JP2008516389A - Multi-nozzle crucible device for organic light emitting diode deposition process - Google Patents

Multi-nozzle crucible device for organic light emitting diode deposition process Download PDF

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JP2008516389A
JP2008516389A JP2007535591A JP2007535591A JP2008516389A JP 2008516389 A JP2008516389 A JP 2008516389A JP 2007535591 A JP2007535591 A JP 2007535591A JP 2007535591 A JP2007535591 A JP 2007535591A JP 2008516389 A JP2008516389 A JP 2008516389A
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ファン，チャン−フン
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ドゥサン ディーエヌディー カンパニー リミテッド
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Organic Chemistry (AREA)
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Abstract

本発明は、ＯＬＥＤ蒸着工程用蒸発ソースとして用いられるるつぼ装置に関するもので、特に、蒸着工程時の有機物質の蒸発のためにるつぼを加熱し、その有機蒸気が、るつぼと対向して位置する基板に均一に蒸着されるようにするために、有機蒸発物質の蒸発方向と蒸発量を制御するマルチノズル部（４０）と、上部が開口された円筒形るつぼ（５０）とが結合されて構成され、特に、ＯＬＥＤ蒸着工程時に、薄膜の均一性を向上させ、かつ、有機物質の使用効率を高める。
The present invention relates to a crucible device used as an evaporation source for an OLED vapor deposition process, and more particularly, a substrate that heats a crucible for evaporation of an organic substance during the vapor deposition process, and the organic vapor is positioned opposite to the crucible. The multi-nozzle part (40) for controlling the evaporation direction and the evaporation amount of the organic evaporating substance and the cylindrical crucible (50) opened at the upper part are combined to be uniformly deposited on the substrate. Especially, during the OLED deposition process, the uniformity of the thin film is improved and the use efficiency of the organic substance is increased.

Description

本発明は、ＯＬＥＤ（Ｏｒｇａｎｉｃ Ｌｉｇｈｔ Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ）の薄膜の製作において、ＯＬＥＤ蒸着工程用の蒸発ソース内に設置されるるつぼ装置に関するもので、蒸着工程時の有機物質の蒸発のためにるつぼを加熱し、その有機蒸気が、るつぼと対向して位置する基板に均一に蒸着されるようにすることに関する。   The present invention relates to a crucible device installed in an evaporation source for an OLED deposition process in the manufacture of an OLED (Organic Light Emitting Diode) thin film, and heats the crucible for the evaporation of organic substances during the deposition process. The organic vapor is uniformly deposited on a substrate located opposite the crucible.

有機ＥＬディスプレイ素子のＯＬＥＤ蒸着工程に主として用いられてきた方法は、高真空蒸着方法であって、有機物質を、るつぼに対向して位置する基板に蒸着しコーティングすべく、有機物質の入っているるつぼを加熱して有機物質を蒸発させ、その蒸気をるつぼの上部に位置したガラス基板に蒸着させることによって薄膜を製作する。このとき、有機物質の汚染を防止し、素子の寿命を長くする他、蒸着率の適切な調節のために、主に高真空雰囲気の真空チャンバー中で工程が行われる。   A method mainly used in the OLED deposition process of an organic EL display element is a high vacuum deposition method, in which an organic substance is contained in order to deposit and coat an organic substance on a substrate located opposite to a crucible. A thin film is fabricated by heating the crucible to evaporate the organic material and depositing the vapor on a glass substrate located on top of the crucible. At this time, the process is mainly performed in a vacuum chamber in a high vacuum atmosphere in order to prevent contamination of organic substances and extend the lifetime of the device and to appropriately adjust the deposition rate.

図１は、ポイントソース（ｐｏｉｎｔ ｓｏｕｒｃｅ）またはポイント蒸発ソースを使用する一般の蒸着方法を示す図で、主として、パウダー状の有機物質の入っているるつぼ１０が、真空チャンバー内の下側において上に向けて配置され、基板２０が、真空チャンバー内の上側において下に向けて配置されている。ここで、加熱されたるつぼからの有機蒸気は、基板まで飛行して基板上に凝固されながら薄膜が形成される。このようなポイントソースるつぼは、製作が容易なことから研究用に広く用いられてきたが、これによると、ＯＬＥＤ基板の量産時には、有機蒸気が基板２０の周縁部よりも基板２０の中央部に多く蒸着されて凸状の薄膜が形成され、低い薄膜均一度（１５％）が得られる。   FIG. 1 shows a general deposition method using a point source or a point evaporation source, in which a crucible 10 containing mainly a powdery organic substance is placed on the lower side in a vacuum chamber. The substrate 20 is disposed so as to face downward on the upper side in the vacuum chamber. Here, the organic vapor from the heated crucible flies to the substrate and solidifies on the substrate to form a thin film. Such a point source crucible has been widely used for research because it is easy to manufacture, but according to this, when mass-producing the OLED substrate, the organic vapor is located in the central portion of the substrate 20 rather than the peripheral portion of the substrate 20. A large amount is deposited to form a convex thin film, and a low film uniformity (15%) is obtained.

上記の問題点を改善するために、図２に示すように、基板２０を基板回転装置３０に載置して基板の回転を可能にし、るつぼ（Ａ）のポイントソース１１を、基板の中心軸から一定距離離れたオフセット距離（Ｘ）に配置させて蒸着工程を行う方法が提案された。この時、有機薄膜の均一度を維持するように、るつぼから基板までの距離を一定の蒸着高さ(Ｙ)に保つ。なお、高い薄膜均一度(５％以下)を得るためには、別のるつぼ（Ｂ）のポイントソース１２を、基板の中心から一定距離離れた位置に設置する、または、蒸着高さをより大きくした後、基板を回転させて有機薄膜の均一度を向上させてきた。しかし、この場合、これらのるつぼと中心軸及び基板との距離が遠すぎるため、有機物質の使用効率が低下し、高真空チャンバーの大きさか増加するという問題点があった。   In order to improve the above problem, as shown in FIG. 2, the substrate 20 is placed on the substrate rotating device 30 to enable the rotation of the substrate, and the point source 11 of the crucible (A) is placed on the central axis of the substrate. A method has been proposed in which the deposition process is performed at an offset distance (X) that is a certain distance away from the substrate. At this time, the distance from the crucible to the substrate is maintained at a constant deposition height (Y) so as to maintain the uniformity of the organic thin film. In order to obtain high thin film uniformity (5% or less), the point source 12 of another crucible (B) is installed at a position away from the center of the substrate by a certain distance, or the deposition height is increased. After that, the uniformity of the organic thin film has been improved by rotating the substrate. However, in this case, since the distance between the crucible, the central axis, and the substrate is too far, there is a problem that the use efficiency of the organic material is lowered and the size of the high vacuum chamber is increased.

本発明は、上記の問題点を解消するために、ＯＬＥＤ蒸着工程において蒸発源として用いられるマルチノズルるつぼ装置を提供するためのもので、特に、ＯＬＥＤ蒸着工程において、対向する基板へのＯＬＥＤ蒸着時の薄膜厚さの均一度を向上させ、かつ、有機物質の使用効率を高めることができるＯＬＥＤ蒸着工程に用いられるるつぼの構造を提供することに目的がある。   The present invention is to provide a multi-nozzle crucible device used as an evaporation source in an OLED vapor deposition process in order to solve the above-mentioned problems, and in particular, in the OLED vapor deposition process, during the OLED vapor deposition on the opposite substrate. An object of the present invention is to provide a crucible structure used in an OLED vapor deposition process that can improve the uniformity of the thin film thickness and increase the use efficiency of organic substances.

上記目的を達成するために、本発明は、有機蒸気の蒸発方向を決定する円筒形ノズルが均一に整列されたマルチノズル部４０と、上部が開口された円筒形状を有し、有機パウダーが収容されるるつぼ５０とで構成され、また、マルチノズル部及びるつぼから有機パウダーに伝達される熱によって有機蒸気を生成させる方法を提供する。   In order to achieve the above object, the present invention has a multi-nozzle portion 40 in which cylindrical nozzles for determining the evaporation direction of organic vapor are uniformly arranged, and a cylindrical shape having an upper opening, and contains organic powder. And a method of generating an organic vapor by heat transferred from the multi-nozzle part and the crucible to the organic powder.

以下、本発明の実施形態について、添付図面を参照しつつ詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

図３は、本発明のＯＬＥＤ蒸着工程用のマルチノズルるつぼ装置のマルチノズル部４０を示す断面図であり、図４は、円筒形るつぼの断面図であり、図５は、本発明のマルチノズルるつぼの一実施例を示す概略図である。本発明は、複数個の小さい円錐形のノズル４１を有し、下部が開口された円筒形のマルチノズル部４０と、上部が開口され、一つの大きい円筒形からなって、マルチノズル部４０と結合されるるつぼ５０と、で構成されることを技術上の特徴とする。   FIG. 3 is a cross-sectional view showing a multi-nozzle portion 40 of a multi-nozzle crucible apparatus for OLED deposition process of the present invention, FIG. 4 is a cross-sectional view of a cylindrical crucible, and FIG. 5 is a multi-nozzle of the present invention. It is the schematic which shows one Example of a crucible. The present invention includes a plurality of small conical nozzles 41 having a cylindrical multi-nozzle portion 40 having an opening at the bottom and a single large cylindrical shape having an opening at the top. It is technically characterized by being composed of a crucible 50 to be joined.

図３（ａ）は、マルチノズル部の４０平面図であり、複数個の円錐形のノズルが円筒形の周縁部に沿って均一に整列され、熱線からより多い熱を吸収できるように最大表面積としてノズル同士間に溝４２を形成する。すなわち、マルチノズル部がるつぼよりも高い温度を維持するようにして、有機蒸気がノズルを通じて噴き出される際にノズルの壁に凝固されてノズルを詰まらせる現象を防止する。これは、一般に有機物は自分の蒸発温度よりも低い温度では凝固しがちなためである。   FIG. 3 (a) is a 40 plan view of the multi-nozzle section, where the plurality of conical nozzles are evenly aligned along the periphery of the cylinder and can absorb more heat from the heat rays. A groove 42 is formed between the nozzles. In other words, the temperature of the multi-nozzle part is maintained higher than that of the crucible, thereby preventing a phenomenon that the nozzle is clogged by being solidified on the wall of the nozzle when the organic vapor is ejected through the nozzle. This is because organic substances generally tend to solidify at a temperature lower than their evaporation temperature.

図３（ｂ）は、マルチノズル部４０の側断面図であり、上述した複数の溝４２が、マルチノズル部の外部側面に掘り込まれた様子を示す。マルチノズル部の一端部は開口され、円筒形のるつぼの上部と結合されるようにする。   FIG. 3B is a side sectional view of the multi-nozzle part 40, and shows a state in which the plurality of grooves 42 described above are dug into the outer side surface of the multi-nozzle part. One end of the multi-nozzle part is opened so as to be coupled with the upper part of the cylindrical crucible.

図４は、円筒形るつぼ５０の断面図であり、るつぼは、有機粉末物質を入れるように上部が開口された円筒形の構造を有する。また、るつぼの底には、るつぼの中央に向けて円筒形の温度測定線固定溝５１が形成され、るつぼの加熱時に、温度測定線を溝５１に押込んでるつぼの底に接するようにすることによって、るつぼ表面の温度を測定し、その温度信号を熱制御器に送って、るつぼに供給する熱の量を制御するようにする。また、円筒形るつぼ５０の内部には、上部中央に向けて円筒形の突出部５２が形成され、この突出部より内部の有機パウダーへ均一に熱が伝達されるようにして、有機パウダーの均一な蒸発を図る。   FIG. 4 is a cross-sectional view of a cylindrical crucible 50. The crucible has a cylindrical structure with an upper portion opened to contain an organic powder material. In addition, a cylindrical temperature measurement line fixing groove 51 is formed at the bottom of the crucible toward the center of the crucible, and when the crucible is heated, the temperature measurement line is pushed into the groove 51 so as to be in contact with the bottom of the crucible. To measure the temperature of the crucible surface and send the temperature signal to a thermal controller to control the amount of heat supplied to the crucible. In addition, a cylindrical protrusion 52 is formed inside the cylindrical crucible 50 toward the center of the upper part, and heat is uniformly transferred from the protrusion to the internal organic powder so that the organic powder is uniformly distributed. Evaporate properly.

図５には、マルチノズル部４０の下部と円筒形るつぼ５０の上部とが結合された状態を示し、これらの２部分の連結部位を、係止突起やねじ山を回す方式で完全にシールすることによって、有機物質の漏れを防止することができる。   FIG. 5 shows a state in which the lower part of the multi-nozzle part 40 and the upper part of the cylindrical crucible 50 are joined, and the connection part of these two parts is completely sealed by turning a locking projection or a screw thread. Thus, leakage of the organic substance can be prevented.

マルチノズル部４０を構成する複数個のノズル４１は、内部と通じるように形成され、各ノズルの中心軸とマルチノズル部４０の中心軸間の角度が０゜〜９０゜の範囲で斜線方向に形成されるようにすることによって角度とノズルの大きさを異ならせ、これにより、ノズルから噴き出される有機蒸気の方向などを制御し、薄膜厚さの均一度を向上させることができる。このとき、各ノズルの大きさは、長さ方向に増加する幅とすることが好ましい。以下、上記のマルチノズル部４０を用いて薄膜厚さの均一度を確保する動作原理について説明する。   The plurality of nozzles 41 constituting the multi-nozzle part 40 are formed so as to communicate with the inside, and the angle between the central axis of each nozzle and the central axis of the multi-nozzle part 40 is in the oblique direction in the range of 0 ° to 90 °. By forming it, the angle and the size of the nozzle can be made different, thereby controlling the direction of the organic vapor ejected from the nozzle and improving the uniformity of the thin film thickness. At this time, the size of each nozzle is preferably a width that increases in the length direction. Hereinafter, the operation principle for ensuring the uniformity of the thin film thickness using the multi-nozzle portion 40 will be described.

一般のポイントソースるつぼでは、有機蒸気が、狭い開口部から蒸発されて、るつぼの開口方向を中心として放射状に拡散する。このため、開口の外部に向く中心線方向へ、斜線方向よりもはるかに多量の蒸発物質が拡散され、また、実際に蒸着がなされるガラス基板の中央から外側方向に行くほど、蒸発源との距離が遠くなり、有機蒸気の拡散方向と基板面との角度も大きくなるため、基板中央における薄膜厚さが外側の部分におけるそれよりも厚くなり、基板全体にわたって均一な薄膜厚さが得難かった。そこで、薄膜厚さの均一度を得るために、基板を回転させたり、ポイントソースの位置を傾けたりする方式が使用されたこともあるが、有機物質の使用効率が顕著に低下してしまう。   In a general point source crucible, organic vapor is evaporated from a narrow opening and diffuses radially around the opening direction of the crucible. For this reason, a much larger amount of evaporation material is diffused in the direction of the center line facing the outside of the opening than in the oblique direction, and the distance from the evaporation source to the outer side from the center of the glass substrate where the vapor deposition is actually performed is increased. Since the distance increases and the angle between the organic vapor diffusion direction and the substrate surface also increases, the thin film thickness at the center of the substrate is thicker than that at the outer part, making it difficult to obtain a uniform thin film thickness over the entire substrate. . Thus, in order to obtain the uniformity of the thin film thickness, a method of rotating the substrate or tilting the position of the point source has been used, but the use efficiency of the organic substance is significantly reduced.

これに対し、図３に示すように、本発明によるマルチノズルるつぼ装置を用いる蒸発ソースでは、マルチノズル部４０のノズル４１が円筒形や円錐形に製作され、ノズルの角度と大きさに応じて有機蒸気の蒸発方向と量を調節できるため、基板の周縁部により多い蒸発物質が蒸着され、また、有機蒸気の拡散方向と基板との角度による影響は、基板の中央部分を適当な厚さに制御する効果をもたらすため、ポイントソースるつぼを用いる時と違い、基板を回転させることなく基板全体にわたって均一に薄膜を蒸着することが可能になる。   On the other hand, as shown in FIG. 3, in the evaporation source using the multi-nozzle crucible device according to the present invention, the nozzle 41 of the multi-nozzle part 40 is manufactured in a cylindrical shape or a conical shape, depending on the angle and size of the nozzle. Since the evaporation direction and amount of organic vapor can be adjusted, more evaporation material is deposited on the peripheral edge of the substrate, and the influence of the organic vapor diffusion direction and the angle between the substrate and the central portion of the substrate is adjusted to an appropriate thickness. Unlike the case of using a point source crucible, it is possible to deposit a thin film uniformly over the entire substrate without rotating the substrate because of the effect of controlling.

あるいは、図６に示すように、ノズル栓６０を用いてマルチノズル部４０の特定のノズルを塞ぎ、噴き出される有機蒸気の方向と量を調節して特定のノズルのみから有機蒸気が噴き出されるようにすることによって、るつぼと基板間の蒸着高さ（Ｙ）及びるつぼのオフセット距離（Ｘ）があまりにも遠くならないように適当に調節でき、その結果、基板全体にわたって均一な薄膜厚さが得られ、かつ、有機物質の使用効率を改善することができる。   Or as shown in FIG. 6, the specific nozzle of the multi-nozzle part 40 is closed using the nozzle plug 60, the direction and quantity of the organic vapor to be ejected are adjusted, and the organic vapor is ejected only from the specific nozzle. By doing so, the deposition height (Y) between the crucible and the substrate and the offset distance (X) of the crucible can be appropriately adjusted so that a uniform thin film thickness is obtained over the entire substrate. And the use efficiency of the organic substance can be improved.

以上述べてきた本発明は、ＯＬＥＤ蒸着工程の蒸発ソースとして用いられるマルチノズルるつぼ装置で、マルチノズルの角度、大きさ及び個数を調節することによって、特に、ＯＬＥＤ薄膜基板の製作時に、ガラス基板に蒸着される薄膜の厚さを均一にすることができ、有機物質の使用効率を向上させ、かつ、蒸着高さ及びオフセット距離があまりにも遠くならないように維持できるという効果が得られる。   The present invention described above is a multi-nozzle crucible device used as an evaporation source in an OLED vapor deposition process. By adjusting the angle, size, and number of multi-nozzles, particularly when manufacturing an OLED thin film substrate, The thickness of the deposited thin film can be made uniform, the use efficiency of the organic material can be improved, and the deposition height and the offset distance can be maintained so as not to be too far.

従来のＯＬＥＤ蒸着工程用のるつぼの一例を示す概略図である。It is the schematic which shows an example of the crucible for the conventional OLED vapor deposition process. 従来のＯＬＥＤ蒸着工程用のるつぼの他の例を示す概略図である。It is the schematic which shows the other example of the crucible for the conventional OLED vapor deposition process. （ａ）は、本発明のＯＬＥＤ蒸着工程用のマルチノズル部の平面構造を示す概略図であり、（ｂ）は、本発明のＯＬＥＤ蒸着工程用のマルチノズル部の正面構造を示す概略図である。(A) is the schematic which shows the planar structure of the multi-nozzle part for the OLED vapor deposition process of this invention, (b) is the schematic which shows the front structure of the multi-nozzle part for the OLED vapor deposition process of this invention is there. 本発明のＯＬＥＤ蒸着工程用の円筒形るつぼの正面構造を示す概略図である。It is the schematic which shows the front structure of the cylindrical crucible for OLED vapor deposition processes of this invention. 本発明のＯＬＥＤ蒸着工程用のマルチノズルるつぼの立体構造を示す概略図である。It is the schematic which shows the three-dimensional structure of the multi-nozzle crucible for the OLED vapor deposition process of this invention. 本発明のＯＬＥＤ蒸着工程用のマルチノズルるつぼのノズル栓を示す概略図である。It is the schematic which shows the nozzle plug of the multi-nozzle crucible for the OLED vapor deposition process of this invention.

Claims (8)

複数個の小さい円筒形のノズル（４１）を有し、下部が開口された円筒形のマルチノズル部（４０）と、上部が開口され、一つの円筒形で形成されて、前記マルチノズル部と結合されるるつぼ５０と、から構成される、ＯＬＥＤ蒸着工程用のマルチノズルるつぼ装置。   A cylindrical multi-nozzle part (40) having a plurality of small cylindrical nozzles (41), the lower part being opened, and the upper part being opened and formed in one cylindrical shape, A multi-nozzle crucible device for an OLED deposition process, comprising a combined crucible 50. 前記円筒形のるつぼ（５０）の内部には、上部中央に向けて円筒形の突出部（５２）が備えられること特徴とする、請求項１に記載のＯＬＥＤ蒸着工程用のマルチノズルるつぼ装置。   The multi-nozzle crucible device for an OLED deposition process according to claim 1, wherein the cylindrical crucible (50) is provided with a cylindrical protrusion (52) toward the upper center. 前記マルチノズル部（４０）には、斜線方向に整列されて内部と通じ、長さ方向に増加する幅を有し、かつ、円筒の周縁部に沿って配置される複数個の円筒形または円錐形ノズル（４１）を備えることを特徴とする、請求項１に記載のＯＬＥＤ蒸着工程用のマルチノズルるつぼ装置。   The multi-nozzle portion (40) has a plurality of cylindrical shapes or cones aligned in the oblique direction and communicating with the inside, having a width increasing in the length direction, and disposed along the peripheral edge of the cylinder. The multi-nozzle crucible device for an OLED deposition process according to claim 1, characterized in that it comprises a shaped nozzle (41). 前記複数個の円筒形または円錐形ノズル（４１）は、それぞれ異なる直径を有し、均一に位置することを特徴とする、請求項３に記載のＯＬＥＤ蒸着工程用のマルチノズルるつぼ装置。   The multi-nozzle crucible device for an OLED deposition process according to claim 3, wherein the plurality of cylindrical or conical nozzles (41) have different diameters and are uniformly positioned. 前記マルチノズル部（４０）の中心軸と前記各円筒形または円錐形ノズルの中心軸間の角度は、０°〜９０°の範囲で形成されることを特徴とする、請求項３に記載のＯＬＥＤ蒸着工程用のマルチノズルるつぼ装置。   The angle between the central axis of the multi-nozzle part (40) and the central axis of each cylindrical or conical nozzle is formed in the range of 0 ° to 90 °. Multi-nozzle crucible device for OLED deposition process. 前記円筒形るつぼ（５０）の底には、るつぼの中央に向けて円筒形の温度測定線固定溝（５１）が備えられることを特徴とする、請求項１に記載のＯＬＥＤ蒸着工程用のマルチノズルるつぼ装置。   The multi-layer for an OLED deposition process according to claim 1, wherein a cylindrical temperature measuring line fixing groove (51) is provided at the bottom of the cylindrical crucible (50) toward the center of the crucible. Nozzle crucible device. 前記マルチノズル部（４０）の特定ノズルは、ノズル栓（６０）によって塞がれることを特徴とする、請求項３に記載のＯＬＥＤ蒸着工程用のマルチノズルるつぼ装置。   The multi-nozzle crucible device for an OLED deposition process according to claim 3, wherein the specific nozzle of the multi-nozzle part (40) is blocked by a nozzle plug (60). 前記マルチノズル部（４０）には、円筒形の周縁部に沿って溝（４２）が均一に形成されることを特徴とする、請求項３に記載のＯＬＥＤ蒸着工程用のマルチノズルるつぼ装置。   The multi-nozzle crucible device for an OLED vapor deposition process according to claim 3, wherein the multi-nozzle part (40) has grooves (42) formed uniformly along a peripheral edge of a cylindrical shape.
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