JP2009123377A - High-frequency processor - Google Patents

High-frequency processor Download PDF

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JP2009123377A
JP2009123377A JP2007293287A JP2007293287A JP2009123377A JP 2009123377 A JP2009123377 A JP 2009123377A JP 2007293287 A JP2007293287 A JP 2007293287A JP 2007293287 A JP2007293287 A JP 2007293287A JP 2009123377 A JP2009123377 A JP 2009123377A
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power supply
frequency power
supply means
high frequency
frequency
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JP5142368B2 (en
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Makoto Mihara
誠 三原
Tomotaka Nobue
等隆 信江
Yoshiharu Omori
義治 大森
Kenji Yasui
健治 安井
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Panasonic Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H05B6/705—Feed lines using microwave tuning

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  • Control Of High-Frequency Heating Circuits (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-frequency processor capable of reducing cooking time with improvement of heating efficiency. <P>SOLUTION: Since the high-frequency processor includes a first high-frequency power supplying means 1A and a second high-frequency power supplying means 1B for supplying high frequencies generated by oscillation parts 2a, 2b to a heat chamber 8 by power feeding parts 7a to 7d, an object to be heated 9 in the heating chamber 8 is detected by power detecting parts 6a to 6d provided at: the first high-frequency power supplying means 1A; and the second high-frequency power supplying means 1B. The object to be heated 9 can be heated under an optimal condition by the first high-frequency power supplying means 1A and the second high-frequency power supplying means 1B, thereby improving heating performance. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、被加熱物を加熱することができる高周波電力供給手段を備えた高周波処理装置に関するものである。   The present invention relates to a high-frequency treatment apparatus including a high-frequency power supply unit that can heat an object to be heated.

従来の高周波を用いた高周波加熱装置は、半導体発振部と、発振部の出力を複数に分割する分配部と、分配された出力をそれぞれ増幅する複数の増幅部と、増幅部の出力を再合成する合成部とを有し、分配部と増幅部との間に位相器を設けたものが知られている（例えば特許文献１参照）。   A conventional high-frequency heating device using high frequency is a semiconductor oscillation unit, a distribution unit that divides the output of the oscillation unit into a plurality of units, a plurality of amplification units that amplify the distributed output, and the output of the amplification unit. There is a known combination including a combining unit and a phase shifter provided between the distributing unit and the amplifying unit (see, for example, Patent Document 1).

前述した特許文献１に記載の高周波加熱装置では、位相器はダイオードのオンオフ特性により高周波の通過線路長を切り替える構成としている。また、合成部は９０度および１８０度ハイブリッドを用いることで合成部の出力を２つにすることができ、位相器を制御することで２出力の電力比を変化させたり、２出力間の位相を同相あるいは逆相にさせたりすることができるとされている。また、この種の高周波加熱装置は、一般には電子レンジに代表されるように高周波発生部にマグネトロンと称される真空管を用いている。
特開昭５６−１３２７９３号公報 In the high-frequency heating device described in Patent Document 1 described above, the phase shifter is configured to switch the high-frequency pass line length by the on / off characteristics of the diode. In addition, the synthesis unit can use two 90 degree and 180 degree hybrids, so that the output of the synthesis unit can be made two. By controlling the phase shifter, the power ratio of the two outputs can be changed, or the phase between the two outputs can be changed. Can be in-phase or out-of-phase. In addition, this type of high-frequency heating apparatus generally uses a vacuum tube called a magnetron in a high-frequency generator as represented by a microwave oven.
JP 56-132793 A

ところで、近年、高周波加熱装置を用いた調理を行う際に、無駄な電力を消費することなく短時間で所望の調理を行うために、加熱効率の向上が求められている。   By the way, in recent years, when cooking using a high-frequency heating apparatus, in order to perform desired cooking in a short time without consuming wasteful electric power, improvement in heating efficiency is required.

本発明は、前述した要望を満たすためになされたものであり、その目的は、加熱効率を向上させることにより調理時間を短縮できる高周波処理装置を提供することを目的とする。   The present invention has been made to satisfy the above-described demand, and an object of the present invention is to provide a high-frequency processing apparatus capable of shortening cooking time by improving heating efficiency.

本発明の高周波処理装置は、被加熱物を収容する加熱室と、前記加熱室内に高周波を供給する第１高周波電力供給手段および第２高周波電力供給手段と、前記第１高周波電力供給手段および第２高周波電力供給手段から前記加熱室に供給される前記高周波を制御する制御部とを有し、前記第１高周波電力供給手段および前記第２高周波電力供給手段が、それぞれ、発振部と、前記発振部の出力を前記加熱室に供給する給電部と、を備え、更に前記第１高周波電力供給手段には前記加熱室から前記発振部方向に戻る高周波反射電力を検知する電力検知部を備え、前記制御部が、前記電力検知部からの検知信号に基づいて、少なくとも前記第１高周波電力供給手段の前記給電部から供給される高周波を制御する構成とし、更に前記第１高周波電力供給手段における前記給電部が複数であるとともに、前記複数の給電部から前記加熱室へ放射される高周波の励振電界または励振磁界の方向が同じであり、かつ、前記第２高周波電力供給手段における前記給電部から前記加熱室へ放射される高周波の励振電界および励振磁界の方向と異なる構成としてある。   The high-frequency treatment apparatus of the present invention includes a heating chamber that accommodates an object to be heated, first high-frequency power supply means and second high-frequency power supply means that supply a high frequency into the heating chamber, the first high-frequency power supply means, And a controller for controlling the high frequency supplied from the high frequency power supply means to the heating chamber, wherein the first high frequency power supply means and the second high frequency power supply means are respectively an oscillation section and the oscillation A power supply unit that supplies the output of the unit to the heating chamber, and the first high-frequency power supply means further includes a power detection unit that detects high-frequency reflected power returning from the heating chamber toward the oscillation unit, The control unit is configured to control at least a high frequency supplied from the power supply unit of the first high frequency power supply unit based on a detection signal from the power detection unit, and further to the first high frequency power. There are a plurality of power supply units in the supply unit, the directions of the high-frequency excitation electric field or excitation magnetic field radiated from the plurality of power supply units to the heating chamber are the same, and the second high-frequency power supply unit The configuration differs from the direction of the high-frequency excitation electric field and excitation magnetic field radiated from the power supply unit to the heating chamber.

この構成により、第１高周波電力供給手段の複数ある給電部は、発振部により発生させ加熱室に放射する高周波の励振電界または励振磁界の方向を一致させているので、放射された高周波は相互干渉する。放射される複数の高周波間で相互干渉するので、発振周波数や位相差を調整することにより加熱室内の電磁界分布や給電部を介して発振部方向へ戻る高周波反射電力などの高周波性能を調整できる。すなわち、様々な形状・大きさ・量・設置位置等の異なる被加熱物に対応した最適の高周波性能に設定、換言するとどのような形状、大きさ、量、設置位置であってもこの被加熱物に高周波が最大効率で集中するようにでき、加熱効率が大幅に向上して加熱時間の短縮や均一加熱が可能となる。
また、第１高周波電力供給手段と第２高周波電力供給手段の給電部間では、放射する高周波の励振電界および励振磁界の方向を異ならせているので、放射された高周波は相互干渉しない。第１高周波電力供給手段および第２高周波電力供給手段から放射される高周波間で相互干渉がないため、第１高周波電力供給手段により形成する加熱室内の電磁界分布や給電部を介して発振部方向へ戻る高周波反射電力などの高周波性能に第２高周波電力供給手段から放射される高周波は影響しない。また逆に第２高周波電力供給手段により形成される高周波性能に第１高周波電力供給手段から放射される高周波は影響しない。したがって各高周波電力供給手段によって作り出す高周波性能を低下させるようなことがなく、前記高周波の励振電界または励振磁界の方向を一致させたことによる効果をそのまま生かして加熱時間の短縮を維持することができるとともに、第２高周波電力供給手段により形成される高周波が加わってより一層の加熱時間短縮や均一加熱が可能となる。 With this configuration, the plurality of power supply units of the first high-frequency power supply means match the direction of the high-frequency excitation electric field or excitation magnetic field generated by the oscillation unit and radiated to the heating chamber, so To do. Since there is mutual interference between multiple radiated high frequencies, it is possible to adjust the high frequency performance such as the electromagnetic field distribution in the heating chamber and the high frequency reflected power that returns to the oscillating unit through the power supply unit by adjusting the oscillation frequency and phase difference. . In other words, it is set to the optimum high-frequency performance corresponding to the object to be heated in various shapes, sizes, quantities, installation positions, etc., in other words, this object to be heated regardless of the shape, size, quantity and installation position. The high frequency can be concentrated on the object with maximum efficiency, and the heating efficiency is greatly improved, so that the heating time can be shortened and uniform heating can be achieved.
In addition, since the directions of the high-frequency excitation electric field and the excitation magnetic field to be radiated are different between the feeding parts of the first high-frequency power supply means and the second high-frequency power supply means, the emitted high frequencies do not interfere with each other. Since there is no mutual interference between the high frequencies radiated from the first high-frequency power supply means and the second high-frequency power supply means, the direction of the oscillating section is determined via the electromagnetic field distribution in the heating chamber formed by the first high-frequency power supply means and the power supply section. The high frequency radiated from the second high frequency power supply means does not affect the high frequency performance such as the high frequency reflected power to return to. Conversely, the high frequency radiated from the first high frequency power supply means does not affect the high frequency performance formed by the second high frequency power supply means. Therefore, the high frequency performance produced by each high frequency power supply means is not deteriorated, and the shortening of the heating time can be maintained by utilizing the effect of matching the direction of the high frequency excitation electric field or excitation magnetic field as it is. At the same time, the high frequency formed by the second high frequency power supply means is applied, so that the heating time can be further reduced and uniform heating can be achieved.

また、本発明の高周波処理装置は、前記第２高周波電力供給手段にも加熱室から発振部方向に戻る高周波反射電力を検知する電力検知部を設けるとともに給電部を複数設け、前記第２高周波電力供給手段の複数の給電部から前記加熱室へ放射される高周波の励振電界または励振磁界の方向を同じとし、かつ、制御部は第１、第２高周波電力供給手段のうちの少なくとも一つの電力検知部からの検知信号に基づいて、第１高周波電力供給手段および第２高周波電力供給手段の給電部から供給される高周波を制御する構成としてある。   In the high-frequency processing apparatus of the present invention, the second high-frequency power supply means is provided with a power detection unit that detects high-frequency reflected power returning from the heating chamber in the direction of the oscillation unit, and a plurality of power supply units are provided. The direction of the high-frequency excitation electric field or excitation magnetic field radiated from the plurality of power supply units of the supply unit to the heating chamber is the same, and the control unit detects power of at least one of the first and second high-frequency power supply units Based on the detection signal from the unit, the high frequency supplied from the power feeding unit of the first high frequency power supply unit and the second high frequency power supply unit is controlled.

この構成により、第２高周波電力供給手段からの高周波性能も第１高周波電力供給手段と同様発振周波数や位相差を調整することにより加熱室内の電磁界分布や給電部を介して発振部方向へ戻る高周波反射電力などの高周波性能を調整でき、この第２高周波電力供給手段からの高周波も、どのような形状、大きさ、量、設置位置であってもこの被加熱物に最大効率で集中するようになり、更なる加熱効率の向上が可能となって加熱時間の一層の短縮や均一加熱が可能となる。
また、第１高周波電力供給手段および前記第２高周波電力供給手段に設けられている電力検知部によって加熱室から戻る高周波反射電力を最小とする条件を前記第１高周波電力供給手段および前記第２高周波電力供給手段それぞれ独立して検知し、その検知結果に基づいて第１高周波電力供給手段および第２高周波電力供給手段の給電部から供給される高周波をそれぞれ独立して制御して、それぞれ前記第１高周波電力供給手段および前記第２高周波電力供給手段毎に独立した発振周波数などの最適条件で被加熱物を加熱することができるので、加熱性能の更なる向上を図ることができることとなる。 With this configuration, the high-frequency performance from the second high-frequency power supply means also returns to the oscillating section direction via the electromagnetic field distribution in the heating chamber and the power feeding section by adjusting the oscillation frequency and phase difference as in the first high-frequency power supply means. High-frequency performance such as high-frequency reflected power can be adjusted, and high-frequency power from the second high-frequency power supply means can be concentrated to the object to be heated with maximum efficiency regardless of the shape, size, amount, and installation position. Thus, the heating efficiency can be further improved, and the heating time can be further shortened and uniform heating can be achieved.
The first high-frequency power supply means and the second high-frequency power supply condition are such that the high-frequency reflected power returning from the heating chamber is minimized by the power detection units provided in the first high-frequency power supply means and the second high-frequency power supply means. Each of the power supply means is independently detected, and based on the detection result, the high-frequency power supplied from the power feeding sections of the first high-frequency power supply means and the second high-frequency power supply means is independently controlled, and the first high-frequency power supply means Since the object to be heated can be heated under optimum conditions such as an independent oscillation frequency for each of the high frequency power supply means and the second high frequency power supply means, the heating performance can be further improved.

また、本発明の高周波処理装置は、前記制御部が第１、第２高周波電力供給手段の各電力検知部からの検知信号に基づいて、第１高周波電力供給手段および第２高周波電力供給手段の給電部から供給される高周波を前記第１高周波電力供給手段および前記第２高周波電力供給手段毎に独立して制御可能な構成としてある。   In the high frequency processing apparatus of the present invention, the control unit is configured to control the first high frequency power supply unit and the second high frequency power supply unit based on detection signals from the power detection units of the first and second high frequency power supply units. The high frequency supplied from the power supply unit can be controlled independently for each of the first high frequency power supply means and the second high frequency power supply means.

この構成により、第１高周波電力供給手段および前記第２高周波電力供給手段に設けられている電力検知部によって加熱室から戻る高周波反射電力を最小とする条件を前記第１高周波電力供給手段および前記第２高周波電力供給手段それぞれ独立して検知し、その検知結果に基づいて第１高周波電力供給手段および第２高周波電力供給手段の給電部から供給される高周波をそれぞれ独立して制御して、それぞれ前記第１高周波電力供給手段および前記第２高周波電力供給手段毎に独立した発振周波数などの最適条件で被加熱物を加熱することができるので、加熱性能の向上を図ることができることとなる。   With this configuration, the first high-frequency power supply means and the first high-frequency power supply means and the second high-frequency power supply means have a condition that minimizes the high-frequency reflected power returned from the heating chamber by the power detection unit provided in the first high-frequency power supply means and the second high-frequency power supply means. The two high-frequency power supply means are independently detected, and the high-frequency power supplied from the power feeding sections of the first high-frequency power supply means and the second high-frequency power supply means is independently controlled based on the detection result, Since the object to be heated can be heated under optimum conditions such as an independent oscillation frequency for each of the first high-frequency power supply means and the second high-frequency power supply means, the heating performance can be improved.

また、本発明の高周波処理装置は、前記第１高周波電力供給手段における前記給電部が前記加熱室において互いに対向する一対の壁面にそれぞれの励振電界または励振磁界の方向が一致するよう設けられ、前記第２高周波電力供給手段における前記給電部が前記第１高周波電力供給手段における前記給電部が設けられた壁面とは別の壁面、かつ、互いに対向する一対の壁面にそれぞれの励振電界または励振磁界の方向が一致し、かつ、前記第１高周波電力供給手段の前記給電部の励振電界および励振磁界の方向と異なるよう設けられた構成を有している。   Further, in the high frequency processing apparatus of the present invention, the feeding portion in the first high frequency power supply means is provided on a pair of wall surfaces facing each other in the heating chamber so that the directions of the excitation electric field or the excitation magnetic field coincide with each other, The feeding section in the second high-frequency power supply means is a wall surface different from the wall surface on which the feeding section in the first high-frequency power supply means is provided, and a pair of wall surfaces facing each other has a respective excitation electric field or excitation magnetic field. It has a configuration in which the directions coincide with each other and are different from the directions of the excitation electric field and the excitation magnetic field of the power feeding unit of the first high-frequency power supply means.

この構成により、第１高周波電力供給手段と第２高周波電力供給手段とが異なる対向する壁面にそれぞれ高周波電力供給手段毎で励振電界または励振磁界の方向が一致し、かつ、異なる高周波電力供給手段間で励振電界および励振磁界の方向が異なるよう設けられているので、第１高周波電力供給手段と第２高周波電力供給手段から供給される高周波の相互干渉が抑えられ、第１高周波電力供給手段による調理と、第２高周波電力供給手段による調理とを同時に行っても、相互の影響が少なく、最適な調理の進行を確保することができる。また、第１高周波電力供給手段および第２高周波電力供給手段をそれぞれ対向する壁面に設けているので、第１高周波電力供給手段と第２高周波電力供給手段の指向性が直交して相互の干渉を更に少なくする。更に、４壁面から高周波を供給するので、加熱を、満遍なく行うことができる。   With this configuration, the direction of the excitation electric field or the excitation magnetic field for each high-frequency power supply means coincides with the opposing wall surface where the first high-frequency power supply means and the second high-frequency power supply means are different, and between different high-frequency power supply means Since the directions of the excitation electric field and the excitation magnetic field are different from each other, the mutual interference of the high frequencies supplied from the first high frequency power supply means and the second high frequency power supply means is suppressed, and cooking by the first high frequency power supply means is performed. Even when the cooking by the second high-frequency power supply means is performed at the same time, there is little influence on each other and it is possible to ensure the optimal cooking progress. Further, since the first high-frequency power supply means and the second high-frequency power supply means are provided on the opposing wall surfaces, the directivity of the first high-frequency power supply means and the second high-frequency power supply means is orthogonal to each other, thereby causing mutual interference. Further reduce. Furthermore, since high frequency is supplied from the four wall surfaces, heating can be performed evenly.

また、本発明の高周波処理装置は、前記第１高周波電力供給手段における前記給電部および前記第２高周波電力供給手段における前記給電部が、前記加熱室における同一の壁面に前記第１高周波電力供給手段および前記第２高周波電力供給手段毎に励振電界または励振磁界の方向を一致させ、かつ、前記第１高周波電力供給手段および前記第２高周波電力供給手段間で励振電界および励振磁界の方向が異なるようそれぞれ設けられた構成を有している。   In the high-frequency processing apparatus of the present invention, the power supply unit in the first high-frequency power supply unit and the power supply unit in the second high-frequency power supply unit are arranged on the same wall surface in the heating chamber. The direction of the excitation electric field or the excitation magnetic field is made to coincide with each other for the second high frequency power supply means, and the directions of the excitation electric field and the excitation magnetic field are different between the first high frequency power supply means and the second high frequency power supply means. Each has a provided configuration.

この構成により、第１高周波電力供給手段の給電部および第２高周波電力供給手段の給電部をすべて加熱室の同一壁面に設けたので、配線および構造が簡単になり、かつ、第１高周波電力供給手段および第２高周波電力供給手段間の相互干渉による影響を抑え、最適条件を組み合わせた加熱ができる。   With this configuration, since the power feeding unit of the first high-frequency power supply unit and the power feeding unit of the second high-frequency power supply unit are all provided on the same wall surface of the heating chamber, the wiring and structure are simplified, and the first high-frequency power supply is performed. The influence of mutual interference between the means and the second high-frequency power supply means can be suppressed, and heating combined with optimum conditions can be performed.

また、本発明の高周波処理装置は、前記加熱室における互いに対向する一対の壁面のうちの一方に前記第１高周波電力供給手段における前記給電部のうちの一方と、前記第２高周波電力供給手段における前記給電部のうちの一方とが設けられ、前記加熱室における互いに対向する一対の壁面のうちの他方に前記第１高周波電力供給手段における前記給電部のうちの他方と、前記第２高周波電力供給手段における前記給電部のうちの他方とが設けられ、更に、前記第１高周波電力供給手段および前記第２高周波電力供給手段毎に励振電界または励振磁界の方向を一致させ、かつ、前記第１高周波電力供給手段および前記第２高周波電力供給手段間で励振電界および励振磁界の方向が異なった構成を有している。   Moreover, the high frequency processing apparatus of the present invention includes: one of the pair of wall surfaces facing each other in the heating chamber, one of the power feeding units in the first high frequency power supply unit, and the second high frequency power supply unit. One of the power feeding units is provided, and the other of the pair of wall surfaces facing each other in the heating chamber is connected to the other of the power feeding units in the first high frequency power supply unit and the second high frequency power supply. And the other one of the power feeding sections of the first and second high-frequency power supply means, and the first high-frequency power supply means and the second high-frequency power supply means have the same direction of the excitation electric field or excitation magnetic field, and the first high-frequency power supply means. The power supply means and the second high frequency power supply means have a configuration in which the directions of the excitation electric field and the excitation magnetic field are different.

この構成により、対向する壁面の一方に第１高周波電力供給手段および第２高周波電力供給手段の一方の給電部が設けられ、対向する壁面の他方に第１高周波電力供給手段および第２高周波電力供給手段の他方の給電部が設けられるので、第１高周波電力供給手段と第２高周波電力供給手段の給電部が同じ対向する壁面に設けられ、第１高周波電力供給手段および第２高周波電力供給手段により発生するそれぞれの電磁界分布などの高周波電力供給状態が同様の傾向となり、被加熱物に集中した加熱など加熱強弱のパターンを明確にした加熱が行ないやすくなる。   With this configuration, one of the first high frequency power supply means and the second high frequency power supply means is provided on one of the opposing wall surfaces, and the first high frequency power supply means and the second high frequency power supply are provided on the other of the opposing wall surfaces. Since the other power supply unit is provided, the power supply units of the first high-frequency power supply unit and the second high-frequency power supply unit are provided on the same opposing wall surface, and the first high-frequency power supply unit and the second high-frequency power supply unit The high-frequency power supply state such as the distribution of each generated electromagnetic field has the same tendency, and it becomes easy to perform heating with a clear pattern of heating intensity such as heating concentrated on the object to be heated.

また、本発明の高周波処理装置は、前記加熱室における互いに対向する一対の壁面のうちの一方に前記第１高周波電力供給手段における前記給電部のうちの一方と、前記第２高周波電力供給手段における前記給電部のうちの一方とが設けられ、前記加熱室における互いに対向する一対の壁面のうちの他方に前記第１高周波電力供給手段における前記給電部のうちの他方と、前記第２高周波電力供給手段における前記給電部のうちの他方とが設けられ、更に、前記第１高周波電力供給手段および前記第２高周波電力供給手段毎に励振電界または励振磁界の方向を一致させ、かつ、前記第１高周波電力供給手段および前記第２高周波電力供給手段間で励振電界および励振磁界の方向が異ならせた構成において、前記第１高周波電力供給手段における前記給電部の組み合わせを結んだ線と、前記第２高周波電力供給手段における前記給電部の組み合わせを結んだ線が交差しないように、前記壁面において前記給電部を配置している。   Moreover, the high frequency processing apparatus of the present invention includes: one of the pair of wall surfaces facing each other in the heating chamber, one of the power feeding units in the first high frequency power supply unit, and the second high frequency power supply unit. One of the power feeding units is provided, and the other of the pair of wall surfaces facing each other in the heating chamber is connected to the other of the power feeding units in the first high frequency power supply unit and the second high frequency power supply. And the other one of the power feeding sections of the first and second high-frequency power supply means, and the first high-frequency power supply means and the second high-frequency power supply means have the same direction of the excitation electric field or excitation magnetic field, and the first high-frequency power supply means. In the configuration in which the directions of the excitation electric field and the excitation magnetic field are different between the power supply means and the second high frequency power supply means, the first high frequency power supply means includes: A line connecting a combination of the power supply unit, the second such line connecting a combination of the power supply unit in the high-frequency power supply means do not intersect, it is arranged the power feeding section in the wall.

この構成により、第１高周波電力供給手段と第２高周波電力供給手段の給電部が同じ対向する壁面に設けられ、かつ、第１高周波電力供給手段における給電部の組み合わせと、第２高周波電力供給手段における給電部の組み合わせが交差しない給電部の配置により、それぞれの組合せ間の相互干渉が強まり、高周波電力供給手段毎に行なう制御の効果がより明確に現れる。   With this configuration, the first high frequency power supply means and the second high frequency power supply means are provided on the same opposing wall surface, and the combination of the power supply sections in the first high frequency power supply means and the second high frequency power supply means With the arrangement of the power feeding units in which the combinations of the power feeding units do not intersect with each other, the mutual interference between the respective combinations becomes stronger, and the effect of the control performed for each high-frequency power supply means appears more clearly.

本発明は、電力検知部によって加熱室の被加熱物を検知した結果に従い、第１高周波電力供給手段および/または第２高周波電力供給手段それぞれの最適条件で被加熱物を加熱することができ、加熱性能の向上を図ることができて、加熱時間の短縮、均一な加熱が可能な高周波処理装置を提供することができる。   According to the present invention, according to the result of detecting the object to be heated in the heating chamber by the power detection unit, the object to be heated can be heated under the optimum conditions of the first high frequency power supply means and / or the second high frequency power supply means, It is possible to provide a high-frequency treatment apparatus that can improve the heating performance and can shorten the heating time and perform uniform heating.

以下、本発明の実施の形態の高周波処理装置について、図面を用いて説明する。
図1は本発明の第１の実施の形態における高周波処理装置の構成図、図２（Ａ）は給電部による励振方向が同一の場合を示す説明図、図２（Ｂ）は給電部による励振方向が異なる場合を示す説明図である。 Hereinafter, a high frequency processing apparatus according to an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a configuration diagram of a high-frequency processing apparatus according to the first embodiment of the present invention, FIG. 2A is an explanatory diagram showing a case where the excitation direction by the power feeding unit is the same, and FIG. 2B is an excitation by the power feeding unit. It is explanatory drawing which shows the case where directions differ.

図１において、高周波発生部１は、第１高周波電力供給手段１Ａおよび第２高周波電力供給手段１Ｂを有している。第１高周波電力供給手段１Ａおよび第２高周波電力供給手段１Ｂは、それぞれ、半導体素子を用いて構成した発振部２ａ，２ｂ、発振部２ａ，２ｂの出力を２分配する電力分配部３ａ，３ｂ、電力分配部３ａ，３ｂそれぞれの出力を増幅する半導体素子を用いて構成した増幅部５ａ〜５ｄ、増幅部５ａ〜５ｄによって増幅された高周波出力を加熱室８内に放射する給電部７ａ〜７ｄを有している。また、電力分配部３ａ，３ｂと増幅部５ａ〜５ｄとを接続する高周波伝送路に挿入され入出力に任意の位相差を発生させる位相可変部４ａ〜４ｄ、発振部２ａ、２ｂと給電部７ａ〜７ｄとの間（ここでは、増幅部５ａ〜５ｄと給電部７ａ〜７ｄとの間）を接続する高周波伝送路に挿入され給電部７ａ〜７ｄから反射する電力を検知する電力検知部６ａ〜６ｄ、電力検知部６ａ〜６ｄによって検知される反射電力に応じて発振部２ａ，２ｂの発振周波数と位相可変部４ａ〜４ｄの位相量を制御する制御部１０とで構成している。   In FIG. 1, the high frequency generator 1 includes first high frequency power supply means 1A and second high frequency power supply means 1B. The first high-frequency power supply means 1A and the second high-frequency power supply means 1B are respectively composed of oscillation units 2a and 2b configured using semiconductor elements, and power distribution units 3a and 3b that distribute the outputs of the oscillation units 2a and 2b to two. Amplifying units 5a to 5d configured using semiconductor elements that amplify the outputs of the respective power distribution units 3a and 3b, and power feeding units 7a to 7d that radiate high-frequency outputs amplified by the amplifying units 5a to 5d into the heating chamber 8 Have. Also, phase variable units 4a to 4d that are inserted into a high-frequency transmission line connecting the power distribution units 3a and 3b and the amplifiers 5a to 5d and generate an arbitrary phase difference between the input and output, the oscillation units 2a and 2b, and the power feeding unit 7a. To 7d (here, between the amplifying units 5a to 5d and the power feeding units 7a to 7d) are inserted into a high-frequency transmission line that detects power reflected from the power feeding units 7a to 7d. 6d, and a control unit 10 that controls the oscillation frequencies of the oscillation units 2a and 2b and the phase amounts of the phase variable units 4a to 4d in accordance with the reflected power detected by the power detection units 6a to 6d.

制御部１０は発振部２ａ、２ｂおよび位相可変部４ａ〜４ｄを制御することにより、第１高周波電力供給手段１Ａおよび第２高周波電力供給手段１Ｂを独立して別個に制御できるようになっている。なお、制御部１０には各種のスイッチを有する操作部１１が接続されており、使用者は操作部１１を通じて調理メニューを選択する。   The control unit 10 can control the first high frequency power supply unit 1A and the second high frequency power supply unit 1B independently and separately by controlling the oscillation units 2a and 2b and the phase variable units 4a to 4d. . Note that an operation unit 11 having various switches is connected to the control unit 10, and the user selects a cooking menu through the operation unit 11.

また、本発明の高周波処理装置は、被加熱物を収納する略直方体構造からなる加熱室８を有し、加熱室８は金属材料からなる左壁面、右壁面、底壁面、上壁面、奥壁面および被加熱物を収納するために開閉する開閉扉(図示していない)と、被加熱物を載置する載置台から構成し、供給される高周波を内部に閉じ込めるように構成している。   The high-frequency processing apparatus of the present invention has a heating chamber 8 having a substantially rectangular parallelepiped structure for storing an object to be heated, and the heating chamber 8 is a left wall surface, a right wall surface, a bottom wall surface, an upper wall surface, and a rear wall surface made of a metal material. And an opening / closing door (not shown) that opens and closes to store the object to be heated, and a mounting table on which the object to be heated is placed, and is configured to confine the supplied high frequency inside.

そして、高周波発生部１の出力が伝送されその高周波を加熱室８内に放射供給する給電部７ａ〜７ｄが加熱室８を構成する壁面に配置されている。ここでは、第１高周波電力供給手段１Ａは一対（複数）の給電部７ａ、７ｂを加熱室８の上壁面と底面の略中央にそれぞれ配置し、第２高周波電力供給手段１Ｂの一対（複数）の給電部７ｃ，７ｄを対向構成の左壁面と右壁面の略中央にそれぞれ設けた構成をしている。すなわち、第１高周波電力供給手段１Ａの給電部７ａ、７ｂと、第２高周波電力供給手段１Ｂの給電部７ｃ、７ｄとは、異なる対向する壁面に設けられることになる。   The power feeding units 7 a to 7 d that transmit the output of the high frequency generator 1 and radiate the high frequency into the heating chamber 8 are arranged on the wall surface of the heating chamber 8. Here, the first high-frequency power supply means 1A has a pair (plurality) of power feeding portions 7a and 7b arranged at substantially the center of the upper wall surface and bottom surface of the heating chamber 8, respectively, and a pair (plurality) of the second high-frequency power supply means 1B. Are provided at substantially the center of the left wall surface and the right wall surface of the opposing structure. That is, the power feeding units 7a and 7b of the first high frequency power supply unit 1A and the power feeding units 7c and 7d of the second high frequency power supply unit 1B are provided on different opposing wall surfaces.

なお、第１高周波電力供給手段１Ａにおける複数の給電部７ａ、７ｂの励振電界方向Ａが同じであり、かつ、第２高周波電力供給手段１Ｂにおける給電部７ｃ、７ｄの励振電界方向Ｂと異なるように配置されている。すなわち、図２（Ａ）に示すように、第１高周波電力供給手段１Ａにおける複数の給電部７ａ、７ｂの励振電界方向Ａを例えば奥行き方向に設定する場合には、第２高周波電力供給手段１Ｂにおける給電部７ｃ、７ｄの励振電界方向Ｂを上下方向に設定し、第１高周波電力供給手段１Ａと第２高周波電力供給手段１Ｂの励振電界方向を異ならせている。   It should be noted that the excitation electric field directions A of the plurality of power feeding units 7a and 7b in the first high frequency power supply unit 1A are the same and are different from the excitation electric field directions B of the power feeding units 7c and 7d in the second high frequency power supply unit 1B. Is arranged. That is, as shown in FIG. 2A, when the excitation electric field direction A of the plurality of power feeding units 7a and 7b in the first high-frequency power supply means 1A is set in the depth direction, for example, the second high-frequency power supply means 1B. The excitation electric field direction B of the power feeding units 7c and 7d is set to the vertical direction, and the excitation electric field directions of the first high frequency power supply means 1A and the second high frequency power supply means 1B are made different.

このように、第１高周波電力供給手段１Ａの給電部７ａ、７ｂと第２高周波電力供給手段１Ｂの給電部７ｃ、７ｄとが異なる対向する壁面に設けられ、各給電部から放射される高周波の励振電界または励振磁界の方向を高周波電力供給手段毎に一致させ、更に、異なる高周波電力供給手段間で違えているので、第１高周波電力供給手段１Ａによる最適条件での加熱と、第２高周波電力供給手段１Ｂによる最適条件での加熱とを同時に行っても、相互間の干渉による影響を抑えることができ、両高周波電力供給手段それぞれで期待される最適な仕上がりの調理が行なえる。また、第１高周波電力供給手段および第２高周波電力供給手段をそれぞれ対向する壁面に設け４壁面から高周波を供給しているので、調理を、満遍なく行うことができる。   In this way, the power supply units 7a and 7b of the first high-frequency power supply unit 1A and the power supply units 7c and 7d of the second high-frequency power supply unit 1B are provided on different opposing wall surfaces, and the high-frequency power radiated from each power supply unit The direction of the excitation electric field or the excitation magnetic field is made to coincide with each other for the high-frequency power supply means, and further different between the different high-frequency power supply means, so that heating under the optimum conditions by the first high-frequency power supply means 1A and the second high-frequency power supply means Even if the heating under the optimum conditions by the supply means 1B is performed simultaneously, the influence of mutual interference can be suppressed, and the optimum finished cooking expected by each of the high-frequency power supply means can be performed. Moreover, since the first high frequency power supply means and the second high frequency power supply means are provided on the opposing wall surfaces and the high frequency is supplied from the four wall surfaces, cooking can be performed evenly.

増幅部５ａ〜５ｄは、低誘電損失材料から構成した誘電体基板の片面に形成した導電体パターンにて回路を構成し、各増幅部の増幅素子である半導体素子を良好に動作させるべく各半導体素子の入力側と出力側にそれぞれ整合回路を配している。各々の機能ブロックを接続する高周波伝送路は、誘電体基板の片面に設けた導電体パターンによって特性インピーダンスが略５０Ωの伝送回路を形成している。   The amplifying units 5a to 5d constitute a circuit with a conductor pattern formed on one surface of a dielectric substrate made of a low dielectric loss material, and each semiconductor is operated in order to operate a semiconductor element that is an amplifying element of each amplifying unit satisfactorily. Matching circuits are arranged on the input side and output side of the element, respectively. The high-frequency transmission line connecting each functional block forms a transmission circuit having a characteristic impedance of about 50Ω by a conductor pattern provided on one side of the dielectric substrate.

電力分配部３ａ，３ｂは、例えばウィルキンソン型分配器のような出力間に位相差を生じない同相分配器であってもよいし、ブランチライン型やラットレース型のような出力間に位相差を生じる分配器であってもかまわない。この電力分配部３ａ，３ｂによって各々の出力には発振部２ａ，２ｂから入力された高周波電力の略１／２の電力が伝送される。   The power distribution units 3a and 3b may be in-phase distributors that do not cause a phase difference between outputs such as Wilkinson type distributors, or may have a phase difference between outputs such as branch line type or rat race type. It may be the resulting distributor. The power distribution units 3a and 3b transmit substantially half of the high frequency power input from the oscillation units 2a and 2b to the respective outputs.

また、位相可変部４ａ〜４ｄは、印加電圧に応じて容量が変化する容量可変素子を用いて構成し、各々の位相可変範囲は、０度から略１８０度の範囲としている。これによって位相可変部４ａ〜４ｄより出力される高周波電力の位相差は０度から±１８０度の範囲を制御することができる。   Further, the phase variable sections 4a to 4d are configured by using variable capacitance elements whose capacitance changes according to the applied voltage, and each phase variable range is a range from 0 degrees to about 180 degrees. As a result, the phase difference of the high-frequency power output from the phase varying units 4a to 4d can be controlled in the range of 0 to ± 180 degrees.

また、電力検知部６ａ〜６ｄは、加熱室８側から給電部７ａ〜７ｄを介して発振部２ａ、２ｂ方向に戻る高周波反射電力を抽出するものであり、電力結合度をたとえば約４０ｄＢとし、反射電力の約１／１００００の電力量を抽出する。この電力信号はそれぞれ、検波ダイオード(図示していない)で整流化しコンデンサ(図示していない)で平滑処理し、その出力信号を制御部１０に入力させている。   The power detection units 6a to 6d extract high-frequency reflected power that returns from the heating chamber 8 side through the power feeding units 7a to 7d in the direction of the oscillation units 2a and 2b. The power coupling degree is, for example, about 40 dB. An amount of power that is approximately 1/10000 of the reflected power is extracted. The power signals are rectified by a detection diode (not shown), smoothed by a capacitor (not shown), and the output signal is input to the control unit 10.

制御部１０は、使用者が直接入力する被加熱物９の加熱条件あるいは加熱中に被加熱物９の加熱状態から得られる加熱情報と電力検知部６ａ〜６ｄが検知した検知情報に基づいて、高周波発生部の構成要素である発振部２ａ，２ｂと増幅部５ａ〜５ｄのそれぞれに供給する駆動電力の制御や位相可変部４ａ〜４ｄに供給する電圧を制御して、加熱室８内に収納された被加熱物９を最適に加熱する。   Based on the heating information obtained from the heating condition of the article 9 to be heated or the heating state of the article 9 to be heated and the detection information detected by the power detectors 6a to 6d, the controller 10 directly inputs the user. The driving power supplied to each of the oscillators 2a and 2b and the amplifiers 5a to 5d, which are constituent elements of the high frequency generator, and the voltage supplied to the phase variable parts 4a to 4d are controlled and stored in the heating chamber 8. The heated object 9 thus heated is optimally heated.

また、高周波発生部１には主に増幅部５ａ〜５ｄに備えた半導体素子の発熱を放熱させる放熱手段(図示していない)を配する。   Further, the high frequency generator 1 is provided with a heat radiating means (not shown) that mainly radiates heat generated by the semiconductor elements provided in the amplifiers 5a to 5d.

以上のように構成された高周波処理装置について、以下その動作、作用を説明する。
まず被加熱物９を加熱室８に収納し、その加熱条件を操作部１１から入力し、加熱開始キーを押す。加熱開始信号を受けた制御部１０の制御出力信号により高周波発生部１が動作を開始する。制御手段１０は、駆動電源（図示していない）を動作させて発振部２ａおよび２ｂに電力を供給する。この時、発振部２ａ、２ｂの初期の発振周波数は、たとえば２４００ＭＨｚに設定する電圧信号を供給し、発振が開始する。 About the high frequency processing apparatus comprised as mentioned above, the operation | movement and an effect | action are demonstrated below.
First, the object to be heated 9 is stored in the heating chamber 8, the heating condition is input from the operation unit 11, and the heating start key is pressed. In response to the control output signal of the controller 10 that has received the heating start signal, the high frequency generator 1 starts its operation. The control means 10 operates a drive power supply (not shown) to supply power to the oscillation units 2a and 2b. At this time, the initial oscillation frequency of the oscillation units 2a and 2b is supplied with a voltage signal set to 2400 MHz, for example, and oscillation starts.

発振部２ａ、２ｂを動作させると、その出力は電力分配部３ａ、３ｂにて各々略１／２分配され、４つの高周波電力信号となる。以降、駆動電源を制御して増幅部５ａ〜５ｄを動作させる。
そしてそれぞれの高周波電力信号は並列動作する増幅部５ａ〜５ｄ、電力検知部６ａ〜６ｄを経て給電部７ａ〜７ｄにそれぞれ出力され加熱室８内に放射される。このときの増幅部５ａ〜５ｄはそれぞれ１００Ｗ未満、たとえば５０Ｗの高周波電力を出力する。 When the oscillating units 2a and 2b are operated, their outputs are distributed approximately ½ each by the power distributing units 3a and 3b, and become four high-frequency power signals. Thereafter, the drive power supply is controlled to operate the amplifying units 5a to 5d.
Then, the respective high frequency power signals are output to the power feeding units 7 a to 7 d through the amplifying units 5 a to 5 d and the power detection units 6 a to 6 d operating in parallel, and are radiated into the heating chamber 8. At this time, the amplifying units 5a to 5d each output high-frequency power of less than 100 W, for example, 50 W.

加熱室８内に供給される高周波電力が被加熱物９に１００％吸収されると加熱室８からの高周波反射電力は０Ｗになるが、実際には被加熱物の種類・形状・量や被加熱物を含む加熱室８で決まるインピーダンスと、高周波発生部１の出力インピーダンスとの整合ずれにより、加熱室８側から給電部７ａ〜７ｄを介して発振部２ａ、２ｂ方向に反射する高周波反射電力が生じる。電力検出部６ａ〜７ｄは、この高周波反射電力を検出し、その電力量に比例した信号を検出するものであり、その検出信号を受けた制御部１０は、高周波反射電力が極小値となる発振周波数および位相差の選択を行う。   When 100% of the high-frequency power supplied into the heating chamber 8 is absorbed by the object 9 to be heated, the high-frequency reflected power from the heating chamber 8 becomes 0 W. In practice, however, the type, shape, amount, High-frequency reflected power reflected from the heating chamber 8 side toward the oscillating units 2a and 2b through the power feeding units 7a to 7d due to a mismatch between the impedance determined by the heating chamber 8 including the heated object and the output impedance of the high-frequency generating unit 1 Occurs. The power detection units 6a to 7d detect the high-frequency reflected power and detect a signal proportional to the amount of power. The control unit 10 that receives the detection signal oscillates when the high-frequency reflected power becomes a minimum value. Select frequency and phase difference.

制御部１０は、発振部２ａおよび２ｂの発振周波数を２４００ＭＨｚから例えば１ＭＨｚピッチで、周波数可変範囲の上限である２５００ＭＨｚまで変化させながら電力検出部６ａ〜７ｄで高周波反射電力を検出することにより、高周波反射電力を最小とする発振周波数の情報を得る。同様に制御部１０は、位相可変部４ａ〜４ｄによって生じる位相差を０度から変化させながら電力検出部６ａ〜７ｄで高周波反射電力を検出することにより、高周波反射電力を最小とする位相差の情報を得る。   The control unit 10 detects the high frequency reflected power by the power detection units 6a to 7d while changing the oscillation frequency of the oscillation units 2a and 2b from 2400 MHz to 2500 MHz which is the upper limit of the frequency variable range at a 1 MHz pitch, for example. Information on the oscillation frequency that minimizes the reflected power is obtained. Similarly, the control unit 10 detects the high-frequency reflected power by the power detection units 6a to 7d while changing the phase difference generated by the phase variable units 4a to 4d from 0 degrees, thereby reducing the phase difference that minimizes the high-frequency reflected power. get information.

なお、第１高周波電力供給手段１Ａおよび第２高周波電力供給手段１Ｂ毎に励振電界または励振磁界の方向を一致させているので、給電部７ａと７ｂおよび、７ｃと７ｄの組合せで供給される高周波間で相互干渉が発生し、両高周波電力供給手段１Ａ、１Ｂ毎の周波数や位相差制御により、両高周波電力供給手段１Ａ、１Ｂそれぞれにより発生する加熱室８内の電磁界分布およびそれぞれへの高周波反射電力が影響を受けて変動する。   Since the directions of the excitation electric field or the excitation magnetic field are the same for each of the first high frequency power supply means 1A and the second high frequency power supply means 1B, the high frequency supplied by the combination of the power feeding units 7a and 7b and 7c and 7d is used. Mutual interference occurs between the two high-frequency power supply units 1A and 1B, and the electromagnetic field distribution in the heating chamber 8 generated by each of the high-frequency power supply units 1A and 1B and the high frequency to each of the high-frequency power supply units 1A and 1B. The reflected power is affected and fluctuates.

また、第１高周波電力供給手段１Ａおよび第２高周波電力供給手段１Ｂ間で励振電界および励振磁界の方向を異ならせているので、両高周波電力供給手段間で相互干渉による影響が抑えられ、第１高周波電力供給手段１Ａおよび第２高周波電力供給手段１Ｂそれぞれの最適条件で独立して加熱を行うことができる。   Further, since the directions of the excitation electric field and the excitation magnetic field are different between the first high-frequency power supply means 1A and the second high-frequency power supply means 1B, the influence of mutual interference is suppressed between the two high-frequency power supply means, and the first Heating can be performed independently under the optimum conditions of the high-frequency power supply means 1A and the second high-frequency power supply means 1B.

制御部１０はこの高周波反射電力が最も小さくなる発振部２ａ、２ｂおよび位相可変部４ａ〜４ｄの位相差の条件で制御するとともに発振出力を入力された加熱条件に対応した出力が得られるように制御する。これにより、各増幅部５ａ〜５ｄはそれぞれ所定の高周波電力を出力する。そして、それぞれの出力は給電部７ａ〜７ｄに伝送され加熱室８内に放射される。   The control unit 10 controls the oscillation units 2a and 2b and the phase variable units 4a to 4d having the smallest high-frequency reflected power under the condition of the phase difference so that an output corresponding to the input heating condition can be obtained. Control. Thereby, each amplification part 5a-5d outputs predetermined high frequency electric power, respectively. Each output is transmitted to the power feeding units 7 a to 7 d and radiated into the heating chamber 8.

このように動作することで様々な形状・大きさ・量の異なる被加熱物に対しても高周波反射電力が最も小さくなる条件で加熱を開始することができ、増幅部５ａ〜５ｄに備えられた半導体素子が高周波反射電力によって過剰に発熱することを防止でき熱的な破壊を回避することができる。
なお、上記の説明では、位相可変部を２つ挿入した例で説明したが、電力分配部３ａのいずれかの出力にのみ挿入し、その位相変化幅を０度から３６０度となるように構成することもできる。 By operating in this way, it is possible to start heating under the condition that the high-frequency reflected power is minimized even for objects to be heated having various shapes, sizes, and amounts, and the amplifiers 5a to 5d are provided. The semiconductor element can be prevented from excessively generating heat due to the high-frequency reflected power, and thermal destruction can be avoided.
In the above description, the example in which two phase variable units are inserted has been described. However, the phase change width is set to 0 degree to 360 degrees by inserting only one of the outputs of the power distribution unit 3a. You can also

また、第１、第２高周波電力供給手段に給電部を夫々設けて、夫々の給電部から加熱室へ放射される高周波の励振電界または励振磁界の方向を同じとし、かつ、制御部は第１、第２高周波電力供給手段の各電力検知部からの検知信号に基づいて、第１高周波電力供給手段および第２高周波電力供給手段の給電部から供給される高周波を独立して制御する構成としたが、高周波の制御は第１、第２高周波電力供給手段の一つとしてもよく、また、電力検知部はどちらか一方の高周波電力供給手段にのみ設けてその検知信号で両方の高周波電力供給手段を制御或は複数の給電部を有する高周波電力供給手段を制御してもよく、また、一方の高周波電力供給手段の給電部は一つとして単に高周波を供給するだけとしてもよく、本発明の趣旨の範囲で変更可能である。   Further, the first and second high-frequency power supply means are respectively provided with power supply units, the directions of the high-frequency excitation electric field or excitation magnetic field radiated from the respective power supply units to the heating chamber are the same, and the control unit is the first Based on the detection signal from each power detection unit of the second high frequency power supply unit, the high frequency supplied from the power supply unit of the first high frequency power supply unit and the second high frequency power supply unit is controlled independently. However, the high-frequency control may be one of the first and second high-frequency power supply means, and the power detection unit is provided only in one of the high-frequency power supply means, and both high-frequency power supply means are detected by the detection signal. Or the high frequency power supply means having a plurality of power supply sections may be controlled, or the power supply section of one of the high frequency power supply means may simply supply a high frequency as one. In the range Is a further possible.

以上、説明した高周波処理装置の制御方法によれば、第１高周波電力供給手段１Ａおよび２高周波電力供給手段１Ｂの給電部７ａ〜７ｄから加熱室８に供給され、被加熱物９を介して戻ってくる高周波反射電力を検知して情報を得て、検知結果に応じて制御部１０が第１高周波電力供給手段１Ａおよび第２高周波電力供給手段１Ｂの給電部７ａ〜７ｄをそれぞれの高周波反射電力を最小とする条件で制御して被加熱物９の加熱調理を行うので、加熱効率の向上を図ることができることとなる。この際、制御部１０は第１高周波電力供給手段１Ａと第２高周波電力供給手段１Ｂとを独立して別個に制御することができ、第１高周波電力供給手段１Ａと第２高周波電力供給手段１Ｂ間は相互干渉が少なく、それぞれの加熱に影響が出ないので、それぞれ検知した情報に基づいて、第１高周波電力供給手段１Ａおよび第２高周波電力供給手段１Ｂをそれぞれの最適条件で制御して、効率のよい調理を行うことができる。   As described above, according to the control method of the high-frequency processing apparatus described above, the first high-frequency power supply means 1A and the second high-frequency power supply means 1B are supplied to the heating chamber 8 from the power feeding units 7a to 7d and return via the object 9 to be heated. Information is obtained by detecting the incoming high-frequency reflected power, and the control unit 10 controls the power supply units 7a to 7d of the first high-frequency power supply means 1A and the second high-frequency power supply means 1B according to the detection result. Since the cooking of the article to be heated 9 is performed under the condition that minimizes the heating, the heating efficiency can be improved. At this time, the control unit 10 can independently control the first high-frequency power supply means 1A and the second high-frequency power supply means 1B independently, and the first high-frequency power supply means 1A and the second high-frequency power supply means 1B. Since there is little mutual interference between the two, there is no effect on the respective heating, so based on the detected information, the first high-frequency power supply means 1A and the second high-frequency power supply means 1B are controlled under their optimum conditions, Efficient cooking can be performed.

次に、本発明にかかる高周波処理装置の第２実施形態について説明する。
図３は本発明の第２実施形態にかかる高周波処理装置を示す構成図である。なお、前述した第１実施形態にかかる高周波処理装置と共通する部位には同じ符号を付して、重複する説明を省略することとする。 Next, a second embodiment of the high-frequency processing device according to the present invention will be described.
FIG. 3 is a block diagram showing a high frequency processing apparatus according to the second embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the site | part which is common in the high frequency processing apparatus concerning 1st Embodiment mentioned above, and the overlapping description is abbreviate | omitted.

図３に示すように、第２実施形態にかかる高周波処理装置は、加熱室８における互いに対向する一対の壁面のうちの一方（左壁面）に第１高周波電力供給手段１Ａにおける給電部７ａ、７ｂのうちの一方（７ａ）と、第２供給手１Ｂにおける給電部７ｃ、７ｄのうちの一方（７ｃ）とが設けられ、加熱室８における互いに対向する一対の壁面のうちの他方（右壁面）に第１高周波電力供給手段１Ａにおける給電部７ａ、７ｂのうちの他方（７ｂ）と、第２高周波電力供給手段１Ｂにおける給電部７ｃ、７ｄのうちの他方（７ｄ）とが設けられている。すなわち、第１高周波電力供給手段１Ａの給電部７ａ、７ｂと第２高周波電力供給手段１Ｂの給電部７ｃ、７ｄが同じ対向する壁面に設けられることとなる。   As shown in FIG. 3, the high-frequency processing apparatus according to the second embodiment has power supply units 7 a and 7 b in the first high-frequency power supply means 1 </ b> A on one (left wall surface) of a pair of opposing wall surfaces in the heating chamber 8. One of the wall surfaces (7a) and the one of the power supply portions 7c and 7d (7c) in the second supplier 1B are provided, and the other of the pair of wall surfaces facing each other in the heating chamber 8 (right wall surface). The other (7b) of the power supply units 7a and 7b in the first high-frequency power supply unit 1A and the other (7d) of the power supply units 7c and 7d in the second high-frequency power supply unit 1B are provided. That is, the power supply portions 7a and 7b of the first high-frequency power supply means 1A and the power supply portions 7c and 7d of the second high-frequency power supply means 1B are provided on the same opposing wall surface.

このように構成しても、前述した第１実施形態の場合と同様の作用効果を得ることができる。   Even if comprised in this way, the effect similar to the case of 1st Embodiment mentioned above can be acquired.

なお、本発明の高周波処理装置は、前述した各実施形態に限定されるものでなく、適宜な変形，改良等が可能である。   The high-frequency processing apparatus of the present invention is not limited to the above-described embodiments, and appropriate modifications and improvements can be made.

また、給電部７ａ〜７ｄの配置は前述した図１および図３に示す場合に拘束されるものではなくいずれかの壁面に複数の給電部を設けてもよいし、対向面ではない例えば右壁面と底壁面のような隣接する組合せで対となる給電部を構成してもかまわない。例えば、第１高周波電力供給手段における給電部および第２高周波電力供給手段における給電部を、加熱室における同一の壁面にそれぞれ設けることもできる。これにより、第１高周波電力供給手段の給電部および第２高周波電力供給手段の給電部をすべて加熱室の同一壁面に設けたので、配線および構造が簡単になる。   In addition, the arrangement of the power feeding portions 7a to 7d is not restricted in the case shown in FIGS. 1 and 3 described above, and a plurality of power feeding portions may be provided on any wall surface, and for example, the right wall surface that is not the facing surface A pair of adjacent power supply units such as a bottom wall surface may be configured. For example, the power supply unit in the first high-frequency power supply unit and the power supply unit in the second high-frequency power supply unit can be provided on the same wall surface in the heating chamber, respectively. As a result, since the power supply unit of the first high-frequency power supply unit and the power supply unit of the second high-frequency power supply unit are all provided on the same wall surface of the heating chamber, the wiring and structure are simplified.

以上のように、本発明にかかる高周波処理装置は、発振部により発生させた高周波を給電部を介して加熱室に供給する第１高周波電力供給手段と第２高周波電力供給手段を有し、第１高周波電力供給手段および第２高周波電力供給手段に設けられている電力検知部によって加熱室の被加熱物を検知し、第１高周波電力供給手段および第２高周波電力供給手段によって最適な条件で被加熱物を加熱することができ、加熱性能の向上を図ることができるという効果を有し、複数の最適な条件で被加熱物を加熱調理することができる高周波電力供給手段を備えた高周波処理装置等として有用である。   As described above, the high-frequency processing apparatus according to the present invention includes the first high-frequency power supply unit and the second high-frequency power supply unit that supply the high frequency generated by the oscillation unit to the heating chamber via the power feeding unit, An object to be heated in the heating chamber is detected by the power detectors provided in the first high-frequency power supply means and the second high-frequency power supply means, and the first high-frequency power supply means and the second high-frequency power supply means are covered under the optimum conditions. A high frequency processing apparatus having a high frequency power supply means capable of heating a heated object and improving the heating performance and capable of cooking the object to be heated under a plurality of optimum conditions Useful as such.

本発明の第１の実施の形態における高周波処理装置の構成図The block diagram of the high frequency processing apparatus in the 1st Embodiment of this invention （Ａ）は給電部による励振方向が同一の場合を示す説明図、（Ｂ）は給電部による励振方向が異なる場合を示す説明図(A) is explanatory drawing which shows the case where the excitation direction by a feed part is the same, (B) is explanatory drawing which shows the case where the excitation direction by a feed part differs 本発明の第２実施形態にかかる高周波処理装置を示す構成図The block diagram which shows the high frequency processing apparatus concerning 2nd Embodiment of this invention.

符号の説明Explanation of symbols

１Ａ 第１高周波電力供給手段
１Ｂ 第２高周波電力供給手段
２ａ、２ｂ 発振部
６ａ〜６ｄ 電力検知部
７ａ〜７ｄ 給電部
８ 加熱室
９ 被加熱物
１０ 制御部 DESCRIPTION OF SYMBOLS 1A 1st high frequency electric power supply means 1B 2nd high frequency electric power supply means 2a, 2b Oscillation part 6a-6d Electric power detection part 7a-7d Feeding part 8 Heating chamber 9 To-be-heated object 10 Control part

Claims (7)

被加熱物を収容する加熱室と、
前記加熱室内に高周波を供給する第１高周波電力供給手段および第２高周波電力供給手段と、前記第１高周波電力供給手段および第２高周波電力供給手段から前記加熱室に供給される前記高周波を制御する制御部とを有し、
前記第１高周波電力供給手段および前記第２高周波電力供給手段が、それぞれ、
発振部と、
前記発振部の出力を前記加熱室に供給する給電部と、を備え、
更に前記第１高周波電力供給手段には前記加熱室から前記発振部方向に戻る高周波反射電力を検知する電力検知部を備え、
前記制御部が、前記電力検知部からの検知信号に基づいて、少なくとも前記第１高周波電力供給手段の前記給電部から供給される高周波を制御する構成とし、
更に前記第１高周波電力供給手段における前記給電部が複数であるとともに、前記複数の給電部から前記加熱室へ放射される高周波の励振電界または励振磁界の方向が同じであり、かつ、前記第２高周波電力供給手段における前記給電部から前記加熱室へ放射される高周波の励振電界および励振磁界の方向と異なる構成とした高周波処理装置。 A heating chamber for storing an object to be heated;
First high frequency power supply means and second high frequency power supply means for supplying a high frequency into the heating chamber, and control the high frequency supplied to the heating chamber from the first high frequency power supply means and the second high frequency power supply means. A control unit,
The first high frequency power supply means and the second high frequency power supply means are respectively
An oscillation unit;
A power supply unit that supplies the output of the oscillation unit to the heating chamber,
Furthermore, the first high frequency power supply means includes a power detection unit that detects high frequency reflected power returning from the heating chamber toward the oscillation unit,
Based on a detection signal from the power detection unit, the control unit is configured to control at least a high frequency supplied from the power supply unit of the first high frequency power supply unit,
Further, the first high-frequency power supply means includes a plurality of the power supply units, the direction of the high-frequency excitation electric field or excitation magnetic field radiated from the plurality of power supply units to the heating chamber is the same, and the second A high-frequency processing apparatus having a configuration different from directions of a high-frequency excitation electric field and excitation magnetic field radiated from the power feeding unit to the heating chamber in a high-frequency power supply means. 前記第２高周波電力供給手段にも加熱室から発振部方向に戻る高周波反射電力を検知する電力検知部を設けるとともに給電部を複数設け、前記第２高周波電力供給手段の複数の給電部から前記加熱室へ放射される高周波の励振電界または励振磁界の方向を同じとし、かつ、制御部は第１、第２高周波電力供給手段のうちの少なくとも一つの電力検知部からの検知信号に基づいて、第１高周波電力供給手段および第２高周波電力供給手段の給電部から供給される高周波を制御する構成とした請求項１記載の高周波電力処理装置。   The second high-frequency power supply means is also provided with a power detector for detecting high-frequency reflected power returning from the heating chamber in the direction of the oscillating section, and a plurality of power supply sections are provided, and the heating from the plurality of power supply sections of the second high-frequency power supply means The direction of the high-frequency excitation electric field or excitation magnetic field radiated to the room is the same, and the control unit is based on a detection signal from at least one power detection unit of the first and second high-frequency power supply means. The high frequency power processing apparatus according to claim 1, wherein the high frequency power supplied from the power feeding section of the first high frequency power supply means and the second high frequency power supply means is controlled. 前記制御部は第１、第２高周波電力供給手段の各電力検知部からの検知信号に基づいて、第１高周波電力供給手段および第２高周波電力供給手段の給電部から供給される高周波を前記第１高周波電力供給手段および前記第２高周波電力供給手段毎に独立して制御可能である請求項１記載の高周波処理装置。   The controller controls the first and second high-frequency power supply means based on the detection signals from the power detection units of the first and second high-frequency power supply means. 2. The high frequency processing apparatus according to claim 1, wherein the high frequency power supply means and the second high frequency power supply means can be independently controlled. 前記第１高周波電力供給手段における前記給電部が前記加熱室において互いに対向する一対の壁面にそれぞれの励振電界または励振磁界の方向が一致するよう設けられ、
前記第２高周波電力供給手段における前記給電部が前記第１高周波電力供給手段における前記給電部が設けられた壁面とは別の壁面、かつ、互いに対向する一対の壁面にそれぞれの励振電界または励振磁界の方向が一致し、かつ、前記第１高周波電力供給手段の前記給電部の励振電界および励振磁界の方向と異なるよう設けられている請求項２または３に記載の高周波処理装置。 The feeding section of the first high-frequency power supply means is provided on a pair of wall surfaces facing each other in the heating chamber so that the directions of the excitation electric field or the excitation magnetic field coincide with each other;
The feeding section in the second high-frequency power supply means has a wall surface different from the wall surface on which the feeding section in the first high-frequency power supply means is provided, and a pair of wall surfaces facing each other. 4. The high frequency processing apparatus according to claim 2, wherein the directions of the first and second high frequency power supply units are different from each other in a direction of an excitation electric field and an excitation magnetic field of the power feeding unit. 前記第１高周波電力供給手段における前記給電部および前記第２高周波電力供給手段における前記給電部が、前記加熱室における同一の壁面に前記第１高周波電力供給手段および前記第２高周波電力供給手段毎に励振電界または励振磁界の方向を一致させ、かつ、前記第１高周波電力供給手段および前記第２高周波電力供給手段間で励振電界および励振磁界の方向が異なるよう設けられている請求項２または３に記載の高周波処理装置。   The power supply unit in the first high-frequency power supply unit and the power supply unit in the second high-frequency power supply unit are provided on the same wall surface in the heating chamber for each of the first high-frequency power supply unit and the second high-frequency power supply unit. The direction of the excitation electric field or the excitation magnetic field is made to coincide with each other, and the directions of the excitation electric field and the excitation magnetic field are different between the first high frequency power supply means and the second high frequency power supply means. The high frequency processing apparatus described. 前記加熱室における互いに対向する一対の壁面のうちの一方に前記第１高周波電力供給手段における前記給電部のうちの一方と、前記第２高周波電力供給手段における前記給電部のうちの一方とが設けられ、
前記加熱室における互いに対向する一対の壁面のうちの他方に前記第１高周波電力供給手段における前記給電部のうちの他方と、前記第２高周波電力供給手段における前記給電部のうちの他方とが設けられ、更に、前記第１高周波電力供給手段および前記第２高周波電力供給手段毎に励振電界または励振磁界の方向を一致させ、かつ、前記第１高周波電力供給手段および前記第２高周波電力供給手段間で励振電界および励振磁界の方向が異なっている請求項２または３に記載の高周波処理装置。 One of the pair of wall surfaces facing each other in the heating chamber is provided with one of the power feeding sections in the first high frequency power supply means and one of the power feeding sections in the second high frequency power supply means. And
The other of the pair of wall surfaces facing each other in the heating chamber is provided with the other of the power feeding sections in the first high frequency power supply means and the other of the power feeding sections in the second high frequency power supply means. Further, the direction of the excitation electric field or the excitation magnetic field is made to coincide for each of the first high-frequency power supply means and the second high-frequency power supply means, and between the first high-frequency power supply means and the second high-frequency power supply means 4. The high frequency processing apparatus according to claim 2, wherein directions of the excitation electric field and the excitation magnetic field are different. 前記加熱室における互いに対向する一対の壁面のうちの一方に前記第１高周波電力供給手段における前記給電部のうちの一方と、前記第２高周波電力供給手段における前記給電部のうちの一方とが設けられ、
前記加熱室における互いに対向する一対の壁面のうちの他方に前記第１高周波電力供給手段における前記給電部のうちの他方と、前記第２高周波電力供給手段における前記給電部のうちの他方とが設けられ、更に、前記第１高周波電力供給手段および前記第２高周波電力供給手段毎に励振電界または励振磁界の方向を一致させ、かつ、前記第１高周波電力供給手段および前記第２高周波電力供給手段間で励振電界および励振磁界の方向が異ならせた構成において、
前記第１高周波電力供給手段における前記給電部の組み合わせを結んだ線と、前記第２高周波電力供給手段における前記給電部の組み合わせを結んだ線が交差しないように、前記壁面において前記給電部を配置した請求項５または６に記載の高周波処理装置。 One of the pair of wall surfaces facing each other in the heating chamber is provided with one of the power feeding sections in the first high frequency power supply means and one of the power feeding sections in the second high frequency power supply means. And
The other of the pair of wall surfaces facing each other in the heating chamber is provided with the other of the power feeding sections in the first high frequency power supply means and the other of the power feeding sections in the second high frequency power supply means. Further, the direction of the excitation electric field or the excitation magnetic field is made to coincide for each of the first high-frequency power supply means and the second high-frequency power supply means, and between the first high-frequency power supply means and the second high-frequency power supply means In the configuration in which the directions of the excitation electric field and the excitation magnetic field are different,
The power supply unit is arranged on the wall surface so that a line connecting the combination of the power supply units in the first high-frequency power supply unit and a line connecting the combination of the power supply units in the second high-frequency power supply unit do not intersect. The high frequency processing apparatus according to claim 5 or 6.
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JP5648257B2 (en) * 2009-09-03 2015-01-07 パナソニックＩｐマネジメント株式会社 Microwave heating device

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JP5648257B2 (en) * 2009-09-03 2015-01-07 パナソニックＩｐマネジメント株式会社 Microwave heating device

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