JP2008543090A - 空間フィルタ - Google Patents
空間フィルタ Download PDFInfo
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- JP2008543090A JP2008543090A JP2008514811A JP2008514811A JP2008543090A JP 2008543090 A JP2008543090 A JP 2008543090A JP 2008514811 A JP2008514811 A JP 2008514811A JP 2008514811 A JP2008514811 A JP 2008514811A JP 2008543090 A JP2008543090 A JP 2008543090A
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- Prior art keywords
- spatial filter
- film
- photonic device
- laser
- semiconductor structure
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0203—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0286—Coatings with a reflectivity that is not constant over the facets, e.g. apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims (15)
- 基板と、
活性層を含むエピタキシャル半導体構造と、
前記エピタキシャル半導体構造内で加工されたエッチング面と、
前記エッチング面上に成膜された空間フィルタと、
を含む、フォトニックデバイス。 - 前記空間フィルタが、材料の多層膜を含む、請求項1に記載のフォトニックデバイス。
- 前記面と前記空間フィルタとの間で前記面上にAR膜をさらに含む、請求項1に記載のフォトニックデバイス。
- 基板と、
前記基板上にあり、活性層を含むエピタキシャル半導体構造と、
前記エピタキシャル半導体構造の端部のエッチング面と、
前記面上の反射防止膜と、
前記反射防止膜上の空間フィルタと、
を含む、フォトニックデバイス。 - 前記AR膜が、前記面上に誘電性膜を含み、
前記空間フィルタが、前記AR膜上に、成膜された材料の多層膜を含む、請求項4に記載のフォトニックデバイス。 - 前記半導体構造に電流を供給して、前記半導体構造内で光を伝播させ、前記面から少なくとも部分的に照射させるための電気的コンタクトをさらに含む、請求項5に記載のフォトニックデバイス。
- 前記空間フィルタが、前記面上に位置して、前記照射される光を形成する、請求項6に記載のフォトニックデバイス。
- 前記空間フィルタが、反射率改質膜である、請求項5に記載のフォトニックデバイス。
- 前記空間フィルタが、フォトニックデバイスから照射される光の形状を改質するように形成されている、請求項8に記載のフォトニックデバイス。
- 光線を照射することが可能な単一ラテラルモード半導体フォトニックデバイスを製造する方法であって、
フォトニックデバイスのエッチング面上に反射防止膜を成膜するステップと、
前記反射防止膜上に反射率改質膜を空間的に制御して成膜して、フォトニックデバイスによって照射されるビームの空間性能を改質するステップと、
を含む、方法。 - 反射率改質膜を空間的に制御するステップは、前記反射防止膜上の膜の成膜物をリソグラフィ的に制御するステップを含む、請求項10に記載の方法。
- 基板と、
活性層を含むエピタキシャル半導体構造と、
前記エピタキシャル半導体構造内で加工された、角度がついたエッチング面と、
前記角度がついたエッチング面上の表面上に成膜された空間フィルタと、
を含む、フォトニックデバイス。 - 前記空間フィルタが、材料の多層膜を含む、請求項12に記載のフォトニックデバイス。
- 前記表面と前記空間フィルタとの間で前記表面上にAR膜をさらに含む、請求項12に記載のフォトニックデバイス。
- 前記表面が、レンズの表面である、請求項12に記載のフォトニックデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68588305P | 2005-06-01 | 2005-06-01 | |
PCT/US2006/021132 WO2006130700A2 (en) | 2005-06-01 | 2006-06-01 | Spatial filters |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008543090A true JP2008543090A (ja) | 2008-11-27 |
Family
ID=37482274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008514811A Pending JP2008543090A (ja) | 2005-06-01 | 2006-06-01 | 空間フィルタ |
Country Status (5)
Country | Link |
---|---|
US (2) | US7957445B2 (ja) |
EP (1) | EP1886388B1 (ja) |
JP (1) | JP2008543090A (ja) |
CN (1) | CN101189768B (ja) |
WO (1) | WO2006130700A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019004106A (ja) * | 2017-06-19 | 2019-01-10 | 住友電気工業株式会社 | 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10559939B1 (en) | 2012-04-05 | 2020-02-11 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9343871B1 (en) * | 2012-04-05 | 2016-05-17 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US10608412B2 (en) * | 2017-06-19 | 2020-03-31 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser, light emitting apparatus |
JP6911567B2 (ja) | 2017-06-22 | 2021-07-28 | 住友電気工業株式会社 | 量子カスケード半導体レーザ |
JP6939119B2 (ja) * | 2017-06-19 | 2021-09-22 | 住友電気工業株式会社 | 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法 |
US10404038B2 (en) * | 2017-06-22 | 2019-09-03 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
US10476237B2 (en) * | 2017-06-22 | 2019-11-12 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
US10476235B2 (en) * | 2017-06-22 | 2019-11-12 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
DE102018125493A1 (de) * | 2018-10-15 | 2020-04-16 | Osram Opto Semiconductors Gmbh | Kantenemittierender halbleiterlaser und verfahren zur herstellung eines kantenemittierenden halbleiterlasers |
US20210313760A1 (en) * | 2020-04-06 | 2021-10-07 | Asahi Kasei Kabushiki Kaisha | Method for manufacturing semiconductor laser diode and semiconductor laser diode |
CN114825045B (zh) * | 2022-06-24 | 2022-09-23 | 度亘激光技术(苏州)有限公司 | 抗反射激光器及其制备方法 |
Citations (3)
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JPS61265888A (ja) * | 1985-05-20 | 1986-11-25 | Nec Corp | 半導体レ−ザの製造方法 |
JPH01201980A (ja) * | 1988-02-05 | 1989-08-14 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
JPH02100391A (ja) * | 1988-10-07 | 1990-04-12 | Mitsubishi Electric Corp | 半導体レーザ |
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-
2006
- 2006-06-01 EP EP06771742.1A patent/EP1886388B1/en active Active
- 2006-06-01 WO PCT/US2006/021132 patent/WO2006130700A2/en active Application Filing
- 2006-06-01 US US11/444,414 patent/US7957445B2/en active Active
- 2006-06-01 JP JP2008514811A patent/JP2008543090A/ja active Pending
- 2006-06-01 CN CN2006800196222A patent/CN101189768B/zh active Active
-
2011
- 2011-06-06 US US13/154,097 patent/US8249122B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61265888A (ja) * | 1985-05-20 | 1986-11-25 | Nec Corp | 半導体レ−ザの製造方法 |
JPH01201980A (ja) * | 1988-02-05 | 1989-08-14 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
JPH02100391A (ja) * | 1988-10-07 | 1990-04-12 | Mitsubishi Electric Corp | 半導体レーザ |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019004106A (ja) * | 2017-06-19 | 2019-01-10 | 住友電気工業株式会社 | 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101189768B (zh) | 2010-06-16 |
WO2006130700A2 (en) | 2006-12-07 |
US20110317734A1 (en) | 2011-12-29 |
US8249122B2 (en) | 2012-08-21 |
US7957445B2 (en) | 2011-06-07 |
CN101189768A (zh) | 2008-05-28 |
WO2006130700A3 (en) | 2007-11-01 |
EP1886388B1 (en) | 2015-03-18 |
US20060274804A1 (en) | 2006-12-07 |
EP1886388A2 (en) | 2008-02-13 |
EP1886388A4 (en) | 2013-04-10 |
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