JP2008306040A - ボンディング装置用撮像装置及び撮像方法 - Google Patents
ボンディング装置用撮像装置及び撮像方法 Download PDFInfo
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Abstract
【解決手段】高倍率レンズ34を経て共通の撮像面36に至り、高倍率レンズ34からの距離が異なる位置にある複数の被写体撮像範囲に対応して高倍率レンズ34から共通の撮像面36までの各光路長が異なる第1、第2の高倍率光路51,52を有する高倍率光学系と、2つの高倍率光路51,52の一方を開放し他方を遮断するシャッタ90と、低倍率レンズ35を経て撮像面38に至る低倍率光路53を有し、各高倍率光路51,52よりも広い視野を備える低倍率光学系と、を備え、高倍率光学系の撮像面36の撮像素子31は半導体チップ63の画像を取得し、低倍率光学系の撮像面38を持つ撮像素子33はリードフレーム61の画像を取得する。
【選択図】図3
Description
第2の光学系の視野をリードフレーム面または基板面でスキャンさせ、第2の光学系の撮像面に設けられる撮像素子によって各多段積層半導体チップの全周の各リードを含むリードフレームまたは基板の画像を取得するリード画像撮像工程と、
多段積層半導体チップの各層の高さ位置に応じて光路切り替え手段によって開放されるいずれか1つの第1の光学系の光路を経て第1の光学系の撮像面に結像する多段積層半導体チップの各層の画像を第1の光学系の撮像素子によって取得する半導体チップ撮像工程と、を含むことを特徴とする。
Claims (7)
- 被写体であるリードフレームまたは基板とリードフレームまたは基板に取り付けられた多段積層半導体チップとの画像を取得するボンディング装置用撮像装置であって、
第1のレンズを経て共通の撮像面に至り、第1のレンズからの距離が異なる位置にある複数の被写体撮像範囲に対応して第1のレンズから共通の撮像面までの光路長が異なる複数の光路を有する第1の光学系と、
第1の光学系の複数の光路の内の1つの光路を開放し、他の光路を遮断する光路切り替え手段と、
第1のレンズの被写体側で第1の光学系から分岐し、第1のレンズよりも倍率の低い第2のレンズを経て撮像面に至る光路を有し、第1の光学系の視野よりも広い視野を備える第2の光学系と、
第1の光学系の共通の撮像面に設けられリードフレームまたは基板に取り付けられた多段積層半導体チップの各層の画像を取得する撮像素子と、第2の光学系の撮像面に設けられリードフレームまたは基板の画像を取得する撮像素子と、
を有することを特徴とするボンディング装置用撮像装置。 - 被写体であるリードフレームまたは基板とリードフレームまたは基板に取り付けられた多段積層半導体チップとの画像を取得するボンディング装置用撮像装置であって、
被写体側レンズと第1の撮像面側レンズとを経て共通の撮像面に至り、被写体側レンズからの距離が異なる位置にある複数の被写体撮像範囲に対応して第1の被写体側レンズから共通の撮像面までの光路長が異なる複数の光路を有する第1の光学系と、
第1の光学系の複数の光路の内の1つの光路を開放し、他の光路を遮断する光路切り替え手段と、
被写体側レンズと第1の撮像面側レンズとの間で第1の光学系から分岐し、被写体側レンズと第1の撮像面側レンズとの合成レンズ倍率よりも、被写体側レンズとの合成レンズ倍率が低い第2の撮像面側レンズを経て撮像面に至る光路を有し、第1の光学系の視野よりも広い視野を備える第2の光学系と、
第1の光学系の共通の撮像面に設けられリードフレームまたは基板に取り付けられた多段積層半導体チップの各層の画像を取得する撮像素子と、第2の光学系の撮像面に設けられリードフレームまたは基板の画像を取得する撮像素子と、
を有することを特徴とするボンディング装置用撮像装置。 - 請求項1または2に記載のボンディング装置用撮像装置であって、
光路切り替え手段は、撮像する多段積層半導体チップの各層の高さ位置に応じて複数の光路を切り替えること、
を特徴とするボンディング装置用撮像装置。 - 請求項2に記載のボンディング装置用撮像装置であって、
第1の光学系は、第1の撮像面側レンズと各撮像面との間の光路に、光路に沿った方向に取り付け位置を可変とした光路長調整用手段を有すること
を特徴とするボンディング装置用撮像装置。 - 請求項4に記載のボンディング装置用撮像装置であって、
光路長調整用手段は、光路長調整用レンズまたは透過性のガラス、プラスチック、セラミックスであること、
を特徴とするボンディング装置用撮像装置。 - 第1のレンズを経て共通の撮像面に至り、第1のレンズからの距離が異なる位置にある複数の被写体撮像範囲に対応して第1のレンズから共通の撮像面までの光路長が異なる複数の光路を有する第1の光学系と、第1の光学系の複数の光路の内の1つの光路を開放し、他の光路を遮断する光路切り替え手段と、第1のレンズの撮像面側で第1の光学系から分岐し、第1のレンズよりも倍率の低い第2のレンズを経て撮像面に至る光路を有し、第1の光学系の視野よりも広い視野を備える第2の光学系と、第1の光学系の共通の撮像面に設けられる撮像素子と、第2の光学系の撮像面に設けられる撮像素子と、を備えるボンディング装置用撮像装置によって、被写体であるリードフレームまたは基板とリードフレームまたは基板に取り付けられた各多段積層半導体チップとの画像を取得する撮像方法であって、
第2の光学系の視野をリードフレーム面または基板面でスキャンさせ、第2の光学系の撮像面に設けられる撮像素子によって各多段積層半導体チップの全周の各リードを含むリードフレームまたは基板の画像を取得するリード画像撮像工程と、
多段積層半導体チップの各層の高さ位置に応じて光路切り替え手段によって開放されるいずれか1つの第1の光学系の光路を経て第1の光学系の撮像面に結像する多段積層半導体チップの各層の画像を第1の光学系の撮像素子によって取得する半導体チップ撮像工程と、
を含むことを特徴とする撮像方法。 - 被写体側レンズと第1の撮像面側レンズとを経て共通の撮像面に至り、被写体側レンズからの距離が異なる位置にある複数の被写体撮像範囲に対応して第1の撮像面側レンズから共通の撮像面までの光路長が異なる複数の光路を有する第1の光学系と、第1の光学系の複数の光路の内の1つの光路を開放し、他の光路を遮断する光路切り替え手段と、被写体側レンズと第1の撮像面側レンズとの間で第1の光学系から分岐し、被写体側レンズと第1の撮像面側レンズとの合成レンズ倍率よりも被写体側レンズとの合成レンズ倍率が低い第2の撮像面側レンズを経て撮像面に至る光路を有し、第1の光学系の視野よりも広い視野を備える第2の光学系と、第1の光学系の共通の撮像面に設けられる撮像素子と、第2の光学系の撮像面に設けられる撮像素子と、を備えるボンディング装置用撮像装置によって、被写体であるリードフレームまたは基板とリードフレームまたは基板に取り付けられた各多段積層半導体チップとの画像を取得する撮像方法であって、
第2の光学系の視野をリードフレーム面または基板面でスキャンさせ、第2の光学系の撮像面に設けられる撮像素子によって各多段積層半導体チップの全周の各リードを含むリードフレームまたは基板の画像を取得するリード画像撮像工程と、
多段積層半導体チップの各層の高さ位置に応じて光路切り替え手段によって開放されるいずれか1つの第1の光学系の光路を経て第1の光学系の撮像面に結像する多段積層半導体チップの各層の画像を第1の光学系の撮像素子によって取得する半導体チップ撮像工程と、
を含むことを特徴とする撮像方法。
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TW096139979A TW200848689A (en) | 2007-06-08 | 2007-10-25 | Photography apparatus and method thereof for chip bonding device |
KR1020070128940A KR100955623B1 (ko) | 2007-06-08 | 2007-12-12 | 본딩 장치용 촬상 장치 및 촬상 방법 |
CN2008101089695A CN101320703B (zh) | 2007-06-08 | 2008-06-05 | 焊接装置用摄像装置及摄像方法 |
US12/157,059 US20090059361A1 (en) | 2007-06-08 | 2008-06-06 | Imaging device and method for a bonding apparatus |
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Cited By (4)
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JP2010177511A (ja) * | 2009-01-30 | 2010-08-12 | Shinkawa Ltd | 補正位置検出装置、補正位置検出方法及びボンディング装置 |
CN104363320A (zh) * | 2014-12-03 | 2015-02-18 | 成都凯裕电子电器有限公司 | 一种手机前后置摄像*** |
WO2019082558A1 (ja) * | 2017-10-26 | 2019-05-02 | 株式会社新川 | ボンディング装置 |
JPWO2021246396A1 (ja) * | 2020-06-05 | 2021-12-09 |
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KR101245530B1 (ko) * | 2011-05-26 | 2013-03-21 | 주식회사 탑 엔지니어링 | 광학검사장치 및 이를 구비하는 어레이 테스트 장치 |
JP6128337B2 (ja) * | 2014-10-23 | 2017-05-17 | パナソニックIpマネジメント株式会社 | 半導体装置の製造方法及び製造装置 |
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KR100955623B1 (ko) | 2010-05-03 |
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JP4825172B2 (ja) | 2011-11-30 |
TW200848689A (en) | 2008-12-16 |
US20090059361A1 (en) | 2009-03-05 |
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