하 Pressure transmitting device for bonding chips onto a substrate
KR20220040175A (en) * 2020-09-23 2022-03-30 주식회사 에스엠지머티리얼즈 Substrate process processing heater

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WO2000069219A1 (en) * 1999-05-07 2000-11-16 Ibiden Co., Ltd. Hot plate and method of producing the same
JP2003123944A (en) * 2001-10-05 2003-04-25 Toshiba Ceramics Co Ltd Resistance heating foil element, method of manufacturing the same and flat heater
JP2007134088A (en) * 2005-11-08 2007-05-31 Shin Etsu Chem Co Ltd Ceramic heater and manufacturing method of ceramic heater

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JPH04249090A (en) * 1991-02-05 1992-09-04 Ricoh Co Ltd Sheet-form heat emitting element
WO2000069219A1 (en) * 1999-05-07 2000-11-16 Ibiden Co., Ltd. Hot plate and method of producing the same
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101562755B1 (en) 2012-03-16 2015-10-22 에베 그룹 에. 탈너 게엠베하 Pressure transmitting device for bonding chips onto a substrate
KR20220040175A (en) * 2020-09-23 2022-03-30 주식회사 에스엠지머티리얼즈 Substrate process processing heater
KR102495458B1 (en) * 2020-09-23 2023-02-03 주식회사 에스엠지머티리얼즈 Substrate process processing heater

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