JP2008501861A - 錫表面の耐食性の向上 - Google Patents
錫表面の耐食性の向上 Download PDFInfo
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- JP2008501861A JP2008501861A JP2007515573A JP2007515573A JP2008501861A JP 2008501861 A JP2008501861 A JP 2008501861A JP 2007515573 A JP2007515573 A JP 2007515573A JP 2007515573 A JP2007515573 A JP 2007515573A JP 2008501861 A JP2008501861 A JP 2008501861A
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- Prior art keywords
- phosphonic acid
- composition
- water
- tin
- volume
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 230000007797 corrosion Effects 0.000 title claims abstract description 23
- 238000005260 corrosion Methods 0.000 title claims abstract description 23
- 239000000203 mixture Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 42
- -1 phosphonic acid compound Chemical class 0.000 claims abstract description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000003960 organic solvent Substances 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 9
- 239000011574 phosphorus Substances 0.000 claims abstract description 9
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 6
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims abstract description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 23
- 150000003009 phosphonic acids Chemical class 0.000 claims description 13
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical group C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 8
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical group [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- NJGCRMAPOWGWMW-UHFFFAOYSA-N octylphosphonic acid Chemical compound CCCCCCCCP(O)(O)=O NJGCRMAPOWGWMW-UHFFFAOYSA-N 0.000 claims description 8
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 claims description 8
- 239000011591 potassium Chemical group 0.000 claims description 8
- 229910052700 potassium Chemical group 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- 239000011265 semifinished product Substances 0.000 claims description 5
- 238000005476 soldering Methods 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 150000001732 carboxylic acid derivatives Chemical group 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- DZQISOJKASMITI-UHFFFAOYSA-N decyl-dioxido-oxo-$l^{5}-phosphane;hydron Chemical compound CCCCCCCCCCP(O)(O)=O DZQISOJKASMITI-UHFFFAOYSA-N 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 10
- 230000001588 bifunctional effect Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 239000013067 intermediate product Substances 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 238000002845 discoloration Methods 0.000 description 7
- 229910001128 Sn alloy Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 150000002430 hydrocarbons Chemical group 0.000 description 5
- 230000032683 aging Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010953 base metal Substances 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 125000004036 acetal group Chemical group 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 125000004423 acyloxy group Chemical group 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 125000004104 aryloxy group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 125000001476 phosphono group Chemical group [H]OP(*)(=O)O[H] 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/167—Phosphorus-containing compounds
- C23F11/1676—Phosphonic acids
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
- C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/73—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals characterised by the process
- C23C22/74—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals characterised by the process for obtaining burned-in conversion coatings
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/82—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
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- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/282—Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
- H05K3/3426—Leaded components characterised by the leads
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
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Abstract
【選択図】図1
Description
本発明は、錫を基材とする表面の腐食を抑制するための方法および組成物、ならびに該表面の腐食の抑制およびはんだ付け性の向上に関するものである。
基材とするコーティングはしば、銅もしくはルを基材とする表面の酸化もしくは変色の防止および/またははんだ付け性の向上のため、電気コネクタ、工学的、機能的および装飾的デバイスの表面などの銅およびニッケルを基材とする半製品(workpiece)の表面に適用される。空気またはその他の酸化性雰囲気において温度が上昇するような条件下では、電子部品パッケージのリードおよび電気コネクタの錫で被膜した表面は、製造と電子デバイスへの組立ての間の出荷および保管の期間中に酸化物の膜を形成する傾向を有する。酸化物のコーティングは、一般的にわずか約500〜2000nm(約50〜200オングストローム(Å))の厚さであるが、錫で被膜した表面の表面を変色させ、多くの消費者が受け入れられないと考える黄色がかった色を呈する。さらに酸化物は、被膜した電気端子の接触抵抗を劣化させる可能性がある。変色のない表面は、酸化物で被膜した表面に比べ、より低い電気接触抵抗およびより良好なはんだづけ性を
従って、本発明の目的の一つは、錫を基材とする表面の耐食性の付与およびはんだ付け性の向上のための方法および組成物を提供することである。
それゆえ、簡単には、本発明は、錫を基材とする表面にホスホン酸化合物および水を含む組成物を接触させ、錫を基材とするコーティング上に燐を基材とする膜を形成し、それにより錫を基材とする表面の腐食を抑制することからなる、半製品の、錫を基材とする表面の耐食性を向上させる方法を指向する。
本発明の他の目的および特徴が開示される。
図1は、封止された電子部品のための本発明により形成されたリードの断面である。
図2は、電子部品パッケージの斜視図である。
図3は、リード・フレームの正面図である。
図4は、電気コネクタの斜視図である。
図5および図6は、実施例において論じた試験片の写真である。
図7は、実施例の試験データのグラフ表示である。
図1〜4は、概略図であり、正確な縮尺で描かれていない。
対応する参照数字はどの図でも対応する部分を示す。
1つの態様において、発明は、半製品の、錫を基材とする表面の耐食性を向上させる方法を対象とする。例示の目的のため、このような1つの半製品は、封止された電子パッケージの電子リードなどの電子部品または電気コネクタであるが、本発明は、工学的、機能的、装飾的またはその他の電子機器のいずれの一部であるかを問わず、錫を基材とする表面に適用することができる。電子機器の錫を基材とする表面に関し、本方法は、錫を基材とする表面の一部のリフローを伴うはんだ付け作業前の保管中、錫を主原料とする表面の耐食性を向上させ、かつはんだ付け性も維持する。
代替的な実施態様において、組成物は、有機を本質的に含まない。この実施態様は、ホスホン酸化合物および水を含む。好都合なことに、有機を除去することにより、取扱い、労働者への危険および流水への廃棄物の処分ならびに費用など該に対する懸念は払拭される。
発明は、はるかに少ない水を含む濃縮液も対象とし、それは使用前に希釈される。
これらの図は概略図であり、種々の個別の層は、正確な縮尺で描かれていない。
本発明の一層の詳細は、以下の実施例で説明される。
A − 1.2重量/容量%のオクチルホスホン酸、22容量%のエタノール
AA − 1.6重量/容量%のオクチルホスホン酸、0.2容量%のエタノール
AAA − 1.6重量/容量%のオクチルホスホン酸、0%のエタノール
11 錫または錫合金コーティング
13 リード
14 電子パッケージ
Claims (33)
- 以下の工程からなる、錫を基材とする半製品表面の耐食性を向上させるための方法:
錫を基材とする表面を、ホスホン酸化合物と水を含む組成物と接触させ、錫を基材とするコーティング上に燐を基材とするフィルムを形成し、それにより錫を基材とする表面の腐食を抑制すること。 - ホスホン酸化合物が、nが5から17の範囲にある 一般式CH3(CH2)nP(O)(OH)2で表される請求項1の方法。
- ホスホン酸化合物がオクチルホスホン酸である請求項1の方法。
- 前記組成物が以下の成分からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;
約30容量%未満の濃度の有機溶媒;および
水。 - 前記組成物が以下の成分からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;
約5容量%未満の濃度の有機溶媒;および
水。 - 前記組成物が以下の成分からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;
約30容量%未満の濃度のアルコール;および
水。 - 前記組成物が以下の成分からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;
約5容量%未満の濃度のアルコール;および
水。 - 前記組成物が以下の成分からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;
約30容量%未満の濃度のエタノール;および
水。 - 前記組成物が以下の成分からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;
約5容量%未満の濃度のエタノール;および
水。 - 前記組成物が有機溶媒を含まず、ホスホン酸化合物および水からなるものである請求項2乃至5のいずれかの方法。
- 前記組成物が実質的にホスホン酸化合物および水からなる請求項2乃至5のいずれかの方法。
- 前記組成物が実質的に以下からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;
約30容量%未満の濃度の有機溶媒;および
水。 - 前記組成物が実質的に以下からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;
約5容量%未満の濃度の有機溶媒;および
水。 - 前記組成物が実質的に以下からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;
約30容量%未満の濃度のアルコール;および
水。 - 前記組成物が実質的に以下からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;
約5容量%未満の濃度のアルコール;および
水。 - 前記組成物が実質的に以下からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;
約30容量%未満の濃度のエタノール;および
水。 - 前記組成物が実質的に以下からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;
約5容量%未満の濃度のエタノール;および
水。 - 前記組成物が有機溶媒を含まず、実質的に以下からなる請求項2乃至5のいずれかの方法:
ホスホン酸化合物;および
水。 - 前記組成物が約0.01から約10%重量/容量の間の濃度のホスホン酸化合物を包含する請求項2乃至20のいずれかの方法。
- 前記ホスホン酸化合物が、デシルホスホン酸、ビニルホスホン酸、およびカルボン酸部分を含むホスホン酸化合物からなる群から選択される請求項1の方法。
- ホスホン酸化合物が二官能性の分子を包含する請求項1の方法。
- 前記半製品が錫を基材とする表面を電子部品であり、そして前記方法が、電子部品の錫を基材とする表面をホスホン酸化合物および水を包含する組成物と接触させて錫を基材とする表面上に燐を基材とするフィルムを形成し、それにより錫を基材とする表面の腐食を抑制することからなる、請求項2乃至23のいずれかの方法。
- 前記半製品が、はんだ付け作業においてはんだ付け可能な表面を提供するための錫を基材とする表面を有する電子部品であり、前記方法が、電子部品の錫を基材とする表面をホスホン酸化合物および水からなる組成物と接触させ、錫を基材とする表面上に燐を基材とするフィルム形成し、それにより錫を基材とする表面の腐食を抑制し、錫を基材とする表面の一部のリフローを伴うはんだ付け作業前の保管の間に電子部品の錫を基材とするコーティングのはんだ付け性を保持することからなる、請求項2乃至23のいずれかの方法。
- ホスホン酸化合物がnが5から17の範囲にある一般式CH3(CH2)nP(O)(OH)2を有する請求項26乃至29のいずれかの組成物。
- ホスホン酸化合物がオクチルホスホン酸である請求項26乃至29のいずれかの組成物。
- ホスホン酸化合物が、デシルホスホン酸、ビニルホスホン酸、およびカルボン酸部分を含むホスホン酸化合物からなる群から選択される請求項26乃至29のいずれかの組成物。
- ホスホン酸化合物が二官能性の分子を含む請求項26乃至29のいずれかの組成物。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/860,678 | 2004-06-03 | ||
US10/860,678 US20050268991A1 (en) | 2004-06-03 | 2004-06-03 | Corrosion resistance enhancement of tin surfaces |
PCT/US2005/019395 WO2005121405A1 (en) | 2004-06-03 | 2005-06-02 | Corrosion resistance enhancement of tin surfaces |
Publications (2)
Publication Number | Publication Date |
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JP2008501861A true JP2008501861A (ja) | 2008-01-24 |
JP5306646B2 JP5306646B2 (ja) | 2013-10-02 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2007515573A Active JP5306646B2 (ja) | 2004-06-03 | 2005-06-02 | 錫表面の耐食性の向上 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20050268991A1 (ja) |
EP (1) | EP1771603B1 (ja) |
JP (1) | JP5306646B2 (ja) |
CN (1) | CN101001980B (ja) |
TW (1) | TWI409362B (ja) |
WO (1) | WO2005121405A1 (ja) |
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EP2376678B1 (en) * | 2009-01-14 | 2012-09-12 | Atotech Deutschland GmbH | Solution and process for increasing the solderability and corrosion resistance of a metal or metal alloy surface |
WO2012147716A1 (ja) * | 2011-04-28 | 2012-11-01 | セントラル硝子株式会社 | 撥水性保護膜形成用薬液及びこれを用いたウェハの洗浄方法 |
CN103668147B (zh) * | 2012-09-26 | 2018-03-23 | 广州天至环保科技有限公司 | 一种能提高锡及其合金镀层综合性能的无铬水性保护剂 |
CN108315789A (zh) * | 2018-03-01 | 2018-07-24 | 深圳市盛元半导体有限公司 | 一种铜基镀锡耐高温保护剂 |
DE102019120051A1 (de) * | 2019-07-24 | 2021-01-28 | Infineon Technologies Ag | Package mit selektivem Korrosionsschutz einer elektrischen Verbindungsstruktur |
CN110753457A (zh) * | 2019-11-05 | 2020-02-04 | 江苏上达电子有限公司 | 一种提高cof化锡后保存寿命的方法 |
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Also Published As
Publication number | Publication date |
---|---|
EP1771603B1 (en) | 2015-05-06 |
CN101001980A (zh) | 2007-07-18 |
US20050268991A1 (en) | 2005-12-08 |
TW200610838A (en) | 2006-04-01 |
CN101001980B (zh) | 2011-06-15 |
JP5306646B2 (ja) | 2013-10-02 |
TWI409362B (zh) | 2013-09-21 |
WO2005121405A1 (en) | 2005-12-22 |
EP1771603A1 (en) | 2007-04-11 |
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