JP2008534414A - 非鉄金属材料の結晶化の為の装置及び方法 - Google Patents
非鉄金属材料の結晶化の為の装置及び方法 Download PDFInfo
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- JP2008534414A JP2008534414A JP2008502280A JP2008502280A JP2008534414A JP 2008534414 A JP2008534414 A JP 2008534414A JP 2008502280 A JP2008502280 A JP 2008502280A JP 2008502280 A JP2008502280 A JP 2008502280A JP 2008534414 A JP2008534414 A JP 2008534414A
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- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 239000007769 metal material Substances 0.000 title claims description 30
- 238000002425 crystallisation Methods 0.000 title claims description 17
- 230000008025 crystallization Effects 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims description 11
- 238000001816 cooling Methods 0.000 claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 238000002844 melting Methods 0.000 claims abstract description 11
- 230000008018 melting Effects 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000000112 cooling gas Substances 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 10
- 239000012809 cooling fluid Substances 0.000 claims description 5
- 238000013082 photovoltaic technology Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- -1 ferrous metals Chemical class 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 36
- 230000007704 transition Effects 0.000 description 6
- 230000006798 recombination Effects 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
2 非鉄金属材料
3 容器(モールド)
4 内部空間
5 外側面(モールド‐ベース)
6 外側面(モールド側壁)
7 外側面(モールド端壁)
8 外側面(モールド口)
9 加熱エレメント
10 冷却エレメント
11 冷却パイプ
12 冷却流体(冷却ガス)
13 バルブ
14 ポンプ
Claims (12)
- 非鉄金属材料、特にシリコンの溶融及び/または結晶化の為の装置にして、
‐非鉄金属材料(2)を収容する為の容器(3)、
‐非鉄金属材料(2)への熱の能動的な供給の為の、少なくとも1つの制御可能な加熱エレメント(9)、及び
‐非鉄金属材料(2)からの熱の能動的な排出の為の、少なくとも1つの制御可能な冷却エレメント(10)
を有する装置。 - 請求項1に記載の装置において、容器(3)が本質的に6つの外側面(5、6、7、8)を持つ直方体形状を有することを特徴とする装置。
- 請求項2に記載の装置において、少なくとも1つの冷却エレメント(10)が本質的に平面に且つ少なくとも1つの外側面(5、6、7、8)に対して平行に配設されることを特徴とする装置。
- 請求項2又は3に記載の装置において、少なくとも1つの冷却エレメント(10)が、少なくとも、少なくとも1つの外側面(8)に配設され、上記外側面に対し容器(3)が開いていることを特徴とする装置。
- 請求項2から4のいずれか1項に記載の装置において、2つの冷却エレメント(10)がそれぞれ、互いに向かい合う外側面(5、6、7、8)に配設されることを特徴とする装置。
- 請求項1から5のいずれか1項に記載の装置において、少なくとも1つの冷却エレメント(10)が、容器(3)と少なくとも1つの加熱エレメント(9)の間に配設されることを特徴とする装置。
- 請求項1から6のいずれか1項に記載の装置において、少なくとも1つの冷却エレメント(10)が、冷却ガス(12)を貫流する為、少なくとも1つの冷却パイプ(11)を有することを特徴とする装置。
- 請求項2に記載の装置において、少なくとも1つの加熱エレメント(9)及び/または少なくとも1つの冷却エレメント(10)が、少なくとも1つの外側面(5、6、7、8)に沿って移動可能であることを特徴とする装置。
- 非鉄金属材料、特にシリコンの溶融及び/または結晶化の為の方法にして、
‐固体及び/または液状の非鉄金属材料(2)を収容する為の容器(3)を準備する、
‐容器(3)内で非鉄金属材料(2)を溶融する、又は既に溶融された液状の非鉄金属材料(2)を容器(3)へ注入する、
‐少なくとも1つの制御可能な冷却エレメント(10)によって、液状の非鉄金属材料(2)から熱を能動的に排出する、そして
‐熱の排出を制御することで、容器(3)内で液状の非鉄金属材料(2)を制御して結晶化する、
という工程を有することを特徴とする方法。 - 請求項9に記載の方法において、少なくとも1つの冷却エレメント(10)が少なくとも部分的に冷却流体(12)によって貫流されることを特徴とする方法。
- 請求項10に記載の方法において、能動的な熱の排出が、冷却流体(12)の圧及び/または冷却流体(12)の貫流量によって制御されることを特徴とする方法。
- 請求項9から11のいずれか1項に記載の方法によって結晶化された非鉄金属材料(2)、特にシリコンの光起電力技術における使用法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005013410A DE102005013410B4 (de) | 2005-03-23 | 2005-03-23 | Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen |
PCT/EP2006/002258 WO2006099955A1 (de) | 2005-03-23 | 2006-03-11 | Vorrichtung und verfahren zum kristallisieren von nichteisenmetallen |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008534414A true JP2008534414A (ja) | 2008-08-28 |
JP2008534414A5 JP2008534414A5 (ja) | 2008-12-11 |
Family
ID=36190440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008502280A Pending JP2008534414A (ja) | 2005-03-23 | 2006-03-11 | 非鉄金属材料の結晶化の為の装置及び方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7981214B2 (ja) |
EP (1) | EP1866247B1 (ja) |
JP (1) | JP2008534414A (ja) |
AT (1) | ATE440804T1 (ja) |
DE (2) | DE102005013410B4 (ja) |
NO (1) | NO20075331L (ja) |
WO (1) | WO2006099955A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008051492A1 (de) | 2008-10-13 | 2010-04-15 | Pva Tepla Ag | Vorrichtung zum Kristallisieren von Nicht-Eisen-Metallen |
DE102009039070B4 (de) | 2009-08-27 | 2016-05-04 | Solarworld Innovations Gmbh | Verfahren ung Vorrichtung zur Entfernung von Verunreinigungen aus einer Schmelze |
DE102009044893B4 (de) * | 2009-12-14 | 2014-10-30 | Hanwha Q.CELLS GmbH | Herstellungsverfahren zur Herstellung eines Kristallkörpers aus einem Halbleitermaterial |
DE102010014724B4 (de) * | 2010-04-01 | 2012-12-06 | Deutsche Solar Gmbh | Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken |
DE102010029741B4 (de) | 2010-06-07 | 2013-02-28 | Solarworld Innovations Gmbh | Verfahren zum Herstellen von Silizium-Wafern, Silizium Wafer und Verwendung eines Silizium-Wafer als Silizium-Solarzelle |
DE102010030124B4 (de) | 2010-06-15 | 2016-07-28 | Solarworld Innovations Gmbh | Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken sowie nach dem Verfahren hergestellter Silizium-Block |
DE102011002598B4 (de) | 2011-01-12 | 2016-10-06 | Solarworld Innovations Gmbh | Verfahren zur Herstellung eines Silizium-Ingots |
DE102011002599B4 (de) | 2011-01-12 | 2016-06-23 | Solarworld Innovations Gmbh | Verfahren zur Herstellung eines Silizium-Ingots und Silizium-Ingot |
DE102011005503B4 (de) | 2011-03-14 | 2018-11-15 | Solarworld Industries Gmbh | Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken |
ITVI20110076A1 (it) * | 2011-04-01 | 2012-10-02 | Ieco Keeps On Improving S R L | Macchina per la formatura di barre metalliche |
DE102011082628B4 (de) | 2011-09-13 | 2018-10-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken |
DE102011086669B4 (de) | 2011-11-18 | 2016-08-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von Silizium-Blöcken sowie Silizium-Block |
DE102011087759B4 (de) | 2011-12-05 | 2018-11-08 | Solarworld Industries Gmbh | Verfahren zur Herstellung von Silizium-Ingots und Silizium-Ingot |
DE102012203706B4 (de) | 2012-02-06 | 2016-08-11 | Solarworld Innovations Gmbh | Verfahren zur Herstellung von Silizium-Ingots, Verfahren zur Herstellung von Keimvorlagen, Keimkristall und dessen Verwendung sowie Schmelztiegel |
DE102012203527B4 (de) | 2012-03-06 | 2016-10-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von Silizium-Ingots |
DE102012203524B4 (de) | 2012-03-06 | 2016-10-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von Silizium-Ingots |
DE102012209005B4 (de) | 2012-05-29 | 2016-11-17 | Solarworld Innovations Gmbh | Keimvorlage und Verfahren zur Herstellung derselben sowie Vorrichtung und Verfahren zur Herstellung eines Silizium-Ingots |
US8936652B2 (en) | 2012-12-20 | 2015-01-20 | Solarworld Industries America Inc. | Method for manufacturing silicon blocks |
DE102013203740B4 (de) | 2013-03-05 | 2020-06-18 | Solarworld Industries Gmbh | Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken |
ITTO20130258A1 (it) * | 2013-03-28 | 2014-09-29 | Saet Spa | Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale |
EP2982780B1 (de) | 2014-08-04 | 2019-12-11 | Heraeus Quarzglas GmbH & Co. KG | Verfahren zur herstellung eines siliziumblocks, zur verfahrensdurchführung geeignete kokille aus quarzglas oder quarzgut sowie verfahren für deren herstellung |
CN108441939A (zh) * | 2018-03-23 | 2018-08-24 | 孟静 | 稳态晶体生长方法 |
ES2940919A1 (es) * | 2023-02-24 | 2023-05-12 | Univ Madrid Politecnica | Cámara de enfriamiento de lingotes metálicos y procedimiento de obtención de un lingote metálico |
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2005
- 2005-03-23 DE DE102005013410A patent/DE102005013410B4/de not_active Expired - Fee Related
-
2006
- 2006-03-11 US US11/816,943 patent/US7981214B2/en not_active Expired - Fee Related
- 2006-03-11 WO PCT/EP2006/002258 patent/WO2006099955A1/de not_active Application Discontinuation
- 2006-03-11 DE DE502006004664T patent/DE502006004664D1/de active Active
- 2006-03-11 AT AT06723370T patent/ATE440804T1/de active
- 2006-03-11 EP EP06723370A patent/EP1866247B1/de not_active Not-in-force
- 2006-03-11 JP JP2008502280A patent/JP2008534414A/ja active Pending
-
2007
- 2007-10-18 NO NO20075331A patent/NO20075331L/no not_active Application Discontinuation
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DE3323896A1 (de) * | 1983-07-02 | 1985-01-17 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum gerichteten erstarren von schmelzen |
JP2000001308A (ja) * | 1998-06-15 | 2000-01-07 | Sharp Corp | 多結晶シリコン鋳塊の製造方法及びその製造装置 |
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Also Published As
Publication number | Publication date |
---|---|
DE502006004664D1 (de) | 2009-10-08 |
DE102005013410B4 (de) | 2008-01-31 |
DE102005013410A1 (de) | 2006-09-28 |
EP1866247B1 (de) | 2009-08-26 |
EP1866247A1 (de) | 2007-12-19 |
WO2006099955A1 (de) | 2006-09-28 |
ATE440804T1 (de) | 2009-09-15 |
US7981214B2 (en) | 2011-07-19 |
US20080264207A1 (en) | 2008-10-30 |
NO20075331L (no) | 2007-12-18 |
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