JP2009059803A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2009059803A JP2009059803A JP2007224421A JP2007224421A JP2009059803A JP 2009059803 A JP2009059803 A JP 2009059803A JP 2007224421 A JP2007224421 A JP 2007224421A JP 2007224421 A JP2007224421 A JP 2007224421A JP 2009059803 A JP2009059803 A JP 2009059803A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- 239000012535 impurity Substances 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 19
- 230000005669 field effect Effects 0.000 claims description 11
- 239000000969 carrier Substances 0.000 abstract description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 102
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 100
- 238000005468 ion implantation Methods 0.000 description 66
- 238000000034 method Methods 0.000 description 18
- 150000002500 ions Chemical class 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】JFET10は、空乏層を用いて電流の流れが制御される領域であるチャネル領域の厚みであるチャネル厚tchが、チャネル領域を構成する材料であるSiCの誘電率εs、素電荷q、チャネル領域の不純物濃度であるn型SiC層17の不純物濃度Nch、p+イオン注入領域21bの不純物濃度Ng、JFET10の動作時におけるチャネル領域の温度T、pn接合のビルトインポテンシャルφbi(T)、基準温度Tref、チャネル領域のキャリアの移動度に関する温度係数αch、チャネル領域の抵抗に関する温度係数α、ドレイン電極31に印加される電圧をVd、0.8未満の任意の数値をk、としたときにTref<Tかつtch−min≦tch≦tch−maxを満足する。
【選択図】図2
Description
Heinz Mitlehner, "Dynamic characteristics of high voltage 4H-SiC vertical JFETs", International Symposium on Power Semiconductor Devices ISPSD, IEEE, 1999, p.339-342
図1に示したチャネル領域の構成を考えた場合、ドレイン電流IDは以下のような式により表わすことができる。
Claims (4)
- pn接合から広がる空乏層を用いて電流の流れを制御する半導体装置であって、
空乏層を用いて電流の流れが制御される領域であるチャネル領域の厚みtchが、前記チャネル領域を構成する材料の誘電率をεs、素電荷をq、前記チャネル領域の不純物濃度をNch、ゲート電極から前記チャネル領域までの領域の不純物濃度をNg、半導体装置の動作時における前記チャネル領域の温度をT、前記pn接合のビルトインポテンシャルをφbi(T)、基準温度をTref、チャネル領域のキャリアの移動度に関する温度係数をαch、チャネル領域の抵抗に関する温度係数をα、前記チャネル領域に隣接するように配置されるドレイン電極に印加される電圧をVd、0.8未満の任意の数値をk、とし、
- 前記チャネル領域を構成する材料はワイドバンドギャップ半導体である、請求項1に記載の半導体装置。
- 前記半導体装置は、接合型電界効果トランジスタである、請求項1または2に記載の半導体装置。
- 半導体装置であって、
半導体基板と、
前記半導体基板上に形成された第1導電型の第1半導体層と、
前記第1半導体層上に積層するように形成された前記第1導電型と異なる第2導電型の第2半導体層と、
前記第2半導体層上に配置されたゲート電極と、
前記第2半導体層上において、前記ゲート電極を挟むように配置されたソース電極およびドレイン電極とを備え、
前記第2半導体層においては、
前記ゲート電極と接続された第1導電型の第1不純物領域と、
前記第1不純物領域を挟むように配置され、前記ソース電極および前記ドレイン電極にそれぞれ接続された第2導電型の第2不純物領域とが形成され、
前記第2半導体層において前記第1不純物領域下に位置するチャネル領域の、前記第1不純物領域から前記第1半導体層に向かう方向における厚みtchが、前記チャネル領域を構成する材料の誘電率をεs、素電荷をq、前記チャネル領域の不純物濃度をNch、前記第1不純物領域の不純物濃度をNg、半導体装置の動作時における前記チャネル領域の温度をT、前記第1不純物領域と前記第2半導体層との接合界面に形成されるpn接合のビルトインポテンシャルをφbi(T)、基準温度をTref、前記チャネル領域のキャリアの移動度に関する温度係数をαch、前記チャネル領域の抵抗に関する温度係数をα、前記ドレイン電極に印加される電圧をVd、0.8未満の任意の数値をk、とし、
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JP2007224421A JP5018349B2 (ja) | 2007-08-30 | 2007-08-30 | 半導体装置 |
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JP2009059803A true JP2009059803A (ja) | 2009-03-19 |
JP5018349B2 JP5018349B2 (ja) | 2012-09-05 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010134415A1 (ja) * | 2009-05-22 | 2010-11-25 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
WO2012066820A1 (ja) * | 2010-11-16 | 2012-05-24 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
CN102782823A (zh) * | 2011-02-07 | 2012-11-14 | 住友电气工业株式会社 | 碳化硅半导体器件及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068762A (ja) * | 2001-06-14 | 2003-03-07 | Sumitomo Electric Ind Ltd | 横型接合型電界効果トランジスタ |
WO2005122273A1 (ja) * | 2004-06-11 | 2005-12-22 | Matsushita Electric Industrial Co., Ltd. | パワー素子 |
JP2006278857A (ja) * | 2005-03-30 | 2006-10-12 | Ngk Insulators Ltd | 半導体積層構造、半導体素子及び当該半導体素子を用いた装置 |
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- 2007-08-30 JP JP2007224421A patent/JP5018349B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068762A (ja) * | 2001-06-14 | 2003-03-07 | Sumitomo Electric Ind Ltd | 横型接合型電界効果トランジスタ |
WO2005122273A1 (ja) * | 2004-06-11 | 2005-12-22 | Matsushita Electric Industrial Co., Ltd. | パワー素子 |
JP2006278857A (ja) * | 2005-03-30 | 2006-10-12 | Ngk Insulators Ltd | 半導体積層構造、半導体素子及び当該半導体素子を用いた装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010134415A1 (ja) * | 2009-05-22 | 2010-11-25 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP2010272766A (ja) * | 2009-05-22 | 2010-12-02 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
CN102439699A (zh) * | 2009-05-22 | 2012-05-02 | 住友电气工业株式会社 | 半导体器件及其制造方法 |
WO2012066820A1 (ja) * | 2010-11-16 | 2012-05-24 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
CN102770949A (zh) * | 2010-11-16 | 2012-11-07 | 住友电气工业株式会社 | 碳化硅半导体器件 |
CN102782823A (zh) * | 2011-02-07 | 2012-11-14 | 住友电气工业株式会社 | 碳化硅半导体器件及其制造方法 |
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