JP2008523603A - 燃焼化学気相成長法の基板温度制御 - Google Patents
燃焼化学気相成長法の基板温度制御 Download PDFInfo
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- JP2008523603A JP2008523603A JP2007545058A JP2007545058A JP2008523603A JP 2008523603 A JP2008523603 A JP 2008523603A JP 2007545058 A JP2007545058 A JP 2007545058A JP 2007545058 A JP2007545058 A JP 2007545058A JP 2008523603 A JP2008523603 A JP 2008523603A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
1)サセプタ(基板支持板すなわち基板ホルダ)とコーティングされるホイルとの間での導電性の伝熱を維持しながら基板及びバーナーを相互に移動させる手順、及び、サセプタ温度を維持する手順、によって発見された。
d)複数の“手段”は、同一項目、又はハードウエア若しくはソフトウエアによって実装された構造若しくは機能によって表されて良い。
e)開示された素子の各々は、ハードウエア部分(たとえば個別の電子回路)、ソフトウエア部分(たとえばコンピュータプログラム)又はそれらの結合を有して良い。
f)ハードウエア部分は、アナログ及びデジタル部分のいずれか又は両方を有して良い。
g)個別の装置又はその部分のいずれも、特に言及がなければ、1つに結合可能であり、又はさらに他の部品に分けることも可能である。
h)動作に関する特別な順序は、特に言及がなければ、求めていない。
Claims (13)
- 基板に材料を成膜する方法であって:
表面を有する基板を供する基板提供手順;
前記表面を基板ホルダに固着させる固着手順;
前記基板ホルダを介して前記基板の導電性冷却を維持する冷却維持手順;及び
燃焼化学気相成長処理で、前記基板をバーナーからある位置に位置設定することによって、試薬である混合物に曝露する曝露手順;
を有し、
前記距離は、前記燃焼化学気相成長中、前記基板の温度が50℃から600℃となる距離である、
方法。 - 前記バーナーからの前記距離が約10-20mmである、請求項1に記載の方法。
- 前記バーナーからの前記距離が約10mmである、請求項2に記載の方法。
- 前記バーナーからの前記距離で前記基板を動かす基板移動手順を有する、請求項1に記載の方法。
- 前記基板移動手順が、前記バーナーに対して30-200mm/秒の速度で前記基板を動かす手順を有する、請求項4に記載の方法。
- 前記基板が高分子を有し、かつ、200℃未満の温度に維持されている、請求項4に記載の方法。
- 前記基板ホルダを冷却することによって、前記基板の導電性冷却を維持する手順;及び
前記基板と前記基板ホルダとの間での接触が維持されていることを保証する手順;
を有する、請求項1に記載の方法。 - 前記基板が高分子を有し、かつ、200℃未満の温度に維持されている、請求項4に記載の方法。
- 燃焼化学気相成長の試薬混合物を燃焼地点に供給する手段を有するバーナー;
基板ホルダ;
前記燃焼地点から前記基板ホルダによって保持されている基板への距離を制御する手段;
前記基板を前記基板ホルダに固着する手段;及び
前記基板ホルダを介して前記基板からの熱伝導を維持する手段;
を有する装置。 - 前記燃焼地点からの前記距離で前記基板を動かす手段を有する、請求項9に記載の装置。
- 前記基板を動かす前記手段が、30-200mm/秒の速度で前記基板を動かす手段を有する、請求項10に記載の装置。
- 前記距離が10-20mmの範囲内にある、請求項9に記載の装置。
- 前記距離が約10mmである、請求項12に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63524504P | 2004-12-10 | 2004-12-10 | |
PCT/IB2005/054103 WO2006061785A2 (en) | 2004-12-10 | 2005-12-07 | Combustion chemical vapor deposition on temperature-sensitive substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008523603A true JP2008523603A (ja) | 2008-07-03 |
Family
ID=36337426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007545058A Pending JP2008523603A (ja) | 2004-12-10 | 2005-12-07 | 燃焼化学気相成長法の基板温度制御 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20100151130A1 (ja) |
EP (1) | EP1874978A2 (ja) |
JP (1) | JP2008523603A (ja) |
WO (1) | WO2006061785A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016092308A (ja) * | 2014-11-07 | 2016-05-23 | 株式会社アルバック | 基板温度制御装置、基板処理システム、及び、基板温度制御方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130252373A1 (en) * | 2010-08-27 | 2013-09-26 | Ocas Onderzoekscentrum Voor Aanwending Van Staal N.V. | Method for Depositing a Coating on a Substrate by Chemical Vapour Deposition |
ES2449370T3 (es) * | 2011-03-04 | 2014-03-19 | Onderzoekscentrum Voor Aanwending Van Staal N.V. | Procedimiento de deposición de un revestimiento sobre un sustrato por deposición química de vapor |
GB201108244D0 (en) * | 2011-05-17 | 2011-06-29 | Pilkington Group Ltd | Burner for flame coating |
US9040120B2 (en) * | 2011-08-05 | 2015-05-26 | Frito-Lay North America, Inc. | Inorganic nanocoating primed organic film |
KR101359259B1 (ko) * | 2011-12-27 | 2014-02-06 | 주식회사 포스코 | 내흑변성 및 밀착력이 우수한 Zn-Mg 합금 코팅강판 및 그 제조방법 |
US9267011B2 (en) | 2012-03-20 | 2016-02-23 | Frito-Lay North America, Inc. | Composition and method for making a cavitated bio-based film |
US8862923B1 (en) | 2012-03-30 | 2014-10-14 | Emc Corporation | Method and apparatus to determine an idle state of a device set based on availability requirements corresponding to the device set |
US9021275B1 (en) * | 2012-03-30 | 2015-04-28 | Emc Corporation | Method and apparatus to exercise and manage a related set of power managed storage devices |
US9284104B2 (en) | 2012-06-23 | 2016-03-15 | Frito-Lay North America, Inc. | Deposition of ultra-thin inorganic oxide coatings on packaging |
US9149980B2 (en) | 2012-08-02 | 2015-10-06 | Frito-Lay North America, Inc. | Ultrasonic sealing of packages |
US9090021B2 (en) | 2012-08-02 | 2015-07-28 | Frito-Lay North America, Inc. | Ultrasonic sealing of packages |
US9988713B2 (en) | 2013-03-12 | 2018-06-05 | Arizona Board Of Regents On Behalf Of Arizona State University | Thin film devices and methods for preparing thin film devices |
US9559249B2 (en) | 2014-07-22 | 2017-01-31 | Arizona Board Of Regents | Microwave-annealed indium gallium zinc oxide films and methods of making the same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2597497B2 (ja) * | 1988-01-14 | 1997-04-09 | 洋一 広瀬 | 気相法ダイヤモンドの合成法 |
GB2243150B (en) * | 1990-03-28 | 1994-06-29 | Kobe Steel Ltd | Method for synthesizing diamond by combustion |
US5085904A (en) * | 1990-04-20 | 1992-02-04 | E. I. Du Pont De Nemours And Company | Barrier materials useful for packaging |
US5215788A (en) * | 1990-07-06 | 1993-06-01 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Combustion flame method for forming diamond films |
DE69125118T2 (de) * | 1990-12-15 | 1997-06-19 | Fujitsu Ltd | Verfahren zur Herstellung eines Diamant-Überzuges |
DE69432175T2 (de) * | 1993-03-24 | 2004-03-04 | Georgia Tech Research Corp. | Verfahren und vorrichtung zur verbrennungs cvd von filmen und beschichtungen |
KR100479485B1 (ko) * | 1995-08-04 | 2005-09-07 | 마이크로코팅 테크놀로지, 인크. | 근초임계및초임계유동용액의열적분무를이용한화학증착및분말형성 |
JPH09326385A (ja) * | 1996-06-04 | 1997-12-16 | Tokyo Electron Ltd | 基板冷却方法 |
US6368665B1 (en) * | 1998-04-29 | 2002-04-09 | Microcoating Technologies, Inc. | Apparatus and process for controlled atmosphere chemical vapor deposition |
WO2002014579A1 (en) * | 2000-08-10 | 2002-02-21 | Corning Incorporated | Method for depositing a glass layer on a substrate |
US7351449B2 (en) * | 2000-09-22 | 2008-04-01 | N Gimat Co. | Chemical vapor deposition methods for making powders and coatings, and coatings made using these methods |
US6849306B2 (en) * | 2001-08-23 | 2005-02-01 | Konica Corporation | Plasma treatment method at atmospheric pressure |
US20050126338A1 (en) * | 2003-02-24 | 2005-06-16 | Nanoproducts Corporation | Zinc comprising nanoparticles and related nanotechnology |
-
2005
- 2005-12-07 EP EP05823192A patent/EP1874978A2/en not_active Withdrawn
- 2005-12-07 US US11/720,851 patent/US20100151130A1/en not_active Abandoned
- 2005-12-07 WO PCT/IB2005/054103 patent/WO2006061785A2/en active Application Filing
- 2005-12-07 JP JP2007545058A patent/JP2008523603A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016092308A (ja) * | 2014-11-07 | 2016-05-23 | 株式会社アルバック | 基板温度制御装置、基板処理システム、及び、基板温度制御方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100151130A1 (en) | 2010-06-17 |
EP1874978A2 (en) | 2008-01-09 |
WO2006061785A2 (en) | 2006-06-15 |
WO2006061785A3 (en) | 2006-08-31 |
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